JP5849334B2 - Sputtering apparatus maintenance time determination method, maintenance method, sputtering apparatus - Google Patents

Description

  The present invention relates to a method for determining a maintenance time of a sputtering apparatus and the like.

  Among sputtering apparatuses, one having a high film forming speed is a sputtering apparatus equipped with a magnetron. In this sputtering apparatus, a substrate and a target member are disposed facing each other in a vacuum chamber, and a magnetron is disposed on the opposite side of the target member from the substrate. By arranging the magnetron at this position, the plasma generated in the gap between the substrate and the target member can be concentrated in the vicinity of the target member, and as a result, the film formation rate can be increased. Further, the magnetron is moved evenly along the target member, thereby preventing local consumption of the target member. The sputtering apparatus further includes a mask holding member between the substrate and the target member. The mask holding member has an opening in the area of the gap between the substrate and the target member. The mask is arranged in the opening of the mask holding part (Patent Documents 1 and 2).

  By the way, the target material jumping out of the target member is deposited not only on the substrate but also on various members in the vacuum chamber. The amount of deposition on various members increases as the cumulative operating time of the sputtering apparatus becomes longer. When the amount of deposition on various members increases in this way, the electrical conditions in the vacuum chamber change, so that the plasma distribution and the like are affected, and there is a possibility that a thin film having desired characteristics cannot be obtained. Therefore, conventionally, maintenance such as cleaning and replacement of various members in the vacuum chamber is regularly performed.

JP 2002-30433 A Japanese Patent Laid-Open No. 7-310181

However, the deposition conditions of the sputtering apparatus are often finely adjusted every day, and the deposition rate of the target material is not always constant. Therefore, if maintenance is performed regularly, it may be too early or too late than when maintenance is necessary.
An object of this invention is to provide the technique which can perform a maintenance at a suitable time in view of the said subject.

  A maintenance time determination method according to an aspect of the present invention includes a substrate holding member that holds a substrate, a target holding member that holds the target member so that the target member containing a conductive material and the substrate face each other, The insulating member is provided between the substrate and the target member, and has an opening in a gap region between the substrate and the target member, and holds a mask disposed in the opening. A mask holding member, a power source for applying a voltage between the substrate and the target member, and the mask holding member as viewed from a direction perpendicular to the target member, disposed on the opposite side of the target member from the substrate. A magnetron that moves to both a first region that overlaps the opening of the member and a second region that does not overlap the opening of the mask holding member. In the method for determining the maintenance time of the apparatus, when the magnetron is in the second region, a physical quantity indicating a voltage applied between the substrate and the target member is measured, and based on the measured value of the physical quantity To determine whether maintenance of the sputtering apparatus is necessary.

  According to the above configuration, the specific physical quantity is actually measured, and the maintenance time is determined based on the measured value. Therefore, even when the deposition rate of the target material is not constant, the maintenance can be performed at a suitable time.

The figure which shows the structure of the sputtering device which comprised the magnetron It is a measurement result of the voltage applied between a board | substrate and a target member, (a) is a measurement result just before a maintenance, (b) is a measurement result just after a maintenance. Diagram showing average, minimum and maximum values of voltage applied between substrate and target member A diagram schematically showing the state of a sputtering apparatus immediately before and after maintenance. The figure which shows the structure of the sputtering device which concerns on the 1st Embodiment of this invention. The figure which shows the relationship between the position and time of a magnetron, and the relationship between the voltage applied between a board | substrate and a target member, and time Flowchart of maintenance time determination processing according to the first embodiment of the present invention. The flowchart of the reference value determination process which concerns on the 1st Embodiment of this invention. The figure which shows the structure of the sputtering device which concerns on the 2nd Embodiment of this invention. The figure which shows the relationship between the position and time of a magnetron, and the relationship between the voltage applied between a board | substrate and a target member, and time Flowchart of maintenance time determination processing according to the second embodiment of the present invention. The flowchart of the reference value determination process which concerns on the 2nd Embodiment of this invention. The figure which shows the structure of the sputtering device which concerns on the 3rd Embodiment of this invention. The figure which shows the relationship between the position and time of a magnetron, and the relationship between the voltage applied between a board | substrate and a target member, and time The figure which shows the relationship between the position and time of a magnetron, and the relationship between the voltage applied between a board | substrate and a target member, and time The figure for demonstrating the modification of the physical quantity to be measured

[Background to One Embodiment of the Present Invention]
First, a process in which the inventor has reached one embodiment of the present invention will be described.
FIG. 1A shows the structure of a sputtering apparatus equipped with a magnetron.
The sputtering apparatus includes a vacuum chamber 11, a substrate holding member 12, a target holding member 14, a mask holding member 16, a power supply unit 18, a voltage detection unit 21, and a magnetron 23.

The vacuum chamber 11 is made of a metal material such as stainless steel. The vacuum chamber is electrically grounded via the wiring 22.
The substrate holding member 12 is also called a susceptor and has a function of holding the substrate 13.
The target holding member 14 is also called a backing plate and has a function of holding the target member 15. The substrate 13 and the target member 15 are arranged to face each other.

The mask holding member 16 is made of an insulating material and is provided between the substrate 13 and the target member 15. The mask holding member 16 has an opening 16 a in a gap region between the substrate 13 and the target member 15. The mask 17 is disposed in the opening 16 a of the mask holding member 16.
The power supply unit 18 is electrically connected to the substrate holding member 12 via the wiring 19 and electrically connected to the target member 15 via the wiring 20. Thereby, a voltage is applied between the substrate 13 and the target member 15. In the present embodiment, the power supply unit 18 is a constant power supply device.

  The magnetron 23 is disposed on the opposite side of the target member 15 from the substrate 13 and moves along the target member 15. In the present embodiment, the magnetron 23 reciprocates in the direction indicated by the arrow 23a. At this time, the magnetron 23 includes a first region A1 that overlaps the opening 16a of the mask holding member 16 when viewed from the direction perpendicular to the target member 15, and a second region A2 that does not overlap the opening 16a of the mask holding member 16. And can be moved to both.

FIG. 1B shows the positional relationship between the magnetron and the mask holding member when viewed from the direction perpendicular to the target member. In the present embodiment, the mask holding member 16 has a frame shape having a rectangular opening 16a at the center. In the present embodiment, the magnetron 23 is long and reciprocates in the short direction as indicated by the arrow 23a.
The target material jumping out of the target member 15 is deposited not only on the substrate 13 but also on the inner wall of the vacuum chamber 11, the mask holding member 16, and the mask 17. For this reason, maintenance of the sputtering apparatus is periodically performed.

  The inventor paid attention to the voltage applied between the substrate 13 and the target member 15 of the sputtering apparatus, and observed the difference in voltage between immediately before and after the maintenance. The following results were obtained. FIG. 2A shows the voltage measurement result immediately before the maintenance, and FIG. 2B shows the voltage measurement result immediately after the maintenance. 2A and 2B, the voltage measurement results are expressed as a ratio when the average voltage value is 100%. Focusing on FIG. 2A, it can be seen that the voltage changes at about 100% and periodically jumps to about 115%. This period of voltage jumping coincides with the period of reciprocal movement of the magnetron 23. That is, when the magnetron 23 is located in the first region A1 that overlaps the opening of the mask holding member 16, the voltage is about 100%, and the magnetron 23 is located in the second region A2 that does not overlap the opening of the mask holding member 16. The voltage is about 115%. The difference in voltage value between the first region A1 and the second region A2 is that the plasma density distribution changes as the magnetron 23 moves, so that the impedance between the substrate 13 and the target member 15 changes. It is thought that it is from. 2B, when the magnetron 23 is located in the first area A1, the voltage changes at about 100%, and when the magnetron 23 is located in the second area A2, the voltage is about 105%. . Comparing both FIGS. 2A and 2B, when the magnetron 23 is in the first region A1, the voltage is the same level immediately before and after the maintenance, whereas the magnetron 23 is in the second region A2. It can be seen that the voltage is different immediately before and after the maintenance. FIG. 3 shows the average value, minimum value, and maximum value of the voltage. The same tendency was observed in the two samples, samples 1 and 2.

The inventor considered as follows why the voltage when the magnetron 23 is in the second region A2 is different between immediately before and after the maintenance.
FIG. 4 schematically shows the state of the sputtering apparatus immediately before and after the maintenance. Immediately before maintenance, there is a deposit 24 of target material. On the other hand, the deposit 24 of the target material does not exist immediately after the maintenance. If the deposit 24 of the target material is made of a conductive material, it is considered that a leak current easily flows through the wiring 22 immediately before the maintenance, and it is difficult for the leak current to flow immediately after the maintenance. When the deposit 24 of the target material is present, the power supply unit 18 tries to flow a leakage current in addition to the discharge current between the substrate 13 and the target member 15, so that the voltage immediately before the maintenance is higher than that immediately after the maintenance. Become. This is considered to be the reason why the voltage is different between immediately before and after the maintenance when the magnetron 23 is in the second region A2. For such a reason, it is assumed that the leakage current increases as the amount of deposit 24 increases, and the voltage increases accordingly.

The maintenance time determination method for a sputtering apparatus according to one embodiment of the present invention has been obtained based on such new knowledge.
[Outline of One Embodiment of the Present Invention]
A sputtering apparatus maintenance time determination method according to an aspect of the present invention includes a substrate holding member that holds a substrate, a target member that holds the target member so that the target member containing a conductive material and the substrate face each other. An insulating material provided between a member, the substrate and the target member, having an opening in a region of a gap between the substrate and the target member, and holding a mask disposed in the opening A mask holding member that is configured, a power supply unit that applies a voltage between the substrate and the target member, and a target member that is disposed on the opposite side of the substrate from the direction perpendicular to the target member. A magnetron that moves to both the first region that overlaps the opening of the mask holding member and the second region that does not overlap the opening of the mask holding member; In the sputtering apparatus maintenance time determination method, when the magnetron is in the second region, a physical quantity indicative of a voltage applied between the substrate and the target member is measured, and a measured value of the physical quantity Based on the above, it is determined whether maintenance of the sputtering apparatus is necessary.

The determination as to whether maintenance of the sputtering apparatus is necessary may be made by comparing the measured value with a reference value.
In addition, at the time of the first film formation using the sputtering apparatus or the first film formation after the last maintenance, the physical quantity when the magnetron is in the second region is measured, and the obtained measurement value The reference value may be calculated based on the above.

Further, the physical quantity when the magnetron is in the first region is measured, and whether or not the maintenance of the sputtering apparatus is necessary is further determined when the magnetron is in the first region. It may be based on the measured value.
The measurement of the physical quantity when the magnetron is in the first area is performed a first time per unit time, and the measurement of the physical quantity when the magnetron is in the second area is unit time. The second number of times may be performed, and the second number may be greater than the first number.

In addition, whether the maintenance of the sputtering apparatus is necessary is determined by measuring the physical quantity when the magnetron is in the first area and measuring the physical quantity when the magnetron is in the second area. It is good also as performing by comparing the difference or ratio with a value, and a reference value.
In addition, when the magnetron is in the first region and the second region in the first film formation using the sputtering apparatus or the first film formation after the last maintenance. The physical value may be measured, and the reference value may be calculated based on the difference or ratio of the obtained measurement values.

The sputtering apparatus further includes a position sensor for detecting the position of the magnetron, and the measurement of the physical quantity has been detected when the position of the magnetron is in the second region. It may be done sometimes.
Further, the power supply unit may be a constant power supply device.
The physical quantity is at least one of a voltage applied between the substrate and the target member, a current flowing between the substrate and the target member, and a current flowing through the ground path of the mask holding member. It is good also as being.

  A sputtering apparatus maintenance method according to an aspect of the present invention includes a substrate holding member that holds a substrate, a target holding member that holds the target member so that the target member containing a conductive material and the substrate face each other. And an insulating material that is provided between the substrate and the target member, has an opening in a gap region between the substrate and the target member, and holds a mask disposed in the opening. The mask holding member, a power supply unit for applying a voltage between the substrate and the target member, and the mask disposed on the opposite side of the target member from the substrate and viewed from a direction perpendicular to the target member. A magnetron that moves to both the first region that overlaps the opening of the holding member and the second region that does not overlap the opening of the mask holding member. In the maintenance method of the sputtering apparatus, when the magnetron is in the second region, a physical quantity indicating a voltage applied between the substrate and the target member is measured, and based on the measured value of the physical quantity It is determined whether maintenance of the sputtering apparatus is necessary, and maintenance is performed when it is determined that maintenance is necessary.

  A sputtering system according to an aspect of the present invention includes a substrate holding member that holds a substrate, a target holding member that holds the target member such that the target member and the substrate face each other, and the substrate and the target member. A mask holding member made of an insulating material that is provided between the substrate and the target member and has an opening in a region of a gap between the substrate and the target member and holds the mask disposed in the opening; And a power supply unit for applying a voltage between the target member and the target member, and the target member is disposed on a side opposite to the substrate, and overlaps with an opening of the mask holding member when viewed from a direction perpendicular to the target member. A magnetron that moves to both the first region and the second region that does not overlap the opening of the mask holding member, and the magnetron is in the second region A measurement unit that measures a physical quantity that indicates a voltage applied between the substrate and the target member, and a determination unit that determines whether maintenance of the sputtering apparatus is necessary based on the measured value of the physical quantity And comprising.

The determination as to whether maintenance of the sputtering apparatus is necessary may be made by comparing the measured value with a reference value.
Further, the physical quantity when the magnetron is in the first region is measured, and whether or not the maintenance of the sputtering apparatus is necessary is further determined when the magnetron is in the first region. It may be based on the measured value.

The measurement of the physical quantity when the magnetron is in the first area is performed a first time per unit time, and the measurement of the physical quantity when the magnetron is in the second area is unit time. The second number of times may be performed, and the second number may be greater than the first number.
In addition, whether the maintenance of the sputtering apparatus is necessary is determined by measuring the physical quantity when the magnetron is in the first area and measuring the physical quantity when the magnetron is in the second area. It is good also as performing by comparing the difference or ratio with a value, and a reference value.

The sputtering apparatus further includes a position sensor for detecting the position of the magnetron, and the measurement of the physical quantity has been detected when the position of the magnetron is in the second region. It may be done sometimes.
Further, the power supply unit may be a constant power supply device.
The physical quantity is at least one of a voltage applied between the substrate and the target member, a current flowing between the substrate and the target member, and a current flowing through the ground path of the mask holding member. It is good also as being.

DESCRIPTION OF EMBODIMENTS Embodiments for carrying out the present invention will be described in detail with reference to the drawings.
[First Embodiment]
<Configuration>
FIG. 5 is a diagram showing the configuration of the sputtering apparatus according to the first embodiment of the present invention.
The sputtering apparatus includes a position sensor 25, a measurement unit 26, a determination unit 27, and a display unit 28 in addition to the configuration of FIG. The same components as those in FIG.

The position sensor 25 detects the position of the magnetron 23. Specifically, since the position sensor 25 is arranged in the second region A2, it can detect whether or not the magnetron 23 is in the second region A2. As the position sensor 25, an optical sensor, a magnetic sensor, a mechanical sensor, or the like can be used.
The measurement unit 26 measures the voltage applied between the substrate 13 and the target member 15 when the magnetron 23 is in the second region A2. Specifically, the measurement unit 26 monitors the detection voltage output from the voltage detection unit 21, and the voltage when the detection result that the magnetron 23 is in the second region A <b> 2 is obtained from the position sensor 25. The detection voltage of the detection unit 21 is acquired. Accordingly, it is possible to measure a voltage (hereinafter sometimes referred to as “second measurement value”) applied between the substrate 13 and the target member 15 when the magnetron 23 is in the second region A2.

  The determination unit 27 determines whether maintenance is necessary based on the second measurement value acquired by the measurement unit 26. In the present embodiment, this determination is made by comparing the second measurement value with the reference value. For example, in the case of FIG. 2A, the second measurement value is approximately 115%, and in the case of FIG. 2B, the second measurement value is approximately 105%. At this time, if the reference value is, for example, 110%, in the case of FIG. 2A, the second measurement value exceeds the reference value, so that it is determined that maintenance is necessary, and FIG. In this case, since the second measurement value is equal to or less than the reference value, it is determined that maintenance is not necessary.

  2A and 2B show the results of measuring the voltage every second without providing the position sensor 25. FIG. Therefore, the second measurement value is not always a measurement result at the same position every time. This is considered to be the reason why the second measurement value fluctuates every time. In the present embodiment, since the position sensor 25 is provided, the second measurement value at the same position can be obtained every time. As a result, fluctuations in the second measurement value can be suppressed, and measurement accuracy can be increased.

  Even if the position sensor 25 is provided, the second measurement value is considered to have a measurement error. Therefore, the measurement accuracy can be further improved by acquiring the second measurement value a plurality of times and using the average value thereof. In the present embodiment, the reference value is determined based on the second measurement value obtained at the time of the first film formation using the sputtering apparatus or the first film formation after the last maintenance. The For example, it is determined by a method of adding a specified value to the second measured value at the time of the first film formation after maintenance or multiplying the specified value. In the case of FIG. 2B, the second measured value is approximately 105%. If 5% is added to 105%, 110% is obtained. This 110% is set as a reference value. In addition, also when determining a reference value, the precision of a measurement can be improved by acquiring a 2nd measured value in multiple times and using those average values.

The display unit 28 displays the determination result of the determination unit 27. Specifically, if it is determined that maintenance is necessary, the arrival of the maintenance time is notified, and if it is determined that maintenance is not necessary, the arrival of the maintenance time is notified. When the user is notified that the maintenance time has come, the user performs maintenance.
Note that the functions of the measurement unit 26, the determination unit 27, and the display unit 28 are specifically realized by a computer having a memory and a CPU executing a program.

FIG. 6 shows the relationship between the position of the magnetron and time, and the relationship between the voltage applied between the substrate and the target member and time. P2 in the figure is the position of the position sensor 25. According to this, the magnetron 23 reaches the position P2 at times t1, t2, and t3, respectively. The voltages V1, V2, and V3 at this time are each measured as the second measurement value.
<Operation>
A flow of maintenance time determination processing executed by the sputtering apparatus will be described.

FIG. 7 shows a flowchart of the maintenance time determination process according to the first embodiment of the present invention. Conditions for determining the maintenance time are determined in advance, and the sputtering apparatus executes processing when the conditions are satisfied. For example, it may be executed every time the film is formed, or may be executed once every day by determining the time.
First, the sputtering apparatus waits until the position sensor 25 detects the magnetron 23 (step S101: No). If the position sensor 25 detects the magnetron 23 (step S101: Yes), the voltage (second measured value) applied between the substrate 13 and the target member 15 at that time is acquired (step S102). The second measured value is stored (step S103). If the number of times of voltage acquisition is less than the predetermined number of times (step S104: No), the sputtering apparatus returns to step S101. An average value is calculated (step S105). Furthermore, if the average value of the second measurement value is higher than the reference value (step S106: Yes), the sputtering apparatus notifies that the maintenance time has come (step S107), and the average value of the second measurement value. Is below the reference value (step S106: No), it is notified that the maintenance time has not yet arrived (step S108).

Next, a flow of reference value determination processing executed by the sputtering apparatus will be described.
FIG. 8 shows a flowchart of the reference value determination process according to the first embodiment of the present invention. As described above, the reference value determination process is executed at the time of the first film formation using the sputtering apparatus or the first film formation after the last maintenance.
The sputtering apparatus first waits until the position sensor 25 detects the magnetron 23 (step S121: No). If the position sensor 25 detects the magnetron 23 (step S121: Yes), the voltage (second measured value) applied between the substrate 13 and the target member 15 at that time is acquired (step S122). The measured second measurement value is stored (step S123). If the number of voltage acquisition times is less than the predetermined number (step S124: No), the sputtering apparatus returns to step S121, and if it is equal to or more than the predetermined number (step S124: Yes), the second measurement for the stored predetermined number of times An average value is calculated (step S125). The sputtering apparatus further calculates a reference value by a method of adding a specified value to the average value of the second measurement values or multiplying the specified value (step S126), and stores the calculated reference value (step S127). ).

<Effect>
The sputtering apparatus determines the maintenance time based on the voltage (second measured value) applied between the substrate 13 and the target member 15 when the magnetron 23 is in the second region A2. That is, a specific physical quantity is actually measured, and the maintenance time is determined based on the measured value. Therefore, maintenance can be performed at a suitable time even when the deposition rate of the target material varies.

Further, the sputtering apparatus obtains the second measurement value a plurality of times when determining the maintenance time, and uses the average value thereof. Thus, the measurement accuracy can be increased by using the average value.
Further, the sputtering apparatus determines the reference value based on the second measurement value at the time of the first film formation or the first film formation after the last maintenance. Thereby, the shift | offset | difference of the reference value by implementing maintenance can be corrected each time.

Further, the sputtering apparatus also acquires the second measurement value a plurality of times and uses the average value thereof when determining the reference value. Thus, the measurement accuracy can be increased by using the average value.
[Second Embodiment]
<Configuration>
In the first embodiment, the maintenance time is determined based on the second measurement value. On the other hand, in the second embodiment, the maintenance time is determined based on the difference or ratio between the first measurement value and the second measurement value. Here, the first measurement value is a voltage applied between the substrate 13 and the target member 15 when the magnetron 23 is in the first region A1.

FIG. 9 is a diagram showing a configuration of a sputtering apparatus according to the second embodiment of the present invention.
The sputtering apparatus includes a first position sensor 29 in addition to the configuration of FIG. Further, instead of the measurement unit 26 and the determination unit 27, a measurement unit 226 and a determination unit 227 are provided. The same components as those in FIG.
Similar to the second position sensor 25, the first position sensor 29 detects the position of the magnetron 23. However, unlike the second position sensor 25, the first position sensor 29 is arranged in the first area A1. Therefore, the first position sensor 29 can detect whether or not the magnetron 23 is in the first region A1. As the first position sensor 29, an optical sensor, a magnetic sensor, a mechanical sensor, or the like can be used.

The measurement unit 226 measures the voltage (first measurement value) applied between the substrate 13 and the target member 15 when the magnetron 23 is in the first region A1, and the magnetron 23 is in the second region A2. At a certain time, a voltage (second measured value) applied between the substrate 13 and the target member 15 is measured.
The determination unit 227 determines whether or not maintenance is necessary based on the difference or ratio between the first measurement value and the second measurement value acquired by the measurement unit 226. In the present embodiment, this determination is made by comparing the average value of the differences or ratios with the reference value. For example, in the case of FIG. 2A, the first measurement value is approximately 100%, and the second measurement value is approximately 115%. Therefore, the difference between the first measurement value and the second measurement value is 15%, and the ratio between the first measurement value and the second measurement value is 1.15. On the other hand, in the case of FIG. 2B, the first measurement value is approximately 100%, and the second measurement value is approximately 105%. Therefore, the difference between the first measurement value and the second measurement value is 5%, and the ratio between the first measurement value and the second measurement value is 1.05. At this time, if the reference value of the difference is set to 10%, for example, the difference between the first measurement value and the second measurement value exceeds the reference value in the case of FIG. In the case of FIG. 2B, the difference between the first measurement value and the second measurement value is equal to or less than the reference value, so that it is determined that maintenance is not necessary. Further, if the reference value of the ratio is set to 1.10, for example, in the case of FIG. 2 (a), the ratio between the first measurement value and the second measurement value exceeds the reference value, so that maintenance is required. In the case of FIG. 2B, the ratio between the first measurement value and the second measurement value is equal to or less than the reference value, so that it is determined that maintenance is unnecessary.

Note that, similarly to the first embodiment, the first measurement value and the second measurement value change each time measurement is performed. Therefore, it is preferable to acquire these differences or ratios a plurality of times and use their average values.
As in the first embodiment, the reference value is the first measured value and the second measured value at the time of the first film formation using the sputtering apparatus or the first film formation after the last maintenance. It is good also as acquiring and determining based on these difference or ratio.

  FIG. 10 shows the relationship between the position of the magnetron and time and the relationship between the voltage applied between the substrate and the target member and time. In the figure, P 1 is the position of the first position sensor 29, and P 2 is the position of the second position sensor 25. According to this, the magnetron 23 reaches the position P1 at times t1, t11, and t21, respectively. The voltages V1, V11, and V21 at this time are each measured as the first measurement value. Magnetron 23 reaches position P2 at times t2, t12, and t22, respectively. The voltages V2, V12, and V22 at this time are measured as the second measurement values.

<Operation>
A flow of maintenance time determination processing executed by the sputtering apparatus will be described.
FIG. 11 shows a flowchart of a maintenance time determination process according to the second embodiment of the present invention. Here, the case where the ratio of the first measurement value and the second measurement value is used is shown.
First, the sputtering apparatus waits until the first position sensor 29 detects the magnetron 23 (step S201: No). If the first position sensor 29 detects the magnetron 23 (step S201: Yes), the voltage (first measured value) applied between the substrate 13 and the target member 15 at that time is acquired (step S202). . Next, the sputtering apparatus waits until the second position sensor 25 magnetron 23 is detected (step S203: No). If the second position sensor 25 detects the magnetron 23 (step S203: Yes), the voltage (second measured value) applied between the substrate 13 and the target member 15 at that time is acquired (step S204). .

  The sputtering apparatus calculates a ratio between the obtained first measurement value and the second measurement value (step S205), and stores the obtained measurement value ratio (step S206). If the number of times of voltage acquisition is less than the predetermined number of times (step S207: No), the sputtering apparatus returns to step S201, and if it is equal to or greater than the predetermined number of times (step S207: Yes), the measured value ratio for the predetermined number of times stored. Is calculated (step S208). Furthermore, if the average value of the measurement value ratio is higher than the reference value (step S209: Yes), the sputtering apparatus notifies that the maintenance time has come (step S210), and the average value of the measurement value ratio is the reference value. If it is equal to or less than the value (step S209: No), it is notified that the maintenance time has not yet arrived (step S211).

Next, a flow of reference value determination processing executed by the sputtering apparatus will be described.
FIG. 12 is a flowchart of the reference value determination process according to the second embodiment of the present invention.
First, the sputtering apparatus waits until the first position sensor 29 detects the magnetron 23 (step S221: No). If the first position sensor 29 detects the magnetron 23 (step S221: Yes), the voltage (first measurement value) applied between the substrate 13 and the target member 15 at that time is acquired (step S222). . Next, the sputtering apparatus waits until the second position sensor 25 magnetron 23 is detected (step S223: No). If the second position sensor 25 detects the magnetron 23 (step S223: Yes), the voltage (second measured value) applied between the substrate 13 and the target member 15 at that time is acquired (step S224). .

  The sputtering apparatus calculates the ratio between the acquired first measurement value and the second measurement value (step S225), and stores the obtained measurement value ratio (step S226). If the number of times of voltage acquisition is less than the predetermined number of times (step S227: No), the sputtering apparatus returns to step S221. If the number of times of voltage acquisition is equal to or greater than the predetermined number of times (step S227: Yes), Is calculated (step S228). The sputtering apparatus further calculates a reference value by a method of adding a specified value to the average value of the measured value ratios or multiplying the specified value (step S229), and stores the calculated reference value (step S230). .

[Third Embodiment]
In the first embodiment, the voltage is measured only at one place (position P2) in the second region A2. On the other hand, in the third embodiment, the voltage is measured at two places in the second region A2.
FIG. 13 is a diagram showing a configuration of a sputtering apparatus according to the third embodiment of the present invention.

The sputtering apparatus includes a position sensor 30, a measurement unit 326, and a determination unit 327 instead of the position sensor 25, the measurement unit 26, and the determination unit 27 in FIG. The same components as those in FIG.
The position sensor 30 detects the position of the magnetron 23 by detecting the distance from the magnetron 23. An optical sensor can be used as the position sensor 30.

  The measurement unit 326 measures a voltage (second measurement value) applied between the substrate 13 and the target member 15 when the magnetron 23 is at the first position in the second region A2, and the magnetron 23 When in the second position in the second region A2, the voltage (second measurement value) applied between the substrate 13 and the target member 15 is measured. Specifically, the measurement unit 326 monitors the detection voltage output from the voltage detection unit 21 and the detection signal output from the position sensor 30, and the magnetron 23 is in the first and second positions. Each of the detection voltages of the voltage detector 21 is acquired when positioned at each of the positions.

The determination unit 327 determines whether maintenance is necessary based on the average value of the second measurement value at the first position and the second measurement value at the second position acquired by the measurement unit 326. By using the average value, the accuracy of measurement can be increased.
FIG. 14 shows the relationship between the position of the magnetron and time, and the relationship between the voltage applied between the substrate and the target member and time. In the figure, P11 and P12 are positions in the second region A2. According to this, the magnetron 23 reaches positions P12, P11, and P12 at times t1, t2, and t3, respectively. The voltages V1, V2, and V3 at this time are each measured as the second measurement value. And the average value of a 2nd measured value is obtained by averaging voltage V1, V2, V3. Further, the magnetron 23 reaches positions P12, P11, and P12 at times t21, t22, and t23, respectively. The voltages V21, V22, and V23 at this time are measured as second measurement values. And the average value of a 2nd measured value is obtained by averaging voltage V21, V22, V23. These average values may be used alone, or these may be further averaged and used.

[Fourth Embodiment]
In the third embodiment, the measurement rate (unit time) of the voltage applied between the substrate 13 and the target member 15 when the magnetron 23 is in the first region A1 and when it is in the second region A2. The number of times of measurement of the per-voltage is the same, but the measurement rate is different in the fourth embodiment. The measurement rate can be changed based on the detection result of the position sensor 30.

  FIG. 15 shows the relationship between the position of the magnetron and time, and the relationship between the voltage applied between the substrate and the target member and time. In the figure, Δt1 is a voltage measurement cycle when the magnetron 23 is in the first region A1, and Δt2 is a voltage measurement cycle when the magnetron 23 is in the second region A2. When Δt1 and Δt2 are compared, Δt2 is shorter than Δt1. That is, the number of times of voltage measurement per unit time is greater when the magnetron 23 is in the second region A2 than when it is in the first region A1. Thus, by increasing the measurement rate when the magnetron 23 is in the second region A2, the number of samples for obtaining the average value of the second measurement values can be increased, and the accuracy can be further increased.

[Modification]
As mentioned above, although this invention was demonstrated based on embodiment, this invention is not limited to the said embodiment. Below, the modification of the said embodiment is demonstrated.
(1) Physical quantity to be measured In the embodiment, the maintenance time is determined based on the voltage applied between the substrate and the target member, but the voltage applied between the substrate and the target member is used as an index. The present invention is not limited to this as long as it is a physical quantity. When the power supply unit 18 is a constant power supply device, there is a certain relationship between voltage and current, so the current is a physical quantity that indicates the voltage. Therefore, as shown in FIG. 16A, a current detection unit 31 may be provided in series with the power supply unit 18 and the maintenance time may be determined based on the detected current of the current detection unit 31. As described with reference to FIG. 4, the voltage applied between the substrate 13 and the target member 15 when the magnetron 23 is in the second region A2 depends on the magnitude of the leakage current through the ground path. doing. Therefore, the leakage current through the ground path is a physical quantity indicating the voltage. Therefore, as illustrated in FIG. 16B, a current detection unit 32 may be provided in the wiring 22 corresponding to the ground path, and the maintenance time may be determined based on the detection current of the current detection unit 32.

(2) Position Detection In the embodiment, the position of the magnetron 23 is detected using a position sensor, but the present invention is not limited to this. For example, as shown in FIG. 2B, the voltage is different between the first region A1 and the second region A2 even when there is no deposit immediately after maintenance. Therefore, the voltage between the substrate 13 and the target member 15 is monitored, and if the voltage rises above a certain value, it can be considered that the magnetron 23 is in the second region. In this case, a position sensor is unnecessary.

Further, when a motor or actuator is used as a power source for reciprocating the magnetron, the position of the magnetron 23 can be detected by the number of rotations or the amount of movement. In this case, a separate position sensor is not necessary.
(3) Average In the embodiment, the voltage is acquired a plurality of times and the average value is obtained in order to increase the accuracy of measurement, but the present invention is not limited to this. Only one voltage measurement may be determined.

(4) Mask Holding Member In the embodiment, the mask holding member 16 has a frame shape having a rectangular opening 16a at the center, but the present invention is not limited to this. For example, a shape lacking one side of the frame shape may be used, or a shape lacking two opposite sides of the frame shape may be used.
(5) Hardware configuration of measurement unit, determination unit, and display unit In the embodiment, the functions of the measurement unit 26, the determination unit 27, and the display unit 28 are realized by a computer built in the sputtering apparatus. The invention is not limited to this. For example, some or all of these may be realized by hardware different from the sputtering apparatus. For example, the function of the measurement unit 26 is realized by a sputtering apparatus, the function of the determination unit 27 is realized by a manufacturing execution system (MES) connected to the sputtering apparatus via a network, and the function of the display unit 28 is manufactured. It may be realized by a client PC connected to the system via a network.

(6) Magnetron Movement Mode In the embodiment, the magnetron 23 reciprocates, but the present invention is not limited to this. It is only necessary to be able to move between a position overlapping the opening of the mask holding member and a position not overlapping the opening as viewed from the direction perpendicular to the target member. For example, a disk-shaped magnetron may be moved around the target member.

  The present invention can be used in a sputtering apparatus.

DESCRIPTION OF SYMBOLS 11 Vacuum chamber 12 Substrate holding member 13 Substrate 14 Target holding member 15 Target member 16 Mask holding member 16a Opening part 17 Mask 18 Power supply part 19 Wiring 20 Wiring 21 Voltage detection part 22 Wiring 23 Magnetron 24 Deposit 25 Position sensor 26 Measuring part 27 Determination unit 28 Display unit 29 Position sensor 30 Position sensor 31 Current detection unit 32 Current detection unit 226 Measurement unit 227 Determination unit 326 Measurement unit 327 Determination unit

Claims (17)

A substrate holding member for holding the substrate;
A target holding member for holding the target member so that the target member containing a conductive material and the substrate face each other;
The insulating member is provided between the substrate and the target member, and has an opening in a gap region between the substrate and the target member, and holds a mask disposed in the opening. A mask holding member;
A power supply for applying a voltage between the substrate and the target member;
A second region that is disposed on the opposite side of the substrate from the target member and overlaps the opening of the mask holding member when viewed from a direction perpendicular to the target member, and a second that does not overlap the opening of the mask holding member A magnetron that moves both to and
In a method for determining the maintenance time of a sputtering apparatus comprising:
A voltage applied between the substrate and the target member, a current flowing between the substrate and the target member when the magnetron is in the second region during film formation ; and Measure at least one physical quantity of current flowing through the ground path of the mask holding member ,
Determining whether cleaning or replacement maintenance of the mask or the mask holding member is necessary based on the measured value of the physical quantity;
A method for determining the maintenance time of a sputtering apparatus. Before texture Maintenance must determine whether or not is performed by comparing the measured value and the reference value,
The maintenance time determination method of the sputtering apparatus according to claim 1. Based on the measured value obtained by measuring the physical quantity when the magnetron is in the second region at the time of the first film formation using the sputtering apparatus or the first film formation after the last maintenance. To calculate the reference value,
The method for determining the maintenance time of the sputtering apparatus according to claim 2. Further, the physical quantity is measured when the magnetron is in the first region during film formation ,
Before texture Maintenance must determine whether or not further based on the measurement value when the magnetron is in the first region,
The maintenance time determination method of the sputtering apparatus according to claim 1. The measurement of the physical quantity when the magnetron is in the first region is performed a first number of times per unit time,
The measurement of the physical quantity when the magnetron is in the second region is performed a second number of times per unit time,
The second number of times is greater than the first number of times;
The method for determining the maintenance time of the sputtering apparatus according to claim 4. Before texture Maintenance must determine whether or not the between the measured value of the physical quantity when the magnetron and the measured value of the physical quantity when the magnetron is in the first region is in the second region Done by comparing the difference or ratio with a reference value,
The method for determining the maintenance time of the sputtering apparatus according to claim 4. The determination as to whether the maintenance is necessary is performed by comparing the measured value with a reference value,
In the first film formation using the sputtering apparatus or the first film formation after the last maintenance, the physical quantity when the magnetron is in the first region and the physical amount when the magnetron is in the second region Measuring the physical quantity, and calculating the reference value based on the difference or ratio of the obtained measurement values,
The method for determining the maintenance time of the sputtering apparatus according to claim 5. The sputtering apparatus further includes a position sensor that detects a position of the magnetron,
The measurement of the physical quantity is performed when the detection result of the position sensor detects that the position of the magnetron is in the second region.
The maintenance time determination method of the sputtering apparatus according to claim 1. The power supply unit is a constant power supply device.
The maintenance time determination method of the sputtering apparatus according to claim 1. A substrate holding member for holding the substrate;
A target holding member for holding the target member so that the target member containing a conductive material and the substrate face each other;
The insulating member is provided between the substrate and the target member, and has an opening in a gap region between the substrate and the target member, and holds a mask disposed in the opening. A mask holding member;
A power supply for applying a voltage between the substrate and the target member;
A second region that is disposed on the opposite side of the substrate from the target member and overlaps the opening of the mask holding member when viewed from a direction perpendicular to the target member, and a second that does not overlap the opening of the mask holding member A magnetron that moves both to and
In a maintenance method of a sputtering apparatus comprising:
A voltage applied between the substrate and the target member, a current flowing between the substrate and the target member when the magnetron is in the second region during film formation ; and Measure at least one physical quantity of current flowing through the ground path of the mask holding member ,
Determining whether maintenance of cleaning or replacement of the mask or the mask holding member is necessary based on the measured value of the physical quantity;
Performing the maintenance when the maintenance is judged to be necessary,
Maintenance method of sputtering equipment. A substrate holding member for holding the substrate;
A target holding member for holding the target member such that the target member and the substrate face each other;
The insulating member is provided between the substrate and the target member, and has an opening in a gap region between the substrate and the target member, and holds a mask disposed in the opening. A mask holding member;
A power supply for applying a voltage between the substrate and the target member;
A second region that is disposed on the opposite side of the substrate from the target member and overlaps the opening of the mask holding member when viewed from a direction perpendicular to the target member, and a second that does not overlap the opening of the mask holding member A magnetron that moves both to and
A voltage applied between the substrate and the target member, a current flowing between the substrate and the target member when the magnetron is in the second region during film formation ; and A measuring unit that measures at least one physical quantity of the current flowing through the ground path of the mask holding member ;
A determination unit that determines whether cleaning or replacement maintenance of the mask or the mask holding member is necessary based on the measured value of the physical quantity;
A sputtering apparatus comprising: Before texture Maintenance must determine whether or not is performed by comparing the measured value and the reference value,
The sputtering apparatus according to claim 11 . Further, the physical quantity is measured when the magnetron is in the first region during film formation ,
Before texture Maintenance must determine whether or not further based on the measurement value when the magnetron is in the first region,
The sputtering apparatus according to claim 11 . The measurement of the physical quantity when the magnetron is in the first region is performed a first number of times per unit time,
The measurement of the physical quantity when the magnetron is in the second region is performed a second number of times per unit time,
The second number of times is greater than the first number of times;
The sputtering apparatus according to claim 13 . Before texture Maintenance must determine whether or not the between the measured value of the physical quantity when the magnetron and the measured value of the physical quantity when the magnetron is in the first region is in the second region Done by comparing the difference or ratio with a reference value,
The sputtering apparatus according to claim 13 . The sputtering apparatus further includes a position sensor that detects a position of the magnetron,
The measurement of the physical quantity is performed when the detection result of the position sensor detects that the position of the magnetron is in the second region.
The sputtering apparatus according to claim 11 . The power supply unit is a constant power supply device.
The sputtering apparatus according to claim 11 .

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