JP2001311954A5 - - Google Patents
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- JP2001311954A5 JP2001311954A5 JP2000134189A JP2000134189A JP2001311954A5 JP 2001311954 A5 JP2001311954 A5 JP 2001311954A5 JP 2000134189 A JP2000134189 A JP 2000134189A JP 2000134189 A JP2000134189 A JP 2000134189A JP 2001311954 A5 JP2001311954 A5 JP 2001311954A5
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- JP
- Japan
- Prior art keywords
- conductive layer
- liquid crystal
- display device
- crystal display
- pair
- Prior art date
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- 239000004973 liquid crystal related substance Substances 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 11
- 239000011159 matrix material Substances 0.000 claims 3
- 239000010409 thin film Substances 0.000 claims 2
Claims (10)
前記一対の基板の一方に形成される複数の走査信号線と、前記走査信号線とマトリクス状に交差する複数の映像信号線のいずれかが第1の導電層と第2の導電層からなる積層構造を含み、前記第1の導電層はAlを主成分とし、前記第2の導電層はZrを含有する
Moを主成分とし、前記Zrの含有量が、2.6 重量%以上で23重量%以下であることを特徴とする液晶表示装置。In a liquid crystal display device including a pair of substrates and a liquid crystal layer sandwiched between the pair of substrates,
A plurality of scanning signal lines formed on one of the pair of substrates, and a plurality of video signal lines intersecting the scanning signal lines in a matrix, each including a first conductive layer and a second conductive layer; The first conductive layer is mainly composed of Al, the second conductive layer is mainly composed of Mo containing Zr, and the Zr content is not less than 2.6% by weight and 23% by weight. % Or less.
前記一対の基板の一方に形成される複数の走査信号線と、前記走査信号線とマトリクス状に交差する複数の映像信号線のいずれかが第1の導電層と第2の導電層からなる積層構造を含み、前記第1の導電層はAlを主成分とし、前記第2の導電層はZrを含有する
Moを主成分とし、前記Zrの含有量が、4.0 重量%以上で14重量%以下であることを特徴とする液晶表示装置。In a liquid crystal display device including a pair of substrates and a liquid crystal layer sandwiched between the pair of substrates,
A plurality of scanning signal lines formed on one of the pair of substrates, and a plurality of video signal lines intersecting the scanning signal lines in a matrix, each including a first conductive layer and a second conductive layer; Wherein the first conductive layer is mainly composed of Al, the second conductive layer is mainly composed of Mo containing Zr, and the content of Zr is not less than 4.0% by weight and 14% by weight. % Or less.
前記一対の基板の一方に形成される複数の走査信号線と、前記走査信号線とマトリクス状に交差する複数の映像信号線のいずれかが第1の導電層と第2の導電層と第3の導電層からなる3層構造を含み、前記第1の導電層はAlを主成分とし、前記第2の導電層は
Zrを含有するMoを主成分とし、前記第3の導電層はMoを主成分とし、前記Zrの含有量が、4.0 重量%以上で14重量%以下であることを特徴とする液晶表示装置。In a liquid crystal display device including a pair of substrates and a liquid crystal layer sandwiched between the pair of substrates,
A plurality of scanning signal lines formed on one of the pair of substrates and a plurality of video signal lines intersecting the scanning signal lines in a matrix are formed of a first conductive layer, a second conductive layer, and a third conductive layer. Wherein the first conductive layer is mainly composed of Al, the second conductive layer is mainly composed of Mo containing Zr, and the third conductive layer is composed of Mo. A liquid crystal display device as a main component, wherein the content of Zr is 4.0% by weight or more and 14% by weight or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000134189A JP3785900B2 (en) | 2000-04-28 | 2000-04-28 | Liquid crystal display device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000134189A JP3785900B2 (en) | 2000-04-28 | 2000-04-28 | Liquid crystal display device and manufacturing method thereof |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2001311954A JP2001311954A (en) | 2001-11-09 |
JP2001311954A5 true JP2001311954A5 (en) | 2004-11-18 |
JP3785900B2 JP3785900B2 (en) | 2006-06-14 |
Family
ID=18642515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000134189A Expired - Fee Related JP3785900B2 (en) | 2000-04-28 | 2000-04-28 | Liquid crystal display device and manufacturing method thereof |
Country Status (1)
Country | Link |
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JP (1) | JP3785900B2 (en) |
Cited By (1)
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---|---|---|---|---|
JP7493080B2 (en) | 2019-12-02 | 2024-05-30 | パイオニア株式会社 | Light-emitting device |
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KR20030016051A (en) | 2001-08-20 | 2003-02-26 | 삼성전자주식회사 | Thin film transistor array panel for a liquid crystal display and a manufacturing method thereof |
JPWO2003036707A1 (en) * | 2001-10-22 | 2005-02-17 | 三菱瓦斯化学株式会社 | Etching method of aluminum / molybdenum multilayer film |
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US7169461B2 (en) | 2002-10-17 | 2007-01-30 | Asahi Glass Company, Limited | Laminate, a substrate with wires, an organic EL display element, a connection terminal for the organic EL display element and a method for producing each |
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JP2004356616A (en) * | 2003-05-28 | 2004-12-16 | Samsung Electronics Co Ltd | Etchant for wiring and method for manufacturing thin film transistor display panel using the same |
WO2006051608A1 (en) * | 2004-11-09 | 2006-05-18 | Advanced Display Inc. | Etching liquid and etching method |
US8038857B2 (en) | 2004-03-09 | 2011-10-18 | Idemitsu Kosan Co., Ltd. | Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes |
KR101061850B1 (en) * | 2004-09-08 | 2011-09-02 | 삼성전자주식회사 | Thin film transistor array panel and manufacturing method thereof |
JP4749179B2 (en) * | 2005-02-24 | 2011-08-17 | 関東化学株式会社 | Etching composition for titanium and aluminum metal laminate film |
JP4804867B2 (en) * | 2005-10-18 | 2011-11-02 | 出光興産株式会社 | Transparent conductive film, transparent electrode, electrode substrate and manufacturing method thereof |
JP4947942B2 (en) * | 2005-09-20 | 2012-06-06 | 出光興産株式会社 | Sputtering target |
CN103469167A (en) * | 2005-09-01 | 2013-12-25 | 出光兴产株式会社 | Sputtering target, transparent conductive film, transparent electrode, electrode substrate, and method for producing same |
KR100870217B1 (en) * | 2005-11-29 | 2008-11-24 | 미쓰비시덴키 가부시키가이샤 | Etchant and method of etching |
EP2924498A1 (en) | 2006-04-06 | 2015-09-30 | Semiconductor Energy Laboratory Co, Ltd. | Liquid crystal desplay device, semiconductor device, and electronic appliance |
JP2008065300A (en) * | 2006-08-11 | 2008-03-21 | Nec Lcd Technologies Ltd | Liquid crystal display device |
JP5713204B2 (en) * | 2006-08-11 | 2015-05-07 | Nltテクノロジー株式会社 | Liquid crystal display |
TWI405875B (en) * | 2006-08-22 | 2013-08-21 | Kanto Kagaku | Echant compositions for metal laminated films having titanium and aluminum layer |
JP5010873B2 (en) * | 2006-08-23 | 2012-08-29 | 関東化学株式会社 | Etching composition for titanium and aluminum metal laminate film |
JP4747186B2 (en) * | 2008-06-02 | 2011-08-17 | Nec液晶テクノロジー株式会社 | Composite wet etching method of laminated film |
JP5256868B2 (en) * | 2008-06-10 | 2013-08-07 | 日本精機株式会社 | Laminated body and organic EL panel |
JP2011040593A (en) * | 2009-08-12 | 2011-02-24 | Seiko Epson Corp | Semiconductor device and method for manufacturing semiconductor device |
JP5452343B2 (en) * | 2010-04-27 | 2014-03-26 | 株式会社ジャパンディスプレイ | Display device and manufacturing method thereof |
TWI562427B (en) * | 2013-07-19 | 2016-12-11 | Lg Display Co Ltd | Electrode laminate and organic light emitting device |
WO2015125309A1 (en) * | 2014-02-24 | 2015-08-27 | パイオニア株式会社 | Light emitting device |
KR102197854B1 (en) | 2014-05-13 | 2021-01-05 | 삼성디스플레이 주식회사 | Thin film transistor, display substrate having thereof and method for manufacturing the same |
US20170278879A1 (en) * | 2014-09-03 | 2017-09-28 | Sharp Kabushiki Kaisha | Method for manufacturing metal lamination film, method for manufacturing semiconductor device, and method for manufacturing liquid crystal display device |
US10824285B2 (en) | 2018-02-06 | 2020-11-03 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Electrode structure and method for manufacturing the same |
CN108399030B (en) * | 2018-02-06 | 2020-09-04 | 武汉华星光电半导体显示技术有限公司 | Electrode structure and manufacturing method thereof |
JP2018129313A (en) * | 2018-05-15 | 2018-08-16 | パイオニア株式会社 | Light-emitting device |
CN110752255A (en) * | 2018-07-23 | 2020-02-04 | 株式会社理光 | Metal oxide, field effect transistor and manufacturing method thereof |
CN112216704A (en) * | 2019-07-12 | 2021-01-12 | 群创光电股份有限公司 | Circuit structure and electronic device comprising same |
CN113985667B (en) * | 2021-10-12 | 2023-08-01 | Tcl华星光电技术有限公司 | Array substrate, preparation method thereof and liquid crystal display panel |
-
2000
- 2000-04-28 JP JP2000134189A patent/JP3785900B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7493080B2 (en) | 2019-12-02 | 2024-05-30 | パイオニア株式会社 | Light-emitting device |
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