JP2001345413A - Lead frame and semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a semiconductor chip from coming into contact with the tip of a lead that is arranged below the semiconductor chip, and the non-filling of sealing resin to the gap between the semiconductor chip and tip of the lead when the semiconductor chip having larger external dimensions than a die pad is mounted onto the die pad. SOLUTION: This lead frame is equipped with a die pad 402 that mounts the semiconductor chip, a plurality of projections 408 that are arranged so that an equilateral triangle is formed on the upper surface of a die pad 401, and a plurality of leads whose tips are arranged adjacent to the die pad 402, whose other ends are extended outward, and whose planes are the same as the upper surface of the die pad 402.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame and a semiconductor device using the same, and more particularly, to a lead pad for mounting a semiconductor chip and a tip of a lead arranged adjacent to the die pad. The present invention relates to a lead frame in which a rectangular semiconductor chip having an outer dimension larger than the outer dimension of the die pad is arranged and can be fixed to the upper surface of the die pad, and a semiconductor device using the same.

[0002]

2. Description of the Related Art Recently, products having the same number of pins and different chip dimensions, for example, ASIC (Application Sp
ecific Integrated Circuit) products, without making a lead frame corresponding to the chip dimensions, if the external dimensions of the semiconductor chip are larger than the external dimensions of the die pad,
The semiconductor chip is arranged so as to straddle the die pad and the tip of a lead arranged adjacent to the die pad and not to contact the tip of the lead.

Further, in a BGA (Ball Grid Array) type semiconductor device, in order to arrange a plurality of ball electrodes, a plurality of ball electrodes are arranged in a staggered manner adjacent to a die pad, and a semiconductor chip is connected to the die pad and the die pad. Are arranged so as not to come into contact with the leading end of the lead and to be in contact with the leading end of the lead.

Next, a typical example of the BGA type semiconductor device will be described with reference to FIGS.

FIG. 10A is a plan view showing a lead frame used in a general BGA type semiconductor device.
FIG. 11B is a cross-sectional view of the lead frame of FIG. 10A cut along the line AA ′ and viewed from the direction of the arrow.
11A is a plan view schematically showing a general BGA type semiconductor device, and FIG. 11B is a cross-sectional view of the BGA type semiconductor device shown in FIG. It is sectional drawing seen from the direction.

That is, in the BGA type semiconductor device, as shown in FIG. 10, a lead frame 100 is formed by punching or etching a rectangular thin metal plate, for example. , A rectangular die pad 102 is formed, and the die pad 102 is formed.
Are supported by four suspension leads 103 connected to the frame 101. Further, each side of the die pad 102 has a different length and the die pad 1
02, a plurality of leads 104a, 104 coplanar with the upper surface.
b are alternately arranged, the tips of the leads 104a and 104b are arranged adjacent to the die pad 102 in a staggered manner, and the ends of the leads 104a and 104b are connected to a dam bar 105 connected to the frame 101. The leads 104a and 104b are supported by the dam bar 105.

Then, as shown in FIG. 11, a semiconductor chip 110 is disposed over the die pad 102 and the tip of the long lead 104a in the lead frame 100, and is coated on the die pad by about 5 to 25 μm.
It is fixed to the upper surface of the die pad 102 via a thick adhesive 120. Each electrode (bonding pad) 111 on the upper surface of the semiconductor chip 110 and the leads 104a,
4b are connected to each other via a connection member 130 such as an Au wire, and the semiconductor chip 110, the leads 104a, 104b, and the connection member 120 are removed except for the lower surfaces of the leads 104a, 104b. And the die pad 102 is formed of a sealing resin 140 such as an epoxy resin.
Each of the leads 10 exposed from the lower surface of the sealing resin 140 after the dam bar 105, the frame 101, and the like exposed from the outer portion of the sealing resin 140 are cut and removed.
The BGA type semiconductor device is completed by forming the ball electrodes 150 on the lower surfaces of the tip portions of 4a and 104b, respectively.

However, the gap between the lower surface of the semiconductor chip 110 and the upper surface of the tip of the long lead 104a disposed under the semiconductor chip 110 is only the thickness of the adhesive 120, and is generally about 5 to 10 μm. If the tip of the lead 104a is extremely small and slightly bent upward, or if the semiconductor chip 110 is slightly inclined when mounting the semiconductor chip 110 on the die pad 102, the lower surface of the semiconductor chip 110 and The tip of the lead 104a disposed below the semiconductor chip 110 comes into contact with the tip.

Conventionally, the following technique has been known to prevent such contact between the semiconductor chip and the tip of the lead. First, about the first improvement technology,
This will be described with reference to FIG.

FIG. 12 is a cross-sectional view of a BGA type semiconductor device according to the first related art.

That is, in this BGA type semiconductor device, about 3
Spacer 201 such as glass beads having a particle size of 0 μm
This is the one using the adhesive material 200 mixed with. this is,
Normally, the size of the filler mixed in the sealing resin 140 is about 30 μm, and the sealing resin 140 is formed between the lower surface of the semiconductor chip 110 and the upper surface of the tip of the lead 104 a disposed below the semiconductor chip 110. And the gap between the lower surface of the semiconductor chip 110 and the upper surface of the tip of the lead 104a is increased as compared with the case where a normal adhesive 120 is used, so as to prevent contact between the two. It was made.

However, since the spacer 201 moves freely in the adhesive material 200, when the adhesive material 200 is applied to the upper surface of the die pad 102, the distribution of the spacer 201 tends to be uneven, and the adhesive material 200
It is difficult to form the semiconductor chip 110 into a uniform thickness, and the semiconductor chip 110 may be inclined, and the lower surface of the semiconductor chip 110 may contact the upper surface of the tip of the lead 104a below the semiconductor chip 110.

The adhesive 200 is a spacer 201
When mixed, the apparent properties such as viscosity change, so that it is necessary to wipe off the liquid dripping of the adhesive 200 at the discharge port of the dispenser at the time of application, and the efficiency of application operation is reduced.

Next, a second improved technique will be described with reference to FIG.

FIG. 13 is a cross-sectional view of a BGA type semiconductor device according to the second related art.

That is, in this BGA type semiconductor device, the leads 10 arranged below the semiconductor chip 110
4a, an insulating layer 3 of polyimide, resist, etc.
00 is formed to a thickness of about 6 to 16 μm, and the lower surface of the semiconductor chip 110 and the upper surface of the tip of the lead 104 a are electrically insulated by the insulating layer 300.

In this structure, an ordinary adhesive having a thickness of about 5 to 10 μm can be used, but the gap between the lower surface of the semiconductor chip 110 and the upper surface of the insulating layer 300 is as small as about 0 to 19 μm. The gap between the two is not filled with the sealing resin 140 mixed with a filler having a size of about 30 μm. In addition, when polyimide is used for the insulating layer 300, adhesion to the sealing resin (epoxy resin) is poor, and peeling of the sealing resin is caused. Become.

[0018]

As described above, in the conventional semiconductor device according to the first improved technique, since the spacers in the adhesive material move freely in the adhesive material, the distribution of the spacers is biased. This is likely to occur, and the lower surface of the semiconductor chip may come into contact with the tip of the lead disposed below the semiconductor chip. In addition, the mixing of the spacers apparently changes the physical properties such as the viscosity of the adhesive, so that it is necessary to wipe the liquid of the adhesive at the discharge port of the dispenser at the time of coating, which lowers the efficiency of the coating operation. I do.

On the other hand, in the conventional semiconductor device according to the second improved technique, the lower surface of the semiconductor chip and the upper surface of the tip of the lead are electrically insulated by an insulating layer. Since the gap with the upper surface is reduced by the thickness of the insulating layer, the gap is not filled with the sealing resin. Further, when polyimide is used for the insulating layer, adhesion to a sealing resin (epoxy resin) is poor, and peeling of the sealing resin is caused, which causes a reduction in reliability of the semiconductor device.

The present invention has been made in view of the above problems, and
When a rectangular semiconductor chip having an outer dimension larger than the outer dimension of the die pad is fixed on the die pad via an adhesive, contact between the lower surface of the semiconductor chip and the upper surface of the leading end of the lead portion arranged on the lower surface of the semiconductor chip is made. It is an object of the present invention to provide a lead frame which can prevent the gap and fill a gap between them with a sealing resin, and a semiconductor device using the same.

[0021]

According to a first aspect of the present invention, there is provided a lead frame for mounting a semiconductor chip on a die pad, wherein a polygon is formed on an upper surface of the die pad. A plurality of projections arranged, the tip end portion is arranged adjacent to the die pad,
It is characterized in that it has a plurality of leads extending at the other end outward and coplanar with the upper surface of the die pad.

In the lead frame according to the second aspect of the present invention, the length (W) of one side of the polygon of the projection is provided.
However, assuming that the outer dimensions of the die pad are L, L / 2 ≦ W
<L.

Further, in the lead frame according to the present invention, there is provided a die pad for mounting a semiconductor chip, a projection arranged on the upper surface of the die pad so as to form one or more annular structures, The die pad is provided with a plurality of leads having a tip portion adjacent to the die pad, the other end portion extending outward, and being flush with the upper surface of the die pad.

Further, in the invention corresponding to claim 4,
When the inner diameter (R) of the annular structure of the projection is defined as the outer dimension L of the die pad, a relationship of L / 2 ≦ R <L is satisfied.

Further, in the lead frame according to the present invention, the plurality of leads have different lengths, and the leads having different lengths have a staggered tip around the die pad. Are arranged alternately so as to be arranged adjacent to each other.

Still further, in the lead frame according to the present invention, the plurality of leads are connected to an inner lead portion whose tip is disposed adjacent to the die pad and the inner lead portion. And an outer lead portion extending outward from the lead portion.

Further, in the lead frame according to the present invention, the height of the projection is set to be equal to or larger than the size of the filler contained in the used sealing resin.

Still further, in the semiconductor device according to the present invention, a die pad for mounting a semiconductor chip, a plurality of protrusions arranged so as to form a polygon on the upper surface of the die pad; A plurality of leads are disposed adjacent to each other, the other end extends outward, and a plurality of leads are formed flush with the upper surface of the die pad, and a plurality of electrodes are formed on the upper surface. A square semiconductor chip having a large external dimension, being arranged over the die pad and the tip of the lead, and being fixed to the upper surface of the die pad via an adhesive, and the plurality of electrodes of the semiconductor chip A connection member for electrically connecting the semiconductor chip, the connection member, and the die pad, except for a part of each of the leads. It is characterized by comprising a sealing resin for sealing the.

Further, in the semiconductor device according to the present invention, a die pad for mounting a semiconductor chip, and a projection arranged on the upper surface of the die pad so as to form one or more annular structures. A plurality of leads formed on the top surface of the die pad, a plurality of leads formed on the top surface of the die pad, and a plurality of electrodes formed on the top surface of the die pad; A rectangular semiconductor chip having an outer dimension larger than the outer dimension, disposed over the die pad and the tip of the lead, and fixed to the upper surface of the die pad via an adhesive; A connection member for electrically connecting the plurality of electrodes and the plurality of leads,
The semiconductor device is characterized by including a sealing resin for sealing the semiconductor chip, the connection member, and the die pad, except for a part of each of the leads.

Further, in the semiconductor device according to the present invention, the plurality of leads have different lengths, and the leads having different lengths are staggered around the die pad. The tips of the long leads are arranged below the semiconductor chip, and the lower surfaces of the tips of the leads are exposed from the sealing resin, and are exposed. A ball electrode is formed on the lower surface of each end of the lead.

Further, in the semiconductor device according to the present invention, the plurality of leads are connected to an inner lead portion having a tip portion adjacent to the die pad and the inner lead portion. An outer lead portion extending outward from the lead portion, a tip of the inner lead portion is disposed below the semiconductor chip, and the outer lead portion of each lead is exposed from the sealing resin. It is characterized by becoming.

In the present invention described above, it is preferable to provide the following configuration.

(1) In the lead frame according to the first aspect of the present invention and the semiconductor device according to the eighth aspect of the present invention, the polygon formed by the protrusions may be a triangle, a quadrilateral,
It must be a pentagon, hexagon, or trapezoid.

(2) In the lead frame according to the third aspect of the invention and the semiconductor device according to the ninth aspect, the annular structure of the protrusion is any one of a circle, a non-circle, and a polygon. .

(3) In the lead frame according to the third aspect of the present invention, the protrusion has an annular structure in which a part is omitted.

(6) In the semiconductor device according to the eighth aspect of the present invention, the length (W) of one side of the polygon of the projection is provided.
However, assuming that the outer dimensions of the die pad are L, L / 2 ≦
W <L.

(7) In the semiconductor device according to the ninth aspect of the present invention, the inner diameter (R) of the annular structure of the projection is L / 2 ≦ R <L, where L is the outer dimension of the die pad.
Have a relationship.

(8) In the semiconductor device according to the eighth, ninth, tenth, and eleventh aspects of the present invention, the height of the protrusion is set to be equal to or larger than the size of the filler contained in the sealing resin used. And

(9) In the lead frame and the semiconductor device of the invention according to the above claims, the protrusion is formed of resin or metal.

(10) In the lead frame and the semiconductor device of the invention according to the above claims, the height of the protrusion is
Usually, it should be 30 μm or more in consideration of the size of the filler contained in the sealing resin used.

[0041]

Embodiments of the present invention will be described below in detail with reference to the drawings.

(First Embodiment) First, a lead frame according to a first embodiment of the present invention and a BG using the same are described.
The A-type semiconductor device will be described.

FIG. 1A is a plan view of a lead frame according to the first embodiment of the present invention, and FIG.
(A) cutting the lead frame along the line AA ';
It is sectional drawing seen from the arrow direction.

The lead frame 400 is formed by punching or etching a single thin metal plate, for example, a copper plate, and has a square frame 401 for mounting a semiconductor chip in the center of a square frame 401. A die pad 402 is formed. This die pad 402
Are four suspension leads 403 connected to the frame 401
Supported by Also, the die pad 402
On the upper surface, that is, the semiconductor chip mounting surface, a plurality of protrusions 40
8 are arranged and formed so as to form a polygon.

In this embodiment, for example, three projections 4
08a, 408b, and 408c are set so as to form a virtual equilateral triangle as indicated by broken lines, and the center of gravity of the equilateral triangle is located at the center position of the die pad 402. The distance between the centers of the projections 408a, 408b, and 408c, that is, the length of one side of the equilateral triangle, is set so that a square semiconductor chip mounted on the die pad 402 is stably supported on the die pad 402. Part 4
If the length of one side of 08a, 408b, 408c (distance between centers of adjacent protrusions) is W, and the outer dimension of the die pad 402 is L, the relationship is L / 2 ≦ W <L. As an example, the outer dimensions of the die pad 402 are set to 3
mm x 3 mm, external dimensions of the semiconductor chip are 5 mm x 5 m
m, the protrusions 408a, 408b, 408
c has a side length of 1.5 mm, and its center of gravity is arranged in an equilateral triangle located at the center of the die pad.

The projections 408a, 408b, 4
The height of 08c is formed to be equal to or larger than the size of the filler contained in the sealing resin to be used. Here, as an example, the height is about 30 μm in consideration of the size of a filler contained in a generally used sealing resin, for example, an epoxy resin, about 30 μm.

Further, the protrusions 408a, 408
b, 408c are resins such as polyimide resin, or silver,
It is formed of a metal such as nickel. First, in the case of a protrusion of polyimide resin, as an example, as shown in FIG. 3A, a resist 501 is formed on the upper surface of the die pad 402 to a predetermined thickness, for example, about 30 μm. As shown in FIG. 5, the length of one side is L / 2 of the outer dimension L of the die pad 402 using a well-known light exposure and development technique.
For example, at each vertex position of a virtual equilateral triangle having a size of 1.5 mm, for example, openings 502a and 502 having a diameter of about 50 μm are provided.
b, forming a resist mask 502 having 502c;
Next, as shown in FIG.
2 is used as a mask to form a polyimide resin 408 'by a well-known printing technique, and after the polyimide resin 408' is cured by heating, the resist mask 502 is removed, so that the height as shown in FIG. Are about 30 μm, the diameter is about 50 μm, and the length of each side is 1.5 mm. The three protrusions 408 a, 408 b, and 408 are arranged in a regular triangular structure.
c is obtained.

On the other hand, in the case of a metal projection, for example, as shown in FIG.
At each vertex position of a virtual equilateral triangle having L / 2, for example, 1.5 mm, for example, a circular opening 602 having a diameter of about 50 μm.
After the silicon rubber mask 602 having a, 602b and 602c is brought into close contact with each other, as shown in FIG. 4B, the silicon rubber mask 602 is used as a mask and the die pad 402 is negatively charged. A plating material, for example, an electrolytic solution containing silver is positively charged and sprayed, or immersed in a positively charged electrolytic solution to grow the plating. Next, the silicon rubber mask 602 is removed to form a regular triangular structure having a height of about 30 μm, a diameter of about 50 μm, and a side of 1.5 mm as shown in FIG. Three projections 408a, 408b, 408c in the arrangement are obtained.

In the frame 401, a plurality of leads 404 are provided.
Are arranged on each side of the rectangular die pad 402. Each of the plurality of leads 404 arranged on each side has a different lead length, and leads 404a and 402b having different lengths are alternately arranged. The tips of the leads 404a and 404b are arranged adjacent to the periphery of the die pad 402, and the ends opposite to the tips are the dam bars 4 connected to the frame 401.
05. Each of the leads 404 is mechanically supported by the dam bar 405, and leakage of the sealing resin is prevented.

Next, using the above lead frame, a BGA
A case of manufacturing a die semiconductor device will be described with reference to FIG. FIG. 2 shows B according to the first embodiment of the present invention.
FIG. 2A shows a GA type semiconductor device, and FIG.
FIG. 2B is a plan view of the GA semiconductor device, and FIG.
1 is a cross-sectional view of the BGA type semiconductor device of FIG. 1 taken along line AA ′ and viewed in the direction of the arrow.

First, an adhesive 420 for bonding a semiconductor chip is formed on the upper surface of the die pad 402 of the lead frame 400. In addition, the adhesive 420 is at least connected to the three protrusions 4 on the upper surface of the die pad 402.
It is formed to a height of 08a, 408b, 408c, for example, a thickness of 30 μm.

Next, a rectangular semiconductor chip 410 having an outer dimension larger than the outer dimension of the die pad 402
Is disposed over the die pad 402 and the tip of the long lead 404 a, and is bonded and fixed to the upper surface of the die pad 402 via the adhesive 420.

After the semiconductor chip 410 is bonded and fixed to the die pad 402, the electrodes (bonding pads) 411 on the upper surface of the semiconductor chip 410, the tips of the short leads 404b, and the long leads 404a
Are electrically connected to each other via a connection member 430 such as an Au wire.

Next, the die pad 402, the leads 404, the connection members 430, and the semiconductor chip 410 are vacuum-sealed with a sealing resin 440 such as an epoxy resin, except for the lower surfaces of the tips of the leads 404a and 404b. After tightly sealing, the dam bar, frame, and the like exposed on the outer portion of the sealing resin are cut and removed with a press.
Metal balls 450a and 450b are fixed to the lower surfaces of the tips of the leads 404 exposed on the lower surfaces, respectively.
The semiconductor device is completed.

In the lead frame and the semiconductor device using the same according to this embodiment, a plurality of the lead frames are arranged on the upper surface of the die pad 402 in a regular triangular structure and formed at a height equal to or larger than the size of the filler in the sealing resin 440. Projection 408
a, 408b, 408c, the semiconductor chip 41
0 is stably supported on the upper surface of the die pad 402, so that the lower surface of the semiconductor chip 410 and the long lead 40
There is no contact with the upper surface of the tip of 4a. Further, the gap between the lower surface of the semiconductor chip 410 and the upper surface of the tip of the long lead 404a disposed adjacent to the lower side of the semiconductor chip 410 is formed at a distance equal to or larger than the size of the filler in the sealing resin 440. The gap between the two is completely filled with the sealing resin 440. Further, even when the protrusion is formed of a polyimide resin, the periphery of the protrusion is protected by the adhesive, does not come into contact with the sealing resin, and there is no fear of peeling. Therefore, the reliability of the semiconductor device is improved.

(Second Embodiment) Next, a lead frame and a general-type semiconductor device according to a second embodiment of the present invention will be described.

FIG. 5A is a plan view showing a plane of a lead frame according to a second embodiment of the present invention, and FIG.
FIG. 6 is a cross-sectional view showing a state where the lead frame of FIG. 5A is cut along the line AA ′ and viewed from the direction of the arrow.

This lead frame 800 is formed by punching or etching one thin copper plate.
A square die pad 802 for mounting a semiconductor chip is formed at the center of the rectangular frame 801. The die pad 802 is supported by the frame by four suspension leads 803 connected to the frame 801. A plurality of projections 808 are arranged on the upper surface of the die pad 802, that is, on the semiconductor chip mounting surface so as to form a polygon.

Also in this embodiment, the plurality of projections 80
8 is formed in the same manner as in the first embodiment. That is, 3
The projections 808 a, 808 b, and 808 c are set so as to form a virtual equilateral triangle as shown by a broken line, and the center of gravity of the equilateral triangle is located at the center position of the die pad 802. Also, the protrusions 808a, 808
8b, 808c is equal to the length of the die pad 802.
The square semiconductor chip mounted on the die pad 8
02 for stable support on the projections 808a,
Assuming that the length of one side of 808b and 808c is W and the outer dimension of the die pad 802 is L, the relationship is L / 2 ≦ W <L. As an example, the outer dimensions of the die pad 802 are 3 mm × 3 mm, and the outer dimensions of the semiconductor chip are 5 mm.
mm × 5 mm, the protrusions 808a, 808
b and 808c are arranged in a regular triangular shape having a side of 1.5 mm in length and a center of gravity located at the center of the die pad.

The projections 808a, 808b, 8
The height of 08c is formed to be equal to or larger than the size of the filler contained in the sealing resin to be used. It is formed at a height of 30 μm.

Further, the projections 808a, 808
b, 808c is a resin such as a polyimide resin, or silver,
It is formed of a metal such as nickel. As in the case of the first embodiment, in the case of a polyimide protrusion, the protrusion is formed by well-known light exposure, development technology, and printing technology. On the other hand, in the case of a metal protrusion, it is formed by well-known light exposure, development technology, and plating technology.

In the frame 801, a plurality of leads 804 are provided.
Are arranged on each side of the rectangular die pad 802. Each of the leads 804 is connected to the inner lead portion 8.
04a and an outer lead portion 804b extending from the inner lead portion 804a, the tip of the inner lead portion 804a is disposed adjacent to the periphery of the die pad 802, and the end of the outer lead portion 804b is It is connected to the frame 801.

The suspension lead 803 and the lead 80
4 has a dam bar 8 connected to the frame 801.
The suspension lead 803 and the lead 804 are connected to the dam bar 805, and the dam bar 805 mechanically supports the leads 804 and prevents leakage of the sealing resin.

Next, a case of manufacturing a general-type semiconductor device using the above-described lead frame will be described with reference to FIG. 6A and 6B show a general type semiconductor device according to the first embodiment of the present invention. FIG. 6A is a plan view of the general type semiconductor device, and FIG.
FIG. 3A is a cross-sectional view of the semiconductor device taken along line AA ′ and viewed in the direction of the arrow.

First, an adhesive 820 for bonding a semiconductor chip is formed on the upper surface of the die pad 802 of the lead frame 800. The adhesive 820 is at least as high as the height of the three protrusions 808a, 808b, 808c on the upper surface of the die pad 802, for example, 30 μm.
m.

Next, a rectangular semiconductor chip 810 having an outer dimension larger than the outer dimension of the die pad 802 is formed.
Is disposed over the die pad 802 and the tip of the inner lead portion 804a of the lead 804, and is adhered and fixed to the upper surface of the die pad 802 via the adhesive 820.

After the semiconductor chip 801 is bonded and fixed to the die pad 802, each electrode (bonding pad) 811 on the upper surface of the semiconductor chip 810 and the lead 8
04 is electrically connected to the inner lead portion 804a via a connection member 830 such as an Au wire.

Next, except for the outer lead portion 804b of the lead 804, the die pad 802, the inner lead portion 804a, the semiconductor chip 810, and the connection member 830 are sealed with a sealing resin 840 such as epoxy resin. After tightly sealing, the frame 801 and the dam bar 805 and the like exposed to the outside of the sealing resin 840 are cut and removed by a press. Finally, the outer lead portion 804b exposed from the side surface of the sealing resin 840 is removed. By molding, a general type semiconductor device is completed.

The same effects as those of the first embodiment can be obtained in the lead frame of the second embodiment and the general type semiconductor device using the same.

(Third Embodiment) Next, a third embodiment of the present invention will be described.
The lead frame according to the embodiment and the semiconductor device using the same will be described. The lead frame and the semiconductor device according to the first and second embodiments are different from the lead frame and the semiconductor device in the arrangement of the protrusions formed on the upper surface of the die pad in the lead frame. Only the structure is different, and the rest is the same as the first and second embodiments. The description of the same parts as the first and second embodiments is omitted, and only the different parts will be described in detail with reference to FIG. Will be described.

FIG. 7 is a plan view schematically showing only a die pad portion of a lead frame according to the third embodiment of the present invention.

That is, in the lead frame 700 of the third embodiment, as shown in FIG. 7, four protrusions 708a, 708b, 708c, 70c are formed on the upper surface of the die pad 702.
8d are arranged so as to form a regular square (square). In the case of this square configuration, the first
Similarly to the second embodiment, the length (W) of each side is formed so as to satisfy the relationship of L / 2 ≦ W <L, where L is the outer dimension of the die pad. In the case of a square structure, at least the length of the short side is L / 2 ≦
What is necessary is just to form so as to satisfy the relationship of W <L. Further, the height of the protrusion is also formed to be 30 μm or more, similarly to the first (and second) embodiment. The arrangement structure of the protrusion is not limited to a square, but is shown in FIG. And a hexagonal structure shown in FIG. 7C.

In the lead frame of the third embodiment and the semiconductor device using the same, the first and second
The same effect as that of the embodiment can be obtained.

(Fourth Embodiment) Next, a fourth embodiment of the present invention will be described.
The lead frame according to the embodiment and the semiconductor device using the same will be described. The lead frame and the semiconductor device according to the first and second embodiments are different from the lead frame and the semiconductor device in the arrangement of the protrusions formed on the upper surface of the die pad in the lead frame. Only the structure is different, and the rest is the same as the first and second embodiments. The description of the same parts as the first and second embodiments will be omitted, and only the different parts will be described in detail with reference to FIG. Will be described.

FIG. 8 is a plan view schematically showing only a die pad portion of a lead frame according to a fourth embodiment of the present invention.

That is, in the lead frame 900 of the fourth embodiment, as shown in FIG.
02, a projection 908 is formed in one or more annular structures. Here, the protrusion 908 is formed, for example, in a circular structure, but may be non-circular.
As shown in (b) to FIG. 8 (e), a triangle, a square,
It may be formed in a polygonal shape such as a pentagon or a hexagon. Further, as shown in FIGS. 9A to 9E, the protrusion 908
May have an annular structure in which a part is omitted. In this case, at the time of application of the adhesive, the adhesive inside and outside the ring moves with each other, and it is easy to form a uniform film thickness.

As in the case of the lead frames of the first and second embodiments, the inner diameter (R) of the annular structure of the protrusion is L / 2 ≦ R, where L is the outer dimension of the die pad. <Formed to satisfy the relationship of L,
The height of the protrusion is formed to be 30 μm or more. Furthermore, the protrusion is formed of resin, metal, or the like.

In the lead frame of the fourth embodiment and the semiconductor device using the same, the first and the second
The same effect as that of the embodiment can be obtained.

The present invention is not limited to the lead frame having a dam bar and the semiconductor device using the same according to the above-described embodiment, but can be applied to a lead frame having no dam bar and a semiconductor device using the same. .

[0080]

According to the lead frame of the present invention and the semiconductor device using the same, when a rectangular semiconductor chip having an outer dimension larger than the outer dimension of the die pad is fixed onto the die pad via an adhesive, the semiconductor chip is fixed. The contact between the lower surface of the chip and the upper surface of the tip of the inner lead portion disposed on the lower surface of the semiconductor chip can be prevented, and the gap between the two can be filled with a sealing resin, thereby improving the reliability of the semiconductor device.

[Brief description of the drawings]

FIGS. 1A and 1B are views showing a lead frame according to a first embodiment of the present invention. FIG. 1A is a plan view of the lead frame, and FIG. −
Sectional drawing cut | disconnected along the A 'line and seen from the arrow direction.

FIGS. 2A and 2B are views showing a BGA type semiconductor device according to a first embodiment of the present invention, FIG. 2A is a plan view of the BGA type semiconductor device, and FIG. FIG. 4 is a cross-sectional view of the BGA type semiconductor device cut along the line AA ′ and viewed from the direction of the arrow.

FIG. 3 is a process sectional view schematically showing an example of a method for forming a lead frame according to the first embodiment of the present invention.

FIG. 4 is a process sectional view schematically showing another example of the method for forming a lead frame according to the first embodiment of the present invention.

5A and 5B are views showing a lead frame according to a second embodiment of the present invention. FIG. 5A is a plan view of the lead frame, and FIG. 5B is a view showing the lead frame of FIG. −
Sectional drawing cut | disconnected along the A 'line and seen from the arrow direction.

6A and 6B are views showing a general-type semiconductor device according to a second embodiment of the present invention. FIG. 6A is a plan view of the general-type semiconductor device, and FIG. FIG. 2 is a cross-sectional view of the semiconductor device taken along line AA ′ and viewed from the direction of the arrow.

FIG. 7 is a plan view showing one mode of an arrangement structure of protrusions in a die pad portion of a lead frame according to a third embodiment of the present invention.

FIG. 8 is a plan view showing another embodiment of the arrangement structure of the protrusions in the die pad portion of the lead frame according to the fourth embodiment of the present invention.

FIG. 9 is a plan view showing still another embodiment of the arrangement structure of the protrusions in the die pad portion of the lead frame according to the fourth embodiment of the present invention.

10A and 10B are views showing a lead frame used for a general BGA type semiconductor device, FIG. 10A is a plan view of the lead frame, and FIG. 10B is a view showing the BGA type semiconductor device shown in FIG. Sectional drawing cut | disconnected along the AA 'line of FIG.

11A and 11B are views showing a general BGA type semiconductor device, FIG. 11A is a plan view of the general BGA type semiconductor device, and FIG. 11B is a general view of the general BGA type semiconductor device in FIG. BGA
FIG. 2 is a cross-sectional view of the semiconductor device taken along the line AA ′ and viewed from the direction of the arrow.

FIG. 12 is a cross-sectional view schematically showing a BGA type semiconductor device according to a first related art.

FIG. 13 is a cross-sectional view schematically showing a BGA type semiconductor device according to a second conventional improvement technique.

[Explanation of symbols]

100, 400, 700, 800, 900: Lead frame 101, 401, 801: Frame 102, 402, 702, 802, 902: Die pad 103, 403, 803: Suspended lead 104, 404, 804: Lead 104a, 404a: Long Leads 104b, 404b Short leads 105, 405, 805 Dam bars 110, 410, 810 Semiconductor chips 111, 411, 811 Electrodes (bonding pads) 120, 200, 420, 820 Adhesives 130, 430, 830 Au Wire (connecting member) 140, 440, 840 sealing resin 201 spacer 300 insulating layer 408, 708, 808, 908 projecting part 501 resist 502 resist mask 602 silicon rubber mask 502, 602 opening 804a The inner lead portion 804b ... the outer lead portions

Claims (11)

[Claims] A die pad for mounting a semiconductor chip; a plurality of protrusions arranged to form a polygon on an upper surface of the die pad; a tip end portion adjacent to the die pad; A lead frame, comprising a plurality of leads extending outward and coplanar with the upper surface of the die pad. 2. The length (W) of one side of the polygon of the projection.
However, assuming that the outer dimensions of the die pad are L, L / 2 ≦ W
2. The lead frame according to claim 1, wherein the lead frame has a relationship of <L. 3. A die pad for mounting a semiconductor chip, a projection arranged on the upper surface of the die pad so as to form one or more annular structures, and a tip end thereof is arranged adjacent to the die pad. A lead frame having an end extending outward and a plurality of leads flush with an upper surface of the die pad. 4. The method according to claim 3, wherein the inner diameter (R) of the annular structure of the protrusion has a relationship of L / 2 ≦ R <L, where L is an outer dimension of the die pad. -Do frame. 5. A plurality of leads having different lengths, and the leads having different lengths are alternately arranged around the die pad such that tips thereof are arranged adjacently in a staggered manner. The lead frame according to claim 1 or 3, wherein: 6. The plurality of leads are connected to the inner lead portion and the inner lead portion, and the outer leads extend outward from the inner lead portion. The lead frame according to claim 1, wherein the lead frame comprises a part. 7. The lead frame according to claim 1, wherein the height of the protrusion is equal to or larger than the size of the filler contained in the sealing resin used. . 8. A die pad for mounting a semiconductor chip, a plurality of protrusions arranged so as to form a polygon on the upper surface of the die pad; A plurality of leads extending outward and coplanar with the upper surface of the die pad; a plurality of electrodes formed on the upper surface; having outer dimensions larger than the outer dimensions of the die pad; A square semiconductor chip disposed over the tip and fixed to the upper surface of the die pad via an adhesive; and electrically connecting the plurality of electrodes and the plurality of leads of the semiconductor chip, respectively. A connection member, and a sealing resin for sealing the semiconductor chip, the connection member, and the die pad except for a part of each of the leads. Semiconductor device. 9. A die pad for mounting a semiconductor chip, a projection arranged on the upper surface of the die pad so as to form one or more annular structures, a tip end of the projection being arranged adjacent to the die pad, A plurality of leads having ends extending outward and coplanar with the upper surface of the die pad; a plurality of electrodes formed on the upper surface; having outer dimensions larger than outer dimensions of the die pad; Electrically connecting the plurality of electrodes and the plurality of leads of the semiconductor chip in a square shape, which are disposed over the tip of the lead, and which are fixed to the upper surface of the die pad via an adhesive; And a sealing resin that seals the semiconductor chip, the connection member, and the die pad except for a part of each of the leads. The semiconductor device according to symptoms. 10. A plurality of leads having different lengths, and the leads having different lengths are alternately arranged around the die pad such that tips thereof are arranged in a staggered manner. The distal end of the long lead is disposed below the semiconductor chip, the lower surface of each distal end of the lead is exposed from the sealing resin, and a ball electrode is formed on the exposed lower surface of each distal end of the lead. The semiconductor device according to claim 8, wherein: 11. The plurality of leads are connected to the inner lead and the inner lead, the leading ends of which are arranged adjacent to the die pad, and the outer leads extend outward from the inner lead. And a tip portion of the inner lead portion is disposed below the semiconductor chip, and the outer lead portion of each of the leads is exposed from the sealing resin. 13. The semiconductor device according to claim 1.