JP2002009005A - Semiconductor manufacturing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable a flow of material gas flowing over a susceptor to be uniform and material gas to be quickly switched from one to another, easily handling a semiconductor manufacturing device. SOLUTION: A lateral reactor 10 is composed of a reactor main body 11, a gas inlet pipe 12 with a gas inlet opening 21, and a susceptor 31 which holds and heats a substrate 100. The gas inlet pipe 12 gets gradually larger in diameter, starting from the gas inlet opening 21 toward the susceptor 31 and is equipped with a spreading part 22 whose angle of spread is 12 deg.. A finely rugged region 24 like ground glass is provided to the inner wall surface of the spreading part 22.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for growing a semiconductor while flowing a source gas substantially parallel to a substrate surface.

[0002]

2. Description of the Related Art A group II-IV compound or group III-V compound semiconductor is a semiconductor of a direct transition type having a large energy gap and is regarded as a promising light-emitting material having an emission wavelength ranging from the visible region to the ultraviolet region.

In particular, gallium (Ga) is used as a group III element.
A group III nitride semiconductor containing nitrogen (N) as a group V element, which contains nitrogen and aluminum (Al), etc., has attracted attention, and a method of manufacturing a nitride semiconductor excellent in crystallography has been demanded.

Among them, metal organic chemical vapor deposition (MOCV)
The D) method is being researched and developed in various fields as a powerful method that can be realized industrially.

Hereinafter, a conventional MOCVD semiconductor manufacturing apparatus, that is, a so-called horizontal reactor in which a raw material gas flows in parallel to a substrate surface, will be described with reference to the drawings.

As shown in FIGS. 7A and 7B,
The horizontal reactor 200 includes a reactor main body 201, a gas introduction pipe 202 having a gas inlet 221, and a reactor main body 201.
And a susceptor 211 fitted to the bottom of the susceptor. Here, the reactor main body 201 and the gas introduction pipe 202 are formed of, for example, quartz glass. Further, a gas outlet 212 is provided at an end of the reaction furnace main body 201 opposite to the gas introduction pipe 202.

The susceptor 211 has a substrate 100 on its upper surface.
And the substrate 100 is heated to a predetermined temperature.

The raw material gas 101 introduced from the gas inlet 221 forms a laminar flow in which no vortex is generated in the gas flow before reaching the susceptor 211 from the gas inlet 221. In order to realize excellent crystal growth, it is necessary that the velocity distribution of the gas flow and the supply amount of the source gas be spatially uniform.

However, the opening width of the gas inlet 221 is a relatively small size determined by the manufacturing standard of the gas pipe, and it is necessary to increase the opening width to be equal to or larger than the width of the susceptor 211. As a result, a widening portion 222 is formed in the gas introduction pipe 202, the width of which increases with increasing distance from the gas introduction port 221 toward the susceptor 211. At this time, if the spread angle α of the spread portion 222 is large, FIG.
As shown in (a), in the flow boundary layer near the inner wall surface of the expanding portion 222, the streamline along the wall surface is separated from the wall surface at a certain separation point, and flows back toward the gas inlet 221 to separate the gas. A streamline (vortex streamline) 102 is formed, and the inside of a curved surface formed by the separated streamline 102 becomes a wake, that is, a vortex 103. In other words, a backflow occurs upstream along the wall surface of the expanding portion 222, and the backflow is separated from the wall surface at a certain separation point to form the separated streamline 102. Although the streamline of the gas introduction pipe 202 is shown only on the wall on the left side with respect to the gas flow, a streamline almost line-symmetrical also occurs on the wall on the right side.

When the vortex 103 is generated in the expanding portion 222, the gas flow path is substantially narrowed or deformed, so that the velocity distribution of the gas flow on the susceptor 211 and the spatial distribution of the raw material gas supply amount are reduced. Does not satisfy the required uniformity. Furthermore, since the source gas 101 stays inside the vortex 103, switching from one source gas to another source gas cannot be performed quickly, so that the profile of the interface when changing the composition of the growing semiconductor is changed. Cannot be changed abruptly.

To solve these problems, for example,
Author GBStringfellow, Title Organometallic Vapor-Ph
ase Epitaxy, Second Edition, (p.364), Publisher Acade
In micPress, the spread angle α shown in FIG.
It has been proposed to adopt a configuration in which the side wall of the expanding portion 222 is gently expanded.

As another solution, as shown in FIG. 8A and FIG. 8B or FIG. 9A and FIG. Alternatively, by providing a porous diffusion material (diffuser) 223, vortices generated in the gas flow of the expanding portion 222 are prevented.

[0013]

However, in the conventional horizontal reactor 200, if the spread angle α of the expanding portion 222 is set to about 7 ° or less, the gas inlet 221 to the gas outlet 212 of the horizontal reactor 200 are not used. However, there is a problem in that the installation area becomes large or the device is easily damaged, and handling becomes difficult.

On the other hand, when the diffusing material 223 is provided inside the gas introduction pipe 202, the gas flow velocity distribution and the spatial uniformity of the supply amount of the raw material gas are improved, but the gas flow is reduced. As a result, a new vortex is generated due to the reflection, and also in this case, there is a problem that switching from one source gas to another source gas cannot be performed quickly.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and has as its object to make the flow of the raw material gas on the susceptor uniform and to quickly switch the raw material gas while facilitating the handling of the horizontal reactor. To be able to do it.

[0016]

In order to achieve the above object, the present invention has a structure in which fine irregularities are provided on a wall surface of a gas inlet of a reactor.

Specifically, the semiconductor manufacturing apparatus according to the present invention comprises a susceptor for holding a substrate, a reactor main body for covering the susceptor so that the substrate is exposed inside, an opening having an opening diameter smaller than the width of the susceptor. And a gas introduction unit for introducing a source gas onto the substrate substantially in parallel with the substrate surface and having a gas introduction unit air-tightly connected to the reactor body, wherein the gas introduction unit has fine irregularities on its inner wall surface. A region is formed.

In general, in a horizontal reactor, the opening diameter of the gas introduction portion is smaller than the width of the susceptor, so that the space between the wall surfaces of the gas introduction portion necessarily increases in the direction toward the susceptor. Therefore, since the wall surface is inclined with respect to the direction in which the gas flows, a separation phenomenon occurs in which the gas flow is separated from the wall surface due to the viscosity of the gas, and further, a vortex is generated. On the other hand, in the semiconductor manufacturing apparatus of the present invention, since an uneven area having fine unevenness is formed on the inner wall surface of the gas introduction section, the gas flow flowing through the gas introduction section is caused by fine unevenness on the wall surface. Many fine eddies are generated in the vicinity. The fine vortex near the wall provides an effect equivalent to a decrease in the viscosity of the gas flow, that is, an effect equivalent to a decrease in the degree of adhesion of the gas flow to the wall. Even if the angle (spread angle) formed by the direction from the surface to the susceptor is set to 7 ° or more, the peeling phenomenon hardly occurs. As a result, a uniform gas flow can be obtained and the length of the reactor can be reduced. Further, since there is no need to provide a diffusing material in the flow path of the gas introduction section, the source gas can be quickly switched.

In the semiconductor manufacturing apparatus of the present invention, it is preferable that the width of the gas introduction portion is formed so as to gradually increase from the opening toward the susceptor.

Alternatively, in the semiconductor manufacturing apparatus according to the present invention, it is preferable that the width of the gas introduction portion is formed so as to smoothly increase from the opening toward the susceptor.

In the semiconductor manufacturing apparatus according to the present invention, it is preferable that the angle formed between the wall surface of the gas inlet and the direction from the opening toward the susceptor is small on the opening side and large on the susceptor side.

Alternatively, in the semiconductor manufacturing apparatus according to the present invention, it is preferable that the angle formed by the wall surface of the gas inlet and the direction from the opening toward the susceptor is large on the opening side and small on the susceptor side.

In the semiconductor manufacturing apparatus of the present invention, it is preferable that the inner wall surface of the gas inlet has an uneven area on the opening side and a mirror area on the susceptor side. In this case, the uniformity of the gas flow on the susceptor can be further improved.

In the semiconductor manufacturing apparatus of the present invention, the boundary portion between the uneven region and the mirror surface region is provided at a position closer to the susceptor when the viscosity of the source gas is relatively large than when the viscosity is relatively small. Is preferred. By doing so, the area of the uneven region occupying the inner wall surface of the gas introduction section increases, so that substantial tackiness due to the wall surface of the source gas having a relatively large viscosity can be reliably reduced.

In the semiconductor manufacturing apparatus according to the present invention, the boundary portion between the uneven region and the mirror surface region is provided at a position closer to the susceptor when the flow rate of the source gas is relatively high than when the flow rate of the source gas is relatively low. Is preferred. By doing so, the area of the uneven area occupying the inner wall surface of the gas inlet becomes large, so that even if the source gas is relatively easy to flow due to the relatively high inflow speed, substantial adhesion due to the wall surface will occur. Can be reliably reduced.

In the semiconductor manufacturing apparatus of the present invention, the angle between the wall of the gas inlet and the direction from the opening toward the susceptor is larger when the viscosity of the raw material gas is relatively large than when it is relatively small. Is preferably small. In this case, even if the raw material gas has a relatively large viscosity and is likely to cause the peeling phenomenon, the peeling phenomenon from the wall surface can be reduced.

Further, in the semiconductor manufacturing apparatus of the present invention,
It is preferable that the angle between the wall surface of the gas inlet and the direction from the opening toward the susceptor is smaller when the flow rate of the raw material gas is relatively large than when it is relatively small. Even in the case of a raw material gas in which the separation phenomenon easily occurs due to the relatively high inflow speed, the separation phenomenon from the wall surface can be reduced.

In the semiconductor manufacturing apparatus according to the present invention, it is preferable that the reactor main body and the gas introduction portion are made of glass, and the uneven region is formed in a ground glass shape.

[0029]

(First Embodiment) A first embodiment of the present invention.
An embodiment will be described with reference to the drawings.

FIGS. 1A and 1B show a first embodiment of the present invention.
(A) is a semiconductor manufacturing apparatus according to the embodiment of FIG.
1 shows a plan configuration of a horizontal reactor for OCVD, and FIG. 2B shows a side configuration thereof.

As shown in FIGS. 1A and 1B,
The horizontal reactor 10 includes a reactor main body 11 and a gas inlet 21.
Gas introduction pipe 12 having
And a susceptor 31 made of, for example, carbon. Here, the reactor main body 11 and the gas introduction pipe 12 are formed of, for example, quartz glass.

An opening 11a is provided at the bottom of the reactor main body 11, and a susceptor 31 whose bottom is heated by a heater (not shown) or the like is provided in the opening 11a.
1 and is fitted so that the height of the upper surface is aligned with the bottom surface of the reactor main body 11.

A gas outlet 13 is provided at the end of the reactor main body 11 opposite to the gas introduction pipe 12.

The gas introduction pipe 12 has a gas introduction port 21 whose opening diameter is smaller than the width of the susceptor 31 determined by the production standard of the gas pipe. Introduce in parallel. Gas introduction pipe 1
The other end of the second gas inlet 21 is hermetically welded to the reactor main body 11.

The gas introduction pipe 12 is connected to a gas introduction port 21.
The divergent portion 22 has a widening portion 22 in which the distance between the two wall surfaces gradually increases from the side toward the susceptor 31. Here, the value of the spread angle α formed by the wall surface of the spread portion 22 and the direction from the gas inlet 21 toward the susceptor 31 is set to about 12 °.

The horizontal reactor 10 according to the first embodiment comprises:
An uneven region 24 having fine ground glass-like unevenness is formed on the inner wall surface of the expanding portion 22.

Inside the gas introduction pipe 12, a partition plate 23 for dividing the inside into an upper layer passage 12a and a lower layer passage 12b is provided.

Hereinafter, the substrate 10 made of sapphire is used as an example by using the horizontal reactor 10 configured as described above.
A case in which a semiconductor made of gallium nitride (GaN) is grown on zero will be described.

A group III source, trimethylgallium (TMG), and hydrogen (H ₂ ) for diluting the TMG are introduced into the upper passage 12a of the gas introduction tube 12 at a flow rate of about 10 m / sec.

On the other hand, ammonia (NH ₃ ) as a nitrogen source is introduced into the lower passage 12b at a flow rate of about 10 m / sec.

The group III source gas flowing through the upper channel 12a and the nitrogen source gas flowing through the lower channel 12b merge near the junction between the reactor main body 11 and the gas introduction pipe 12, and merge. The flow velocity of the gas on the susceptor 31 is about 1 m /
It has been adjusted to be seconds.

Hereinafter, the function and effect of the uneven region 24 provided on the inner wall surface of the expanding portion 22 will be described.

FIG. 2 shows a horizontal reactor 1 according to the first embodiment.
The uneven area 24 provided on the inner wall surface of the expanding portion 22 in the gas introduction pipe 12 of No. 0 is enlarged.

As shown in the partially enlarged view of FIG. 2, a fine eddy current 104 is generated near the uneven region 24 provided on the inner wall surface of the expanding portion 22, but the eddy current line 102 and the eddy current line 102 shown in FIG. No large vortex 103 is generated. Due to the fine vortex 104, the raw material gas 101 has a reduced degree of adhesion to the inner wall surface of the expanding portion 22 near the inner wall surface of the expanding portion 22. Is generated, and the velocity distribution of the gas flow on the susceptor 31 and the supply amount of the raw material gas 101 become substantially uniform spatially.

Thus, the spread angle α is about 12 °,
Even if it is set to a value of 7 ° or more, the separation phenomenon in which the gas flow separates from the inner wall surface of the gas introduction pipe 12 is less likely to occur, so that the length of the horizontal reactor 10 can be shortened and uniform gas Streams can also be obtained. In addition, since there is no need to provide a diffusing material inside the gas introduction pipe 12, the source gas 101 can be switched quickly, and therefore, the growing gallium nitride semiconductor can be made of, for example, indium (I).
When the composition of the semiconductor is changed by adding n), the profile of the hetero interface can be changed sharply.

The uneven region 24 is not limited to the widened portion 22 but may be provided in a portion of the gas inlet pipe 12 where the wall surfaces on the gas inlet 21 side are parallel to each other.

In the case of a structure in which the ceiling surface of the gas introduction pipe 12 becomes higher as it approaches the susceptor 31, it is preferable to provide a ground glass-like uneven region 24 also on the ceiling surface.

(Second Embodiment) Hereinafter, a second embodiment of the present invention will be described with reference to the drawings.

FIGS. 3A and 3B show a second embodiment of the present invention.
(A) is a semiconductor manufacturing apparatus according to the embodiment of FIG.
1 shows a plan configuration of a horizontal reactor for OCVD, and FIG. 2B shows a side configuration thereof. In FIGS. 3A and 3B, the same components as those shown in FIGS. 1A and 1B are denoted by the same reference numerals, and description thereof will be omitted.

As shown in FIGS. 3A and 3B,
The expanding portion 22 of the gas introduction pipe 12 in the horizontal reaction furnace 10 according to the second embodiment has an uneven area 24 on the gas introduction port 21 side of the inner wall surface, and has a mirror-like surface on the remaining inner wall surface. It is characterized by having a finished mirror surface area 25.

Further, the boundary between the uneven region 24 and the mirror surface region 25 is provided at a position closer to the susceptor 31 when the viscosity of the source gas 101 is relatively large than when the viscosity is relatively small.

The boundary between the uneven region 24 and the mirror surface region 25 is provided at a position closer to the susceptor 31 when the flow rate of the source gas 101 is relatively high than when the flow rate is relatively low.

Here, the value of the spread angle α of the spread portion 22 is set to about 12 °.

In the second embodiment, as shown in FIG. 3B, the boundary of the lower road 12b is set closer to the susceptor 31 than the boundary of the upper road 12a.

Hereinafter, a case will be described in which a semiconductor made of gallium nitride is grown on a substrate 100 made of sapphire using the horizontal reactor 10 having the above-described structure.

Here, since the ammonia gas as the nitrogen source has a higher viscosity than the hydrogen gas that dilutes the TMG gas as the group III source, the ammonia gas is introduced into the lower passage 12b for the above-described reason.

Specifically, the upper passage 12 of the gas introduction pipe 12
Hydrogen for diluting TMG is introduced at a flow rate of about 8 m / sec into a, while ammonia is introduced at a flow rate of about 12 m / sec into the lower passage 12b.

According to the second embodiment, since the mirror region 25 is provided in the region of the inner wall surface of the expanding portion 22 on the susceptor 31 side, the fine vortex 104 shown in the enlarged view of FIG. Gradually disappears at. As a result, the velocity distribution of the gas flow of the source gas 101 and the spatial uniformity of the supply amount of the source gas on the susceptor 31 are further improved.

In addition, in accordance with the value of the viscosity of the raw material gas 101, that is, when the viscosity is relatively large, the ratio of the uneven region 24 to the mirror surface region 25 is increased. Even when the inflow velocity is relatively high, the ratio of the uneven area 24 to the mirror area 25 is increased, so that the separation phenomenon of the gas flow from the wall surface can be reliably reduced.

As an example of the inflow velocity of the raw material gas 101,
When the flow rate of the ammonia gas is increased to 15 m / sec, the boundary between the uneven region 24 and the mirror surface region 25 in the lower layer path 12b shown in FIG. Is preferably enlarged.

Since there is no need to provide a diffusing material inside the gas introduction pipe 12, the source gas 101 can be switched quickly.

(Third Embodiment) Hereinafter, a third embodiment of the present invention will be described with reference to the drawings.

FIGS. 4A and 4B show a third embodiment of the present invention.
(A) is a semiconductor manufacturing apparatus according to the embodiment of FIG.
1 shows a plan configuration of a horizontal reactor for OCVD, and FIG. 2B shows a side configuration thereof. 4A and 4B, the same components as those shown in FIGS. 1A and 1B are denoted by the same reference numerals, and description thereof will be omitted.

As shown in FIGS. 4A and 4B,
Gas inlet pipe 12 of horizontal reactor 10 according to the third embodiment
Has a first expanding portion 22A and a second expanding portion 22B that are sequentially and hermetically welded from the gas inlet 21 side and have different spreading angles. The second expanding portion 22B is hermetically welded to the reactor main body 11.

The first spread angle α ₁ of the first spread portion 22A is set to about 6 °, and the second spread angle 22A of the second spread portion 22B is set to about 6 °.
The spread angle alpha ₂ is set to approximately 14 °. That is, the first divergence angle α ₁ of the portion of the gas inlet tube 12 near the gas inlet 21 is made smaller than the second divergence angle α ₂ of the portion near the susceptor 31,
, The separation phenomenon of the gas flow is less likely to occur.

Further, an uneven area 24 is formed on a part of the side surface of the first expanding part 22A and the side surface of the second expanding part 22B on the side of the gas inlet 21.
A mirror surface region 25 is formed in the remaining side surface of 2B.

Also in the third embodiment, an uneven area 24 is provided on the side surface of the first expanding section 22A, and a mirror area 25 is formed on the inner wall surface of the second expanding section 22B on the susceptor 31 side. Are provided, the fine vortex 104 shown in the enlarged view of FIG. As a result, the velocity distribution of the gas flow of the source gas 101 and the spatial uniformity of the supply amount of the source gas on the susceptor 31 are further improved.

Further, since there is no need to provide a diffusing material inside the gas introduction pipe 12, the source gas 101 can be switched quickly.

(Modification of Third Embodiment) A modification of the third embodiment of the present invention will be described below with reference to the drawings.

FIGS. 5A and 5B show a third embodiment of the present invention.
A semiconductor manufacturing apparatus according to a modification of the first embodiment,
(A) shows a plane configuration of a horizontal reactor for MOCVD,
(B) shows the side structure. In FIGS. 5A and 5B, the same components as those shown in FIGS. 4A and 4B are denoted by the same reference numerals, and description thereof will be omitted.

As shown in FIGS. 5A and 5B,
The gas introduction pipe 12 of the horizontal reactor 10 according to the present modification is welded in a gas-tight manner sequentially from the gas introduction port 21 side, and the first divergent portion 22A and the second divergent portion 2 having different divergence angles from each other.
2B. The second expanding portion 22B is hermetically welded to the reactor main body 11.

In this modification, the first expanding portion 22
The first spreading angle α _{1 of A} is set to about 14 °,
Second expansion angle alpha ₂ is set to about 6 ° of the spread portion 22B. As a result, the first divergence angle α ₁ of the portion near the gas inlet 21 in the gas inlet tube 12 is made larger than the second divergence angle α ₂ of the portion near the susceptor 31, and the length of the horizontal reactor 10 is increased. Is being shortened.

An irregular region 24 is formed on the side surface of the first expanding portion 22A, and a mirror surface region 25 is formed on the side surface of the second expanding portion 22B.

As described above, also in the present modification, the irregularities 24 are provided on the side surfaces of the first expanding portion 22A and the susceptor 3 on the inner wall surface of the second expanding portion 22B.
Since the mirror area 25 is provided in the area on the first side, FIG.
The fine vortex 104 shown in the enlarged view of FIG. As a result, the velocity distribution of the gas flow of the source gas 101 and the spatial uniformity of the supply amount of the source gas on the susceptor 31 are further improved.

In the third embodiment and its modified example, the number of stages in which the gas introduction pipe 12 is expanded is not limited to two,
There may be three or more stages. Further, it is also effective to smoothly change the curvature.

When the raw material gas 101 has a high viscosity or a high inflow velocity, the spread angle α ₁ ,
Smaller alpha _2, since the occurrence of vortex is suppressed, which is preferable.

As in the second embodiment, it is preferable to change the ratio of the concavo-convex region 24 to the mirror surface region 25 according to the value of the viscosity of the source gas 101 or the flow rate.

As another modified example of the third embodiment, as shown in FIGS. 6A and 6B, when the spread angle α of the gas introduction pipe 12 is smoothly changed, or as shown in FIG. As shown in FIG. 6 (c), when changing stepwise, the uneven region 24 is provided in a region where the spread angle is relatively large in the spread portion 22, and the mirror surface region 25 is formed in a region where the spread angle is relatively small. May be provided.

[0079]

According to the semiconductor manufacturing apparatus of the present invention, the length of the apparatus can be reduced while obtaining a uniform gas flow in the horizontal reactor. Further, since there is no need to provide a diffusing material in the flow path of the gas introduction unit, the source gas can be switched quickly.

[Brief description of the drawings]

FIGS. 1A and 1B show a semiconductor manufacturing apparatus according to a first embodiment of the present invention, wherein FIG. 1A is a plan view,
(B) is a side view.

FIG. 2 is a partially enlarged sectional view of an inner wall of a gas introduction pipe in the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

3A and 3B show a semiconductor manufacturing apparatus according to a second embodiment of the present invention, and FIG. 3A is a plan view,
(B) is a side view.

4A and 4B show a semiconductor manufacturing apparatus according to a third embodiment of the present invention, and FIG. 4A is a plan view,
(B) is a side view.

FIGS. 5A and 5B show a semiconductor manufacturing apparatus according to a modification of the third embodiment of the present invention, wherein FIG. 5A is a plan view and FIG. 5B is a side view.

FIGS. 6A to 6C are plan views of a semiconductor manufacturing apparatus according to another modification of the third embodiment of the present invention.

7A and 7B show a conventional semiconductor manufacturing apparatus for MOCVD, FIG. 7A is a plan view, and FIG. 7B is a sectional view taken along line VIIb-VIIb of FIG.

8A and 8B show a conventional semiconductor manufacturing apparatus for MOCVD, FIG. 8A is a plan view, and FIG. 8B is a cross-sectional view taken along line VIIIb-VIIIb of FIG. 8A.

FIGS. 9A and 9B show a conventional MOCVD semiconductor manufacturing apparatus, wherein FIG. 9A is a plan view and FIG. 9B is a side view.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Horizontal reaction furnace 11 Reactor main body 11a Opening 12 Gas introduction pipe (gas introduction part) 12a Upper layer path 12b Lower layer path 13 Gas outlet 21 Gas introduction port (opening) 22 Expanding part 22A First expanding part 22B Second Spread portion 23 Partition plate 24 Uneven area 25 Mirror area 31 Susceptor 100 Substrate 101 Source gas 104 Fine eddy current

Claims (11)

[Claims] 1. A susceptor for holding a substrate, a reactor main body for covering the susceptor so that the substrate is exposed inside, and an opening having an opening diameter smaller than the width of the susceptor,
A gas introduction unit for introducing a raw material gas substantially parallel to the substrate surface onto the substrate, and a gas introduction unit airtightly connected to the reaction furnace main body, wherein the gas introduction unit has fine irregularities on its inner wall surface. A semiconductor manufacturing apparatus, wherein an uneven region is formed. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the width of the gas introduction section is formed so as to gradually increase from the opening toward the susceptor. 3. The semiconductor manufacturing apparatus according to claim 1, wherein the width of the gas introduction portion is formed so as to increase smoothly from the opening to the susceptor. 4. An angle formed between a wall surface of the gas inlet and a direction from the opening toward the susceptor is small on the opening side and large on the susceptor side. The semiconductor manufacturing apparatus according to any one of the above. 5. An angle formed between a wall surface of the gas inlet and a direction from the opening toward the susceptor is large on the opening side and small on the susceptor side. The semiconductor manufacturing apparatus according to any one of the above. 6. The gas introduction section according to claim 1, wherein the inner wall surface has the concave-convex region on the opening side and a mirror surface region on the susceptor side. The semiconductor manufacturing apparatus according to any one of the above. 7. A boundary portion between the uneven region and the mirror surface region is provided at a position closer to the susceptor when the raw material gas has a relatively large viscosity than when the raw material gas has a relatively small viscosity. 7. The semiconductor manufacturing apparatus according to claim 6, wherein: 8. A boundary portion between the concavo-convex region and the mirror surface region is provided at a position closer to the susceptor when the flow rate of the source gas is relatively large than when the flow rate is relatively low. 7. The semiconductor manufacturing apparatus according to claim 6, wherein: 9. An angle formed by a wall surface of the gas introduction portion and a direction from the opening toward the susceptor is relatively larger when the viscosity of the source gas is relatively small than when the viscosity is relatively small. The semiconductor manufacturing apparatus according to claim 1, wherein the semiconductor manufacturing apparatus is small. 10. An angle formed by a wall surface of the gas introduction portion and a direction from the opening to the susceptor is relatively larger when the flow rate of the raw material gas is relatively low than when the flow rate is relatively low. 9. The device according to claim 1, wherein the size is small.
The semiconductor manufacturing apparatus according to any one of the above. 11. The semiconductor according to claim 1, wherein the reactor main body and the gas introduction portion are made of glass, and the uneven region is formed in a ground glass shape. manufacturing device.