|
WO2003034508A1
(en)
|
2001-10-12 |
2003-04-24 |
Nichia Corporation |
Light emitting device and method for manufacture thereof
|
|
US7148520B2
(en)
|
2001-10-26 |
2006-12-12 |
Lg Electronics Inc. |
Diode having vertical structure and method of manufacturing the same
|
|
US6744071B2
(en)
|
2002-01-28 |
2004-06-01 |
Nichia Corporation |
Nitride semiconductor element with a supporting substrate
|
|
US8294172B2
(en)
|
2002-04-09 |
2012-10-23 |
Lg Electronics Inc. |
Method of fabricating vertical devices using a metal support film
|
|
JP3896027B2
(ja)
|
2002-04-17 |
2007-03-22 |
シャープ株式会社 |
窒化物系半導体発光素子およびその製造方法
|
|
JP4233268B2
(ja)
|
2002-04-23 |
2009-03-04 |
シャープ株式会社 |
窒化物系半導体発光素子およびその製造方法
|
|
US6841802B2
(en)
|
2002-06-26 |
2005-01-11 |
Oriol, Inc. |
Thin film light emitting diode
|
|
KR101030068B1
(ko)
|
2002-07-08 |
2011-04-19 |
니치아 카가쿠 고교 가부시키가이샤 |
질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
|
|
KR101095753B1
(ko)
|
2002-08-01 |
2011-12-21 |
니치아 카가쿠 고교 가부시키가이샤 |
반도체 발광 소자 및 그 제조 방법과 그것을 이용한 발광장치
|
|
WO2005088743A1
(en)
|
2004-03-15 |
2005-09-22 |
Tinggi Technologies Private Limited |
Fabrication of semiconductor devices
|
|
KR20070028364A
(ko)
|
2004-04-07 |
2007-03-12 |
팅기 테크놀러지스 프라이빗 리미티드 |
반도체 발광 다이오드상의 반사층 제조
|
|
US8174037B2
(en)
*
|
2004-09-22 |
2012-05-08 |
Cree, Inc. |
High efficiency group III nitride LED with lenticular surface
|
|
US8685764B2
(en)
*
|
2005-01-11 |
2014-04-01 |
SemiLEDs Optoelectronics Co., Ltd. |
Method to make low resistance contact
|
|
KR100707955B1
(ko)
*
|
2005-02-07 |
2007-04-16 |
(주) 비앤피 사이언스 |
발광 다이오드 및 이의 제조 방법
|
|
TWI257723B
(en)
*
|
2005-09-15 |
2006-07-01 |
Epitech Technology Corp |
Vertical light-emitting diode and method for manufacturing the same
|
|
KR100976311B1
(ko)
*
|
2005-09-16 |
2010-08-16 |
쇼와 덴코 가부시키가이샤 |
질화물 반도체 발광장치 제조 방법
|
|
SG130975A1
(en)
|
2005-09-29 |
2007-04-26 |
Tinggi Tech Private Ltd |
Fabrication of semiconductor devices for light emission
|
|
SG131803A1
(en)
|
2005-10-19 |
2007-05-28 |
Tinggi Tech Private Ltd |
Fabrication of transistors
|
|
JP5289055B2
(ja)
|
2005-10-21 |
2013-09-11 |
テイラー・バイオマス・エナジー・エルエルシー |
現場（ｉｎ−ｓｉｔｕ）タール除去によるガス化プロセスとシステム
|
|
SG133432A1
(en)
|
2005-12-20 |
2007-07-30 |
Tinggi Tech Private Ltd |
Localized annealing during semiconductor device fabrication
|
|
KR100735496B1
(ko)
*
|
2006-05-10 |
2007-07-04 |
삼성전기주식회사 |
수직구조 질화갈륨계 ｌｅｄ 소자의 제조방법
|
|
US8174025B2
(en)
*
|
2006-06-09 |
2012-05-08 |
Philips Lumileds Lighting Company, Llc |
Semiconductor light emitting device including porous layer
|
|
SG140473A1
(en)
|
2006-08-16 |
2008-03-28 |
Tinggi Tech Private Ltd |
Improvements in external light efficiency of light emitting diodes
|
|
SG140512A1
(en)
|
2006-09-04 |
2008-03-28 |
Tinggi Tech Private Ltd |
Electrical current distribution in light emitting devices
|
|
JP4985930B2
(ja)
*
|
2006-11-08 |
2012-07-25 |
シャープ株式会社 |
窒化物系化合物半導体発光素子およびその製造方法
|
|
JP5214175B2
(ja)
*
|
2007-06-08 |
2013-06-19 |
日亜化学工業株式会社 |
窒化物半導体発光素子および発光素子の製造方法
|
|
JP4719244B2
(ja)
*
|
2008-04-25 |
2011-07-06 |
シャープ株式会社 |
窒化物系化合物半導体発光素子およびその製造方法
|
|
JP5381021B2
(ja)
*
|
2008-11-05 |
2014-01-08 |
コニカミノルタ株式会社 |
薄膜トランジスタの製造方法、及び薄膜トランジスタ
|
|
JP5066274B1
(ja)
|
2011-05-16 |
2012-11-07 |
株式会社東芝 |
半導体発光素子
|
|
CN103515488A
(zh)
*
|
2012-06-25 |
2014-01-15 |
杭州华普永明光电股份有限公司 |
Led芯片的制作工艺及其led芯片
|
|
CN118073959B
(zh)
*
|
2024-04-16 |
2024-07-05 |
苏州长光华芯光电技术股份有限公司 |
一种低翘曲半导体激光器及其制备方法
|