JP2002048649A5 - - Google Patents

Description

[0005]
[Means for Solving the Problems]
Temperature measuring meter of the present invention, by receiving the infrared radiation emitted from the heat source, a temperature measuring gauge obtain temperature measurement value for the temperature of the heat source, based on the temperature of the heat absorption body for receiving the infrared Infrared detection means having a plurality of thermoelectric banks generating a plurality of voltages , wherein the plurality of thermoelectric banks are formed at predetermined positions different from each other on the main surface of the same semiconductor substrate ; And D. temperature measurement value determination means for determining, as the temperature measurement value, the maximum value among the plurality of temperature measurement value candidates corresponding to the respective output voltages from T.4.

[0007]
Moreover, in the above-mentioned thermometer, it is preferable to further provide the infrared lens which condenses the said infrared ray.

[0009]
Moreover, in the above-mentioned thermometer, it is preferable that the said infrared lens is a binary lens.

[0011]
Further, in the above-described temperature gauge, preferably, the infrared lens has a plurality of binary elements of multi-stage configuration that condenses the infrared light on the heat absorbers of the thermoelectric banks, corresponding to the plurality of thermoelectric banks.

[0013]
In the above-mentioned thermometer, each binary element corresponding to each of the plurality of thermoelectric banks has a line connecting the optical center thereof and the center of the heat absorber of each corresponding thermoelectric bank, the line representing the thermal center of each thermoelectric bank. It is preferable to be configured to coincide with the optical axis of the infrared light to be collected to be collected on the absorber.

[0015]
Further, in the above-mentioned temperature gauge, each binary element corresponding to each of the plurality of thermoelectric elements is such that the optical axis of the infrared light to be collected is separated from the main surface of the semiconductor substrate by a predetermined distance in the normal direction It is preferable to be configured to pass through the same point.

[0017]
Further, in each of the above-described temperature detectors including the infrared lens, it is preferable that the infrared lens is formed by processing a lens substrate made of a semiconductor as a lens.

[0019]
Further, in the above-described temperature gauge, the lens substrate is preferably a silicon substrate.

[0021]
Further, in each of the above-described temperature gauges provided with the infrared lens, it is preferable that the infrared lens be bonded on the main surface of the semiconductor substrate.

[0023]
Further, in each of the above-described temperature gauges provided with the infrared lens , it is preferable that the infrared lens be provided with an infrared coating that narrows the wavelength of infrared light to be received.

[0025]
Further, in each of the above-described thermometers provided with the infrared lens , among the plurality of thermoelectric stacks, a thermoelectric normal based on a heat absorber which passes through the optical center of the infrared lens is the main thermoelectric It is preferable that the secondary thermoelectrics are disposed around the main thermoelectrics, with the other thermoelectrics as secondary thermoelectrics.

[0027]
Further, in each of the above-described temperature gauges, it is preferable that one of the two electrodes of the voltage output of each of the plurality of thermoelectric transducers be connected in common.

[0029]
Further, in each of the above-described temperature gauges, the semiconductor substrate is preferably a silicon substrate.

[0031]
Further, in each of the above-described temperature gauges, the temperature measurement value determining means selects a maximum value among the output voltages from the plurality of thermoelectric banks as the maximum output voltage, and the maximum output voltage selecting means. It is preferable to have temperature measurement value calculation means for calculating the temperature measurement value based on an output voltage.

[0033]
Further, in each of the above-described temperature gauges, the temperature measurement value candidate corresponding to each output voltage from each of the plurality of thermopiles indicates a temperature obtained by adding the difference of the temperature corresponding to each of the output voltages to a reference temperature. Is preferred.

[0035]
Preferably, the above-described temperature gauge further includes reference temperature detection means for detecting the reference temperature.

[0037]
Moreover, in the above-mentioned thermometer, it is preferable that the said reference temperature is the temperature of the cold junction of several said thermoelectric elements.

[0039]
Further, in each of the above-described temperature gauges provided with the reference temperature detection means, it is preferable that the temperature sensing portion of the reference temperature detection means is integrally formed in a semiconductor structure in which the plurality of thermoelectric elements are formed.

[0041]
Further, in each of the above-described temperature detectors including the reference temperature detection means, the reference temperature detection means, as its temperature sensitive portion, includes a plurality of semiconductor elements whose input / output characteristics change according to the temperature change of the reference temperature. Preferably, the reference temperature is detected based on outputs from the plurality of semiconductor elements.

[0043]
Further, in each of the above-described thermometers provided with the reference temperature detection means, it is preferable that the temperature sensing portion of the reference temperature detection means is configured to function as a diode in the semiconductor structure.

[0045]
Further, in each of the above-described temperature gauges, it is preferable that the temperature of the heat source be a tympanic temperature of a human.

Claims (9)

A thermometer which obtains a temperature measurement value of the temperature of the heat source by receiving infrared rays emitted from the heat source,
The plurality of thermoelectric banks that generate a voltage based on the temperature of the heat absorber that receives the infrared rays, the plurality of thermoelectric banks are formed in predetermined positions different from each other on the main surface of the same semiconductor substrate and the infrared detection means was,
Temperature measurement value determination means for determining, as the temperature measurement value, a maximum value among a plurality of temperature measurement value candidates corresponding to each output voltage from each of the plurality of thermoelectric elements;
A thermometer characterized by having. The temperature measurement value determining means
Maximum output voltage selection means for selecting as a maximum output voltage the maximum value among the output voltages from each of the plurality of thermoelectric elements;
Temperature measurement value calculation means for calculating the temperature measurement value based on the maximum output voltage;
The thermometer according to claim 1, characterized in that: It further comprises an infrared lens for collecting the infrared light ,
The infrared lens according to claim 1 or 2 , characterized in that the infrared lens has a plurality of binary elements in a multi-stage configuration that condenses the infrared light on the heat absorbers of the respective thermocouples, corresponding to the plurality of thermoelectric banks. Thermometer. In each binary element corresponding to each of the plurality of thermoelectric banks, a line connecting the optical center and the center of the heat absorber of each corresponding thermoelectric bank is a light collecting target for condensing on the heat absorber of each thermoelectric bank Coincides with the infrared light axis of the
The measurement according to claim 3 , characterized in that the optical axis of the infrared light to be collected passes through the same point separated by a predetermined distance in the normal direction from the main surface of the semiconductor substrate. Thermometer. The temperature sensor according to claim 3 , wherein the infrared lens is provided with an infrared coating that narrows down the wavelength of the received infrared light. Among the plurality of thermoelectric banks, the main electric and electric banks are the thermoelectric bases based on the heat absorbers whose normals centered on the center of the infrared lens pass through the optical center of the infrared lens. The thermometer according to any one of claims 3 to 5 , characterized in that a bank is disposed around the main thermoelectric bank. The temperature sensor according to any one of claims 1 to 6 , wherein one of two poles of the voltage output of each of the plurality of thermoelectric banks is connected in common. Wherein the plurality of temperature measuring values candidates corresponding to each output voltage of the thermoelectric Uzutakakara is characterized by showing a temperature obtained by adding a difference between the temperature corresponding to the respective output voltage to a reference temperature, claims 1 7 The thermometer according to any of the above. The temperature sensor according to any one of claims 1 to 8 , wherein a temperature of the heat source is a tympanic temperature of a human.