JP2001332523A - Substrate treating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress a drop in the yield of a device by suppressing the occurrence of bubbles in running water and improving the treatment efficiency of the cleaning, etc., of a substrate. SOLUTION: This substrate treating device is provided with a treating tank 10 in which treatment, such as cleaning, etc., is performed on a wafer W while the wafer W is dipped in a treating liquid LQ; an outer tank 14 which is arranged beside and under the tank 10, has a hermetically sealed structure, and contains the running water WT, and an ultrasonic vibrating body 16 which gives an ultrasonic wave to the treating liquid LQ contained in the tank 10 through the running water WT contained in the outer tank 14.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate for immersing a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal, a glass substrate for a plasma display or the like in a processing bath and subjecting the substrate to a predetermined process such as a cleaning process or an etching process. It relates to a processing device.

[0002]

2. Description of the Related Art As a conventional substrate processing apparatus of this type, FIG.
The following are known. This substrate processing apparatus is a cleaning apparatus that performs a cleaning process or the like on a wafer W using a processing liquid.

The substrate processing apparatus 100 includes a processing tank 110 in which a processing liquid LQ such as hydrofluoric acid (HF) and sulfuric acid / hydrogen peroxide (H ₂ SO ₄ / H ₂ O ₂ ) is stored. An outer tank 120 in which water WT is stored and a lower part of the processing tank 110 is immersed in the propagation water; an ultrasonic vibrator 130 disposed on an inner bottom of the outer tank 120; An oscillation control unit 140 that drives the body 130.

[0006] As shown in FIG. 6, the processing tank 110 is configured so that a disk-shaped wafer supported by a support mechanism 111 can be stored in a state of being immersed in a processing liquid LQ. A predetermined process such as a process is performed. The support mechanism 111 includes a plurality of three rod-shaped support members 112.
Are provided upright, and the end of the wafer W is supported by a plurality of support grooves (not shown) formed in the support member 112. The processing tank 110 is provided with a supply pipe for supplying the processing liquid LQ, a waste liquid pipe for discharging the used processing liquid, and the like, but these are omitted in FIG.

[0005] The outer tank 120 stores the propagation water as described above, and the ultrasonic vibrator 1 attached to the inner bottom portion.
The cooling unit 30 is disposed for the purpose of cooling to prevent breakage due to generated heat at the time of driving, or preventing the processing liquid LQ in the processing tank 110 from scattering and adhering to the ultrasonic vibrator 130. Things. In addition, a feed pipe for supplying the propagation water WT, a waste liquid pipe for discharging the propagation water WT, and the like are provided in the outer tank 120 as necessary, but are omitted in FIG. 6.

[0006]

However, in the above-described conventional substrate processing apparatus, when bubbles are generated in the propagation water WT, the bubbles accumulate in the lower portion of the outer tank 110, thereby causing the ultrasonic wave from the ultrasonic vibrator 130. There is also a problem that the ultrasonic energy is consumed, the acoustic energy transmitted to the processing tank 110 is reduced, the particle removal rate of the wafer W is reduced, and the device yield is reduced.

[0007] In order to improve the situation of such a problem, it is conceivable to use deaerated water as the transmission water.
Since the upper part of the outer tub 120 containing the propagation water is open, air dissolves in the propagation water and bubbles are generated in the propagation water, and as a result, the reduction in the device yield is suppressed. I couldn't do that.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has been made in consideration of the above circumstances, and has been made in view of the above circumstances, and has been made in view of the above circumstances. It is intended to provide a device.

[0009]

According to a first aspect of the present invention, there is provided a substrate processing apparatus, comprising: a first processing tank for performing a predetermined processing on a substrate while the substrate is immersed in a processing liquid; A first supply port for supplying propagation water and a first discharge port for discharging propagation water, which are disposed on the side and bottom of the first treatment tank, and have a closed structure and transmit propagation water. A first outer tank to be housed, first ultrasonic vibration applying means for applying ultrasonic waves to the processing liquid in the first processing tank through propagation water in the first outer tank, and a state in which the substrate is immersed in the processing liquid A second processing tank for performing predetermined processing on the substrate, a second supply port for supplying propagation water, and a second discharge port for discharging propagation water, the second supply port being provided at a side portion and a lower portion of the second processing tank. A second outer tank having an outlet, having a sealed structure and containing propagation water; A second ultrasonic vibration applying means for applying ultrasonic waves to the treatment liquid of the second treatment tank through the water, a communicating pipe for communicating the first outlet and the second inlet,
It is characterized by having.

[0010] In the first aspect, the first processing tank,
Although two processing tanks are described as the second processing tank, the invention described in claim 1 also assumes that there are three or more processing tanks.

Further, the substrate processing apparatus according to claim 2 is
2. The substrate processing apparatus according to claim 1, wherein, when processing the substrate in the first processing tank, the transmitting water is supplied from the first supply port to the first outer tank, and the transmitting water is supplied to the first outer tank. 3.
It is characterized by being discharged from a first discharge port of an outer tank.

Further, the substrate processing apparatus according to claim 3 is
The substrate processing apparatus according to claim 1, wherein, when processing the substrate in the second processing tank, while transmitting the propagation water from the second supply port to the second outer tank,
The transmission water is discharged from a second discharge port of the second outer tank.

Further, the substrate processing apparatus according to claim 4 is
The substrate processing apparatus according to any one of claims 1 to 3, further comprising cooling means for cooling the propagation water.

Further, the substrate processing apparatus according to the present invention is characterized in that:
5. The substrate processing apparatus according to claim 4, wherein the cooling means includes a communication pipe cooling means provided in the middle of the communication pipe.

Further, the substrate processing apparatus according to claim 6 is
5. The substrate processing apparatus according to claim 4, wherein the cooling unit includes a first outer tank cooling unit disposed outside the first outer tank, and a second outer cooling unit disposed outside the second outer tank. 6. A cooling means for the tank.

Further, the substrate processing apparatus according to claim 7 is
7. The substrate processing apparatus according to claim 1, wherein a supply amount adjusting unit that adjusts a supply amount of the propagation water supplied from the first supply port, the first ultrasonic vibration applying unit, and And control means for controlling the supply amount adjusting means to adjust the supply amount of the propagation water based on the operation of the second ultrasonic vibration applying means.

Further, the substrate processing apparatus according to claim 8 is
A treatment tank for performing a predetermined treatment on the substrate in a state where the substrate is immersed in the treatment liquid, a supply port for supplying propagation water, and a discharge port for discharging propagation water, which are disposed on the side and bottom of the treatment tank; An outer tank having an outlet, having a sealed structure and containing propagation water, and an ultrasonic vibration applying means for applying ultrasonic waves to the treatment liquid in the processing tank through the propagation water in the outer tank. It is characterized by the following.

Further, the substrate processing apparatus according to claim 9 is
9. The substrate processing apparatus according to claim 8, wherein, when processing the substrate in the processing tank, the transmitting water is supplied to the outer tank from the supply port, and the transmitting water is discharged from an outlet of the outer tank. It is a feature.

According to a tenth aspect of the present invention, there is provided the substrate processing apparatus according to the eighth or ninth aspect, further comprising cooling means for cooling the propagation water. .

According to a eleventh aspect of the present invention, in the substrate processing apparatus of the tenth aspect, the cooling means has an outer tank cooling means disposed outside the outer tank. It is a feature.

According to a twelfth aspect of the present invention, there is provided the substrate processing apparatus according to any one of the eighth to eleventh aspects, wherein the supply amount of the propagation water supplied from the supply port is adjusted. It is characterized by further comprising an amount adjusting means and a control means for controlling the supply amount adjusting means to adjust the supply amount of the propagation water based on the operation of the ultrasonic vibration applying means. .

[0022]

Embodiments of a substrate processing apparatus according to the present invention will be described below with reference to the drawings.
FIG. 1 is a schematic configuration diagram of a substrate processing apparatus according to the present invention, and FIG. 2 is a cross-sectional view of a first processing unit provided in the substrate processing apparatus.

This substrate processing apparatus, as shown in FIG.
The first processing unit 10, the second processing unit 30, and the third processing unit 50
It is provided in order in a line. The first processing unit 10 includes a processing tank 12 in which a processing liquid LQ such as hydrofluoric acid (HF) and sulfuric acid / hydrogen peroxide (H ₂ SO ₄ / H ₂ O ₂ ) is stored, and a propagation water WT therein.
Is stored, the lower part of the processing tank 12 is immersed in the propagation water WT, and the outer tank 14 is disposed at the side and lower part of the processing tank 12, and the super tank disposed at the inner bottom of the outer tank 14. The ultrasonic vibration body 16 is provided with an oscillation control unit 18 for driving the ultrasonic vibration body 16.

As shown in FIG. 2, the first processing section 10 immerses the disk-shaped wafer W supported by the substrate support mechanism 20 in the processing liquid LQ and places the wafer W in the processing tank 12.
The cleaning process is performed on the wafer W. The substrate support mechanism 20 is provided with three rod-shaped support members 21 having a plurality of support grooves formed on a peripheral surface thereof. W is held. Further, the substrate support mechanism 20 can be moved between the inside and the outside of the processing tank 12 by a moving mechanism (not shown) while supporting the plurality of wafers W. The processing tank 12 is provided with a feed pipe for supplying the processing liquid LQ to the processing tank 12, a waste liquid pipe for discharging used processing liquid, and the like, while keeping the processing liquid LQ at a predetermined temperature. A temperature adjusting mechanism for maintaining the temperature is provided as needed, but they are omitted in FIGS. 1 and 2.

The outer tank 14 stores the propagation water WT as described above. As shown in FIG. 2, the outer tank 14 has a sealed structure so that air does not enter the propagation water WT in the outer tank 14. A supply port 22a for supplying the propagation water WT into the outer tank 14 is formed on one side, and a discharge port 22b for discharging the propagation water WT from the inside of the outer tank 14 is formed on the other side. In addition, the supply port 22a is the first port of the present invention.
The discharge port 22b corresponds to a supply port, and the discharge port 22b corresponds to a first discharge port of the present invention.

When the ultrasonic vibrator 16 arranged at the inner bottom of the outer tub 14 vibrates under the control of the oscillation control unit 18 (see FIG. 1), the ultrasonic vibrator 16 is moved from the ultrasonic vibrator 16 to 0.7 to 5. The high-frequency sound wave of 0 MHz is emitted to the processing liquid LQ in the processing tank 12 through the propagation water WT in the outer tank 14. Wafer W immersed in processing liquid LQ in processing tank 12
Is subjected to a cleaning process using the processing liquid LQ from which high-frequency sound waves have been emitted, and the cleaning effect is enhanced.

At the lower side of the outer tub 14, cooling mechanisms 23a and 23b using a Peltier element or the like are provided. The cooling mechanisms 23a and 23b can cool the propagation water WT in the outer tank 14 whose temperature has been increased by the processing of the wafer W in the processing tank 12. The cooling mechanisms 23a and 23b correspond to the outer tank cooling means of the present invention.

The second processing section 30 has substantially the same structure as the above-described first processing section 10, and has a processing liquid LQ therein.
And an outer tank 34 disposed on the side and lower part of the processing tank 32 in a state in which the propagation water WT is stored therein and the lower part of the processing tank 32 is immersed in the propagation water WT.
And the ultrasonic vibrator 3 arranged at the inner bottom of the outer tank 34
6 and an oscillation controller 3 for driving the ultrasonic vibrator 36
8 is provided.

The processing tank 32 is a processing tank 1 of the first processing unit 10.
As in the case of 2, the cleaning process is performed on the wafer W. The processing tank 32 is provided with a feed pipe for supplying the processing liquid LQ to the processing tank 32, a waste liquid pipe for discharging the used processing liquid, and the like, while keeping the processing liquid LQ at a predetermined temperature. Although a temperature adjusting mechanism and the like for maintaining the temperature are provided as necessary, they are omitted in FIG.

The outer tank 34 stores the propagation water WT as described above, and has a closed structure in which air does not enter the propagation water WT in the outer tank 34.
A supply port 42a for supplying the propagation water WT to the inside is formed, and the propagation water W from the inside of the outer tank 14 is formed on the other side.
An outlet 42b for discharging T is formed. In addition, the supply port 44a is the first supply port of the present invention or the second supply port.
The outlet 44b corresponds to the first outlet or the second outlet of the present invention.

When the ultrasonic vibrator 36 disposed at the inner bottom of the outer tub 34 vibrates under the control of the oscillation controller 38, the ultrasonic vibrator 36 receives, for example, 0.7 to 5.0 from the ultrasonic vibrator 36.
High-frequency sound waves of MHz are radiated to the processing liquid LQ in the processing tank 32 through the propagation water WT in the outer tank 34. Processing tank 3
The wafer W immersed in the processing liquid LQ in 2 is subjected to a cleaning process using the processing liquid from which the high-frequency sound waves are emitted, and the cleaning effect is enhanced.

Note that cooling mechanisms 43a and 43b using a Peltier element or the like are provided below the side of the outer tub 34. The cooling mechanisms 43a and 43b can cool the propagation water WT in the outer tank 34 whose temperature has increased due to the processing of the wafer W in the processing tank 12. The cooling mechanisms 43a and 43b correspond to the outer tank cooling means of the present invention.

The third processing unit 50 has substantially the same structure as the first processing unit 10 and the second processing unit 30 described above, and includes a processing tank 52 in which a processing liquid LQ is stored, The propagation water WT is stored in the lower part of the treatment tank 52.
An outer tank 54 immersed in T and disposed at the side and lower part of the processing tank 52; an ultrasonic vibrator 56 disposed at the inner bottom of the outer tank 54; And an oscillation control unit 58 for driving the same.

The processing tank 52 is a processing tank 1 of the first processing unit 10.
The cleaning process is performed on the wafer W as in the processing tank 32 of the second and second processing units 30. The processing tank 52 is provided with a supply pipe for supplying the processing liquid LQ to the processing tank 52, a waste liquid pipe for discharging used processing liquid, and the like, while keeping the processing liquid LQ at a predetermined temperature. Although a temperature adjusting mechanism and the like for maintaining the temperature are provided as necessary, they are omitted in FIG.

The outer tank 54 stores the propagation water WT as described above, and has a closed structure so that air does not enter the propagation water WT in the outer tank 54.
A supply port 62a for supplying the propagation water WT to the inside is formed, and a discharge port 62b for discharging the propagation water WT from the inside of the outer tank 54 is formed on the other side. In addition,
The supply port 62a corresponds to a second supply port of the present invention, and the discharge port 62b corresponds to a second discharge port of the present invention.

When the ultrasonic vibrator 56 arranged at the inner bottom of the outer tub 54 vibrates under the control of the oscillation control unit 58, the ultrasonic vibrator 56 receives, for example, 0.7 to 5.0.
High-frequency sound waves of MHz are emitted to the processing liquid in the processing tank 52 through the propagation water WT in the outer tank 54. The wafer W immersed in the processing liquid in the processing bath 52 is subjected to a cleaning process using the processing liquid from which the high-frequency sound waves have been emitted, and the cleaning effect is enhanced.

Note that cooling mechanisms 63a and 63b using a Peltier element or the like are provided below the side of the outer tub 54. The cooling mechanisms 63a and 63b can cool the propagation water WT in the outer tank 54 whose temperature has increased due to the processing of the wafer W in the processing tank 52. The cooling mechanisms 63a and 63b correspond to the outer tank cooling means of the present invention.

The outer tank 14 of the first processing section 10 is connected to a propagation water supply source 70 via a pipe 71. Propagated water WT of the transmitted water supply source 70 is supplied from the supply port 22 a into the outer tank 14 through the pipe 71. A supply amount regulating valve 72 is provided in the middle of the pipe 71, and by controlling the opening and closing of the supply amount regulating valve 72, the supply amount of the propagation water supplied from the propagation water supply source 70 to the outer tub 14 is adjusted. In addition, the supply amount adjusting valve 7
Reference numeral 2 corresponds to the supply amount adjusting means of the present invention.

The outer tank 34 of the second processing unit 30 is connected to the outer tank 14 of the first processing unit 10 via a communication pipe 75. The propagation water WT in the outer tub 14 is supplied from the outlet 22b of the outer tub 14 through the communication pipe 75 into the outer tub 34 through the supply port 42a. The cooling mechanism 7 is provided in the middle of the communication pipe 75.
6 are provided. The cooling mechanism 76 includes a communication pipe 75
As shown in FIG. 3, a spirally wound portion A of the communication pipe 75 is accommodated in a cylindrical member 760 as shown in FIG. Then, the cylindrical member 76
Above 0, a supply port 761a for supplying cooling water into the cylindrical member 760 and a discharge port 761b for discharging cooling water from the cylindrical member 760 are formed.

The outer tank 54 of the third processing unit 50 communicates with the outer tank 34 of the second processing unit 30 via a communication pipe 80. Propagation water WT in the outer tank 34 passes through a pipe 80 from a discharge port 42b of the outer tank 34, and from a supply port 62a to the outer tank 5
4. A cooling mechanism 81 is provided in the middle of the communication pipe 80.
Is provided. The cooling mechanism 81 cools the propagation water WT flowing through the communication pipe 80.
Is the same as the cooling mechanism 76 shown in FIG. The cooling mechanism 76 or the cooling mechanism 81 corresponds to a cooling means for a communication pipe of the present invention.

The outer tank 54 of the third processing section 50 is configured to discharge the propagation water WT to the outside of the substrate processing apparatus via a pipe 85. A discharge regulating valve 86 is provided in the middle of the pipe 85, and by controlling the opening and closing of the discharge regulating valve 86, the discharge of the propagation water WT discharged to the outside from the outer tank 54 is adjusted. Note that the discharge amount adjustment valve 86 opens and closes in conjunction with the supply amount adjustment valve 72.

FIG. 4 is a block diagram showing a control system of the substrate processing apparatus according to the present invention. The control unit 90 controls the supply amount adjustment valve 72 to control the supply amount of the propagation water WT supplied from the transmission water supply source 70 to the outer tub 14, and controls the discharge amount adjustment valve 86 to control the outer tubing. The discharge amount of the propagation water WT discharged from the outside to the outside is controlled. This discharge adjustment valve 86
The control unit 90 controls the interlock between the control valve 90 and the supply amount adjustment valve 72. The control unit 90 also controls the cooling mechanism 2 of the first processing unit 10.
3a, 23b, the cooling mechanisms 43a, 43b of the second processing unit 30, and the cooling mechanisms 63a, 63b of the third processing unit. Further, the control unit 90 includes the oscillation control units 18, 38, 5,
8 to control the operation in the “ON” state and the “OFF” state.

Next, the flow of the propagation water WT in the substrate processing apparatus according to the present invention will be described. First, the control unit 90
However, when the supply amount adjusting valve 72 and the discharge amount adjusting valve 86 are controlled to increase the degree of “open”, the outer tank of the first processing unit 10 is transmitted from the transmission water supply source 70 via the pipe 71 and the supply port 22a. The propagation water WT is supplied into the inside 14. As shown in FIG. 5, when the degree of “open” of the supply amount adjusting valve 72 increases (1.0 l / min or more), the oscillation control unit 18 is turned “ON” by the control of the control unit 90, The ultrasonic vibrator 16 starts to vibrate, and the high-frequency sound waves of the ultrasonic vibrator 16 are emitted to the processing liquid LQ in the processing tank 12 through the propagation water WT in the outer tank 14. As a result, the wafer W immersed in the processing liquid LQ in the processing bath 12 is subjected to a cleaning process using the processing liquid LQ from which the high-frequency sound waves are emitted.

The control unit 90 controls the cooling mechanism 23a,
When 23b is in the “ON” state, the temperature of the propagation water WT whose temperature has increased due to the processing of the wafer W in the processing tank 12 is lowered.

Next, the transmission water WT in the outer tank 14 is discharged from the outer tank 14 through the outlet 22b together with the bubbles contained in the transmission water WT.
2a, the propagation water W into the outer tank 54 of the second processing unit 30.
T is supplied. At this time, the propagation water flowing through the communication pipe 75 is cooled by the cooling mechanism 76, whereby the bubbles are redissolved in the propagation water WT, and the bubbles can be eliminated.

In the outer tank 34, under the control of the control unit 90, high-frequency sound waves of the ultrasonic vibrator 36 are emitted to the processing liquid in the processing tank 34 through the propagation water WT in the outer tank 34. The wafer W immersed in the processing liquid in the processing bath 34
The cleaning treatment is performed by the treatment liquid LQ from which the high-frequency sound waves have been emitted.

The propagating water WT in the outer tank 34 is discharged from the outer tank 34 through the outlet 42b together with the bubbles contained in the propagating water WT, and further discharged through the communication pipe 80 and the supply port 62a. The propagation water WT is supplied into the outer tank 54 of the third processing unit 50. At this time, the propagation water WT flowing through the pipe 80 is
The cooling is performed by the cooling mechanism 81, whereby the bubbles are redissolved in the propagation water WT, and the bubbles can be eliminated.

In the outer tank 54, under the control of the control unit 90, high-frequency sound waves of the ultrasonic vibrator 56 are emitted to the processing liquid LQ in the processing tank 52 through the propagation water WT in the outer tank 54. The wafer W immersed in the processing liquid LQ in the processing tank 54 is subjected to a cleaning process using the processing liquid from which the high-frequency sound waves are emitted.

When the discharge amount adjusting valve 86 is in the "open" state by the control unit 90, the transmission water WT in the outer tank 54 is discharged through the discharge port 62b and the pipe 85 together with the bubbles contained in the transmission water WT. The substrate is discharged to the outside of the substrate processing apparatus.

In this substrate processing apparatus, when cleaning the wafer W with the processing liquid LQ in each of the processing tanks 12, 34, and 54 using ultrasonic vibration, the supply amount adjusting valve 72 is set to “ Open ”(1.0 l /
min), when the cleaning is not performed, the degree of “open” of the supply amount adjusting valve 72 is reduced (0.1 l).
/ Min or less), and the transmitted water WT can be effectively used.

According to the embodiment of the substrate processing apparatus according to the present invention described above, the following effects can be obtained.

First, each of the outer tubs 14, 34, 54 is made to have a sealed structure, a supply port 22a and a discharge port 22b are formed in the outer tub 14, and a supply port 42a and a discharge port 42b are formed in the outer tub 34. A supply port 62a and a discharge port 62b are formed in the outer tank 54, and the propagation water WT flows to each of the outer tanks 14, 34, 54, so that the generation of bubbles in the propagation water WT is suppressed,
The processing efficiency such as cleaning of the wafer W in each of the processing tanks 12, 33, and 52 can be improved.

A communication pipe 75 is provided between the outer tank 14 and the outer tank 34, and a communication pipe 8 is provided between the outer tank 34 and the outer tank 54.
0, and the transmission water WT is supplied to the outer tank 14 through the communication pipe 75.
From the outer tub 34 to the outer tub 54 via the communication pipe 80, so that the same propagation water FT is used for the plurality of outer tubs 14, 34, 54. Therefore, there is an effect that the propagation water WT can be effectively used.

Further, cooling mechanisms 23a and 23b using a Peltier element or the like are provided below the side of the outer tub 14, and cooling mechanisms 43a and 43b using a Peltier element or the like are provided below the side of the outer tub 34. And cooling mechanisms 63a and 63b using a Peltier element or the like are provided below the side of the outer tank 54, so that the propagation increased by the cleaning processing of the wafer W in each of the processing tanks 12, 32 and 52. The temperature of the water WT can be efficiently reduced.

Further, since a cooling mechanism 76 is provided in the communication pipe 75 and a cooling mechanism 81 is provided in the communication pipe 80,
The temperature of the propagation water WT flowing through each communication pipe 75, 80 can also be efficiently reduced. If the temperature of the propagating water is efficiently lowered, the bubbles are re-dissolved in the propagating water WT, and the bubbles can be eliminated.

In this embodiment, pure water in which dissolved gas is controlled or degassed pure water is used as the propagating water. However, such pure water is more effective. In addition, the generation of bubbles in the propagation water WT can be suppressed, and the efficiency of cleaning the wafer W in the processing tanks 12, 33, and 52 can be improved.

In this embodiment, the processing tanks 12, 3
Although the description has been given of the cleaning processing of the wafer W in the sections 2 and 52, the substrate processing apparatus of the present invention can also be used for the etching processing of the wafer W.

[0058]

As described above in detail, according to the substrate processing apparatus of the present invention, the first outer tank and the second outer tank have a sealed structure, and the first outer tank has the first supply port and the first supply port. Forming one discharge port, forming a second supply port and a second discharge port in the second outer tank,
Since the propagation water flows, the inside of the first outer tank and the second
The generation of bubbles in the outer tank can be suppressed, and the processing efficiency such as the cleaning processing of the substrate can be improved. Further, since the transmitted water flows from the first outer tank to the second outer tank through the communication pipe, a plurality of the same transmitted water can be used, and the transmitted water can be effectively used.

Further, according to the substrate processing apparatus of the present invention, the outer tank has a sealed structure, and a supply port and a discharge port are formed in the outer tank so that the propagation water flows. The generation of bubbles in the inside can be suppressed, and the processing efficiency such as the cleaning processing of the substrate can be improved.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a substrate processing apparatus according to the present invention.

FIG. 2 is a sectional view of a first processing unit of the substrate processing apparatus according to the present invention.

FIG. 3 is a schematic configuration diagram of a cooling mechanism provided in a communication pipe.

FIG. 4 is a block diagram showing a control system of the substrate processing apparatus according to the present invention.

FIG. 5 is a time chart showing the operation of each oscillation control unit, supply amount adjustment valve, and discharge amount adjustment valve.

FIG. 6 is a sectional view of a conventional substrate processing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 1st processing part 12 processing tank 14 outer tank 16 ultrasonic vibration body 18 oscillation control part 22a supply port 22b discharge port 23a cooling mechanism 24a cooling mechanism 30 2nd processing part 32 processing tank 34 outer tank 36 ultrasonic vibration body 38 oscillation Control unit 42a Supply port 42b Discharge port 43a Cooling mechanism 43a Cooling mechanism 50 Third processing unit 52 Processing tank 54 Outer tank 56 Ultrasonic vibrator 58 Oscillation control unit 62a Supply port 62b Discharge port 63a Cooling mechanism 63a Cooling mechanism 71 Pipe 72 Supply Control valve 75 Communication pipe 76 Cooling mechanism 80 Communication pipe 81 Cooling mechanism 90 Control unit

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3B201 AA03 AB01 AB42 BB03 BB82 BB85 BB92 BB96 CB15 5F043 BB27 DD30 EE02 EE03 EE05 EE10 EE11 EE22 EE35

Claims (12)

[Claims] A first processing tank for performing predetermined processing on the substrate in a state where the substrate is immersed in a processing liquid; a first processing tank disposed on a side and a lower part of the first processing tank for supplying propagation water. A first outer tank having a supply port and a first discharge port for discharging propagation water, having a sealed structure and containing the propagation water, and a first treatment tank through the propagation water in the first outer tank. A first ultrasonic vibration applying means for applying ultrasonic waves to the processing liquid, a second processing tank for performing predetermined processing on the substrate while the substrate is immersed in the processing liquid, and a side part and a lower part of the second processing tank A second outer tank that has a second supply port for supplying the propagation water and a second discharge port for discharging the propagation water, has a closed structure, and stores the propagation water; A second ultrasonic vibration applying means for applying ultrasonic waves to the processing liquid in the second processing tank through propagation water in the outer tank. When, the substrate processing apparatus, characterized in that it and a communication pipe for communicating the first outlet and the second supply port. 2. The substrate processing apparatus according to claim 1, wherein, when the substrate is processed in the first processing tank, the propagation water is supplied from the first supply port to the first outer tank. A substrate processing apparatus for discharging the first through the first discharge port of the first outer tank. 3. The substrate processing apparatus according to claim 1, wherein, when processing the substrate in the second processing tank, propagating water is supplied from the second supply port to the second outer tank. A substrate processing apparatus, wherein the propagating water is discharged from a second discharge port of the second outer tank. 4. The substrate processing apparatus according to claim 1, further comprising a cooling unit for cooling the propagation water. 5. The substrate processing apparatus according to claim 4, wherein said cooling means includes a communication pipe cooling means provided in the middle of said communication pipe. 6. The substrate processing apparatus according to claim 4, wherein said cooling means includes a first cooling unit disposed outside said first outer tank.
A substrate processing apparatus comprising: an outer tank cooling unit; and a second outer tank cooling unit disposed outside the second outer tank. 7. The substrate processing apparatus according to claim 1, wherein a supply amount adjusting means for adjusting a supply amount of the propagation water supplied from the first supply port; A substrate further comprising control means for controlling the supply amount adjusting means to adjust the supply amount of the propagation water based on the operation of the ultrasonic vibration applying means and the second ultrasonic vibration applying means. Processing equipment. 8. A processing tank for performing a predetermined processing on a substrate in a state where the substrate is immersed in a processing liquid; and a supply port and a transmission port for supplying propagation water, which are disposed on a side portion and a lower portion of the processing tank. An outer tank having a discharge port for discharging, having a sealed structure and containing propagation water, and an ultrasonic vibration applying means for applying ultrasonic waves to the processing liquid in the processing tank through the propagation water in the outer tank. And a substrate processing apparatus comprising: 9. The substrate processing apparatus according to claim 8, wherein when processing the substrate in the processing tank, the propagation water is supplied from the supply port to the outer tank and the propagation water is discharged to the outer tank. A substrate processing apparatus characterized by discharging from a substrate. 10. The substrate processing apparatus according to claim 8, further comprising a cooling unit for cooling the propagation water. 11. The substrate processing apparatus according to claim 10, wherein said cooling means includes an outer tank cooling means disposed outside said outer tank. 12. The substrate processing apparatus according to claim 8, wherein a supply amount adjusting unit that adjusts a supply amount of the propagation water supplied from the supply port, and the ultrasonic vibration applying unit. A control unit for controlling the supply amount adjusting unit to adjust the supply amount of the propagation water based on the operation of the substrate processing apparatus.