JP2002030433A5 - - Google Patents
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- JP2002030433A5 JP2002030433A5 JP2000212073A JP2000212073A JP2002030433A5 JP 2002030433 A5 JP2002030433 A5 JP 2002030433A5 JP 2000212073 A JP2000212073 A JP 2000212073A JP 2000212073 A JP2000212073 A JP 2000212073A JP 2002030433 A5 JP2002030433 A5 JP 2002030433A5
- Authority
- JP
- Japan
- Prior art keywords
- target
- magnetic circuit
- substrate
- voltage value
- mask member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (5)
前記内マスク部材の電位を測定する電位計と、
前記磁気回路の位置を検知する位置センサと、
前記電位計と位置センサとに接続して設けられ、前記位置センサより予め決めた範囲内の磁気回路位置を示す出力が行なわれる時のみ前記電位計の出力値を読み取り、読み取った出力電圧値の絶対値を予め決めた基準電圧値と比較し、前記出力電圧値の絶対値が基準電圧値より小さい時にエラー信号を出力する比較器と
を設置したことを特徴とする薄膜形成装置。In the vacuum chamber, the target is arranged so as to face the substrate to be processed is placed, the substrate surface facing the target so as to surround a predetermined region of the substrate is and is placed in contact with the substrate an inner mask member that is insulated from the earth potential, a mask made of an outer mask member which is grounded to the ground potential is coupled through an insulating material on the outer peripheral edge portion of the inner mask member is installed, contradictory to the mask target In a thin film forming apparatus for performing sputtering while reciprocally moving the magnetic circuit from one side of the target to the other side by installing a magnetic circuit in the vicinity of the back of the magnetic circuit,
An electrometer for measuring the potential of the inner mask member;
A position sensor for detecting the position of the magnetic circuit;
An output value of the electrometer is read only when an output indicating a magnetic circuit position within a predetermined range is provided from the position sensor, connected to the electrometer and a position sensor, and the read output voltage value A thin film forming apparatus comprising: a comparator that compares an absolute value with a predetermined reference voltage value and outputs an error signal when the absolute value of the output voltage value is smaller than the reference voltage value.
前記内マスク部材の電位を測定する電位計と、
前記ターゲットに電圧を印加する電源について予め決めた放電パラメータを測定する測定手段と、
前記電位計と測定手段とに接続して設けられ、前記測定手段からの出力値が予め決めた範囲内にある時のみ前記電位計の出力値を読み取り、読み取った出力電圧値の絶対値を予め決めた基準電圧値と比較し、前記出力電圧値の絶対値が基準電圧値より小さい時にエラー信号を出力する比較器と
を設置したことを特徴とする薄膜形成装置。In the vacuum chamber, the target is arranged so as to face the substrate to be processed is placed, the substrate surface facing the target so as to surround a predetermined region of the substrate is and is placed in contact with the substrate an inner mask member that is insulated from the earth potential, a mask made of an outer mask member which is grounded to the ground potential is coupled through an insulating material on the outer peripheral edge portion of the inner mask member is installed, contradictory to the mask target In a thin film forming apparatus for performing sputtering while reciprocally moving the magnetic circuit from one side of the target to the other side by installing a magnetic circuit in the vicinity of the back of the magnetic circuit,
An electrometer for measuring the potential of the inner mask member;
Measuring means for measuring a predetermined discharge parameter for a power supply for applying a voltage to the target;
The electrometer is connected to the measuring means, and the output value of the electrometer is read only when the output value from the measuring means is within a predetermined range, and the absolute value of the read output voltage value is previously set. A thin film forming apparatus, comprising: a comparator that compares with a determined reference voltage value and outputs an error signal when the absolute value of the output voltage value is smaller than the reference voltage value.
前記内マスク部材の電位を測定するとともに、前記磁気回路の位置を位置センサによりあるいは予め決めた放電パラメータをモニターすることにより検出し、前記磁気回路の位置が予め決めた範囲内にある時に前記電位計の出力値を読み取り、読み取った出力電圧値の絶対値を予め決めた基準電圧値と比較し、前記出力電圧値の絶対値が基準電圧値より小さい時に薄膜形成を停止することを特徴とする薄膜形成方法。In the vacuum chamber, the target is arranged so as to face the substrate to be processed is placed, the substrate surface facing the target so as to surround a predetermined region of the substrate is and is placed in contact with the substrate an inner mask member that is insulated from the earth potential, a mask made of an outer mask member which is grounded to the ground potential is coupled through an insulating material on the outer peripheral edge portion of the inner mask member is installed, contradictory to the mask target When the magnetic circuit is movably installed in the vicinity of the back surface of the substrate, sputtering is performed while reciprocating the magnetic circuit from one side of the target to the other side, and when forming a thin film on the target-facing surface of the substrate,
The potential of the inner mask member is measured, the position of the magnetic circuit is detected by a position sensor or by monitoring a predetermined discharge parameter, and the potential is detected when the position of the magnetic circuit is within a predetermined range. The output value of the meter is read, the absolute value of the read output voltage value is compared with a predetermined reference voltage value, and thin film formation is stopped when the absolute value of the output voltage value is smaller than the reference voltage value. Thin film forming method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000212073A JP4082852B2 (en) | 2000-07-13 | 2000-07-13 | Thin film forming equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000212073A JP4082852B2 (en) | 2000-07-13 | 2000-07-13 | Thin film forming equipment |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002030433A JP2002030433A (en) | 2002-01-31 |
JP2002030433A5 true JP2002030433A5 (en) | 2005-08-04 |
JP4082852B2 JP4082852B2 (en) | 2008-04-30 |
Family
ID=18708039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000212073A Expired - Fee Related JP4082852B2 (en) | 2000-07-13 | 2000-07-13 | Thin film forming equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4082852B2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5393972B2 (en) * | 2007-11-05 | 2014-01-22 | Hoya株式会社 | Mask blank and transfer mask manufacturing method |
KR100932934B1 (en) * | 2007-12-13 | 2009-12-21 | 삼성모바일디스플레이주식회사 | Manufacturing method of flat panel display using sputtering apparatus and sputtering apparatus |
JP5302916B2 (en) * | 2010-03-05 | 2013-10-02 | キヤノンアネルバ株式会社 | Substrate processing equipment |
JP5849334B2 (en) * | 2012-02-14 | 2016-01-27 | 株式会社Joled | Sputtering apparatus maintenance time determination method, maintenance method, sputtering apparatus |
TWI438297B (en) * | 2012-06-06 | 2014-05-21 | Au Optronics Corp | Sputtering device and control method of magnet thereof |
CN105803410B (en) * | 2016-04-29 | 2018-07-17 | 京东方科技集团股份有限公司 | The method of magnetic control sputtering device, magnetron sputtering apparatus and magnetron sputtering |
-
2000
- 2000-07-13 JP JP2000212073A patent/JP4082852B2/en not_active Expired - Fee Related
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