JP2001508597A5 - - Google Patents

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Publication number
JP2001508597A5
JP2001508597A5 JP1998524009A JP52400998A JP2001508597A5 JP 2001508597 A5 JP2001508597 A5 JP 2001508597A5 JP 1998524009 A JP1998524009 A JP 1998524009A JP 52400998 A JP52400998 A JP 52400998A JP 2001508597 A5 JP2001508597 A5 JP 2001508597A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP1998524009A
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English (en)
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JP2001508597A (ja
Filing date
Publication date
Priority claimed from US08/752,112 external-priority patent/US5895583A/en
Application filed filed Critical
Publication of JP2001508597A publication Critical patent/JP2001508597A/ja
Publication of JP2001508597A5 publication Critical patent/JP2001508597A5/ja
Ceased legal-status Critical Current

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Figure 2001508597
Figure 2001508597
Figure 2001508597
JP52400998A 1996-11-20 1997-11-20 エピタキシャル成長用炭化珪素ウェーハ製造方法 Ceased JP2001508597A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/752,112 1996-11-20
US08/752,112 US5895583A (en) 1996-11-20 1996-11-20 Method of preparing silicon carbide wafers for epitaxial growth
PCT/US1997/021883 WO1998022978A1 (en) 1996-11-20 1997-11-20 Method of preparing silicon carbide wafers for epitaxial growth

Publications (2)

Publication Number Publication Date
JP2001508597A JP2001508597A (ja) 2001-06-26
JP2001508597A5 true JP2001508597A5 (ja) 2005-06-16

Family

ID=25024926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52400998A Ceased JP2001508597A (ja) 1996-11-20 1997-11-20 エピタキシャル成長用炭化珪素ウェーハ製造方法

Country Status (4)

Country Link
US (1) US5895583A (ja)
EP (1) EP0960436A1 (ja)
JP (1) JP2001508597A (ja)
WO (1) WO1998022978A1 (ja)

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DE19722679A1 (de) * 1997-05-30 1998-12-03 Wacker Siltronic Halbleitermat Scheibenhalter und Verfahren zur Herstellung einer Halbleiterscheibe
JP3099002B1 (ja) * 1999-06-25 2000-10-16 茂徳科技股▲ふん▼有限公司 ２段階化学機械研磨方法
US6399499B1 (en) * 1999-09-14 2002-06-04 Jeong Gey Lee Method for fabricating an electrode of a plasma chamber
JP4549471B2 (ja) * 2000-01-18 2010-09-22 株式会社ディスコ 板状物研削装置及び板状物研削方法
US20020187427A1 (en) * 2001-05-18 2002-12-12 Ulrich Fiebag Additive composition for both rinse water recycling in water recycling systems and simultaneous surface treatment of lithographic printing plates
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
TW574086B (en) * 2001-11-27 2004-02-01 Nanya Technology Corp On-pipe vibrator
US7379203B2 (en) * 2002-03-22 2008-05-27 Laser Substrates, Inc. Data capture during print process
FR2843061B1 (fr) * 2002-08-02 2004-09-24 Soitec Silicon On Insulator Procede de polissage de tranche de materiau
JPWO2004041740A1 (ja) * 2002-11-07 2006-03-09 Hoya株式会社 情報記録媒体用基板ならびに情報記録媒体およびその製造方法
FR2857895B1 (fr) * 2003-07-23 2007-01-26 Soitec Silicon On Insulator Procede de preparation de surface epiready sur films minces de sic
US7018554B2 (en) * 2003-09-22 2006-03-28 Cree, Inc. Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices
DE102004010379A1 (de) * 2004-03-03 2005-09-22 Schott Ag Verfahren zur Herstellung von Wafern mit defektarmen Oberflächen, die Verwendung solcher Wafer und damit erhaltene elektronische Bauteile
US7118458B2 (en) * 2004-08-23 2006-10-10 Matsushita Electric Industrial Co., Ltd. Method for polishing silicon carbide crystal substrate
US20060108325A1 (en) * 2004-11-19 2006-05-25 Everson William J Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
DE102005024073A1 (de) * 2005-05-25 2006-11-30 Siltronic Ag Halbleiter-Schichtstruktur und Verfahren zur Herstellung einer Halbleiter-Schichtstruktur
EP1772901B1 (en) * 2005-10-07 2012-07-25 Rohm and Haas Electronic Materials, L.L.C. Wafer holding article and method for semiconductor processing
KR101267982B1 (ko) * 2011-12-13 2013-05-27 삼성코닝정밀소재 주식회사 반도체 기판의 연마방법 및 반도체 기판의 연마장치
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) * 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
CN105500120B (zh) * 2015-11-25 2018-05-22 厦门市三安光电科技有限公司 一种晶圆研磨的控制方法

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US3956092A (en) * 1971-02-19 1976-05-11 Aktiebolaget C. E. Johansson Method of making measuring elements such as gauge blocks
US4475981A (en) * 1983-10-28 1984-10-09 Ampex Corporation Metal polishing composition and process
US4599827A (en) * 1985-06-24 1986-07-15 The United States Of America As Represented By The Secretary Of The Army Metallographic preparation of particulate filled aluminum metal matrix composite material
US5165981A (en) * 1987-03-20 1992-11-24 Sumitomo Electric Industries, Ltd. Ceramic substrate and preparation of the same
US4837923A (en) * 1988-04-29 1989-06-13 Magnetic Peripherals Inc. Surface finishing for magnetic transducers
US4946547A (en) * 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5149338A (en) * 1991-07-22 1992-09-22 Fulton Kenneth W Superpolishing agent, process for polishing hard ceramic materials, and polished hard ceramics
JPH0774839B2 (ja) * 1991-09-30 1995-08-09 東芝セラミックス株式会社 Ｓｏｒ用ミラー
JPH06263595A (ja) * 1993-03-10 1994-09-20 Canon Inc ダイヤモンド被覆部材及びその製造方法
US5300130A (en) * 1993-07-26 1994-04-05 Saint Gobain/Norton Industrial Ceramics Corp. Polishing material
JP2849533B2 (ja) * 1993-08-18 1999-01-20 長野電子工業株式会社 ウェーハの研磨方法
JPH08323604A (ja) * 1995-05-31 1996-12-10 Canon Inc ＳｉＣの研磨方法および光学素子の製造方法
US5718618A (en) * 1996-02-09 1998-02-17 Wisconsin Alumni Research Foundation Lapping and polishing method and apparatus for planarizing photoresist and metal microstructure layers

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