JP2001511317A5 - - Google Patents
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- Publication number
- JP2001511317A5 JP2001511317A5 JP1999530417A JP53041799A JP2001511317A5 JP 2001511317 A5 JP2001511317 A5 JP 2001511317A5 JP 1999530417 A JP1999530417 A JP 1999530417A JP 53041799 A JP53041799 A JP 53041799A JP 2001511317 A5 JP2001511317 A5 JP 2001511317A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Description
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9726094.7A GB9726094D0 (en) | 1997-12-10 | 1997-12-10 | Thin film transistors and electronic devices comprising such |
| GB9726094.7 | 1997-12-10 | ||
| PCT/IB1998/001815 WO1999030369A2 (en) | 1997-12-10 | 1998-11-13 | Thin film transistors and electronic devices comprising such |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001511317A JP2001511317A (ja) | 2001-08-07 |
| JP2001511317A5 true JP2001511317A5 (ja) | 2006-04-06 |
Family
ID=10823387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53041799A Abandoned JP2001511317A (ja) | 1997-12-10 | 1998-11-13 | 薄膜トランジスタ及びこの薄膜トランジスタを具える電子デバイス |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6064091A (ja) |
| EP (1) | EP0974164A2 (ja) |
| JP (1) | JP2001511317A (ja) |
| KR (1) | KR100621488B1 (ja) |
| GB (1) | GB9726094D0 (ja) |
| WO (1) | WO1999030369A2 (ja) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6704133B2 (en) | 1998-03-18 | 2004-03-09 | E-Ink Corporation | Electro-optic display overlays and systems for addressing such displays |
| US7075502B1 (en) | 1998-04-10 | 2006-07-11 | E Ink Corporation | Full color reflective display with multichromatic sub-pixels |
| US7030412B1 (en) * | 1999-05-05 | 2006-04-18 | E Ink Corporation | Minimally-patterned semiconductor devices for display applications |
| JP2001135851A (ja) * | 1999-11-05 | 2001-05-18 | Minolta Co Ltd | 光電変換素子および固体撮像装置 |
| GB2358081B (en) * | 2000-01-07 | 2004-02-18 | Seiko Epson Corp | A thin-film transistor and a method for maufacturing thereof |
| GB2358084B (en) * | 2000-01-07 | 2004-02-18 | Seiko Epson Corp | Semiconductor transistor |
| US6509581B1 (en) * | 2000-03-29 | 2003-01-21 | Delta Optoelectronics, Inc. | Structure and fabrication process for an improved polymer light emitting diode |
| US7893435B2 (en) | 2000-04-18 | 2011-02-22 | E Ink Corporation | Flexible electronic circuits and displays including a backplane comprising a patterned metal foil having a plurality of apertures extending therethrough |
| US6825068B2 (en) | 2000-04-18 | 2004-11-30 | E Ink Corporation | Process for fabricating thin film transistors |
| WO2002050917A1 (en) | 2000-12-21 | 2002-06-27 | Koninklijke Philips Electronics N.V. | Thin film transistors |
| US7339205B2 (en) * | 2004-06-28 | 2008-03-04 | Nitronex Corporation | Gallium nitride materials and methods associated with the same |
| KR101090252B1 (ko) * | 2004-09-24 | 2011-12-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그의 제조 방법 |
| JP5243686B2 (ja) * | 2005-04-28 | 2013-07-24 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタ |
| US7411298B2 (en) * | 2005-08-17 | 2008-08-12 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices |
| US7691691B1 (en) * | 2006-05-23 | 2010-04-06 | Kovio, Inc. | Semiconductor device and methods for making the same |
| CN102007597B (zh) * | 2008-04-17 | 2014-02-19 | 应用材料公司 | 低温薄膜晶体管工艺、装置特性和装置稳定性改进 |
| TWI379142B (en) * | 2008-07-17 | 2012-12-11 | Au Optronics Corp | Thin film transistor substrate and thin film transistor of display panel and method of making the same |
| CN101330106B (zh) * | 2008-07-28 | 2010-06-02 | 友达光电股份有限公司 | 显示面板的薄膜晶体管基板与薄膜晶体管及其制作方法 |
| KR101824124B1 (ko) | 2009-11-28 | 2018-02-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2011074392A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI458098B (zh) * | 2009-12-31 | 2014-10-21 | Au Optronics Corp | 薄膜電晶體 |
| CN102790056B (zh) * | 2012-08-13 | 2014-12-10 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、goa单元制作方法及显示装置 |
| CN108321152B (zh) * | 2018-04-04 | 2024-10-18 | 京东方科技集团股份有限公司 | 指纹识别传感器及其制备方法以及指纹识别设备 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4341569A (en) * | 1979-07-24 | 1982-07-27 | Hughes Aircraft Company | Semiconductor on insulator laser process |
| US4509990A (en) * | 1982-11-15 | 1985-04-09 | Hughes Aircraft Company | Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates |
| US4617066A (en) * | 1984-11-26 | 1986-10-14 | Hughes Aircraft Company | Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing |
| DE3685623T2 (de) * | 1985-10-04 | 1992-12-24 | Hosiden Corp | Duennfilmtransistor und verfahren zu seiner herstellung. |
| US4766482A (en) * | 1986-12-09 | 1988-08-23 | General Electric Company | Semiconductor device and method of making the same |
| US4762398A (en) * | 1987-01-26 | 1988-08-09 | Hosiden Electronics Co., Ltd. | Pixel transistor free of parasitic capacitance fluctuations from misalignment |
| US4797721A (en) * | 1987-04-13 | 1989-01-10 | General Electric Company | Radiation hardened semiconductor device and method of making the same |
| US4988638A (en) * | 1988-11-07 | 1991-01-29 | Xerox Corporation | Method of fabrication a thin film SOI CMOS device |
| GB2245741A (en) * | 1990-06-27 | 1992-01-08 | Philips Electronic Associated | Active matrix liquid crystal devices |
| US5155571A (en) * | 1990-08-06 | 1992-10-13 | The Regents Of The University Of California | Complementary field effect transistors having strained superlattice structure |
| US5355002A (en) * | 1993-01-19 | 1994-10-11 | Industrial Technology Research Institute | Structure of high yield thin film transistors |
| US5323040A (en) * | 1993-09-27 | 1994-06-21 | North Carolina State University At Raleigh | Silicon carbide field effect device |
| US5587591A (en) * | 1993-12-29 | 1996-12-24 | General Electric Company | Solid state fluoroscopic radiation imager with thin film transistor addressable array |
| US5532180A (en) * | 1995-06-02 | 1996-07-02 | Ois Optical Imaging Systems, Inc. | Method of fabricating a TFT with reduced channel length |
-
1997
- 1997-12-10 GB GBGB9726094.7A patent/GB9726094D0/en not_active Ceased
-
1998
- 1998-11-13 WO PCT/IB1998/001815 patent/WO1999030369A2/en not_active Application Discontinuation
- 1998-11-13 KR KR1019997007175A patent/KR100621488B1/ko not_active IP Right Cessation
- 1998-11-13 EP EP98951630A patent/EP0974164A2/en not_active Withdrawn
- 1998-11-13 JP JP53041799A patent/JP2001511317A/ja not_active Abandoned
- 1998-12-10 US US09/209,085 patent/US6064091A/en not_active Expired - Fee Related