JP2001345274A - Semiconductor-manufacturing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor-manufacturing device that prevents an electromagnetic wave permeation window from being heated. SOLUTION: The force feeding of air is carried out from an air pipe 33 to a coolant tank 31 by actuating a blower 34, the air is jetted from a nozzle 32 toward a high-frequency antenna 13 (a ceiling board 4), the ceiling board 4 is cooled by the air with a site that is opposite to the high-frequency antenna 13 and is easily heated as a center, and cooled so that temperature distribution in a surface direction becomes nearly constant, and the ceiling board 4 does not undergo high temperature, thus preventing damage caused by temperature difference or the like.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for manufacturing a semiconductor by generating a plasma and treating a surface of a substrate.

[0002]

2. Description of the Related Art At present, in semiconductor manufacturing, plasma CV is used.
Film formation using a D (Chemical Vapor Deposition) apparatus is known. In a plasma CVD apparatus, a material gas serving as a material of a film is introduced into a film forming chamber in a container to form a plasma state, and a chemical reaction on a substrate surface is promoted by active excited species in the plasma to form a film. It is a device for performing. In order to bring the film formation chamber into a plasma state, the container is provided with an electromagnetic wave transmission window, and power is supplied to an antenna disposed outside the container and electromagnetic waves are incident from the electromagnetic wave transmission window so that the film formation chamber is turned into a plasma. In the state.

[0003]

The electromagnetic wave transmitting window in a conventional semiconductor manufacturing apparatus (plasma CVD apparatus) is made of a material that transmits electromagnetic waves, for example, high-purity alumina, and is weak against temperature differences. On the other hand, when power is supplied to the antenna to make the film formation chamber in a plasma state, the electromagnetic wave transmission window is heated by radiant heat. For this reason, there has been a problem that the electromagnetic wave transmission window is exposed to heat and a temperature difference easily occurs.

The present invention has been made in view of the above circumstances, and has as its object to provide a semiconductor manufacturing apparatus in which a temperature difference does not occur even when an electromagnetic wave transmitting window is exposed to heat.

[0005]

According to the present invention, there is provided a container having an electromagnetic wave transmitting window, an antenna provided outside the container in opposition to the electromagnetic wave transmitting window, and a power supply to the antenna. By transmitting electromagnetic waves from the electromagnetic wave transmitting window into the container to generate plasma and processing the surface of the substrate in the container, a power supply is provided opposite to the electromagnetic wave transmitting window with the antenna interposed therebetween. And a cooling means for supplying a cooling medium.

The cooling means includes a refrigerant tank provided facing the electromagnetic wave transmitting window, a number of nozzles provided in the refrigerant tank directed toward the electromagnetic wave transmitting window, and a pumping means for pumping the cooling medium into the refrigerant tank. It is characterized by consisting of. In addition, a number of nozzles are characterized in that they face the antenna. Further, the cooling means is provided with a cooling chamber provided opposite to the electromagnetic wave transmission window, and the surface of the cooling chamber opposite to the electromagnetic wave transmission window of the antenna is covered with an inner peripheral portion, and the diameter of the inner peripheral portion gradually decreases in the axial direction. It is characterized by comprising a cover portion provided with a cylindrical portion which is opened to the outside of the cooling chamber at the center, and a refrigerant intake provided in the cooling chamber. Further, a radial spiral groove is formed on the inner periphery of the cover portion. Further, the cylinder part of the cover part is provided with a refrigerant suction means.

Further, a temperature deriving means for deriving a temperature distribution in a plane direction of the electromagnetic wave transmitting window, and an operation of the pumping means are controlled according to a result of the temperature deriving means so as to eliminate a temperature difference in the surface direction of the electromagnetic wave transmitting window. Control means. A temperature deriving means for deriving a temperature distribution in a surface direction of the electromagnetic wave transmitting window; and a control means for controlling operation of the refrigerant suction means so as to eliminate a temperature difference in the surface direction in the electromagnetic wave transmitting window according to a result of the temperature deriving means. And characterized in that: Further, the control means is provided with a function of starting the operation of the pressure feeding means when the temperature difference of the temperature distribution exceeds the threshold value. Further, the control means is provided with a function of starting the operation of the refrigerant suction means when the temperature difference of the temperature distribution exceeds the threshold value.

[0008]

1 is a schematic side view of a plasma CVD apparatus as a semiconductor manufacturing apparatus according to a first embodiment of the present invention, and FIG. 2 is a view taken along the line II-II in FIG. is there.

As shown in FIG. 1, a cylindrical container 2 is provided on a base 1, and a film forming chamber 3 is formed in the container 2. A circular ceiling plate 4 is provided on the upper part of the container 2, and a wafer support 5 is provided in the film forming chamber 3 at the center of the container 2. The wafer support 5 has a disk-shaped mounting portion 7 for electrostatically holding a semiconductor substrate 6, and the mounting portion 7 is supported by a support shaft 8. The mounting portion 7 is made of a metal plate 25 such as copper.
Is provided with ceramics 26 such as alumina on the surface thereof. A bias power supply 21 and an electrostatic power supply 22 are connected to the metal plate 25 of the mounting section 7 to generate a low frequency and an electrostatic force on the mounting section 7. The entire height of the wafer support table 5 can be raised and lowered or the support shaft 8 can be expanded and contracted, so that the height in the vertical direction can be adjusted to an optimum height.

An electromagnet 9 is arranged on the outer periphery of the container 2, and the container 2 is surrounded by an annular electromagnet 9. Electromagnet 9
Is composed of an annular iron core 10 and a coil 11 wound around the iron core 10, and the coil 11 has a three-phase inverter power supply 1
2 is connected, and a voltage is applied to the electromagnet 9. Electromagnet 9
Is applied, a magnetic field is generated that rotates substantially parallel to the surface of the substrate 6 placed on the placement unit 7 and rotates around the central axis of the container 2.

On the ceiling plate 4 as an electromagnetic wave transmission window,
For example, a high-frequency antenna 13 as a circular ring-shaped antenna is arranged, and a matching device 14
The high frequency power supply 15 is connected via the. By supplying power to the high-frequency antenna 13, an electromagnetic wave enters the film forming chamber 3 of the container 2. The electromagnetic wave incident on the container 2 is
The gas in the film forming chamber 3 is excited or ionized to generate plasma, and also acts on the magnetic flux in the film forming chamber 3 to generate an electro-magnetic sound wave, which transfers energy to the plasma by Landau damping, thereby forming a film. A strong plasma is generated in the chamber 3.

The container 2 is provided with a gas supply nozzle 16 for supplying a material gas such as silane (for example, SiH ₄ ). The material gas which becomes a film forming material (for example, Si) from the gas supply nozzle 16 into the film forming chamber 3 is provided. Is supplied. The container 2 is provided with an auxiliary gas supply nozzle 17 for supplying an auxiliary gas such as argon, and the base 1 has an exhaust port 18 connected to a vacuum exhaust system (not shown) for exhausting the inside of the container 2. Is provided.

In the above-described plasma CVD apparatus, the substrate 6 is mounted on the mounting portion 7 of the wafer support 5 and is electrostatically attracted. A material gas having a predetermined flow rate is supplied from the gas supply nozzle 16 into the film formation chamber 3, and an auxiliary gas having a treatment flow rate is supplied into the film formation chamber 3 from the auxiliary gas supply nozzle 17.
Is set to a predetermined pressure according to the film forming conditions. Thereafter, power is supplied from the high-frequency power supply 15 to the high-frequency antenna 13 to generate a high frequency, and power is supplied from the bias power supply 21 to the mounting section 7 to generate a low frequency. At the same time, a voltage is applied from the three-phase inverter power supply 12 to the electromagnet 9, and a rotating magnetic field is generated in the film forming chamber 3.

As a result, the material gas in the film forming chamber 3 is discharged, and a part of the material gas becomes a plasma state. Charged particles such as electrons or ions in the plasma rotate so as to wrap around the lines of magnetic force of the rotating magnetic field, and move while being influenced by the electric field. Therefore, high-density and uniform-density plasma remains in the film formation region. This plasma collides with other neutral molecules in the material gas to further ionize or excite the neutral molecules. The active particles thus generated are adsorbed on the surface of the substrate 6 and cause a chemical reaction efficiently, and are deposited to form a CV.
It becomes a D film. That is, a function of forming a film by plasma is configured as a processing unit. In addition, as an example of the processing unit, an apparatus that forms a parallel magnetic field and performs film formation by plasma is used.
It is also possible to apply an apparatus for performing other processing such as etching other than film formation.

As described above, when electric power is supplied to the high-frequency antenna 13, electromagnetic waves pass through the ceiling plate 4 and generate plasma in the film forming chamber 3. For this reason, the ceiling plate 4 serves as an electromagnetic wave transmitting window, and is made of, for example, high-purity alumina. The ceiling plate 4 is heated by heat from plasma when the electromagnetic wave is transmitted.

A flat cylindrical refrigerant tank 31 is fixed to the container 2 above the high frequency antenna 13 above the ceiling plate 4, and the refrigerant tank 31 is provided with a number of nozzles 32 directed toward the high frequency antenna 13. I have. As shown in FIG. 2, the nozzle 32 has a circular ring-shaped high-frequency antenna 13.
, And is provided in a ring state except for the central portion. This is because the ceiling plate 4 at the portion facing the high-frequency antenna 13 is easily heated, and the central portion is not easily heated. An air pipe 33 for supplying air as a cooling medium is connected to the refrigerant tank 31, and the air pipe 33 is provided with a blower 34 as a pressure feeding means.

Therefore, the operation of the blower 34 causes the air pipe 3
Air is pressure-fed from 3 to the refrigerant tank 31, and air is jetted from the nozzle 32 toward the high-frequency antenna 13 (toward the ceiling plate 4). As a result, the ceiling plate 4 is cooled by the air around the portion that is likely to be heated facing the high frequency antenna 13 (cooling means). The air that has cooled the ceiling plate 4 is discharged to the outside. Although the nozzle 32 is provided in the refrigerant tank 31 in a ring state except for the central portion, the nozzle 32 may be provided in the refrigerant tank 31 so as to face the entire surface of the ceiling plate 4.

On the other hand, infrared thermometers 35 as temperature deriving means are provided at several places on the surface of the refrigerant tank 31 facing the ceiling plate 4, and the temperature of each part of the ceiling plate 4 is measured by the infrared thermometer 35. The temperature distribution in the plane direction is detected. The detection information of the infrared thermometer 35 is input to the control means 36, and the blower 3 is sent from the control means 36 in accordance with the detection information of the infrared thermometer 35.
An operation command is output to 4. Specifically, when the temperature difference in the surface direction of the ceiling plate 4 exceeds the threshold value, an operation command is output to the blower 34, and air is blown out to the ceiling plate 4 around a portion that is likely to be heated, and the temperature is increased. Ceiling board 4 to eliminate the difference
Is cooled. For this reason, even if the ceiling plate 4 is heated by the heat from the plasma when the electromagnetic wave is transmitted, the nozzle 32
It is cooled by the jetted air, so that a large temperature difference does not occur in the ceiling plate 4.

Although the blower 34 is operated based on the temperature difference, the blower 34 may be operated based on information such as the absolute temperature of the ceiling plate 4 to eject air. Also, the blower 34 is always operated to allow air to flow through the ceiling plate 4.
Alternatively, the film may be formed while being ejected. Also,
As the temperature detecting means, a relation between time and the temperature distribution may be stored in advance, and the temperature distribution may be estimated as time elapses. Further, it is also possible to provide a detecting means such as a thermocouple.

In the above-described semiconductor manufacturing apparatus, the blower 34
The air is pressure-fed from the air pipe 33 to the refrigerant tank 31 by the operation of, and air is ejected from the nozzle 32 toward the high-frequency antenna 13 (toward the ceiling plate 4). At the center, the ceiling plate 4 is cooled by air so that the temperature distribution in the plane direction is substantially constant. Therefore, the ceiling plate 4 is not exposed to high temperatures, and the temperature difference does not cause the ceiling plate 4 to be damaged.

A second embodiment of the present invention will be described with reference to FIGS. FIG. 3 is a schematic side view of a plasma CVD apparatus as a semiconductor manufacturing apparatus according to a second embodiment of the present invention, and FIG. 4 is a view taken along line IV-IV in FIG. still,
The same members as those of the first embodiment shown in FIGS. 1 and 2 are denoted by the same reference numerals, and duplicate description is omitted.

A cylindrical cooling chamber 41 is formed in the container 2 above the high frequency antenna 13 above the ceiling plate 4, and the ceiling plate 4 and the high frequency antenna 13 are covered by the cooling chamber 41. Inside the cooling chamber 41, a funnel-shaped cover 42 made of Teflon (registered trademark) is provided. The cover 42
It is arranged with the funnel upside down. The cover 42
The surface of the high-frequency antenna 13 on the side opposite to the ceiling plate 4 is covered with an inner peripheral portion 43 in the cooling chamber 41, and the diameter of the inner peripheral portion 43 gradually decreases upward in the axial direction.
Is fixed at the top. At the center of the cover 42, a tubular portion 44 that is open to the outside of the cooling chamber 41 is attached. That is, the cover member is constituted by the cover 42 and the cylindrical portion 44.

In the upper wall on the outer peripheral side of the cooling chamber 41, air holes 45 are formed at a plurality of locations as refrigerant inlets which open to the outside. As shown in FIG. 2, a radial spiral groove 46 is formed in the inner peripheral portion 43 of the cover 42. Further, an electric fan 47 as a refrigerant suction means is provided at an upper portion of the tube portion 44, and the air in the inner peripheral portion 43 is sucked by the tube portion 44 and exhausted to the outside by the operation of the electric fan 47. Note that the groove 46 can be simply formed radially, and need not be provided.

Accordingly, by operating the electric fan 47 to suck the air in the inner peripheral portion 43 of the cover 42 into the cylindrical portion 44, external air is introduced into the cooling chamber 41 from the air hole 45 and the outside of the cover 42 is Air is sent into the inner peripheral portion 43 from the inside. Then, the ceiling plate 4 is cooled by air from a portion on the outer side that is likely to be heated and faces the high frequency antenna 13 having a circular ring shape (cooling means). The air sent into the inner peripheral portion 43 flows in a swirling state along the radial spiral groove 46, cools the inner side of the ceiling plate 4, moves inward, and moves into the cylindrical portion 44.
And is exhausted to the outside by the electric fan 47.
That is, the ceiling plate 4 is cooled in order from the outer peripheral side to the inner peripheral side so that the temperature distribution becomes substantially uniform.

On the other hand, infrared thermometers 48 as temperature deriving means are provided on the inner peripheral portion 43 of the cover 42 at several places, and the temperature of each part of the ceiling plate 4 (temperature in the surface direction) is measured by the infrared thermometers 48. Temperature distribution) is detected. The detection information of the infrared thermometer 48 is input to the control means 49, and an operation command is output from the control means 49 to the electric fan 47 according to the detection information of the infrared thermometer 48. Specifically, when the temperature difference in the surface direction of the ceiling plate 4 exceeds the threshold value, an operation command is output to the electric fan 47, and air is supplied from an outside portion that is easily heated, and the temperature difference is increased. Ceiling plate 4 is cooled so as to eliminate. Therefore, even if the ceiling plate 4 is heated by the radiant heat when the electromagnetic wave is transmitted, the air in the inner peripheral portion 43 is removed by the cylindrical portion 44.
The ceiling plate 4 is not exposed to high temperature because it is cooled by the air supplied by suction.

Although the electric fan 47 is operated based on the temperature difference, the electric fan 47 may be operated based on information such as the absolute temperature of the ceiling plate 4 to blow air. Alternatively, the film formation may be performed in a state where the electric fan 47 is always operated to suck the air in the inner peripheral portion 43 into the cylindrical portion 44 and supply the air to the ceiling plate 4. Further, as in the first embodiment, it is possible to store the relationship between time and temperature distribution in advance and to estimate the temperature distribution as time elapses, as in the first embodiment. .
Further, it is also possible to provide a detecting means such as a thermocouple.

In the above-described semiconductor manufacturing apparatus, the air in the inner peripheral portion 43 of the cover 42 is sucked into the cylindrical portion 44 by the operation of the electric fan 47, and the external air is introduced into the cooling chamber 41 through the air hole 45 and the high frequency It is sent into the inner peripheral portion 43 from a portion on the outer side that is likely to be heated and faces the antenna 13, and cools the inner side of the ceiling plate 4 in a swirling state along the radial spiral groove 46 to move inward. It is sucked and exhausted by the cylindrical portion 44. For this reason, the ceiling plate 4 is efficiently cooled by the operation of the electric fan 47 having a small power so that the temperature distribution in the surface direction becomes substantially constant. Accordingly, the ceiling plate 4 is not damaged due to the temperature difference.

A third embodiment of the present invention will be described with reference to FIG. FIG. 5 shows a schematic side view of a plasma CVD apparatus as a semiconductor manufacturing apparatus according to a third embodiment of the present invention. The same members as those of the first embodiment and the second embodiment shown in FIGS. 1 to 4 are denoted by the same reference numerals, and duplicate description is omitted.

A cylindrical cooling chamber 41 similar to that shown in FIG. 3 is formed in the container 2 above the high-frequency antenna 13 above the ceiling plate 4, and a funnel-shaped Teflon made in the cooling chamber 41. Cover 42 is provided. At the center of the cover 42, a tubular portion 51 that is open to the outside of the cooling chamber 41 is attached. The tubular portion 51 is longer than the tubular portion 44 shown in FIG. That is, the cover 42 and the cylindrical portion 5
1 forms a cover member. In addition, cooling room 4
An air hole 45 is formed at a plurality of locations on the upper wall on the outer peripheral side of the cover 1 as a refrigerant intake opening to the outside, and a radial spiral groove 46 is formed on an inner peripheral portion 43 of the cover 42.

Therefore, outside air is introduced into the cooling chamber 41 from the air hole 45 and flows into the inner peripheral portion 43 from the outside of the cover 42, and the outside air which is easily heated and faces the high frequency antenna 13 having a circular ring shape. The ceiling plate 4 is cooled by air from the side part (cooling means). The air sent into the inner peripheral portion 43 cools the inner side of the ceiling plate 4 along the radial spiral groove 46, moves inward, and is exhausted from the cylindrical portion 51 to the outside. That is, the ceiling plate 4 is cooled in order from the outer peripheral side to the inner peripheral side so that the temperature distribution becomes substantially uniform.

In the above-described semiconductor manufacturing apparatus, the air hole 45
From outside, the outside air is introduced into the cooling chamber 41 and is sent to the inner peripheral portion 43 from the easily heated outer side facing the high-frequency antenna 13, and the inside of the ceiling plate 4 is formed along the radiation spiral groove 46. The other side is cooled, moves inward, and is exhausted from the cylindrical portion 51 to the outside. For this reason, the ceiling plate 4 is cooled by the natural flow of air so that the temperature distribution in the surface direction becomes substantially constant. Therefore, the ceiling plate 4 is not exposed to a high temperature without using any special power, and the temperature difference does not cause the ceiling plate 4 to be damaged.

[0032]

According to the present invention, there is provided a semiconductor manufacturing apparatus comprising: a container having an electromagnetic wave transmitting window; an antenna provided outside the container in opposition to the electromagnetic wave transmitting window; and an electromagnetic wave transmitted from the electromagnetic wave transmitting window by feeding power to the antenna. A power supply for transmitting plasma into the container to generate plasma and processing the surface of the substrate in the container;
A cooling means is provided opposite to the electromagnetic wave transmitting window with the antenna interposed therebetween and supplies a cooling medium to the electromagnetic wave transmitting window. When the window is cooled and the electromagnetic wave is transmitted therethrough, the electromagnetic wave transmitting window is not exposed to heat, and damage to the electromagnetic wave transmitting window due to a temperature difference can be prevented.

The cooling means includes a refrigerant tank provided facing the electromagnetic wave transmitting window, a number of nozzles provided in the refrigerant tank directed toward the electromagnetic wave transmitting window, and a pumping means for pumping the refrigerant into the refrigerant tank. Therefore, the cooling medium can be injected from a large number of nozzles into the electromagnetic wave transmitting window by the operation of the pumping means, and the electromagnetic wave transmitting window can be reliably cooled. Further, since a number of nozzles are opposed to the antenna, the electromagnetic wave transmission window can be cooled by supplying a cooling medium around a portion that is easily heated, and the temperature distribution in the plane direction can be made uniform.

The cooling means includes a cooling chamber provided opposite the electromagnetic wave transmitting window, and a surface of the cooling chamber opposite to the electromagnetic wave transmitting window of the antenna covered with an inner peripheral portion, and the diameter of the inner peripheral portion is set in the axial direction. Since it is made up of a cover part provided with a cylindrical part that gradually becomes smaller and opens to the outside of the cooling chamber at the center, and a refrigerant intake port provided in the cooling chamber, it is necessary to cool the electromagnetic wave transmission window by flowing a cooling medium in order from the outside to the inside. Thus, even when a ring-shaped antenna is used, the temperature distribution in the plane direction can be easily made uniform.

Further, since a radial spiral groove is formed on the inner periphery of the cover portion, the flow of the cooling medium can be swirled, and cooling can be performed efficiently. Further, since the cylinder portion of the cover portion is provided with the refrigerant suction means, the flow of the cooling medium can be ensured with little power.

Further, the temperature deriving means for deriving the temperature distribution in the plane direction of the electromagnetic wave transmitting window and the operation of the pressure feeding means are controlled in accordance with the result of the temperature deriving means so as to eliminate the temperature difference in the surface direction in the electromagnetic wave transmitting window. Since the control means is provided, cooling can be performed according to the temperature state of the electromagnetic wave transmission window. A temperature deriving means for deriving a temperature distribution in a surface direction of the electromagnetic wave transmitting window; and a control means for controlling operation of the refrigerant suction means so as to eliminate a temperature difference in the surface direction in the electromagnetic wave transmitting window according to a result of the temperature deriving means. Therefore, cooling can be performed according to the temperature state of the electromagnetic wave transmission window.

Further, the control means is provided with a function for starting the operation of the pumping means when the temperature difference of the temperature distribution exceeds the threshold value, so that the pumping means must be operated only when necessary. The electromagnetic wave transmission window can be cooled. Further, the control means has a function to start the operation of the refrigerant suction means when the temperature difference of the temperature distribution exceeds the threshold value. The transmission window can be cooled.

[Brief description of the drawings]

FIG. 1 is a schematic side view of a plasma CVD apparatus as a semiconductor manufacturing apparatus according to a first embodiment of the present invention.

FIG. 2 is a view taken along line II-II in FIG.

FIG. 3 is a schematic side view of a plasma CVD apparatus as a semiconductor manufacturing apparatus according to a second embodiment of the present invention.

FIG. 4 is a view taken along line IV-IV in FIG. 3;

FIG. 5 is a schematic side view of a plasma CVD apparatus as a semiconductor manufacturing apparatus according to a third embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Base 2 Container 3 Film-forming chamber 4 Ceiling plate 5 Wafer support 6 Substrate 7 Placement part 8 Support shaft 9 Electromagnet 10 Iron core 11 Coil 12 Three-phase inverter power supply 13 High frequency antenna 14 Matching device 15 High frequency power supply 16 Gas supply nozzle 17 Auxiliary Gas supply nozzle 18 Exhaust system 21 Bias power supply 22 Electrostatic power supply 25 Metal plate 26 Ceramics 31 Refrigerant tank 32 Nozzle 33 Air tube 34 Blower 35, 48 Infrared thermometer 36, 49 Control means 41 Cooling chamber 42 Cover 43 Inner peripheral part 44 , 51 cylinder part 45 air hole 46 groove 47 electric fan

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yukihiro Otani 2-1-1, Shinhama, Arai-machi, Takasago-shi, Hyogo Prefecture Inside the Takasago Research Laboratory, Mitsubishi Heavy Industries, Ltd. (72) Inventor: Noriaki Ueda 1-1-1 1-1 Mitsubishi Heavy Industries, Ltd. Kobe Shipyard (72) Inventor Kazuto Yoshida 1-1-1, Wadasaki-cho, Hyogo-ku, Kobe-shi, Hyogo F-term (reference) 4K030 FA01 JA10 KA26 KA37 KA39 KA41 5F045 AA08 BB20 DP03 DQ10 EH02 EH11 EH16 EJ04 EJ10

Claims (10)

[Claims] 1. A container having an electromagnetic wave transmitting window, an antenna provided outside the container facing the electromagnetic wave transmitting window, and an electromagnetic wave transmitted through the electromagnetic wave transmitting window into the container by feeding power to the antenna to generate plasma. A semiconductor, comprising: a power supply for generating and processing a surface of a substrate in a container; and cooling means provided to face an electromagnetic wave transmitting window with an antenna interposed therebetween and supplying a cooling medium to the electromagnetic wave transmitting window. manufacturing device. 2. The cooling device according to claim 1, wherein the cooling means includes: a refrigerant tank provided to face the electromagnetic wave transmitting window; a plurality of nozzles provided in the refrigerant tank and directed to the electromagnetic wave transmitting window side;
A semiconductor manufacturing apparatus comprising: a pumping means for pumping a cooling medium into a refrigerant tank. 3. The semiconductor manufacturing apparatus according to claim 2, wherein a number of nozzles face the antenna. 4. The cooling means according to claim 1, wherein the cooling means includes a cooling chamber provided to face the electromagnetic wave transmitting window, and an inner peripheral portion covering the surface of the antenna in the cooling chamber opposite to the electromagnetic wave transmitting window. A semiconductor manufacturing apparatus comprising: a cover portion provided with a cylindrical portion whose diameter gradually decreases in an axial direction and opened to the outside of a cooling chamber at the center; and a refrigerant intake provided in the cooling chamber. 5. The semiconductor manufacturing apparatus according to claim 4, wherein a radial spiral groove is formed on an inner periphery of the cover. 6. The semiconductor manufacturing apparatus according to claim 4, wherein the cylinder of the cover is provided with a refrigerant suction unit. 7. A temperature deriving means for deriving a temperature distribution in a plane direction of an electromagnetic wave transmitting window according to claim 3, and a pressure feeding means for eliminating a temperature difference in a plane direction in the electromagnetic wave transmitting window according to a result of the temperature deriving means. And a control means for controlling the operation of the semiconductor device. 8. A refrigerant suction device according to claim 6, wherein a temperature deriving means for deriving a temperature distribution in a plane direction of the electromagnetic wave transmitting window, and a refrigerant suction so as to eliminate a temperature difference in the surface direction of the electromagnetic wave transmitting window according to a result of the temperature deriving means. Control means for controlling the operation of the means. 9. The semiconductor manufacturing apparatus according to claim 7, wherein the control means has a function of starting the operation of the pressure feeding means when the temperature difference of the temperature distribution exceeds a threshold value. . 10. The semiconductor manufacturing method according to claim 8, wherein the control means has a function of starting the operation of the refrigerant suction means when the temperature difference in the temperature distribution exceeds a threshold value. apparatus.