JP2002006808A - 電子装置およびその駆動方法 - Google Patents
電子装置およびその駆動方法Info
- Publication number
- JP2002006808A JP2002006808A JP2001119608A JP2001119608A JP2002006808A JP 2002006808 A JP2002006808 A JP 2002006808A JP 2001119608 A JP2001119608 A JP 2001119608A JP 2001119608 A JP2001119608 A JP 2001119608A JP 2002006808 A JP2002006808 A JP 2002006808A
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- JP
- Japan
- Prior art keywords
- period
- electronic device
- periods
- frame
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
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- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical class [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
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- 125000006850 spacer group Chemical group 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 3
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
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- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 3
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- 229920002620 polyvinyl fluoride Polymers 0.000 description 3
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- 239000002356 single layer Substances 0.000 description 3
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- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
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- 230000005281 excited state Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
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- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
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- 150000003254 radicals Chemical class 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 241001270131 Agaricus moelleri Species 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 101100411598 Mus musculus Rab9a gene Proteins 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 244000078856 Prunus padus Species 0.000 description 1
- 229910004529 TaF 5 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 229910052801 chlorine Inorganic materials 0.000 description 1
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- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
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- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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- 229920002647 polyamide Polymers 0.000 description 1
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- 229920002098 polyfluorene Polymers 0.000 description 1
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- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
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- 230000002441 reversible effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of El Displays (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001119608A JP2002006808A (ja) | 2000-04-19 | 2001-04-18 | 電子装置およびその駆動方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000118619 | 2000-04-19 | ||
| JP2000-118619 | 2000-04-19 | ||
| JP2001119608A JP2002006808A (ja) | 2000-04-19 | 2001-04-18 | 電子装置およびその駆動方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011187031A Division JP2012027479A (ja) | 2000-04-19 | 2011-08-30 | 発光装置及び電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002006808A true JP2002006808A (ja) | 2002-01-11 |
| JP2002006808A5 JP2002006808A5 (enrdf_load_stackoverflow) | 2008-05-22 |
Family
ID=26590432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001119608A Withdrawn JP2002006808A (ja) | 2000-04-19 | 2001-04-18 | 電子装置およびその駆動方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002006808A (enrdf_load_stackoverflow) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003323157A (ja) * | 2002-02-28 | 2003-11-14 | Semiconductor Energy Lab Co Ltd | 発光装置の駆動方法及び電子機器 |
| JP2004361737A (ja) * | 2003-06-05 | 2004-12-24 | Nippon Hoso Kyokai <Nhk> | 有機発光ダイオード駆動回路及びそれを用いたディスプレイ装置 |
| JP2006284798A (ja) * | 2005-03-31 | 2006-10-19 | Sanyo Electric Co Ltd | 表示装置及び表示装置の駆動方法 |
| JP2006309155A (ja) * | 2005-01-31 | 2006-11-09 | Toshiba Matsushita Display Technology Co Ltd | 表示装置、アレイ基板、及び表示装置の駆動方法 |
| US7330179B2 (en) | 2002-10-21 | 2008-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method thereof |
| JP2008310361A (ja) * | 2008-09-08 | 2008-12-25 | Seiko Epson Corp | 電気光学装置、及び電子機器 |
| US7847793B2 (en) | 2005-12-08 | 2010-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Control circuit of display device, and display device and electronic appliance incorporating the same |
| JP2012027479A (ja) * | 2000-04-19 | 2012-02-09 | Semiconductor Energy Lab Co Ltd | 発光装置及び電子機器 |
| US8159478B2 (en) | 2004-09-27 | 2012-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device using the same |
| JP2013080233A (ja) * | 2002-01-18 | 2013-05-02 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US8659521B2 (en) | 2005-10-21 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device having a plurality of driving transistors and a light emitting element and method for driving the same |
| JP2014044958A (ja) * | 2013-11-01 | 2014-03-13 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| JP2014197558A (ja) * | 2002-01-24 | 2014-10-16 | 株式会社半導体エネルギー研究所 | 発光装置 |
| CN113889025A (zh) * | 2020-07-02 | 2022-01-04 | 晶门科技（中国）有限公司 | 用于驱动无源矩阵led显示器的方法 |
| JP2022126652A (ja) * | 2011-11-29 | 2022-08-30 | 株式会社半導体エネルギー研究所 | 表示装置、電子機器 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10319908A (ja) * | 1997-04-14 | 1998-12-04 | Sarnoff Corp | アクティブマトリックス有機発光ダイオード（ａｍｏｌｅｄ）の表示ピクセル構造とそのためのデータロード／発光回路 |
| JPH10333641A (ja) * | 1997-05-29 | 1998-12-18 | Casio Comput Co Ltd | 表示装置及びその駆動方法 |
| JP2001060076A (ja) * | 1999-06-17 | 2001-03-06 | Sony Corp | 画像表示装置 |
-
2001
- 2001-04-18 JP JP2001119608A patent/JP2002006808A/ja not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10319908A (ja) * | 1997-04-14 | 1998-12-04 | Sarnoff Corp | アクティブマトリックス有機発光ダイオード（ａｍｏｌｅｄ）の表示ピクセル構造とそのためのデータロード／発光回路 |
| JPH10333641A (ja) * | 1997-05-29 | 1998-12-18 | Casio Comput Co Ltd | 表示装置及びその駆動方法 |
| JP2001060076A (ja) * | 1999-06-17 | 2001-03-06 | Sony Corp | 画像表示装置 |
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9443461B2 (en) | 2000-04-19 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and method of driving the same |
| JP2012027479A (ja) * | 2000-04-19 | 2012-02-09 | Semiconductor Energy Lab Co Ltd | 発光装置及び電子機器 |
| JP2013080233A (ja) * | 2002-01-18 | 2013-05-02 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US10978613B2 (en) | 2002-01-18 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US8723760B2 (en) | 2002-01-18 | 2014-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| JP2014197558A (ja) * | 2002-01-24 | 2014-10-16 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US9627459B2 (en) | 2002-01-24 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device having sealing material |
| US9312323B2 (en) | 2002-01-24 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device having insulator between pixel electrodes and auxiliary wiring in contact with the insulator |
| JP2003323157A (ja) * | 2002-02-28 | 2003-11-14 | Semiconductor Energy Lab Co Ltd | 発光装置の駆動方法及び電子機器 |
| US7330179B2 (en) | 2002-10-21 | 2008-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method thereof |
| JP2004361737A (ja) * | 2003-06-05 | 2004-12-24 | Nippon Hoso Kyokai <Nhk> | 有機発光ダイオード駆動回路及びそれを用いたディスプレイ装置 |
| US8159478B2 (en) | 2004-09-27 | 2012-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device using the same |
| JP2006309155A (ja) * | 2005-01-31 | 2006-11-09 | Toshiba Matsushita Display Technology Co Ltd | 表示装置、アレイ基板、及び表示装置の駆動方法 |
| JP2006284798A (ja) * | 2005-03-31 | 2006-10-19 | Sanyo Electric Co Ltd | 表示装置及び表示装置の駆動方法 |
| US8659521B2 (en) | 2005-10-21 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device having a plurality of driving transistors and a light emitting element and method for driving the same |
| US8253717B2 (en) | 2005-12-08 | 2012-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Control circuit of display device, and display device, and display device and electronic appliance incorporating the same |
| US8004510B2 (en) | 2005-12-08 | 2011-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Control circuit of display device, and display device, and display device and electronic appliance incorporating the same |
| US7847793B2 (en) | 2005-12-08 | 2010-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Control circuit of display device, and display device and electronic appliance incorporating the same |
| JP2008310361A (ja) * | 2008-09-08 | 2008-12-25 | Seiko Epson Corp | 電気光学装置、及び電子機器 |
| JP2022126652A (ja) * | 2011-11-29 | 2022-08-30 | 株式会社半導体エネルギー研究所 | 表示装置、電子機器 |
| JP7250981B2 (ja) | 2011-11-29 | 2023-04-03 | 株式会社半導体エネルギー研究所 | 表示装置、電子機器 |
| JP7446502B2 (ja) | 2011-11-29 | 2024-03-08 | 株式会社半導体エネルギー研究所 | 表示装置、電子機器 |
| JP7612078B2 (ja) | 2011-11-29 | 2025-01-10 | 株式会社半導体エネルギー研究所 | 表示装置、電子機器 |
| JP2014044958A (ja) * | 2013-11-01 | 2014-03-13 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| CN113889025A (zh) * | 2020-07-02 | 2022-01-04 | 晶门科技（中国）有限公司 | 用于驱动无源矩阵led显示器的方法 |
| CN113889025B (zh) * | 2020-07-02 | 2024-05-10 | 晶门科技（中国）有限公司 | 用于驱动无源矩阵led显示器的方法 |
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