JP2001338873A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2001338873A5 JP2001338873A5 JP2001079661A JP2001079661A JP2001338873A5 JP 2001338873 A5 JP2001338873 A5 JP 2001338873A5 JP 2001079661 A JP2001079661 A JP 2001079661A JP 2001079661 A JP2001079661 A JP 2001079661A JP 2001338873 A5 JP2001338873 A5 JP 2001338873A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001079661A JP4986332B2 (en) | 2000-03-21 | 2001-03-21 | Method for manufacturing semiconductor device |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000079159 | 2000-03-21 | ||
| JP2000-79159 | 2000-03-21 | ||
| JP2000079159 | 2000-03-21 | ||
| JP2001079661A JP4986332B2 (en) | 2000-03-21 | 2001-03-21 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001338873A JP2001338873A (en) | 2001-12-07 |
| JP2001338873A5 true JP2001338873A5 (en) | 2007-06-14 |
| JP4986332B2 JP4986332B2 (en) | 2012-07-25 |
Family
ID=26588010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001079661A Expired - Fee Related JP4986332B2 (en) | 2000-03-21 | 2001-03-21 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4986332B2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003229359A (en) * | 2001-11-29 | 2003-08-15 | Semiconductor Energy Lab Co Ltd | Manufacturing method for semiconductor device |
| US7078322B2 (en) | 2001-11-29 | 2006-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor |
| JP4636487B2 (en) * | 2003-01-08 | 2011-02-23 | サムスン エレクトロニクス カンパニー リミテッド | Method for manufacturing thin film transistor array panel |
| CN101044627B (en) | 2004-09-15 | 2012-02-08 | 株式会社半导体能源研究所 | Semiconductor device |
| JP4935059B2 (en) | 2005-02-17 | 2012-05-23 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
| JP5227563B2 (en) * | 2006-10-26 | 2013-07-03 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP5339322B2 (en) * | 2007-04-20 | 2013-11-13 | 国立大学法人山口大学 | Laser crystal growth method by laser |
| JP5213192B2 (en) * | 2009-05-01 | 2013-06-19 | 株式会社日本製鋼所 | Crystalline film manufacturing method and manufacturing apparatus |
| WO2019234856A1 (en) * | 2018-06-06 | 2019-12-12 | 堺ディスプレイプロダクト株式会社 | Laser annealing method, laser annealing apparatus and method for producing active matrix substrate |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2817613B2 (en) * | 1994-02-23 | 1998-10-30 | 日本電気株式会社 | Method for forming crystalline silicon film |
| JP3433856B2 (en) * | 1995-02-22 | 2003-08-04 | 住友重機械工業株式会社 | Amorphous thin film crystallization method |
| JP3729955B2 (en) * | 1996-01-19 | 2005-12-21 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP2000039628A (en) * | 1998-05-16 | 2000-02-08 | Semiconductor Energy Lab Co Ltd | Semiconductor display device |
| JP2000269133A (en) * | 1999-03-16 | 2000-09-29 | Seiko Epson Corp | Manufacture of thin film semiconductor device |
-
2001
- 2001-03-21 JP JP2001079661A patent/JP4986332B2/en not_active Expired - Fee Related