JP2002043604A - Photoelectric converter - Google Patents
Photoelectric converterInfo
- Publication number
- JP2002043604A JP2002043604A JP2000227640A JP2000227640A JP2002043604A JP 2002043604 A JP2002043604 A JP 2002043604A JP 2000227640 A JP2000227640 A JP 2000227640A JP 2000227640 A JP2000227640 A JP 2000227640A JP 2002043604 A JP2002043604 A JP 2002043604A
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- JP
- Japan
- Prior art keywords
- electrode
- crystalline semiconductor
- semiconductor particles
- conductivity type
- photoelectric conversion
- Prior art date
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は光電変換装置に関
し、特に多数の結晶質半導体粒子を用いた光電変換装置
に関する。The present invention relates to a photoelectric conversion device, and more particularly, to a photoelectric conversion device using a large number of crystalline semiconductor particles.
【０００２】[0002]
【従来の技術】従来から提案されている結晶質半導体粒
子を用いた光電変換装置を図４及び図５に示す。2. Description of the Related Art FIGS. 4 and 5 show photoelectric conversion devices using crystalline semiconductor particles that have been conventionally proposed.
【０００３】図４に示すように、米国特許第４５１４５
８０号公報によれば、鋼基板８の周囲にアルミニウム膜
７を形成し、粉砕シリコン粒子９をアルミニウム膜７に
接合し、絶縁物質層３、ｎ形シリコン部１０、透明導電
層１１を順次形成した光電変換装置が開示されている。[0003] As shown in FIG.
According to Japanese Patent Publication No. 80, an aluminum film 7 is formed around a steel substrate 8, a ground silicon particle 9 is bonded to the aluminum film 7, and an insulating material layer 3, an n-type silicon part 10, and a transparent conductive layer 11 are sequentially formed. The disclosed photoelectric conversion device is disclosed.
【０００４】特許第２６４１８００号公報には、図５に
示すように、ステンレス基板１２上に低融点の錫層１３
を形成し、この錫層１３上に第１導電形の結晶質半導体
粒子２を配設し、この結晶質半導体粒子２上に第２導電
形の非晶質半導体層１４を前記錫層１３との間に絶縁物
質層３を介して形成する光電変換装置が開示されてい
る。また、前記錫層１３を短冊状に形成し、マスクを用
いて絶縁物質層３を形成することによりセルを直列に接
続する方法が開示されている。Japanese Patent No. 2641800 discloses a low melting point tin layer 13 on a stainless steel substrate 12 as shown in FIG.
Is formed, the first conductive type crystalline semiconductor particles 2 are disposed on the tin layer 13, and the second conductive type amorphous semiconductor layer 14 is formed on the crystalline semiconductor particles 2 with the tin layer 13. There is disclosed a photoelectric conversion device formed with an insulating material layer 3 interposed therebetween. Further, there is disclosed a method in which cells are connected in series by forming the tin layer 13 in a strip shape and forming the insulating material layer 3 using a mask.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、図４に
示す米国特許第４５１４５８０号公報の光電変換装置で
は、バスバーやフィンガー等の電極に関してどのような
パターンでもよいとの記述があるのみであり、好適な補
助電極に関しての具体的な記述はない。However, in the photoelectric conversion device disclosed in U.S. Pat. No. 4,514,580 shown in FIG. 4, there is only a description that any pattern may be used for electrodes such as bus bars and fingers. There is no specific description about the auxiliary electrode.
【０００６】また、図５に示す特許第２６４１８００号
公報の光電変換装置では、補助電極に関して適宜金属の
集電極を形成するとの記述がるのみであり、好適な電極
に関しての具体的な記述はない。Further, in the photoelectric conversion device disclosed in Japanese Patent No. 2641800 shown in FIG. 5, there is only a description that a metal collecting electrode is appropriately formed with respect to the auxiliary electrode, and there is no specific description about a suitable electrode. .
【０００７】上記従来技術に鑑み、本発明の光電変換装
置によれば、結晶質半導体粒子を用いた光電変換装置の
好適な電極を提供することを目的とする。In view of the above prior art, according to the photoelectric conversion device of the present invention, it is an object of the present invention to provide a suitable electrode of the photoelectric conversion device using crystalline semiconductor particles.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、請求項１に係る光電変換装置によれば、一方の電極
となる基板上に、第１導電形の結晶質半導体粒子を多数
配設し、この結晶質半導体粒子間に絶縁物質を介在さ
せ、この結晶質半導体粒子の上部に第２導電形領域を形
成し、この第２導電形領域に他方の電極を接続して設け
た光電変換装置において、前記他方の電極をその下部の
１０％以下の領域においてのみ前記結晶質半導体粒子が
存在するように形成したことを特徴とする。According to a first aspect of the present invention, there is provided a photoelectric conversion device, wherein a large number of crystalline semiconductor particles of the first conductivity type are arranged on a substrate serving as one electrode. An insulating material is interposed between the crystalline semiconductor particles, a second conductivity type region is formed above the crystalline semiconductor particles, and the other electrode is connected to the second conductivity type region. In the conversion device, the other electrode is formed so that the crystalline semiconductor particles are present only in a region of 10% or less below the other electrode.
【０００９】[0009]
【発明の実施の形態】以下、本発明の実施形態を図面に
基づいて詳細に説明する。図１において、１は基板、２
は第１導電形の結晶質半導体粒子、３は絶縁物質、４は
第２導電形の半導体領域、５は保護層、６は他方の電極
である。Embodiments of the present invention will be described below in detail with reference to the drawings. In FIG. 1, 1 is a substrate, 2
Is a crystalline semiconductor particle of the first conductivity type, 3 is an insulating material, 4 is a semiconductor region of the second conductivity type, 5 is a protective layer, and 6 is the other electrode.
【００１０】前記基板１は、一方の電極となるものであ
り、金属、セラミック、樹脂等からなる。セラミックや
樹脂等の絶縁物質を基板として用いる場合はその表面に
アルミニウム等の導電層を形成する必要がある。The substrate 1 serves as one electrode and is made of metal, ceramic, resin, or the like. When an insulating material such as ceramic or resin is used as a substrate, it is necessary to form a conductive layer such as aluminum on the surface.
【００１１】基板１上に結晶質半導体粒子２を多数配設
する。この第１導電形の結晶質半導体粒子２は、Ｓｉ、
Ｇｅ等にｐ形を呈するＢ、Ａｌ、Ｇａ等が微量元素含ま
れているものである。結晶質半導体粒子２の形状として
は多角形を持つもの、曲面を持つもの等がある。粒径分
布としては均一、不均一を問わないが、均一の場合は粒
径を揃える為の工程が必要になるため、コスト的には不
均一の場合が有利である。更に凸曲面を持つことによっ
て光の光線角度の依存性も小さい。A large number of crystalline semiconductor particles 2 are arranged on a substrate 1. The crystalline semiconductor particles 2 of the first conductivity type include Si,
Ge or the like contains a trace element of B, Al, Ga or the like exhibiting a p-type. The crystalline semiconductor particles 2 may have a polygonal shape or a curved shape. The particle size distribution may be uniform or non-uniform, but if uniform, a process for adjusting the particle size is required, so that non-uniformity is advantageous in terms of cost. Further, by having a convex curved surface, the dependence on the light ray angle of light is small.
【００１２】結晶質半導体粒子２の間には、絶縁物質３
を介在させる。この絶縁物質３は、正極負極の分離を行
うための絶縁材料からなる。例えばＳｉＯ2、Ａｌ
2Ｏ3、ＰｂＯ、Ｂ2Ｏ3、ＺｎＯ等を任意な成分とするガ
ラススラリ−を用いた絶縁物質等がある。絶縁物質３は
基板１上に形成したときはある程度の固さ又は粘性が必
要であり、押し込まれた結晶質半導体粒子２を一時的に
保持する必要がある。An insulating material 3 is provided between the crystalline semiconductor particles 2.
Intervene. The insulating material 3 is made of an insulating material for separating the positive electrode and the negative electrode. For example, SiO 2 , Al
There is an insulating material using a glass slurry containing optional components such as 2 O 3 , PbO, B 2 O 3 , and ZnO. When the insulating material 3 is formed on the substrate 1, it needs to have a certain degree of hardness or viscosity, and it is necessary to temporarily hold the pressed crystalline semiconductor particles 2.
【００１３】前記第１導電形の結晶質半導体粒子２の上
部には、第２導電形領域４を形成する。この第２導電形
領域４は、例えば気相成長法等により層状に形成され、
例えばシラン化合物の気相にｎ形を呈するリン系化合物
の気相を微量導入して形成する。なお、この第２導電形
領域４となる層は、単結晶質、多結晶質、微結晶質、非
晶質のいずれでも良い。この場合、層中の微量元素の濃
度は、例えば１×１０ 16〜１０22ａｔｍ／ｃｍ3程度で
ある。また、この第２導電形領域４は、第１導電形の結
晶質半導体粒子２の上部に、イオン注入法や熱拡散法な
どによって、第２導電形を呈する微量元素を注入して形
成し、さらに透明導電膜で全体を被覆するようにしても
よい。On the crystalline semiconductor particles 2 of the first conductivity type
In the portion, the second conductivity type region 4 is formed. This second conductivity type
The region 4 is formed in a layer shape by, for example, a vapor growth method or the like,
For example, a phosphorus-based compound exhibiting n-type in the gas phase of a silane compound
Is formed by introducing a small amount of the gaseous phase. The second conductivity type
The layer to be the region 4 is monocrystalline, polycrystalline, microcrystalline, non-crystalline,
Any of crystalline may be used. In this case, the concentration of trace elements in the layer
The degree is, for example, 1 × 10 16-10twenty twoatm / cmThreeAbout
is there. In addition, the second conductivity type region 4 is connected to the first conductivity type region.
An ion implantation method or a thermal diffusion method is
Injecting a trace element exhibiting the second conductivity type
And then cover the whole with a transparent conductive film
Good.
【００１４】前記第２導電形領域４上に保護膜５が形成
される。この保護膜５は透明誘電体の特性を持つものが
良く、ＣＶＤ法やＰＶＤ法等によって例えば酸化珪素、
酸化セシウム、酸化アルミニウム、窒化珪素、酸化チタ
ン、ＳｉＯ2−ＴｉＯ2、酸化タンタル、酸化イットリウ
ム等を単一組成又は複数組成で単層又は組み合わせて第
２導電形領域４上に形成する。光の入射面に接している
ために保護層５は透明性が必要である。A protective film 5 is formed on the second conductivity type region 4. The protective film 5 preferably has the property of a transparent dielectric, and is made of, for example, silicon oxide,
Cesium oxide, aluminum oxide, silicon nitride, titanium oxide, SiO 2 —TiO 2 , tantalum oxide, yttrium oxide, or the like is formed on the second conductivity type region 4 in a single layer or in a single layer or in combination. Since the protective layer 5 is in contact with the light incident surface, the protective layer 5 needs to have transparency.
【００１５】前記保護膜５の一部を除去して、前記第２
導電形領域４に接続して他方の電極６が形成される。こ
の他方の電極６は、その下方の１０％以下の領域のみに
しか結晶質半導体粒子２が存在しないように、絶縁物質
層３上に形成する。このように、下方の１０％以下の領
域のみに結晶質半導体粒子が存在するように、他方の電
極６を形成すると、変換効率の高い光電変換装置を提供
できる。すなわち、下方の１０％以上の領域に結晶質半
導体粒子が存在すると、光電変換装置の変換効率が低下
する。この他方の電極６は、蒸着法、メッキ法、印刷法
等により形成される。印刷法を用いた場合、銀粉末とガ
ラス粉を有機物バインダと混合した銀ペーストを原料と
し、スクリーン印刷した後、熱処理して電極とする。更
に直列抵抗を下げるために、印刷焼成した電極上に銅や
錫等をメッキしてその上をはんだ被覆しても良い。ま
た、保護膜５を堆積した上に銀ペーストをスクリーン印
刷し、高温（例えば８５０℃）で熱処理して、保護膜５
を通して電極を形成しても良い。By removing a part of the protective film 5, the second
The other electrode 6 is formed so as to be connected to the conductivity type region 4. The other electrode 6 is formed on the insulating material layer 3 so that the crystalline semiconductor particles 2 exist only in a region below 10% of the lower electrode 6. As described above, when the other electrode 6 is formed such that the crystalline semiconductor particles exist only in the lower region of 10% or less, a photoelectric conversion device with high conversion efficiency can be provided. That is, if the crystalline semiconductor particles exist in the lower region of 10% or more, the conversion efficiency of the photoelectric conversion device decreases. The other electrode 6 is formed by a vapor deposition method, a plating method, a printing method, or the like. When a printing method is used, a silver paste in which silver powder and glass powder are mixed with an organic binder is used as a raw material, screen-printed, and then heat-treated to form an electrode. In order to further reduce the series resistance, the printed and baked electrode may be plated with copper, tin, or the like, and may be coated with solder. A silver paste is screen-printed on the protective film 5 and heat-treated at a high temperature (for example, 850 ° C.).
Alternatively, the electrodes may be formed.
【００１６】他方の電極６を結晶質半導体粒子２上に形
成した比較例を図２に示す。他方の電極６を結晶質半導
体粒子２上に形成する場合、第２導電形半導体層４に欠
陥部があるとその個所で第１導電形の結晶質半導体粒子
２と他方の電極６が直接つながり、ショートの原因とな
る等の不具合の原因となる。また、電極形成部の下部に
位置する結晶質半導体粒子２のみの発電特性が低下し、
全体の変換効率に悪影響を及ぼす。他方の電極６を絶縁
物質層３上に形成したときには、第２導電形半導体層４
に欠陥部があったとしても他方の電極６と絶縁物質層３
が直接つながるにとどまりショートには至らず、高い信
頼性を有し、全体の変換効率に悪影響を及ぼすこともな
い。FIG. 2 shows a comparative example in which the other electrode 6 is formed on the crystalline semiconductor particles 2. When the other electrode 6 is formed on the crystalline semiconductor particles 2, if there is a defect in the second conductivity type semiconductor layer 4, the first conductivity type crystalline semiconductor particle 2 and the other electrode 6 are directly connected at that location. , Causing short-circuits and other problems. In addition, the power generation characteristics of only the crystalline semiconductor particles 2 located at the lower part of the electrode forming portion are reduced,
It adversely affects the overall conversion efficiency. When the other electrode 6 is formed on the insulating material layer 3, the second conductive type semiconductor layer 4
The other electrode 6 and the insulating material layer 3
Is directly connected, does not cause a short circuit, has high reliability, and does not adversely affect the overall conversion efficiency.
【００１７】図３に本発明の平面図の一例を示す。他方
の電極６の形成パターンは、図示したパターンに限定さ
れるものではなく、フィンガー、バスバー、リボン電
極、スルーホール等を用いて、直列抵抗が低く、受光損
失を小さくする適切な設計パターンで形成される。FIG. 3 shows an example of a plan view of the present invention. The formation pattern of the other electrode 6 is not limited to the illustrated pattern, and is formed by using a finger, a bus bar, a ribbon electrode, a through hole, or the like, and an appropriate design pattern that has a low series resistance and reduces light reception loss. Is done.
【００１８】[0018]
【実施例】次に、本発明の光電変換装置の実施例を説明
する。まず、基板１上に絶縁物質層３を形成する。基板
１はアルミニウムを用いた。絶縁物質層３はガラスペー
ストを用いてこの基板上に５０μｍの厚みに形成した。
ガラスペーストに用いたガラスは軟化温度４８０℃のも
のを使用した。次に、その上に平均直径８００μｍのｐ
形シリコン粒子２を密に配置した。次に、前記シリコン
粒子２と前記絶縁物質層３の上にｎ形シリコン層４を２
００ｎｍ形成し、更に保護膜５として窒化珪素を５００
ｎｍ形成した。次に、銀ペーストをスクリーン印刷し、
焼成することにより他方の電極６を形成した。他方の電
極６を絶縁物質層３上に形成した面積とシリコン粒子上
に形成した面積を変化させてショートと変換効率を評価
した結果を表１に示す。ショートの評価はサンプルを１
００サンプル作製し、２０％以上ショートが発生したも
のを×、２０％未満５％以上ショートが発生したものを
△、５％未満１％以上ショートが発生したものを○、シ
ョートの発生が１％未満のものを◎とした。Next, an embodiment of the photoelectric conversion device of the present invention will be described. First, an insulating material layer 3 is formed on a substrate 1. The substrate 1 was made of aluminum. The insulating material layer 3 was formed with a thickness of 50 μm on this substrate using a glass paste.
The glass used for the glass paste had a softening temperature of 480 ° C. Next, a p having an average diameter of 800 μm
The shaped silicon particles 2 were densely arranged. Next, an n-type silicon layer 4 is formed on the silicon particles 2 and the insulating material layer 3.
And a protective film 5 of silicon nitride of 500 nm.
nm. Next, screen-print the silver paste,
The other electrode 6 was formed by firing. Table 1 shows the results of evaluating the short circuit and the conversion efficiency by changing the area of the other electrode 6 formed on the insulating material layer 3 and the area formed on the silicon particles. Evaluation of short is 1 sample
00 samples were prepared, and X: those with 20% or more short-circuit occurred, X: less than 20%, 5% or more short-circuit, Δ: Less than 5%, 1% or more short-circuit, 1%: Less than と し た.
【００１９】[0019]
【表１】 [Table 1]
【００２０】上記結果から、シリコン粒子上に形成した
電極部の面積が小さいほど良好な結果を示す。但し、１
０％以下であればシリコン粒子上に電極部を形成しても
影響は小さい。From the above results, the smaller the area of the electrode portion formed on the silicon particles, the better the results. However, 1
If it is 0% or less, the influence is small even if the electrode portion is formed on the silicon particles.
【００２１】[0021]
【発明の効果】以上のように、請求項１に係る光電変換
装置によれば、一方の電極となる基板上に、第１導電形
の結晶質半導体粒子を多数配設し、この結晶質半導体粒
子間に絶縁物質を介在させ、この結晶質半導体粒子の上
部に第２導電形領域を形成し、この第２導電形領域に他
方の電極を接続して設けた光電変換装置において、前記
他方の電極下部の１０％以下の領域においてのみ前記結
晶質半導体粒子が存在するように前記他方の電極を形成
することから、高い信頼性と高い特性を有する光電変換
装置を提供できる。As described above, according to the photoelectric conversion device of the first aspect, a large number of first-conductivity-type crystalline semiconductor particles are provided on a substrate to be one of the electrodes. An insulating material is interposed between the particles, a second conductivity type region is formed above the crystalline semiconductor particles, and the other electrode is connected to the second conductivity type region. Since the other electrode is formed such that the crystalline semiconductor particles are present only in a region of 10% or less below the electrode, a photoelectric conversion device having high reliability and high characteristics can be provided.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明の光電変換装置の実施の形態の一例を示
す断面図である。FIG. 1 is a cross-sectional view illustrating an example of an embodiment of a photoelectric conversion device of the present invention.
【図２】比較例の光電変換装置を示す断面図である。FIG. 2 is a cross-sectional view illustrating a photoelectric conversion device of a comparative example.
【図３】本発明の光電変換装置の実施の形態の一例を示
す平面図である。FIG. 3 is a plan view illustrating an example of an embodiment of a photoelectric conversion device according to the present invention.
【図４】従来例１の光電変換装置の例を示す断面図であ
る。FIG. 4 is a cross-sectional view illustrating an example of a photoelectric conversion device of Conventional Example 1.
【図５】従来例２の光電変換装置の例を示す断面図であ
る。FIG. 5 is a cross-sectional view illustrating an example of a photoelectric conversion device of Conventional Example 2.
１：基板 ２：第１導電形の結晶質半導体粒子 ３：絶縁物質層 ４：第２導電形半導体層 ５：保護層 ６：電極部 1: substrate 2: crystalline semiconductor particles of the first conductivity type 3: insulating material layer 4: semiconductor layer of the second conductivity type 5: protective layer 6: electrode part
───────────────────────────────────────────────────── フロントページの続き (72)発明者 有宗 久雄 滋賀県八日市市蛇溝町長谷野1166番地の６ 京セラ株式会社滋賀工場八日市ブロック 内 Ｆターム(参考） 5F049 MA02 MB02 NA01 NA08 NA20 QA01 QA11 QA20 5F051 AA01 BA11 BA17 DA03 DA20 EA01 FA13 FA16 FA17 FA30 GA02 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hisao Arimune 6F, 1166, Haseno, Jabizo-cho, Yokaichi City, Shiga Prefecture F term in the Yokaichi block of the Shiga Plant of Kyocera Corporation 5F049 MA02 MB02 NA01 NA08 NA20 NA20 QA01 QA11 QA20 5F051 AA01 BA11 BA17 DA03 DA20 EA01 FA13 FA16 FA17 FA30 GA02
Claims (1)
の結晶質半導体粒子を多数配設し、この結晶質半導体粒
子間に絶縁物質を介在させ、この結晶質半導体粒子の上
部に第２導電形領域を形成し、この第２導電形領域に他
方の電極を接続して設けた光電変換装置において、前記
他方の電極をその下部の１０％以下の領域においてのみ
前記結晶質半導体粒子が存在するように形成したことを
特徴とする光電変換装置。A first conductive type crystalline semiconductor particle disposed on a substrate serving as one electrode; an insulating material interposed between the crystalline semiconductor particles; In a photoelectric conversion device in which a second conductivity type region is formed and the other electrode is connected to the second conductivity type region, the crystalline semiconductor particles may be provided only in a region of 10% or less below the other electrode. A photoelectric conversion device, wherein the photoelectric conversion device is formed so as to exist.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000227640A JP2002043604A (en) | 2000-07-27 | 2000-07-27 | Photoelectric converter |
| US09/866,069 US6620996B2 (en) | 2000-05-29 | 2001-05-25 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000227640A JP2002043604A (en) | 2000-07-27 | 2000-07-27 | Photoelectric converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002043604A true JP2002043604A (en) | 2002-02-08 |
Family
ID=18721056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000227640A Withdrawn JP2002043604A (en) | 2000-05-29 | 2000-07-27 | Photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002043604A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004200512A (en) * | 2002-12-19 | 2004-07-15 | Kyocera Corp | Photoelectric converter |
| WO2006080805A1 (en) * | 2005-01-27 | 2006-08-03 | Ls Cable Ltd. | Surface-mounting type thermistor having multi layers and method for manufacturing the same |
-
2000
- 2000-07-27 JP JP2000227640A patent/JP2002043604A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004200512A (en) * | 2002-12-19 | 2004-07-15 | Kyocera Corp | Photoelectric converter |
| WO2006080805A1 (en) * | 2005-01-27 | 2006-08-03 | Ls Cable Ltd. | Surface-mounting type thermistor having multi layers and method for manufacturing the same |
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