JP2002025957A - Cleaning method for removing organic material of semiconductor wafer - Google Patents
Cleaning method for removing organic material of semiconductor waferInfo
- Publication number
- JP2002025957A JP2002025957A JP2000211954A JP2000211954A JP2002025957A JP 2002025957 A JP2002025957 A JP 2002025957A JP 2000211954 A JP2000211954 A JP 2000211954A JP 2000211954 A JP2000211954 A JP 2000211954A JP 2002025957 A JP2002025957 A JP 2002025957A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- mirror
- cleaning
- polished
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は半導体ウエハの有機
物除去洗浄方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning and removing organic substances from a semiconductor wafer.
【0002】[0002]
【従来の技術】化合物半導体ウエハはショットキーゲー
ト電界トランジスタ(MESFET)、高移動度トラン
ジスタ(HEMT)、ヘテロ接合バイポーラトランジス
タ(HBT)、種々な受発光デバイス等の半導体デバイ
スのベースウエハ材として広く用いられている。2. Description of the Related Art Compound semiconductor wafers are widely used as base wafer materials for semiconductor devices such as Schottky gate field-effect transistors (MESFETs), high mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), and various light emitting and receiving devices. Have been.
【0003】これらの半導体デバイスの能動層は鏡面研
磨化合物半導体ウエハの表面上に分子線エピタキシャル
成長(MBE法)、有機金属気層エピタキシャル成長
(MOVPE法)、イオン打ち込み法等により作成され
る。The active layers of these semiconductor devices are formed on the surface of a mirror-polished compound semiconductor wafer by molecular beam epitaxy (MBE), metal organic vapor phase epitaxy (MOVPE), ion implantation, or the like.
【0004】一般に、鏡面研磨化合物半導体ウエハの製
造手順は次のように行われている。 化合物半導体単結晶体インゴットの製造 まず、化合物半導体単結晶体インゴットを製造する。[0004] Generally, the procedure for manufacturing a mirror-polished compound semiconductor wafer is as follows. Production of Compound Semiconductor Single Crystal Ingot First, a compound semiconductor single crystal ingot is produced.
【0005】 化合物半導体単結晶体インゴットのス
ライス作業 次に、上記で得られた化合物半導体単結晶体インゴッ
トをスライス装置に装着し、スライスすることによりス
ライス化合物半導体ウエハとする。Slicing work of compound semiconductor single crystal ingot Next, the compound semiconductor single crystal ingot obtained above is mounted on a slicing apparatus and sliced to obtain a slice compound semiconductor wafer.
【0006】 スライス化合物半導体ウエハの粗研磨 次に、上記で得られたスライス化合物半導体ウエハを
粗研磨装置に装着し、それから#800〜#3000の
アルミナ砥粒を用いて粗研磨することにより粗研磨化合
物半導体ウエハとする。この粗研磨は#800〜#30
00のアルミナ砥粒でソーマークを除去するようにラッ
プする。Rough polishing of sliced compound semiconductor wafer Next, the sliced compound semiconductor wafer obtained above is mounted on a rough polishing apparatus, and then coarsely polished by using alumina abrasives of # 800 to # 3000. This is a compound semiconductor wafer. This rough polishing is from # 800 to # 30
Lapping is carried out so as to remove the saw mark with 00 abrasive grains.
【0007】ここで得られた粗研磨化合物半導体ウエハ
は平坦性が高められている。[0007] The roughly polished compound semiconductor wafer obtained here has improved flatness.
【0008】 粗研磨化合物半導体ウエハの鏡面研磨 次に、表面平坦度を高精度に仕上げられた貼付ブレード
を用意し、それを鏡面研磨装置に装着する。Mirror Polishing of Roughly Polished Compound Semiconductor Wafer Next, an attaching blade whose surface flatness is finished with high precision is prepared, and it is mounted on a mirror polishing machine.
【0009】次に、その貼付ブレード上に上記で得ら
れた粗研磨化合物半導体ウエハをワックス等を用いて貼
り付ける。Next, the roughly polished compound semiconductor wafer obtained above is attached to the attaching blade using wax or the like.
【0010】次に、この貼付ブレード上に貼り付けた粗
研磨化合物半導体ウエハをメカノケミカル研磨し、鏡面
研磨化合物半導体ウエハとする。[0010] Next, the rough polishing compound semiconductor wafer stuck on the sticking blade is subjected to mechanochemical polishing to obtain a mirror-polished compound semiconductor wafer.
【0011】ここにおいてメカノケミカル研磨には次の
ようなものを用いる。Here, the following is used for the mechanochemical polishing.
【0012】a.研磨液…次亜塩素酸系水溶液、臭素〜
メタノール溶液、コロイダルシリカ b.研磨布…表面に多孔質層を有する研磨布 鏡面研磨化合物半導体ウエハの脱脂、洗浄 次に、上記で得られた鏡面研磨化合物半導体ウエハは
脱脂処理、洗浄処理、超純水による超純水洗浄を順次行
う。A. Polishing solution: hypochlorous acid aqueous solution, bromine ~
Methanol solution, colloidal silica b. Polishing cloth: polishing cloth having a porous layer on the surface Degreasing and cleaning of the mirror-polished compound semiconductor wafer Next, the mirror-polished compound semiconductor wafer obtained above is subjected to degreasing treatment, cleaning treatment, and ultrapure water cleaning with ultrapure water. Perform sequentially.
【0013】 超純水洗浄化合物半導体ウエハの乾燥 次に、上記で得られた超純水洗浄化合物半導体ウエハ
をイソプロピルアルコール蒸気乾燥装置内又はスピン乾
燥装置内へ装着する。Drying of Ultrapure Water Cleaning Compound Semiconductor Wafer Next, the ultrapure water cleaning compound semiconductor wafer obtained above is mounted in an isopropyl alcohol vapor dryer or a spin dryer.
【0014】次に、これらの乾燥装置にて所定時間乾燥
することにより鏡面研磨化合物半導体ウエハの乾燥完成
品となる。Then, the wafer is dried for a predetermined period of time by using these drying apparatuses to obtain a finished product of a mirror-polished compound semiconductor wafer.
【0015】[0015]
【発明が解決しようとする課題】さて、上記のような高
精密な研磨作業、洗浄作業、乾燥作業等を行って得た鏡
面研磨化合物半導体ウエハの乾燥完成品の鏡面上にエピ
タキシャル成長作業を行うと、ヘイズ不良が発生する。
このヘイズ不良となった半導体デバイスは性能が著しく
劣り、実用することができない。[0005] Now, when an epitaxial growth operation is performed on the mirror surface of a dried and finished product of a mirror-polished compound semiconductor wafer obtained by performing the above-described highly precise polishing operation, cleaning operation, drying operation, and the like. And haze defects occur.
The semiconductor device having the haze defect has extremely poor performance and cannot be put to practical use.
【0016】このヘイズ不良の原因は鏡面上に残留して
いる微量の有機物であることが知られている。It is known that the cause of the haze defect is a trace amount of organic substances remaining on the mirror surface.
【0017】そこで実際のエピタキシャル成長作業で
は、そのエピタキシャル成長作業を行う鏡面研磨化合物
半導体ウエハの乾燥完成品について事前エッチング作業
をするようになっている。Therefore, in an actual epitaxial growth operation, a pre-etching operation is performed on a dried and finished product of a mirror-polished compound semiconductor wafer on which the epitaxial growth operation is performed.
【0018】この鏡面研磨化合物半導体ウエハの乾燥完
成品のエピタキシャル成長作業前のエッチング作業は、
硫酸系エッチャント、アンモニア系エッチャント等のエ
ッチャントによりその表面を1〜2μm深さにエッチン
グする。この1〜2μmのエッチング作業により鏡面研
磨化合物半導体ウエハの乾燥完成品の表面に付着してい
た微量の有機物をも完全に除去することができる。The etching operation before the epitaxial growth operation of the dried and finished product of the mirror-polished compound semiconductor wafer is as follows:
The surface is etched to a depth of 1 to 2 μm with an etchant such as a sulfuric acid-based etchant or an ammonia-based etchant. By this etching operation of 1 to 2 μm, even trace amounts of organic substances adhering to the surface of the dried and finished product of the mirror-polished compound semiconductor wafer can be completely removed.
【0019】しかしこのように一旦鏡面研磨化合物半導
体ウエハの乾燥完成品としたものを再度エッチング作業
することは生産性を低下させると共に製造コストを押し
上げることになる。However, once the mirror-polished compound semiconductor wafer is dried and completed, the etching operation is performed again, thereby lowering the productivity and increasing the manufacturing cost.
【0020】また、この鏡面研磨化合物半導体ウエハの
乾燥完成品をエッチング作業したときには、そのエッチ
ング作業によって鏡面異常不良も発生することがあり、
その結果歩留が低下するという難点があった。In addition, when the dried and finished product of the mirror-polished compound semiconductor wafer is etched, the etching may cause abnormal mirror surface defects,
As a result, there was a problem that the yield was reduced.
【0021】本発明はかかる点に立って為されたもので
あって、その目的とするところは前記した従来技術の難
点を解消し、高価な特殊エッチャントを用いることなく
有機物を完全に除去洗浄することができ、それによって
生産性の大幅な向上と製造コストの大幅な低減とを図る
ことができる半導体ウエハの有機物除去洗浄方法を提供
することにある。The present invention has been made in view of such a point, and an object of the present invention is to solve the above-mentioned disadvantages of the prior art and to completely remove and clean organic substances without using an expensive special etchant. It is therefore an object of the present invention to provide a method of removing and cleaning an organic substance on a semiconductor wafer, whereby the productivity can be significantly improved and the manufacturing cost can be significantly reduced.
【0022】[0022]
【課題を解決するための手段】本発明の要旨とするとこ
ろは、表面を鏡面研磨した半導体ウエハを超純水槽の中
へ浸漬した後、該超純水へ超音波を印加しながら前記鏡
面研磨半導体ウエハの表面に付着している有機物を除去
洗浄することを特徴とする半導体ウエハの有機物除去洗
浄方法にある。The gist of the present invention is to immerse a semiconductor wafer whose surface has been mirror-polished into an ultrapure water tank, and then apply the ultrasonic wave to the ultrapure water while polishing the mirror-polished semiconductor wafer. An organic substance removing and cleaning method for a semiconductor wafer, comprising removing and cleaning an organic substance attached to a surface of a semiconductor wafer.
【0023】本発明において超音波としては、900kH
z 以上の周波数のものであることが好ましい。In the present invention, the ultrasonic wave is 900 kHz.
Preferably, the frequency is equal to or higher than z.
【0024】これは900kHz 以上の周波数の超音波を
超純水中で掛けたときに有機物の除去洗浄効率が急激に
向上するこからである。This is because the efficiency of removing and cleaning organic substances sharply increases when ultrasonic waves having a frequency of 900 kHz or more are applied in ultrapure water.
【0025】また、本発明において超音波としては、4
00W以上であることが好ましい。In the present invention, the ultrasonic wave may be 4
It is preferably at least 00W.
【0026】これは400W以上の超音波を超純水中で
掛けたときに有機物の除去洗浄効率が急激に向上するこ
からである。This is because when ultrasonic waves of 400 W or more are applied in ultrapure water, the efficiency of removing and cleaning organic substances is drastically improved.
【0027】更に、本発明において超音波洗浄は、周波
数900kHz 以上で、且つ強度400W以上の超音波で
5分以上行うことが好ましい。Further, in the present invention, it is preferable that the ultrasonic cleaning be performed with an ultrasonic wave having a frequency of 900 kHz or more and an intensity of 400 W or more for 5 minutes or more.
【0028】これは超音波洗浄を5分以上したときに洗
浄効率が急激に向上するからである。This is because the cleaning efficiency sharply increases when ultrasonic cleaning is performed for 5 minutes or more.
【0029】本発明において有機物を除去洗浄する半導
体ウエハとしては化合物半導体ウエハ、例えばGaAs
ウエハ若しくは半絶縁性GaAsであることが好まし
い。In the present invention, the semiconductor wafer for removing and cleaning organic substances is a compound semiconductor wafer, for example, GaAs.
Preferably, it is a wafer or semi-insulating GaAs.
【0030】[0030]
【発明の実施の形態】次に、本発明の半導体ウエハの有
機物除去洗浄方法の一実施例について説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, an embodiment of a method for removing and cleaning organic substances from a semiconductor wafer according to the present invention will be described.
【0031】(比較例1)まず、鏡面研磨した半絶縁性
GaAsウエハの乾燥完成品を硫酸系エッチャントに浸
漬処理することにより、その表面を2μm深さにエッチ
ングした。(Comparative Example 1) First, a dried and finished mirror-polished semi-insulating GaAs wafer was immersed in a sulfuric acid-based etchant to etch the surface to a depth of 2 μm.
【0032】次に、このエッチングした半絶縁性GaA
sウエハを超純水で洗浄し、それからスピン乾燥法によ
り乾燥することにより、鏡面研磨半絶縁性GaAsウエ
ハの完成品とした。Next, the etched semi-insulating GaAs
The s wafer was washed with ultrapure water and then dried by a spin drying method to obtain a mirror-polished semi-insulating GaAs wafer.
【0033】次に、この鏡面研磨半絶縁性GaAsウエ
ハの乾燥完成品の表面上にMOVPEエピタキシャル成
長法でアンドープA1X Ga1-X As(X=0.5)を
500nmの厚さに成長させることにより、半導体デバイ
スとした。Next, undoped A1 x Ga 1 -x As (X = 0.5) is grown to a thickness of 500 nm on the surface of the dried and finished mirror-polished semi-insulating GaAs wafer by MOVPE epitaxial growth. Thus, a semiconductor device was obtained.
【0034】次に、ここで得られた半導体デバイスの表
面に集光灯で光を当てて表面を詳細に観察したが、ヘイ
ズ不良は全く発見されなかった。Next, the surface of the semiconductor device obtained here was irradiated with light by a condensing lamp to observe the surface in detail, but no haze defect was found at all.
【0035】(比較例2)まず、鏡面研磨した半絶縁性
GaAsウエハを超音波が超純水槽の中へ15分浸漬す
ることにより、超純水洗浄を行った。Comparative Example 2 First, ultra-pure water cleaning was performed by immersing a mirror-polished semi-insulating GaAs wafer in an ultra-pure water bath for 15 minutes.
【0036】次に、この超純水洗浄を行った半絶縁性G
aAsウエハをスピン乾燥法により乾燥することによ
り、鏡面研磨半絶縁性GaAsウエハの完成品とした。Next, the semi-insulating G having been subjected to the ultrapure water cleaning is used.
The aAs wafer was dried by a spin drying method to obtain a mirror-polished semi-insulating GaAs wafer.
【0037】次に、この鏡面研磨半絶縁性GaAsウエ
ハの乾燥完成品の表面上にMOVPEエピタキシャル成
長法でアンドープA1X Ga1-X As(X=0.5)を
500nmの厚さに成長させることにより、半導体デバイ
スとした。Next, undoped A1 x Ga 1 -x As (X = 0.5) is grown to a thickness of 500 nm on the surface of the dried and finished mirror-polished semi-insulating GaAs wafer by MOVPE epitaxial growth. Thus, a semiconductor device was obtained.
【0038】次に、ここで得られた半導体デバイスの表
面に集光灯で光を当てて表面を詳細に観察したところ、
ヘイズ不良が発見された。Next, the surface of the obtained semiconductor device was observed in detail by irradiating light with a condensing lamp on the surface thereof.
Bad haze was found.
【0039】(実施例1)まず、鏡面研磨した半絶縁性
GaAsウエハを1MHz 、550Wの超音波が印加され
ている超純水槽の中へ15分浸漬することにより、超純
水洗浄を行った。(Example 1) First, a mirror-polished semi-insulating GaAs wafer was immersed in an ultrapure water tank to which ultrasonic waves of 1 MHz and 550 W were applied for 15 minutes to perform ultrapure water cleaning. .
【0040】次に、この超純水洗浄を行った半絶縁性G
aAsウエハをスピン乾燥法により乾燥することによ
り、鏡面研磨半絶縁性GaAsウエハの完成品とした。Next, the semi-insulating G having been subjected to the ultrapure water cleaning is used.
The aAs wafer was dried by a spin drying method to obtain a mirror-polished semi-insulating GaAs wafer.
【0041】次に、この鏡面研磨半絶縁性GaAsウエ
ハの乾燥完成品の表面上にMOVPEエピタキシャル成
長法でアンドープA1X Ga1-X As(X=0.5)を
500nmの厚さに成長させることにより、半導体デバイ
スとした。Next, undoped A1 x Ga 1 -x As (X = 0.5) is grown to a thickness of 500 nm on the surface of the dried mirror-polished semi-insulating GaAs wafer by MOVPE epitaxial growth. Thus, a semiconductor device was obtained.
【0042】次に、ここで得られた半導体デバイスの表
面に集光灯で光を当てて表面を詳細に観察したが、ヘイ
ズ不良は全く発見されなかった。Next, the surface of the semiconductor device obtained here was irradiated with light by a condensing lamp to observe the surface in detail, but no haze defect was found.
【0043】(試験結果)比較例1の半導体ウエハの有
機物除去洗浄方法では鏡面研磨半絶縁性GaAsウエハ
の完成品としたものをエッチング作業することから、生
産性の低下、製造コストの上昇を招いた。(Test Results) In the method of cleaning and removing organic substances from a semiconductor wafer of Comparative Example 1, a finished mirror-polished semi-insulating GaAs wafer is etched so that productivity is reduced and production costs are increased. Was.
【0044】また、比較例2の半導体ウエハの有機物除
去洗浄方法では半導体ウエハの有機物を完全に除去洗浄
することができなく、その結果ヘイズ不良が発見され
た。Further, in the method of cleaning and removing organic substances from a semiconductor wafer of Comparative Example 2, it was not possible to completely remove and clean the organic substances of the semiconductor wafer, and as a result, a haze defect was found.
【0045】これらに対して本発明の実施例1の半導体
ウエハの有機物除去洗浄方法では、高価な特殊エッチャ
ントを用いることなく有機物を完全に除去洗浄すること
ができ、それによって生産性の大幅な向上と製造コスト
の大幅な低減とを図ることができた。On the other hand, in the method of removing and cleaning an organic substance on a semiconductor wafer according to the first embodiment of the present invention, the organic substance can be completely removed and cleaned without using an expensive special etchant, thereby greatly improving the productivity. And a significant reduction in manufacturing cost.
【0046】[0046]
【発明の効果】本発明の半導体ウエハの有機物除去洗浄
方法によれば、高価な特殊エッチャントを用いることな
く有機物を完全に除去洗浄することができ、それによっ
て生産性の大幅な向上と製造コストの大幅な低減とを図
ることができるものであり、工業上有用である。According to the method of removing and cleaning an organic substance of a semiconductor wafer according to the present invention, an organic substance can be completely removed and cleaned without using an expensive special etchant, thereby greatly improving productivity and reducing manufacturing costs. It is possible to achieve a significant reduction and is industrially useful.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 大西 正哉 茨城県日立市日高町5丁目1番1号 日立 電線株式会社日高工場内 (72)発明者 小又 慎史 茨城県日立市日高町5丁目1番1号 日立 電線株式会社日高工場内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Masaya Onishi 5-1-1 Hidaka-cho, Hitachi City, Ibaraki Prefecture Inside the Hidaka Factory, Hitachi Cable Co., Ltd. (72) Inventor Shinfumi Komata Hidaka, Hitachi City, Ibaraki Prefecture 5-1-1, Hachimachi, Hidaka Factory, Hitachi Cable, Ltd.
Claims (6)
槽の中へ浸漬した後、該超純水へ超音波を印加しながら
前記鏡面研磨半導体ウエハの表面に付着している有機物
を除去洗浄することを特徴とする半導体ウエハの有機物
除去洗浄方法。1. A semiconductor wafer whose surface has been mirror-polished is immersed in an ultrapure water bath, and an organic substance adhering to the surface of the mirror-polished semiconductor wafer is removed and washed while applying ultrasonic waves to the ultrapure water. A method for removing organic substances from a semiconductor wafer.
であることを特徴とする請求項1記載の半導体ウエハの
有機物除去洗浄方法。2. The method according to claim 1, wherein the ultrasonic wave has a frequency of 900 kHz or more.
ることを特徴とする請求項1記載の半導体ウエハの有機
物除去洗浄方法。3. The method according to claim 1, wherein the ultrasonic wave has an intensity of 400 W or more.
且つ強度400W以上の超音波で5分以上行うことを特
徴とする請求項1記載の半導体ウエハの有機物除去洗浄
方法。4. The ultrasonic cleaning is performed at a frequency of 900 kHz or more.
2. The method for removing organic matter from a semiconductor wafer according to claim 1, wherein the cleaning is performed with an ultrasonic wave having an intensity of 400 W or more for 5 minutes or more.
ることを特徴とする請求項1記載の半導体ウエハの有機
物除去洗浄方法。5. The method according to claim 1, wherein the semiconductor wafer is a compound semiconductor wafer.
しくは半絶縁性GaAsであることを特徴とする請求項
5記載の半導体ウエハの有機物除去洗浄方法。6. The method according to claim 5, wherein the compound semiconductor wafer is a GaAs wafer or semi-insulating GaAs.
Priority Applications (1)
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JP2000211954A JP2002025957A (en) | 2000-07-07 | 2000-07-07 | Cleaning method for removing organic material of semiconductor wafer |
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JP2000211954A JP2002025957A (en) | 2000-07-07 | 2000-07-07 | Cleaning method for removing organic material of semiconductor wafer |
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JP2002025957A true JP2002025957A (en) | 2002-01-25 |
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KR101446721B1 (en) * | 2013-07-09 | 2014-10-06 | 주식회사 엘지실트론 | A method of mounting a wafer on a block for polishing process |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101446721B1 (en) * | 2013-07-09 | 2014-10-06 | 주식회사 엘지실트론 | A method of mounting a wafer on a block for polishing process |
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