JP2002033443A - Semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor module which realizes high density three- dimensionally, suppresses the mounting height, and allows connections in the semiconductor module, thereby lessening required outer connecting terminals. SOLUTION: The module comprises a first semiconductor chip, second semiconductor chip having a function surface bonded to the backside of the first chip and a wider backside area than the first chip, substrate having lands two-/ three-dimensionally aligned with and electrically connected to bump electrodes provided on the function surface of the first chip, and bump electrodes provided on those regions of a function surface of the second chip which do not contribute to the bonding to the first chip and outer connecting terminals provided on the opposite surface to the land-forming surface of the substrate for electrically conducting to the lands. The mounting height depends on the thicknesses of the semiconductor chip and the substrate and can be remarkably reduced, compared with the conventional laminate chip.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor module which realizes three-dimensional high density, and more particularly to a semiconductor module which realizes efficient high density and is suitable for high performance.

[0002]

2. Description of the Related Art MCMs (multi chip modules),
Laminated modules and the like are known.

The MCM will be described with reference to FIG.
FIG. 2 is a perspective view showing an example of the appearance of the MCM. MCM
As shown in FIG. 10, devices 92 to 98 are two-dimensionally arranged on a module substrate 91, and the devices 9 to 98 are wired using wire bonding and a wiring pattern on the module substrate.
Necessary connections are made between terminals 2 to 98. Here, the devices 92 to 98 are a semiconductor chip as a bare chip, a passive element, or the like. Since high-density mounting by this method is based on a two-dimensional array of devices, the module area cannot be reduced in principle from the sum of the two-dimensional sizes of those devices.

Next, a laminated module will be described with reference to FIG. This figure is a front view showing an example of the appearance of the laminated module. In such a laminated module, since the semiconductor devices 101 to 104 are mounted three-dimensionally,
The mounting area is reduced. However, stacking the semiconductor devices 101 to 104 in this way often cannot increase the mounting height.

In addition, since a space around the semiconductor device is required to route wiring to the semiconductor device in the upper layer from the external connection terminal 105 on the mounting surface, this space is too large to take advantage of a reduction in mounting area. Therefore, a stacked module of a multi-pin package often does not really make much sense in realization. For this reason, the stacked modules are currently limited to semiconductor devices 101 to 104 that are not multi-pin devices such as memories.

[0006]

As described above, the current high-density mounting semiconductor modules have a limitation that in a two-dimensional array, the module area cannot be made smaller than the sum of the two-dimensional sizes of the devices. In the three-dimensional mounting, there is a matter to be improved that mounting height is increased and mounting in a multi-pin package is not practical.

SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and in a semiconductor module realizing a three-dimensional high density, it is possible to reduce the mounting height and to enable connection within the semiconductor module. Accordingly, it is an object of the present invention to provide a semiconductor module capable of reducing the number of external connection terminals required.

Further, the present invention provides a semiconductor module for realizing a three-dimensionally high density, a semiconductor module for mounting a device further on a surface opposite to a connection surface to a mounting surface thereof and achieving higher density and higher function. The purpose is to provide a module.

Another object of the present invention is to provide a semiconductor module which realizes high density three-dimensionally and which can be easily connected to other semiconductor modules and other devices to achieve higher functionality. .

[0010]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides a first semiconductor chip and a functional surface joined to a back surface of the first semiconductor chip, the back surface of the first semiconductor chip being a back surface of the first semiconductor chip. A second semiconductor chip having a large area, a protruding electrode provided on a functional surface of the first semiconductor chip, and a functional surface of the second semiconductor chip, which do not contribute to bonding to the first semiconductor chip. A land is provided in such a manner that the land is provided in three-dimensional alignment with the protruding electrode provided at the site, and the land is electrically connected to the protruding electrode. And an external connection terminal electrically connected to the land.

Utilizing the difference in size between the first and second semiconductor chips, the two are superimposed and an electrical connection is made from both functional surfaces to the substrate. As a result, the mounting height depends on the thickness of the semiconductor chip and the substrate, and the mounting height can be significantly reduced as compared with the conventional stacked chip.

Further, the first semiconductor chip and the second semiconductor chip
The above-mentioned structure can be realized by using the above-mentioned bonded semiconductor chip as a new first semiconductor chip. That is, the same effect can be obtained when three or more semiconductor chips are stacked.

[0013] The electrical connection between the protruding electrode and the land may be made by a solder material. It can also be done with gold.

Further, a first bonding pad provided on a functional surface of the first semiconductor chip and a functional surface of the second semiconductor chip which do not contribute to bonding with the first semiconductor chip. The semiconductor device may further include a bonding wire for connecting to the provided second bonding pad.

As a result, electrical connection within the semiconductor module becomes possible, so that the number of external connection terminals required can be reduced.

A filling resin may be provided in a space between the first and second semiconductor chips and the substrate. Heat dissipation, moisture proofing, rust proofing, etc. can be improved.

A third bonding pad provided on the back surface of the second semiconductor chip and provided on a functional surface of the second semiconductor chip and not contributing to the bonding with the first semiconductor chip; A second substrate having a conductor electrically connected to the second bonding wire by a second bonding wire; and a second substrate provided on a surface of the second substrate opposite to the second semiconductor chip and electrically connected to the conductor. And two external connection terminals.

Thus, the device can be further mounted on the surface opposite to the connection surface with the mounting surface of the semiconductor module, and high density and high function can be achieved.

A second substrate provided on a back surface of the second semiconductor chip and having a second conductor electrically connected to a first conductor provided on the substrate; A second external connection terminal provided on a surface opposite to the second semiconductor chip and electrically connected to the second conductor may be further provided.

In this case, the device can be further mounted on the surface opposite to the connection surface with the mounting surface of the semiconductor module, and higher density and higher function can be achieved.

Further, the surface of the substrate on which the lands exist is a stepped surface formed by laminating a plurality of wiring boards, and at least one of the plurality of wiring boards is arranged in a plane direction with respect to other wiring boards. The overhanging portion has a third external connection terminal at the overhanging portion.

The third external connection terminal functions as a terminal for connecting the semiconductor modules to each other or to another device, so that a higher function can be achieved.

[0023]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a cross-sectional view illustrating a schematic configuration of a semiconductor module according to one embodiment of the present invention.

FIG. 1A shows three semiconductor chips 11, 13, and 15 to be superposed. The semiconductor chips 11, 13, and 15 increase in chip area in this order, and the functional surface of the semiconductor chip 15 is provided with protruding electrodes 16 for electrical connection between the chip and the outside. Further, a protruding electrode 14 is provided on a functional surface of the semiconductor chip 13 and does not contribute to the overlap with the semiconductor chip 15, and is a functional surface of the semiconductor chip 11 and does not contribute to the overlap with the semiconductor chip 13. A protruding electrode 12 is provided at the site.

For example, the protruding electrodes 16, 14, 12
Eutectic solder (63-37 tin lead ratio), high melting point solder, and gold can be used.

The semiconductor chips 11, 13 and 15 can be combined with chips having different functions, in addition to combining chips having similar functions.

In the case of a combination of chips having different functions,
For example, MPU (micro processing)
unit), CPU (central process)
ngunit) or ASIC (application)
specialized integrated circuit
t) and a DRAM (dyn)
Amic random access memory
y), SRAM (static RAM), SDRAM
(Synchronous DRAM) or the like. Thereby, one system can be constructed.

The semiconductor chips 11, 13, 1 as described above
5 are joined as shown in FIG.

FIG. 1 (c) shows a substrate 17, 1 for electrical connection with the bonded semiconductor chip shown in FIG. 1 (b).
8 and 19 are shown. The substrates 17, 18, 1
Reference numeral 9 denotes a land (not shown in the drawing) which is aligned in a two-dimensional manner with the protruding electrodes 12, 14, 16 of the bonded semiconductor chips 11, 13, 15.
These lands are electrically connected to the external connection terminals 110 of the substrate 17.

The substrates 17, 18, and 19 can be formed by laminating a rigid substrate such as a glass epoxy material or a flexible substrate such as a PI tape (polyimide tape). The electrical connection between the land and the external connection terminal 110 includes, for example, the substrate 1
7, 18, 19 (or substrate 17, 18, or substrate 1)
7), a through-hole is provided, and a conductor is provided on the inner surface of the through-hole.
This can be achieved by guiding the conductor to the surface where 0 is present and connecting it to the external connection terminal 110 by a wiring pattern. That is, in this case, the substrates 17, 18,
Numeral 19 is to form a through hole after being integrated by lamination.

Further, the land and the external connection terminal 1
For electrical connection with the substrate 10, the substrates 17, 18, and 19 may be constituted by a build-up substrate. The use of a build-up substrate makes it easier to design electrical connections between layers within the substrate. Therefore, in the semiconductor module, the semiconductor chip 11,
Electrical connection between 13 and 15 becomes easy.

FIG. 2 is a sectional view of the substrate 17, 1 shown in FIG.
It is a figure which shows the top view of 8, 19 typically. In the figure, the elements already described are given the same numbers,
The substrates 17, 18, and 19 have lands 21, 22, 2,
3 are provided. In this figure, the through holes and the wiring from the lands 21, 22, 23 to the through holes are omitted.

FIG. 3 shows a semiconductor module in which the bonded semiconductor chips 11, 13, 15 shown in FIG. 1B and the corresponding substrates 17, 18, 19 shown in FIG. 1C are connected. It is sectional drawing which shows typically. In FIG.
Elements already described are given the same numbers.

Such semiconductor chips 11, 13, 15
Various flip-chip systems can be adopted for the connection between the substrate and the substrates 17, 18, and 19. For example, gold projecting electrodes are formed on the lands 21, 22, and 23, and the projecting electrodes 12, 14, and 16 of the semiconductor chips 11, 13, and 15 are formed.
Is connected to this land.

As described above, this semiconductor module includes the semiconductor chips 11, 13, 1
By making use of the difference in size of 5, the electrical connection from the functional surface to the substrate is made by overlapping these. As a result, the mounting height depends on the thickness of the semiconductor chip and the substrate, and the mounting height can be significantly reduced as compared with the conventional stacked chip.

Although the case where three semiconductor chips are used has been described here, the semiconductor module according to the present invention can be realized by a similar method in a case where there are two or more semiconductor chips.

FIG. 4 shows the semiconductor module shown in FIG. 3 in which the semiconductor chips 11, 13, 15 and the substrates 17, 1
The filling resin 49 is provided in the gap between the positions 8 and 19, and the elements already described are given the same numbers. With such a filling resin 49, heat dissipation, moistureproofness, rustproofness, and the like can be improved.

Further, the filling resin 49 can cover all the semiconductor chips 11, 13, and 15 by using a transfer mold, for example, in addition to the above-mentioned gap. Note that, for example, an epoxy resin can be used as the filling resin.

Next, an embodiment different from the above-described embodiment will be described with reference to FIG. This figure is a diagram schematically showing another embodiment of the present invention different from the above, and the elements already described are given the same numbers.

FIG. 4A shows substrates 41, 42, and 42 used in place of the substrates 17, 18, 19 described with reference to FIGS.
43 shows a plan view of 43 and 44. FIG. As shown in this figure, in this embodiment, instead of the substrates 17, 18, 19 formed integrally, the substrate 4 divided into blocks
1, 42, 43 and 44 are used. Such separation into blocks can be expected to improve the production yield by the same small-scale parts and to provide flexibility in board design.

FIG. 5B shows the semiconductor chips 11 on the substrates 41, 42, 43, 44 separated from each other.
It is sectional drawing which shows typically the semiconductor module which connected 13 and 15. Also in this embodiment, the mounting height depends on the thickness of the semiconductor chip and the substrate, and the mounting height can be significantly reduced as compared with the conventional laminated chip. In addition, a gap can be provided between the blocks as shown in the figure. In this case, it is not necessary to tighten the connection and attachment specifications between the substrates 41, 42, 43, and 44 and the semiconductor chips 11, 13, and 15. There is an advantage.

Next, an embodiment different from the embodiment described above will be described with reference to FIG. This figure is a cross-sectional view schematically showing a different embodiment of the semiconductor module according to the present invention from the above, and the elements already described are given the same numbers.

In this embodiment, the semiconductor chip 15 and the semiconductor chip 13 are electrically connected by the bonding wires 51. Such an electrical connection is achieved by bonding the semiconductor chip 15 and the semiconductor chip 13 and then connecting the bonding pads (not shown) existing on the functional surfaces of the semiconductor chip 15 and the semiconductor chip 13 by a wire bonding technique. I can do it. Further, the semiconductor chip 13 and the semiconductor chip 11 can be similarly electrically connected by bonding wires as shown in the figure.

By directly connecting the semiconductor chips to each other, the electrical connection in the semiconductor module becomes simpler.
Can be reduced. This is a remarkable effect particularly when a large number of semiconductor chips are stacked. That is, the installation density of the external connection elements 110 is restricted under a certain rule, and the number is limited by the restriction.
This is because there is one limitation in stacking a large number of semiconductor chips.

Next, an embodiment different from the above-described embodiment will be described with reference to FIG. This figure is a cross-sectional view schematically showing a different embodiment of the semiconductor module according to the present invention from the above, and the elements already described are given the same numbers.

In this embodiment, another substrate 61 is provided on the back surface of the semiconductor chip 13 opposite to the substrates 17, 18 and 19 to which the superposed semiconductor chips 13 and 15 are connected. is there. External connection terminals 63 are provided on the surface of the substrate 61 opposite to the semiconductor chip 13. Note that as the substrate 61, a rigid substrate, a flexible substrate, or both can be used.

The external connection terminals 63 are electrically connected to the protruding electrodes 62 provided on the lower surface of the substrate 61 and the bonding pads (not shown). Such electrical conduction between both surfaces of the substrate 61 can be realized, for example, by a conductor provided on the inner surface of the through hole.

The bonding pads are electrically connected to bonding pads provided on the functional surface of the semiconductor chip 13 by bonding wires, for example, after bonding the semiconductor chip 13 and the substrate 61.

The protruding electrodes 62 are used for electrical connection with the substrates 17, 18 and 19.

That is, the substrate 61 and the semiconductor chip 1 are bonded by the bonding pads of the substrate 61 and the projection electrodes 62.
3 and the substrates 17, 18, and 19 can be electrically connected. Only one of the electrical connections may be used as necessary.

According to the structure described above, the device can be further mounted on the surface opposite to the connection surface with the mounting surface of the semiconductor module, and high density and high function can be achieved.

Although FIG. 7 illustrates the case where two semiconductor chips are stacked, the same concept can be realized for a case where three or more semiconductor chips are stacked.

FIG. 8 is a diagram showing a case where the device 71 is connected and mounted on another substrate 61 of the semiconductor module described in FIG. As the device 71, a semiconductor package having a semiconductor chip (for example, CSP (c
In addition to a small package such as a hip scale package), a passive element can be mounted.

In FIG. 8, the elements already described are given the same numbers.

Next, an embodiment different from the above-described embodiment will be described with reference to FIG. This figure is a cross-sectional view schematically showing a different embodiment of the semiconductor module according to the present invention from the above, and the elements already described are given the same numbers.

In this embodiment, a portion corresponding to the substrate 18 in FIG. 1 and FIGS.
It is characterized in that it is replaced by a substrate 81 which projects in the plane direction from 7 and 19. An external connection terminal 82 is provided in the protruding portion. The external connection terminal 82 can be provided on the lower surface of the protruding portion.

The external connection terminal 82 functions as a terminal for connecting to another semiconductor module or device. As a result, higher functionality can be achieved.

In the simplest case, the external connection terminal 82 in this figure is the semiconductor chip 1 in this semiconductor module.
3 and are electrically connected to each other by using the wiring pattern on the upper surface of the substrate 81. In addition to this connection, for example, if a through hole is used, it can be electrically connected to the protruding electrode 16 of another semiconductor chip 15, the external connection terminal 110 provided on the substrate 17, and the protruding electrode 62 of another substrate 61. it can. This can also be achieved by using the substrates 17, 19, 81 as build-up substrates.

The overhang of the substrate 81 is as follows.
It may be provided not only in one direction but also in multiple directions,
Another substrate (for example, substrate 19) may be extended. For example, if the substrate 19 is extended and an external connection terminal is provided on the lower surface of the extended portion, it can be electrically connected to a semiconductor module as shown in FIG.

[0061]

As described in detail above, according to the present invention,
Utilizing the difference in the size of a plurality of semiconductor chips, the two are superimposed on each other, and an electrical connection is made from both functional surfaces to a substrate having lands whose positions coincide with the projecting electrodes on the functional surface two-dimensionally and three-dimensionally. Since the connection is performed, the mounting height depends on the thickness of the semiconductor chip and the substrate, and the mounting height can be significantly reduced as compared with the conventional laminated chip.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a schematic configuration of a semiconductor module according to one embodiment of the present invention.

FIG. 2 is a diagram schematically showing a planar shape of substrates 17, 18, and 19 shown in FIG. 1 (c).

FIG. 3 shows the bonded semiconductor chip 1 shown in FIG.
Sectional drawing which shows typically the semiconductor module which connected 1,13,15 and the board | substrate 17,18,19 corresponding to this shown to FIG.1 (c).

FIG. 4 is a cross-sectional view schematically showing a semiconductor module in which a filling resin 49 is provided in a gap between semiconductor chips 11, 13, and 15 and substrates 17, 18, and 19 in the semiconductor module shown in FIG.

FIG. 5 is a diagram schematically showing another embodiment of the present invention.

FIG. 6 is a cross-sectional view schematically showing a different embodiment of the semiconductor module according to the present invention from the above.

FIG. 7 is a cross-sectional view schematically showing a different embodiment of the semiconductor module according to the present invention from the above.

8 is a diagram showing a case where a device 71 is connected to and mounted on another substrate 61 of the semiconductor module described in FIG. 7;

FIG. 9 is a cross-sectional view schematically showing a different embodiment of the semiconductor module according to the present invention from the above.

FIG. 10 is a perspective view showing an example of the appearance of an MCM.

FIG. 11 is a front view showing an example of the appearance of the laminated module.

[Explanation of symbols]

 11, 13, 15 Semiconductor chip 12, 14, 16 Protruding electrode 17, 18, 19 Substrate 110 External connection terminal 21, 22, 23 Land 41, 42, 43, 44 Substrate 49 Filling resin 51 Bonding wire 61 Substrate 62 Protruding electrode 63 External connection terminal 71 Device 81 Board 82 External connection terminal

Claims (9)

[Claims] A first semiconductor chip, a second semiconductor chip having a function surface joined to a back surface of the first semiconductor chip and having a larger back surface area than the first semiconductor chip; and the first semiconductor chip. The two-dimensionally and three-dimensionally position the protruding electrode provided on the functional surface of the second semiconductor chip and the protruding electrode provided on the functional surface of the second semiconductor chip which does not contribute to the bonding with the first semiconductor chip. A substrate on which a land is provided and the land is electrically connected to the protruding electrode; and an external connection terminal provided on a surface of the substrate opposite to the surface on which the land is provided and electrically connected to the land. And a semiconductor module comprising: 2. The semiconductor module according to claim 1, wherein said joined one of said first semiconductor chip and said second semiconductor chip is a new first semiconductor chip. 3. The semiconductor module according to claim 1, wherein the electrical connection between the projecting electrode and the land is made by a solder material. 4. The electrical connection between the protruding electrode and the land is made of gold.
Or the semiconductor module according to 2. 5. A first bonding pad provided on a functional surface of the first semiconductor chip and a functional surface of the second semiconductor chip which are not contributing to bonding with the first semiconductor chip. The semiconductor module according to any one of claims 1 to 4, further comprising a bonding wire connecting the second bonding pad provided. 6. The semiconductor module according to claim 1, further comprising a resin filling a gap between said first and second semiconductor chips and said substrate. 7. A third bonding pad provided on a back surface of the second semiconductor chip and provided on a functional surface of the second semiconductor chip and not contributing to bonding with the first semiconductor chip. And a second substrate having a conductor electrically connected to the second bonding wire by a second bonding wire; and a second substrate provided on a surface of the second substrate opposite to the second semiconductor chip and electrically connected to the conductor. 7. The semiconductor module according to claim 1, further comprising two external connection terminals. 8. A second substrate provided on a back surface of the second semiconductor chip and having a second conductor electrically connected to a first conductor provided on the substrate; 7. The semiconductor device according to claim 1, further comprising: a second external connection terminal provided on a surface opposite to the second semiconductor chip and electrically connected to the second conductor. The semiconductor module as described in the above. 9. The surface of the substrate on which the lands exist,
A step surface formed by laminating a plurality of wiring boards,
9. The device according to claim 1, wherein at least one of the plurality of wiring boards extends in a planar direction from another wiring board and has a third external connection terminal at the projecting portion. Semiconductor module.