JP2002043236A - Semiconductor processing system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To be able to measure the surface temperature of a wafer under constant conditions. SOLUTION: A semiconductor processing system comprises a vacuum vessel 21 having a wafer observation window 28 and gas inlets 26 and 31, a holder 23 arranged on the bottom in the vacuum vessel 21 for supporting a wafer 22 on top of it, and a cooling member 30 arranged in the upper part corresponding to the position directly over the holder 23 of the vacuum vessel 21 and having a hole 30a for gas-purging on the bottom of it. Gas is flown from the gas inlet 31 to an area enclosed by the vacuum vessel 21 and the cooling member 30 to be sent to the wafer side through the hole 30a for gas-purging.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor processing apparatus for preventing fogging caused by film adhesion to a wafer observation window or etching.

[0002]

2. Description of the Related Art Conventionally, a semiconductor processing apparatus as shown in FIG. 2 is known. Reference numeral 1 in the figure indicates a vacuum vessel partitioned into an upper side and a lower side by a current plate 2 made of glass. The current plate 2 has a large number of holes 2a formed in a lattice. In the lower chamber 1a of the vacuum vessel 1, a holder 4 on which an Si wafer 3 is mounted is arranged on the upper part. A heater 5 for heating the wafer 3 is disposed inside the holder 4, and a power source 6 is connected to the heater 5. A gas exhaust port 7 is provided at the bottom of the room 1a.

The upper chamber 1b of the vacuum vessel 1 has:
A wafer observation window 8 is provided at a position just above the holder 4.
Is provided. A gas inlet 9 for introducing a reactive gas is provided on a side wall of the chamber 1b. Above the observation window 8, a radiation thermometer 10 for measuring the surface temperature of the wafer 3 is arranged.

[0004]

In the semiconductor processing apparatus having such a configuration, a reactive gas flows from the gas inlet 9 into the chamber 1b during film formation, and is sent from the hole 2a of the rectifying plate 2 to the wafer 3 in the chamber 1a. To form a film. However, since the wafer 3 and the holder 4 are heated by the heater 5 at the time of film formation, a film of Si or the like easily adheres to the lower surface side of the wafer observation window 8 under the influence of radiant heat from those members. Therefore,
The measurement of the temperature of the wafer 3 by the radiation thermometer 10 cannot be performed under constant conditions, and the measurement accuracy of the wafer temperature decreases.

The present invention has been made in view of the above circumstances, and a cooling member having a gas purging hole at a lower portion is disposed at a position corresponding to a position directly above a holder in an upper portion in a vacuum vessel.
By flowing a gas from the gas inlet to a region surrounded by the vacuum vessel and the cooling member, and sending the gas to the wafer side through the gas purge hole, radiant heat from the wafer and the holder during film formation. It is an object of the present invention to provide a semiconductor processing apparatus capable of reducing film adhesion to a wafer observation window and constantly observing a wafer temperature under a constant condition.

Further, the present invention incorporates an upper lid having a wafer observation window and a gas inlet formed in an upper portion of a vacuum vessel main body, and further incorporates a rectifying plate having a gas vent hole and a cooling member in the upper lid. By flowing gas from the gas introduction port to the region surrounded by the rectifier plate and the upper lid, and sending this gas to the wafer side through the gas vent holes of the rectifier plate, the wafer or holder during film formation It is an object of the present invention to provide a semiconductor processing apparatus capable of reducing the adhesion of a film to a wafer observation window due to radiant heat, and constantly observing a wafer temperature under a constant condition.

[0007]

According to a first aspect of the present invention, there is provided a vacuum vessel in which a wafer observation window and a gas inlet are formed, and a holder for supporting a wafer at an upper portion, which is disposed on the bottom side in the vacuum vessel. And a cooling member having a gas purge hole at a lower portion, which is disposed at a position corresponding to a position directly above the holder in an upper portion of the vacuum container, and in a region surrounded by the vacuum container and the cooling member. A semiconductor processing apparatus is characterized in that a gas flows from the gas inlet and the gas is sent to the wafer side through the gas purge hole.

According to a second aspect of the present invention, there is provided a vacuum vessel main body having an open top, and a vacuum vessel main body disposed on a bottom side in the vacuum vessel main body.
A holder for supporting a wafer at the top, an upper lid provided at the upper part of the vacuum vessel main body, having a wafer observation window and a gas inlet formed therein, and having a gas vent hole and a cooling member incorporated in the upper lid. Gas flow from the gas inlet to a region surrounded by the current plate and the upper lid, and the gas is sent to the wafer side through the gas vents of the current plate. This is a semiconductor processing apparatus characterized by the following.

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in more detail.

In the first invention, the cooling member aims at minimizing the thermal influence on the wafer observation window from the wafer and the holder supporting the wafer, and its shape is not particularly limited. . Further, the material and structure of the cooling member are not particularly limited, but the material is preferably a metal such as SUS, Al, and Cu in order to improve the cooling effect.

In the first aspect of the present invention, the gas sent to the region surrounded by the cooling member and a part of the vacuum vessel is Ar,
At least one of a purge gas such as N ₂ and He or a gas that does not react with the wafer observation window is used.

In the first aspect, the number and shape of the gas purge holes formed in the cooling member are not particularly limited, and may be arbitrarily formed according to the purpose. In the second aspect, the number and shape of the gas vents formed in the current plate are not particularly limited.

In the second aspect of the present invention, the rectifying plate incorporating the cooling member minimizes the thermal influence on the wafer observation window from the wafer and the holder supporting the wafer, and uniformly distributes the reactive gas to the wafer side. The shape is not particularly limited as long as the reactive gas can be uniformly supplied to the wafer side and a cooling effect can be obtained. Here, as the material of the current plate, for example, SUS, Al, Cu coated with Ni that does not adversely affect the wafer or the like is preferable.

In the first and second aspects of the present invention, it is preferable that a mirror finish is applied to at least the surface of the cooling member (or the current plate) facing the wafer in order to reflect radiant heat. Thereby, the influence of the radiant heat from the wafer or the like to the wafer observation window can be reduced.

According to the first aspect of the present invention, at the time of film formation, a purge gas is introduced from the gas introduction port to the wafer side through the gas purge hole through the region surrounded by the cooling member and the vacuum vessel. The radiant heat is reflected by the cooling member, so that the attached matter can be prevented from attaching to the back surface of the observation window. As a result, the wafer temperature surface can always be measured from the wafer observation window under constant conditions.

According to the second aspect of the present invention, by providing a rectifying plate provided with a cooling mechanism on the upper lid which can be opened and closed with respect to the vacuum vessel main body, the inside of the vacuum vessel main body can be cleaned without removing the upper lid. And workability can be improved.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor processing apparatus according to each embodiment of the present invention will be described below with reference to the drawings. Embodiment 1 Referring to FIG. Reference numeral 21 in the figure indicates a vacuum vessel in which a holder 23 for supporting a wafer 22 is disposed on the bottom side. Inside the holder 23, a wafer 22
Is disposed, and a power supply 25 is connected to the heater 24. A first gas inlet 26 for introducing a reactive gas is provided on a side wall of the vacuum vessel 21, and a gas exhaust port 27 is provided on a bottom portion.

On top of the vacuum vessel 21, a wafer 22
Is provided, and a radiation thermometer 29 for measuring the surface temperature of the wafer 22 is disposed above the wafer observation window 28. A metal box-shaped cooling member 30 having a gas purge hole 30a at a lower portion is disposed at a position corresponding to a position directly above the holder 23 in the upper portion of the vacuum vessel 21. Here, the box-shaped cooling member 30 is
It is cooled by a cooling pipe (not shown) through which cooling water passes. A mirror surface treatment is performed on the wafer surface side of the box-shaped cooling member 30. Above the vacuum vessel 21, a box-shaped cooling member 30 and a second gas inlet 31 for introducing a purge gas into a region R surrounded by the vacuum vessel 21 are provided.

According to the semiconductor processing apparatus of the first embodiment,
A box-shaped cooling member 30 having a gas purge hole 30a at a lower portion is disposed at a position corresponding to a position directly above the holder 23 in an upper portion of the vacuum vessel 21. Therefore,
During film formation, for example, a reactive gas is introduced into the vacuum vessel 21 from the first gas inlet 26 while the second gas inlet 3
1 through the region R, the purge gas is introduced from the gas purging hole 30a to the wafer 22 side, so that the wafer 22
The radiant heat from the holder 23 and the cooling member 30 is reflected on the cooling member 30, so that it is possible to suppress the attachment such as Si from attaching to the back surface of the observation window 28. As a result, the wafer temperature surface is constantly monitored by the radiation thermometer 29 under a constant condition.
Can be measured via In addition, the effect of the present invention can be further improved by performing a mirror surface treatment on the wafer surface side of the box-shaped cooling member 30.

(Embodiment 2) Referring to FIG. However, FIG.
And the same members are denoted by the same reference numerals and description thereof is omitted. Reference numeral 41 in the figure denotes a vacuum vessel main body whose upper part is open. The holder 23 described above is arranged at the bottom of the vacuum vessel main body 41. An upper lid 42 is supported by the vacuum vessel main body 41 so as to be openable and closable with respect to the vacuum vessel main body 41 via an opening / closing member 43. A wafer observation window 28 is provided above the upper cover 42, and a gas introduction hole 44 is provided on a side portion of the upper cover 42.

A rectifying plate 47 having a large number of gas vents 45 and incorporating a cooling member 46 is disposed on the vacuum vessel main body side of the upper lid 42. Here, the cooling member 46 includes an annular groove 46 a provided in the rectifying plate 47 located at a peripheral portion of the gas vent 45,
A cooling water 46b flowing through the cooling water 6a and a pump (not shown) for flowing the cooling water are provided.

According to the second embodiment, in addition to having the same effects as in the first embodiment, the upper lid 42 can be opened and closed with respect to the vacuum vessel main body 41, so that the cleaning inside the vacuum vessel main body 41 can be performed without removing the upper lid 42. Can be performed.

In the above embodiment, the description has been given of the prevention of film adhesion to the wafer observation window during film formation. However, the present invention is not limited to this. Of course.

[0024]

As described above in detail, according to the present invention, a cooling member having a gas purging hole in the lower portion is disposed at a position corresponding to a position directly above the holder in the upper portion of the vacuum container, and the vacuum container and the cooling member are provided. By flowing gas from the gas inlet to the region surrounded by the member, and sending the gas to the wafer side through the gas purge hole, the film is radiated from the wafer or the holder during film formation to the wafer observation window. And a semiconductor processing apparatus capable of always measuring the wafer temperature under a constant condition.

Further, according to the present invention, an upper lid having a wafer observation window and a gas inlet formed therein is incorporated in the upper portion of the vacuum vessel main body, and a rectifying plate having a gas vent hole in the upper lid and a cooling member incorporated therein. The gas is introduced from the gas introduction port to the region surrounded by the rectifier plate and the upper lid, and the gas is sent to the wafer side through the gas vent holes of the rectifier plate, so that the It is possible to provide a semiconductor processing apparatus capable of reducing a film from adhering to a wafer observation window due to radiant heat from a holder and constantly measuring a wafer temperature under a constant condition.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of a semiconductor processing apparatus according to a first embodiment of the present invention.

FIG. 2 is an explanatory diagram of a conventional semiconductor processing apparatus.

FIG. 3 is an explanatory diagram of a semiconductor processing apparatus according to a second embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 21 ... Vacuum container, 22 ... Si wafer, 23 ... Holder, 24 ... Heater, 25 ... Power supply, 26, 31, 44 ... Gas introduction port, 27 ... Exhaust port, 28 ... Wafer observation window, 29 ... Radiation thermometer, 30 , 46: cooling member 41: vacuum container body 42: upper lid

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K029 DA03 DA09 4K030 FA10 KA08 KA37 5F004 AA01 AA15 BB18 BB26 BB28 BC08 CB12 5F045 AB03 AC15 AC16 AC17 AF03 DP03 DQ10 EB06 EE13 EF05 EK07 GB05

Claims (4)

[Claims] 1. A vacuum vessel having a wafer observation window and a gas inlet formed therein, and a vacuum vessel disposed on a bottom side in the vacuum vessel.
A holder for supporting a wafer in an upper part, and a cooling member having a gas purge hole in a lower part, which is disposed at a position corresponding to a position directly above the holder in an upper part of the vacuum container, wherein the vacuum container and the cooling device are provided. A semiconductor processing apparatus having a configuration in which a gas is supplied from the gas introduction port to a region surrounded by a member, and the gas is sent to the wafer side through the gas purge hole. 2. The semiconductor processing apparatus according to claim 1, wherein at least a surface of the cooling member facing the wafer is subjected to mirror finishing. 3. A vacuum vessel main body having an open top, a holder arranged on the bottom side of the vacuum vessel main body and supporting a wafer thereon, and a wafer observation window provided on an upper portion of the vacuum vessel main body, An upper lid formed with a gas inlet,
A rectifying plate having a gas ventilation hole and a cooling member incorporated in the upper lid is provided, and a gas is flowed from the gas inlet into a region surrounded by the rectifying plate and the upper lid, A semiconductor processing apparatus having a configuration in which a wafer is sent to a wafer side through a gas vent of a current plate. 4. The semiconductor processing apparatus according to claim 3, wherein at least a surface of the rectifying plate facing the wafer is subjected to mirror finishing.