JP2001318157A - バンドギャップ放射線検出器 - Google Patents

バンドギャップ放射線検出器

Info

Publication number
JP2001318157A
JP2001318157A JP80000792A JP80000792A JP2001318157A JP 2001318157 A JP2001318157 A JP 2001318157A JP 80000792 A JP80000792 A JP 80000792A JP 80000792 A JP80000792 A JP 80000792A JP 2001318157 A JP2001318157 A JP 2001318157A
Authority
JP
Japan
Prior art keywords
detector
radiation
pattern
elements
impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP80000792A
Other languages
English (en)
Japanese (ja)
Inventor
Dayton D Eden
デール エデン デイトン
William Edward Case
エドワード ケース ウイリアム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lockheed Martin Corp
Original Assignee
Loral Vought Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to CA002036874A priority Critical patent/CA2036874A1/en
Priority to DE4107331A priority patent/DE4107331B4/de
Priority to IT1991RM000248A priority patent/IT1314365B1/it
Priority to FR9110580A priority patent/FR2803948B1/fr
Priority to GB9119200A priority patent/GB2348539B/en
Application filed by Loral Vought Systems Corp filed Critical Loral Vought Systems Corp
Priority to JP80000792A priority patent/JP2001318157A/ja
Publication of JP2001318157A publication Critical patent/JP2001318157A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0837—Microantennas, e.g. bow-tie
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/006—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H01Q21/062—Two dimensional planar arrays using dipole aerials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Measurement Of Radiation (AREA)
JP80000792A 1991-02-22 1992-04-20 バンドギャップ放射線検出器 Pending JP2001318157A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CA002036874A CA2036874A1 (en) 1991-02-22 1991-02-22 Bandgap radiation detector and method of fabrication
DE4107331A DE4107331B4 (de) 1991-02-22 1991-03-07 Infrarotstrahlungsquantendetektor
IT1991RM000248A IT1314365B1 (it) 1991-02-22 1991-04-11 Rivelatore di radiazioni nell'infrarosso e relativo metodo difabbricazione
FR9110580A FR2803948B1 (fr) 1991-02-22 1991-08-23 Detecteur de rayonnement, notamment de rayonnement infrarouge, et procede pour sa fabrication
GB9119200A GB2348539B (en) 1991-02-22 1991-09-09 Bandgap radiation detector and method of fabrication
JP80000792A JP2001318157A (ja) 1991-02-22 1992-04-20 バンドギャップ放射線検出器

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
CA002036874A CA2036874A1 (en) 1991-02-22 1991-02-22 Bandgap radiation detector and method of fabrication
DE4107331A DE4107331B4 (de) 1991-02-22 1991-03-07 Infrarotstrahlungsquantendetektor
IT1991RM000248A IT1314365B1 (it) 1991-02-22 1991-04-11 Rivelatore di radiazioni nell'infrarosso e relativo metodo difabbricazione
FR9110580A FR2803948B1 (fr) 1991-02-22 1991-08-23 Detecteur de rayonnement, notamment de rayonnement infrarouge, et procede pour sa fabrication
GB9119200A GB2348539B (en) 1991-02-22 1991-09-09 Bandgap radiation detector and method of fabrication
JP80000792A JP2001318157A (ja) 1991-02-22 1992-04-20 バンドギャップ放射線検出器

Publications (1)

Publication Number Publication Date
JP2001318157A true JP2001318157A (ja) 2001-11-16

Family

ID=28046955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP80000792A Pending JP2001318157A (ja) 1991-02-22 1992-04-20 バンドギャップ放射線検出器

Country Status (6)

Country Link
JP (1) JP2001318157A (enExample)
CA (1) CA2036874A1 (enExample)
DE (1) DE4107331B4 (enExample)
FR (1) FR2803948B1 (enExample)
GB (1) GB2348539B (enExample)
IT (1) IT1314365B1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053734B2 (en) * 2009-04-30 2011-11-08 Raytehon Company Nano-antenna for wideband coherent conformal IR detector arrays
US7923689B2 (en) * 2009-04-30 2011-04-12 Raytheon Company Multi-band sub-wavelength IR detector having frequency selective slots and method of making the same
CN114649428B (zh) * 2022-03-23 2023-02-17 中国科学院半导体研究所 新型二维/三维异质异构的高速光电探测器及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4445050A (en) * 1981-12-15 1984-04-24 Marks Alvin M Device for conversion of light power to electric power
EP0018744B1 (en) * 1979-05-01 1984-07-18 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Radiation detectors
GB2207801B (en) * 1979-07-30 1989-05-24 Secr Defence Thermal imaging devices
US4327291A (en) * 1980-06-16 1982-04-27 Texas Instruments Incorporated Infrared charge injection device imaging system
GB2095900B (en) * 1981-03-30 1985-01-09 Philips Electronic Associated Imaging devices and systems
DE3200853A1 (de) * 1982-01-14 1983-07-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einer bildaufnahmeeinheit und mit einer ausleseeinheit sowie verfahren zu ihrer herstellung
GB2207802B (en) * 1982-08-27 1989-06-01 Philips Electronic Associated Thermal-radiation imaging devices and systems,and the manufacture of such imaging devices
US5248884A (en) * 1983-10-11 1993-09-28 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Infrared detectors
US4888597A (en) * 1987-12-14 1989-12-19 California Institute Of Technology Millimeter and submillimeter wave antenna structure
GB2239555B (en) * 1989-03-01 1993-02-24 Philips Electronic Associated Infrared image-sensing devices and their manufacture
JPH0321078A (ja) * 1989-06-19 1991-01-29 Fujitsu Ltd 赤外線検知素子
JP2773930B2 (ja) * 1989-10-31 1998-07-09 三菱電機株式会社 光検知装置

Also Published As

Publication number Publication date
GB2348539B (en) 2001-02-21
DE4107331A1 (de) 2003-07-03
ITRM910248A1 (it) 1992-10-11
CA2036874A1 (en) 2002-07-10
GB2348539A (en) 2000-10-04
GB9119200D0 (en) 2000-08-23
ITRM910248A0 (enExample) 1991-04-11
FR2803948A1 (fr) 2001-07-20
FR2803948B1 (fr) 2003-01-31
IT1314365B1 (it) 2002-12-09
DE4107331B4 (de) 2005-11-17

Similar Documents

Publication Publication Date Title
US6355939B1 (en) Multi-band infrared photodetector
JP3542965B2 (ja) デュアルバンド量子井戸赤外線センシングアレイ
US5539206A (en) Enhanced quantum well infrared photodetector
US6441374B1 (en) Thermal type infrared ray detector with thermal separation structure for high sensitivity
US6580089B2 (en) Multi-quantum-well infrared sensor array in spatially-separated multi-band configuration
US6201242B1 (en) Bandgap radiation detector
US7238960B2 (en) QWIP with enhanced optical coupling
CN102237432B (zh) 一种太赫兹或红外频段灵敏光子探测器
CA2351430C (en) Wavelength-insensitive radiation coupling for multi-quantum well sensor based on intersubband absorption
US6054718A (en) Quantum well infrared photocathode having negative electron affinity surface
US6114697A (en) Bandgap radiation detector
US6271537B1 (en) Slotted quantum well sensor
NL9500502A (enExample)
US20060000974A1 (en) Polarization and wavelength-selective patch-coupled infrared photodetector
US4996432A (en) Radiation detector
US5536948A (en) Infrared detector element substrate with superlattice layers
JP3549363B2 (ja) 赤外線固体撮像素子
JP2001318157A (ja) バンドギャップ放射線検出器
CN111739950A (zh) 太赫兹光电探测器
CN114127523B (zh) 具有减小的像素间距的微测辐射热计
US7217926B1 (en) Systems involving voltage-tunable quantum-well infrared photodetectors (QWIPs) and related methods
JP4490515B2 (ja) トンネル効果超伝導検出セル
CN114207396B (zh) 具有滤波功能的微测辐射热计
JPH0534610B2 (enExample)
JP7593254B2 (ja) ２波長赤外線センサ、及び撮像システム