JP2001342063A - Low temperature-baked ceramic composition, low temperature ceramic, its production method, wiring board using the same and its production method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a ceramic suitable for an insulating substrate which can be baked at a low temperature, can be baked together with a low resistant metal such as gold, silver or copper as a conductive material, has a high thermal conductivity and low dielectric constant and has a high heat dissipation property to shorten a delay time in high frequency signal. SOLUTION: In a wiring board provided with an insulating substrate 1 and a metallized wiring layer 2, the insulating substrate 1 is formed of a ceramic obtained by mixing 5-70 wt.% non-oxide ceramic filler, e.g. AlN, Si3N4 SiC, BN or the like with 30-95 wt.% a borosilicate glass which has a glass transition temperature of below 800 deg.C and has a weight reduction per unit surface of 0.15 g/cm2 or less after the above non-oxide ceramic having the purity of 96 wt.% or higher is immersed for 5 min. in a glass melting liquid melted at 1,200 deg.C, molding into a prescribed shape and then baking at a temperature of 800 to 1,000 deg.C.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a porcelain composition, a porcelain and a method for producing the same, which can be optimally fired at a low temperature for a wiring board or the like applied to a package for accommodating a semiconductor element, a multi-layered wiring board, and the like. Related to the wiring board and its manufacturing method, especially, in order to be able to reduce the signal delay, it is possible to co-fire with a low-resistance conductor material such as copper, silver, and gold, and has a low dielectric constant The present invention also relates to an improvement of a porcelain capable of efficiently dissipating heat generated during operation of an active element such as a semiconductor element.

[0002]

2. Description of the Related Art In recent years, with the era of advanced information technology, with the rapid development of information and communication technology, the speed and size of semiconductor devices have been increasing. Therefore, with the speeding up of semiconductor devices,
The problem of signal delay in packages, substrates, and the like is increasing. At the same time, the problem of thermal resistance in a package, a substrate, or the like due to an increase in the amount of heat generated due to an increase in the size of the semiconductor element is also increasing.

Conventionally, as a ceramic multilayer wiring board, an alumina wiring board in which a wiring layer made of a high melting point metal such as tungsten or molybdenum is formed on the surface or inside of an insulating layer made of alumina ceramics has been most widely used. .

However, in the conventional alumina wiring board,
Tungsten (W) or molybdenum (M
A high melting point metal such as o) has a problem that the signal resistance is large because the conductor resistance is large and the dielectric constant of alumina is as high as about 9. Therefore, it is required to use a low-resistance metal such as copper, silver, or gold as a conductor instead of a metal such as W or Mo, and to further lower the dielectric constant of the insulating layer.

[0005] Therefore, recently, by using glass or glass-ceramic, which is a composite material of glass and ceramic, as an insulating layer, it is possible to fire at a low temperature of 1000 ° C. or less and to use copper, silver, gold or the like having a low melting point. A wiring board made of glass-ceramics, which is capable of using a low-resistance metal as a conductor and having a dielectric constant lower than that of alumina, is being developed.

For example, as disclosed in Japanese Patent Publication No. 4-12639, an insulating layer obtained by adding SiO ₂ -based filler to glass,
A wiring layer made of a low resistance metal such as copper, silver,
A multilayer wiring board co-fired at a temperature of up to 1000 ° C., or a material obtained by adding a filler such as alumina, zirconia, or mullite to a zinc borosilicate glass as disclosed in Fired products and the like have been proposed. In addition, Japanese Patent Application Laid-Open No. 5-298919 proposes a glass ceramic material in which mullite or cordierite is precipitated as a crystal phase.

[0007]

However, in the above-mentioned conventional glass ceramics, the thermal conductivity is as low as about 0.5 to 1.5 W / m · K, and the heat dissipation properties of the conventional alumina are low. It was inferior to etc. Therefore, a wiring board using a glass ceramic obtained by firing AlN having high thermal conductivity and glass, as described in JP-A-63-307182 and JP-A-4-254777, has been proposed.

However, when a non-oxide ceramic such as AlN is used as a filler, the glass reacts with the non-oxide ceramic filler during firing, and the non-oxide ceramic filler decomposes during firing. Gas is generated, and this gas causes problems such as expansion of the porcelain and improvement in dimensional accuracy. In addition, there are problems such as bubbles being generated on the surface of the porcelain, the surface being roughened, and the metallized wiring layer being peeled off. It is difficult to obtain a stable and good porcelain, the yield is low, and there is a serious problem in practical use as an industrial product. In fact, mass production was difficult. Since such a phenomenon is particularly remarkable when firing in an oxidizing atmosphere such as the air, it is extremely difficult to form a wiring layer using silver as a conductor, or poor binder removal occurs when performing copper wiring. There was a problem that it was easy.

Accordingly, the present invention provides a porcelain composition and a porcelain which can be co-fired with a low-resistance metal such as silver, copper, or gold, especially silver, and have a high thermal conductivity and a low dielectric constant. It is an object of the present invention to provide a wiring board with good yield.

[0010]

Means for Solving the Problems As a result of intensive studies on the above-mentioned problems, the present inventor has found that a combination of a borosilicate glass and a non-oxide ceramic filler is heated and melted at 1200 ° C. as the borosilicate glass. After immersing the non-oxide ceramic in the melt for 5 minutes, the weight loss is 0.15 g / c per unit surface area of the ceramic.
By using what is m ² or less, silver, copper, low resistance, such as gold, low-melting-point metal, while enabling co-firing and among others silver, ceramic composition having high thermal conductivity, a low dielectric constant and The present inventors have found that porcelain and a wiring board using the same can be provided with a high yield, and have reached the present invention.

That is, the low-temperature fired porcelain composition of the present invention comprises 30 to 95% by weight of a borosilicate glass and 5 to 70% by weight of a non-oxide ceramic filler, and has a glass transition point of the glass. When the non-oxide ceramic having a purity of 96% by weight or more is immersed for 5 minutes in a glass melt having a temperature of 800 ° C. or less and the glass heated and melted at 1200 ° C., the unit surface area of the ceramic is reduced. Characterized in that glass having a weight of 0.15 g / cm ² or less is used.

Further, the low-temperature fired porcelain of the present invention comprises a non-oxide ceramic phase using the above-described porcelain composition;
A borosilicate-based glass phase, a dense material having a relative density of 95% or more, and a thermal conductivity of 2% or more.
W / m · K or more, and the ratio of the number of circular voids to the total number of voids in cross-sectional observation is 50% or less, and the porcelain is provided with a wiring layer made of a low-resistance metal. It is used as an insulating substrate in a wiring board.

Further, according to the above-described method for producing porcelain, after the above-mentioned porcelain composition is molded into a predetermined shape,
It is fired at a temperature of 00 ° C. or less, and in particular, is characterized in that the firing atmosphere is formed of an oxidizing atmosphere. After printing and applying the conductor paste,
It is characterized by firing at 1000 ° C. or lower.

In the present invention, the non-oxide ceramic filler and the non-oxide ceramic phase are Al
One or more selected from the group consisting of N, Si ₃ N ₄ , SiC, and BN.

As the glass, Pb, Bi, Cu
And the total content of alkali metal elements is 0.5% by weight
The following is most effective in suppressing and controlling the reactivity with the non-oxide ceramic filler. Further, it is desirable that such a glass be partially or entirely crystallized by firing the composition in order to increase strength and thermal conductivity.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION The low-temperature fired porcelain composition of the present invention comprises:
Borosilicate glass in an amount of 30 to 95% by weight, especially 32.5 to
85% by weight, optimally 35 to 75% by weight, non-oxide ceramic filler 5 to 70% by weight, especially 15 to 6%
It consists of 7.5% by weight, optimally 25-65% by weight.

The composition of the glass and the filler is limited to the above range. If the content of the borosilicate glass is less than 30% by weight or the content of the non-oxide ceramic filler is more than 70% by weight, the firing at a low temperature of 1000 ° C. or less is performed. It becomes difficult to densify the composition to a relative density of 95% or more, and if the glass exceeds 95% by weight or the non-oxide ceramic filler is less than 5% by weight, the thermal conductivity of the porcelain is improved. This is because the effect becomes insufficient.

The borosilicate glass has a glass transition point of 800 ° C. or lower, particularly 750 ° C. or lower, and most preferably 70 ° C. or lower.
It is necessary that the temperature be 0 ° C. or less. This is because if the glass transition point is higher than 800 ° C., it becomes difficult to densify the composition during firing at 1000 ° C. or lower.

Further, as the glass used in the present invention, the glass is heated and melted at 1200 ° C. to form a glass melt, and the non-oxide ceramic having a purity of 96% by weight or more is contained in the melt. 0.15 g / cm per unit surface area of the ceramic after immersion for 10 minutes
² or less, especially 0.12 g / cm ² or less, optimally 0.1 g
/ Cm ² or less is important.

The weight reduction of the non-oxide ceramics by the above test is a method for evaluating the reactivity of the glass to be used and the non-oxide ceramics added as a filler during firing. Is 0.1
If it is larger than 5 g / cm ² , the reaction with the non-oxide ceramic filler proceeds, and gas is generated, which deteriorates the dimensional accuracy of the composition and generates bubbles on the surface of the composition. This is because the yield is remarkably reduced, and the generated bubbles are too large, so that dense porcelain cannot be obtained.

The non-oxide ceramic used in the above evaluation method is not particularly limited as long as the non-oxide ceramic filler component used is 96% by weight or more and the relative density is 95% or more. However, even if a well-known sintering aid or the like is included as another component, there is almost no effect on the measured weight loss.

In the present invention, the borosilicate glass is a glass containing SiO ₂ and B ₂ O ₃ as essential components as glass components.
₂ 15 to 70 wt%, the B ₂ O ₃ in which a proportion of 0.5 to 30 wt%, still another component, Mg
It may contain at least one selected from the group consisting of O, CaO, SrO, BaO, ZnO, and Al ₂ O ₃ .

However, as described above, according to the present invention, it is very important to suppress the reactivity with the non-oxide ceramic filler. The reactivity is determined by the above-described evaluation method. In order to suppress the reactivity, it is necessary to appropriately control the composition of the glass, the firing temperature, the firing atmosphere, and the like. In particular, in the glass composition, the total content of Pb, Bi, Cu and the alkali metal element is preferably 0.5% by weight or less, particularly 0.3% by weight or less, and more preferably 0.1% by weight or less. . This is because the specific component is a component that promotes the reaction with the non-oxide ceramic filler, and when these components are present in excess of the above ratio, the weight loss is also reduced to 0.15 g / cm in the evaluation method. There is a risk of exceeding ² .

Further, as the glass to be used, the thermal conductivity and the strength can be improved by crystallizing the glass itself or a composition containing a filler when the composition is fired. Specifically, it is desirable that at least 20%, particularly at least 30%, of the glass be crystallized by firing.

Examples of the crystal phase precipitated by crystallization of glass include well-known crystal phases, for example, SiO ₂ , A
l ₂ O ₃ , SrAl ₂ Si ₂ O ₈ , BaAl ₂ Si ₂ O ₈ , Ca
Al ₂ Si ₂ O ₈ , MgAl ₂ O ₄ , ZnAl ₂ O ₄ , MgS
iO ₃ , Mg ₂ SiO ₄ , Zn ₂ SiO ₄ , Ca ₂ MgSi ₂
O ₇ , Sr ₂ MgSi ₂ O ₇ , Ba ₂ MgSi ₂ O ₇ , CaM
gSi ₂ O ₆ , Mg ₂ Al ₄ Si ₅ O ₁₈ , Zn ₂ Al ₄ Si ₅ O
₁₈ , Mullite. The crystallinity (%) of the glass can be determined by Rietveld analysis.

On the other hand, the non-oxide ceramic filler used in the present invention includes AlN, Si ₃ N ₄ , S
At least one selected from the group consisting of iC and BN, particularly at least one selected from the group consisting of AlN and Si ₃ N ₄ for achieving high thermal conductivity, is desirable. The average particle diameter of the non-oxide ceramic filler in the composition is preferably 0.5 to 30 μm as a powder. This is because when the average particle size is smaller than 0.5 μm, the effect of improving the thermal conductivity is insufficient, and when the average particle size is larger than 30 μm, it is difficult to obtain a uniform molded body.

In the present invention, in order to produce a porcelain, a predetermined organic binder is added to a mixture comprising the above-described composition, and then the mixture is molded into a predetermined shape. As the molding method,
Well-known methods are used, and examples include die pressing, injection molding, casting molding, extrusion molding, cold isostatic pressing, and doctor blade method.

Then, the compact is heated at 400 to 750 ° C.
After decomposing and removing the organic binder component by heating in
Porcelain can be manufactured by firing at 0 ° C. or lower.

Even if the atmosphere is an oxidizing atmosphere such as the atmosphere, the organic binder is removed in the atmosphere because the reactivity between the glass and the non-oxide ceramic is suppressed. It is possible to produce a dense porcelain by firing not only in an inert atmosphere such as nitrogen or a mixed atmosphere of nitrogen / hydrogen but also in an oxidizing atmosphere such as air.

The porcelain produced as described above contains 5 to 70% by weight of a non-oxide ceramic phase and 30 to 95% by weight of a borosilicate glass phase, and has a relative density of 9%.
It has a denseness of 5% or more, particularly 96% or more.

When the reaction between the non-oxide ceramic and the glass proceeds, N ₂ , NOx, NH ₃ , CO, CO
Decomposed gas such as ₂ is generated, and a large number of such gases remain as circular voids in the porcelain. However, according to the present invention, the reaction between the non-oxide ceramic and the glass can be suppressed. Can reduce the occurrence of circular voids. That is, the number of the circular voids is an index of the presence or absence of reactivity. Therefore, in the porcelain of the present invention, in the cross-sectional observation, the voids present in the porcelain are mainly formed in the shape of a deformed gas generated in a sound sintering process, the number of circular voids due to decomposition gas is small,
Specifically, the ratio of the number of circular voids to the total number of voids is 5
A major feature is that it is 0% or less, particularly 40% or less, and further 30% or less.

The discrimination between a circular void and a distorted void is made according to JIS B0621 of the observed void.
Is calculated assuming that the ratio of the roundness due to to the reference circle at that time is 30% or less is a circular void.

Furthermore, the porcelain of the present invention has a high thermal conductivity of 2 W / m · K or more, particularly 2.5 W / m · K or more, and optimally 3 W / m · K or more, due to its characteristics. Have.

In the porcelain of the present invention,
AlN, Si ₃ N ₄ , S
at least one selected from the group consisting of iC and BN, particularly Al
At least one selected from the group consisting of N and Si ₃ N ₄ is contained. These crystal phases are necessary to improve the thermal conductivity of the porcelain.

FIG. 1 is a schematic view for explaining the structure of the porcelain of the present invention. As shown in FIG. 1, the porcelain of the present invention comprises a non-oxide ceramic phase (N) and a borosilicate glass phase (G) around the non-oxide ceramic phase (N) as a matrix phase. Exists. The borosilicate glass phase (G) may be partially or entirely crystallized. Further, the porcelain has a structure in which circular voids (S) and irregularly shaped voids (B) are scattered.

In the porcelain of the present invention, other crystal phases may be present in addition to the non-oxide ceramic phase and the borosilicate glass phase.

As the other crystal phases, oxide crystal phases are particularly desirable, and these oxide crystal phases are added to the non-oxide ceramic filler and the glass as other fillers in the starting composition. Alternatively, it may be precipitated from the glass.

By incorporating an oxide crystal phase other than these non-oxide ceramic phases in the porcelain, the properties of the porcelain obtained, for example, permittivity, dielectric loss, thermal expansion coefficient,
It is possible to control the fracture strength, fracture toughness, thermal conductivity, and the like.

Examples of these oxide crystal phases include Si
O ₂ , Al ₂ O ₃ , SrAl ₂ Si ₂ O ₈ , BaAl ₂ Si ₂ O
₈ , CaAl ₂ Si ₂ O ₈ , ZrO ₂ , TiO ₂ , ZnO, M
gAl ₂ O ₄ , ZnAl ₂ O ₄ , MgSiO ₃ , Mg ₂ SiO
₄ , Zn ₂ SiO ₄ , Ca ₂ MgSi ₂ O ₇ , Sr ₂ MgSi ₂
O ₇ , Ba ₂ MgSi ₂ O ₇ , CaMgSi ₂ O ₆ , Mg ₂ A
_{l 4 Si 5 O 18, Zn} 2 Al 4 Si 5 O 18, at least one can be mentioned from the group of mullite can be selected to suit the application. The oxide crystal phase is not limited to the crystal phases exemplified here.

Furthermore, the porcelain of the present invention has a lower dielectric constant than conventional alumina. This is because, by using borosilicate glass having a low dielectric constant, even when AlN, Si ₃ N ₄ , SiC or the like having a relatively high dielectric constant is used,
This is because the dielectric constant can be kept low, and the porcelain of the present invention has a dielectric constant of 8 or less, further 7.5 or less, and optimally 7.0 or less. Thus, when a high-frequency signal is transmitted to a wiring layer formed on the surface of the porcelain in a wiring board having the porcelain as an insulating substrate, the signal delay time of the high-frequency signal can be reduced, and the insulation in the high-frequency wiring board can be reduced. It is suitable as a substrate.

The composition and the porcelain of the present invention are most useful as an insulating substrate particularly in a wiring substrate having an insulating substrate and a wiring layer. Therefore, FIG. 2 shows a schematic cross-sectional view of a semiconductor element housing package in which a semiconductor element is housed and mounted as a typical example of a wiring board. According to FIG. 2, the package A has a metallized wiring layer 2 formed on the surface and / or inside of an insulating substrate 1, and a plurality of connection electrodes 3 arranged on the lower surface of the insulating substrate 1. Further, a semiconductor element 4 is bonded and fixed to the center of the upper surface of the insulating substrate 1 via an adhesive such as glass or resin, and the semiconductor element 4 is electrically connected to the metallized wiring layer 2 via bonding wires 5. Furthermore, the sealing resin 6
It is sealed by covering with. The semiconductor element 4 and the plurality of connection electrodes 3 formed on the lower surface of the insulating substrate 1 are electrically connected via the metallized wiring layer 2.

According to the present invention, the insulating substrate 1 in the package as shown in FIG. 2 is formed by the above-described porcelain. Further, the metallized wiring layer 2 and the connection electrode 3 are at least one selected from the group consisting of silver, copper and gold.
It is desirable to consist of some kind of low resistance metal.

Next, in order to manufacture a wiring board having a wiring layer using the above-described porcelain, as described above, a composition comprising a non-oxide-based ceramic filler and borosilicate-based glass is suitably used. An organic binder, an organic solvent, a slurry is prepared by mixing with a solvent, and this is conventionally known as a doctor blade method, a calender roll method, or a rolling method,
It is formed into a sheet by a press forming method. Then, after a through-hole is formed in this sheet-like molded body as desired, the through-hole is filled with a metal paste containing at least one of copper, gold, and silver.

Then, a predetermined circuit pattern is formed on the surface of the sheet-like molded body using a metal paste by a screen printing method, a gravure printing method, or the like.
Print and apply so that

Then, after a plurality of sheet-shaped molded articles are aligned and laminated and pressed, an organic component such as an organic binder is removed at 400 to 750 ° C. in an oxidizing atmosphere or a non-oxidizing atmosphere, and then 1000 ° C. or less. By firing in an oxidizing atmosphere or a non-oxidizing atmosphere, a wiring board can be manufactured.

According to the present invention, since the reactivity between the glass and the non-oxide ceramic filler in an oxidizing atmosphere can be suppressed, the wiring layer can be formed of silver. In this case, the sintering temperature is 900 ° C. or lower, and both the removal of organic components and the sintering atmosphere can be performed in an oxidizing atmosphere.

When the wiring layer is formed of copper,
Removal of machine components and sintering atmosphere to N _Two, N_Two/ H_TwoSuch as O
It is necessary to have a non-oxidizing atmosphere.

A semiconductor element is mounted on the surface of the wiring board thus formed and connected to a wiring layer so that signals can be transmitted. As a connection method, the semiconductor element is connected to the wiring layer by directly mounting it on the wiring layer, or by wire bonding, TAB tape, or the like.

Further, a cap made of the same kind of insulating material as the insulating substrate, another insulating material, or a metal having good heat dissipation properties is provided on the surface of the wiring board on which the semiconductor element is mounted, such as glass, resin, brazing material or the like. By bonding with an adhesive, the semiconductor element can be hermetically sealed, whereby a package for housing a semiconductor element can be manufactured.

[0050]

EXAMPLES Five types of glasses having the compositions shown in Table 1 were prepared.

[0051]

[Table 1]

These glasses are put into a platinum crucible,
It was heated and melted at 1200 ° C. for 1 hour in the air. Each of the molten glasses has a purity of 96%, a relative density of 95% or more, and a size of 10 × 10 × 0.5 mm.
N ceramics, Si ₃ N ₄ ceramics, SiC ceramics, and BN ceramics were immersed and immersed for 5 minutes, and the ceramics were pulled up.

The glass attached to the surface of the pulled ceramics was removed with hydrogen fluoride, and the weight loss per unit surface area was calculated. The results are shown in Table 1.

Then, AlN powder, Si ₃ N ₄ powder, SiC powder, non-oxide ceramic powder having an average particle diameter of 0.5 μm or more with respect to each of the above-mentioned crystallized glass powders.
The BN powder was mixed according to the composition shown in Table 2.

Then, an organic binder, a plasticizer, and toluene are added to the mixture to prepare a slurry, and the slurry is used to have a thickness of 30 by a doctor blade method.
A 0 μm green sheet was produced. Then, five green sheets are laminated, and at a temperature of 50 ° C., 100 kg /
Thermocompression bonding was performed by applying a pressure of ² cm ² .

After debinding the obtained laminate at 500 ° C. in the air, it was fired in the air under the conditions shown in Table 2 to obtain porcelain for an insulating substrate. As a result of analyzing the porcelain composition, it was substantially the same as the starting composition.

The central part of the obtained porcelain was mirror-finished to 20
Ten arbitrary locations were photographed with a scanning electron microscope photograph of 0 magnification, the ratio of the number of circular voids / the total number of voids was calculated for each location, and the average is shown in Table 3.

The thermal conductivity of the obtained porcelain was measured by a laser flash method. In addition, In-
A Ga paste was applied to form an electrode, and the dielectric constant was measured at a measurement frequency of 1 MHz using an LCR meter.
The results of the measurement are shown in Table 3. The crystal phases in the porcelain were identified by X-ray diffraction measurement, and are shown in Table 3 in descending order of peak intensity.

Further, for the above green sheet,
Form a via hole, fill with silver paste, print and apply silver paste as a wiring pattern on the sheet surface,
On the bottom surface of the lowermost green sheet, after forming an electrode layer conducting to the internal wiring layer, five layers are laminated and fired under the same conditions as above to form a multilayer of 35 mm square and 1.2 mm thick. Two hundred wiring boards were prepared.

At this time, the dimensional variation was measured, and the ratio of non-defective products having a dimensional accuracy of ± 350 μm was calculated.

For some of the samples, cordierite powder and ZrO ₂ powder were used in place of non-oxide ceramic powders as filler components, and porcelain was similarly prepared and evaluated.

[0062]

[Table 2]

[0063]

[Table 3]

As is clear from the results of Tables 1 to 3, the glass of the present invention has a glass transition point of 800 ° C.
The weight loss after immersing the non-oxide ceramic having a purity of 96% by weight or more in a glass melt obtained by heating and melting the glass at 1200 ° C. for 5 minutes is less than 0.1% per unit surface area of the ceramic. In a porcelain obtained by mixing and firing a borosilicate glass having a weight of 15 g / cm ² or less and a non-oxide ceramic filler at a predetermined ratio, the non-oxide ceramic phase has almost the same amount of filler as the starting composition. The thermal conductivity was 2 W / m · K or more, the dielectric constant was 8 or less, and the dimensional accuracy good product ratio was 85% or more, showing good results.

On the other hand, when the amount of the non-oxide ceramic filler was less than 5% by weight, Sample No. In Examples 1, 8, and 14, the thermal conductivity was lower than 2 W / m · K,
Conversely, Sample No. 1 in which the amount of the non-oxide ceramic filler was more than 70% by weight. In 7, 13, and 20, no dense porcelain could be obtained.

In addition, sample No. 1 using cordierite or ZrO ₂ as the filler instead of the non-oxide ceramic filler was used. 27 and 28, both have a thermal conductivity of 2
A glass that is lower than W / m · K and that has been heated and melted at 1200 ° C. and that has a weight loss of more than 0.15 g / cm ² when a non-oxide ceramic is immersed in a glass melt for 5 minutes is used. Sample No. In Nos. 29, 30, 31, and 32, the glass and the filler reacted during firing to generate gas, and as a result, the dimensional accuracy was significantly reduced.

[0067]

As described above in detail, according to the present invention, as a glass to be compounded with a non-oxide ceramic filler, a glass having a small weight loss of the non-oxide ceramic in a glass melt is used. , It can be fired at a low temperature of 1000 ° C. or less, and can suppress the reactivity between the non-oxide ceramic filler and the glass not only in the non-oxidizing atmosphere but also in the oxidizing atmosphere. In addition, a wiring layer made of a low-resistance metal such as silver, copper, or gold can be formed by simultaneous firing.Furthermore, the porcelain has high thermal conductivity and low dielectric constant. A wiring board capable of reducing the delay time can be manufactured with high dimensional accuracy.

[Brief description of the drawings]

FIG. 1 is a schematic diagram for explaining the structure of porcelain in an insulating substrate according to the present invention.

FIG. 2 is a schematic cross-sectional view for explaining a semiconductor element storage package using the wiring board of the present invention.

[Explanation of symbols]

 G Borosilicate glass phase N Non-oxide ceramic phase A Semiconductor device storage package 1 Insulating substrate 2 Wiring layer 3 Connection electrode 4 Semiconductor device S Circular void B Irritable void

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05K 1/03 610 C04B 35/58 103A 104A

Claims (20)

[Claims] 1. A non-oxide ceramic filler of 5 to 70%.
% By weight, the glass transition point is 800 ° C. or lower, and 1
96 wt% purity in glass melt heated and melted at 200 ° C
A low-temperature borosilicate glass having a weight reduction per unit surface area of 0.15 g / cm ² or less after immersion of the above-mentioned non-oxide ceramic for 5 minutes; Fired porcelain composition. 2. The method according to claim 1, wherein the non-oxide ceramic filler is A
_{lN, Si 3 N 4, SiC} , a low temperature fired ceramic composition according to claim 1, wherein the at least one selected from the group consisting of BN. 3. The low-temperature fired porcelain composition according to claim 1, wherein the total content of Pb, Bi, Cu and alkali metal elements in said glass is 0.5% by weight or less. 4. The low-temperature fired porcelain composition according to claim 1, wherein the borosilicate glass is crystallized by firing the composition. 5. A non-oxide ceramic phase comprising 5 to 70% by weight.
And a porcelain containing a borosilicate glass phase at a ratio of 30 to 95% by weight, a thermal conductivity of 2 W / m · K or more and a relative density of 95% or more, and the total number of voids in cross-sectional observation in the porcelain Low-temperature fired porcelain characterized in that the ratio of the number of circular voids to is 50% or less. 6. The non-oxide ceramic phase comprises AlN,
At least one selected from the group consisting of Si ₃ N ₄ , SiC and BN
6. The low-temperature fired porcelain according to claim 5, comprising a seed. 7. The low-temperature fired porcelain according to claim 5, wherein the total content of Pb, Bi, Cu and an alkali metal element in the porcelain is 0.5% by weight or less. 8. An oxide ceramic crystal phase is precipitated from the borosilicate glass phase.
A low-temperature fired porcelain according to any one of claims 1 to 7. 9. A non-oxide ceramic filler of 5 to 70%.
% By weight, the glass transition point is 800 ° C. or lower, and 1
96 wt% purity in glass melt heated and melted at 200 ° C
A borosilicate glass having a weight reduction per unit surface area of 0.15 g / cm ² or less after immersion of the above non-oxide ceramic for 5 minutes is mixed at a ratio of 30 to 95% by weight. A method for producing a low-temperature fired porcelain, which is fired at a temperature of 1000 ° C. or less after forming into a predetermined shape. 10. The non-oxide-based ceramic is made of Al
_{N, Si 3 N 4, SiC} , a manufacturing method of low-temperature fired porcelain according to claim 9, characterized in that composed of at least one selected from the group consisting of BN. 11. Pb, Bi, and Pb in the borosilicate glass.
The method for producing a low-temperature fired porcelain according to claim 9 or 10, wherein the total content of Cu and the alkali metal element is 0.5% by weight or less. 12. The method of manufacturing a low-temperature fired porcelain according to claim 9, wherein said glass is crystallized by firing. 13. A wiring board, wherein a wiring layer made of a low-resistance metal is formed on the surface and / or inside of the insulating substrate. Wt% and 3% borosilicate glass phase
0-95% by weight, thermal conductivity is 2W / m · K
As described above, a wiring board comprising a porcelain having a relative density of 95% or more, wherein the ratio of the number of circular voids to the total number of voids in cross-sectional observation in the porcelain is 50% or less. 14. The non-oxide-based ceramic phase is Al
_{N, Si 3 N 4, SiC} , a wiring board according to claim 13, characterized in that it consists of at least one selected from the group consisting of BN. 15. The wiring board according to claim 13, wherein the total content of Pb, Bi, Cu and an alkali metal element in said porcelain is 0.5% by weight or less. 16. The wiring substrate according to claim 13, wherein an oxide crystal phase is precipitated from the glass phase. 17. A non-oxide ceramic having a glass transition point of 800.degree.
Borosilicate glass having a weight reduction of 0.15 g / cm ² or less per unit surface area after immersion of the non-oxide ceramic having a purity of 96% by weight or more in a glass melt heated and melted at 0 ° C. for 5 minutes. Is mixed at a ratio of 30 to 95% by weight, and is formed into a predetermined substrate shape.
After printing and applying a conductor paste containing a low-resistance metal,
A method for manufacturing a wiring board, comprising baking at 1000 ° C. or lower. 18. The method according to claim 18, wherein the non-oxide ceramic is Al
_{N, Si 3 N 4, SiC} , method of manufacturing a wiring board according to claim 17, characterized in that it consists of at least one selected from the group consisting of BN. 19. Pb, Bi, and Pb in the borosilicate glass.
19. The method for manufacturing a wiring board according to claim 17, wherein a total content of Cu and an alkali metal element is 0.5% by weight or less. 20. The method for manufacturing a wiring board according to claim 17, wherein said glass is crystallized by firing.