JP2002060298A - Method of producing epitaxial multilayer film for soft x-ray mirror - Google Patents
Method of producing epitaxial multilayer film for soft x-ray mirrorInfo
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- JP2002060298A JP2002060298A JP2000245696A JP2000245696A JP2002060298A JP 2002060298 A JP2002060298 A JP 2002060298A JP 2000245696 A JP2000245696 A JP 2000245696A JP 2000245696 A JP2000245696 A JP 2000245696A JP 2002060298 A JP2002060298 A JP 2002060298A
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- titanium
- film
- substrate
- plane
- cobalt
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- Surface Treatment Of Optical Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、２．３ｎｍ〜４．
４ｎｍの軟Ｘ線領域に用いる多層膜ミラーを作製する方
法に関するものであり、多層膜をエピタキシャル成長で
積層させることにより多層膜内の結晶欠陥を減少させ、
軟Ｘ線の反射率を向上させるものである。BACKGROUND OF THE INVENTION The present invention relates to a light emitting device having a wavelength of 2.3 nm to 4.0 nm.
The present invention relates to a method for manufacturing a multilayer mirror used for a soft X-ray region of 4 nm, in which crystal defects in the multilayer film are reduced by stacking the multilayer films by epitaxial growth.
This is to improve the reflectivity of soft X-rays.
【０００２】[0002]
【従来技術】従来、真空蒸着法やスパッタリング成膜法
により軟Ｘ線用の多層膜ミラーの作製が行われている
が、これまでの多層膜は多結晶構造のものがほとんど
で、特に原子層レベルでの平坦性が必要とされる軟Ｘ線
（２．３ｎｍ〜４．４ｎｍ）の多層膜ミラーを作製する
ことは困難であった。2. Description of the Related Art Conventionally, multilayer mirrors for soft X-rays have been manufactured by a vacuum evaporation method or a sputtering film forming method. It has been difficult to fabricate a soft X-ray (2.3 nm to 4.4 nm) multilayer mirror that requires level flatness.
【０００３】[0003]
【発明が解決しようとする課題】本発明の課題は多層膜
をエピタキシャル成長で積層させることにより、多層膜
内の結晶欠陥を減少させ、平坦な多層膜の界面を形成
し、軟Ｘ線の反射率を向上させることにある。An object of the present invention is to reduce crystal defects in a multilayer film by forming a multilayer film by epitaxial growth, to form a flat multilayer film interface, and to obtain a soft X-ray reflectivity. Is to improve.
【０００４】[0004]
【課題を解決するための手段】本発明は、２．３ｎｍ〜
４．４ｎｍの軟Ｘ線領域に用いる多層膜ミラーを作製す
る手段として、超高真空下でチタン、コバルト、銅など
の真空蒸着法により、高反射率が期待されるチタンと
銅、及びチタンとコバルトのエピタキシャル多層膜を耐
熱性、化学的安定性に優れたサファイア単結晶基板上に
結晶方位、基板温度、蒸着速度を制御して作製するもの
である。SUMMARY OF THE INVENTION The present invention relates to a light emitting device having a wavelength of 2.3 nm or less.
As a means for producing a multilayer mirror used in the soft X-ray region of 4.4 nm, titanium and copper, and titanium and copper, which are expected to have high reflectance by ultra-high vacuum under a vacuum vapor deposition method of titanium, cobalt, copper, etc. In this method, an epitaxial multilayer film of cobalt is formed on a sapphire single crystal substrate having excellent heat resistance and chemical stability by controlling the crystal orientation, the substrate temperature, and the deposition rate.
【０００５】[0005]
【発明の実施の形態】超高真空下でチタン、コバルト、
銅などの高純度金属材料を電子ビーム加熱により蒸発さ
せ、温度制御されたサファイア単結晶の基板上にエピタ
キシャル成長させるものである。作製した多層膜はＸ線
回折、ラザフォード後方散乱法を用いて構造評価した。
この作製条件としては、サファイア基板の面方位、成膜
中の基板温度及び成膜速度が重要な項目である。DETAILED DESCRIPTION OF THE INVENTION Under ultra-high vacuum, titanium, cobalt,
A high-purity metal material such as copper is evaporated by electron beam heating, and is epitaxially grown on a sapphire single crystal substrate whose temperature is controlled. The structure of the produced multilayer film was evaluated using X-ray diffraction and Rutherford backscattering method.
As the manufacturing conditions, the plane orientation of the sapphire substrate, the substrate temperature during film formation, and the film formation speed are important items.
【０００６】即ち、本発明の成膜においては、蒸着速度
が０．１ｎｍ／ｓｅｃのとき、（０００１）面のサファ
イア基板上に（０００１）面のチタンをエピタキシャル
成長させる基板温度は、４００℃〜８００℃、好ましく
は５００℃〜７５０℃、最も好ましくは６５０℃〜７０
０℃に制御され、（０００１）面のチタン膜上に（１１
１）面の銅をエピタキシャル成長させる基板温度は、１
００℃〜３００℃、好ましくは１５０℃〜２５０℃、最
も好ましくは２００℃に制御され、（１１１）面の銅膜
上に（０００１）面のチタンをエピタキシャル成長させ
る基板温度は、４００℃〜６００℃、好ましくは４５０
℃〜５５０℃、最も好ましくは５００℃に制御される。That is, in the film formation of the present invention, when the deposition rate is 0.1 nm / sec, the substrate temperature for epitaxially growing (0001) titanium on a (0001) sapphire substrate is 400 ° C. to 800 ° C. ° C, preferably 500 ° C to 750 ° C, most preferably 650 ° C to 70 ° C.
0 ° C., and (11) was placed on the (0001) plane titanium film.
1) The substrate temperature for epitaxially growing copper on the surface is 1
The substrate temperature is controlled at 00 ° C. to 300 ° C., preferably 150 ° C. to 250 ° C., and most preferably 200 ° C., and the substrate temperature for epitaxially growing (0001) titanium on the (111) copper film is 400 ° C. to 600 ° C. , Preferably 450
C. to 550.degree. C., most preferably 500.degree.
【０００７】一方、本発明の他の成膜においては、蒸着
速度が０．１ｎｍ／ｓｅｃのとき、（０００１），（１
１−２０）及び（０１−１２）面のサファイア基板上に
（０００１）面のコバルトをエピタキシャル成長させる
基板温度は、３００℃〜５００℃、好ましくは３５０℃
〜４５０℃、最も好ましくは４００℃に制御され、（０
００１）面のコバルト膜上に（０００１）面のチタンを
エピタキシャル成長させる基板温度は、２５０℃〜４５
０℃、好ましくは３００℃〜４００℃、最も好ましくは
３５０℃に制御され、（０００１）面のチタン膜上に
（０００１）面のコバルトをエピタキシャル成長させる
基板温度は、２５０℃〜４５０℃、好ましくは３００℃
〜４００℃、最も好ましくは３５０℃に制御される。以
下、本発明を実施例に基づいて説明する。On the other hand, in another film formation of the present invention, when the deposition rate is 0.1 nm / sec, (0001), (1)
The substrate temperature at which the (0001) plane cobalt is epitaxially grown on the (1-20) and (01-12) plane sapphire substrates is 300 ° C to 500 ° C, preferably 350 ° C.
~ 450 ° C, most preferably 400 ° C, (0
The substrate temperature for epitaxially growing (0001) titanium on the (001) cobalt film is 250 ° C. to 45 ° C.
The temperature is controlled to 0 ° C., preferably 300 ° C. to 400 ° C., and most preferably 350 ° C., and the substrate temperature for epitaxially growing (0001) cobalt on the (0001) titanium film is 250 ° C. to 450 ° C., preferably 300 ℃
４００400 ° C., most preferably 350 ° C. Hereinafter, the present invention will be described based on examples.
【０００８】[0008]
【実施例１】真空蒸着法により基板温度を２００℃、３
００℃、４００℃、５００℃、６００℃、７００℃、８
００℃に制御して（０００１）面のサファイア単結晶基
板上に約５×１０-8Ｔｏｒｒの真空下で成膜を行った。
基板は鏡面研磨処理をした大きさ８ｍｍ×８ｍｍ、厚さ
０．５ｍｍのものを用いた。蒸着速度０．１ｎｍ／秒で
２５分間の成膜で厚さ約１５０ｎｍのチタン膜を作製し
た。Ｘ線回折によりこれらのチタン膜の結晶構造及び結
晶性をを評価した結果、（０００１）面のサファイア基
板上に（０００１）面のチタンがエピタキシャル成長し
ていることが確認できた。また、基板温度を７００℃に
制御して作製したチタン膜は完全結晶に対して９５％の
結晶性を示した。Embodiment 1 The substrate temperature was set to 200 ° C. and 3 by the vacuum evaporation method.
00 ° C, 400 ° C, 500 ° C, 600 ° C, 700 ° C, 8
The film was formed under a vacuum of about 5 × 10 −8 Torr on a (0001) plane sapphire single crystal substrate while controlling the temperature to 00 ° C.
The substrate used was a mirror-polished substrate having a size of 8 mm × 8 mm and a thickness of 0.5 mm. A titanium film having a thickness of about 150 nm was formed by deposition at a deposition rate of 0.1 nm / sec for 25 minutes. As a result of evaluating the crystal structure and crystallinity of these titanium films by X-ray diffraction, it was confirmed that (0001) titanium was epitaxially grown on the (0001) sapphire substrate. The titanium film formed by controlling the substrate temperature to 700 ° C. showed 95% crystallinity with respect to perfect crystals.
【０００９】基板温度を７００℃に制御して（０００
１）面のサファイア単結晶基板上に厚さ１５０ｎｍのチ
タン膜の蒸着を行い、さらに基板温度を２００℃に制御
し、同様の成膜条件でチタン膜上に厚さ２００ｎｍの銅
膜の蒸着を行った。Ｘ線回折及びラザフォード後方散乱
測定によりこのチタン／銅の二層膜の構造評価を行った
結果、（０００１）面のチタン膜上に（１１１）面の銅
がエピタキシャル成長していることを確認した。The substrate temperature is controlled to 700 ° C. (000
1) A titanium film having a thickness of 150 nm is deposited on a sapphire single crystal substrate having a surface, and the substrate temperature is controlled at 200 ° C., and a copper film having a thickness of 200 nm is deposited on the titanium film under the same film forming conditions. went. The structure of this titanium / copper bilayer film was evaluated by X-ray diffraction and Rutherford backscattering measurement. As a result, it was confirmed that (111) plane copper was epitaxially grown on the (0001) plane titanium film.
【００１０】即ち、図１は（０００１）面のサファイア
単結晶基板上に成膜したＣｕ／Ｔｉ膜のＸ線回折（θ―
２θ）図である。２θの角度が３８．４°，４１．７°
及び４３．４°にあるピークはそれぞれＴｉ（０００
２），α−Ａｌ2Ｏ3（０００６）及びＣｕ（１１１）か
らのピークであり、（０００１）面のサファイア基板上
にＣｕ（１１１）／Ｔｉ（０００１）面がエピタキシャ
ル成長していることが確認できる。つまり膜の成長方向
に対してＣｕ（１１１）／Ｔｉ（０００１）／α−Ａｌ
2Ｏ3（０００１）基板、膜の面内方向に対してＣｕ［１
−２１］／Ｔｉ［０１−１０］／α−Ａｌ2Ｏ3［０１−
１０］基板の結晶方位関係でエピタキシャル成長してい
ることが確認できた。That is, FIG. 1 shows an X-ray diffraction (θ−) of a Cu / Ti film formed on a (0001) plane sapphire single crystal substrate.
FIG. 2θ angles of 38.4 ° and 41.7 °
And the peaks at 43.4 ° are Ti (000
2) Peaks from α-Al 2 O 3 (0006) and Cu (111), confirming that the Cu (111) / Ti (0001) plane is epitaxially grown on the (0001) sapphire substrate. it can. That is, Cu (111) / Ti (0001) / α-Al with respect to the growth direction of the film.
Cu [1] in the in-plane direction of the 2 O 3 (0001) substrate and film.
-21] / Ti [01-10] / α-Al 2 O 3 [01-
10] It was confirmed that epitaxial growth was performed in relation to the crystal orientation of the substrate.
【００１１】次に、基板温度を７００℃に制御して（０
００１）面のサファイア単結晶基板上に厚さ１５０ｎｍ
のチタン膜、次にチタン膜上に基板温度を２００℃に制
御して厚さ２００ｎｍの銅膜の蒸着を行い、さらに基板
温度を５００℃に制御して、銅膜上に厚さ２００ｎｍの
チタン膜の蒸着を行った。構造評価した結果、（１１
１）面の銅膜上に（０００１）面のチタンがエピタキシ
ャル成長していることを確認した。Next, the substrate temperature is controlled to 700 ° C. (0
150 nm thick on a (001) sapphire single crystal substrate
A 200 nm thick copper film is deposited on the titanium film by controlling the substrate temperature to 200 ° C., and the substrate temperature is further controlled to 500 ° C. to form a 200 nm thick titanium film on the titanium film. Film deposition was performed. As a result of the structure evaluation, (11
It was confirmed that (0001) plane titanium was epitaxially grown on the 1) plane copper film.
【００１２】[0012]
【実施例２】実施例１と同様の条件で基板温度を７００
℃に制御して（０００１）面のサファイア単結晶基板上
に厚さ１５０ｎｍのチタン膜の蒸着を行い、さらに基板
温度を３５０℃に制御してチタン膜上に厚さ２００ｎｍ
のコバルト膜の蒸着を行った。実施例１と同様に構造評
価を行った結果、（０００１）面のチタン膜上に（００
０１）面のコバルトがエピタキシャル成長していること
を確認した。Embodiment 2 The substrate temperature was set to 700 under the same conditions as in Embodiment 1.
C., a 150 nm thick titanium film was deposited on the (0001) sapphire single crystal substrate, and the substrate temperature was further controlled at 350 ° C. to form a 200 nm thick titanium film.
Was deposited. As a result of structural evaluation performed in the same manner as in Example 1, (00) was formed on the (0001) plane titanium film.
It was confirmed that cobalt on the (01) plane was epitaxially grown.
【００１３】即ち、図２は（０００１）面のサファイア
単結晶基板上に成膜したＣｏ／Ｔｉ膜のＸ線回折（θ−
２θ）図である。２θの角度が３８．４°、４１．７°
及び４４．６°にあるピークは、それぞれ、Ｔｉ（００
０２）、α−Ａｌ2Ｏ3（０００６）及びＣｏ（０００
２）からのピークであり、（０００１）面のサファイア
基板上にＣｏ（０００１）／Ｔｉ（０００１）面がエピ
タキシャル成長していることが確認できる。That is, FIG. 2 shows an X-ray diffraction (θ−) of a Co / Ti film formed on a (0001) sapphire single crystal substrate.
FIG. 2θ angles of 38.4 ° and 41.7 °
And the peaks at 44.6 ° correspond to Ti (00
02), α-Al 2 O 3 (0006) and Co (000
2), and it can be confirmed that the Co (0001) / Ti (0001) plane is epitaxially grown on the (0001) sapphire substrate.
【００１４】つまり、膜の成長方向に対してＣｏ（００
０１）／Ｔｉ（０００１）／α−Ａｌ2Ｏ3（０００１）
基板、膜の面内方向に対してＣｏ［０１−１０］／Ｔｉ
［０１−１０］／α−Ａｌ2Ｏ3［０１−１０］基板の結
晶方位関係でエピタキシャル成長していることが確認で
きた。In other words, Co (00)
01) / Ti (0001) / α-Al 2 O 3 (0001)
Co [01-10] / Ti with respect to the in-plane direction of the substrate and the film
[01-10] / α-Al 2 O 3 [01-10] It was confirmed that the substrate was epitaxially grown in relation to the crystal orientation of the substrate.
【００１５】[0015]
【実施例３】実施例１と同様の条件で基板温度を３００
℃、４００℃、４５０℃、５００℃、６００℃に制御し
て（０００１）面のサファイア単結晶基板上に厚さ１０
０ｎｍのコバルト膜の蒸着を行った。実施例１と同様に
これらのコバルト膜の結晶構造及び結晶性を評価した結
果、（０００１）面のサファイア基板上に（０００１）
面のコバルトがエピタキシャル成長していることが確認
できた。[Embodiment 3] The substrate temperature was set to 300 under the same conditions as in Embodiment 1.
At 400 ° C., 400 ° C., 450 ° C., 500 ° C., and 600 ° C. to form a layer having a thickness of 10
A 0 nm cobalt film was deposited. As a result of evaluating the crystal structure and crystallinity of these cobalt films in the same manner as in Example 1, the (0001) plane was formed on the (0001) sapphire substrate.
It was confirmed that cobalt on the surface was epitaxially grown.
【００１６】また、基板温度を４００℃に制御して作製
したコバルト膜は完全結晶に対して８５％の結晶性を示
した。基板温度を６００℃に制御して作製したコバルト
膜は、表面が凸凹になり島状成長した膜構造であった。The cobalt film produced by controlling the substrate temperature to 400 ° C. showed 85% crystallinity with respect to the perfect crystal. The cobalt film produced by controlling the substrate temperature to 600 ° C. had a film structure in which the surface became uneven and grew like an island.
【００１７】次に基板温度を３５０℃に制御しコバルト
膜上に厚さ１５０ｎｍのチタン膜の蒸着を行った。実施
例１と同様に構造評価を行った結果、（０００１）面の
コバルト膜上に（０００１）面のチタンがエピタキシャ
ル成長することがわかった。Next, the substrate temperature was controlled at 350 ° C., and a titanium film having a thickness of 150 nm was deposited on the cobalt film. As a result of the structural evaluation performed in the same manner as in Example 1, it was found that (0001) plane titanium was epitaxially grown on the (0001) plane cobalt film.
【００１８】つまり、膜の成長方向に対してＴｉ（００
０１）／Ｃｏ（０００１）／α−Ａｌ2Ｏ3（０００１）
基板、膜の面内方向に対してＴｉ［０１−１０］／Ｃｏ
［０１−１０］／α−Ａｌ2Ｏ3［０１−１０］基板の結
晶方位関係でエピタキシャル成長していることが確認で
きた。That is, Ti (00)
01) / Co (0001) / α-Al 2 O 3 (0001)
Ti [01-10] / Co with respect to the in-plane direction of the substrate and the film
[01-10] / α-Al 2 O 3 [01-10] It was confirmed that the substrate was epitaxially grown in relation to the crystal orientation of the substrate.
【００１９】[0019]
【実施例４】実施例１と同様の条件で基板温度を４００
℃に制御して（０００１）面のサファイア単結晶基板上
に厚さ１００ｎｍのコバルト膜、次にコバルト膜上に基
板温度を３５０℃に制御して厚さ２００ｎｍのチタン膜
の蒸着を行い、さらに基板温度を３５０℃に制御してチ
タン膜上に厚さ１００ｎｍのコバルト膜の蒸着を行っ
た。実施例１と同様に構造評価した結果、膜の成長方向
に対してＣｏ（０００１）／Ｔｉ（０００１）／Ｃｏ
（０００１）／α−Ａｌ2Ｏ3（０００１）基板の結晶方
位関係でエピタキシャル成長していることが確認でき
た。[Embodiment 4] The substrate temperature was set to 400 under the same conditions as in Embodiment 1.
C., a 100 nm-thick cobalt film was deposited on the (0001) sapphire single crystal substrate, and then a 200 nm-thick titanium film was deposited on the cobalt film by controlling the substrate temperature to 350 ° C. The substrate temperature was controlled at 350 ° C., and a 100 nm-thick cobalt film was deposited on the titanium film. As a result of the structure evaluation in the same manner as in Example 1, Co (0001) / Ti (0001) / Co
It was confirmed that epitaxial growth was performed in the (0001) / α-Al 2 O 3 (0001) substrate with respect to the crystal orientation.
【００２０】[0020]
【発明の効果】エピタキシャル成長で積層した多層膜
は、結晶欠陥が減少するために平坦な界面が形成され、
軟Ｘ線の反射率を向上させることができる。According to the present invention, a flat interface is formed in a multilayer film formed by epitaxial growth because crystal defects are reduced.
The reflectivity of soft X-rays can be improved.
【図１】図１は、（０００１）面のサファイア単結晶基
板上に成膜したＣｕ／Ｔｉ膜のＸ線回折（θ−２θ）図
である。２θ：３８．４°，４１．７°及び４３．４°
にあるピークはそれぞれＴｉ（０００２），α−Ａｌ2
Ｏ3（０００６）及びＣｕ（１１１）からのピークであ
り、（０００１）面のサファイア基板上にＣｕ（１１
１）／Ｔｉ（０００１）面がエピタキシャル成長してい
ることが確認できる。FIG. 1 is an X-ray diffraction (θ-2θ) diagram of a Cu / Ti film formed on a (0001) sapphire single crystal substrate. 2θ: 38.4 °, 41.7 ° and 43.4 °
Are Ti (0002) and α-Al 2
These peaks are from O 3 (0006) and Cu (111), and Cu (11) is present on the (0001) plane sapphire substrate.
1) It can be confirmed that the / Ti (0001) plane is epitaxially grown.
【図２】図２は、（０００１）面のサファイア単結晶基
板上に成膜したＣｏ／Ｔｉ膜のＸ線回折（θ−２θ）図
である。２θ：３８．４°，４１．７°及び４４．６°
にあるピークはそれぞれＴｉ（０００２），α−Ａｌ2
Ｏ3（０００６）及びＣｏ（０００２）からのピークで
あり、（０００１）面のサファイア基板上にＣｏ（００
０１）／Ｔｉ（０００１）面がエピタキシャル成長して
いることが確認できる。FIG. 2 is an X-ray diffraction (θ-2θ) diagram of a Co / Ti film formed on a (0001) plane sapphire single crystal substrate. 2θ: 38.4 °, 41.7 ° and 44.6 °
Are Ti (0002) and α-Al 2
The peaks are from O 3 (0006) and Co (0002), and Co (00) on the (0001) plane sapphire substrate.
It can be confirmed that the (01) / Ti (0001) plane is epitaxially grown.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｇ０２Ｂ 5/08 Ｇ２１Ｋ 1/06 Ｄ Ｇ２１Ｋ 1/06 Ｃ Ｇ０２Ｂ 1/10 Ｚ Ｆターム(参考） 2H042 DA01 DA06 DA12 DC02 DC09 DE00 2K009 AA05 BB04 CC14 DD03 DD06 EE00 4G077 AA03 BA01 DA01 EA02 ED05 ED06 EF04 HA01 HA20 SA04 SA07 4K029 AA07 BA06 BA08 BA17 BB02 BB09 BD09 CA01 EA02 EA08──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) G02B 5/08 G21K 1/06 D G21K 1/06 C G02B 1/10 Z F term (Reference) 2H042 DA01 DA06 DA12 DC02 DC09 DE00 2K009 AA05 BB04 CC14 DD03 DD06 EE00 4G077 AA03 BA01 DA01 EA02 ED05 ED06 EF04 HA01 HA20 SA04 SA07 4K029 AA07 BA06 BA08 BA17 BB02 BB09 BD09 CA01 EA02 EA08
Claims (4)
イア（α−Ａｌ2Ｏ3）単結晶基板上にチタン（Ｔｉ）と
銅（Ｃｕ）のエピタキシャル多層膜を作製する方法。1. A method for producing an epitaxial multilayer film of titanium (Ti) and copper (Cu) on a sapphire (α-Al 2 O 3 ) single crystal substrate by a vacuum evaporation method under ultra-high vacuum.
イア（α−Ａｌ2Ｏ3）単結晶基板上にチタン（Ｔｉ）と
コバルト（Ｃｏ）のエピタキシャル多層膜を作製する方
法。2. A method for producing an epitaxial multilayer film of titanium (Ti) and cobalt (Co) on a sapphire (α-Al 2 O 3 ) single crystal substrate by a vacuum evaporation method under ultra-high vacuum.
１５ｎｍ／ｓｅｃのとき、（０００１）面のサファイア
基板上に（０００１）面のチタンをエピタキシャル成長
させる基板温度は、４００℃〜８００℃の範囲に制御さ
れ、（０００１）面のチタン膜上に（１１１）面の銅を
エピタキシャル成長させる基板温度は、１００℃〜３０
０℃の範囲に制御され、（１１１）面の銅膜上に（００
０１）面のチタンをエピタキシャル成長させる基板温度
は、４００℃〜６００℃の範囲に制御される請求項１に
記載の方法。3. The deposition rate is 0.05 nm / sec to 0.1.
At 15 nm / sec, the substrate temperature for epitaxially growing (0001) titanium on a (0001) sapphire substrate is controlled in the range of 400 ° C. to 800 ° C., and (111) is deposited on the (0001) titanium film. The substrate temperature for epitaxially growing copper on the surface is 100 ° C. to 30 ° C.
The temperature is controlled within the range of 0 ° C., and (00) is formed on the (111) plane copper film.
The method according to claim 1, wherein the substrate temperature for epitaxially growing the 01) plane titanium is controlled in a range of 400C to 600C.
１５ｎｍ／ｓｅｃのとき、（０００１）、（１１−２
０）及び（０１−１２）面のサファイア基板上に（００
０１）面のコバルトをエピタキシャル成長させる基板温
度は、３００℃〜５００℃の範囲に制御され、（０００
１）面のコバルト膜上に（０００１）面のチタンをエピ
タキシャル成長させる基板温度は、２５０℃〜４５０℃
の範囲に制御され、（０００１）面のチタン膜上に（０
００１）面のコバルトをエピタキシャル成長させる基板
温度は、２５０℃〜４５０℃の範囲に制御される請求項
２に記載の方法。4. A deposition rate of 0.05 nm / sec to 0.1.
At 15 nm / sec, (0001), (11-2)
(00) and (01-12) on a sapphire substrate.
The substrate temperature for epitaxially growing cobalt on the (01) plane is controlled in the range of 300 ° C to 500 ° C.
The substrate temperature for epitaxially growing (0001) titanium on the (1) cobalt film is 250 ° C. to 450 ° C.
(0) on the (0001) plane titanium film.
The method according to claim 2, wherein the substrate temperature for epitaxially growing the (001) plane cobalt is controlled in a range of 250C to 450C.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104818526A (en) * | 2015-01-27 | 2015-08-05 | 夏洋 | Preparation method for vapor grown two-dimensional material |
| KR20220060951A (en) * | 2020-11-05 | 2022-05-12 | 부산대학교 산학협력단 | Wafer scale Ag thin film using single crystal Cu buffer layer and manufacturing method therof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05319984A (en) * | 1992-05-15 | 1993-12-03 | Nisshin Steel Co Ltd | Production of metallic epitaxial film |
| JPH11116379A (en) * | 1997-10-21 | 1999-04-27 | Japan Atom Energy Res Inst | Production of single crystal multilayer film of ultrathin film niobium and copper |
-
2000
- 2000-08-14 JP JP2000245696A patent/JP4761090B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05319984A (en) * | 1992-05-15 | 1993-12-03 | Nisshin Steel Co Ltd | Production of metallic epitaxial film |
| JPH11116379A (en) * | 1997-10-21 | 1999-04-27 | Japan Atom Energy Res Inst | Production of single crystal multilayer film of ultrathin film niobium and copper |
Non-Patent Citations (1)
| Title |
|---|
| JPN6010070910, Ｃ． Ｍｏｎｔｃａｌｍ ｅｔ ａｌ．, "Ｓｕｒｖｅｙ ｏｆ Ｔｉ−， Ｂ−， ａｎｄ Ｙ−ｂａｓｅｄ ｓｏｆｔ ｘ−ｒａｙ−ｅｘｔｒｅｍｅ ｕｌｔｒａｖｉｏｌｅｔ ｍｕｌｔｉｌａｙｅｒ ｍｉｒｒｏｒｓ ｆｏｒ ｔｈｅ ２− ｔｏ １２−ｎｍ", Ａｐｐｌ． Ｏｐｔ．, 19960901, Ｖｏｌ． ３５， Ｎｏ． ２５, ｐｐ． ５１３４−５１４７, US, Ｏｐｔｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ａｍｅｒｉｃａ * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104818526A (en) * | 2015-01-27 | 2015-08-05 | 夏洋 | Preparation method for vapor grown two-dimensional material |
| KR20220060951A (en) * | 2020-11-05 | 2022-05-12 | 부산대학교 산학협력단 | Wafer scale Ag thin film using single crystal Cu buffer layer and manufacturing method therof |
| KR102456782B1 (en) * | 2020-11-05 | 2022-10-19 | 부산대학교 산학협력단 | Wafer scale Ag thin film using single crystal Cu buffer layer and manufacturing method therof |
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