JP2002009206A - Solid-state image sensing device, method for manufacturing the same, image reading unit, and image scanning apparatus - Google Patents
Solid-state image sensing device, method for manufacturing the same, image reading unit, and image scanning apparatusInfo
- Publication number
- JP2002009206A JP2002009206A JP2000190577A JP2000190577A JP2002009206A JP 2002009206 A JP2002009206 A JP 2002009206A JP 2000190577 A JP2000190577 A JP 2000190577A JP 2000190577 A JP2000190577 A JP 2000190577A JP 2002009206 A JP2002009206 A JP 2002009206A
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- Japan
- Prior art keywords
- solid
- imaging device
- adhesive
- state imaging
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000000853 adhesive Substances 0.000 claims abstract description 81
- 230000001070 adhesive effect Effects 0.000 claims abstract description 81
- 239000011521 glass Substances 0.000 claims abstract description 58
- 238000007789 sealing Methods 0.000 claims abstract description 32
- 238000003384 imaging method Methods 0.000 claims description 114
- 239000011347 resin Substances 0.000 claims description 37
- 229920005989 resin Polymers 0.000 claims description 37
- 239000000758 substrate Substances 0.000 abstract description 54
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000001723 curing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000012805 post-processing Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 235000007173 Abies balsamea Nutrition 0.000 description 2
- 239000004857 Balsam Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 244000018716 Impatiens biflora Species 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 102100032566 Carbonic anhydrase-related protein 10 Human genes 0.000 description 1
- 101000867836 Homo sapiens Carbonic anhydrase-related protein 10 Proteins 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10157—Shape being other than a cuboid at the active surface
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、固体撮像素子を用
いて光学像を読み取る画像読取装置等の固体撮像装置に
関し、例えば複写機、イメージスキャナ、ファクシミ
リ、デジタルカメラ、ビデオカメラ、胃カメラ等に応用
することができる半導体の実装技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device such as an image reading device for reading an optical image using a solid-state image pickup device, for example, a copying machine, an image scanner, a facsimile, a digital camera, a video camera, a stomach camera and the like. The present invention relates to a semiconductor mounting technology that can be applied.
【０００２】[0002]
【従来の技術】従来、一般に固体撮像装置の製造方法と
しては、ＣＣＤを代表とした固体撮像素子をセラミック
を絶縁基体としたパッケージ（以下セラミックパッケー
ジと称す）に搭載する方法が主流であった。2. Description of the Related Art Conventionally, as a method of manufacturing a solid-state imaging device, a method of mounting a solid-state imaging device represented by a CCD in a package using ceramic as an insulating substrate (hereinafter referred to as a ceramic package) has been mainly used.
【０００３】以下、従来の固体撮像装置について図面を
参照しながら説明する。図６は従来の固体撮像装置を示
す断面図である。Hereinafter, a conventional solid-state imaging device will be described with reference to the drawings. FIG. 6 is a sectional view showing a conventional solid-state imaging device.
【０００４】図６に示す従来の固体撮像装置は、外部に
電気信号を出力する端子群８０１を有したセラミックパ
ッケージ８０２の上面の凹部８０２ａに固体撮像素子８
０３を受光部を上にした状態で搭載され、セラミックパ
ッケージ８０２の上面の凹部８０２ａの内周辺の電極８
０４と固体撮像素子８０３表面の周辺に形成された電極
とが、ワイヤーボンディング法でアルミニウム（Ａｌ）
または金（Ａｕ）などの金属細線８０５によって電気的
に接続され、そして固体撮像素子８０３の保護を目的と
して、封止用の石英ガラス８０６でセラミックパッケー
ジ８０２の上部開口部分を蓋状に封止された構成となっ
ている。In the conventional solid-state image pickup device shown in FIG. 6, a solid-state image pickup device 8 is provided in a concave portion 802a on the upper surface of a ceramic package 802 having a terminal group 801 for outputting an electric signal to the outside.
03 is mounted with the light receiving portion facing up, and the electrodes 8 on the inner periphery of the concave portion 802a on the upper surface of the ceramic package 802 are mounted.
04 and an electrode formed around the surface of the solid-state imaging device 803 are made of aluminum (Al) by a wire bonding method.
Alternatively, they are electrically connected by a thin metal wire 805 such as gold (Au), and the upper opening of the ceramic package 802 is sealed in a lid shape with quartz glass 806 for sealing in order to protect the solid-state imaging device 803. Configuration.
【０００５】以上のように構成された従来の固体撮像装
置について以下、その動作について説明する。The operation of the conventional solid-state imaging device configured as described above will be described below.
【０００６】図６に示すように、被写体などを撮影した
場合の入射光８０７は、セラミックパッケージ８０２の
上面に設けられた封止用の石英ガラス８０６を通り、固
体撮像素子８０３に入射する。固体撮像素子８０３表面
の受光エリアには、品種によって異なるが、２０万〜４
０万個のフォトダイオードと呼ばれる受光部（図示せ
ず）が形成されている。また最近では、受光部自体が微
細になっている関係上、受光感度が低下しており、受光
感度を上げるために受光部上に樹脂によるマイクロレン
ズが形成されている。つまり入射光８０７は石英ガラス
８０６を通り、固体撮像素子８０２の受光エリア表面の
マイクロレンズで集光されてから受光部に入射し、電気
信号に変換されて、画像データとして処理される。As shown in FIG. 6, incident light 807 when a subject or the like is photographed passes through a quartz glass 806 for sealing provided on the upper surface of a ceramic package 802 and is incident on a solid-state image sensor 803. The light receiving area on the surface of the solid-state image sensor 803 varies from 200,000 to 4
Light receiving portions (not shown) called 100,000 photodiodes are formed. Recently, the light receiving sensitivity has been reduced due to the miniaturization of the light receiving section itself, and a microlens made of resin has been formed on the light receiving section to increase the light receiving sensitivity. That is, the incident light 807 passes through the quartz glass 806 and is condensed by the microlens on the surface of the light receiving area of the solid-state imaging device 802 before being incident on the light receiving unit, converted into an electric signal, and processed as image data.
【０００７】次に従来の固体撮像装置の製造方法につい
て、図面を参照しながら説明する。図７（Ａ）〜図７
（Ｃ）は従来の固体撮像装置の製造方法を示す断面図で
ある。Next, a conventional method for manufacturing a solid-state imaging device will be described with reference to the drawings. 7 (A) to 7
(C) is a cross-sectional view illustrating a method for manufacturing a conventional solid-state imaging device.
【０００８】図７（Ａ）〜図７（Ｃ）に示す従来の固体
撮像装置の製造方法は、外部に電気信号を出力する端子
群８０１を有したセラミックパッケージ８０２の上面の
凹部８０２ａに、固体撮像素子８０３を受光画を上にし
た状態で搭載する第１工程と、セラミックパッケージ８
０２の上面の凹部８０２ａの内周辺の電極８０４と固体
撮像素子８０３表面の周辺に形成された電極とを、ワイ
ヤーボンディング法にて金属細線８０５で電気的に接続
をする第２工程と、固体撮像素子３の保護を目的とし
て、封止用の石英ガラス８０６でセラミックパッケージ
８０２の上部開口部分を蓋状に封止する第３工程とで構
成されている。In the conventional method of manufacturing a solid-state imaging device shown in FIGS. 7A to 7C, a solid-state image pickup device is provided in a recess 802a on the upper surface of a ceramic package 802 having a terminal group 801 for outputting an electric signal to the outside. A first step of mounting the image sensor 803 with the light receiving image facing up, and a ceramic package 8
A second step of electrically connecting the electrode 804 on the inner periphery of the concave portion 802a on the upper surface of the substrate 02 and the electrode formed on the periphery of the surface of the solid-state imaging device 803 by a thin metal wire 805 by a wire bonding method; The third step is to seal the upper opening of the ceramic package 802 in a lid shape with quartz glass 806 for sealing for the purpose of protecting the element 3.
【０００９】以上のように構成された従来の固体撮像装
置の製造方法について、以下その動作について説明す
る。The operation of the conventional method of manufacturing the solid-state imaging device having the above-described configuration will be described below.
【００１０】まず、第１工程のダイスボンド工程につい
て、図７（Ａ）を参照して説明する。セラミックパッケ
ージ８０２の上面の凹部８０２ａに、固体撮像素子８０
３をその受光部を上にした状態でダイスボンダーと呼ば
れる装置により搭載する。固体撮像素子８０３とセラミ
ックパッケージ８０２とは、熱硬化性の銀ペーストなど
の導電性接着剤を用いて固定する。導電性接着剤の硬化
は１５０℃程度の温度で加熱して行う。First, the first die bonding step will be described with reference to FIG. The solid-state imaging device 80 is provided in the concave portion 802a on the upper surface of the ceramic package 802.
3 is mounted by a device called a die bonder with its light receiving portion facing upward. The solid-state imaging device 803 and the ceramic package 802 are fixed using a conductive adhesive such as a thermosetting silver paste. The conductive adhesive is cured by heating at a temperature of about 150 ° C.
【００１１】次に、第２工程のワイヤーボンド工程につ
いて、図７（Ｂ）を参照して説明する。ダイスボンド工
程後に、セラミックパッケージ８０２の上面の凹部８０
２ａの内周辺の電極８０４と固体撮像素子８０３表面の
周辺に形成された電極とを、ワイヤーボンダーにより、
金（Ａｕ）またはアルミニウム（Ａｌ）の金属細線８０
５で電気的に接続をする。なお、セラミックパッケージ
８０２の上面の凹部８０２ａの内周辺の電極８０４と、
セラミックパッケージ８０２の外部に電気信号を出力す
る端子群８０１とは対応している。Next, the second wire bonding step will be described with reference to FIG. After the die bonding step, the concave portion 80 on the upper surface of the ceramic package 802 is formed.
The electrode 804 on the inner periphery of 2a and the electrode formed on the periphery of the surface of the solid-state imaging device 803 are connected by a wire bonder.
Gold (Au) or aluminum (Al) metal wire 80
5 is electrically connected. In addition, an electrode 804 on the inner periphery of the concave portion 802a on the upper surface of the ceramic package 802,
It corresponds to a terminal group 801 that outputs an electric signal to the outside of the ceramic package 802.
【００１２】最後に、第３工程の封止工程について、図
７（Ｃ）を参照して説明する。ワイヤーボンド後に、固
体撮像素子８０３の外部からの保護を目的として、封止
用の石英ガラス８０６でセラミックパッケージ８０２の
上部開口部分を蓋状に封止し、固体撮像装置が実現す
る。石英ガラス８０６により蓋状に封止する場合には、
封止後の固体撮像素子８０３と石英ガラス８０６との空
間を、高い信頼性を維持するために、真空に保つ必要が
あるので、真空状態で封止を行う。封止には熱硬化性の
接着剤を使用し、それにより石英ガラス８０６とセラミ
ックパッケージ８０２とを接着させる。Finally, a third sealing step will be described with reference to FIG. After the wire bonding, the upper opening portion of the ceramic package 802 is sealed in a lid shape with quartz glass 806 for sealing for the purpose of protecting the solid-state imaging device 803 from the outside, and a solid-state imaging device is realized. When sealing in a lid shape with quartz glass 806,
Since the space between the solid-state imaging device 803 and the quartz glass 806 after sealing needs to be kept in a vacuum in order to maintain high reliability, the sealing is performed in a vacuum state. A thermosetting adhesive is used for sealing, and thereby the quartz glass 806 and the ceramic package 802 are bonded.
【００１３】[0013]
【発明が解決しようとする課題】上述のような従来の固
体撮像装置の構成では、固体撮像素子の電気的な接続方
法として、セラミックパッケージの電極と固体撮像素子
の電極とを金属細線で接続しているが、固体撮像素子の
周辺部にワイヤーを配線するための電極を形成する領域
が必要であり、固体撮像素子と封止用の石英ガラスとの
間に金属細線のループ形成に必要な間隙も設けなければ
ならない。このため、小型薄型軽量化が困難である。In the configuration of the conventional solid-state imaging device as described above, as an electric connection method of the solid-state imaging device, an electrode of the ceramic package and an electrode of the solid-state imaging device are connected by a thin metal wire. However, an area for forming an electrode for wiring a wire around the solid-state imaging device is required, and a gap required for forming a loop of a thin metal wire between the solid-state imaging device and the quartz glass for sealing is required. Must also be provided. For this reason, it is difficult to reduce the size, thickness, and weight.
【００１４】また、その製造において、これらを解決す
る方法として半導体素子の電極端子に突起を設けること
により、回路基板に直接フェースダウンで接合する、い
わゆるフリップチップ方法を応用して、固体撮像素子の
電極に突起を設け、ガラス基板に回路を形成し、固体撮
像素子をフェースダウンで接合するという方法が考えら
れる。In the manufacture thereof, as a method of solving these problems, a so-called flip-chip method in which a projection is provided on an electrode terminal of a semiconductor element to directly join the circuit board face-down, that is, a so-called flip-chip method is applied. A method is considered in which a projection is provided on an electrode, a circuit is formed on a glass substrate, and the solid-state imaging device is joined face-down.
【００１５】そこで、本発明は、固体撮像素子をガラス
基板にフェースダウンにて実装し、さらに固体撮像素子
とガラス基板とを固定して、固体撮像素子表面への水分
の到達を防止するために、固体撮像素子周辺部のみの封
止を行い、小型薄型軽量化した固体撮像装置、その製造
方法、読取ユニット及び画像走査装置を提供することを
目的とする。Accordingly, the present invention provides a method for mounting a solid-state imaging device face down on a glass substrate, and further fixing the solid-state imaging device and the glass substrate to prevent moisture from reaching the surface of the solid-state imaging device. It is another object of the present invention to provide a small, thin, and lightweight solid-state imaging device in which only a peripheral portion of a solid-state imaging device is sealed, a manufacturing method thereof, a reading unit, and an image scanning device.
【００１６】[0016]
【課題を解決するための手段】上記目的を達成するため
に請求項１の発明は、撮像素子がフェースダウンの状態
でガラス等の透明部材に設けられた配線パターンと対向
している固体撮像装置において、前記撮像素子と前記透
明部材との間に前記撮像素子の画素有効領域を被覆し薄
層化して充填されている透明な接着剤と、前記撮像素子
と前記透明部材の配線パターンとの間を導通するバンプ
とを備えていることを特徴とする固体撮像装置である。In order to achieve the above object, a first aspect of the present invention is a solid-state imaging device in which an imaging device faces a wiring pattern provided on a transparent member such as glass in a face-down state. In the above, between the imaging element and the transparent member, a transparent adhesive that covers and thins the pixel effective area of the imaging element and is filled, and between the imaging element and the wiring pattern of the transparent member And a bump that conducts through the solid-state imaging device.
【００１７】また、請求項２の発明は、請求項１に記載
の固体撮像装置において、前記撮像素子又は前記配線パ
ターンに設けられた前記バンプの高さが、薄層化された
接着剤の厚さと該接着剤から配線パターンまでの厚み方
向の距離との和よりも高いことを特徴としている。According to a second aspect of the present invention, in the solid-state imaging device according to the first aspect, the height of the bump provided on the imaging element or the wiring pattern is set to be equal to the thickness of the thinned adhesive. And a distance in the thickness direction from the adhesive to the wiring pattern.
【００１８】また、請求項３の発明は、請求項２に記載
の固体撮像装置において、前記接着剤の塗布量が、前記
撮像素子の画素有効領域と薄層化された接着剤厚みとの
積より多いことを特徴としている。According to a third aspect of the present invention, in the solid-state imaging device according to the second aspect, the amount of the adhesive applied is a product of a pixel effective area of the image sensor and a thinned adhesive thickness. It is characterized by more.
【００１９】また、請求項４の発明は、請求項２に記載
の固体撮像装置において、前記透明部材側の画像有効領
域部が凸形状に形成されていることを特徴としている。According to a fourth aspect of the present invention, in the solid-state imaging device according to the second aspect, the image effective area on the transparent member side is formed in a convex shape.
【００２０】まあ、請求項５の発明は、請求項１又は２
に記載の固体撮像装置において、前記接着剤とは異なる
封止用樹脂にてバンプ周囲も封止されていることを特徴
としている。The invention according to claim 5 is based on claim 1 or 2.
Wherein the periphery of the bump is also sealed with a sealing resin different from the adhesive.
【００２１】また、請求項６の発明は、請求項５に記載
の固体撮像装置において、前記封止用樹脂が不透明な樹
脂であることを特徴としている。According to a sixth aspect of the present invention, in the solid-state imaging device according to the fifth aspect, the sealing resin is an opaque resin.
【００２２】また、請求項７の発明は、請求項２に記載
の固体撮像装置において、前記撮像素子側の画像有効領
域部が凸形状に形成されていることを特徴としている。According to a seventh aspect of the present invention, in the solid-state imaging device according to the second aspect, the image effective area on the imaging element side is formed in a convex shape.
【００２３】また、請求項８の発明は、撮像素子がフェ
ースダウンの状態でガラス等の透明部材に設けられた配
線パターンと対向している固体撮像装置の製造方法にお
いて、前記透明部材と前記撮像素子との間に前記撮像素
子の画素有効領域を被覆できる量の透明な接着剤を充填
し、前記撮像素子と前記透明部材の配線パターンとがバ
ンプにより導通するように、前記撮像素子と前記透明部
材とを所定間隔まで接近させ、前記接着剤を薄層化して
前記画素領域を被覆した後、前記接着剤を硬化させるこ
とを特徴とする固体撮像装置の製造方法である。The invention according to claim 8 is a method of manufacturing a solid-state imaging device in which an imaging element faces a wiring pattern provided on a transparent member such as glass in a face-down state. An amount of transparent adhesive that can cover the pixel effective area of the imaging device is filled between the imaging device and the imaging device and the transparent member so that the imaging device and the wiring pattern of the transparent member are electrically connected by bumps. A method of manufacturing a solid-state imaging device, comprising: bringing a member close to a predetermined interval; thinning the adhesive to cover the pixel region; and curing the adhesive.
【００２４】また、請求項９の発明は、請求項８に記載
の固体撮像装置の製造方法において、前記接着剤を光硬
化させることを特徴としている。According to a ninth aspect of the present invention, in the method for manufacturing a solid-state imaging device according to the eighth aspect, the adhesive is photo-cured.
【００２５】また、請求項１０の発明は、請求項８又は
９に記載の固体撮像装置の製造方法において、前記接着
剤は硬化後に透明性を有することを特徴としている。According to a tenth aspect of the present invention, in the method for manufacturing a solid-state imaging device according to the eighth or ninth aspect, the adhesive has transparency after curing.
【００２６】また、請求項１１の発明は、請求項８〜１
０の何れかに記載の固体撮像装置の製造方法において、
前記接着剤は、前記所定間隔の容積より若干多い量を接
近前に予め塗布しておくことを特徴としている。Further, the invention of claim 11 is the invention of claims 8 to 1
0, the method for manufacturing a solid-state imaging device according to any one of
The adhesive is characterized in that an amount slightly larger than the volume of the predetermined interval is applied in advance before approaching.
【００２７】また、請求項１２の発明は、請求項８に記
載の固体撮像装置の製造方法において、前記撮像素子と
前記透明部材とを接近させる際に、接着剤が画素有効領
域に均一に分散するよう圧力をかけることを特徴として
いる。According to a twelfth aspect of the present invention, in the method for manufacturing a solid-state imaging device according to the eighth aspect, the adhesive is uniformly dispersed in the pixel effective area when the imaging element and the transparent member are brought close to each other. It is characterized by applying pressure.
【００２８】また、請求項１３の発明は、請求項８に記
載の固体撮像装置の製造方法において、導通状態となっ
たバンプを含めた画素有効領域の全周囲に封止用樹脂を
充填して硬化させることを特徴としている。According to a thirteenth aspect of the present invention, in the method for manufacturing a solid-state imaging device according to the eighth aspect, a sealing resin is filled all around the pixel effective area including the conductive bumps. It is characterized by being cured.
【００２９】また、請求項１４の発明は、請求項１３に
記載の固体撮像装置の製造方法において、前記封止用樹
脂は不透明であることを特徴としている。According to a fourteenth aspect of the present invention, in the method for manufacturing a solid-state imaging device according to the thirteenth aspect, the sealing resin is opaque.
【００３０】また、請求項１５の発明は、請求項１〜７
の何れかの固体撮像装置を用いた画像読取ユニットであ
る。Further, the invention of claim 15 provides the invention according to claims 1 to 7
An image reading unit using any one of the solid-state imaging devices.
【００３１】また、請求項１６の発明は、請求項１５の
画像読取ユニットを用いた画像走査装置である。According to a sixteenth aspect of the present invention, there is provided an image scanning apparatus using the image reading unit according to the fifteenth aspect.
【００３２】[0032]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して説明する。図１は本発明の第１実施形態の固
体撮像装置の製造方法を示す図である。図１（Ｃ）に示
すように、この固体撮像装置７は、ラインＣＣＤ、エリ
アＣＣＤ等の光情報を電気信号に変換する集積回路を備
え、固体撮像素子であるＣＣＤベアチップ７５と、ＣＣ
Ｄベアチップ７５の回路形成面に電気接続用の配線パタ
ーン７３が対向して配置される、即ちフェースダウン状
態で配置される透明部材であるガラス基板７１と、ＣＣ
Ｄベアチップ７５とガラス基板７１との間にＣＣＤベア
チップ７５の画素有効領域７５ａを被覆し薄層化して充
填されている透明な接着剤Ｓ１と、ＣＣＤベアチップ７
５とガラス基板７１の配線パターン７３との間を導通す
るバンプ７４とを備えている。なお、このバンプ７４は
本実施形態では、ＣＣＤベアチップ７５側に設けたが、
ガラス基板７１側に設けても良いのはもちろんである。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram illustrating a method for manufacturing the solid-state imaging device according to the first embodiment of the present invention. As shown in FIG. 1C, the solid-state imaging device 7 includes an integrated circuit for converting light information such as a line CCD and an area CCD into an electric signal.
A wiring board 73 for electrical connection is disposed facing the circuit forming surface of the D bare chip 75, that is, a glass substrate 71 which is a transparent member disposed in a face-down state;
A transparent adhesive S1 that covers the pixel effective area 75a of the CCD bare chip 75 and is filled in a thin layer between the D bear chip 75 and the glass substrate 71;
5 and a bump 74 that conducts between the wiring pattern 73 and the wiring pattern 73 of the glass substrate 71. In this embodiment, the bumps 74 are provided on the CCD bare chip 75 side.
Of course, it may be provided on the glass substrate 71 side.
【００３３】前記ＣＣＤベアチップ７５は、シリコンウ
エハに回路を形成し、必要な大きさに切り取ったもので
あり、実装されたときに画素部分の平面度が要求される
ので、要求される平面度に形成されている。また、この
ＣＣＤベアチップ７５は、外部雰囲気により埃、結露等
の悪影響を受けるので、外部雰囲気から遮断されている
必要がある。The CCD bare chip 75 is formed by forming a circuit on a silicon wafer and cutting it to a required size. When mounted, the flatness of the pixel portion is required. Is formed. Further, since the CCD bare chip 75 is adversely affected by dust, dew, and the like due to the external atmosphere, it is necessary to be shielded from the external atmosphere.
【００３４】前記ガラス基板７１は、ＣＣＤベアチップ
７５に対向する側、即ち電気接続用の配線パターン７３
側に高さＣの突起部７１ａが形成されている。この突起
部７１ＡはＣＣＤベアチップ７５の画素有効領域７５ａ
に対応するガラス基板側の画素有効領域を含むように形
成されている。即ち、ＣＣＤベアチップ７５の画素有効
領域７５ａに入射する光束を妨げない広さに形成されて
いる。The glass substrate 71 is provided on the side facing the CCD bare chip 75, that is, the wiring pattern 73 for electrical connection.
A protrusion C having a height C is formed on the side. The projecting portion 71A is a pixel effective area 75a of the CCD bare chip 75.
Is formed so as to include the pixel effective area on the glass substrate side corresponding to the above. That is, it is formed in a size that does not hinder the light beam incident on the pixel effective area 75a of the CCD bare chip 75.
【００３５】前記ガラス基板７１は、光透過率の高い部
材からなり、ＣＣＤベアチップ７５の画素と接触、固定
する部分の平面度は必要な平面度に形成されている。前
記ガラス基板７１はＣＣＤベアチップ７５を実装する側
の面に電気回路としての配線パターン７３が形成されて
いる。本実施形態では、透明部材としてガラス基板７１
を用いたが、ガラス基板以外にもレンズ用プラスチック
等の光透過率の高い部材から構成してもよい。The glass substrate 71 is made of a member having a high light transmittance, and the flatness of a portion of the CCD bare chip 75 which is in contact with and fixed to the pixel is formed to a required flatness. The glass substrate 71 has a wiring pattern 73 as an electric circuit formed on the surface on which the CCD bare chip 75 is mounted. In this embodiment, the glass substrate 71 is used as a transparent member.
Is used, but a member having high light transmittance such as plastic for a lens may be used instead of the glass substrate.
【００３６】前記バンプ７４はＣＣＤベアチップ７５と
ガラス基板７１の配線パターン７３との導通をとるため
の突起形状を有し、その高さＡは、薄層化された接着剤
Ｓ１の厚さＢと接着剤Ｓ１から配線パターン７３までの
厚み方向の距離、即ち突起部７１ａの高さＣとの和より
も高く形成されている。これにより、ＣＣＤベアチップ
７５とガラス基板７１の電気回路との間の導通を確実に
とることができ、かつ、ＣＣＤベアチップ７５の平面度
を保持することができる。The bump 74 has a projection shape for establishing conduction between the CCD bare chip 75 and the wiring pattern 73 of the glass substrate 71, and its height A is equal to the thickness B of the thinned adhesive S1. It is formed higher than the distance in the thickness direction from the adhesive S1 to the wiring pattern 73, that is, the sum of the height C of the protrusion 71a. Thus, conduction between the CCD bare chip 75 and the electric circuit of the glass substrate 71 can be ensured, and the flatness of the CCD bare chip 75 can be maintained.
【００３７】前記バンプ７４の周囲は、接着剤Ｓ１とは
異なる封止用樹脂Ｓ２により封止されている。したがっ
て、バンプ７４も封止された状態となる。前記封止用樹
脂Ｓ２は接着剤Ｓ１と同一のものを使用しても良い。こ
のように封止用樹脂Ｓ２は透明でも良いが、透明である
必要はなく、本実施形態では不透明な樹脂を用いてい
る。このように不透明な樹脂を用いることによりＣＣＤ
ベアチップ７５の画素有効領域７５ａに不要光が入射す
るのを防止できるので、画像品質が向上する。さらに、
高価な透明樹脂を用いる必要がないので、透明樹脂を用
いた場合と比べてコスト上有利である。この封止用樹脂
は、熱膨張率の低いものが望ましい。The periphery of the bump 74 is sealed with a sealing resin S2 different from the adhesive S1. Therefore, the bump 74 is also in a sealed state. The same resin as the adhesive S1 may be used as the sealing resin S2. As described above, the sealing resin S2 may be transparent, but need not be transparent, and an opaque resin is used in the present embodiment. By using such opaque resin, CCD
Since unnecessary light can be prevented from entering the pixel effective area 75a of the bare chip 75, image quality is improved. further,
Since it is not necessary to use an expensive transparent resin, it is more cost-effective than using a transparent resin. It is desirable that the sealing resin has a low coefficient of thermal expansion.
【００３８】前記接着剤Ｓ１はＣＣＤベアチップ７５を
固定するとともに、画素有効領域７５ａを封止してい
る。前記接着剤Ｓ１の塗布量は、ＣＣＤベアチップ７５
の画素有効領域７５ａと薄層化された接着剤層の厚みＢ
との積より多くする。これにより、画素有効領域全体が
透明接着剤で均一に被覆されるので、気泡の混入等を防
ぐことができ各画素の透明接着剤による影響が一定とな
る。The adhesive S1 fixes the CCD bare chip 75 and seals the pixel effective area 75a. The amount of the adhesive S1 applied is determined by the CCD bare chip 75.
Pixel effective area 75a and the thickness B of the thinned adhesive layer
To do more than the product of As a result, the entire pixel effective area is uniformly covered with the transparent adhesive, so that the inclusion of bubbles and the like can be prevented, and the effect of the transparent adhesive on each pixel becomes constant.
【００３９】前記接着剤Ｓ１は、本実施形態では紫外線
硬化型接着剤を用いているが、他の光硬化型接着剤でも
良く、また、硬化後に透明性を有するものであれば他の
接着剤でもよい。例えば、光学的特性の高い接着剤、例
えば、バルサム、エポキシ系樹脂、フッ素系樹脂、シリ
コン等を使用することができる。前記画素有効領域７５
ａとは、フォトセルアレイ（撮像素子の画像を読み取る
回路の部分）が設けられた撮像素子上の領域である。In the present embodiment, the adhesive S1 is an ultraviolet curable adhesive. However, other adhesives may be used as long as they have transparency after curing. May be. For example, an adhesive having high optical properties, for example, balsam, epoxy resin, fluorine resin, silicon, or the like can be used. The pixel effective area 75
“a” is an area on the image sensor where the photocell array (the part of the circuit for reading an image of the image sensor) is provided.
【００４０】以上のような固体撮像装置を製造するに
は、先ず、図１（Ａ）に示すように、ＣＣＤベアチップ
７５をフェースダウンの状態でガラス基板７１に設けら
れた配線パターン側の面と対向させ、ガラス基板７１の
突起部７１ａ上に所定量の接着剤Ｓ１を塗布する。この
接着剤Ｓ１の塗布量は、ＣＣＤベアチップ７５の画素有
効領域７５ａを被覆できる量である。即ち、ＣＣＤベア
チップ７５の画素有効領域７５ａ側の面とガラス基板７
１の突起部７１ａとの間の容積より若干多い量を接近前
に予め塗布しておく。この若干多い量とは、接着剤Ｓ１
がバンプ７４と配線パターン７３との接続部と、薄層化
された接着剤Ｓ１との間に空間Ｓができる程度の量であ
る。なお、図１（Ｃ）の一点鎖線に示すように、ガラス
基板７１の突起部７１ａとバンプ７４の導通部との間に
突起部７１ａの周囲を囲繞するように環状の溝を形成す
ることにより、この溝が接着剤溜まりとなり確実に空間
を形成することができる。In order to manufacture the solid-state imaging device as described above, first, as shown in FIG. 1A, the CCD bare chip 75 is placed face down on the wiring pattern side surface provided on the glass substrate 71. A predetermined amount of the adhesive S1 is applied to the projection 71a of the glass substrate 71 so as to face the same. The application amount of the adhesive S1 is an amount that can cover the pixel effective area 75a of the CCD bare chip 75. That is, the surface of the CCD bare chip 75 on the pixel effective area 75a side and the glass substrate 7
An amount slightly larger than the volume between the protrusions 71a is applied before approaching. This slightly larger amount means that the adhesive S1
Is such an amount that a space S is formed between the connection portion between the bump 74 and the wiring pattern 73 and the thinned adhesive S1. 1C, an annular groove is formed between the protrusion 71a of the glass substrate 71 and the conductive portion of the bump 74 so as to surround the periphery of the protrusion 71a. This groove becomes a reservoir for the adhesive, so that a space can be reliably formed.
【００４１】次に、図１（Ｂ）に示すように、ＣＣＤベ
アチップ７５とガラス基板７１の配線パターンとがバン
プ７４により導通するように、ＣＣＤベアチップ７５と
ガラス基板７１とを所定間隔まで接近させ、接着剤を薄
層化して画素領域を被覆する。ＣＣＤベアチップ７５と
ガラス基板７１とを接近させる際に、接着剤Ｓ１が画素
有効領域に均一に分散するよう圧力をかける。Next, as shown in FIG. 1 (B), the CCD bare chip 75 and the glass substrate 71 are brought close to a predetermined distance so that the CCD bare chip 75 and the wiring pattern of the glass substrate 71 are electrically connected by the bumps 74. Then, the pixel area is covered by thinning the adhesive. When the CCD bare chip 75 and the glass substrate 71 are brought close to each other, pressure is applied so that the adhesive S1 is uniformly dispersed in the pixel effective area.
【００４２】その後、図１（Ｃ）に示すように、接着剤
Ｓ１に紫外線を照射して硬化させる。更に、本実施形態
では、バンプ７４の外側、即ちガラス基板７１の外周寄
りを封止用樹脂Ｓ２で覆ってバンプ７４及びバンプ７４
の内側を封止する。即ち、導通状態となったバンプ７４
を含めた画素有効領域の全周囲に封止用樹脂Ｓ２を充填
して硬化させる。Thereafter, as shown in FIG. 1 (C), the adhesive S1 is cured by irradiating it with ultraviolet rays. Furthermore, in the present embodiment, the outside of the bump 74, that is, the outer periphery of the glass substrate 71 is covered with the sealing resin S2, and the bump 74 and the bump 74 are formed.
Seal the inside. That is, the bumps 74 in the conductive state
The sealing resin S2 is filled around the entire pixel effective area including the pixel effective region and cured.
【００４３】図３は図１の固体撮像装置の斜視図であ
り、以上のようにして、図３に示すような固体撮像装置
が作製される。なお、図３中、符号７７は配線パターン
に接続するＦＰＣ（フレキシブル配線板）であり、符号
Ｌは結像レンズからの入射光である。FIG. 3 is a perspective view of the solid-state imaging device shown in FIG. 1. The solid-state imaging device as shown in FIG. 3 is manufactured as described above. In FIG. 3, reference numeral 77 denotes an FPC (flexible wiring board) connected to the wiring pattern, and reference numeral L denotes incident light from the imaging lens.
【００４４】図２は本発明の第２実施形態の固体撮像装
置の製造方法を示す図である。図２（Ｃ）に示すよう
に、この固体撮像装置は、ラインＣＣＤ、エリアＣＣＤ
等の光情報を電気信号に変換する集積回路を備え、固体
撮像素子であるＣＣＤベアチップ７５と、ＣＣＤベアチ
ップ７５の回路形成面に電気接続用の配線パターン７３
が対向して配置される、即ちフェースダウン状態で配置
される透明部材であるガラス基板７１と、ＣＣＤベアチ
ップ７５とガラス基板７１との間にＣＣＤベアチップ７
５の画素有効領域７５ａを被覆し薄層化して充填されて
いる透明な接着剤Ｓ１と、ＣＣＤベアチップ７５とガラ
ス基板７１の配線パターン７３との間を導通するバンプ
７４とを備えている。なお、このバンプ７４は本実施形
態では、ＣＣＤベアチップ７５側に設けたが、ガラス基
板７１側に設けても良いのはもちろんである。FIG. 2 is a view showing a method of manufacturing a solid-state imaging device according to a second embodiment of the present invention. As shown in FIG. 2C, this solid-state imaging device includes a line CCD, an area CCD,
A CCD bear chip 75 which is a solid-state imaging device, and a wiring pattern 73 for electrical connection on a circuit forming surface of the CCD bear chip 75.
Are arranged opposite to each other, that is, a glass substrate 71 which is a transparent member arranged in a face-down state, and a CCD bare chip 7 between the CCD bare chip 75 and the glass substrate 71.
5 is provided with a transparent adhesive S1 that covers and thins the pixel effective area 75a, and a bump 74 that conducts between the CCD bare chip 75 and the wiring pattern 73 of the glass substrate 71. In this embodiment, the bumps 74 are provided on the CCD bare chip 75 side, but may be provided on the glass substrate 71 side.
【００４５】前記ＣＣＤベアチップ７５は、シリコンウ
エハに回路を形成し、必要な大きさに切り取ったもので
あり、実装されたときに画素部分の平面度が要求される
ので、要求される平面度に形成されている。また、この
ＣＣＤベアチップ７５は、外部雰囲気により埃、結露等
の悪影響を受けるので、外部雰囲気から遮断されている
必要がある。The CCD bare chip 75 is formed by forming a circuit on a silicon wafer and cutting it to a required size. When mounted, the flatness of the pixel portion is required. Is formed. Further, since the CCD bare chip 75 is adversely affected by dust, dew, and the like due to the external atmosphere, it is necessary to be shielded from the external atmosphere.
【００４６】前記ＣＣＤベアチップ７５は、ガラス基板
７１に対向する側、即ち画素有効領域７５ａ側に高さＣ
の突起部７５ｂが形成されている。この突起部７５ｂは
ＣＣＤベアチップ７５の画素有効領域７５ａを含むよう
に形成されている。前記ガラス基板７１は、光透過率の
高い部材からなり、ＣＣＤベアチップ７５の画素と接
触、固定する部分の平面度は必要な平面度に形成されて
いる。The CCD bare chip 75 has a height C on the side facing the glass substrate 71, that is, on the pixel effective area 75a side.
Are formed. The projection 75b is formed so as to include the pixel effective area 75a of the CCD bare chip 75. The glass substrate 71 is made of a material having a high light transmittance, and the flatness of a portion of the CCD bare chip 75 which is in contact with and fixed to the pixel is formed to a required flatness.
【００４７】前記ガラス基板７１はＣＣＤベアチップ７
５を実装する側の面に電気回路としての配線パターン７
３が形成されている。本実施形態では、透明部材として
ガラス基板７１を用いたが、ガラス基板７１以外にもレ
ンズ用プラスチック等の光透過率の高い部材から構成し
てもよい。The glass substrate 71 is a CCD bare chip 7
Wiring pattern 7 as an electric circuit on the surface on which
3 are formed. In the present embodiment, the glass substrate 71 is used as the transparent member. However, other than the glass substrate 71, a member having high light transmittance such as plastic for a lens may be used.
【００４８】前記バンプ７４はＣＣＤベアチップ７５と
ガラス基板７１の配線パターン７３との導通をとるため
の突起形状を有し、その高さＡは、薄層化された接着剤
Ｓ１の厚さＢと接着剤Ｓ１から配線パターン７３までの
厚み方向の距離、即ち突起部７１ａの高さＣとの和より
も高く形成されている。これにより、ＣＣＤベアチップ
７５とガラス基板７１の電気回路との間の導通を確実に
とることができ、かつ、ＣＣＤベアチップ７５の平面度
を保持することができる。The bump 74 has a projection shape for establishing conduction between the CCD bare chip 75 and the wiring pattern 73 of the glass substrate 71. The height A of the bump 74 is equal to the thickness B of the thinned adhesive S1. It is formed higher than the distance in the thickness direction from the adhesive S1 to the wiring pattern 73, that is, the sum of the height C of the protrusion 71a. Thus, conduction between the CCD bare chip 75 and the electric circuit of the glass substrate 71 can be ensured, and the flatness of the CCD bare chip 75 can be maintained.
【００４９】前記バンプ７４の周囲は、接着剤Ｓ１とは
異なる封止用樹脂Ｓ２により封止されている。したがっ
て、バンプ７４も封止された状態となる。前記封止用樹
脂Ｓ２は接着剤Ｓ１と同一のものを使用しても良い。こ
のように封止用樹脂Ｓ２は透明でも良いが、透明である
必要はなく、本実施形態では不透明な樹脂を用いてい
る。このように不透明な樹脂を用いることによりＣＣＤ
ベアチップ７５の画素有効領域７５ａに不要光が入射す
るのを防止できるので、画像品質が向上する。さらに、
高価な透明樹脂を用いる必要がないので、透明樹脂を用
いた場合と比べてコスト上有利である。この封止用樹脂
は、熱膨張率の低いものが望ましい。The periphery of the bump 74 is sealed with a sealing resin S2 different from the adhesive S1. Therefore, the bump 74 is also in a sealed state. The same resin as the adhesive S1 may be used as the sealing resin S2. As described above, the sealing resin S2 may be transparent, but need not be transparent, and an opaque resin is used in the present embodiment. By using such opaque resin, CCD
Since unnecessary light can be prevented from entering the pixel effective area 75a of the bare chip 75, image quality is improved. further,
Since it is not necessary to use an expensive transparent resin, it is more cost-effective than using a transparent resin. It is desirable that the sealing resin has a low coefficient of thermal expansion.
【００５０】前記接着剤Ｓ１はＣＣＤベアチップ７５を
固定するとともに、画素有効領域７５ａを封止してい
る。前記接着剤Ｓ１の塗布量は、ＣＣＤベアチップ７５
の画素有効領域７５ａと薄層化された接着剤層の厚みと
の積より多くすることによって、画素有効領域全体が透
明接着剤で均一に被覆されるので、気泡の混入等を防ぐ
ことができ各画素の透明接着剤による影響が一定とな
る。The adhesive S1 fixes the CCD bare chip 75 and seals the pixel effective area 75a. The amount of the adhesive S1 applied is determined by the CCD bare chip 75.
Since the pixel effective area 75a is more than the product of the thickness of the thinned adhesive layer and the entire pixel effective area is uniformly covered with the transparent adhesive, it is possible to prevent air bubbles from entering. The effect of the transparent adhesive on each pixel is constant.
【００５１】前記接着剤は、本実施形態では紫外線硬化
型接着剤を用いているが、他の光硬化型接着剤でも良
く、また、硬化後に透明性を有するものであれば他の接
着剤でもよい。例えば、光学的特性の高い接着剤、例え
ば、バルサム、エポキシ系樹脂、フッ素系樹脂、シリコ
ン等を使用することができる。前記画素有効領域７５ａ
とは、フォトセルアレイ（撮像素子の画像を読み取る回
路の部分）が設けられた撮像素子上の領域である。In the present embodiment, the adhesive is an ultraviolet-curable adhesive, but may be another light-curable adhesive or another adhesive as long as it has transparency after curing. Good. For example, an adhesive having high optical properties, for example, balsam, epoxy resin, fluorine resin, silicon, or the like can be used. The pixel effective area 75a
Is an area on the image sensor where the photocell array (the part of the circuit for reading an image of the image sensor) is provided.
【００５２】以上のような固体撮像装置を製造するに
は、先ず、図２（Ａ）に示すように、ＣＣＤベアチップ
７５をフェースダウンの状態でガラス基板７１に設けら
れた配線パターン７３側の面と対向させ、ガラス基板７
１上に所定量の接着剤Ｓ１を塗布する。この接着剤Ｓ１
の塗布量は、ＣＣＤベアチップ７５の画素有効領域７５
ａを被覆できる量である。即ち、ＣＣＤベアチップ７５
の画素有効領域７５ａを含む突起部７５ｂの面とガラス
基板７１の対応する部分との間の容積より若干多い量を
接近前に予め塗布しておく。この若干多い量とは、接着
剤Ｓ１がバンプ７４と配線パターン７３との接続部と、
薄層化された接着剤Ｓ１との間に空間Ｓができる程度の
量である。なお、図２（Ｃ）の一点鎖線に示すように、
ＣＣＤベアチップ７５の突起部７５ａに対応する部分と
バンプ７４の導通部との間に突起部７５ａに対応する部
分の周囲を囲繞するように環状の溝を形成することによ
り、この溝が接着剤溜まりとなり確実に空間を形成する
ことができる。In order to manufacture the solid-state imaging device as described above, first, as shown in FIG. 2A, the CCD bare chip 75 is placed face down on the surface on the side of the wiring pattern 73 provided on the glass substrate 71. And the glass substrate 7
A predetermined amount of the adhesive S1 is applied on the first adhesive. This adhesive S1
Is applied to the pixel effective area 75 of the CCD bare chip 75.
This is an amount that can cover a. That is, the CCD bare chip 75
An amount slightly larger than the volume between the surface of the projection 75b including the pixel effective area 75a and the corresponding portion of the glass substrate 71 is applied before approaching. This slightly larger amount means that the adhesive S1 is connected to the connection portion between the bump 74 and the wiring pattern 73,
The amount is such that a space S is formed between the adhesive S1 and the thinned adhesive S1. In addition, as shown by a dashed line in FIG.
An annular groove is formed between the portion corresponding to the protrusion 75a of the CCD bare chip 75 and the conductive portion of the bump 74 so as to surround the portion corresponding to the protrusion 75a. And a space can be reliably formed.
【００５３】次に、図２（Ｂ）に示すように、ＣＣＤベ
アチップ７５とガラス基板７１の配線パターン７３とが
バンプ７４により導通するように、ＣＣＤベアチップ７
５とガラス基板７１とを所定間隔まで接近させ、接着剤
Ｓ１を薄層化して画素領域を被覆する。ＣＣＤベアチッ
プ７５とガラス基板７１とを接近させる際に、接着剤Ｓ
１が画素有効領域に均一に分散するよう圧力をかける。Next, as shown in FIG. 2 (B), the CCD bare chip 7 is connected to the wiring pattern 73 of the glass substrate 71 by the bump 74 so that the CCD bare chip 75 is electrically connected to the wiring pattern 73 of the glass substrate 71.
5 and the glass substrate 71 are brought close to a predetermined distance, and the adhesive S1 is thinned to cover the pixel area. When bringing the CCD bare chip 75 and the glass substrate 71 closer together, the adhesive S
Pressure is applied so that 1 is evenly distributed in the pixel effective area.
【００５４】その後、図２（Ｃ）に示すように、接着剤
Ｓ１に紫外線を照射して硬化させる。更に、バンプ７４
の外側、即ちガラス基板７１の外周寄りを封止用樹脂Ｓ
２で覆ってバンプ７４及びバンプ７４の内側を封止す
る。即ち、導通状態となったバンプ７４を含めた画素有
効領域７５ａの全周囲に封止用樹脂Ｓ２を充填して硬化
させる。Thereafter, as shown in FIG. 2C, the adhesive S1 is cured by irradiating it with ultraviolet rays. Further, the bump 74
Of the glass substrate 71, that is, the sealing resin S
2 to seal the bump 74 and the inside of the bump 74. That is, the entirety of the pixel effective area 75a including the conductive bumps 74 is filled with the sealing resin S2 and cured.
【００５５】図４は本発明の固体撮像装置を用いた画像
読取ユニットの斜視図である。図４に示すように、画像
読取ユニット１は、原稿面からの画像光としての光線が
透過する透過面の周囲に側面であるコバ面３ａを有す
る、光学エレメントであるレンズ３と、コバ面３ａに対
向する第１の取付面５ａと第１の取付面５ａとは異なる
角度、本実施形態では第１の取付面５ａに対して９０度
に形成されている第２の取付面５ｂとを有し、レンズ３
と筐体２とを接合する中間保持部材５と、第２の取付面
５ｂに対向する取付面２ｃを有するベース部材である筐
体２とを備えている。この画像読取ユニット１では、筐
体２と筐体２に対して位置調整されたレンズ３とが中間
保持部材５を介して接着固定されている。FIG. 4 is a perspective view of an image reading unit using the solid-state imaging device of the present invention. As shown in FIG. 4, the image reading unit 1 includes a lens 3 as an optical element, which has an edge surface 3a which is a side surface around a transmission surface through which light rays as image light from a document surface pass, and an edge surface 3a. The first mounting surface 5a and the first mounting surface 5a facing each other have a different angle, and in the present embodiment, a second mounting surface 5b formed at 90 degrees with respect to the first mounting surface 5a. And lens 3
An intermediate holding member 5 that joins the housing 2 with the housing 2 and a housing 2 that is a base member having a mounting surface 2c facing the second mounting surface 5b are provided. In the image reading unit 1, the housing 2 and the lens 3 whose position is adjusted with respect to the housing 2 are bonded and fixed via the intermediate holding member 5.
【００５６】前記レンズ３は、そのコバ面３ａに同一直
径上に配置される平坦面３ｂを備えている。この平坦面
３ｂは切削、研削等により形成され、必要に応じて研磨
されている。このように平坦面３ｂを形成することによ
り、中間保持部材５の第１取付面５ａとの接着面積を拡
大することができ、固定強度を高めることができる。The lens 3 has a flat surface 3b disposed on the edge surface 3a on the same diameter. The flat surface 3b is formed by cutting, grinding, or the like, and is polished as necessary. By forming the flat surface 3b in this manner, the bonding area of the intermediate holding member 5 with the first mounting surface 5a can be increased, and the fixing strength can be increased.
【００５７】前記筐体２は、レンズ３と固体撮像装置７
とを調整後に調整された配置関係で固定する。この筐体
２は、円弧状溝部２ｂと、円弧状溝部２ｂに隣接する平
面状の取付面２ｃと、固体撮像装置７を取り付ける取付
面２ｄと、レンズ３，６等から構成される結像レンズ系
と固体撮像装置７との間を遮光する遮光用カバー２ａと
を備えている。この遮光用カバー２ａを設けることによ
って、外乱光等の影響を防ぐことができ良好な画像を得
られる。この筐体２は後述する複写機等の画像走査装置
の所定位置にねじ締め、カシメ、接着、溶着等の固定手
段により固定される。The housing 2 includes a lens 3 and a solid-state imaging device 7.
Are fixed in the adjusted positional relationship after the adjustment. The housing 2 is an imaging lens including an arc-shaped groove 2b, a flat mounting surface 2c adjacent to the arc-shaped groove 2b, a mounting surface 2d for mounting the solid-state imaging device 7, and lenses 3, 6, and the like. A light-shielding cover 2a that shields light between the system and the solid-state imaging device 7 is provided. By providing the light-shielding cover 2a, the influence of disturbance light or the like can be prevented, and a good image can be obtained. The housing 2 is fixed to a predetermined position of an image scanning device such as a copying machine to be described later by fixing means such as screwing, caulking, bonding, welding, or the like.
【００５８】前記中間保持部材５に用いる材質は、光
（紫外線）透過率の高い部材、例えば、アートン、ゼオ
ネックス、ポリカーボネイト等が用いられる。前記中間
保持部材５は接着剤の表面張力により、レンズ調整によ
るレンズ位置の移動に対して、両接着面がすべるように
して動き、レンズ３の移動に追従することができる。As the material used for the intermediate holding member 5, a member having high light (ultraviolet) transmittance, for example, ARTON, ZEONEX, polycarbonate or the like is used. Due to the surface tension of the adhesive, the intermediate holding member 5 can move so that both adhesive surfaces slide and move following the movement of the lens 3 due to the lens position adjustment by the lens adjustment.
【００５９】前記中間保持部材５の第１取付面５ａ及び
第２取付面５ｂ、即ち両接着面を直交させることによっ
て、レンズ３の位置調整が６軸可能となり各軸が独立し
て調整することができる。By making the first mounting surface 5a and the second mounting surface 5b of the intermediate holding member 5 perpendicular to each other, ie, the two bonding surfaces, the position of the lens 3 can be adjusted in six axes, and each axis can be adjusted independently. Can be.
【００６０】図４に示すように、２個の中間保持部材５
を用いて光学エレメント側接着面であるレンズ３のコバ
３ａの平坦面３ｂが対向するように配置することによっ
て、接着剤が硬化するときの硬化収縮による影響を少な
くすることができる。As shown in FIG. 4, two intermediate holding members 5
By arranging the flat surface 3b of the edge 3a of the lens 3 which is the optical element side bonding surface so as to face the optical element side, the influence of curing shrinkage when the adhesive is cured can be reduced.
【００６１】図４に示すように、中間保持部材５の両接
着面間に透光性のリブ５ｃを設けることによって、光硬
化型接着剤を硬化させるときの光のロスを増加すること
なく、中間保持部材５の強度を高めることができる。As shown in FIG. 4, by providing the translucent ribs 5c between the two adhesive surfaces of the intermediate holding member 5, the loss of light at the time of curing the photo-curing adhesive can be increased. The strength of the intermediate holding member 5 can be increased.
【００６２】前記中間保持部材５のレンズ側固定面であ
る第１取付面５ａと保持部材側固定面である第２取付面
５ｂとは互いに垂直であるので、レンズのＸ、Ｙ、Ｚ、
α、β、γ各位置調整方向への移動に対して互いに独立
して調整することができる。Since the first mounting surface 5a, which is the lens-side fixing surface of the intermediate holding member 5, and the second mounting surface 5b, which is the holding member-side fixing surface, are perpendicular to each other, the X, Y, Z,
The movement in the α, β, and γ position adjustment directions can be adjusted independently of each other.
【００６３】中間保持部材５が紫外線硬化型の接着剤に
よって調整レンズ３と筐体２とに接続されている場合に
ついて考えてみると、まずＸ、Ｚ方向の調整の場合、レ
ンズ３と中間保持部材５とが筐体２の保持部材側固定面
である筐体取付面２ｃを介して筐体上をすべる動きをし
て調整される。また、Ｙ方向の調整の場合、移動レンズ
３が中間保持部材５のレンズ側固定面である第１取付面
５ａをすべる動きをして調整される。Consider the case where the intermediate holding member 5 is connected to the adjustment lens 3 and the housing 2 by an ultraviolet curing adhesive. First, in the case of adjustment in the X and Z directions, the lens 3 and the intermediate holding member are connected. The member 5 is adjusted by sliding on the housing via the housing mounting surface 2c, which is a holding member-side fixing surface of the housing 2. In the case of adjustment in the Y direction, the adjustment is performed by the moving lens 3 sliding on the first mounting surface 5a, which is the lens-side fixing surface of the intermediate holding member 5.
【００６４】以下α、β、γも同様にして調整される。
さらに、光学エレメントがレンズの場合光軸を中心とし
た球面形状をしているため、光軸（γ軸）周りに回転さ
せてもレンズの加工誤差等で発生した光軸倒れを補正す
ることはできない（光軸が回転するのみ）。したがって
γ軸周りの調整は不要となる。Hereinafter, α, β, and γ are similarly adjusted.
Furthermore, when the optical element is a lens, it has a spherical shape with the optical axis as the center. Therefore, even if the optical element is rotated around the optical axis (γ axis), it is not possible to correct the optical axis tilt caused by a lens processing error or the like. No (only the optical axis rotates). Therefore, adjustment around the γ-axis is unnecessary.
【００６５】図５は本発明の固体撮像装置を用いた画像
読取ユニットを備えた画像走査装置の一例として多機能
型デジタル画像形成装置の概略構成図である。図５に示
すように、この画像形成装置は、自動原稿送り装置１０
１、読み取りユニット１５０、書込ユニット１５７、給
紙ユニット１３０及び後処理ユニット１４０とを備えて
構成されている。自動原稿送り装置１０１は、原稿を読
取ユニット１５０のコンタクトガラス１０６上に自動的
に給送し、読み取りが終了した原稿を自動的に排出す
る。読み取りユニット１５０はコンタクトガラス１０６
上にセットされた原稿を照明して光電変換装置であるＣ
ＣＤ１５４によって読み取り、書込ユニット１５７は読
み取られた原稿の画像信号に応じて感光体１１５上に画
像を形成し、給紙ユニット１３０から給紙された転写紙
上に画像を転写して定着する。定着が完了した転写紙は
後処理ユニット１４０に排紙され、ソートやステープル
などの所望の後処理が行われる。FIG. 5 is a schematic configuration diagram of a multi-function digital image forming apparatus as an example of an image scanning apparatus having an image reading unit using the solid-state imaging device of the present invention. As shown in FIG. 5, the image forming apparatus includes an automatic document feeder 10
1, a reading unit 150, a writing unit 157, a sheet feeding unit 130, and a post-processing unit 140. The automatic document feeder 101 automatically feeds a document onto the contact glass 106 of the reading unit 150 and automatically discharges the document that has been read. The reading unit 150 is a contact glass 106
Illuminates the original set on the top and illuminates the photoelectric conversion device C
The reading unit 157 forms an image on the photoconductor 115 in accordance with the image signal of the read original, and transfers and fixes the image on the transfer paper supplied from the paper supply unit 130. The transfer paper on which the fixing is completed is discharged to the post-processing unit 140, and desired post-processing such as sorting and stapling is performed.
【００６６】まず、読み取りユニット１５０は、原稿を
載置するコンタクトガラス１０６と光学走査系で構成さ
れ、光学走査系は露光ランプ１５１、第１ミラー１５
２、レンズ１５３、ＣＣＤイメージセンサ１５４、第２
ミラー１５５および第３ミラー１５６などからなってい
る。露光ランプ１５１および第１ミラー１５２は図示し
ない第１キャリッジ上に固定され、第２ミラー１５５お
よび第３ミラー１５６は図示しない第２キャリッジ上に
固定されている。原稿を読み取る際には、光路長が変化
しないように第１キャリッジと第２キャリッジとは２対
１の相対速度で機械的に走査される。この光学走査系は
図示しないスキャナ駆動モータによって駆動される。First, the reading unit 150 includes a contact glass 106 on which an original is placed and an optical scanning system. The optical scanning system includes an exposure lamp 151 and a first mirror 15.
2, lens 153, CCD image sensor 154, second
It comprises a mirror 155, a third mirror 156, and the like. The exposure lamp 151 and the first mirror 152 are fixed on a first carriage (not shown), and the second mirror 155 and the third mirror 156 are fixed on a second carriage (not shown). When reading a document, the first carriage and the second carriage are mechanically scanned at a relative speed of 2: 1 so that the optical path length does not change. This optical scanning system is driven by a scanner drive motor (not shown).
【００６７】原稿画像はＣＣＤイメージセンサ１５４に
よって読み取られ、光信号から電気信号に変換されて処
理される。レンズ１５３およびＣＣＤイメージセンサ１
５４を図５において左右方向に移動させると画像倍率を
変化させることができる。すなわち、指定された倍率に
対応してレンズ１５３およびＣＣＤイメージセンサ１５
４の図において左右方向の位置が設定される。The original image is read by the CCD image sensor 154, and is converted from an optical signal to an electric signal and processed. Lens 153 and CCD image sensor 1
The image magnification can be changed by moving 54 in the left-right direction in FIG. That is, the lens 153 and the CCD image sensor 15 correspond to the designated magnification.
4, the position in the left-right direction is set.
【００６８】書き込みユニット１５７はレーザ出力ユニ
ット１５８、結像レンズ１５９およびミラー１６０によ
って構成され、レーザ出力ユニット１５８の内部には、
レーザ光源であるレーザダイオードおよびモータによっ
て高速で定速回転するポリゴンミラーが設けられてい
る。The writing unit 157 includes a laser output unit 158, an imaging lens 159, and a mirror 160. Inside the laser output unit 158,
A polygon mirror that rotates at high speed at a constant speed by a laser diode and a motor as a laser light source is provided.
【００６９】レーザ出力ユニット１５８から照射される
レーザ光は、前記定速回転するポリゴンミラーによって
偏向され、結像レンズ１５９を通ってミラー１６０で折
り返され、感光体面上に集光されて結像する。偏向され
たレーザ光は感光体１１５が回転する方向と直交する所
謂主走査方向に露光走査され、後述する画像処理部のＭ
ＳＵ６０６によって出力された画像信号のライン単位の
記録を行う。そして、感光体１１５の回転速度と記録密
度に対応した所定の周期で主走査を繰り返すことによっ
て感光体面上に画像、すなわち静電潜像が形成される。The laser light emitted from the laser output unit 158 is deflected by the polygon mirror that rotates at a constant speed, passes through the imaging lens 159, is turned back by the mirror 160, and is condensed on the surface of the photosensitive member to form an image. . The deflected laser light is exposed and scanned in a so-called main scanning direction orthogonal to the direction in which the photoconductor 115 rotates.
The image signal output by the SU 606 is recorded in line units. Then, an image, that is, an electrostatic latent image is formed on the photoconductor surface by repeating main scanning at a predetermined cycle corresponding to the rotation speed and the recording density of the photoconductor 115.
【００７０】このように書き込みユニット１５７から出
力されるレーザ光が、画像作像系の感光体１１５に照射
されるが、感光体１１５の一端近傍のレーザ光の照射位
置に主走査同期信号を発生する図示しないビームセンサ
が配されている。このビームセンサから出力される主走
査同期信号に基づいて主走査方向の画像記録タイミング
の制御、および後述する画像信号の入出力用の制御信号
の生成が行われる。As described above, the laser beam output from the writing unit 157 is irradiated on the photoconductor 115 of the image forming system, and a main scanning synchronization signal is generated at the irradiation position of the laser beam near one end of the photoconductor 115. A beam sensor (not shown) is provided. Based on the main scanning synchronization signal output from the beam sensor, control of image recording timing in the main scanning direction and generation of a control signal for input / output of an image signal described later are performed.
【００７１】なお、本発明は上記実施形態に限定される
ものではない。例えば、上記実施形態ではガラス基板側
のみに突起部を設けた場合と、ＣＣＤベアチップ側のみ
に突起部を設けた場合について説明したが、ガラス基板
及びＣＣＤベアチップの両方に突起部を設けるようにし
てもよい。また、上記実施形態では、図４に示した筐体
及び結像レンズを用いた場合について説明したが、鏡筒
に組み込まれた結像レンズ系を鏡筒に形成したＶブロッ
ク上に設置して結像レンズ系全体と固体撮像装置との位
置関係を調整する従来公知の画像読取ユニットに本発明
の固体撮像装置を用いることもできる。即ち、本発明の
骨子を逸脱しない範囲で種々変形して実施することがで
きる。The present invention is not limited to the above embodiment. For example, in the above embodiment, the case where the projection is provided only on the glass substrate side and the case where the projection is provided only on the CCD bare chip side have been described, but the projection is provided on both the glass substrate and the CCD bare chip. Is also good. Further, in the above embodiment, the case where the housing and the imaging lens shown in FIG. 4 are used has been described. However, the imaging lens system incorporated in the lens barrel is installed on a V-block formed in the lens barrel. The solid-state imaging device of the present invention can also be used in a conventionally known image reading unit that adjusts the positional relationship between the entire imaging lens system and the solid-state imaging device. That is, various modifications can be made without departing from the gist of the present invention.
【００７２】[0072]
【発明の効果】以上、説明したように、本発明によれ
ば、固体撮像素子をガラス基板にフェースダウンにて実
装し、さらに固体撮像素子とガラス基板とを固定して、
固体撮像素子表面への水分の到達を防止できるととも
に、樹脂層を薄層化して良好な画像を得ることができ
る。さらに、固体撮像装置を小型薄型軽量化することが
できる。As described above, according to the present invention, the solid-state imaging device is mounted face-down on the glass substrate, and the solid-state imaging device and the glass substrate are fixed.
It is possible to prevent water from reaching the surface of the solid-state imaging device and to obtain a good image by thinning the resin layer. Further, the size and thickness of the solid-state imaging device can be reduced.
【図１】本発明の第１実施形態の固体撮像装置の製造方
法を示す図である。FIG. 1 is a diagram illustrating a method for manufacturing a solid-state imaging device according to a first embodiment of the present invention.
【図２】本発明の第２実施形態の固体撮像装置の製造方
法を示す図である。FIG. 2 is a diagram illustrating a method for manufacturing a solid-state imaging device according to a second embodiment of the present invention.
【図３】図１の固体撮像装置の斜視図である。FIG. 3 is a perspective view of the solid-state imaging device of FIG. 1;
【図４】本発明の固体撮像装置を用いた画像読取ユニッ
トの斜視図である。FIG. 4 is a perspective view of an image reading unit using the solid-state imaging device of the present invention.
【図５】本発明の固体撮像装置を用いた画像読取ユニッ
トを備えた画像形成装置の概略図である。FIG. 5 is a schematic diagram of an image forming apparatus provided with an image reading unit using the solid-state imaging device of the present invention.
【図６】従来の固体撮像装置を示す断面図である。FIG. 6 is a cross-sectional view illustrating a conventional solid-state imaging device.
【図７】従来の固体撮像装置の製造方法を示す断面図で
ある。FIG. 7 is a cross-sectional view illustrating a method for manufacturing a conventional solid-state imaging device.
７ 固体撮像装置 ７１ ガラス基板（透明部材） ７１ａ 突起部 ７３ 配線パターン ７４ バンプ ７５ａ 画素有効領域 ７５ｂ 突起部 Ｓ１ 接着剤 Ｓ２ 封止用樹脂 7 Solid-state imaging device 71 Glass substrate (transparent member) 71a Projection 73 Wiring pattern 74 Bump 75a Pixel effective area 75b Projection S1 Adhesive S2 Sealing resin
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０４Ｎ 5/335 Ｈ０１Ｌ 27/14 Ｄ (72)発明者 小林 俊夫 東京都大田区中馬込１丁目３番６号 株式 会社リコー内 (72)発明者 矢柴 明雄 東京都大田区中馬込１丁目３番６号 株式 会社リコー内 (72)発明者 竹本 浩志 東京都大田区中馬込１丁目３番６号 株式 会社リコー内 (72)発明者 佐野 武 東京都大田区中馬込１丁目３番６号 株式 会社リコー内 (72)発明者 坂津 務 東京都大田区中馬込１丁目３番６号 株式 会社リコー内 Ｆターム(参考） 4M109 AA01 BA04 CA10 DB17 EA15 GA01 4M118 AA10 AB01 BA03 BA08 CA02 DD09 GD03 HA02 HA11 HA26 HA31 5C024 CY47 CY48 EX01 EX23 EX25 GY01 5F044 KK06 LL11 LL15 RR18 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H04N 5/335 H01L 27/14 D (72) Inventor Toshio Kobayashi 1-3-6 Nakamagome, Ota-ku, Tokyo No. Ricoh Co., Ltd. (72) Inventor Akio Yashiba 1-3-6 Nakamagome, Ota-ku, Tokyo Co., Ltd. (72) Inventor Hiroshi Takemoto 1-3-6 Nakamagome, Ota-ku, Tokyo Co., Ltd. Ricoh (72) Inventor Takeshi Sano 1-3-6 Nakamagome, Ota-ku, Tokyo Ricoh Co., Ltd. (72) Inventor Tsukasa Sakazu 1-3-6 Nakamagome, Ota-ku, Tokyo F-term in Ricoh Co., Ltd. (Reference) 4M109 AA01 BA04 CA10 DB17 EA15 GA01 4M118 AA10 AB01 BA03 BA08 CA02 DD09 GD03 HA02 HA11 HA26 HA31 5C024 CY47 CY48 EX01 EX23 EX25 GY01 5F044 KK06 LL11 LL15 RR18
Claims (16)
ス等の透明部材に設けられた配線パターンと対向してい
る固体撮像装置において、 前記撮像素子と前記透明部材との間に前記撮像素子の画
素有効領域を被覆し薄層化して充填されている透明な接
着剤と、 前記撮像素子と前記透明部材の配線パターンとの間を導
通するバンプとを備えていることを特徴とする固体撮像
装置。1. A solid-state imaging device in which an image sensor faces a wiring pattern provided on a transparent member such as glass in a face-down state, wherein a pixel of the image sensor is disposed between the image sensor and the transparent member. A solid-state imaging device comprising: a transparent adhesive that covers an effective area and is filled in a thin layer; and a bump that conducts between the imaging element and a wiring pattern of the transparent member.
けられた前記バンプの高さが、薄層化された接着剤の厚
さと該接着剤から配線パターンまでの厚み方向の距離と
の和よりも高いことを特徴とする請求項１に記載の固体
撮像装置。2. The method according to claim 1, wherein the height of the bump provided on the imaging element or the wiring pattern is larger than a sum of a thickness of the thinned adhesive and a distance in a thickness direction from the adhesive to the wiring pattern. The solid-state imaging device according to claim 1, wherein the height is high.
画素有効領域と薄層化された接着剤厚みとの積より多い
ことを特徴とする請求項２に記載の固体撮像装置。3. The solid-state imaging device according to claim 2, wherein an amount of the adhesive applied is larger than a product of a pixel effective area of the image sensor and a thickness of the thinned adhesive.
状に形成されていることを特徴とする請求項２に記載の
固体撮像装置。4. The solid-state imaging device according to claim 2, wherein the image effective area on the transparent member side is formed in a convex shape.
ンプ周囲も封止されていることを特徴とする請求項１又
は２に記載の固体撮像装置。5. The solid-state imaging device according to claim 1, wherein the periphery of the bump is also sealed with a sealing resin different from the adhesive.
とを特徴とする請求項５に記載の固体撮像装置。6. The solid-state imaging device according to claim 5, wherein the sealing resin is an opaque resin.
状に形成されていることを特徴とする請求項２に記載の
固体撮像装置。7. The solid-state imaging device according to claim 2, wherein the image effective area on the imaging element side is formed in a convex shape.
ス等の透明部材に設けられた配線パターンと対向してい
る固体撮像装置の製造方法において、 前記透明部材と前記撮像素子との間に前記撮像素子の画
素有効領域を被覆できる量の透明な接着剤を充填し、 前記撮像素子と前記透明部材の配線パターンとがバンプ
により導通するように、前記撮像素子と前記透明部材と
を所定間隔まで接近させ、 前記接着剤を薄層化して前記画素領域を被覆した後、 前記接着剤を硬化させることを特徴とする固体撮像装置
の製造方法。8. A method for manufacturing a solid-state imaging device in which an imaging device faces a wiring pattern provided on a transparent member such as glass in a face-down state, wherein the imaging is performed between the transparent member and the imaging device. Fill an amount of transparent adhesive that can cover the pixel effective area of the device, and bring the image sensor and the transparent member closer to a predetermined distance so that the image sensor and the wiring pattern of the transparent member are electrically connected by bumps. A method of manufacturing a solid-state imaging device, comprising: thinning the adhesive, covering the pixel region, and then curing the adhesive.
する請求項８に記載の固体撮像装置の製造方法。9. The method according to claim 8, wherein the adhesive is light-cured.
ことを特徴とする請求項８又は９に記載の固体撮像装置
の製造方法。10. The method according to claim 8, wherein the adhesive has transparency after curing.
り若干多い量を接近前に予め塗布しておくことを特徴と
する請求項８〜１０の何れかに記載の固体撮像装置の製
造方法。11. The method for manufacturing a solid-state imaging device according to claim 8, wherein the adhesive is applied in an amount slightly larger than the volume of the predetermined interval before approaching. .
させる際に、接着剤が画素有効領域に均一に分散するよ
う圧力をかけることを特徴とする請求項８に記載の固体
撮像装置の製造方法。12. The manufacturing of the solid-state imaging device according to claim 8, wherein a pressure is applied so that an adhesive is uniformly dispersed in a pixel effective area when the imaging element and the transparent member are brought close to each other. Method.
有効領域の全周囲に封止用樹脂を充填して硬化させるこ
とを特徴とする請求項８に記載の固体撮像装置の製造方
法。13. The method for manufacturing a solid-state imaging device according to claim 8, wherein a sealing resin is filled and hardened around the entire pixel effective area including the conductive bump.
特徴とする請求項１３に記載の固体撮像装置の製造方
法。14. The method according to claim 13, wherein the sealing resin is opaque.
を用いた画像読取ユニット。15. An image reading unit using the solid-state imaging device according to claim 1.
た画像走査装置。16. An image scanning apparatus using the image reading unit according to claim 15.
Priority Applications (2)
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|---|---|---|---|
| JP2000190577A JP3971087B2 (en) | 2000-06-26 | 2000-06-26 | Solid-state imaging device |
| US09/886,990 US6472247B1 (en) | 2000-06-26 | 2001-06-25 | Solid-state imaging device and method of production of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000190577A JP3971087B2 (en) | 2000-06-26 | 2000-06-26 | Solid-state imaging device |
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|---|---|
| JP2002009206A true JP2002009206A (en) | 2002-01-11 |
| JP3971087B2 JP3971087B2 (en) | 2007-09-05 |
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ID=18690026
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| Application Number | Title | Priority Date | Filing Date |
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| JP2000190577A Expired - Fee Related JP3971087B2 (en) | 2000-06-26 | 2000-06-26 | Solid-state imaging device |
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| JP2008193441A (en) * | 2007-02-06 | 2008-08-21 | Matsushita Electric Ind Co Ltd | Optical device and manufacturing method thereof |
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| WO2016181433A1 (en) * | 2015-05-08 | 2016-11-17 | オリンパス株式会社 | Solid-state image pickup device |
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| JP2008193441A (en) * | 2007-02-06 | 2008-08-21 | Matsushita Electric Ind Co Ltd | Optical device and manufacturing method thereof |
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