JP2002018342A - Method and device for applying treating liquid - Google Patents
Method and device for applying treating liquidInfo
- Publication number
- JP2002018342A JP2002018342A JP2000203726A JP2000203726A JP2002018342A JP 2002018342 A JP2002018342 A JP 2002018342A JP 2000203726 A JP2000203726 A JP 2000203726A JP 2000203726 A JP2000203726 A JP 2000203726A JP 2002018342 A JP2002018342 A JP 2002018342A
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- Prior art keywords
- processing
- processing liquid
- liquid
- rotations
- rotation speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウエハなど
の被処理体に対してレジスト液などの処理液を塗布する
方法及びそれに用いる装置に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a method for applying a processing liquid such as a resist liquid to an object to be processed such as a semiconductor wafer and an apparatus used for the method.
【０００２】[0002]
【従来の技術】半導体製造プロセスにおけるパターニン
グ工程においては、レジスト塗布工程が行われる。この
レジスト塗布工程においては、半導体ウエハなどの被処
理体を所定の回転数で回転させながら、被処理体表面上
に処理液であるレジスト液を滴下し（滴下工程）、その
後、滴下したレジスト液を被処理体表面に広げるととも
に、レジスト液膜の厚さを調整する（振切り工程）。2. Description of the Related Art In a patterning step in a semiconductor manufacturing process, a resist coating step is performed. In this resist coating step, while rotating the object to be processed such as a semiconductor wafer at a predetermined number of revolutions, a resist liquid as a processing liquid is dropped on the surface of the object to be processed (dropping step). Is spread over the surface of the object to be processed, and the thickness of the resist liquid film is adjusted (shake-off step).
【０００３】この場合、被処理体の回転数は、滴下工程
よりも振切り工程の方が大きくなるようになっている。
例えば、被処理体の回転数は、図３に示すように、滴下
工程で約２０００ｒｐｍであり、振切り工程で約３２０
０ｒｐｍである。[0003] In this case, the number of rotations of the object to be processed is set to be higher in the shake-off process than in the dropping process.
For example, as shown in FIG. 3, the number of rotations of the object to be processed is about 2000 rpm in the dropping step and about 320 rpm in the shaking-off step.
0 rpm.
【０００４】[0004]
【発明が解決しようとする課題】上記従来のレジスト塗
布方法においては、被処理体の表面上に均一な厚さの処
理液膜を形成するためには、比較的多くの処理液を被処
理体表面上に供給する必要がある。In the above-mentioned conventional resist coating method, a relatively large amount of processing liquid is applied to the processing object in order to form a processing liquid film having a uniform thickness on the surface of the processing object. Need to be supplied on the surface.
【０００５】本発明はかかる点に鑑みてなされたもので
あり、処理液の供給量を少なくし、しかも被処理体の表
面上に均一な厚さの処理液膜を形成することができる処
理液塗布方法及び装置を提供することを目的とする。The present invention has been made in view of the above points, and has been made in view of the above circumstances, and is capable of forming a processing liquid film having a uniform thickness on the surface of an object to be processed while reducing the supply amount of the processing liquid. An object of the present invention is to provide a coating method and an apparatus.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
に、本発明は以下の手段を講じた。Means for Solving the Problems In order to solve the above problems, the present invention has taken the following means.
【０００７】本発明は、被処理体表面上に処理液を塗布
する方法であって、前記被処理体を第１の回転数で回転
させながら、前記処理液を前記被処理体の表面上に所定
の供給レートで供給する工程と、前記被処理体を前記第
１の回転数より小さい第２の回転数で回転させながら、
前記処理液を前記被処理体の表面に広げて前記被処理体
の表面上に処理液膜を形成する工程と、を具備すること
を特徴とする処理液塗布方法を提供する。The present invention is a method of applying a processing liquid on a surface of a processing object, wherein the processing liquid is applied on the surface of the processing object while rotating the processing object at a first rotation speed. Supplying at a predetermined supply rate, and rotating the object at a second rotation speed lower than the first rotation speed,
Spreading the treatment liquid over the surface of the object to form a treatment liquid film on the surface of the object.
【０００８】この方法によれば、処理液を被処理体の表
面に広げながら被処理体の表面上に処理液膜を形成する
際の回転数を、処理液を被処理体の表面上に供給する際
の回転数より小さくなるようにしているので、処理液を
被処理体の表面上に供給したときに、比較的広い領域に
わたって被処理体の表面に処理液が供給される。したが
って、処理液を被処理体の表面に広げる際の回転数を小
さくしても被処理体の表面上に均一の厚さの処理液膜を
形成することができる。このように、被処理体への供給
の際の回転数を大きくして被処理体の表面の広い領域に
処理液を供給しておくことにより、処理液の供給量を少
なくすることが可能となる。According to this method, the number of rotations when forming the processing liquid film on the surface of the processing object while spreading the processing liquid on the surface of the processing object is determined by supplying the processing liquid onto the surface of the processing object. When the processing liquid is supplied onto the surface of the object to be processed, the processing liquid is supplied to the surface of the object over a relatively large area. Therefore, a processing liquid film having a uniform thickness can be formed on the surface of the processing object even if the number of rotations when spreading the processing liquid on the surface of the processing object is reduced. In this way, by increasing the number of revolutions when supplying the processing object and supplying the processing liquid to a wide area of the surface of the processing object, it is possible to reduce the supply amount of the processing liquid. Become.
【０００９】本発明の処理液塗布方法においては、前記
第１の回転数は、４０００ｒｐｍ〜６０００ｒｐｍであ
ることが好ましく、前記第１の回転数は、前記第２の回
転数の４／３倍〜２倍であることが好ましい。また、本
発明の処理液塗布方法においては、前記所定の供給レー
トは、０．５ｃｃ／ｓｅｃ〜２．５ｃｃ／ｓｅｃである
ことが好ましい。In the processing liquid coating method of the present invention, the first rotation speed is preferably 4000 rpm to 6000 rpm, and the first rotation speed is 4/3 times the second rotation speed. Preferably it is twice. Further, in the treatment liquid coating method of the present invention, it is preferable that the predetermined supply rate is 0.5 cc / sec to 2.5 cc / sec.
【００１０】また、本発明は、被処理体表面上に処理液
を塗布する装置であって、前記被処理体を載置する載置
手段と、前記被処理体と共に前記載置手段を回転させる
回転手段と、前記被処理体の表面上に前記処理液を供給
する供給手段と、前記載置手段を回転させる際の回転数
を制御する制御手段と、を具備し、前記制御手段は、前
記処理液を前記被処理体の表面に広げながら前記被処理
体の表面上に処理液膜を形成する際の回転数より前記処
理液を前記被処理体の表面上に供給する際の回転数が大
きくなるような制御を行うことを特徴とする処理液塗布
装置を提供する。The present invention is also an apparatus for applying a processing liquid on a surface of an object to be processed, wherein the mounting means for mounting the object to be processed and the mounting means are rotated together with the object to be processed. Rotating means, supply means for supplying the processing liquid on the surface of the object, and control means for controlling the number of rotations when rotating the mounting means, the control means, the control means, The number of rotations when supplying the processing liquid onto the surface of the object to be processed is larger than the number of rotations when forming a processing liquid film on the surface of the object to be processed while spreading the processing liquid on the surface of the object to be processed. Provided is a processing liquid application device that performs control to increase the size.
【００１１】この構成によれば、処理液を被処理体の表
面に広げながら被処理体の表面上に処理液膜を形成する
際の回転数を、処理液を被処理体の表面上に供給する際
の回転数より小さくなるように制御を行うので、処理液
を被処理体の表面上に供給したときに、比較的広い領域
にわたって被処理体の表面に処理液が供給される。した
がって、処理液を被処理体の表面に広げる際の回転数を
小さくしても被処理体の表面上に均一の厚さの処理液膜
を形成することができる。このように、被処理体への供
給の際の回転数を大きくして被処理体の表面の広い領域
に処理液を供給しておくことにより、処理液の供給量を
少なくすることが可能となる。According to this structure, the number of rotations when forming the processing liquid film on the surface of the processing object while spreading the processing liquid on the surface of the processing object is determined by supplying the processing liquid to the surface of the processing object. Since the control is performed so as to be lower than the number of rotations when the processing liquid is supplied, the processing liquid is supplied to the surface of the processing object over a relatively large area when the processing liquid is supplied onto the surface of the processing object. Therefore, a processing liquid film having a uniform thickness can be formed on the surface of the processing object even when the number of rotations when the processing liquid is spread on the surface of the processing object is reduced. As described above, by increasing the number of rotations when supplying the processing object and supplying the processing liquid to a wide area of the surface of the processing object, it is possible to reduce the supply amount of the processing liquid. Become.
【００１２】本発明の処理液塗布装置においては、前記
制御手段は、前記処理液を前記被処理体の表面上に滴下
する際の回転数が４０００ｒｐｍ〜６０００ｒｐｍとな
るような制御を行うことが好ましく、前記制御手段は、
前記処理液を前記被処理体の表面上に滴下する際の回転
数が前記処理液を前記被処理体の表面に広げながら前記
被処理体の表面上に処理液膜を形成する際の回転数の４
／３倍〜２倍となるような制御を行うことが好ましい。
また、本発明の処理液塗布装置においては、前記供給手
段は、０．５ｃｃ／ｓｅｃ〜２．５ｃｃ／ｓｅｃの供給
レートで前記処理液を前記被処理体の表面に供給するこ
とが好ましい。In the treatment liquid coating apparatus of the present invention, it is preferable that the control means performs control such that the number of rotations when the treatment liquid is dropped onto the surface of the object to be treated is 4000 rpm to 6000 rpm. , The control means comprises:
The number of revolutions when the treatment liquid is dropped on the surface of the object to be treated is the number of revolutions when forming the treatment liquid film on the surface of the object to be treated while spreading the treatment liquid on the surface of the object to be treated. Of 4
It is preferable to perform control so as to be / 3 times to 2 times.
Further, in the treatment liquid application apparatus according to the present invention, it is preferable that the supply unit supplies the treatment liquid to the surface of the workpiece at a supply rate of 0.5 cc / sec to 2.5 cc / sec.
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施の形態につい
て、添付図面を参照して詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.
【００１４】図１は、本発明の一実施の形態に係る処理
液塗布装置の概略構成を示す図である。なお、ここで
は、被処理体として半導体ウエハ（以下、ウエハと省略
する）を用い、処理液としてレジスト液を用いた場合に
ついて説明する。FIG. 1 is a diagram showing a schematic configuration of a processing liquid coating apparatus according to an embodiment of the present invention. Here, a case will be described in which a semiconductor wafer (hereinafter, abbreviated as a wafer) is used as an object to be processed and a resist liquid is used as a processing liquid.
【００１５】図中１は、上方が開口したカップ形状を有
する処理容器を示す。この処理容器１の底部中央には、
回転シャフト２が鉛直方向に貫挿されており、この回転
シャフト２の処理容器１側の先端には、支持部材７が取
り付けられている。また、回転シャフト２のもう一方の
先端側には、回転シャフト２の回転数を制御する回転制
御部４が接続されている。In FIG. 1, reference numeral 1 denotes a processing vessel having a cup shape with an open top. In the center of the bottom of the processing vessel 1,
The rotating shaft 2 is inserted vertically, and a support member 7 is attached to a tip of the rotating shaft 2 on the processing container 1 side. Further, a rotation control unit 4 that controls the number of rotations of the rotating shaft 2 is connected to the other end side of the rotating shaft 2.
【００１６】支持部材７上には、円盤状の載置台３がそ
の表面を水平にして取り付けられている。この載置台３
上には、ウエハＷが載置されている。例えば、このウエ
ハＷは、真空チャックなどにより載置台３上に吸着支持
される。On the support member 7, a disk-shaped mounting table 3 is mounted with its surface horizontal. This mounting table 3
A wafer W is placed on the top. For example, the wafer W is suction-supported on the mounting table 3 by a vacuum chuck or the like.
【００１７】載置台３の上方には、レジスト液をウエハ
Ｗの表面上に供給するノズル６が配置されている。この
ノズル６は、図示しないレジスト液収容タンクと配管を
介して接続されており、レジスト液は、レジスト液収容
タンクから配管を通じて圧送されて、ノズル６からウエ
ハＷの表面に滴下されるようになっている。A nozzle 6 for supplying a resist solution onto the surface of the wafer W is disposed above the mounting table 3. The nozzle 6 is connected to a resist liquid storage tank (not shown) via a pipe. The resist liquid is pumped from the resist liquid storage tank through the pipe, and is dropped from the nozzle 6 onto the surface of the wafer W. ing.
【００１８】制御部５は、回転制御部４及びノズル６に
電気的に接続されており、回転シャフトの回転数やレジ
スト液の供給レートの制御を行うようになっている。The control unit 5 is electrically connected to the rotation control unit 4 and the nozzle 6, and controls the rotation speed of the rotating shaft and the supply rate of the resist solution.
【００１９】次に、上記構成を有する処理液塗布装置の
動作について説明する。Next, the operation of the processing liquid coating apparatus having the above configuration will be described.
【００２０】まず、レジスト液を塗布するウエハＷを載
置台３上に載置した後に、回転制御部４により回転シャ
フト２を回転させる。このときの回転数は、通常の回転
数よりも大きい回転数に設定する。この回転数は、４０
００ｒｐｍ〜６０００ｒｐｍであることが好ましく、特
に好ましくは５０００ｒｐｍである。First, after the wafer W to be coated with the resist solution is mounted on the mounting table 3, the rotation control unit 4 rotates the rotating shaft 2. The rotation speed at this time is set to a rotation speed higher than the normal rotation speed. This rotation speed is 40
It is preferably from 00 rpm to 6000 rpm, and particularly preferably from 5000 rpm.
【００２１】次いで、回転した状態のウエハＷの表面に
レジスト液を供給（滴下）する。このときのレジスト液
の供給レートは、通常よりも高い供給レートに設定す
る。この供給レートは、０．５ｃｃ／ｓｅｃ〜２．５ｃ
ｃ／ｓｅｃであることが好ましく、特に好ましくは１．
５ｃｃ／ｓｅｃである。Next, a resist solution is supplied (dropped) onto the surface of the wafer W in a rotated state. At this time, the supply rate of the resist solution is set to a higher supply rate than usual. This supply rate is 0.5 cc / sec to 2.5 c
c / sec, particularly preferably 1.
5 cc / sec.
【００２２】このように、通常よりも大きい回転数で通
常よりも高い供給レートでレジスト液をウエハＷの表面
に供給すると、比較的広い領域にわたってウエハＷの表
面にレジスト液が供給されて広がる。As described above, when the resist liquid is supplied to the surface of the wafer W at a higher rotation speed than normal and at a higher supply rate than normal, the resist liquid is supplied to the surface of the wafer W and spreads over a relatively wide area.
【００２３】次いで、回転制御部４により回転シャフト
２の回転数を小さくしてレジスト液の振切りを行う。こ
の回転数は、この回転数の４／３倍〜２倍がレジスト液
供給の際の回転数になるように設定することが好まし
い。すなわち、この回転数は、レジスト液供給の際の回
転数の１／２倍〜３／４倍になるように設定することが
好ましい。Next, the rotation control unit 4 reduces the number of rotations of the rotating shaft 2 to shake off the resist solution. It is preferable that the number of revolutions is set so that 4/3 to 2 times the number of revolutions becomes the number of revolutions when the resist solution is supplied. That is, it is preferable that the number of rotations is set to be 倍 to ／ of the number of rotations when the resist solution is supplied.
【００２４】これにより、レジスト液をウエハＷ表面全
体に広げ、ウエハＷ表面上に所定の膜厚のレジスト液膜
を形成させる。この場合、レジスト液を供給する際に、
通常よりも大きい回転数で通常よりも高い供給レートで
比較的広い領域にわたってレジスト液をウエハＷの表面
に広げているので、レジスト液の振切りの際の回転数を
小さくしてもウエハＷの表面上に均一の厚さのレジスト
液膜を形成することができる。このように、レジスト液
のウエハＷへの供給の際の回転数を大きくしてウエハＷ
の表面の広い領域にレジスト液を供給しておくことによ
り、レジスト液の供給量を少なくすることが可能とな
る。As a result, the resist solution is spread over the entire surface of the wafer W, and a resist film having a predetermined thickness is formed on the surface of the wafer W. In this case, when supplying the resist solution,
Since the resist liquid is spread over the surface of the wafer W over a relatively wide area at a higher rotation speed than normal at a higher supply rate than normal, even if the rotation speed at the time of shaking off the resist liquid is reduced, the wafer W A resist liquid film having a uniform thickness can be formed on the surface. As described above, the rotational speed at the time of supplying the resist solution to the wafer W is increased, and the wafer W
By supplying the resist liquid to a wide area of the surface of the substrate, the supply amount of the resist liquid can be reduced.
【００２５】このような回転数の制御、すなわちレジス
ト液の供給の際の回転数を大きくし、レジスト液の振切
りの際の回転数を小さくする制御、及びレジスト液の供
給レートを高くする制御は、制御部５により行う。すな
わち、制御部５により回転数の制御は、図２に示すよう
に行う。Such control of the number of revolutions, that is, control to increase the number of revolutions at the time of supplying the resist solution and decrease the number of revolutions at the time of shaking off the resist solution, and control to increase the supply rate of the resist solution Is performed by the control unit 5. That is, the control of the rotation speed by the control unit 5 is performed as shown in FIG.
【００２６】次に、本発明の効果を明確にするために行
った実施例について説明する。Next, an embodiment performed to clarify the effect of the present invention will be described.
【００２７】（実施例）６インチウエハを載置台に載置
して回転数５０００ｒｐｍで載置台を回転させた。この
状態でレジスト液を０．６ｃｃ供給（滴下）した。この
とき、レジスト液の供給レートは、１．５ｃｃ／ｓｅｃ
であった。このレジスト液の供給工程は１〜２ｓｅｃで
あった。(Example) A 6-inch wafer was placed on a mounting table, and the mounting table was rotated at a rotation speed of 5000 rpm. In this state, 0.6 cc of the resist solution was supplied (dropped). At this time, the supply rate of the resist solution is 1.5 cc / sec.
Met. The step of supplying the resist solution was performed for 1 to 2 seconds.
【００２８】次いで、回転数を５０００ｒｐｍから３２
００±２００ｒｐｍに落として載置台を回転させてウエ
ハ表面上に供給されたレジスト液を全面に広げた。この
レジスト液の振切り工程は約２０ｓｅｃであった。この
ように、載置台の回転数を図２に示すように制御した。
その結果、０．６ｃｃの少量のレジスト液でウエハ表面
上に均一な膜厚のレジスト液膜が形成されたことが確認
された。Next, the number of rotations was increased from 5,000 rpm to 32.
The wafer was dropped to 00 ± 200 rpm and the mounting table was rotated to spread the resist solution supplied on the wafer surface over the entire surface. The resist solution shaking process was performed for about 20 seconds. Thus, the rotation speed of the mounting table was controlled as shown in FIG.
As a result, it was confirmed that a resist film having a uniform thickness was formed on the wafer surface with a small amount of the resist solution of 0.6 cc.
【００２９】（従来例）６インチウエハを載置台に載置
して回転数２０００ｒｐｍで載置台を回転させた。この
状態でレジスト液を１．６ｃｃ供給（滴下）した。この
とき、レジスト液の供給レートは、０．５ｃｃ／ｓｅｃ
であった。このレジスト液の供給工程は３ｓｅｃであっ
た。(Conventional Example) A 6-inch wafer was placed on a mounting table, and the mounting table was rotated at a rotation speed of 2000 rpm. In this state, 1.6 cc of the resist solution was supplied (dropped). At this time, the supply rate of the resist solution is 0.5 cc / sec.
Met. The step of supplying the resist solution was 3 seconds.
【００３０】次いで、回転数を２０００ｒｐｍから３４
００±２００ｒｐｍに上げて載置台を回転させてウエハ
表面上に供給されたレジスト液を全面に広げた。このレ
ジスト液の振切り工程は約２０ｓｅｃであった。このよ
うに、載置台の回転数を図３に示すように制御した。こ
の場合、ウエハ表面上に均一な膜厚のレジスト液膜を形
成するために１．６ｃｃのレジスト液が使用された。Next, the number of rotations was increased from 2000 rpm to 34.
The mounting table was rotated at a speed of 00 ± 200 rpm to spread the resist solution supplied on the wafer surface over the entire surface. The resist solution shaking process was performed for about 20 seconds. Thus, the rotation speed of the mounting table was controlled as shown in FIG. In this case, a 1.6 cc resist solution was used to form a resist film having a uniform thickness on the wafer surface.
【００３１】本発明は上記実施の形態に限定されず、種
々変更して実施することが可能である。例えば、上記実
施の形態においては、被処理体として半導体ウエハを用
いた場合について説明しているが、本発明は、被処理体
として半導体ウエハ以外のもの、例えばガラス基板など
を用いた場合にも適用することができる。また、上記実
施の形態においては、処理液としてレジスト液を用いた
場合について説明しているが、本発明は、処理液として
レジスト液以外のもの、例えば有機ＳＯＧ液、無機ＳＯ
Ｇ液などを用いた場合にも適用することができる。The present invention is not limited to the above embodiment, but can be implemented with various modifications. For example, in the above embodiment, the case where a semiconductor wafer is used as the object to be processed is described. However, the present invention is also applicable to a case where something other than a semiconductor wafer, such as a glass substrate, is used as the object to be processed. Can be applied. Further, in the above embodiment, the case where a resist liquid is used as the processing liquid has been described. However, the present invention provides a processing liquid other than the resist liquid, such as an organic SOG liquid or an inorganic SO
The present invention can be applied to the case where the G solution or the like is used.
【００３２】[0032]
【発明の効果】以上説明したように本発明においては、
処理液を被処理体の表面に広げながら被処理体の表面上
に処理液膜を形成する際の回転数を、処理液を被処理体
の表面上に供給する際の回転数より小さくなるようにす
るので、処理液を被処理体の表面上に供給したときに、
比較的広い領域にわたって被処理体の表面に処理液を供
給することができ、処理液の供給量を少なくし、しかも
被処理体の表面上に均一な厚さの処理液膜を形成するこ
とができる。As described above, in the present invention,
The number of rotations when forming the processing liquid film on the surface of the object to be processed while spreading the processing liquid on the surface of the object to be processed is set to be smaller than the number of rotations when supplying the processing liquid onto the surface of the object to be processed. Therefore, when the processing liquid is supplied onto the surface of the object to be processed,
The processing liquid can be supplied to the surface of the processing object over a relatively large area, and the supply amount of the processing liquid can be reduced, and a processing liquid film having a uniform thickness can be formed on the surface of the processing object. it can.
【図１】本発明の一実施の形態に係る処理液塗布装置の
概略構成を示す図である。FIG. 1 is a diagram showing a schematic configuration of a treatment liquid application device according to an embodiment of the present invention.
【図２】本発明の一実施の形態に係る処理液塗布方法に
おける時間と回転数との関係を示すグラフである。FIG. 2 is a graph showing a relationship between time and rotation speed in a treatment liquid application method according to one embodiment of the present invention.
【図３】従来の処理液塗布方法における時間と回転数と
の関係を示すグラフである。FIG. 3 is a graph showing a relationship between time and rotation speed in a conventional treatment liquid application method.
１…処理容器 ２…回転シャフト ３…載置台 ４…回転制御部 ５…制御部 ６…ノズル ７…支持部材 Ｗ…ウエハ DESCRIPTION OF SYMBOLS 1 ... Processing container 2 ... Rotary shaft 3 ... Mounting table 4 ... Rotation control part 5 ... Control part 6 ... Nozzle 7 ... Support member W ... Wafer
Claims (8)
であって、 前記被処理体を第１の回転数で回転させながら、前記処
理液を前記被処理体の表面上に所定の供給レートで供給
する工程と、 前記被処理体を前記第１の回転数より小さい第２の回転
数で回転させながら、前記処理液を前記被処理体の表面
に広げて前記被処理体の表面上に処理液膜を形成する工
程と、を具備することを特徴とする処理液塗布方法。1. A method of applying a processing liquid on a surface of a processing object, wherein the processing liquid is applied on a surface of the processing object while rotating the processing object at a first rotation speed. Supplying at a supply rate; and spreading the processing liquid on the surface of the processing object while rotating the processing object at a second rotation speed lower than the first rotation speed. Forming a processing liquid film thereon.
６０００ｒｐｍであることを特徴とする請求項１記載の
処理液塗布方法。2. The method according to claim 1, wherein the first rotation speed is from 4000 rpm.
2. The method according to claim 1, wherein the coating speed is 6,000 rpm.
の４／３倍〜２倍であることを特徴とする請求項１記載
の処理液塗布方法。3. The method according to claim 1, wherein the first rotation speed is 4/3 to 2 times the second rotation speed.
ｓｅｃ〜２．５ｃｃ／ｓｅｃであることを特徴とする請
求項１記載の処理液塗布方法。4. The predetermined supply rate is 0.5 cc /
The method according to claim 1, wherein the treatment time is from 2.5 cc / sec to 2.5 cc / sec.
であって、 前記被処理体を載置する載置手段と、 前記被処理体と共に前記載置手段を回転させる回転手段
と、 前記被処理体の表面上に前記処理液を供給する供給手段
と、 前記載置手段を回転させる際の回転数を制御する制御手
段と、を具備し、 前記制御手段は、前記処理液を前記被処理体の表面に広
げながら前記被処理体の表面上に処理液膜を形成する際
の回転数より前記処理液を前記被処理体の表面上に供給
する際の回転数が大きくなるような制御を行うことを特
徴とする処理液塗布装置。5. An apparatus for applying a processing liquid on a surface of a processing target, comprising: mounting means for mounting the processing target; rotating means for rotating the mounting means together with the processing target; A supply unit that supplies the processing liquid onto the surface of the processing target; and a control unit that controls the number of rotations when rotating the placing unit. As the number of rotations when supplying the processing liquid onto the surface of the object to be processed is larger than the number of rotations when forming the processing liquid film on the surface of the object to be processed while spreading on the surface of the object to be processed. A treatment liquid application device, which performs control.
理体の表面上に滴下する際の回転数が４０００ｒｐｍ〜
６０００ｒｐｍとなるような制御を行うことを特徴とす
る請求項５記載の処理液塗布装置。6. The control unit according to claim 1, wherein the number of rotations at which the processing liquid is dropped on the surface of the processing target is from 4000 rpm.
6. The processing liquid application apparatus according to claim 5, wherein the control is performed so as to be 6000 rpm.
理体の表面上に滴下する際の回転数が前記処理液を前記
被処理体の表面に広げながら前記被処理体の表面上に処
理液膜を形成する際の回転数の４／３倍〜２倍となるよ
うな制御を行うことを特徴とする請求項５記載の処理液
塗布装置。7. The processing unit according to claim 1, wherein the number of rotations at which the processing liquid is dropped on the surface of the processing object is set on the surface of the processing object while spreading the processing liquid on the surface of the processing object. 6. The processing liquid coating apparatus according to claim 5, wherein the control is performed such that the number of rotations when forming the processing liquid film is 4/3 to 2 times.
２．５ｃｃ／ｓｅｃの供給レートで前記処理液を前記被
処理体の表面に供給することを特徴とする請求項５記載
の処理液塗布装置。8. The method according to claim 1, wherein the supply means is set to 0.5 cc / sec.
6. The processing liquid application apparatus according to claim 5, wherein the processing liquid is supplied to the surface of the processing target at a supply rate of 2.5 cc / sec.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000203726A JP2002018342A (en) | 2000-07-05 | 2000-07-05 | Method and device for applying treating liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000203726A JP2002018342A (en) | 2000-07-05 | 2000-07-05 | Method and device for applying treating liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002018342A true JP2002018342A (en) | 2002-01-22 |
Family
ID=18701098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000203726A Withdrawn JP2002018342A (en) | 2000-07-05 | 2000-07-05 | Method and device for applying treating liquid |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002018342A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009056384A (en) * | 2007-08-31 | 2009-03-19 | Seiko Epson Corp | Liquid applying method |
-
2000
- 2000-07-05 JP JP2000203726A patent/JP2002018342A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009056384A (en) * | 2007-08-31 | 2009-03-19 | Seiko Epson Corp | Liquid applying method |
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