JP2001330860A5 - - Google Patents

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Publication number
JP2001330860A5
JP2001330860A5 JP2001053109A JP2001053109A JP2001330860A5 JP 2001330860 A5 JP2001330860 A5 JP 2001330860A5 JP 2001053109 A JP2001053109 A JP 2001053109A JP 2001053109 A JP2001053109 A JP 2001053109A JP 2001330860 A5 JP2001330860 A5 JP 2001330860A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001053109A
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Japanese (ja)
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JP2001330860A (ja
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Publication date
Application filed filed Critical
Priority to JP2001053109A priority Critical patent/JP2001330860A/ja
Priority claimed from JP2001053109A external-priority patent/JP2001330860A/ja
Publication of JP2001330860A publication Critical patent/JP2001330860A/ja
Publication of JP2001330860A5 publication Critical patent/JP2001330860A5/ja
Withdrawn legal-status Critical Current

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JP2001053109A 2000-02-28 2001-02-27 半導体装置及びその作製方法 Withdrawn JP2001330860A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001053109A JP2001330860A (ja) 2000-02-28 2001-02-27 半導体装置及びその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000050644 2000-02-28
JP2000-50644 2000-03-13
JP2000-69556 2000-03-13
JP2000069556 2000-03-13
JP2001053109A JP2001330860A (ja) 2000-02-28 2001-02-27 半導体装置及びその作製方法

Publications (2)

Publication Number Publication Date
JP2001330860A JP2001330860A (ja) 2001-11-30
JP2001330860A5 true JP2001330860A5 (es) 2008-03-27

Family

ID=27342489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001053109A Withdrawn JP2001330860A (ja) 2000-02-28 2001-02-27 半導体装置及びその作製方法

Country Status (1)

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JP (1) JP2001330860A (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6882012B2 (en) * 2000-02-28 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
US7749818B2 (en) * 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7123332B2 (en) 2003-05-12 2006-10-17 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, electronic device having the same, and semiconductor device
JP2004361937A (ja) * 2003-05-12 2004-12-24 Semiconductor Energy Lab Co Ltd 液晶表示装置及びその作製方法
JP2006189806A (ja) * 2004-12-06 2006-07-20 Semiconductor Energy Lab Co Ltd 表示装置及びその駆動方法
KR101233639B1 (ko) 2005-12-27 2013-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조방법
US7960916B2 (en) 2007-05-16 2011-06-14 Advanced Lcd Technologies Development Center Co., Ltd. Display device and electronic device using thin-film transistors formed on semiconductor thin films which are crystallized on insulating substrates
JP5205012B2 (ja) 2007-08-29 2013-06-05 株式会社半導体エネルギー研究所 表示装置及び当該表示装置を具備する電子機器
KR101920196B1 (ko) * 2008-09-19 2018-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
GB0819449D0 (en) * 2008-10-23 2008-12-03 Cambridge Display Tech Ltd Display drivers
CN110622316B (zh) 2017-09-26 2023-04-14 株式会社Lg化学 用于透明发光二极管显示器的电极基底及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2953023B2 (ja) * 1990-10-18 1999-09-27 三菱電機株式会社 マトリックス表示装置
JPH06138481A (ja) * 1992-10-23 1994-05-20 Sharp Corp アクティブマトリクス基板およびその製造方法
JPH1056184A (ja) * 1996-06-04 1998-02-24 Semiconductor Energy Lab Co Ltd 半導体集積回路およびその作製方法
JP3943200B2 (ja) * 1997-08-01 2007-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH11160734A (ja) * 1997-11-28 1999-06-18 Semiconductor Energy Lab Co Ltd 液晶電気光学装置

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