JP2002016015A5 - - Google Patents
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- JP2002016015A5 JP2002016015A5 JP2001127014A JP2001127014A JP2002016015A5 JP 2002016015 A5 JP2002016015 A5 JP 2002016015A5 JP 2001127014 A JP2001127014 A JP 2001127014A JP 2001127014 A JP2001127014 A JP 2001127014A JP 2002016015 A5 JP2002016015 A5 JP 2002016015A5
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- JP
- Japan
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001127014A JP5244274B2 (ja) | 2000-04-28 | 2001-04-25 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000130782 | 2000-04-28 | ||
JP2000-130782 | 2000-04-28 | ||
JP2000130782 | 2000-04-28 | ||
JP2001127014A JP5244274B2 (ja) | 2000-04-28 | 2001-04-25 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002016015A JP2002016015A (ja) | 2002-01-18 |
JP2002016015A5 true JP2002016015A5 (enrdf_load_stackoverflow) | 2008-05-08 |
JP5244274B2 JP5244274B2 (ja) | 2013-07-24 |
Family
ID=26591228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001127014A Expired - Lifetime JP5244274B2 (ja) | 2000-04-28 | 2001-04-25 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5244274B2 (enrdf_load_stackoverflow) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005045209A (ja) * | 2003-07-09 | 2005-02-17 | Mitsubishi Electric Corp | レーザアニール方法 |
JP4935059B2 (ja) * | 2005-02-17 | 2012-05-23 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP5094138B2 (ja) * | 2007-01-23 | 2012-12-12 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜の作製方法 |
JP2008211093A (ja) * | 2007-02-27 | 2008-09-11 | Sumitomo Heavy Ind Ltd | レーザアニール装置及びレーザアニール方法 |
JP4993292B2 (ja) * | 2007-07-18 | 2012-08-08 | カシオ計算機株式会社 | 表示パネル及びその製造方法 |
JP5236929B2 (ja) * | 2007-10-31 | 2013-07-17 | 富士フイルム株式会社 | レーザアニール方法 |
WO2011043217A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device including the same |
KR20110114089A (ko) * | 2010-04-12 | 2011-10-19 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 이의 제조 방법 및 이를 포함하는 표시 장치 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59202622A (ja) * | 1983-05-04 | 1984-11-16 | Hitachi Ltd | 単結晶薄膜の製造方法 |
JPS6354715A (ja) * | 1986-08-25 | 1988-03-09 | Seiko Instr & Electronics Ltd | 半導体薄膜のビ−ムアニ−ル方法 |
US4915772A (en) * | 1986-10-01 | 1990-04-10 | Corning Incorporated | Capping layer for recrystallization process |
JP3210313B2 (ja) * | 1989-08-11 | 2001-09-17 | ソニー株式会社 | 多結晶シリコン薄膜の特性改善方法 |
JPH10244392A (ja) * | 1997-03-04 | 1998-09-14 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
JP2000260731A (ja) * | 1999-03-10 | 2000-09-22 | Mitsubishi Electric Corp | レーザ熱処理方法、レーザ熱処理装置および半導体デバイス |
JP2000269133A (ja) * | 1999-03-16 | 2000-09-29 | Seiko Epson Corp | 薄膜半導体装置の製造方法 |
WO2002031871A1 (en) * | 2000-10-06 | 2002-04-18 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for producing polysilicon film, semiconductor device, and method of manufacture thereof |
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2001
- 2001-04-25 JP JP2001127014A patent/JP5244274B2/ja not_active Expired - Lifetime