JP2001345475A - Bidirectional light emitting/receiving device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress electrical interference between a light emitting element and a light receiving element through wiring. SOLUTION: Semiconductor laser elements 1 and PD2 provided, respectively, on a silicon substrate 8 and a glass substrate 9 disposed in a package 10 are coupled optically with optical waveguides, i.e., optical fibers 3, provided on the silicon substrate 8 and the glass substrate 9, respectively. The package 10 is provided with a plurality of leads 71-78 connected electrically with respective electrodes of the semiconductor laser elements 1 and PD2 through wiring. A gold wire 62 being connected with one electrode of the semiconductor laser element 1 and a gold wire 65 being connected with one electrode of the PD2 are connected, respectively, with the six lead 76 and the first lead 71 such that they make an appropriate angle.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an integrated light receiving and emitting device in which a light emitting element and a light receiving element are integrated, and more particularly, to a bidirectional device capable of reducing electrical interference between the light emitting element and the light receiving element. The present invention relates to an integrated light receiving and emitting device.

[0002]

2. Description of the Related Art Since current telephone lines can transmit only data of about several tens of kilobits per second, ordinary users can use optical communication only on the trunk of a communication system in order to enjoy higher-speed data communication services. In addition, it is demanded to spread to general subscriber communication systems. In an optical communication system, a communication electric signal is converted into signal light by a semiconductor laser element provided on a transmission side, the converted signal light is transmitted by an optical fiber, and the signal light is electrically converted by a photodiode provided on a reception side. Convert to a signal. In such an optical communication system, in order to effectively use an optical fiber as a transmission path, a configuration in which signal light is bidirectionally transmitted by one optical fiber, a plurality of electric signals are converted into signal lights having different wavelengths, respectively. A configuration is adopted in which they are multiplexed (wavelength multiplexed) and transmitted by a single optical fiber.

In two-way communication and wavelength division multiplexing communication, it is necessary to integrate a light emitting device having a light emitting element and a light receiving device having a light receiving element. However, there is a problem in that the light emitting device and the light receiving device are usually manufactured as separate modules and are coupled by an optical coupler, so that the manufacturing cost is high. In the future, in order for two-way optical communication to spread to offices, ordinary homes, and the like, low-cost devices and apparatuses integrating a light-emitting device and a light-receiving device are demanded.

In order to integrate the light emitting device and the light receiving device and mount them in one package, it is necessary to suppress crosstalk due to light interference or electrical interference between the light emitting device and the light receiving device. In particular, the wavelength-multiplexed optical communication, an optical level, -50 dB (10 ⁵ min 1) about, the electrical level, -100 dB (10 ¹⁰ min 1) about a high level of isolation is required.

When the light-emitting device and the light-receiving device are mounted in different packages, the light-emitting device and the light-receiving device are housed in a shield case in the same manner as a normal electric element.
Alternatively, by strengthening each ground line, electromagnetic noise can be suppressed.
Electrical interference between the light emitting device and the light receiving device can be prevented. However, in the integrated light receiving and emitting device in which the light emitting element and the light receiving element are mounted on the same package and integrated, electric crosstalk occurs in which the driving electric signal of the light emitting element directly interferes with the output electric signal of the light receiving element. There is a problem that such electrical crosstalk cannot be sufficiently suppressed.

FIG. 12 shows an example of the configuration of a light emitting and receiving device in which a light emitting element and a light receiving element are integrated.

In this integrated device for bidirectional light receiving and emitting light, a light emitting section 21 provided with a semiconductor laser element 1 as a light emitting element and a photodiode (PD) as a light receiving element are provided in a hollow rectangular package 10. 2) and an optical fiber 3 to which an optical signal is transmitted.

In the package 10, a glass substrate 9 of a light receiving section 22 on which the PD 2 is mounted and a silicon substrate 8 of a light emitting section 21 on which the semiconductor laser element 1 is mounted are arranged along the longitudinal direction of the package 10. Are located. The optical fiber 3 penetrates one end face of the package 10 and is arranged inside the package 10 along a widthwise central portion of the package 10. The optical fiber 3 is supported in a groove provided in the glass substrate 9 of the light receiving unit 22, and one end is located on the silicon substrate 8 of the light emitting unit 21. Therefore, in the glass substrate 9, the optical fiber 3 is an embedded waveguide.

On the silicon substrate 8, the semiconductor laser device 1 is die-bonded. Semiconductor laser element 1
Is disposed substantially at the center of the silicon substrate 8 such that the emission end face of the laser light faces the end face of the optical fiber 3.

FIG. 13 is a detailed cross-sectional view of an optical fiber embedded type waveguide in the PD 2 which is a light receiving element in the package 10. The PD 2 is provided on the upper surface of the glass substrate 9 provided in the package 10. The PD 2 is provided with a light receiving region 12 at the center of the lower surface facing the glass substrate 9. Each end of the PD 2 is positioned on each side of the optical fiber 3 so that the light receiving area 12 is located on the axis of the optical fiber 3 embedded in the glass substrate 9 and straddles the optical fiber 3. Are located in

The P arranged on each side of the optical fiber 3
A pair of conductive bumps 13 in a conductive state are provided on each side portion of the light receiving region 12 in D2, respectively, and the conductive bumps 13 are connected to wiring patterns 53 and 54 provided on the surface of the glass substrate 9. (See FIG. 12). Wire pads 44 and 45 are connected to the wiring patterns 53 and 54, respectively.

As shown in FIG. 13, for example, a laser beam having a wavelength of 1.3 μm is transmitted through an optical fiber 3 supported in a groove provided in a glass substrate 9, and a laser beam having a wavelength of 1.55 μm is transmitted. The filter 11 as an optical splitter that reflects the light toward the upper PD 2 is disposed in an inclined state. Accordingly, an optical signal of 1.55 μm laser light transmitted through the optical fiber 3 is reflected by the filter 11, received by the light receiving region 12 of the PD 2 above the filter, and transmitted through the optical fiber 3. The 1.3 μm laser light is transmitted linearly through the filter 11. As described above, the semiconductor laser element 1 as the light emitting element and the PD 2 as the light receiving element are optically coupled by the optical fiber 3 as an optical waveguide provided with the filter 11 as an optical splitter.

As shown in FIG. 12, first to fourth four leads 71 to 74 are provided on one side of the package 10, and fifth to eighth Are provided. Each lead 7
1 to 78 are each configured in a strip shape, and one end of each is disposed inside the package 10,
The other end is located outside the package 10.

The first to fourth leads 71 to 74 disposed on one side surface of the package 10 are arranged at regular intervals along the direction in which the optical fiber 3 has entered the package 10. The fifth to eighth leads 75 to 78 disposed on the other side surface of the package 10 are the fourth to first leads 74 to 71.
Are arranged facing each other.

One electrode of the semiconductor laser device 1 provided on the silicon substrate 8 is connected via a wiring pattern 51 to a wire pad 41 arranged close to a fourth lead 74 on the upper surface of the silicon substrate 8. Have been.
The other electrode of the semiconductor laser device 1 is connected to a wire pad 42 provided between the semiconductor laser device 1 and a wire pad 43 arranged close to the fifth lead 75 on the upper surface of the silicon substrate 8. Gold wire 6
1 is wire-bonded.

The wire pad 42 and the wire pad 43
Are connected by a wiring pattern 52.

The silicon substrate 8 is located near the fourth lead 74.
Is wire-bonded to the fourth lead 74 by the gold wire 62. Further, the wire pad 43 arranged close to the fifth lead 75 is connected to the fifth lead 75 by the gold wire 63.
Has been wire bonded.

Therefore, the gold wire 62, which is one signal wiring of the semiconductor laser device 1, is connected to the semiconductor laser device 1
Are arranged along the substantially same direction as the gold wire 63 serving as the signal wiring of the other electrode, and are in a state substantially perpendicular to the axis of the optical fiber 3.

P bonded to the upper surface of the glass substrate 9
D2 is a wire pad having a cathode connected to a wire pad 44 arranged close to the second lead 72 via a wiring pattern 53, and an anode connected to a wire pad 44 arranged close to the seventh lead 77. 45 is connected via a wiring pattern 54.

On the upper surface of the glass substrate 9, the wire pad 44 disposed close to the second lead 72 is wire-bonded to the second lead 72 by a gold wire 64. The wire pad 45 arranged close to the seventh lead 77 is wire-bonded to the seventh lead 77 by a gold wire 65.

Therefore, the wiring directions of the gold wires 64 and 65, which are the signal wirings of the PD 2, are also arranged along the substantially same direction, and the optical fibers 3 are arranged in a direction substantially orthogonal to the axis. Has become. As a result, the gold wires 64 and 65 are substantially parallel to the gold wires 61 to 63 that are the signal wires of the semiconductor laser device 1.

[0022]

In the two-way integrated light receiving / emitting device having such a structure, the gold wires 61 to 63 serving as signal wirings of the semiconductor laser device 1 serving as a light emitting device and the signal wires of the PD 2 serving as a light receiving device are provided. The gold wires 64 and 65, which are wirings, are substantially parallel within a relatively long distance in the package 10, and
The driving signals flowing through 1 to 63 are gold wires 64 and 6
5 may cause crosstalk that strongly interferes with the output signal flowing through the output signal.

In particular, since the PD 2 is disposed above the optical fiber 3 which is an optical waveguide and crosses the optical fiber 3, the positive and negative electrodes of the PD 2 are also disposed above the optical fiber 3. It is arranged in a state of crossing the optical fiber 3. Therefore, the gold wires 64 and 65 connected to the respective electrodes of the PD 2 and the second lead 72 and the seventh lead 77 closest to the respective electrodes are wired along the direction orthogonal to the optical fiber 3. Therefore, the gold wires 61 to 63, which are signal wirings of the semiconductor laser element 1, are substantially parallel to each other.

In addition, since the semiconductor laser element 1 and the PD 2 are provided at positions close to each other in the package 10, the signals flowing through the gold wires 61 to 63 and the gold wires 64 and 65 interfere with each other. It is easy to do.

Further, since the electromagnetic wave is not cut off between the semiconductor laser element 1 and the PD 2, the signals flowing through the gold wires 61 to 63 and the gold wires 64 and 65 easily interfere with each other. It is in a state.

FIG. 14 shows the result of measuring the amount of electrical crosstalk between the semiconductor laser device 1 and the PD 2 in the integrated device for bidirectional light reception and emission shown in FIG. In the graph of FIG. 14, the horizontal axis indicates the frequency, and the vertical axis indicates the amount of electrical crosstalk. The crosstalk amount of the integrated device for bidirectional light reception and emission is about -70 to -80 dB, and does not reach the target level of about -100 dB. This is considered because the laser modulation signal is emitted as an electromagnetic wave and electrically interferes with the signal line of the PD 2.

An object of the present invention is to solve such a problem, and an object of the present invention is to provide a bidirectional light receiving / emitting integrated device capable of suppressing electric interference between electric wirings of a light emitting element and a light receiving element. Is to provide.

[0028]

According to a first aspect of the present invention, there is provided a bidirectional light-receiving / emitting integrated device, comprising: a light-emitting element and a light-receiving element provided on a substrate in a package; One optical waveguide disposed on each substrate so as to be coupled and each electrode of the light emitting element and the light receiving element are electrically connected to each other by a plurality of wirings provided on a package. A lead connected to one electrode of the light emitting element and a lead connected to one electrode of the light receiving element so as to have an appropriate angle with each other. Are connected to each other.

Each electrode of the light receiving element is provided on each side of the optical waveguide.

Each electrode of the light receiving element is connected to a pair of leads arranged on one side of the package,
Each electrode of the light emitting element is connected to a pair of leads disposed on the other side of the package.

The positive and negative electrode terminals of the light receiving element are located on one side of the optical waveguide, and are respectively connected to the positive and negative terminal electrodes fixed on the substrate. . A wire is used as the wiring.
The wire is a gold wire. As the wiring, a wiring pattern provided on a substrate is used.

As the wiring, a wire and a wiring pattern are used.

A microstrip line is used as the wiring pattern. The optical waveguide is provided with a reflection filter that reflects light of a predetermined wavelength to a light receiving element provided on a substrate and transmits light of a predetermined wavelength emitted from a light emitting element.

According to the present invention, there is provided a bidirectional integrated light receiving and emitting device, wherein each of the light emitting element and the light receiving element provided on the substrate in the package is connected to each other such that the light emitting element and the light receiving element are optically coupled to each other. And a plurality of leads provided in a package so that each of the electrodes of the light emitting element and the light receiving element is electrically connected to each other by each wiring. A wiring connected to one electrode of the light emitting element and a wiring connected to an electrode of the light receiving element having a polarity different from that of the electrode are respectively connected to leads arranged farthest in the package. It is characterized by having. A wire is used as the wiring. The wire is a gold wire. As the wiring, a wiring pattern provided on a substrate is used.

A wire and a wiring pattern are used as the wiring.

Further, the integrated device for bidirectional light receiving and emitting according to the present invention is arranged such that the light emitting element and the light receiving element provided on the substrate in the package are optically coupled to the light emitting element and the light receiving element, respectively. An optical waveguide is provided on each substrate, and an electromagnetic wave shielding material is disposed between the light emitting element and the light receiving element.

The electromagnetic wave shielding material is a conductive material.

The electromagnetic wave shielding material is a material containing carbon.

Further, the integrated device for bidirectional light reception and light emission according to the present invention is arranged such that the light emitting element and the light receiving element provided on the substrate in the package are optically coupled to the light emitting element and the light receiving element, respectively. A plurality of leads provided in a package so as to be electrically connected by one optical waveguide provided on each substrate, each electrode of the light emitting element and the light receiving element, and each wiring; Wherein a wiring connected to one electrode of the light emitting element and a wiring connected to an electrode of the light receiving element having a polarity different from that of the electrode are grounded via a capacitor. And

[0040]

DESCRIPTION OF THE PREFERRED EMBODIMENTS <First Embodiment> An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic plan view showing an example of an embodiment of a two-way integrated light receiving / emitting device of the present invention. This two-way integrated receiving / emitting device differs from the conventional two-way integrated receiving / emitting device shown in FIGS. 12 and 13 in that the arrangement of gold wires 61 to 65 as signal wirings of the semiconductor laser element 1 and the PD 2 is different. Except for the same configuration,
The details are omitted.

One electrode provided on the lower surface of the semiconductor laser device 1 is connected via a wiring pattern 51 to a wire pad 41 arranged close to the fourth lead 74 on the upper surface of the silicon substrate 8. . The other electrode provided on the upper surface of the semiconductor laser device 1 is connected to a wire provided between the wire pad 43 arranged close to the fifth lead 75 and the semiconductor laser device 1 on the upper surface of the silicon substrate 8. The pad 42 is wire-bonded with a gold wire 61. The wire pad 42 is connected to the wire pad 43 by a wiring pattern 52.

The silicon substrate 8 close to the fourth lead 74
The wire pad 41 arranged on the upper surface of the semiconductor laser device 1 and connected to one electrode of the semiconductor laser device 1 is connected to the sixth lead 76.
Is bonded by a gold wire 62. Further, the wire pad 43 arranged close to the fifth lead 75 is wire-bonded to the fifth lead 75 by the gold wire 63.

Accordingly, the gold wire 62, which is one signal wiring of the semiconductor laser device 1, is connected to the semiconductor laser device 1
With respect to the gold wires 61 and 63, which are the other signal wirings, so as to be inclined at an appropriate angle,
The state is along the diagonal direction of the silicon substrate 8.

P bonded to the upper surface of the glass substrate 9
D2 has a cathode connected to a wire pad 44 disposed close to the second lead 72 via a wiring pattern 53, and an anode connected to a wire pad 44 disposed close to the seventh lead 77. The pad 45 is connected via a wiring pattern 54.

On the upper surface of the glass substrate 9, the wire pad 44 arranged close to the second lead 72 is wire-bonded to the second lead 72 by a gold wire 64. Further, the wire pad 45 arranged close to the seventh lead 77 is wire-bonded to the first lead 71 by the gold wire 65.

Accordingly, the gold wire 65 serving as the signal wiring of the PD 2 extends along the diagonal direction of the glass substrate 9 so that the inclination direction of the gold wire 65 is opposite to the direction of the gold wire 62 serving as the signal wiring of the semiconductor laser device 1. The gold wire 65 and the gold wire 62 are not in the same direction. Thereby, electric crosstalk between the gold wire 65 and the gold wire 62 is reduced.

FIG. 2 shows the measurement results of the amount of electrical crosstalk between the signal light of the semiconductor laser device 1 and the signal light of the PD 2 in the bidirectional integrated light receiving and emitting device having such a configuration. In the graph shown in FIG. 2, the frequency of the signal light is shown on the horizontal axis, and the amount of electrical crosstalk is shown on the vertical axis. The crosstalk amount of the two-way integrated light receiving and emitting device is -90 to -100d.
It is about B and almost at the target level. This is because the laser modulation signal of the semiconductor laser element flowing through the gold wire 62 and the gold wire 6 which is the signal line of the PD 2 are used.
5 due to reduced electrical interference with the signal flowing through 5.

<Second Embodiment> FIG. 3 is a schematic plan view showing another example of the two-way light receiving / emitting integrated device according to the present invention. In this integrated device for two-way light reception and emission, one electrode provided on the lower surface of the semiconductor laser element 1 is connected to the wire pad 41 arranged close to the sixth lead 76 on the upper surface of the silicon substrate 8 by the wiring pattern 51. , And the wiring pattern 51 and the sixth lead 76 are connected by the gold wire 62. As described above, the wire pad 4 close to the sixth lead 76
By arranging 1, the gold wire 62 can be made shorter than in the case of the two-way integrated light receiving and emitting device of FIG. 1 shown in the first embodiment.

The wiring pattern 52 to which the anode of the PD 2 is connected extends along the optical fiber 3.
It is connected to a wire pad 45 arranged on the glass substrate 9. The wire pad 45 is wire-bonded to the first lead 71 by a gold wire 65, which also allows the gold wire 65 to be integrated with the bidirectional light receiving and emitting light of FIG. 1 shown in the first embodiment. It can be shorter and shorter than in the case of the chemical conversion device.

As described above, the gold wire 62 serving as the signal wiring of the semiconductor laser device 1 and the gold wire 65 serving as the signal wiring of the PD 2 are also shortened. Electrical interference generated between the signal wiring and the other signal wiring can be reduced.

<Third Embodiment> In the integrated device for bidirectional light receiving and emitting shown in FIG. 3, a wiring pattern 51 connecting one electrode provided on the lower surface of the semiconductor laser element 1 and the wire pad 41, and a PD 2 Instead of the wiring pattern 52 connecting the wire pad 45 to which the anode is connected, a microstrip line 214 and a microstrip line 215 may be provided as shown in FIG. Then, the microstrip line 214 and the microstrip line 21
5 is designed to be impedance-matched, it is possible to reduce the electric interference due to the electric wiring of the semiconductor laser device 1 and the PD 2 and to improve the transmission characteristics in a higher frequency band.

<Fourth Embodiment> In the two-way integrated device for receiving and emitting light shown in FIGS. 1, 3 and 4, the glass substrate 9
Since the light receiving region 12 is provided at the center of the lower surface facing the glass substrate 9, the PD 2 provided on the upper surface of
Each electrode of the PD 2 is arranged on each side of the optical fiber 3 which is an optical waveguide. Since the wire pad 45 connected to one electrode and the first lead 71 are connected by the gold wire 65, the gold wire 65 crosses the optical fiber 3 and is wired in the air over a long distance.

FIG. 5 is a schematic plan view showing still another example of the embodiment of the bidirectional light receiving / emitting integrated device of the present invention.
In this integrated device for bidirectional light reception and emission, each electrode of the PD 2 arranged to cross the optical fiber 3 is arranged on one side of the optical fiber 3.

FIG. 6A is a bottom view of the PD 2 and FIG.
(B) is a plan view of the glass substrate 9 with the PD 2 removed.

P arranged in a state of intersecting with the optical fiber 3
The PD anode terminal 15 and P
The D cathode terminal 16 and the fixing terminal 19 a are arranged along the optical fiber 3. A fixing terminal 19b is arranged on the other side of the lower surface of the PD2.
On one side of the optical fiber 3 in the glass substrate 9, a PD anode terminal 15 provided on the lower surface of the PD 2,
An anode terminal electrode 18, a cathode terminal electrode 17, and a fixing terminal 19c to which the PD cathode terminal 16 and the fixing terminal 19a are respectively connected are provided along the optical fiber 3.

The cathode terminal electrode 17 is connected to the second lead 7
2 is connected via a microstrip line 216 to a wire pad 44 arranged close to the second. Further, the anode terminal electrode 18 is connected to a wire pad 45 arranged close to the first lead terminal 71 via a microstrip line 215. Then, as shown in FIG. 5, the wire pad 44 and the wire pad 45 are connected to the second lead 72 and the first lead 7.
1 are wire-bonded to each other by a gold wire 64 and a gold wire 65.

On the upper surface of the glass substrate 9 on the other side of the optical fiber 3, a terminal connection portion 19d to which the fixing terminal 19b of the PD 2 is connected is provided.

5 and 6, the PD anode terminal 15 and the PD cathode terminal 16 provided on the lower surface of the PD 2 are located on the same side of the optical fiber 3. Because it is provided in
The gold wires 65 and 64 connected to the PD anode terminal 15 and the PD cathode terminal 16
Therefore, the wiring distance of the gold wire 65 in the air can be particularly reduced. As a result, it is possible to reduce electric interference caused by electric wiring of the semiconductor laser device 1 and the PD 2.

Further, since the gold wires 64 and 65 are connected to the microstrip lines 216 and 215, respectively, the transmission characteristics of the signal light can be improved, and the manufacture becomes easy. The electrode-divided PD used in the present embodiment can be effectively used as a light receiving device as well as the integrated light receiving and emitting device. For example, a light receiving device with a high degree of design freedom can be obtained by combining an electrode-divided PD with a glass substrate. Also, on a glass substrate that is an optical waveguide substrate,
In a light receiving device in which a silicon IC is provided, the wiring length of the PD with respect to the minute silicon IC can be shortened.

FIG. 7 is a schematic sectional view showing an example of a light receiving device using an electrode-divided type PD. The optical waveguide 14 provided on the glass substrate 9 is curved upward, and its end face is
It is located on the upper surface of the glass substrate 9. An electrode-divided PD 2 is arranged on the glass substrate 9 such that the light receiving region 12 faces the end face of the optical waveguide 14,
3 fixed.

FIG. 8 is a schematic sectional view showing another example of the light receiving device using the divided electrode type PD 2, wherein the end face of the optical waveguide 14 is formed in an inclined state inside the glass substrate 9. Light is reflected at the inclined end surface. On the upper surface of the glass substrate 9, an electrode-divided PD 2 is fixed by a current-carrying bump 13, and the light reflected on the end face of the optical waveguide 14 is received by the light receiving region 12 of the PD 2. Such a light receiving device has a high degree of freedom in the arrangement of the PD 2 and can be downsized.

<Fifth Embodiment> FIG. 9 is a schematic plan view showing still another example of an embodiment of a bidirectional light receiving / emitting integrated device of the present invention.

The cathode electrode of the semiconductor laser device 1 fixed on the upper surface of the silicon substrate 8 is connected to the wire pad 43 provided near the fifth lead 75 by the wiring pattern 5.
2, and the wire pad 43 is wire-bonded to the fifth lead terminal 75 by the gold wire 63. Further, the anode electrode of the semiconductor laser device 1 is connected to the wire pad 41 provided near the sixth lead 76 via the microstrip line 214 via the wire pad 42 to which the gold wire 61 is wire-bonded. . The gold wire 62 is wire-bonded to the sixth lead 76 via the wire pad 41.

The anode electrode of the PD 2 provided on the upper surface of the glass substrate 9 is connected to the wire pad 45, and the first lead 71 is connected via the wire pad 45.
A gold wire 65 is wire-bonded. The first lead 71 and the fifth lead 75 to which the above-described cathode electrode of the semiconductor laser device 1 is connected are arranged at the farthest positions on the same diagonal line of the package 10. The cathode electrode of the PD 2 is wire-bonded to the second lead 72 via the wire pad 44.

As described above, since the cathode electrode of the semiconductor laser device 1 is connected to the fifth lead 75 and the anode electrode of the PD 2 is connected to the first lead 71,
The cathode terminal of the semiconductor laser device 1 and the anode terminal of the PD 2 are arranged farthest from each other in the package 10, and electrical interference between the laser modulation signal and the output signal from the PD 2 is reliably reduced.

In this embodiment, the wiring for each electrode of the PD 2 is taken out to one side of the optical fiber 3. However, as in the first to third embodiments, the wiring for the anode electrode of the PD 2 is not connected. Also, the present invention can be applied to the case where the optical fiber 3 is crossed. In this case, the optical fiber 3
Since the length of the gold wire 65 that intersects with the laser beam becomes longer, electrical interference between the laser modulation signal and the output signal from the PD 2 is significantly reduced, and the effect is particularly enhanced.

<Sixth Embodiment> FIG. 10 is a schematic plan view showing still another example of the embodiment of the bidirectional integrated light receiving and emitting device of the present invention.

In this two-way integrated device for receiving and emitting light, the glass substrate 9 located between the semiconductor laser element 1 and the PD 2
On the side, a multilayered carbon sheet 24 is provided. The carbon sheet 24 is arranged so as to fill the gap between the glass substrate 9 and the lid of the package 10, and absorbs electromagnetic waves between the semiconductor laser element 1 and the PD2.

When the transmission frequency of the optical signal is several MHz to several GHz, as the thickness of the carbon sheet 24 increases, the effect of reducing the crosstalk can be obtained. By filling the entire space with the carbon sheet 24, the crosstalk is reliably reduced.

In this embodiment, a carbon sheet is used as an electromagnetic wave absorbing material for absorbing electromagnetic waves.
The invention is not limited to this, and any material may be used as long as it can absorb electromagnetic waves. For example, a resin material mixed with carbon powder may be provided. In this case, since the gap between the semiconductor laser element 1 and the PD 2 can be shielded without any gap, the electromagnetic wave can be more reliably absorbed.

In place of the electromagnetic wave absorbing material, a metal plate may be arranged between the semiconductor laser device 1 and the PD 2 so as to block electromagnetic waves between the semiconductor laser device 1 and the PD 2. In such a configuration in which the metal plate is provided, the handling of the metal plate is easy, so that the manufacture of the two-way integrated light receiving and emitting device is facilitated. Further, by providing the metal plate and the electromagnetic wave absorbing material in the package 10 in this manner, the effect of reducing the crosstalk between the semiconductor laser element 1 and the PD 2 due to the reflection of the electromagnetic wave on the wall surface can be obtained.

<Seventh Embodiment> FIG. 11 is a schematic plan view showing still another example of an embodiment of the bidirectional integrated light receiving and emitting device of the present invention. The anode electrode of the semiconductor laser device 1 fixed on the upper surface of the silicon substrate 8 is wire-bonded to the sixth lead 76 via the wire pad 41 provided near the sixth lead 76,
The wire pad 41 is wire-bonded to the bypass capacitor 25 by a gold wire 66.

The cathode electrode of the PD 2 fixed on the upper surface of the glass substrate 9 is wire-bonded to the second lead 72 via the wire pad 44, and the wire pad 44 is connected to the bypass capacitor 26 by the gold wire 6.
7 is wire-bonded.

As described above, the wiring of the anode electrode of the semiconductor laser device 1 and the wiring of the cathode electrode of the PD 2 are:
By connecting bypass capacitors 25 and 26, respectively, the ground lines of semiconductor laser device 1 and PD2 are strengthened, and the generation of electromagnetic waves that cause electrical interference is suppressed.

In each of the embodiments, the wiring for the semiconductor laser element 1 is formed by using the fifth lead 75 and the sixth lead 76 arranged on one side of the package 10 and connecting to the PD 2. And a first lead 71 and a second lead 72 disposed on the other side of the package 10.
However, the wiring for the semiconductor laser element 1 is made up of the fourth lead 74 and the third lead 73, and the wiring for the PD 2 is made up of the seventh lead.
The lead 77 and the eighth lead 78 may be used. In this case, the same effects as in the above embodiments can be obtained.

Further, although the respective leads, wires, and pads are wire-bonded using gold wires, wires made of other materials such as aluminum may be used. In this case, the same effects as those of the embodiments can be obtained. Furthermore, although the optical fiber supported in the groove of the glass substrate 9 is used as the optical waveguide, a similar effect can be obtained by using a PLC (Planer Lightwave Circuit), an organic waveguide, or the like. Although a silicon substrate is used as a substrate of a semiconductor laser element as a light emitting element, the same effect can be obtained when another material such as SiC is used.

Further, in each embodiment, the output wavelength of the semiconductor laser device 1 as the light emitting device is 1.3 μm and the light receiving wavelength of the PD 2 as the light receiving device is 1.55 μm. The light receiving wavelength of the PD 2 may be reversed, and the same effect can be obtained for suppressing the electric interference when the signal light is in another wavelength band. In addition, as a light emitting element, an LED (Light-Emitti
The same effect can be obtained by using a light source such as ng Diode.

[0079]

As described above, the integrated device for bidirectional light reception and emission according to the present invention can suppress the electric interference by the electric wiring of the light emitting element and the light receiving element.

[Brief description of the drawings]

FIG. 1 is a schematic plan view showing a first embodiment of a two-way integrated light receiving and emitting device of the present invention.

FIG. 2 is a graph showing the amount of electrical crosstalk of the integrated device for bidirectional light reception and emission.

FIG. 3 is a schematic plan view showing a second embodiment of the two-way integrated light receiving and emitting device of the present invention.

FIG. 4 is a schematic plan view showing a third embodiment of a two-way integrated light receiving / emitting device of the present invention.

FIG. 5 is a schematic plan view showing a fourth embodiment of a two-way integrated light receiving and emitting device of the present invention.

FIG. 6A is a diagram illustrating a P mode according to a fourth embodiment of the present invention.
D is a bottom view, and (b) is a plan view of a glass substrate 9 showing a fourth embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view illustrating an example of a light receiving device using a divided electrode type PD.

FIG. 8 is a schematic cross-sectional view showing another example of the light receiving device using the divided electrode type PD.

FIG. 9 is a schematic plan view showing a fifth embodiment of the two-way integrated light receiving and emitting device of the present invention.

FIG. 10 is a schematic plan view showing a sixth embodiment of the two-way integrated device for receiving and emitting light of the present invention.

FIG. 11 is a schematic plan view showing a seventh embodiment of a two-way integrated device for receiving and emitting light according to the present invention.

FIG. 12 is a schematic plan view showing an example of a conventional bidirectional light receiving and emitting integrated device.

FIG. 13 is a cross-sectional view showing details of an optical fiber embedded waveguide of the two-way integrated light receiving and emitting device.

FIG. 14 is a graph showing an electric crosstalk amount of the integrated light receiving and emitting device.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 semiconductor laser element 2 PD 3 optical fiber 7 lead 8 silicon substrate 9 glass substrate 10 package 11 filter 12 light receiving area 13 conducting bump 14 optical waveguide 15 PD anode terminal 16 PD cathode terminal 17 electrode for cathode terminal 18 electrode for anode terminal 19a fixing Terminal 19b Fixing terminal 19c Fixing terminal 19d Fixing terminal 21 Light emitting unit 22 Light receiving unit 24 Carbon sheet 25 Bypass capacitor 26 Bypass capacitor 41 Wire pad 42 Wire pad 43 Wire pad 44 Wire pad 45 Wire pad 51 Wiring pattern 52 Wiring pattern 53 Wiring pattern 54 Wiring pattern 61 Gold wire 62 Gold wire 63 Gold wire 64 Gold wire 65 Gold wire 66 Gold wire 67 Gold Wire 71 first lead 72 second lead 73 third lead 74 fourth lead 75 fifth lead 76 sixth lead 77 seventh lead 78 eighth lead 214 microstrip line 215 microstrip line 216 microstrip line

Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat II (reference) H01L 31/02 DF term (reference) 2H037 AA01 BA02 BA11 CA37 DA35 DA40 5F073 AB15 AB28 BA01 EA15 FA02 FA06 FA07 FA13 FA27 5F088 BA03 BA16 BB01 EA09 EA11 EA16 GA02 JA03 JA10 JA13 JA14 5F089 AA01 AC09 AC10 AC16 AC17 BC09 BC10 BC16 BC17 BC25 CA11 GA07

Claims (19)

[Claims] 1. A light-emitting element and a light-receiving element provided on a substrate in a package, and one optical waveguide arranged on each substrate so that the light-emitting element and the light-receiving element are optically coupled to each other. And a plurality of leads provided on a package so as to be electrically connected to the respective electrodes of the light emitting element and the light receiving element by respective wirings, and connected to one electrode of the light emitting element. And a wiring connected to one electrode of the light receiving element is connected to one of the leads so as to have an appropriate angle with each other. Integrated device. 2. The integrated device according to claim 1, wherein each electrode of the light receiving element is provided on each side of the optical waveguide. 3. Each of the electrodes of the light receiving element is connected to a pair of leads arranged on one side of the package, and each electrode of the light emitting element is arranged on the other side of the package. 2. The bidirectional integrated light receiving and emitting device according to claim 1, wherein the device is connected to a pair of leads. 4. The positive and negative electrode terminals of the light receiving element are located on one side of the optical waveguide, and are respectively connected to positive and negative terminal electrodes fixed on a substrate. The integrated device for bidirectional light reception and emission according to claim 1. 5. The integrated device for bidirectional light reception and emission according to claim 1, wherein a wire is used as the wiring. 6. The integrated device for bidirectional light reception and emission according to claim 5, wherein the wire is a gold wire. 7. The two-way integrated device for receiving and emitting light according to claim 1, wherein a wiring pattern provided on a substrate is used as said wiring. 8. The two-way integrated device for receiving and emitting light according to claim 1, wherein a wire and a wiring pattern are used as said wiring. 9. The integrated device for bidirectional light reception and emission according to claim 7, wherein a microstrip line is used as the wiring pattern. 10. The optical waveguide is provided with a reflection filter that reflects light of a predetermined wavelength to a light receiving element provided on a substrate and transmits light of a predetermined wavelength emitted from a light emitting element. The two-way integrated light receiving and emitting device according to claim 1. 11. A light-emitting element and a light-receiving element provided on a substrate in a package; and one optical waveguide provided on each substrate so that the light-emitting element and the light-receiving element are respectively optically coupled to each other. A plurality of leads provided on a package so as to be electrically connected to the respective electrodes of the light emitting element and the light receiving element by respective wirings; The two-way receiving device is characterized in that a wiring to be connected and a wiring to be connected to an electrode of the light receiving element having a polarity different from that of the electrode are respectively connected to leads which are arranged farthest apart in the package. Light emitting integrated device. 12. The two-way integrated light receiving and emitting device according to claim 11, wherein a wire is used as said wiring. 13. The two-way integrated light receiving and emitting device according to claim 12, wherein said wire is a gold wire. 14. The integrated device for bidirectional light reception and emission according to claim 11, wherein a wiring pattern provided on a substrate is used as said wiring. 15. The two-way integrated device for receiving and emitting light according to claim 11, wherein a wire and a wiring pattern are used as said wiring. 16. A light emitting element and a light receiving element provided on a substrate in a package, and one optical waveguide provided on each substrate such that the light emitting element and the light receiving element are optically coupled to each other. Wherein an electromagnetic wave shielding material is disposed between the light emitting element and the light receiving element. 17. The integrated device for two-way light reception and emission according to claim 16, wherein the electromagnetic wave shielding material is a conductive material. 18. The integrated two-way light receiving and emitting device according to claim 16, wherein the electromagnetic wave shielding material is a material containing carbon. 19. A light-emitting element and a light-receiving element provided on a substrate in a package; and one optical waveguide provided on each substrate so that the light-emitting element and the light-receiving element are optically coupled to each other. A plurality of leads provided on a package so as to be electrically connected to each other by the wiring and the respective electrodes of the light emitting element and the light receiving element; A two-way integrated light receiving and emitting device, wherein a wiring to be connected and a wiring to be connected to an electrode of the light receiving element having a polarity different from that of the electrode are grounded via a capacitor.