JP2001305515A - Method and device for manufacturing reflection type liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that the cost and the number of processes are increased because a very expensive organic insulation film coating must be applied twice for forming a reflection electrode ruggedness in a manufacturing method of a conventional reflection type liquid crystal display device. SOLUTION: In the manufacturing method of the reflection type liquid crystal display device, by forming a recessed part by under-exposure or exposure by shitting focus of the organic insulation film, the reflection electrode with ruggedness can be formed by organic insulation film coating of only once.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflection type liquid crystal display device used for an image display application device, a method of manufacturing the same,
And a manufacturing apparatus.

[0002]

2. Description of the Related Art In recent years, the application of liquid crystal display devices to image display devices such as notebook personal computers and PDAs has been rapidly progressing. In particular, among liquid crystal display devices, a reflection type liquid crystal display device that performs display by reflecting light incident from the outside does not require a backlight, so that the power required for this is greatly reduced, so that a heavy battery can be used. It has attracted attention because it can be removed and made ultra-thin and ultra-light.

In order to improve the display performance of a reflection type liquid crystal display device, it is important to control the reflection performance of a reflection plate.

Since the reflecting plate reflects incident light from all angles with respect to the reflecting surface in the display direction, the surface of the reflecting plate having an uneven shape is excellent in display quality.

Hereinafter, a conventional reflection type liquid crystal display device will be described.

FIGS. 2A to 2D are cross-sectional flowcharts of a conventional reflection type liquid crystal display device. As shown in FIG. 2A, a gate electrode 2 made of aluminum, titanium or the like is formed on an insulating substrate 1 made of glass or the like. Silicon nitride (hereinafter, referred to as silicon nitride) covers the entire surface of the substrate 1 covering the gate electrode 2.
Notated as SiNx. ) Is formed. On the gate insulating film 3 on the gate electrode 2, a semiconductor layer 4 made of amorphous silicon (hereinafter referred to as a-Si) or the like is formed.
To form At one end of the semiconductor layer 4, a source electrode 5 made of aluminum, titanium, or the like is formed. Also,
A drain electrode 6 made of aluminum, titanium, or the like is formed at the other end of the semiconductor layer 4 in the same manner as the source electrode 5.

Further, as shown in FIG. 2B, the thin film transistor 11 formed as described above (hereinafter referred to as TFT
), An insulating film 12 made of SiNx or the like is formed on the entire surface of the substrate 1. Further, after forming a photosensitive organic insulating film 13A over the entire surface of the TFT 11, the gate insulating film 3, the insulating film 12, and the photosensitive organic insulating film 13A are patterned by etching or the like in a region where there is no TFT, and the concave portion of the reflective electrode is formed. Hole 14A is formed.

Further, as shown in FIG. 2C, the hole 14A for the concave portion of the reflection electrode is completely filled.
A photosensitive organic insulating film 13B capable of forming irregularities is applied.
Thereby, irregularities can be formed on the photosensitive organic insulating film 13B. However, the contact hole 14B on the drain electrode 6 is patterned by exposure and development steps.

Further, as shown in FIG. 2D, a reflection electrode made of a light-reflective metal such as aluminum is formed on the entire surface of the substrate 1 so as to cover the photosensitive organic insulating film 13B by photo, etching, and resist stripping. 15 are formed. As a result, the reflective electrode 15 can have a desired unevenness reflecting the unevenness of the underlying photosensitive organic insulating film. The reflection electrode 15 is connected to the drain electrode 6 through the contact hole 14B.

[0010]

In the conventional method of manufacturing a reflective liquid crystal display device, in order to form a reflective electrode having irregularities, after forming a hole for a concave portion of the reflective electrode made of a photosensitive organic insulating film, the method is further performed. Since the photosensitive organic insulating film is applied, the photosensitive organic insulating film is exposed, and the photosensitive organic insulating film is further developed, a very expensive photosensitive organic insulating film is applied twice. However, there is a problem that the cost increases and the number of steps also increases.

The present invention is directed to a method of manufacturing a reflective liquid crystal display device which can form a reflective electrode having irregularities only by coating a photosensitive organic insulating film once without using a method which increases the number of steps. The purpose is to provide.

[0012]

In order to solve this problem, a liquid crystal display panel according to the present invention is a reflective electrode having unevenness by forming a concave portion by exposing a photosensitive organic insulating film to underexposure or by shifting the focus. Is formed.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The first embodiment of the present invention will be described below with reference to the drawings.

FIGS. 1A to 1C are cross-sectional flowcharts of a reflection type liquid crystal display device according to a first embodiment of the present invention. FIG.
As shown in FIG. 1A, a gate electrode 2 made of aluminum, titanium or the like is formed on an insulating substrate 1 made of glass or the like. A gate insulating film 3 made of silicon nitride (hereinafter, referred to as SiNx) is formed on the entire surface of the substrate 1 so as to cover the gate electrode 2. On the gate insulating film 3 on the gate electrode 2, a semiconductor layer 4 made of amorphous silicon (hereinafter referred to as a-Si) or the like is formed. At one end of the semiconductor layer 4, a source electrode 5 made of aluminum, titanium, or the like is formed. At the other end of the semiconductor layer 4, a drain electrode 6 made of aluminum, titanium, or the like is formed in the same manner as the source electrode 5.

Further, as shown in FIG. 1B, an insulating film 12 made of SiNx or the like is formed on the entire surface of the substrate 1 so as to cover the thin film transistor 11 (hereinafter, referred to as TFT) formed as described above. Further, after a photosensitive organic insulating film 23 is applied to the entire upper surface of the TFT 11, under exposure is performed to form a concave portion. However, the drain electrode 6
The contact hole 14B is formed by exposing a photomask, exposing for an appropriate exposure time, and patterning by etching.

Further, as shown in FIG. 1C, a reflective electrode made of a metal having light reflectivity such as aluminum is formed on the entire surface of the substrate 1 so as to cover the photosensitive organic insulating film 23 by photo, etching, and resist stripping. 25 are formed.
As a result, the reflective electrode 25 can have a desired unevenness reflecting the unevenness of the underlying photosensitive organic insulating film. The reflection electrode 15 is connected to the drain electrode 6 through the contact hole 14B.

A second embodiment of the present invention will be described below with reference to the drawings.

FIGS. 3A to 3C are cross-sectional flowcharts of a reflection type liquid crystal display device according to a second embodiment of the present invention. FIG.
As shown in FIG. 1A, a gate electrode 2 made of aluminum, titanium or the like is formed on an insulating substrate 1 made of glass or the like. A gate insulating film 3 made of silicon nitride (hereinafter, referred to as SiNx) is formed on the entire surface of the substrate 1 so as to cover the gate electrode 2. On the gate insulating film 3 on the gate electrode 2, a semiconductor layer 4 made of amorphous silicon (hereinafter referred to as a-Si) or the like is formed. At one end of the semiconductor layer 4, a source electrode 5 made of aluminum, titanium, or the like is formed. At the other end of the semiconductor layer 4, a drain electrode 6 made of aluminum, titanium, or the like is formed in the same manner as the source electrode 5.

Further, as shown in FIG. 3B, an insulating film 12 made of SiNx or the like is formed on the entire surface of the substrate 1 so as to cover the thin film transistor 11 (hereinafter referred to as TFT) formed as described above. Further, after the photosensitive organic insulating film 23 is applied to the entire upper surface of the TFT 11, a concave portion is formed by shifting the focus from an optimum value to an appropriate value at the time of exposure. However, a contact hole 14B is formed on the drain electrode 6 by exchanging a photomask, performing appropriate exposure, and patterning by etching.

Further, as shown in FIG. 3 (c), a reflection electrode made of a light-reflective metal such as aluminum is formed on the entire surface of the substrate 1 so as to cover the photosensitive organic insulating film 23 by photo, etching, and resist stripping. 25 are formed.
As a result, the reflective electrode 25 can have a desired unevenness reflecting the unevenness of the underlying photosensitive organic insulating film. The reflection electrode 15 is connected to the drain electrode 6 through the contact hole 14B.

[0021]

According to the present invention, since a concave portion is formed by exposing an organic insulating film to underexposure or shifted focus, a reflective electrode having irregularities can be formed by a single application of the organic insulating film. Is big.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a method of manufacturing a reflective liquid crystal display device according to a first embodiment of the present invention.

FIG. 2 is an explanatory diagram of a method for manufacturing a conventional reflective liquid crystal display device.

FIG. 3 is an explanatory diagram of a method of manufacturing a reflective liquid crystal display device according to a second embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 1 substrate 2 gate electrode 3 gate insulating film 4 semiconductor layer 5 source electrode 6 drain electrode 11 thin film transistor 12 insulating film 13A photosensitive organic insulating film A 13B photosensitive organic insulating film B 14A hole for reflective electrode recess 14B contact hole 15 reflective electrode 23 photosensitive organic insulating film 25 reflective electrode

Continued on the front page F term (reference) 2H090 HA04 HA07 HB13X HC01 HD06 JA03 JC03 LA20 2H091 FA16Y FB04 FB08 FC02 FC10 FD04 GA07 GA13 LA12 2H092 JA24 JB07 JB56 KB13 KB25 MA16 NA27 PA12 5C094 AA43 AA24 BA03 EA03 CA19 FB01 FB12 FB15 GB10 HA08

Claims (4)

[Claims] 1. A method for manufacturing a reflective liquid crystal display device, comprising forming a concave and convex reflective electrode by underexposing a photosensitive organic insulating film to form a concave. 2. A method of manufacturing a reflection type liquid crystal display device, wherein a photosensitive organic insulating film is exposed with shifted focus to form a concave portion, thereby forming a reflective electrode having irregularities. 3. An apparatus for manufacturing a reflective liquid crystal display device, comprising the method for manufacturing a reflective liquid crystal display device according to claim 1. 4. An image display application device having a reflective liquid crystal display device manufactured by the method of manufacturing a reflective liquid crystal display device according to claim 1.