JP2002020869A - Method for depositing diamondlike carbon film and surface treating method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for depositing a diamondlike carbon film in which the superthinning and wear resistance consist and high in reliability as a sliding face protective film for a thin film magnetic head slider. SOLUTION: At least one kind of gas selected from the gases of fluorine- carbon compounds CR4, CHF3, C2F6, C3F8 and C4F8 is mixed into methane or ethylene as a film deposition gaseous starting material and is used, further, while light with any wavelength in the region from far infrared radiation to ultraviolet radiation is applied on a substrate face, film deposition is performed by plasma CVD. Moreover, while light with any wavelength in the region from far infrared radiation to ultraviolet radiation is applied on the substrate face by plasma containing at least one kind of gas selected from the above fluorine- carbon compound gases, the surface of the diamondlike carbon film is treated. Alternatively, the surface of the diamondlike carbon film is treated by an ion beam containing the similar gas and gaseous argon.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for forming a diamond-like carbon film and a method for treating the surface of the formed diamond-like carbon film. In particular, the sliding surface (A) of a thin film magnetic head slider applied to a device for recording / reproducing on / from a magnetic recording medium such as a magnetic disk device (HDD).
The present invention relates to a method for forming a thin film suitable for forming a diamond-like carbon film on a (BS surface), and a surface treatment method for the diamond-like carbon film.

[0002]

2. Description of the Related Art In recent years, in a hard disk drive as an external recording device of a computer, a high recording density has been rapidly increased, and it is certain that this tendency will be further increased in the future.

In response to this requirement, the magnetic head slider is required to have a very low flying height of 0.05 μm or less and a stable flying characteristic which does not change with the peripheral speed of the recording medium. Further, in the future, since high electromagnetic conversion characteristics are required even at a high recording density, it is strongly required that the flying height be further reduced and the vehicle be driven stably.

[0004] Among them, the electromagnetic conversion characteristics greatly depend on the distance between the head and the recording medium, which is called magnetic spacing. This distance can be divided into the flying height and the thickness of the protective film formed on the sliding surface. Actual flying height is
Even if the thickness is 0.05 μm or less, the thickness of the protective film is further added to achieve magnetic spacing. Therefore, the thickness of the protective film has a great influence on the direct magnetic spacing. If a further reduction in the flying height is required, the protective film must be further thinned, so that it is required to simultaneously achieve the thinning and ensure abrasion resistance and corrosion resistance.

[0005] Incidentally, a protective film actually put to practical use is a diamond-like carbon film (DLC film). Examples of the formation method include a sputtering method, an ion plating method, a plasma CVD method, and electron cyclotron resonance (E).
CR) plasma CVD. In each case, the film thickness is 5
Used below nm. As the film configuration, a two-layer film provided with a silicon base for improving the adhesion is often used.

[0006] The sputtering method is a method in which a film is formed by directly sputtering a carbon-based target such as graphite. However, the hardness of the film is small and the wear resistance is not sufficient. Further, the ion plating method can obtain a film having high hardness, but there is a concern about productivity. Therefore, a film forming method using plasma is most used.

The present inventors have studied the formation of a thin film for forming a DLC film having an underlayer provided on a slider sliding surface of a thin film magnetic head by using an ECR plasma CVD method. In particular, the properties of the DLC film are greatly affected by the ECR plasma CVD film forming conditions. Therefore, the DLC with the largest hardness
The search and examination for obtaining a film were performed. As a result, when methane was used as the source gas, the hardness of the film was 23 GP.
a) When ethylene gas is used, a hardness of 30 GPa is obtained. Here, the hardness is determined by a method based on nanoindentation.

The present inventors have further focused on the relationship between the hardness of the film and the amount of hydrogen in the film. In a thin film forming method for forming a DLC film on a slider sliding surface of a thin film magnetic head by plasma CVD, when forming a mixture of carbon monoxide, carbon dioxide gas, or nitrogen oxide gas in a film forming material gas, To form a film while irradiating light of any wavelength from the far infrared to the ultraviolet region, and after forming an underlayer, adsorbing oxygen atoms to the surface of the underlayer, and then forming a DLC film. As a result, it has been found that the amount of hydrogen in the DLC film can be reduced, and as a result, the hardness of the film can be improved.

However, further lowering of the flying height is required in the future, and the chances of the slider sliding surface contacting the disk surface increase, and the contact start / stop (CSS)
In the case where the slider sliding surface often comes into contact with the disk surface, as in the case of the system, the formation of a hard film by the conventional method alone may cause destruction due to contact on the ABS surface or the disk surface. Increase. Although the mechanism of the destruction is extremely complicated and unclear, it is considered that the physical and chemical properties of the slider surface, the disk surface, and the lubricant layer are complicatedly involved.

As a means for solving these problems, a method of adding fluorine based gas such as CHF ₄ using plasma to make the DLC surface contain fluorine is described in, for example, JP-A-10-68083. ing.

[0011]

However, the ionization rate of plasma is generally low, and it is difficult to efficiently incorporate fluorine groups into the film surface and film even when a fluorine-based gas is introduced.

Further, the evaluation of the sliding characteristics actually obtained through friction with the disk is insufficient.

As described above, in order to obtain high reliability,
Increasing the hardness of the DLC film is a necessary condition for achieving both ultra-thinness and high abrasion resistance, but has a problem that it is not sufficient as a measure against destruction due to contact. Further, there is a problem that efficient treatment is not performed in surface modification.

An object of the present invention is to provide a method for forming a highly reliable DLC film having excellent wear resistance by solving the above-mentioned problems and achieving both ultra-thin DLC film and high wear resistance. Aim.

[0015]

Means for Solving the Problems In order to solve the above problems, the present inventors have studied a method of adding a fluorine atom to a DLC film or a surface thereof to reduce the dynamic friction coefficient. Then, in the film formation process, mixing of a gas containing fluorine into a source gas, and performing surface treatment with a gas containing fluorine were studied. As a result, they have found that the following means are extremely effective.

The method for forming a diamond-like carbon film according to the present invention is a method for forming a diamond-like carbon film by plasma CVD, wherein a fluorine-containing carbon compound CF ₄ , CHF ₃ , C ₂ F _At least one gas selected from the group consisting of ₆ , C ₃ F ₈ and C ₄ F ₈ is mixed, and a film is formed while irradiating the substrate surface with light of any wavelength from the far infrared to the ultraviolet range. It is characterized by the following. As the film forming material gas, at least one selected from hydrocarbon-based gases such as methane, ethylene, and acetylene can be used.

According to this method, the film is formed while irradiating light of any wavelength from the far infrared ray to the ultraviolet ray range, whereby the effect of increasing the reactivity by exciting the molecules of the source gas and the additive gas can be obtained. . Thereby, the fluorine group in the film and on the surface can be stabilized, and the fluorine group can be efficiently fixed in the film and on the film surface. As a result, the effect of reducing the dynamic friction coefficient is great.

Next, the surface treatment method for a diamond-like carbon film of the present invention is a method for treating the surface of a diamond-like carbon film formed on a substrate by plasma CVD, wherein the fluorocarbon compounds CF ₄ , CHF ₃ , C ₂ F ₆ , C ₃ F ₈ , and C
The plasma containing at least one gas selected from gases ₄ F _8, which comprises treating the surface while irradiating with light of any wavelength from the far infrared to the substrate surface to ultraviolet region.

According to this method, fluorine atoms are implanted into the surface of the DLC film, and the effect of reducing the dynamic friction coefficient can be obtained. In addition, the gas molecules are excited by the light irradiation, the reactivity is increased, and the effect that the fluorination of the surface of the DLC film further proceeds can be obtained. Further, if this method is used, the dynamic friction coefficient between the DLC film and the disk can be set, and the degree of freedom for various requirements such as improvement in wear resistance by lowering the flying height and reduction in the thickness of the DLC film is increased. Further, since the processing can be performed by the same apparatus as the film formation, the processing of the DLC film can be continuously performed, and thus, there is no need for new equipment.

Another method for treating the surface of a diamond-like carbon film of the present invention is a method for treating the surface of a diamond-like carbon film formed on a substrate, comprising an argon gas, a fluorocarbon compound CF ₄ , CHF ₃ , The surface is irradiated with an ion beam of a gas containing at least one selected from the group consisting of C ₂ F ₆ , C ₃ F ₈ , and C ₄ F ₈ .

According to this method, by irradiating the surface with an ion beam, fluorine groups are implanted into the surface of the DLC film, the hardness of the film is not changed much, the dynamic friction coefficient on the surface is reduced, and the surface of the film is reduced. Has the effect of controlling the depth at which fluorine groups are implanted into the substrate. Also,
As in the case of the above processing method, it is possible to set the dynamic friction coefficient between the DLC film and the disk.

The above method is particularly effective for forming a diamond-like carbon film on the slider sliding surface of a thin-film magnetic head.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The following embodiment is an example of film formation on a surface corresponding to a sliding surface of a thin film magnetic head slider.

(Embodiment 1) FIG. 9 is a schematic diagram of an ECR plasma CVD apparatus for performing the method of forming a diamond-like carbon film in Embodiment 1 of the present invention. The ECR plasma CVD apparatus 2 mainly includes a plasma chamber 7, a microwave oscillator 4 for generating ECR plasma, a magnet 6 for excitation, and a waveguide 5 for guiding microwaves to the plasma chamber 7. Substrate 1 on which thin film is formed
0 is held by the substrate holder 9 and the high-frequency power supply 3
Applies a substrate bias. 1 is a gas inlet, 8
Indicates a plasma generated in the plasma chamber 7.

In an example based on this embodiment, the substrate 1
0, a composite sintered body of alumina and titanium carbide (Al
A pin made of TiC) was used. The pin size is 4
mm, the length was 10 mm, the radius of curvature of the surface (sliding surface) in contact with the disk was 10 mm, and the surface roughness was 5 nm.

The film forming method is as follows. That is, in a sputtering chamber installed in the same apparatus, first, a silicon layer serving as a base layer was formed to a thickness of about 1.5 nm, and then the substrate was moved to the plasma chamber 7 in a vacuum. Next, the raw material gas is introduced from the gas inlet 1 and the plasma 8 is generated by the microwave oscillator.
Was generated. Then, a magnetic field was generated in the magnet 6, and the plasma of the raw material gas was drawn toward the substrate. At this time, a substrate bias was applied to the substrate holder 9 by the high frequency power supply 3.

The conditions for film formation in this embodiment are as follows: methane gas is used as a source gas, the gas pressure is 5 Pa, and the input power is 2
00W and high frequency bias power were 200W. DLC
And the total thickness of silicon was 5 nm. The characteristics of the DLC film are governed by the microwave power, the bias voltage, the pressure at the time of film formation, and the like. In the example, the film formation condition having the highest hardness was selected. The hardness of the DLC film at this time was 23 GPa when methane gas was used as a source gas.

Gases such as the fluorocarbon compounds CF ₄ , CHF ₃ , C ₂ F ₆ , C ₃ F ₈ , and C ₄ F ₈ used in the present embodiment were introduced into the plasma chamber 7 from the gas inlet 1. The amounts of these gases were controlled by the flow rate, and the effect was examined by changing the ratio to the flow rate of the methane gas as the raw material gas.

The light irradiation was performed by installing a light source (not shown) at a position where the substrate 10 was directly irradiated with light at a position where the plasma was less affected by the plasma in the plasma chamber 7. When it could not be installed in the plasma chamber 7, light irradiation was performed using a tube for guiding light. The light source for light irradiation has a wavelength of about 185 nm,
Three types of 30 nm and 1.1 μm were used.

FIG. 1 shows an example based on this embodiment, in which a gas of a fluorocarbon compound CF ₄ or CHF ₃ is
The measurement results of the dynamic friction coefficient of a film formed by being mixed with plasma of methane gas as a source gas are shown. The measuring method used the pin-on-disk method. The measurement was performed on a pin made of a composite sintered body of alumina and titanium carbide (AlTiC) coated with a 5 nm DLC film. The radius of curvature of the sliding surface after coating with the DLC film was 10 mm, and the surface roughness was about 4 nm. At the time of measurement, the dynamic friction coefficient was measured while rotating the disk for 30 passes at a rotation speed of 30 rpm. At this time, the load of the pin is 0.5
g and contacted the disk.

Since the absolute value of the coefficient of dynamic friction depends on the material, atmosphere, surface condition of the object to be measured, equipment, and the like, in the embodiment of the present invention, the DLC is applied to the sliding surface of the pin by the method of the present invention. A film is formed or a process after the film formation is performed, and the evaluation is performed by relative comparison of dynamic friction coefficients.

The gas amount is a ratio obtained by dividing the flow rate of the CF ₄ or CHF ₃ gas by the total amount of the mixed gas with the raw material gas methane gas. In the embodiment shown in FIG. 1, the gas amount was 4%. The wavelength of the light source for light irradiation used for film formation was 185 nm, and the output power was 15 mW.

FIG. 1 also shows measurement data of a DLC film having a hardness of 23 GPa formed as a conventional example using only methane gas.

As can be seen from FIG. 1, the dynamic friction coefficient of the DLC film increases with an increase in the number of rotations, but is stabilized at about 5 rotations. In the case of CF _4, the coefficient of kinetic friction at the number of rotations when stabilized was 0.18, and in the case of CHF ₃ , the coefficient of kinetic friction at the number of rotations when stabilized was 0.25. In the case of the conventional example without the mixed gas, the dynamic friction coefficient increases with the number of rotations, but is stabilized at 20 rotations. The coefficient of dynamic friction at the number of rotations at the time of stabilization was 0.6.

A comparison between the embodiment and the conventional example shows that, in the case of the embodiment, the dynamic friction coefficient can be reduced to about one third, and a stable sliding state is reached quickly.

As described above, in the present embodiment, the DLC film is formed by mixing the plasma of the methane gas, which is the raw material gas, with the gas of the fluorocarbon compound CF ₄ or CHF ₃ , so that the DLC film is formed. The coefficient of kinetic friction between the DLC film and the disk could be greatly reduced.

Here, in the embodiment of the present invention, a comparative study will be made using the value in a stabilized state as shown in the measurement results of FIG. 1 as the value of the dynamic friction coefficient.

FIGS. 2, 3, and 4 show the relationship between the dynamic friction coefficient and the gas amount as a result of the formation of the DLC film performed according to the first embodiment. CF ₄ , CHF ₃ , or C ₂
The DLC film was formed by changing the amount of the F ₆ gas, and the wavelength of the light applied to the substrate surface was changed. Figure 2 shows 185n
m, FIG. 3 shows the case of 430 nm, and FIG. 4 shows the case of 1.1 μm. The irradiation power was 15 mW.

FIG. 2 shows that the dynamic friction coefficient is greatly reduced by forming a film by mixing gases. Comparative examples are
In the case where CF ₄ is used as a mixed gas and light irradiation is not performed, there is a clear difference in reduction of the dynamic friction coefficient from the figure.
Irradiation with light can greatly reduce the dynamic friction coefficient. In the case of FIG. 3, the dynamic friction coefficient is smaller in each of the cases of FIG. 4 than in the case where no light is irradiated. Here, the gas used in the comparative example is CHF ₃ . In addition, the amount of gas which does not mix the fluorocarbon compound gas is 0.
This is greatly improved as compared with the conventional example.

In this embodiment, the wavelengths are about 185 nm and 430 nm.
Although three types of light irradiation of nm and 1.1 μm were performed, the difference in the effect depending on the wavelength of the light irradiation is considered as follows. That is, in the case of the shorter wavelengths of 185 nm and 430 nm in the wavelength from the far infrared to the ultraviolet region, the irradiation light has the effect of photo-exciting the gas molecules, while in the case of 1.1 μm, the substrate surface is thermally heated. Depending on the effect of the excitation, DLC
Fluorine groups are stably fixed in the film and on the surface.

The same effect as described above can be obtained when C ₃ F ₈ or C ₄ F ₈ gas is used. Further, the gas to be mixed is not limited to one kind, and a plurality of kinds may be appropriately used in combination. Further, gases for other purposes can be mixed together.

As described above, when a DLC film is formed by ECR plasma CVD using a film forming raw material gas in which a gas of a fluorocarbon compound is mixed, film formation is performed while irradiating light, thereby significantly increasing dynamic friction. The coefficient can be reduced. (Embodiment 2) FIG. 10 is a schematic view of a sputtering apparatus for performing the surface treatment method for a diamond-like carbon film in Embodiment 2. A target 12, a substrate holder 13, and a gas inlet 16 are provided in the sputtering chamber 11. The substrate holder 13 has a bias voltage power supply 1
5 is connected. A substrate 14 to be surface-treated coated with a DLC film is fixed to a substrate holder 13, transferred to the sputtering chamber 11, and evacuated to a high vacuum. After that, an argon gas is introduced from the gas inlet 16, and subsequently, the fluorocarbon compounds CF ₄ , CHF ₃ , C ₂ F ₆ ,
Either C ₃ F ₈ or C ₄ F ₈ gas is introduced. The gas amount mentioned below is the ratio of the fluorocarbon compound gas to the total gas amount of the fluorocarbon compound gas mixed with the argon gas.

Next, light is emitted from a light source (not shown) fixed inside the surface of the substrate 14. The light source was fixed at a position where the influence of the plasma was small and the surface of the substrate 14 was irradiated with light. After the start of the light irradiation, the bias voltage power supply 15 was turned on to discharge, and the DLC film on the surface of the substrate 14 was processed. Here, either a direct current or a high frequency alternating current can be used as the power source. The treatment was performed for a maximum of 30 seconds by changing the wavelength of light. At this time, the input power for plasma generation was 50 W, and the gas pressure was 3 mTorr.

FIG. 5 shows the results of measuring the dynamic friction coefficient of the DLC film surface-treated in the example based on the second embodiment. Each example is CF ₄ , CHF ₃ ,
This is a case in which C ₂ F ₆ , C ₃ F ₈ , and C ₄ F ₈ gases are mixed and used as a gas amount in a 3% argon gas. The wavelength of the light irradiation light source is 185 nm. The value of the dynamic friction coefficient is
The value obtained by the pin-on-disk method used in the first embodiment and the value in the stabilized state as shown in FIG. 1 was used. As a comparative example, a case was shown in which the treatment was performed without irradiation with light using CHF ₃ gas. FIG. 5 shows that the coefficient of kinetic friction can be reduced by irradiating light of 185 nm and performing the treatment, as compared with the comparative example. Similarly, FIG. 6 shows a case where light with a wavelength of 430 nm is irradiated, and FIG. 7 shows a case where light with a wavelength of 1.1 μm is irradiated. In the examples of FIGS. 6 and 7, the irradiating light significantly reduces the dynamic friction coefficient.

As described above, the fluorocarbon compound CF_Four,
CHF_Three, C_TwoF₆, C_ThreeF₈Or C _FourF₈Gas containing gas
Due to plasma, the surface of the DLC film is
Abrasion between the DLC film and the disk
Friction coefficient can be greatly reduced. Fluorocarbon
The compound gas is not limited to one type, but may be a combination of multiple types as appropriate.
May be used. Also contains gases for other purposes
It is also possible.

(Embodiment 3) In Embodiment 3, an ion beam is applied to a DLC film similar to the conventional example formed without using a mixed gas by using the ECR plasma CVD apparatus described in Embodiment 1. By doing so, the dynamic friction coefficient is reduced.

FIG. 11 is a schematic diagram of an ion beam processing apparatus for performing the surface treatment method for a diamond-like carbon film in the present embodiment. Ion beam processing room 1
7, an ion source 18, a substrate holder 19, and a gas inlet 21 are provided.

First, the substrate 20 to be surface-treated coated with the DLC film is fixed to the substrate holder 19, placed in the ion beam processing chamber 17, and evacuated to a high vacuum. After that, an argon gas is introduced from the gas inlet 21, and then the fluorocarbon compounds CF ₄ , CHF ₃ , C ₂
Any one of F ₆ , C ₃ F ₈ and C ₄ F ₈ gas
Introduce from 1. The gas amount mentioned below is the ratio of the fluorocarbon compound gas to the total gas amount of the fluorocarbon compound gas mixed with the argon gas. The ion beam was generated at 300 V and 400 mA.

FIG. 8 shows the results of measuring the dynamic friction coefficient of the surface-treated DLC film in the example based on the third embodiment. In each of the examples, the fluorocarbon compounds CF ₄ , CHF ₃ , C ₂ F ₆ , C ₃ F ₈ , and C ₄ F ₈ were respectively added to argon gas.
Shows the relationship between the dynamic friction coefficient and the amount of mixed gas when any one of the gases is mixed. The processing time was about 10 seconds.

If the processing time is too long, it affects the thickness of the DLC film, and also adversely affects the elements existing on the slider ABS surface such as deterioration. This is DL
There is a relationship with the film quality of C, and the optimum processing time may be determined according to each factor.

As shown in FIG. 8, D of the conventional example in which no processing is performed is performed.
By irradiating the surface of the LC film with an ion beam in which a gas of a fluorocarbon compound is mixed, the dynamic friction coefficient is significantly reduced.

As described above, when a DLC film is formed by ECR plasma CVD, any one of the fluorocarbon compounds CF ₄ , CHF ₃ , C ₂ F ₆ , C ₃ F ₈ , and C ₄ F ₈ is added to the argon gas. By performing the treatment with an ion beam containing a mixture of the above gases, the dynamic friction coefficient can be greatly reduced. The gas of the fluorocarbon compound is not limited to one type, and a plurality of types may be used in combination. It is also possible to include a gas for another purpose.

[0053]

According to the method for forming a DLC film of the present invention,
The effect of stabilizing the fluorine groups in the DLC film and on the surface reduces the dynamic friction coefficient. As a result, it is possible to achieve both ultra-thin DLC film and high wear resistance. Therefore, high reliability can be ensured in response to a demand for a higher density of the thin film magnetic head slider.

Further, according to the method for treating the surface of a DLC film of the present invention, the dynamic friction coefficient can be reduced in the same manner as described above. As a result, the dynamic friction coefficient between the DLC film and the disk can be set, and the flying height can be reduced. Abrasion resistance, DLC
The degree of freedom for various requirements such as thinning of the film thickness is expanded.
Furthermore, since processing can be performed with the same apparatus as for film formation, continuous DL
Since the processing of the C film can be performed, it is possible to suppress cost increase without necessity of a new facility.

[Brief description of the drawings]

FIG. 1 is a diagram showing the relationship between the dynamic friction coefficient of a diamond-like carbon film formed by the forming method according to the first embodiment and the number of disk rotations.

FIG. 2 is a diagram showing a relationship between a kinetic friction coefficient and a gas amount of a diamond-like carbon film formed by the forming method according to the first embodiment.

FIG. 3 is a diagram showing a relationship between a dynamic friction coefficient and a gas amount of a diamond-like carbon film formed by the forming method according to the first embodiment.

FIG. 4 is a diagram showing a relationship between a kinetic friction coefficient and a gas amount of a diamond-like carbon film formed by the forming method according to the first embodiment;

FIG. 5 is a diagram showing a relationship between a kinetic friction coefficient of a diamond-like carbon film treated by the surface treatment method according to the second embodiment and a plasma treatment time.

FIG. 6 is a diagram showing a relationship between a kinetic friction coefficient of a diamond-like carbon film treated by the surface treatment method according to the second embodiment and a plasma treatment time.

FIG. 7 is a diagram showing the relationship between the dynamic friction coefficient of a diamond-like carbon film treated by the surface treatment method according to the second embodiment and the plasma treatment time.

FIG. 8 is a diagram showing the relationship between the kinetic friction coefficient of a diamond-like carbon film treated by the surface treatment method according to the third embodiment and the ion beam treatment time.

FIG. 9 is a schematic diagram of an ECR plasma CVD apparatus used in the first embodiment.

FIG. 10 is a schematic diagram of a plasma processing apparatus used in a second embodiment.

FIG. 11 is a schematic diagram of an ion beam processing apparatus used in Embodiment 3;

[Explanation of symbols]

 1, 16, 21 Gas inlet 2 ECR plasma CVD apparatus 3 High frequency power supply 4 Microwave oscillator 5 Waveguide 6 Magnet 7 Plasma chamber 8 Plasma 9, 13, 19 Substrate holder 10, 14, 20 Substrate 11 Sputter chamber 12 Target 15 Bias voltage power supply 17 Ion beam processing chamber 18 Ion source

Continuation of front page (72) Inventor Tatsutoshi Suenaga 1006 Kazuma Kadoma, Kazuma, Osaka Prefecture F-term in Matsushita Electric Industrial Co., Ltd. 4G046 CA01 CB01 CB03 CB08 CC06 4K030 AA04 AA10 BA28 BB12 CA03 CA04 CA05 CA12 DA08 FA02 FA12 LA19 5D042 NA02 PA08 RA02 SA03

Claims (6)

[Claims] In a method of forming a diamond-like carbon film by plasma CVD, a fluorine-containing carbon compound CF ₄ , CHF ₃ , C ₂ F ₆ , C ₃ F ₈ and C
With mixing at least one gas selected from gases ₄ F _8, diamond-like carbon film, which is deposited while irradiating with light of any wavelength from the far infrared to the substrate surface to ultraviolet range Formation method. 2. The method for forming a diamond-like carbon film according to claim 1, wherein the film-forming raw material gas is at least one selected from hydrocarbon-based gases such as methane, ethylene, and acetylene. 3. A method for surface-treating a diamond-like carbon film formed on a substrate by plasma CVD, comprising the steps of: fluorinated carbon compounds CF ₄ , CHF ₃ , C ₂ F ₆ , C ₃ F ₈ , and C _3.
The plasma containing at least one gas selected from gases ₄ F _8, diamond-like, which comprises treating the surface while irradiating with light of any wavelength from the far infrared to the substrate surface to ultraviolet range Surface treatment method for carbon film. 4. A method for treating a surface of a diamond-like carbon film formed on a substrate, comprising the steps of: supplying an argon gas, a fluorocarbon compound CF ₄ , CHF ₃ , C ₂ F ₆ , C ₃ F ₈ , and C ₄ F ₈
Irradiating the surface with an ion beam of a gas containing at least one of the above gases. 5. The method for forming a diamond-like carbon film according to claim 1, wherein a diamond-like carbon film is formed on a slider sliding surface of the thin-film magnetic head. 6. The method according to claim 3, wherein the diamond-like carbon film formed on the slider sliding surface of the thin-film magnetic head is treated.