JP2002033292A - Structure of ion beam current measuring apparatus - Google Patents
Structure of ion beam current measuring apparatusInfo
- Publication number
- JP2002033292A JP2002033292A JP2000216977A JP2000216977A JP2002033292A JP 2002033292 A JP2002033292 A JP 2002033292A JP 2000216977 A JP2000216977 A JP 2000216977A JP 2000216977 A JP2000216977 A JP 2000216977A JP 2002033292 A JP2002033292 A JP 2002033292A
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- shape
- current measuring
- flag faraday
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052799 carbon Inorganic materials 0.000 abstract description 9
- 238000005468 ion implantation Methods 0.000 abstract description 7
- 238000011109 contamination Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000007943 implant Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
Landscapes
- Measurement Of Radiation (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、大電流イオン注入
装置におけるイオンビーム電流計測装置（フラグファラ
デー）の構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of an ion beam current measuring device (flag Faraday) in a high current ion implanter.
【０００２】[0002]
【従来の技術】従来、大電流イオン注入装置におけるイ
オンビーム電流計測装置（フラグファラデー）は以下の
ような構成となっていた。2. Description of the Related Art Conventionally, an ion beam current measuring device (flag Faraday) in a large current ion implanting device has the following configuration.
【０００３】図３は従来の大電流イオン注入装置におけ
るフラグファラデーの構成を示す斜視図である。FIG. 3 is a perspective view showing a configuration of a flag Faraday in a conventional large current ion implantation apparatus.
【０００４】この図において、１は固定部、２はその固
定部１に固定されるガイド板、３は駆動軸、４はその駆
動軸３によってガイド板２上を移動することができるフ
ラグファラデーである。In this figure, 1 is a fixed portion, 2 is a guide plate fixed to the fixed portion 1, 3 is a drive shaft, and 4 is a flag Faraday which can move on the guide plate 2 by the drive shaft 3. is there.
【０００５】そこで、図３（ａ）に示すように、イオン
ビームセットアップ状態において、フラグファラデー４
は、イオンビーム５を遮断し内蔵のファラデーカップセ
ンサによりビーム電流の計測を行っている。Therefore, as shown in FIG. 3A, in the ion beam setup state, the flag Faraday 4
Cuts off the ion beam 5 and measures the beam current by a built-in Faraday cup sensor.
【０００６】その後、インプラント処理を開始すると、
フラグファラデー４は、駆動軸３の駆動により、図３
（ｂ）の位置に移動し、分解アパーチャー６のスリット
６ａを通り、イオンビーム５を通過させウエハ（図示な
し）上に到達させる。ここで、フラグファラデー４のイ
オンビーム５と近接する面４Ａは平面形状となってい
る。After that, when the implant process is started,
The flag Faraday 4 is driven by the drive shaft 3 as shown in FIG.
The ion beam 5 is moved to the position (b), passes through the slit 6a of the decomposition aperture 6, passes through the ion beam 5, and reaches a wafer (not shown). Here, the surface 4A of the flag Faraday 4 in proximity to the ion beam 5 has a planar shape.
【０００７】この動作を繰り返すうちに、フラグファラ
デー４のイオンビーム５と近接する面４Ａは、イオンビ
ーム５によりその構成母材（ステンレス）をスパッタさ
れ最悪の場合、不純物としてウエハ上へ注入もしくは付
着する。During the repetition of this operation, the surface 4A of the flag Faraday 4 adjacent to the ion beam 5 is sputtered with its constituent base material (stainless steel) by the ion beam 5, and in the worst case, is implanted or adhered to the wafer as impurities. I do.
【０００８】[0008]
【発明が解決しようとする課題】上記した発塵に対する
抑制方法としては、カーボン板等を用いてイオンビーム
でスパッタされる部分をシールドする方法が一般的であ
った。しかしながら、カーボン板等によるシールド方法
では、基本的なイオンビームによるスパッタ現象を抑制
するものではないため、カーボン板そのものをスパッタ
することによるウエハ上へのカーボン汚染やスパッタが
進行するにつれて下地材料（ステンレス）がむき出しに
なり、ステンレス鋼の主成分であるＦｅ，Ｃｒ，Ｎｉ等
の重金属汚染が発生し、ＬＳＩのトランジスタ特性等に
致命的な欠陥を形成すると共に製品の歩留まりを著しく
低下させてしまう危険性がある。As a method of suppressing the generation of dust, a method of shielding a portion to be sputtered by an ion beam using a carbon plate or the like has been generally used. However, a shielding method using a carbon plate or the like does not suppress a basic ion beam sputtering phenomenon. Therefore, as carbon contamination on a wafer due to sputtering of the carbon plate itself and spattering progress, a base material (stainless steel) is used. ) Is exposed, and heavy metal contamination such as Fe, Cr, and Ni, which are the main components of stainless steel, occurs, causing fatal defects in transistor characteristics and the like of LSI and significantly reducing the yield of products. There is.
【０００９】そこで、本発明は、上記問題点を除去し、
フラグファラデー形状を変更し、スパッタされる部分の
面積を小さくする、またはカバーとして用いるカーボン
板などの形状を変更し、スパッタされる部分の面積を小
さくすることができるイオンビーム電流計測装置の構造
を提供することを目的とする。Therefore, the present invention eliminates the above problems,
By changing the shape of the flag Faraday and reducing the area of the sputtered part, or changing the shape of the carbon plate etc. used as the cover, the structure of the ion beam current measurement device that can reduce the area of the sputtered part The purpose is to provide.
【００１０】[0010]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 〔１〕大電流イオン注入装置におけるイオンビーム電流
計測装置のイオンビームと近接する面の形状をＲ形に構
成し、イオンビームと接触する面積を低減することを特
徴とする。According to the present invention, in order to achieve the above object, (1) the surface of an ion beam current measuring device in a high current ion implanter which is close to an ion beam is formed in an R shape. In addition, the area of contact with the ion beam is reduced.
【００１１】〔２〕大電流イオン注入装置におけるイオ
ンビーム電流計測装置のイオンビームと近接する面をシ
ールドで保護する際に、シールド板形状をＲ形状に構成
し、イオンビームと接触する面積を低減することを特徴
とする。[2] When protecting the surface of the ion beam current measuring device in the high current ion implanter that is close to the ion beam with a shield, the shield plate is formed in an R shape to reduce the area in contact with the ion beam. It is characterized by doing.
【００１２】[0012]
【発明の実施の形態】以下、本発明の実施の形態につい
て詳細に説明する。Embodiments of the present invention will be described below in detail.
【００１３】図１は本発明の第１実施例を示す大電流イ
オン注入装置におけるフラグファラデーの構成を示す斜
視図である。従来例と同じ部分には同じ符号を付してそ
の説明は省略する。FIG. 1 is a perspective view showing a configuration of a flag Faraday in a high current ion implantation apparatus according to a first embodiment of the present invention. The same parts as those in the conventional example are denoted by the same reference numerals, and description thereof will be omitted.
【００１４】まず、図１（ａ）に示すように、イオンビ
ームセットアップ状態において、フラグファラデー４
は、イオンビーム５を遮断し、内蔵のファラデーカップ
センサによりビーム電流の計測を行っている。First, as shown in FIG. 1A, in the ion beam setup state, the flag Faraday 4
Cuts off the ion beam 5 and measures the beam current using a built-in Faraday cup sensor.
【００１５】その後、図１（ｂ）に示すように、インプ
ラント処理を開始すると、フラグファラデー４は、所定
の位置に移動し、分解アパーチャー６のスリット６ａを
通り、イオンビーム５を通過させウエハ上に到達させ
る。Thereafter, as shown in FIG. 1 (b), when the implant process is started, the flag Faraday 4 moves to a predetermined position, passes through the slit 6a of the disassembly aperture 6, passes the ion beam 5, and passes on the wafer. To reach.
【００１６】従来は、この動作を繰り返すうちに、フラ
グファラデー４のイオンビームと近接する面４Ｂは、イ
オンビームにより構成母材（ステンレス）をスパッタさ
れ、最悪の場合、不純物としてウエハ上へ注入もしくは
付着していた。Conventionally, as this operation is repeated, the base material (stainless steel) of the flag Faraday 4 which is adjacent to the ion beam is sputtered with the ion beam on the surface 4B. Had adhered.
【００１７】そこで、この実施例では、このスパッタ現
象を抑制し、ウエハ上への汚染を防止するために、フラ
グファラデー４のイオンビーム５と近接する面４ＢをＲ
面形状とする。Therefore, in this embodiment, in order to suppress this sputtering phenomenon and prevent contamination on the wafer, the surface 4B of the flag Faraday 4 which is in proximity to the ion beam 5 is formed by R
Surface shape.
【００１８】このように、フラグファラデー４の形状を
変更することにより、イオンビーム５と近接する面４Ｂ
が平面からＲをもつ形状となり、イオンビーム５と接触
する面積を格段に低減させることができる。つまり、フ
ラグファラデー４の側面がイオンビームに対して面接触
であったものを線接触させることができ、接触面積の低
減により、スパッタ量を低減することができ、結果とし
て不純物汚染量の抑制が可能となる。As described above, by changing the shape of the flag Faraday 4, the surface 4B close to the ion beam 5 is formed.
Has an R shape from a plane, and the area in contact with the ion beam 5 can be significantly reduced. In other words, the side surface of the flag Faraday 4 can be brought into line contact with the ion beam that has been in surface contact, and the amount of sputtering can be reduced by reducing the contact area, and as a result, the amount of impurity contamination can be suppressed. It becomes possible.
【００１９】次に、本発明の第２実施例について説明す
る。Next, a second embodiment of the present invention will be described.
【００２０】図２は本発明の第２実施例を示す大電流イ
オン注入装置におけるフラグファラデーの構成を示す斜
視図である。従来例と同じ部分には同じ符号を付してそ
の説明は省略する。FIG. 2 is a perspective view showing a configuration of a flag Faraday in a high current ion implantation apparatus according to a second embodiment of the present invention. The same parts as those in the conventional example are denoted by the same reference numerals, and description thereof will be omitted.
【００２１】フラグファラデー４のスパッタされる面を
カーボン板などでシールドする方法を取る場合において
も、イオンビーム５と近接する面が平面形状である以上
スパッタは進行し、シールド材料による汚染また下地母
材がむき出しになるまでスパッタが進行すると母材を構
成する金属汚染が発生する。Even in the case where the sputtered surface of the flag Faraday 4 is shielded with a carbon plate or the like, the sputtering proceeds as long as the surface close to the ion beam 5 has a planar shape, and contamination by the shield material and the underlying base material occur. If the sputtering proceeds until the material is exposed, metal contamination constituting the base material occurs.
【００２２】そこで、そのシールド板の形状においても
フラグファラデー４同様に図２に示すように、Ｒを持た
せた形状にすることにより、スパッタ面積の縮小化を図
る。Therefore, as shown in FIG. 2, the shape of the shield plate is made to have a radius as in the case of the flag Faraday 4, thereby reducing the sputtering area.
【００２３】つまり、Ｒ面４Ｄを有するシールド板４Ｃ
をフラグファラデー４の側面に設けるように構成する。That is, the shield plate 4C having the R surface 4D
Is provided on the side surface of the flag Faraday 4.
【００２４】このように第２実施例によれば、スパッタ
面積の縮小によって、シールド板４Ｃを構成する材料
（カーボン等）による汚染を軽減することができる。As described above, according to the second embodiment, the contamination by the material (carbon or the like) constituting the shield plate 4C can be reduced by reducing the sputtering area.
【００２５】なお、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づいて種々の変形が可能
であり、これらを本発明の範囲から排除するものではな
い。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.
【００２６】[0026]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、次のような効果を奏することができる。 （Ａ）フラグファラデーの側面の形状をＲ面とすること
により、イオンビームと近接する面が平面からＲをもつ
形状となり、ビームと接触する面積を格段に小さくする
ことができる。結果として不純物汚染量の抑制が可能と
なる。 （Ｂ）スパッタ面積の縮小によって、シールド板を構成
する材料（カーボン等）による汚染が軽減される。As described above, according to the present invention, the following effects can be obtained. (A) By making the shape of the side surface of the flag Faraday an R surface, the surface approaching the ion beam becomes a shape having an R from a plane, and the area in contact with the beam can be significantly reduced. As a result, the amount of impurity contamination can be suppressed. (B) The contamination by the material (carbon or the like) constituting the shield plate is reduced by reducing the sputtering area.
【図１】本発明の第１実施例を示す大電流イオン注入装
置におけるフラグファラデーの構成を示す斜視図であ
る。FIG. 1 is a perspective view showing a configuration of a flag Faraday in a high-current ion implantation apparatus according to a first embodiment of the present invention.
【図２】本発明の第２実施例を示す大電流イオン注入装
置におけるフラグファラデーの構成を示す斜視図であ
る。FIG. 2 is a perspective view illustrating a configuration of a flag Faraday in a high current ion implantation apparatus according to a second embodiment of the present invention.
【図３】従来の大電流イオン注入装置におけるフラグフ
ァラデーの構成を示す斜視図である。FIG. 3 is a perspective view showing a configuration of a flag Faraday in a conventional large current ion implantation apparatus.
１ 固定部 ２ ガイド板 ３ 駆動軸 ４ フラグファラデー ４Ｂ イオンビームと近接する面（Ｒ面形状） ４Ｃ シールド板 ４Ｄ Ｒ面 ５ イオンビーム Reference Signs List 1 fixed portion 2 guide plate 3 drive shaft 4 flag Faraday 4B surface close to ion beam (R surface shape) 4C shield plate 4D R surface 5 ion beam
Claims (2)
ーム電流計測装置のイオンビームと近接する面の形状を
Ｒ形に構成し、イオンビームと接触する面積を低減する
ことを特徴とするイオンビーム電流計測装置の構造。1. An ion beam current measuring device in an ion beam current measuring device in a large current ion implanter, wherein the surface of the surface in proximity to the ion beam is formed in an R shape to reduce the area in contact with the ion beam. The structure of the device.
ーム電流計測装置のイオンビームと近接する面をシール
ドで保護する際に、シールド板形状をＲ形状に構成し、
イオンビームと接触する面積を低減することを特徴とす
るイオンビーム電流計測装置の構造。2. The method according to claim 1, wherein the shield plate has an R-shape when protecting a surface of the high-current ion implanter, which is close to the ion beam of the ion beam current measuring device, with a shield.
A structure of an ion beam current measuring device, characterized in that an area in contact with an ion beam is reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000216977A JP4566352B2 (en) | 2000-07-18 | 2000-07-18 | High current ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000216977A JP4566352B2 (en) | 2000-07-18 | 2000-07-18 | High current ion implanter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002033292A true JP2002033292A (en) | 2002-01-31 |
| JP4566352B2 JP4566352B2 (en) | 2010-10-20 |
Family
ID=18712156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000216977A Expired - Fee Related JP4566352B2 (en) | 2000-07-18 | 2000-07-18 | High current ion implanter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4566352B2 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60193250A (en) * | 1984-03-15 | 1985-10-01 | Toshiba Corp | Ion implantation device |
| JPH06203785A (en) * | 1992-12-28 | 1994-07-22 | Nissin Electric Co Ltd | Ion processor |
| JPH0718342U (en) * | 1993-09-02 | 1995-03-31 | 日新電機株式会社 | Ion implanter |
| JPH08213338A (en) * | 1995-01-31 | 1996-08-20 | Sony Corp | Ion implantation and ion implanation device |
| JP2001510929A (en) * | 1997-07-16 | 2001-08-07 | アプライド マテリアルズ インコーポレイテッド | Scan wheel for ion implantation process chamber |
-
2000
- 2000-07-18 JP JP2000216977A patent/JP4566352B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60193250A (en) * | 1984-03-15 | 1985-10-01 | Toshiba Corp | Ion implantation device |
| JPH06203785A (en) * | 1992-12-28 | 1994-07-22 | Nissin Electric Co Ltd | Ion processor |
| JPH0718342U (en) * | 1993-09-02 | 1995-03-31 | 日新電機株式会社 | Ion implanter |
| JPH08213338A (en) * | 1995-01-31 | 1996-08-20 | Sony Corp | Ion implantation and ion implanation device |
| JP2001510929A (en) * | 1997-07-16 | 2001-08-07 | アプライド マテリアルズ インコーポレイテッド | Scan wheel for ion implantation process chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4566352B2 (en) | 2010-10-20 |
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