JP2001520751A - 多プローブ形試験用ヘッド - Google Patents
多プローブ形試験用ヘッドInfo
- Publication number
- JP2001520751A JP2001520751A JP53883799A JP53883799A JP2001520751A JP 2001520751 A JP2001520751 A JP 2001520751A JP 53883799 A JP53883799 A JP 53883799A JP 53883799 A JP53883799 A JP 53883799A JP 2001520751 A JP2001520751 A JP 2001520751A
- Authority
- JP
- Japan
- Prior art keywords
- probe
- test head
- field emission
- carrier
- strip conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000523 sample Substances 0.000 title claims abstract description 95
- 238000012360 testing method Methods 0.000 title claims abstract description 39
- 238000001459 lithography Methods 0.000 claims abstract description 5
- 239000000654 additive Substances 0.000 claims abstract description 4
- 230000000996 additive effect Effects 0.000 claims abstract description 4
- 239000004020 conductor Substances 0.000 claims description 28
- 238000005259 measurement Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 8
- 230000003321 amplification Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000004651 near-field scanning optical microscopy Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- NHWNVPNZGGXQQV-UHFFFAOYSA-J [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O NHWNVPNZGGXQQV-UHFFFAOYSA-J 0.000 claims description 2
- 230000006698 induction Effects 0.000 claims description 2
- 238000005329 nanolithography Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 claims description 2
- 238000013459 approach Methods 0.000 claims 2
- 230000000630 rising effect Effects 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000013013 elastic material Substances 0.000 claims 1
- 238000007689 inspection Methods 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 description 5
- 230000002950 deficient Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
- G01Q30/02—Non-SPM analysing devices, e.g. SEM [Scanning Electron Microscope], spectrometer or optical microscope
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/02—Multiple-type SPM, i.e. involving more than one SPM techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/10—STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes
- G01Q60/16—Probes, their manufacture, or their related instrumentation, e.g. holders
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/18—SNOM [Scanning Near-Field Optical Microscopy] or apparatus therefor, e.g. SNOM probes
- G01Q60/22—Probes, their manufacture, or their related instrumentation, e.g. holders
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/46—SCM [Scanning Capacitance Microscopy] or apparatus therefor, e.g. SCM probes
- G01Q60/48—Probes, their manufacture, or their related instrumentation, e.g. holders
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/50—MFM [Magnetic Force Microscopy] or apparatus therefor, e.g. MFM probes
- G01Q60/54—Probes, their manufacture, or their related instrumentation, e.g. holders
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/08—Probe characteristics
- G01Q70/10—Shape or taper
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y80/00—Products made by additive manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/86—Scanning probe structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/86—Scanning probe structure
- Y10S977/866—Scanning capacitance probe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/86—Scanning probe structure
- Y10S977/868—Scanning probe structure with optical means
- Y10S977/869—Optical microscope
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/86—Scanning probe structure
- Y10S977/874—Probe tip array
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/901—Manufacture, treatment, or detection of nanostructure having step or means utilizing electromagnetic property, e.g. optical, x-ray, electron beamm
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
- Tests Of Electronic Circuits (AREA)
- Filters And Equalizers (AREA)
- Monitoring And Testing Of Exchanges (AREA)
- Two-Way Televisions, Distribution Of Moving Picture Or The Like (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.集積電気回路の検査を非接触方式で行うために走査形プローブ顕微鏡を使 用する方法において、 3次元加法リソグラフィによって製造されたプローブ(3〜6)からなるグル ープの中に、回路配線を走査するラスタ走査間力プローブとして、少なくとも1 つの電気的に絶縁された先端の尖ったボディ(3)を加え、信号パルスの測定用 に、少なくとも1つの静電容量式プローブ(4)を加え、そして電流測定用に、 少なくとも1つの磁場感応性プローブ(6)を加え、並びに電界放出プローブと して、少なくとも1つの先端が尖った導体(5)を加えてから、このプローブグ ループをキャリヤ(2)上に配置して、このプローブ(3〜6)をプローブグル ープの上に位置する中心の1箇所に向けて指向させ、そして導電性プローブ(5 、6)および静電容量式プローブ(4)の脚端部を、接続のためにキャリヤ(2 )の上にある導電構造をした測定回路に結合させることを特徴とする試験用ヘッ ド。 2.ラスタ走査間力プローブ(3)が、他のプローブ(4、5、6)より高い ことを特徴とする請求項1に記載の試験用ヘッド。 3.プローブ本体の最大直径が、100ナノメートル程度の範囲にあることを 特徴とする前記請求項の何れか1項に記載の試験用ヘッド。 4.先が尖ったプローブの先端部が、円すい台状をなし、開口角が10度程度 の範囲、そして先端部の直径が10ナノメートル程度の範囲にあることを特徴と する請求項1に記載の試験用ヘッド。 5.プローブの長さが、1マイクロメートル程度の範囲にあることを特徴とす る前記請求項の何れか1項に記載の試験用ヘッド。 6.主要伸び方向におけるキャリヤ(2)の寸法が、1マイクロメートル程度 の範囲にあることを特徴とする請求項1に記載の試験用ヘッド。 7.増幅回路が、プローブから発する測定信号を増幅するために、プローブの 直ぐ近傍において3次元ナノリソグラフィによって作製された電気的増幅管と共 に、キャリヤ上に配置されていることを特徴とする前記請求項の何れか1項に記 載の試験用ヘッド。 8.キャリヤ(2)が、亜硝酸ケイ素からなるピラミッド形状の円すい台であ ることを特徴とする前記請求項の何れか1項に記載の試験用ヘッド。 9.ラスタ走査間力プローブ(3)が、高弾性物質からなることを特徴とする 前記請求項の何れか1項に記載の試験用ヘッド。 10.静電容量式プローブ(4)が、導電性のコアであり、そして絶縁性を持 ち、電気的に接続するとき静電容量が生じる脚端部を有することを特徴とする請 求項1に記載の試験用ヘッド。 11.電界放出プローブ(5)が、導電性のコア、そして先端部、並びに導電 性の先端部が突出する絶縁性のマントルを有することを特徴とする請求項1に記 載の試験用ヘッド。 12.磁場感応性プローブ(6)が、その両末端においてキャリヤ(2)と結 合し、導電性物質からなり、垂直に立ち上がるアーチとして作製されている誘導 スプールであることを特徴とする請求項1に記載の試験用ヘッド。 13.磁場感応性プローブが、銅およびコバルトを優先する物質からなる層を 交互に配置して作られ、垂直に立ち上がる磁気抵抗性のアーチから形成され、そ のアーチの両末端部が、キャリヤと結合していることを特徴とする請求項1に記 載の試験用ヘッド。 14.電界放出プローブ(5)の、ラスタ走査間力プローブ(3)に対する高 さの差が、じかに測定され、測定箇所においてラスタ走査間力プローブ(3)が 、集積回路と接触するときに、電界放出プローブ(5)に加えた電圧によって、 電界放出電流が全く流れないかまたは定義された量だけ流れることを特徴とする 請求項1に記載の試験用ヘッド。 15.プローブグループが、回路における光学信号のカップリングおよびデカ ップリングを目的として光学近傍界を伝送するために、そして回路構成物質を分 光学的に調査するために、さらに、少なくとも1つの光伝導性プローブを有し、 これが光伝導性物質から構成され、そしてその周囲を光反射性の層が囲むことを 特徴とする請求項1に記載の試験用ヘッド。 16.前記請求項の何れか1項を用いて、試験用ヘッドを装着した走査形プロ ーブ顕微鏡を使用して、集積回路の検査を行うための試験用ヘッドを調整する場 合に、 ラスタ走査間力プローブ(3)が、非接触的に集積回路上を定められた測定箇 所まで移動し、そしてラスタ走査間力プローブ(3)が、測定箇所の上で集積回 路に接近し、この操作が、ラスタ走査間力プローブ(3)と集積回路の間に働く 力が、定められた値に達するまで続けられることを特徴とする方法。 17.集積回路のストリップ導体に、本発明による電界放出プローブ(5)を 使用して電荷の衝撃を与える場合に、 電界放出プローブ(5)が、湿気を有する空気に接して作動し、または水を含 むフィルムで覆われ、そして電界放出プローブ(5)が、集積回路の帯電してい るストリップ導体に接近し、電界放出プローブに電圧をかけることによって、フ ィルムからOH-イオンが分離され、これがストリップ導体に移行して、その結 果、ストリップ導体を負に帯電させることを特徴とする方法。 18.電界放出プローブ(5)が、ストリップ導体を負に帯電させた後から、 次のストリップ導体まで移動して、そして逆電圧をかけられ、これによりストリ ップ導体は、フィルムから分離されたH3O+イオンによって正に帯電し、その結 果、さらに、隣接するストリップ導体の帯電が、異なる極性を示すように帯電す ることを特徴とする請求項17に記載の試験用ヘッド。 19.ラスタ走査間力プローブが、光学近傍界先端部(SNOM)を有し、こ のSNOM先端部(走査形近傍界光学顕微鏡)から光が放出され、この光によっ て隣接するストリップ導体の物質から光電子が放出されるために、放出された放 射の分光特性を調べることによって、ストリップ導体の材質を推測することがで きることを特徴とする前記請求項の何れか1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19803452 | 1998-01-30 | ||
DE19803452.0 | 1998-01-30 | ||
PCT/EP1999/000069 WO1999039215A1 (de) | 1998-01-30 | 1999-01-08 | Vielsondentestkopf |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2001520751A true JP2001520751A (ja) | 2001-10-30 |
JP4327263B2 JP4327263B2 (ja) | 2009-09-09 |
Family
ID=7856040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53883799A Expired - Fee Related JP4327263B2 (ja) | 1998-01-30 | 1999-01-08 | 多プローブ形試験用ヘッド |
Country Status (7)
Country | Link |
---|---|
US (1) | US6426499B1 (ja) |
EP (1) | EP0979414B1 (ja) |
JP (1) | JP4327263B2 (ja) |
AT (1) | ATE338278T1 (ja) |
CA (1) | CA2281932A1 (ja) |
DE (1) | DE59913814D1 (ja) |
WO (1) | WO1999039215A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010243377A (ja) * | 2009-04-08 | 2010-10-28 | Mitsubishi Electric Corp | 走査型プローブ光電子収量分光顕微法および走査型プローブ光電子収量分光顕微鏡 |
CN102866266A (zh) * | 2012-09-07 | 2013-01-09 | 上海交通大学 | 三维微驱四电极可置换探头 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100634923B1 (ko) * | 2002-01-25 | 2006-10-17 | 가부시키가이샤 어드밴티스트 | 프로브 카드 및 프로브 카드의 제조 방법 |
JP2006504136A (ja) | 2002-10-21 | 2006-02-02 | ナノインク インコーポレーティッド | ナノメートル・スケール設計構造、その製造方法および装置、マスク修復、強化、および製造への適用 |
US7764076B2 (en) * | 2007-02-20 | 2010-07-27 | Centipede Systems, Inc. | Method and apparatus for aligning and/or leveling a test head |
CN102901471B (zh) * | 2011-07-26 | 2015-06-03 | 中国科学院物理研究所 | 纳米图形化和超宽频电磁特性测量系统 |
US9170273B2 (en) * | 2013-12-09 | 2015-10-27 | Globalfoundries U.S. 2 Llc | High frequency capacitance-voltage nanoprobing characterization |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5171992A (en) * | 1990-10-31 | 1992-12-15 | International Business Machines Corporation | Nanometer scale probe for an atomic force microscope, and method for making same |
KR950012094A (ko) | 1993-10-04 | 1995-05-16 | 가나이 쯔또무 | 미소부 물성정보 측정장치 |
DE19504552A1 (de) | 1995-02-11 | 1996-08-14 | Inst Mikrotechnik Mainz Gmbh | Verfahren zur Herstellung einer metallischen Abtastvorrichtung zur kombinierten Untersuchung von elektronischen, magnetischen und topographischen Strukturen mit Auflösung im submicron-Bereich |
US6014032A (en) * | 1997-09-30 | 2000-01-11 | International Business Machines Corporation | Micro probe ring assembly and method of fabrication |
-
1999
- 1999-01-08 US US09/402,256 patent/US6426499B1/en not_active Expired - Lifetime
- 1999-01-08 WO PCT/EP1999/000069 patent/WO1999039215A1/de active IP Right Grant
- 1999-01-08 CA CA002281932A patent/CA2281932A1/en not_active Abandoned
- 1999-01-08 EP EP99903611A patent/EP0979414B1/de not_active Expired - Lifetime
- 1999-01-08 AT AT99903611T patent/ATE338278T1/de not_active IP Right Cessation
- 1999-01-08 JP JP53883799A patent/JP4327263B2/ja not_active Expired - Fee Related
- 1999-01-08 DE DE59913814T patent/DE59913814D1/de not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010243377A (ja) * | 2009-04-08 | 2010-10-28 | Mitsubishi Electric Corp | 走査型プローブ光電子収量分光顕微法および走査型プローブ光電子収量分光顕微鏡 |
CN102866266A (zh) * | 2012-09-07 | 2013-01-09 | 上海交通大学 | 三维微驱四电极可置换探头 |
CN102866266B (zh) * | 2012-09-07 | 2014-08-06 | 上海交通大学 | 三维微驱四电极可置换探头 |
Also Published As
Publication number | Publication date |
---|---|
EP0979414B1 (de) | 2006-08-30 |
ATE338278T1 (de) | 2006-09-15 |
US6426499B1 (en) | 2002-07-30 |
EP0979414A1 (de) | 2000-02-16 |
DE59913814D1 (de) | 2006-10-12 |
JP4327263B2 (ja) | 2009-09-09 |
WO1999039215A1 (de) | 1999-08-05 |
CA2281932A1 (en) | 1999-08-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2574942B2 (ja) | 電気的探針 | |
US20060152232A1 (en) | Method and apparatus for inspection of high frequency and microwave hybrid circuits and printed circuit boards | |
KR100978699B1 (ko) | 전기적 피드백 검출 시스템 및 멀티 포인트 테스팅 장치 | |
JP2001522045A (ja) | 静電気力顕微鏡用のカンチレバーを備えた静電気力検出器 | |
TW201504630A (zh) | 使用自我檢知型懸臂的掃描型探針顯微鏡式探針裝置 | |
JP4327263B2 (ja) | 多プローブ形試験用ヘッド | |
US7187166B2 (en) | Electrical property evaluation apparatus | |
US6614243B2 (en) | Measurement probe for detecting electrical signals in an integrated semiconductor circuit | |
US4855673A (en) | Electron beam apparatus | |
Dobson et al. | New methods for calibrated scanning thermal microscopy (SThM) | |
US6653629B2 (en) | Specimen inspection instrument | |
Haddadi et al. | Combined scanning microwave and electron microscopy: A novel toolbox for hybrid nanoscale material analysis | |
JP3252410B2 (ja) | 微小領域物性測定装置 | |
US6825645B2 (en) | Non-resonant microwave imaging probe | |
JPH08160109A (ja) | 電子素子評価装置 | |
Haddadi et al. | Near-field scanning millimeter-wave microscope combined with a scanning electron microscope | |
JP4598300B2 (ja) | 走査型プローブ顕微鏡およびそれによる物性測定方法 | |
US6208151B1 (en) | Method and apparatus for measurement of microscopic electrical characteristics | |
JPS6089050A (ja) | ストロボ走査電子顕微鏡 | |
WO2001004653A9 (en) | Method and apparatus for sub-micron imaging and probing on probe station | |
Bae et al. | A new bifunctional topography and current probe for scanning force microscope testing of integrated circuits | |
JP3192832B2 (ja) | 電気計測装置のプローブ | |
KR20230014634A (ko) | 방전 부위 검출 방법 및 방전 부위 검출 장치 | |
WO2023248000A1 (en) | Hybrid near-field scanning microwave microscope | |
WO2004057355A1 (en) | A method and apparatus for inspection of high frequency and microwave hybrid circuits and printed circuit boards |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060106 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080325 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080613 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081014 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090108 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090512 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090611 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120619 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120619 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130619 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |