JP2001334147A - Device and method for plasma treatment - Google Patents
Device and method for plasma treatmentInfo
- Publication number
- JP2001334147A JP2001334147A JP2000157445A JP2000157445A JP2001334147A JP 2001334147 A JP2001334147 A JP 2001334147A JP 2000157445 A JP2000157445 A JP 2000157445A JP 2000157445 A JP2000157445 A JP 2000157445A JP 2001334147 A JP2001334147 A JP 2001334147A
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- Japan
- Prior art keywords
- plasma
- plasma processing
- reaction vessel
- electrodes
- frequency voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、被処理物の表面に
存在する有機物等の異物のクリーニング、レジストの剥
離、有機フィルムの密着性の改善、金属酸化物の還元、
製膜、表面改質などのプラズマ処理に利用されるプラズ
マを発生させるためのプラズマ処理装置、及びこれを用
いたプラズマ処理方法に関するものであり、特に、精密
な接合が要求される電子部品の表面のクリーニングに好
適に応用されるものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to cleaning of foreign substances such as organic substances present on the surface of an object to be processed, peeling of resist, improvement of adhesion of an organic film, reduction of metal oxide,
The present invention relates to a plasma processing apparatus for generating plasma used for plasma processing such as film formation and surface modification, and a plasma processing method using the same. Particularly, the present invention relates to a surface of an electronic component requiring precise bonding. It is preferably applied to the cleaning of.
【０００２】[0002]
【従来の技術】従来より、大気圧下でプラズマ処理を行
うことが試みられている。例えば、特開平２−１５１７
１号公報や特開平３−２４１７３９号公報や特開平１−
３０６５６９号公報には、反応容器内の放電空間に一対
の電極を配置すると共に電極の間に誘電体を設け、放電
空間をＨｅ（ヘリウム）やＡｒ（アルゴン）などの希ガ
スを主成分とするプラズマ生成用ガスで充満し、反応容
器に被処理物を入れると共に電極の間に交流電界を印加
するようにしたプラズマ処理方法が開示されており、誘
電体が配置された電極の間に交流電界を印加することに
より安定的にグロー放電を発生させ、このグロー放電に
よりプラズマ生成用ガスを励起して反応容器内にプラズ
マを生成し、このプラズマにより被処理物の処理を行う
ようにしたものである。2. Description of the Related Art Conventionally, attempts have been made to perform plasma processing under atmospheric pressure. For example, Japanese Unexamined Patent Publication No.
No. 1, JP-A-3-241739 and JP-A-1-241.
JP-A-306569 discloses a method in which a pair of electrodes are arranged in a discharge space in a reaction vessel, a dielectric is provided between the electrodes, and the discharge space is mainly composed of a rare gas such as He (helium) or Ar (argon). There is disclosed a plasma processing method in which an object to be processed is filled with a gas for plasma generation and an AC electric field is applied between electrodes while an AC electric field is applied between electrodes on which a dielectric is arranged. Is applied to stably generate a glow discharge, and the glow discharge excites a plasma generation gas to generate plasma in a reaction vessel, and the plasma is used to process an object to be processed. is there.
【０００３】また、被処理物の特定の部分のみにプラズ
マ処理を行うために、特開平４−３５８０７６号公報、
特開平３−２１９０８２号公報、特開平４−２１２２５
３号公報、特開平６−１０８２５７号公報、特開平１１
−２６０５９７号公報などに開示されているような、大
気圧下でグロー放電によりプラズマ（特にプラズマの活
性種）を被処理物にジェット状に吹き出してプラズマ処
理することが行われている。In order to perform plasma processing only on a specific portion of an object to be processed, Japanese Patent Application Laid-Open No. 4-358076 discloses a method.
JP-A-3-219082, JP-A-4-21225
3, JP-A-6-108257 and JP-A-11
As disclosed in, for example, JP-A-260597, plasma processing (particularly, active species of plasma) is blown out to an object to be processed by glow discharge under atmospheric pressure to perform plasma processing.
【０００４】このようなプラズマ処理装置としては、例
えば、図８に示すようなものを例示することができる。
２は角筒状の反応容器であって、反応容器２の上端はガ
ス導入口１０として開口されていると共に反応容器２の
下端は吹き出し口１として開口されている。また、反応
容器２の外周に上下一対の電極３、４が設けられてい
る。電極３、４には高周波を発生する電源１１がインピ
ーダンス整合器１２を介して接続されており、上側の一
方の電極３が高圧電極として、下側の他方の電極４が接
地（低圧）電極としてそれぞれ形成されている。インピ
ーダンス整合器１２は、電極３、４の間に対応する位置
において反応容器２内に形成されるプラズマ発生部１３
と電源１１との間のインピーダンス整合を得るためのも
のである。As such a plasma processing apparatus, for example, the one shown in FIG. 8 can be exemplified.
Reference numeral 2 denotes a rectangular cylindrical reaction vessel. The upper end of the reaction vessel 2 is opened as a gas inlet 10, and the lower end of the reaction vessel 2 is opened as an outlet 1. A pair of upper and lower electrodes 3 and 4 are provided on the outer periphery of the reaction vessel 2. A power supply 11 for generating a high frequency is connected to the electrodes 3 and 4 via an impedance matching device 12, one upper electrode 3 serving as a high voltage electrode and the other lower electrode 4 serving as a ground (low voltage) electrode. Each is formed. The impedance matching unit 12 includes a plasma generating unit 13 formed in the reaction vessel 2 at a position corresponding to between the electrodes 3 and 4.
This is for obtaining impedance matching between the power supply 11 and the power supply 11.
【０００５】そして、ガス導入口１０から反応容器２内
にプラズマ生成用ガスを導入すると共に電極３、４に電
源１１で発生した高周波電圧を印加することによって、
プラズマ発生部１３にプラズマを点灯させて放電（グロ
ー放電）を開始させ、この後、プラズマ発生部１３に高
周波電圧を印加し続けることによってプラズマ発生部１
３でプラズマを連続的に生成し、このプラズマをプラズ
マ発生部１３から流下させて反応容器２の吹き出し口１
から吹き出すようにするのである。[0005] Then, by introducing a plasma generating gas into the reaction vessel 2 from the gas inlet 10 and applying a high frequency voltage generated by the power supply 11 to the electrodes 3 and 4,
The plasma generator 13 is turned on by plasma to start discharge (glow discharge), and thereafter, by continuously applying a high-frequency voltage to the plasma generator 13, the plasma generator 1 is turned on.
3, plasma is continuously generated, and the plasma is caused to flow down from the plasma generating unit 13 so that the outlet 1 of the reaction vessel 2
It blows out from.
【０００６】[0006]
【発明が解決しようとする課題】上記のようなプラズマ
処理装置においては、大気圧近傍の圧力下（９３．３〜
１０６．７ｋＰａ（７００〜８００Ｔｏｒｒ））での放
電であるために、放電維持のために必要な高周波電圧が
１ｋＶ以上もの高電圧になってしまうものであり、ま
た、電極３、４に印加する高周波電圧の周波数（電源周
波数）も１３．５６ＭＨｚに代表されるような高周波で
あるために、電極３、４からの放射ノイズが多くなると
いう問題があった。In the above-described plasma processing apparatus, a pressure near the atmospheric pressure (93.3 to
Since the discharge is performed at 106.7 kPa (700 to 800 Torr), the high frequency voltage required for maintaining the discharge becomes as high as 1 kV or more, and the high frequency voltage applied to the electrodes 3 and 4 is increased. Since the frequency of the voltage (power supply frequency) is also a high frequency represented by 13.56 MHz, there is a problem that the radiation noise from the electrodes 3 and 4 increases.
【０００７】この問題を解決する一つの手法として、ア
ルミニウムなどの導電性材料でシールドケースを形成
し、このシールドケースでプラズマ発生部１３や電極
３、４などを覆ってシールドする方法が有効であるが、
シールドを完全なものとするためには装置全体を覆う大
きなシールドケースが必要となって装置が大型化すると
いう問題があった。As one method for solving this problem, it is effective to form a shield case with a conductive material such as aluminum and cover the plasma generating portion 13, the electrodes 3, 4 and the like with the shield case. But,
In order to complete the shield, a large shield case that covers the entire device is required, and there has been a problem that the device becomes large.
【０００８】本発明は上記の点に鑑みてなされたもので
あり、大型化することなく放射ノイズを極力低減するこ
とができるプラズマ処理装置及びこれを用いたプラズマ
処理方法を提供することを目的とするものである。The present invention has been made in view of the above points, and has as its object to provide a plasma processing apparatus and a plasma processing method using the plasma processing apparatus, which can reduce radiation noise as much as possible without increasing the size. Is what you do.
【０００９】[0009]
【課題を解決するための手段】本発明の請求項１に係る
プラズマ処理装置は、大気圧近傍の圧力下で、片側を吹
き出し口１として開放させた反応容器２内に高周波電圧
を印加することによりプラズマを生成し、生成したプラ
ズマを反応容器２の吹き出し口１よりジェット状に吹き
出すプラズマ処理装置において、反応容器２内に高周波
電圧を印加するための対をなす電極３、４と、対をなす
電極３、４に逆位相の高周波電圧を印加するための逆位
相印加手段５とを備えて成ることを特徴とするものであ
る。According to a first aspect of the present invention, there is provided a plasma processing apparatus for applying a high-frequency voltage to a reaction vessel 2 having one side opened as an outlet 1 under a pressure close to the atmospheric pressure. In the plasma processing apparatus that generates plasma by jetting the generated plasma from the outlet 1 of the reaction vessel 2 in a jet state, the pair of electrodes 3 and 4 for applying a high-frequency voltage into the reaction vessel 2 An anti-phase applying means 5 for applying an anti-phase high frequency voltage to the electrodes 3 and 4 to be formed is provided.
【００１０】また、本発明の請求項２に係るプラズマ処
理装置は、請求項１の構成に加えて、前記対をなす電極
３、４に印加する逆位相の高周波電圧が、各位相で振幅
が同一であることを特徴とするものである。In the plasma processing apparatus according to a second aspect of the present invention, in addition to the configuration of the first aspect, the high-frequency voltages having opposite phases applied to the paired electrodes 3 and 4 have an amplitude in each phase. It is the same.
【００１１】また、本発明の請求項３に係るプラズマ処
理装置は、請求項１又は２の構成に加えて、前記逆位相
印加手段５が、一次巻線６と二次巻線７を有すると共に
二次巻線７の経路間で接地されたトランスで形成されて
成ることを特徴とするものである。Further, in the plasma processing apparatus according to claim 3 of the present invention, in addition to the structure of claim 1 or 2, the anti-phase applying means 5 has a primary winding 6 and a secondary winding 7 and It is characterized by being formed by a transformer grounded between the paths of the secondary winding 7.
【００１２】また、本発明の請求項４に係るプラズマ処
理装置は、請求項３の構成に加えて、前記トランスが同
軸空芯トランスであることを特徴とするものである。Further, in the plasma processing apparatus according to a fourth aspect of the present invention, in addition to the configuration of the third aspect, the transformer is a coaxial air core transformer.
【００１３】また、本発明の請求項５に係るプラズマ処
理装置は、請求項３の構成に加えて、前記トランスが、
板状の絶縁体８の片面に一次巻線６として渦巻き状の電
流路９を形成すると共に板状の絶縁体８の他の片面に二
次巻線７として渦巻き状の電流路１０を形成したトラン
スであることを特徴とする請求項３に記載のプラズマ処
理装置。According to a fifth aspect of the present invention, in the plasma processing apparatus according to the third aspect, in addition to the configuration of the third aspect, the transformer includes:
A spiral current path 9 was formed as a primary winding 6 on one side of a plate-shaped insulator 8 and a spiral current path 10 was formed as a secondary winding 7 on the other side of the plate-shaped insulator 8. The plasma processing apparatus according to claim 3, wherein the plasma processing apparatus is a transformer.
【００１４】本発明の請求項６に係るプラズマ処理方法
は、請求項１乃至５のいずれかに記載のプラズマ処理装
置の吹き出し口１の下方に被処理物２１を配置し、吹き
出し口１より吹き出すプラズマＰを被処理物２１に供給
することを特徴とするものである。According to a sixth aspect of the present invention, there is provided a plasma processing method according to any one of the first to fifth aspects, wherein an object to be processed 21 is arranged below the outlet 1 of the plasma processing apparatus and blows out from the outlet 1. It is characterized in that the plasma P is supplied to the workpiece 21.
【００１５】[0015]
【発明の実施の形態】以下、本発明の実施の形態を説明
する。Embodiments of the present invention will be described below.
【００１６】図１に実施の形態の一例を示す。このプラ
ズマ処理装置は反応容器２、対をなす（一対の）電極
３、４、電源１１、逆位相印加手段５などを備えて形成
されている。反応容器２は高融点の絶縁材料（誘電体材
料）で幅広の角形筒状に形成されるものであって、その
上面はガス導入口１０として略全面に亘って開口されて
いると共に反応容器２の下面には図２に示すようにスリ
ット状の吹き出し口１が反応容器２の幅広方向に長く形
成されており、この吹き出し口１を設けることにより反
応容器２は片側（下側）に向いて開放されている。反応
容器２を形成する絶縁材料として、石英、アルミナ、イ
ットリア部分安定化ジルコニウムなどのガラス質材料や
セラミック材料などを例示することができる。FIG. 1 shows an example of the embodiment. The plasma processing apparatus includes a reaction vessel 2, electrodes (pairs) 3 and 4, which form a pair, a power supply 11, an anti-phase applying means 5, and the like. The reaction vessel 2 is made of a high-melting point insulating material (dielectric material) and is formed in a wide rectangular tube shape. As shown in FIG. 2, a slit-shaped outlet 1 is formed long in the width direction of the reaction vessel 2 on the lower surface of the reaction vessel 2. By providing the outlet 1, the reaction vessel 2 faces one side (downward). It is open. Examples of the insulating material forming the reaction vessel 2 include a glassy material such as quartz, alumina, and partially stabilized zirconium yttria, and a ceramic material.
【００１７】電極３、４は、例えば、銅、アルミニウ
ム、真鍮、耐食性の高いステンレス鋼（ＳＵＳ３０４な
ど）などの導電性の金属材料で形成することができる。
また、電極３、４はその内面が反応容器２の外周面の形
状に合致するように、平面視で略ロ字状の角形環状に
（角リング状）に形成されている。そして、電極３、４
はその内周面を反応容器２の外周面に接触させ且つ反応
容器２を全周に亘って囲うように挿着されて反応容器２
の外側に配置されている。このようにして反応容器２の
外周面には、対をなす一対の電極３、４が上下に対向し
て設けられており、また、電極３、４の間の空間に対応
する位置において反応容器２内の空間がプラズマ発生部
１３として形成されている。尚、電極３、４の間隔はプ
ラズマを安定に生成するために３〜２０ｍｍに設定する
のが好ましい。また、電極３、４はそれぞれ複数個設け
ても良い。The electrodes 3 and 4 can be formed of a conductive metal material such as, for example, copper, aluminum, brass, and stainless steel having high corrosion resistance (such as SUS304).
Further, the electrodes 3 and 4 are formed in a substantially ring shape (square ring shape) in a substantially rectangular shape in plan view so that the inner surfaces thereof match the shape of the outer peripheral surface of the reaction vessel 2. And the electrodes 3, 4
Is inserted so as to bring the inner peripheral surface thereof into contact with the outer peripheral surface of the reaction vessel 2 and surround the reaction vessel 2 over the entire periphery thereof.
It is arranged outside. In this manner, a pair of electrodes 3 and 4 forming a pair are provided on the outer peripheral surface of the reaction vessel 2 so as to face up and down, and the reaction vessel is positioned at a position corresponding to the space between the electrodes 3 and 4. The space in 2 is formed as a plasma generation unit 13. The distance between the electrodes 3 and 4 is preferably set to 3 to 20 mm in order to generate plasma stably. Further, a plurality of electrodes 3 and 4 may be provided respectively.
【００１８】上記の電極３、４には逆位相印加手段５が
電気的に接続されている。逆位相印加手段５は電源１１
で発生させた高周波電圧を電極３と電極４に逆位相で印
加するためのものであり、一次巻線６と二次巻線７を備
えたトランスで形成されている。一次巻線６及び二次巻
線７はそれぞれ巻方向を一定に形成されている。一次巻
線６はインピーダンス整合器１２に電気的に接続されて
おり、これにより、逆位相印加手段５はインピーダンス
整合器１２に電気的に接続されている。逆位相印加手段
５の二次巻線７の一端３０は上側の電極３に、二次巻線
７の他端３１は下側の電極４にそれぞれ電気的に接続さ
れている。また、二次巻線７にはその経路間（経路の途
中）において中間タップ２０が設けられており、中間タ
ップ２０を接地するようにしている。そして、インピー
ダンス整合器１２は電源１１と電気的に接続されてい
る。An anti-phase applying means 5 is electrically connected to the electrodes 3 and 4 described above. The anti-phase applying means 5 includes a power supply 11
Is applied to the electrodes 3 and 4 in opposite phases to each other, and is formed by a transformer having a primary winding 6 and a secondary winding 7. The primary winding 6 and the secondary winding 7 are each formed in a constant winding direction. The primary winding 6 is electrically connected to the impedance matching device 12, whereby the anti-phase applying means 5 is electrically connected to the impedance matching device 12. One end 30 of the secondary winding 7 of the antiphase applying means 5 is electrically connected to the upper electrode 3, and the other end 31 of the secondary winding 7 is electrically connected to the lower electrode 4. Further, the secondary winding 7 is provided with an intermediate tap 20 between the paths (midway of the path), and the intermediate tap 20 is grounded. The impedance matching device 12 is electrically connected to the power supply 11.
【００１９】上記のように形成されるプラズマ処理装置
では、プラズマ生成用ガスとして不活性ガス（希ガス）
あるいは不活性ガスと反応ガスの混合気体を用いる。不
活性ガスとしては、ヘリウム、アルゴン、ネオン、クリ
プトンなどを使用することができるが、放電の安定性や
経済性を考慮すると、アルゴンやヘリウムを用いるのが
好ましい。また反応ガスの種類は処理の内容によって任
意に選択することができる。例えば、被処理物の表面に
存在する有機物のクリーニング、レジストの剥離、有機
フィルムのエッチングなどを行う場合は、酸素、空気、
ＣＯ2、Ｎ2Ｏなどの酸化性ガスを用いるのが好ましい。
また反応ガスとしてＣＦ4などのフッ素系ガスも適宜用
いることができ、シリコンなどのエッチングを行う場合
にはこのフッ素系ガスを用いるのが効果的である。また
金属酸化物の還元を行う場合は、水素、アンモニアなど
の還元性ガスを用いることができる。反応ガスの添加量
は不活性ガスの全量に対して１０重量％以下、好ましく
は０．１〜５重量％の範囲である。反応ガスの添加量が
０．１重量％未満であれば、処理効果が低くなる恐れが
あり、反応ガスの添加量が１０重量％を超えると、放電
が不安定になる恐れがある。In the plasma processing apparatus formed as described above, an inert gas (rare gas) is used as a plasma generating gas.
Alternatively, a mixed gas of an inert gas and a reaction gas is used. As the inert gas, helium, argon, neon, krypton, or the like can be used, but it is preferable to use argon or helium in consideration of discharge stability and economy. The type of the reaction gas can be arbitrarily selected depending on the content of the treatment. For example, when performing cleaning of an organic substance present on the surface of the object to be processed, stripping of a resist, etching of an organic film, etc., oxygen, air,
It is preferable to use an oxidizing gas such as CO 2 or N 2 O.
In addition, a fluorine-based gas such as CF 4 can be appropriately used as a reaction gas, and when etching silicon or the like, it is effective to use this fluorine-based gas. When reducing a metal oxide, a reducing gas such as hydrogen or ammonia can be used. The addition amount of the reaction gas is 10% by weight or less, preferably 0.1 to 5% by weight, based on the total amount of the inert gas. If the addition amount of the reaction gas is less than 0.1% by weight, the treatment effect may be reduced. If the addition amount of the reaction gas exceeds 10% by weight, the discharge may become unstable.
【００２０】そして、プラズマ処理装置を用いてプラズ
マ処理を行うにあたっては、次のようにして行う。ま
ず、大気圧近傍の圧力下において、ガス導入口１０から
反応容器２の内部にプラズマ生成用ガスを上から下に向
かって流して導入すると共にインピーダンス整合器１２
及び逆位相印加手段５を介して電源１１で発生させた高
周波電圧を電極３、４に印加する。この時、逆位相印加
手段５により一方の電極３に印加される高周波電圧の位
相と他方の電極４に印加される高周波電圧の位相とは互
いに逆になるものである。そして、この電極３、４への
高周波電圧の印加によりプラズマ発生部１３に高周波電
圧を印加してプラズマ発生部１３でグロー状の放電を発
生させ、この放電によりプラズマ生成用ガスからプラズ
マを生成する。プラズマ点灯後にプラズマ発生部１３で
プラズマを連続的に生成するためには、電極３、４に印
加する高周波電圧は０．５〜１ｋＶに、また、プラズマ
発生部１３に印加される高周波電界の周波数は１ｋＨｚ
〜２００ＭＨｚに、さらに、プラズマ発生部１３に印加
される印加電力は２０〜３５００Ｗ／ｃｍ3にそれぞれ
設定するのが好ましい。尚、印加電力の密度（Ｗ／ｃｍ
3）は（印加電力／プラズマ発生部１３の体積）で定義
される。この後、図６に示すように、プラズマ発生部１
３で生成されたプラズマＰを吹き出し口１から下方にジ
ェット状（連続的）に流出させて吹き出し口１の下側に
配置された被処理物２１の表面にプラズマを吹き付ける
ようにする。このようにして被処理物２１のプラズマ処
理を行うことができる。このプラズマ処理装置では吹き
出し口１を幅広のスリット状に形成したので、一度に被
処理物２１の幅方向の広い範囲にプラズマを供給するこ
とができ、スポット状にプラズマを吹き出すものに比べ
て、効率よくプラズマ処理を行うことができるものであ
る。Then, when performing the plasma processing using the plasma processing apparatus, it is performed as follows. First, under a pressure close to the atmospheric pressure, a plasma generating gas is introduced from the gas inlet 10 into the reaction vessel 2 by flowing from the top to the bottom, and the impedance matching unit 12 is introduced.
Then, a high-frequency voltage generated by the power supply 11 is applied to the electrodes 3 and 4 via the antiphase application means 5. At this time, the phase of the high frequency voltage applied to one electrode 3 by the opposite phase applying means 5 and the phase of the high frequency voltage applied to the other electrode 4 are opposite to each other. Then, a high-frequency voltage is applied to the electrodes 3 and 4 to apply a high-frequency voltage to the plasma generation unit 13 to generate a glow-like discharge in the plasma generation unit 13, and the discharge generates plasma from the plasma generation gas. . In order to continuously generate plasma in the plasma generation unit 13 after the plasma is turned on, the high frequency voltage applied to the electrodes 3 and 4 is set to 0.5 to 1 kV, and the frequency of the high frequency electric field applied to the plasma generation unit 13 Is 1 kHz
Preferably, the applied electric power applied to the plasma generator 13 is set to 20 to 3500 W / cm 3 , respectively. The density of the applied power (W / cm
3 ) is defined by (applied power / volume of plasma generating unit 13). Thereafter, as shown in FIG.
The plasma P generated in step 3 is jetted downward (continuously) from the outlet 1 in the form of a jet (continuously) so that the plasma is blown onto the surface of the workpiece 21 disposed below the outlet 1. Thus, the plasma processing of the processing target 21 can be performed. In this plasma processing apparatus, the outlet 1 is formed in a wide slit shape, so that plasma can be supplied to a wide area in the width direction of the processing target 21 at a time. The plasma processing can be performed efficiently.
【００２１】本発明のプラズマ処理装置では、逆位相印
加手段５としてコイルである一次巻線６と二次巻線７を
備えたトランスを用い、二次巻線７の巻方向を一定に
し、二次巻線７の一端３０を上側の電極３に、二次巻線
７の他端３１を下側の電極４にそれぞれ接続し、二次巻
線７の途中に設けた中間タップ２０を接地するので、電
源１１を用いて一次巻線６へ高周波電流を通電すること
によって二次巻線７に電磁誘導により高周波電流を発生
させると共に二次巻線７に生じた高周波電流により電極
３、４の間の任意の電位（中間タップ２０の電位）を基
準電位点として電極３と電極４に互いに逆位相の高周波
電圧を印加することができる。従って、基準電位点（接
地点）より計測した各電極３、４に印加される高周波電
圧の値は、対をなす電極３、４の間の高周波電圧の値よ
りも低い値となり、このことで、電極３、４からの放射
ノイズを小さくすることができる。In the plasma processing apparatus of the present invention, a transformer having a primary winding 6 and a secondary winding 7 as coils is used as the anti-phase applying means 5, and the winding direction of the secondary winding 7 is fixed. One end 30 of the secondary winding 7 is connected to the upper electrode 3, the other end 31 of the secondary winding 7 is connected to the lower electrode 4, and the intermediate tap 20 provided in the middle of the secondary winding 7 is grounded. Therefore, a high-frequency current is applied to the primary winding 6 by using the power supply 11 to generate a high-frequency current by electromagnetic induction in the secondary winding 7 and the high-frequency current generated in the secondary winding 7 causes the electrodes 3 and 4 High-frequency voltages having phases opposite to each other can be applied to the electrodes 3 and 4 with an arbitrary potential between them (the potential of the intermediate tap 20) as a reference potential point. Therefore, the value of the high-frequency voltage applied to each of the electrodes 3 and 4 measured from the reference potential point (ground point) is lower than the value of the high-frequency voltage between the paired electrodes 3 and 4, which means that And the radiation noise from the electrodes 3 and 4 can be reduced.
【００２２】また、中間タップ２０の位置は任意である
が、二次巻線７の一端３０と中間タップ２０の間の巻数
と、二次巻線７の他端３１と中間タップ２０の間の巻数
とが同一になるように、中間タップ２０の位置を二次巻
線７の中間に設けるのが好ましく、このことで、二次巻
線７の一端３０に発生する高周波電圧の振幅と、二次巻
線７の他端３１に発生する高周波電圧の振幅とが同一に
なって、各電極３、４に振幅が同一の高周波電圧を印加
することができる。従って、中間タップ２０の位置を二
次巻線７の中間以外に設ける場合に比べて、基準電位点
（接地点）より計測した各電極３、４に印加される高周
波電圧の値が最小となり、電極３、４からの放射ノイズ
を最小にすることができる。Although the position of the intermediate tap 20 is arbitrary, the number of turns between one end 30 of the secondary winding 7 and the intermediate tap 20 and the number of turns between the other end 31 of the secondary winding 7 and the intermediate tap 20 are different. Preferably, the position of the intermediate tap 20 is provided in the middle of the secondary winding 7 so that the number of turns is the same, whereby the amplitude of the high-frequency voltage generated at one end 30 of the secondary winding 7 and the The amplitude of the high-frequency voltage generated at the other end 31 of the next winding 7 becomes the same, and a high-frequency voltage having the same amplitude can be applied to each of the electrodes 3 and 4. Therefore, the value of the high-frequency voltage applied to each of the electrodes 3 and 4 measured from the reference potential point (ground point) becomes minimum, as compared with the case where the position of the intermediate tap 20 is provided other than in the middle of the secondary winding 7, The radiation noise from the electrodes 3 and 4 can be minimized.
【００２３】通常、高周波電圧を電極３、４に印加する
と、空間中へ放射される放射ノイズは印加される高周波
電圧の振幅に依存し、高周波電圧の振幅が大きくなるほ
ど放射ノイズの量が増えて大きくなる。従って、図８に
示すような従来のプラズマ処理装置では、図３（ａ）に
示すように一方（下側）の電極４を接地して接地電極と
して形成し、他方（上側）の電極３を電源１１と接続し
て高圧電極として形成しているので、電極３のみに放電
に必要な高周波電圧Ｖを印加する必要があり、このよう
な電源配置では基準電位点Ｇに対して各電極３、４にか
かる高周波電圧Ｖが対称でなく、電極３と電極４におい
て高周波的な電流の流れにアンバランスが生じて放射ノ
イズが大きくなる。Normally, when a high-frequency voltage is applied to the electrodes 3 and 4, the radiation noise radiated into the space depends on the amplitude of the applied high-frequency voltage. As the amplitude of the high-frequency voltage increases, the amount of radiation noise increases. growing. Therefore, in a conventional plasma processing apparatus as shown in FIG. 8, one (lower) electrode 4 is grounded to form a ground electrode, and the other (upper) electrode 3 is formed as shown in FIG. Since it is connected to the power supply 11 and formed as a high-voltage electrode, it is necessary to apply a high-frequency voltage V required for discharge only to the electrode 3. The high-frequency voltage V applied to the electrode 4 is not symmetrical, and the flow of high-frequency current in the electrodes 3 and 4 becomes unbalanced, so that radiation noise increases.
【００２４】これに対して、本発明は図３（ｂ）に示す
ように、電極３、４のそれぞれに基準電位点Ｇに対して
ほぼＶ／２の高周波電圧を逆位相で印加して電極３、４
の間にＶの高周波電圧を印加するようにしたものであ
り、このような電源配置にすることにより、基準電位点
Ｇに対して各電極３、４にかかる高周波電圧Ｖ／２がほ
ぼ対称となって、電極３と電極４において高周波的な電
流の流れにアンバランスがなくなり、放射ノイズを小さ
く（最小に）することができるものである。On the other hand, according to the present invention, as shown in FIG. 3 (b), a high-frequency voltage of approximately V / 2 is applied to each of the electrodes 3 and 4 with respect to the reference potential point G in an opposite phase to each other. 3, 4
The high-frequency voltage V is applied between the electrodes 3 and 4 with respect to the reference potential point G by this power supply arrangement. As a result, there is no imbalance in the flow of the high-frequency current between the electrodes 3 and 4, and the radiation noise can be reduced (minimized).
【００２５】本発明において逆位相印加手段５のトラン
スとしては、図４に示すような同軸空芯トランスを用い
るのが好ましい。同軸空芯トランスは銅などの低抵抗の
導電性材料で形成される線材をコイル状に巻いて一次巻
線６と二次巻線７を形成し、この一次巻線６と二次巻線
７を適当なギャップを介して同軸状に配置することによ
って形成するものである。この際、一次巻線６と二次巻
線７のいずれを内側に配置しても良い（図４のものでは
一次巻線６を二次巻線７の内側に配置して形成されてい
る）。また、一次巻線６と二次巻線７の間にはガラスパ
イプ等で形成される絶縁性筒体２２を設けることがで
き、このことで一次巻線６と二次巻線７の保形性を高め
ることができると共に一次巻線６と二次巻線７の絶縁性
を高めることができる。さらに、一次巻線６と二次巻線
７の線材を中空（パイプ状）に形成しても良く、このこ
とで一次巻線６と二次巻線７に水などの冷媒を通して冷
却することができるものである。In the present invention, it is preferable to use a coaxial air-core transformer as shown in FIG. The coaxial air-core transformer forms a primary winding 6 and a secondary winding 7 by winding a wire made of a low-resistance conductive material such as copper into a coil shape, and forms the primary winding 6 and the secondary winding 7. Are arranged coaxially through an appropriate gap. At this time, either the primary winding 6 or the secondary winding 7 may be arranged inside (in FIG. 4, the primary winding 6 is formed inside the secondary winding 7). . Further, an insulating cylindrical body 22 formed of a glass pipe or the like can be provided between the primary winding 6 and the secondary winding 7, thereby maintaining the shape of the primary winding 6 and the secondary winding 7. And the insulation between the primary winding 6 and the secondary winding 7 can be improved. Further, the wires of the primary winding 6 and the secondary winding 7 may be formed in a hollow (pipe) shape, so that the primary winding 6 and the secondary winding 7 can be cooled by passing a coolant such as water. You can do it.
【００２６】本発明で用いる逆位相印加手段５として同
軸空芯トランスを用いる理由は次の通りである。低周波
の領域で用いるトランスは鉄芯などを利用して結合度を
非常に高くすることが可能である。しかし、本発明のよ
うに高周波（例えば、１３．５６ＭＨｚ）の領域で使用
するトランスに鉄芯を用いると、鉄芯でのロスが非常に
大きくなり、非常に結合度が低くなってしまう。そこ
で、鉄芯等を用いない空芯形状の一次巻線６と二次巻線
７を組み合わせて空芯トランスを形成すると共に、一次
巻線６と二次巻線７の結合度を高めるために一次巻線６
と二次巻線７を同軸状に配置するものであり、このこと
で、一次巻線６で発生した磁束を効率よく二次巻線７に
伝えることが可能となって、結合度の高いトランスを形
成することができるものである。The reason why a coaxial air-core transformer is used as the antiphase applying means 5 used in the present invention is as follows. The transformer used in the low-frequency region can have a very high degree of coupling by using an iron core or the like. However, when an iron core is used in a transformer used in a high-frequency (for example, 13.56 MHz) region as in the present invention, the loss in the iron core becomes extremely large, and the coupling degree becomes extremely low. Therefore, in order to form an air-core transformer by combining the air-core primary winding 6 and the secondary winding 7 that do not use an iron core or the like, and to increase the degree of coupling between the primary winding 6 and the secondary winding 7, Primary winding 6
And the secondary winding 7 are arranged coaxially, whereby the magnetic flux generated in the primary winding 6 can be efficiently transmitted to the secondary winding 7, and the transformer having a high degree of coupling is provided. Can be formed.
【００２７】また、本発明において逆位相印加手段５の
トランスとしては、図５（ａ）（ｂ）に示すような平面
トランスを用いることができる。この平面トランスは、
アルミナ等の誘電体材料で板状の絶縁体８を形成し、絶
縁体８の片面に一次巻線６としてこの片面に沿った渦巻
き状の電流路９を形成すると共に絶縁体８の他の片面に
二次巻線７としてこの片面に沿った渦巻き状の電流路１
０を形成したものである。一次巻線６と二次巻線７はほ
ぼ同形状に形成することができるが、二次巻線７の途中
には中間タップ２０が設けられている。また、電流路
９、１０は銅などの低抵抗の導電性材料で形成すること
ができる。In the present invention, as the transformer of the antiphase applying means 5, a plane transformer as shown in FIGS. 5A and 5B can be used. This planar transformer is
A plate-shaped insulator 8 is formed of a dielectric material such as alumina, and a spiral current path 9 is formed on one surface of the insulator 8 as a primary winding 6 on one surface of the insulator 8 and another surface of the insulator 8 is formed. And a spiral current path 1 along one side as a secondary winding 7.
0 is formed. The primary winding 6 and the secondary winding 7 can be formed in substantially the same shape, but an intermediate tap 20 is provided in the middle of the secondary winding 7. The current paths 9 and 10 can be formed of a low-resistance conductive material such as copper.
【００２８】このような平面トランスは、一次巻線６の
電流路９に高周波電流を通電すると、絶縁体８の面方向
に対して直角方向（絶縁体８の厚み方向）の磁束が発生
することになり、この磁束が二次巻線７の電流路１０に
吸収されて二次巻線７の電流路１０に高周波電流が発生
することになり、小型でありながら結合度の高いトラン
スにすることができるものである。In such a planar transformer, when a high-frequency current is applied to the current path 9 of the primary winding 6, a magnetic flux in a direction perpendicular to the surface direction of the insulator 8 (the thickness direction of the insulator 8) is generated. This magnetic flux is absorbed by the current path 10 of the secondary winding 7 and a high-frequency current is generated in the current path 10 of the secondary winding 7. Can be done.
【００２９】図６に他の実施の形態を示す。このプラズ
マ処理装置は反応容器２を円管状に、電極３、４を円環
状（ドーナツ状）にそれぞれ形成したものである。その
他の構成は上記の実施の形態と同様である。図７（ａ）
（ｂ）に他の実施の形態を示す。図７（ａ）のものは、
電極３、４を、反応容器２の外周面に接触して設けられ
た外側電極４１と反応容器２の内側に配置された内側電
極４０とで構成したものである。このまた、図７（ｂ）
のものは電極３、４が反応容器２を挟んで対向するよう
に、反応容器２の外周面に電極３、４を設けたものであ
る。その他の構成は図１に示すものと同様に形成されて
いる。このように本発明は反応容器２の形状、電極３、
４の形状や配置等を任意に形成することができる。FIG. 6 shows another embodiment. In this plasma processing apparatus, the reaction vessel 2 is formed in a tubular shape, and the electrodes 3, 4 are formed in an annular shape (donut shape). Other configurations are the same as in the above embodiment. FIG. 7 (a)
(B) shows another embodiment. The one in FIG.
The electrodes 3 and 4 are composed of an outer electrode 41 provided in contact with the outer peripheral surface of the reaction vessel 2 and an inner electrode 40 arranged inside the reaction vessel 2. FIG. 7 (b)
The electrode 3 and 4 are provided on the outer peripheral surface of the reaction vessel 2 so that the electrodes 3 and 4 face each other across the reaction vessel 2. Other components are formed in the same manner as shown in FIG. As described above, the present invention provides the shape of the reaction vessel 2, the electrode 3,
4 can be arbitrarily formed and arranged.
【００３０】[0030]
【実施例】以下本発明を実施例によって具体的に説明す
る。The present invention will be described below in detail with reference to examples.
【００３１】（実施例１）図１に示すプラズマ処理装置
を用いた。このプラズマ処理装置の反応容器２は内側寸
法が５５ｍｍ×１ｍｍで石英で形成されている。反応容
器２の外部には対をなす電極３、４を吹き出し口１に対
して上下に配置しており、電極３、４は逆位相印加手段
５とインピーダンス整合器１２を介して電源１１と電気
的に接続されている。高周波を発生する電源１１として
は１３．５６ＭＨｚの周波数の電圧を発振するものを用
いた。Example 1 The plasma processing apparatus shown in FIG. 1 was used. The reaction vessel 2 of this plasma processing apparatus has an inner dimension of 55 mm × 1 mm and is formed of quartz. Electrodes 3 and 4 forming a pair are arranged above and below the outlet 1 outside the reaction vessel 2, and the electrodes 3 and 4 are electrically connected to a power supply 11 via an antiphase application means 5 and an impedance matching device 12. Connected. As the power supply 11 for generating a high frequency, a power supply oscillating a voltage having a frequency of 13.56 MHz was used.
【００３２】逆位相印加手段５としては図４に示す同軸
空芯トランスを用いた。この同軸空芯トランスは外側の
コイルを二次巻線７、内側のコイルを一次巻線６として
形成されるものである。一次巻線６と二次巻線７は銅製
で、直径が５ｍｍの中空のパイプを用いて形成し、一次
巻線６と二次巻線７に水を通して冷却した。また、一次
巻線６と二次巻線７の間（間隔は２ｍｍ）には絶縁性を
高めるために、外径６０ｍｍのガラスパイプ（絶縁性筒
体２２）を配置した。また、一次巻線６の巻数は６ター
ン、二次巻線７の巻数は８ターンとし、二次巻線７のほ
ぼ中央部に中間タップ２０を設けて中間タップ２０を接
地した。As the antiphase applying means 5, a coaxial air core transformer shown in FIG. 4 was used. In this coaxial air core transformer, an outer coil is formed as a secondary winding 7 and an inner coil is formed as a primary winding 6. The primary winding 6 and the secondary winding 7 were made of copper, formed using a hollow pipe having a diameter of 5 mm, and cooled by passing water through the primary winding 6 and the secondary winding 7. Further, a glass pipe (insulating cylinder 22) having an outer diameter of 60 mm was disposed between the primary winding 6 and the secondary winding 7 (at an interval of 2 mm) in order to enhance insulation. The number of turns of the primary winding 6 was 6 turns, and the number of turns of the secondary winding 7 was 8 turns. An intermediate tap 20 was provided substantially at the center of the secondary winding 7 and the intermediate tap 20 was grounded.
【００３３】そして、大気圧下で、反応容器２にヘリウ
ムを２リットル／分、アルゴンを１０リットル／分、酸
素を０．４リットル／分で導入し、電源１１を用いて対
をなす電極３、４に振幅が同一で逆位相の高周波電圧を
印加し、７００Ｗの高周波電力にてプラズマ発生部１３
でプラズマを生成し、このプラズマをジェット状に吹き
出し口１から吹き出した。Then, under atmospheric pressure, helium is introduced into the reaction vessel 2 at a rate of 2 L / min, argon is introduced at a rate of 10 L / min, and oxygen is introduced at a rate of 0.4 L / min. , 4 are applied with high frequency voltages having the same amplitude and opposite phases, and the plasma generating unit 13 is supplied with a high frequency power of 700 W.
To generate a plasma, and the plasma was blown out from the blowout port 1 in a jet shape.
【００３４】このプラズマ処理装置では逆位相印加手段
５を用いない従来例（図８のもの）に比べて、電極３、
４やプラズマ発生部１３からの放射ノイズが約半分とな
った。In this plasma processing apparatus, as compared with the conventional example (FIG. 8) not using the antiphase applying means 5,
4 and the radiation noise from the plasma generation unit 13 were reduced to about half.
【００３５】（実施例２）図６に示すプラズマ処理装置
を用いた。このプラズマ処理装置の反応容器２は外径が
５ｍｍ、内径が３ｍｍで石英で形成されている。反応容
器２の外部には電極３、４を吹き出し口１に対して上下
に配置しており、電極３、４は逆位相印加手段５とイン
ピーダンス整合器１２を介して電源１１と電気的に接続
されている。高周波を発生する電源１１としては１３．
５６ＭＨｚの周波数の電圧を発振するものを用いた。Example 2 The plasma processing apparatus shown in FIG. 6 was used. The reaction vessel 2 of this plasma processing apparatus has an outer diameter of 5 mm and an inner diameter of 3 mm and is made of quartz. Electrodes 3 and 4 are arranged above and below the outlet 1 outside the reaction vessel 2, and the electrodes 3 and 4 are electrically connected to a power supply 11 via an anti-phase applying means 5 and an impedance matching device 12. Have been. 13. As the power supply 11 for generating high frequency,
A device that oscillates a voltage having a frequency of 56 MHz was used.
【００３６】逆位相印加手段５としては図５に示す平面
トランスを用いた。この平面トランスは一次巻線６の電
流路９と二次巻線７の電流路１０が銅製で、幅５ｍｍ、
長さ８００ｍｍ、直径１００ｍｍの渦巻き状に形成し、
絶縁体８をアルミナで厚み１ｍｍの板状にそれぞれ形成
した。また、二次巻線７のほぼ中央部に中間タップ２０
を設けて中間タップ２０を接地した。As the anti-phase applying means 5, a plane transformer shown in FIG. 5 was used. In this planar transformer, the current path 9 of the primary winding 6 and the current path 10 of the secondary winding 7 are made of copper and have a width of 5 mm.
Formed in a spiral shape with a length of 800 mm and a diameter of 100 mm,
The insulator 8 was formed in a plate shape with a thickness of 1 mm from alumina. In addition, an intermediate tap 20 is provided substantially at the center of the secondary winding 7.
And the intermediate tap 20 was grounded.
【００３７】そして、大気圧下で、反応容器２にヘリウ
ムを０．３リットル／分、アルゴンを１．５リットル／
分、酸素を０．０２リットル／分で導入し、電源１１を
用いて対をなす電極３、４に振幅が同一で逆位相の高周
波電圧を印加し、１００Ｗの高周波電力にてプラズマ発
生部１３でプラズマを生成し、このプラズマをジェット
状に吹き出し口１から吹き出した。Then, under atmospheric pressure, 0.3 liter / min of helium and 1.5 liter / min of argon were placed in the reaction vessel 2.
And oxygen at a rate of 0.02 liter / minute, and a high-frequency voltage having the same amplitude and opposite phase is applied to the paired electrodes 3 and 4 using the power supply 11, and the plasma generator 13 is supplied with a high-frequency power of 100 W. To generate a plasma, and the plasma was blown out from the blowout port 1 in a jet shape.
【００３８】このプラズマ処理装置では逆位相印加手段
５を用いない従来例（図８のもの）に比べて、電極３、
４やプラズマ発生部１３からの放射ノイズが約半分とな
った。In this plasma processing apparatus, compared to the conventional example (FIG. 8) in which the antiphase applying means 5 is not used,
4 and the radiation noise from the plasma generation unit 13 were reduced to about half.
【００３９】[0039]
【発明の効果】上記のように本発明の請求項１の発明
は、大気圧近傍の圧力下で、片側を吹き出し口として開
放させた反応容器内に高周波電圧を印加することにより
プラズマを生成し、生成したプラズマを反応容器の吹き
出し口よりジェット状に吹き出すプラズマ処理装置にお
いて、反応容器内に高周波電圧を印加するための対をな
す電極と、対をなす電極に逆位相の高周波電圧を印加す
るための逆位相印加手段とを備えるので、基準電位点よ
り計測した各電極に印加される高周波電圧の値は、対を
なす電極の間の高周波電圧の値よりも低くすることがで
き、電極からの放射ノイズを小さくすることができるも
のである。しかも、シールドケースを用いる必要がな
く、放射ノイズを小さくすることができるものであり、
装置の大型化する必要がないものである。As described above, according to the first aspect of the present invention, a plasma is generated by applying a high-frequency voltage to a reaction vessel which is opened at one side as an outlet under a pressure close to the atmospheric pressure. In a plasma processing apparatus that blows out generated plasma in a jet form from an outlet of a reaction vessel, a pair of electrodes for applying a high-frequency voltage to the inside of the reaction vessel and a high-frequency voltage of opposite phase are applied to the pair of electrodes. And a high-frequency voltage applied to each electrode measured from the reference potential point can be lower than a high-frequency voltage between the paired electrodes. Radiation noise can be reduced. In addition, there is no need to use a shield case, and the radiation noise can be reduced.
It is not necessary to increase the size of the device.
【００４０】また、本発明の請求項２の発明は、前記対
をなす電極に印加する逆位相の高周波電圧が、各位相で
振幅が同一であるので、基準電位点より計測した各電極
に印加される高周波電圧の値が最小となり、電極からの
放射ノイズを最小にすることができるものである。According to a second aspect of the present invention, since the high-frequency voltages of opposite phases applied to the paired electrodes have the same amplitude in each phase, the high-frequency voltages applied to the electrodes measured from the reference potential point are applied. The value of the high-frequency voltage to be applied is minimized, and the noise radiated from the electrodes can be minimized.
【００４１】また、本発明の請求項３の発明は、前記逆
位相印加手段が、一次巻線と二次巻線を有すると共に二
次巻線の経路間で接地されたトランスで形成されるの
で、簡単な構成で逆位相印加手段を形成することがで
き、対をなす電極に逆位相の高周波電圧を印加すること
ができると共に対をなす電極に印加する逆位相の高周波
電圧が各位相で振幅を同一にすることができるものであ
る。According to a third aspect of the present invention, the anti-phase applying means is formed by a transformer having a primary winding and a secondary winding and grounded between the secondary winding paths. It is possible to form an anti-phase applying means with a simple configuration, apply an anti-phase high-frequency voltage to a pair of electrodes, and an anti-phase high-frequency voltage applied to a pair of electrodes has an amplitude in each phase. Can be made the same.
【００４２】また、本発明の請求項４の発明は、前記ト
ランスが同軸空芯トランスであるので、結合ロスの少な
いトランスで逆位相印加手段を形成することができるも
のである。According to the invention of claim 4 of the present invention, since the transformer is a coaxial air core transformer, the anti-phase applying means can be formed by a transformer having a small coupling loss.
【００４３】また、本発明の請求項５の発明は、前記ト
ランスが、板状の絶縁体の片面に一次巻線として渦巻き
状の電流路を形成すると共に板状の絶縁体の他の片面に
二次巻線として渦巻き状の電流路を形成したトランスで
あるので、結合ロスが少なく、薄くて寸法の小さいトラ
ンスで逆位相印加手段を形成することができるものであ
る。According to a fifth aspect of the present invention, the transformer forms a spiral current path as a primary winding on one surface of the plate-shaped insulator and forms the spiral current path on the other surface of the plate-shaped insulator. Since the transformer has a spiral current path as the secondary winding, the anti-phase applying means can be formed by a thin and small-sized transformer having a small coupling loss.
【００４４】また、本発明の請求項６の発明は、請求項
１乃至５のいずれかに記載のプラズマ処理装置の吹き出
し口の下方に被処理物を配置し、吹き出し口より吹き出
すプラズマを被処理物に供給するので、放射ノイズを少
なくしながらプラズマ処理を行うことができるものであ
る。According to a sixth aspect of the present invention, there is provided a plasma processing apparatus according to any one of the first to fifth aspects, wherein an object to be processed is arranged below the outlet, and the plasma blown from the outlet is processed. Since it is supplied to an object, plasma processing can be performed while reducing radiation noise.
【図１】本発明の実施の形態の一例を示す概略図であ
る。FIG. 1 is a schematic diagram showing an example of an embodiment of the present invention.
【図２】同上の底面図である。FIG. 2 is a bottom view of the above.
【図３】（ａ）は本発明において、電極に印加される高
周波電圧の位相を示す説明図、（ｂ）は従来例におい
て、電極に印加される高周波電圧の位相を示す説明図で
ある。FIG. 3A is an explanatory diagram showing the phase of a high-frequency voltage applied to an electrode in the present invention, and FIG. 3B is an explanatory diagram showing the phase of a high-frequency voltage applied to an electrode in a conventional example.
【図４】同上の同軸空芯トランスを示す斜視図である。FIG. 4 is a perspective view showing the coaxial air-core transformer according to the first embodiment.
【図５】同上の平面トランスを示し、（ａ）は正面図、
（ｂ）は斜視図である。5A and 5B show a planar transformer of the above, and FIG.
(B) is a perspective view.
【図６】同上の他の実施の形態の一例を示す概略図であ
る。FIG. 6 is a schematic diagram showing an example of another embodiment of the above.
【図７】（ａ）（ｂ）は同上の他の実施の形態の一例を
示す断面図である。FIGS. 7A and 7B are cross-sectional views showing an example of another embodiment of the above.
【図８】従来例を示す概略図である。FIG. 8 is a schematic diagram showing a conventional example.
１ 吹き出し口 ２ 反応容器 ３ 電極 ４ 電極 ５ 逆位相印加手段 ６ 一次巻線 ７ 二次巻線 ８ 絶縁体 ９ 電流路 １０ 電流路 ２１ 被処理物 Ｐ プラズマ REFERENCE SIGNS LIST 1 outlet 2 reaction vessel 3 electrode 4 electrode 5 antiphase application means 6 primary winding 7 secondary winding 8 insulator 9 current path 10 current path 21 workpiece P plasma
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4G075 AA22 AA24 BC10 BD03 BD14 BD24 CA25 CA47 DA02 EA01 EB43 EC01 EC06 EC21 4K057 DA01 DA20 DE08 DE14 DE15 DE20 DM01 DM06 DM09 DM20 DM37 DM40 DN01 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4G075 AA22 AA24 BC10 BD03 BD14 BD24 CA25 CA47 DA02 EA01 EB43 EC01 EC06 EC21 4K057 DA01 DA20 DE08 DE14 DE15 DE20 DM01 DM06 DM09 DM20 DM37 DM40 DN01
Claims (6)
口として開放させた反応容器内に高周波電圧を印加する
ことによりプラズマを生成し、生成したプラズマを反応
容器の吹き出し口よりジェット状に吹き出すプラズマ処
理装置において、反応容器内に高周波電圧を印加するた
めの対をなす電極と、対をなす電極に逆位相の高周波電
圧を印加するための逆位相印加手段とを備えて成ること
を特徴とするプラズマ処理装置。1. A plasma is generated by applying a high-frequency voltage to a reaction vessel opened at one side as an outlet under a pressure near the atmospheric pressure, and the generated plasma is jetted from the outlet of the reaction vessel. A plasma processing apparatus that blows out, comprising: a pair of electrodes for applying a high-frequency voltage into a reaction vessel; and an opposite-phase applying means for applying an opposite-phase high-frequency voltage to the paired electrodes. Plasma processing apparatus.
周波電圧が、各位相で振幅が同一であることを特徴とす
る請求項１に記載のプラズマ処理装置。2. The plasma processing apparatus according to claim 1, wherein the opposite-phase high-frequency voltages applied to the paired electrodes have the same amplitude in each phase.
巻線を有すると共に二次巻線の経路間で接地されたトラ
ンスで形成されて成ることを特徴とする請求項１又は２
に記載のプラズマ処理装置。3. The device according to claim 1, wherein said anti-phase applying means is formed by a transformer having a primary winding and a secondary winding and grounded between paths of the secondary winding.
3. The plasma processing apparatus according to 1.
ことを特徴とする請求項３に記載のプラズマ処理装置。4. The plasma processing apparatus according to claim 3, wherein said transformer is a coaxial air core transformer.
一次巻線として渦巻き状の電流路を形成すると共に板状
の絶縁体の他の片面に二次巻線として渦巻き状の電流路
を形成したトランスであることを特徴とする請求項３に
記載のプラズマ処理装置。5. A spiral current path as a primary winding on one side of a plate-shaped insulator as a primary winding, and a spiral current path as a secondary winding on another side of a plate-shaped insulator. The plasma processing apparatus according to claim 3, wherein the transformer is formed with:
ズマ処理装置の吹き出し口の下方に被処理物を配置し、
吹き出し口より吹き出すプラズマを被処理物に供給する
ことを特徴とするプラズマ処理方法。6. An object to be processed is arranged below an outlet of the plasma processing apparatus according to any one of claims 1 to 5,
A plasma processing method, characterized in that plasma to be discharged from an outlet is supplied to an object to be processed.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006302624A (en) * | 2005-04-19 | 2006-11-02 | Matsushita Electric Works Ltd | Plasma treatment device and method |
| JP2006302625A (en) * | 2005-04-19 | 2006-11-02 | Matsushita Electric Works Ltd | Plasma treatment device and method |
| JP2007026781A (en) * | 2005-07-13 | 2007-02-01 | Sharp Corp | Plasma treatment device |
| JP2009301730A (en) * | 2008-06-10 | 2009-12-24 | Panasonic Corp | Method and device for generating atmospheric pressure plasma |
| JP2010234255A (en) * | 2009-03-31 | 2010-10-21 | Yamatake Corp | Gas treatment apparatus |
| JP2010234256A (en) * | 2009-03-31 | 2010-10-21 | Yamatake Corp | Gas treatment apparatus |
| JP2013097963A (en) * | 2011-10-31 | 2013-05-20 | Panasonic Corp | Plasma generator |
| JP2017208225A (en) * | 2016-05-18 | 2017-11-24 | 東京エレクトロン株式会社 | Plasma processing device |
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| CN110392478B (en) * | 2019-06-28 | 2021-10-15 | 西安交通大学 | Anti-phase double-high-pressure three-ring structure safety jet device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006302624A (en) * | 2005-04-19 | 2006-11-02 | Matsushita Electric Works Ltd | Plasma treatment device and method |
| JP2006302625A (en) * | 2005-04-19 | 2006-11-02 | Matsushita Electric Works Ltd | Plasma treatment device and method |
| JP2007026781A (en) * | 2005-07-13 | 2007-02-01 | Sharp Corp | Plasma treatment device |
| JP2009301730A (en) * | 2008-06-10 | 2009-12-24 | Panasonic Corp | Method and device for generating atmospheric pressure plasma |
| JP2010234255A (en) * | 2009-03-31 | 2010-10-21 | Yamatake Corp | Gas treatment apparatus |
| JP2010234256A (en) * | 2009-03-31 | 2010-10-21 | Yamatake Corp | Gas treatment apparatus |
| JP2013097963A (en) * | 2011-10-31 | 2013-05-20 | Panasonic Corp | Plasma generator |
| JP2017208225A (en) * | 2016-05-18 | 2017-11-24 | 東京エレクトロン株式会社 | Plasma processing device |
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| Publication number | Publication date |
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| JP3951557B2 (en) | 2007-08-01 |
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