JP2001293443A - Device and method for cleaning substrate - Google Patents
Device and method for cleaning substrateInfo
- Publication number
- JP2001293443A JP2001293443A JP2000109852A JP2000109852A JP2001293443A JP 2001293443 A JP2001293443 A JP 2001293443A JP 2000109852 A JP2000109852 A JP 2000109852A JP 2000109852 A JP2000109852 A JP 2000109852A JP 2001293443 A JP2001293443 A JP 2001293443A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cleaning
- cleaning apparatus
- ultraviolet irradiation
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、被洗浄物を洗浄す
る洗浄装置および洗浄方法であって、半導体材料・ＵＬ
ＳＩ・ウェーハなどの基板を被洗浄物とし、なかでもフ
オトマスク製作用のガラス、Si等の基板またはこの基板
上に製作して構成された薄膜構造物に付着した異物を洗
浄する装置およびその方法に関するものである。その他
にも、液晶、ＧＭＲヘッド、ハードディスクなどの基板
洗浄の分野にも関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning apparatus and a cleaning method for cleaning an object to be cleaned.
The present invention relates to an apparatus and a method for cleaning foreign substances adhering to a substrate such as a SI / wafer or the like, and particularly to a glass or Si substrate or a thin film structure manufactured and formed on the substrate, for producing a photomask. Things. In addition, the present invention relates to a field of cleaning a substrate such as a liquid crystal, a GMR head, and a hard disk.
【０００２】[0002]
【従来の技術】従来、ULSIの製造工程で基板に微粒子等
の汚染物が付着すると製品の品質が著しく低下する。こ
のために、ウェーハおよびその上に作製して構成された
薄膜構造物等の基板を高性能に洗浄する装置およびその
方法として、例えば、出願人による特許第2959763号「ウ
ェーハ洗浄装置」がある。この発明はULSI製造用ウェー
ハを対象としているが、フオトマスク等他の分野の基板
洗浄にも適用可能である。この装置を具体的に説明する
と、ウェーハまたはその上に製作した薄膜構造物等の基
板を搬送機構により処理部に搬送し、ラバール形状等超
音速流を発生することが可能なノズルから純水などの洗
浄液を圧縮空気により超音速に加速して噴出させ、上記
基板表面に作用させ洗浄する基板洗浄装置である。2. Description of the Related Art Conventionally, when contaminants such as fine particles adhere to a substrate in a ULSI manufacturing process, the quality of a product is significantly reduced. For this purpose, as an apparatus and method for cleaning a wafer and a substrate such as a thin film structure formed thereon with high performance, for example, there is Japanese Patent No. 2959763 “Wafer Cleaning Apparatus” by the applicant. The present invention is directed to a wafer for ULSI manufacturing, but is applicable to substrate cleaning in other fields such as a photomask. Specifically, this apparatus transfers a wafer or a substrate such as a thin film structure manufactured on the wafer to a processing unit by a transfer mechanism, and generates pure water from a nozzle capable of generating a supersonic flow such as a Laval shape. Is a substrate cleaning apparatus which accelerates the cleaning liquid at a supersonic speed by compressed air and ejects the cleaning liquid to act on the substrate surface for cleaning.
【０００３】図６はすでに公知となっているの特許第29
59763号公報に示された「ウェーハ洗浄装置」の上視概略
図である。本装置は、装置略中央部に基板を搬入または
搬出する搬送ロボット１と、洗浄前の基板を収納する搬
入部２と洗浄後の基板を収納する搬出部３と、この搬入
部２および搬出部３と対向する片側に設けた基板反転ア
ライメント部４と、基板を洗浄する基板洗浄部５と、こ
の基板洗浄部５に対向する片側に設けた搬送ロボット１
の保持部１１を洗浄するための搬送ロボット洗浄部６を
備える。また、基板洗浄部５内に供給される純水、超純
水、薬液等の洗浄液を貯蔵する洗浄液タンク８１が収納
された洗浄液タンク部８を備えている。さらに、本装置
を所定の洗浄条件により動作させるために制御する制御
部９を備えている。[0003] FIG. 6 is a diagram of a well-known patent.
1 is a schematic top view of a “wafer cleaning apparatus” disclosed in Japanese Patent No. 59763. The present apparatus includes a transfer robot 1 for loading or unloading a substrate to or from a substantially central portion of the apparatus, a loading section 2 for storing a substrate before cleaning, a loading section 3 for storing a substrate after cleaning, the loading section 2 and a loading section. A substrate reversing alignment unit 4 provided on one side facing the substrate 3; a substrate cleaning unit 5 for cleaning the substrate; and a transfer robot 1 provided on one side facing the substrate cleaning unit 5
And a transfer robot cleaning unit 6 for cleaning the holding unit 11 of FIG. Further, a cleaning liquid tank section 8 containing a cleaning liquid tank 81 for storing a cleaning liquid such as pure water, ultrapure water, and a chemical solution supplied into the substrate cleaning section 5 is provided. Further, a control unit 9 for controlling the apparatus to operate under predetermined cleaning conditions is provided.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
洗浄装置およびその方法には、次に示すような課題があ
った。 課題1) クリーンルーム内には各種樹脂部品から有機系
ガスが放出される。この有機系ガスは基板表面に吸着し
基板表面を疎水性に変えてしまうので、従来の洗浄装置
およびその方法では洗浄効果が抑制される。 課題2) 従来の洗浄装置および洗浄方法では、洗浄液で
洗浄した後、基板を高速で回転させ乾燥させている。こ
の方法は、２−プロパノール蒸気を基板表面に供給し、
水分を２プロパノールに置換する方法に較べて、乾燥後
に洗浄液中の0.1μm以下の微粒子が基板上に残留しやす
い。 課題3) 従来の洗浄装置およびその方法では、洗浄液が
基板上を流れるため、基板の材料によっては洗浄後基板
が帯電し雰囲気中の微粒子を引き寄せる。 課題4) 洗浄後の基板帯電を除去するために放電式の静
電気除去装置を備えている従来洗浄装置があるが、この
放電式電気除去装置電極部から異物が発生し基板に付着
する。However, the conventional cleaning apparatus and method have the following problems. Problem 1) Organic gases are emitted from various resin parts into the clean room. This organic gas is adsorbed on the substrate surface and changes the surface of the substrate to hydrophobic, so that the cleaning effect of the conventional cleaning apparatus and method is suppressed. Problem 2) In the conventional cleaning apparatus and the conventional cleaning method, after cleaning with a cleaning liquid, the substrate is rotated at a high speed and dried. The method comprises providing 2-propanol vapor to a substrate surface,
Compared to the method of replacing water with 2-propanol, fine particles of 0.1 μm or less in the cleaning solution are more likely to remain on the substrate after drying. Problem 3) In the conventional cleaning apparatus and the conventional method, the cleaning liquid flows on the substrate, and therefore, depending on the material of the substrate, the substrate is charged after cleaning and attracts fine particles in the atmosphere. Problem 4) There is a conventional cleaning apparatus provided with a discharge-type static eliminator for removing the charged substrate after cleaning. However, foreign matter is generated from the electrode portion of the discharge-type electric eliminator and adheres to the substrate.
【０００５】[0005]
【課題を解決するための手段】本発明は上記の課題を解
決するために以下の手段を講ずる。課題1)を解決するた
めに、本発明では、洗浄液で洗浄する直前に有機系汚染
物を基板から除去する目的で、大気中で基板に照射する
紫外線照射部を備えている。特に、波長172nm±20nmの
紫外線照射するのが効果的である。課題2) 課題3）課題
4)を解決するため、本発明では洗浄後の残留した0.1μm
以下の微粒子を除去し、基板に貯まった電荷を除去する
目的で、大気中で基板に照射する紫外線照射部を備えて
いる。この紫外線照射による静電気除去方法は、異物の
発生が無いため、基板を汚染しない。特に波長172nm±2
0nmの紫外線が効果的である。The present invention employs the following means in order to solve the above-mentioned problems. In order to solve the problem 1), the present invention includes an ultraviolet irradiation unit that irradiates the substrate in the air for the purpose of removing organic contaminants from the substrate immediately before cleaning with a cleaning liquid. In particular, it is effective to irradiate ultraviolet rays having a wavelength of 172 nm ± 20 nm. Issue 2) Issue 3) Issue
In order to solve 4), in the present invention, 0.1 μm
In order to remove the following fine particles and remove the electric charge accumulated on the substrate, an ultraviolet irradiation unit for irradiating the substrate in the air is provided. This method of removing static electricity by irradiation of ultraviolet rays does not cause contamination and does not contaminate the substrate. Especially 172nm ± 2
0 nm UV light is effective.
【０００６】[0006]
【発明の実施の形態】次に、添付図面を参照して本発明
による基板洗浄装置およびその方法の実施の形態を詳細
に説明する。図１は本発明による基板洗浄装置の実施の
形態を示す上視概略図である。図１に示すように、本発
明による基板洗浄装置は、装置略中央部に基板を搬入ま
たは搬出する搬送ロボット１と、洗浄前の基板を収納す
る搬入部２と洗浄後の基板を収納する搬出部３と、この
搬入部２および搬出部３と対向する片側に設けた反転ア
ライメント部４と、基板を洗浄する基板洗浄部５と、こ
の基板洗浄部５に隣接する搬送ロボット１の保持部１１
を洗浄する搬送ロボット洗浄部６と、基板洗浄部５と対
向する片側に設けた紫外線照射部７を備えている。ま
た、この基板洗浄装置は、基板洗浄部５内に供給される
純水、超純水、薬液等の洗浄液を貯蔵する洗浄液タンク
８１が単数個または複数個設置された洗浄液タンク部８
を備えており、さらに、本装置を所定の洗浄条件により
動作させるために制御する制御部９を備えている。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a substrate cleaning apparatus according to the present invention; FIG. 1 is a schematic top view showing an embodiment of a substrate cleaning apparatus according to the present invention. As shown in FIG. 1, a substrate cleaning apparatus according to the present invention includes a transfer robot 1 for loading or unloading a substrate at a substantially central portion of the apparatus, a loading unit 2 for storing a substrate before cleaning, and an unloading unit for storing a substrate after cleaning. Unit 3, a reversal alignment unit 4 provided on one side facing the loading unit 2 and the unloading unit 3, a substrate cleaning unit 5 for cleaning a substrate, and a holding unit 11 of the transport robot 1 adjacent to the substrate cleaning unit 5.
And a UV irradiation unit 7 provided on one side facing the substrate cleaning unit 5. Further, the substrate cleaning apparatus includes a cleaning liquid tank unit 8 provided with a single or a plurality of cleaning liquid tanks 81 for storing a cleaning liquid such as pure water, ultrapure water, and a chemical solution supplied into the substrate cleaning unit 5.
And a control unit 9 for controlling the apparatus to operate under predetermined cleaning conditions.
【０００７】図２は図１に示した基板洗浄部５に処理基
板５１が装着された場合の拡大図であり、図３は図２の
A−A断面による説明図である。処理基板５１はスピンロ
ボット爪部５２１により端部を保持され、この状態でス
ピンロボット５２は回動することが可能である。処理基
板５１は、洗浄の際基板から周囲へ洗浄液が飛び散るの
を防ぐ排気カップ５３で覆われている。処理基板５１を
スピンロボット５２に装着することを考慮し、排気カッ
プ５３は上下移動可能であるように構成されている。排
気カップ５３近傍の超音速ノズル支持部５４１には、洗
浄液を圧縮気体により超音速に加速して噴出させること
が可能な超音速ノズル５４が取り付けられている。超音
速ノズル支持部５４１はその回転軸５４１１を中心に回
動する。また、圧縮気体を用いず洗浄液の圧力だけで洗
浄液を噴出させるノズル５５を単数個または複数個備え
ている。図３に示すように、洗浄の際には基板洗浄部５
に薬液の蒸気が充満しないように排気口５６より排気す
る。また、基板洗浄部に貯まる洗浄液は洗浄部排液口５
７から排液される。FIG. 2 is an enlarged view when a processing substrate 51 is mounted on the substrate cleaning section 5 shown in FIG. 1, and FIG.
It is explanatory drawing by AA cross section. The processing substrate 51 has its end held by the spin robot claw 521, and the spin robot 52 can rotate in this state. The processing substrate 51 is covered with an exhaust cup 53 that prevents the cleaning liquid from splashing from the substrate to the periphery during cleaning. In consideration of mounting the processing substrate 51 on the spin robot 52, the exhaust cup 53 is configured to be vertically movable. A supersonic nozzle 54 is attached to the supersonic nozzle support portion 541 near the exhaust cup 53, the supersonic nozzle 54 being capable of accelerating the cleaning liquid at supersonic speed by compressed gas and ejecting the cleaning liquid. The supersonic nozzle support 541 rotates about its rotation shaft 5411. Further, a single nozzle or a plurality of nozzles 55 for ejecting the cleaning liquid only by the pressure of the cleaning liquid without using the compressed gas are provided. As shown in FIG. 3, the substrate cleaning unit 5 is used for cleaning.
The gas is exhausted from the exhaust port 56 so as not to be filled with the vapor of the chemical solution. Further, the cleaning liquid stored in the substrate cleaning section is supplied to the cleaning section drain port 5.
Drained from 7.
【０００８】図４は、図１に示されている紫外線照射部
７のＢ−Ｂ断面による説明図である。処理基板７１は基
板保持ロボット７２により裏面を保持され、この状態で
基板保持ロボット７２は軸の上下方向に移動可能で、軸
を中心に回転または回動することが可能である。処理基
板７１の上部はランプ室７３になっていおり、処理基板
のある空間とは石英ガラス７３１で遮断されている。ラ
ンプ室７３中の雰囲気は窒素で置換することが可能とな
っている。ランプ室７３には波長172nm±20nmの紫外線
を発生する紫外線ランプ７３２が単数個または複数個備
えられている。紫外線ランプ７３２から発生した紫外線
を効率よく基板に照射するために、紫外線ランプ７３２
の処理基板に対向する側には反射板７３３が備えられて
いる。FIG. 4 is an explanatory view of the ultraviolet irradiation section 7 shown in FIG. The back side of the processing substrate 71 is held by the substrate holding robot 72. In this state, the substrate holding robot 72 can move in the vertical direction of the axis, and can rotate or rotate around the axis. An upper portion of the processing substrate 71 is a lamp chamber 73, and is separated from a space where the processing substrate is located by quartz glass 731. The atmosphere in the lamp chamber 73 can be replaced with nitrogen. The lamp chamber 73 is provided with one or a plurality of ultraviolet lamps 732 for generating ultraviolet light having a wavelength of 172 nm ± 20 nm. In order to efficiently irradiate the ultraviolet rays generated from the ultraviolet lamp 732 to the substrate, the ultraviolet lamp 732 is used.
A reflection plate 733 is provided on the side facing the processing substrate.
【０００９】次にこの装置を用いた基板洗浄方法につい
ての工程を具体的に説明する。 1)まず搬入部２に収納された洗浄前の基板を搬送ロボッ
ト１により取り出し、反転アライメント部４に装着す
る。 2)反転アライメント部４で基板の芯出し修正を行う。 3)芯出しされた基板は処理基板５１として搬送ロボット
１により基板洗浄部５内のスピンロボット５２に装着さ
れる。 4)排気カップ５３を上げ排気カップ５３で処理基板５１
を覆うようにし、この処理基板５１を装着したスピンロ
ボット５２を回転させる。 5)超音速ノズル支持部５４１の回動軸５４１１を回動さ
せ、超音速ノズル５４を処理基板５１上に移動させる。 6)処理基板５１上で超音速ノズル５４を作動させ、洗浄
液を超音速で処理基板５１表面に噴き付ける。 7)このとき均一に洗浄されるように回動軸５４１１を回
動させ、超音速ノズルを処理基板５１上で左右に振る。 8)超音速ノズル５４を用いた洗浄の前後にノズル５５を
用いた洗浄が加えられる場合がある。 9)最後に処理基板５１の回転数を上げ、遠心力で基板上
の洗浄液を飛散させ乾燥させる。 10)洗浄終了後の基板は搬送ロボット１により取り出さ
れ、搬出部３に収納される。Next, steps of a substrate cleaning method using this apparatus will be specifically described. 1) First, the substrate before cleaning stored in the carry-in section 2 is taken out by the transfer robot 1 and mounted on the reversal alignment section 4. 2) The center alignment of the substrate is corrected by the reversal alignment unit 4. 3) The centered substrate is mounted on the spin robot 52 in the substrate cleaning unit 5 by the transfer robot 1 as a processing substrate 51. 4) Raise the exhaust cup 53 and process the substrate 51 with the exhaust cup 53.
And the spin robot 52 on which the processing substrate 51 is mounted is rotated. 5) The rotating shaft 5411 of the supersonic nozzle support 541 is rotated to move the supersonic nozzle 54 onto the processing substrate 51. 6) The supersonic nozzle 54 is operated on the processing substrate 51, and the cleaning liquid is sprayed on the surface of the processing substrate 51 at a supersonic speed. 7) At this time, the rotating shaft 5411 is rotated so as to be uniformly washed, and the supersonic nozzle is swung right and left on the processing substrate 51. 8) Cleaning using the nozzle 55 may be added before and after cleaning using the supersonic nozzle 54. 9) Finally, the number of rotations of the processing substrate 51 is increased, and the cleaning liquid on the substrate is scattered by centrifugal force and dried. 10) The substrate after cleaning is taken out by the transfer robot 1 and stored in the carry-out section 3.
【００１０】また、基板表面だけでなく裏面も洗浄した
い場合は、次のような工程を行う。 1)まず、搬送ロボット洗浄部６で搬送ロボット１の保持
部１１を洗浄する。 2)洗浄した搬送ロボット１により表面洗浄後の基板を反
転アライメント部４に再び装着し、反転芯出しを行う。 3)反転芯出しされた基板を表面と同様に洗浄する。 4)洗浄後搬送ロボット１により取り出し搬出部３に収納
する。 なお、次の基板を洗浄する場合は、搬送ロボット洗浄部
６で搬送ロボット１の保持部１１を洗浄してから行うと
よい。If it is desired to clean not only the front surface but also the back surface of the substrate, the following steps are performed. 1) First, the holding unit 11 of the transfer robot 1 is cleaned by the transfer robot cleaning unit 6. 2) The substrate whose surface has been cleaned is mounted again on the reversal alignment unit 4 by the cleaned transfer robot 1 to perform reversal centering. 3) The inverted centered substrate is washed in the same manner as the surface. 4) After the cleaning, the transfer robot 1 takes out and stores it in the carry-out section 3. Note that when cleaning the next substrate, it is preferable to clean the holding unit 11 of the transfer robot 1 with the transfer robot cleaning unit 6.
【００１１】さらに、紫外線照射を伴う場合は、次のよ
うな工程を行う。 1)ランプ室７３中の雰囲気を窒素で置換する。 2)処理基板７１は搬送ロボット１により基板保持ロボッ
ト７２に装着される。 3)基板保持ロボット７２を上下方向に移動させ、処理基
板７１と紫外線ランプ７３２との距離を調整する。 4)紫外線ランプ７３２を点灯し基板に紫外線を照射す
る。紫外線の波長はあらかじめ効果の高い値に設定して
おく。例えば、波長172nm±20nmとする。 5)このとき紫外線が均一に照射するように基板と共に基
板保持ロボット７２を回転させる。 6)あらかじめ決められた時間を照射した後、紫外線ラン
プ７３２を消灯し、基板保持ロボット７２の回転を中止
する。 7)搬送ロボット１により基板７１を紫外線照射部７から
取り出す。なお、紫外線照射部には基板表面電位計を備
えているとよい。Further, when ultraviolet irradiation is involved, the following steps are performed. 1) The atmosphere in the lamp chamber 73 is replaced with nitrogen. 2) The processing substrate 71 is mounted on the substrate holding robot 72 by the transfer robot 1. 3) The substrate holding robot 72 is moved up and down to adjust the distance between the processing substrate 71 and the ultraviolet lamp 732. 4) Turn on the ultraviolet lamp 732 to irradiate the substrate with ultraviolet light. The wavelength of the ultraviolet light is set in advance to a high value. For example, the wavelength is 172 nm ± 20 nm. 5) At this time, the substrate holding robot 72 is rotated together with the substrate so that the ultraviolet rays are uniformly irradiated. 6) After irradiation for a predetermined time, the ultraviolet lamp 732 is turned off, and the rotation of the substrate holding robot 72 is stopped. 7) The substrate 71 is taken out of the ultraviolet irradiation section 7 by the transfer robot 1. Note that the ultraviolet irradiation unit may be provided with a substrate surface electrometer.
【００１２】次に、本発明の基板洗浄装置およびその方
法を適用し、基板洗浄を実施した実験結果について得ら
れたデータを基に説明する。図５には、EUVリソグラフ
ィマスク用の基板に本発明の洗浄装置およびその方法を
適用した場合の結果を示してある。横軸は微粒子径であ
り、縦軸は洗浄効率である。洗浄効率は次のように定義
される。 Ｎini：洗浄前に基板に付着している微粒子の個数 N：洗浄後に基板に付着している微粒子の個数 洗浄効率＝（Ｎini−Ｎ）／Nini×１００ 図５中＋印は、請求項７に示す方法で洗浄した結果であ
る。図５中◇印は、請求項８に示す方法で洗浄した結果
である。紫外線は洗浄液で洗浄する直前に基板に照射し
た。図５中●印は、請求項９に示す方法で洗浄した結果
である。紫外線は洗浄液で洗浄する直前直後時に照射し
た。Next, an explanation will be given based on data obtained on the results of an experiment in which the substrate cleaning apparatus and method of the present invention are applied and the substrate is cleaned. FIG. 5 shows a result when the cleaning apparatus and the method of the present invention are applied to a substrate for an EUV lithography mask. The horizontal axis is the particle diameter, and the vertical axis is the cleaning efficiency. The cleaning efficiency is defined as follows. Nini: the number of fine particles adhering to the substrate before cleaning N: the number of fine particles adhering to the substrate after cleaning Cleaning efficiency = (Nini−N) / Nini × 100 In FIG. This is the result of washing by the method shown. In FIG. 5, the symbol “◇” indicates the result of cleaning by the method according to claim 8. Ultraviolet rays were applied to the substrate immediately before cleaning with the cleaning liquid. In FIG. 5, the marks ● indicate the results of cleaning by the method according to claim 9. Ultraviolet rays were irradiated immediately before and after washing with the washing solution.
【００１３】図５からわかるように、請求項９に係る方
法で、洗浄液で洗浄する直前に紫外線を基板に照射する
方法（◇印）では、150ｎｍ以上の微粒子が前記の方法
（＋印）に比べ高い除去効率を得られている。しかし、
微粒子径70nmで洗浄効率が負の値となっている。これは
洗浄後径70nmの微粒子が増加したことを表している。図
５からわかるように、請求項９に係る方法で洗浄液で洗
浄する直前に紫外線を基板に照射する方法（●印）で
は、150ｎｍ以上の微粒子が前記の方法（＋印）に比べ
高い除去効率を得られている。しかも、洗浄後径70nmの
微粒子が増加していない。なお、この発明の実施形態で
は、フオトマスク製作用のガラス、Si等の基板またはそ
の上に作製され構成された薄膜構造物について述べてき
たが、その他の基板例えばULSI、液晶、GMRヘッド、ハ
ードディスク作製用の基板及びそれらの上に作製された
薄膜構造物にも適用可能なことはもちろんである。As can be seen from FIG. 5, in the method according to the ninth aspect, in the method of irradiating the substrate with ultraviolet rays immediately before cleaning with the cleaning liquid (marked with ◇), fine particles having a size of 150 nm or more are compared with the above method (marked with +). Higher removal efficiency is obtained. But,
The cleaning efficiency is a negative value at the particle diameter of 70 nm. This indicates that the fine particles having a diameter of 70 nm increased after washing. As can be seen from FIG. 5, in the method of irradiating the substrate with ultraviolet rays immediately before cleaning with the cleaning liquid according to the ninth aspect (marked with ●), the removal efficiency of fine particles having a size of 150 nm or more is higher than that of the above method (+ symbol). Has been obtained. Moreover, the number of fine particles having a diameter of 70 nm after washing has not increased. In the embodiment of the present invention, a glass for producing a photomask, a substrate made of Si or the like or a thin film structure formed and formed thereon has been described, but other substrates such as a ULSI, a liquid crystal, a GMR head, and a hard disk are manufactured. Of course, the present invention can also be applied to substrates for thin films and thin film structures formed thereon.
【００１４】[0014]
【発明の効果】このように、本発明による基板洗浄装置
および基板洗浄方法によれば、基板またはその上に製作
され構成された薄膜構造物の洗浄においては、紫外線照
射により静電気や微粒子が除去され、基板の汚染を効果
的に抑制することができる。また、紫外線照射により有
機系ガスの放出が押さえられるので、基板洗浄の効果が
高くなる。そして、窒素等不活性ガスの圧縮気体を使用
することで、自然酸化等化学変化を起こす心配がなくな
る。As described above, according to the substrate cleaning apparatus and the substrate cleaning method of the present invention, in cleaning the substrate or the thin film structure manufactured and formed on the substrate, static electricity and fine particles are removed by ultraviolet irradiation. In addition, contamination of the substrate can be effectively suppressed. Further, since the emission of the organic gas is suppressed by the irradiation of the ultraviolet rays, the effect of cleaning the substrate is enhanced. By using a compressed gas of an inert gas such as nitrogen, there is no need to worry about chemical changes such as natural oxidation.
【図１】本発明による基板洗浄装置の実施の形態を示す
上視概略図。FIG. 1 is a schematic top view showing an embodiment of a substrate cleaning apparatus according to the present invention.
【図２】本発明による図１に示した基板洗浄部５に、処
理基板５１が装着された場合の拡大図。FIG. 2 is an enlarged view when a processing substrate 51 is mounted on the substrate cleaning unit 5 shown in FIG. 1 according to the present invention.
【図３】本発明による図２に示したA−A断面による説明
図。FIG. 3 is an explanatory view according to the AA cross section shown in FIG. 2 according to the present invention;
【図４】本発明による図１に示されている紫外線照射部
７のＢ−Ｂ断面による説明図。FIG. 4 is an explanatory view of the ultraviolet irradiation section 7 shown in FIG. 1 according to the present invention, taken along the line BB.
【図５】本発明による基板洗浄装置および基板洗浄方法
を、EUVリソグラフィマスク用の基板の洗浄に適用した
場合の結果。FIG. 5 shows a result when the substrate cleaning apparatus and the substrate cleaning method according to the present invention are applied to cleaning of a substrate for an EUV lithography mask.
【図６】従来の基板洗浄装置の一例で、特許第2959763
号公報に示された「ウェーハ洗浄装置」の上視概略図。FIG. 6 shows an example of a conventional substrate cleaning apparatus.
FIG.
１ 搬送ロボット１ ２ 搬入部 ３ 搬出部 ４ 反転アライメント部 ５ 基板洗浄部 ５１ 処理基板 ５２ スピンロボット ５３ 排気カップ ５４ 超音速ノズル ７ 紫外線照射部 ７１ 処理基板 ７２ 基板保持ロボット ７３ ランプ室 ８ 洗浄液タンク部 DESCRIPTION OF SYMBOLS 1 Transport robot 1 2 Carry-in part 3 Unloading part 4 Inversion alignment part 5 Substrate washing part 51 Processing substrate 52 Spin robot 53 Exhaust cup 54 Supersonic nozzle 7 Ultraviolet irradiation part 71 Processing substrate 72 Substrate holding robot 73 Lamp room 8 Cleaning liquid tank part
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 21/304 ６４５ Ｈ０１Ｌ 21/304 ６４５Ｄ (72)発明者 平野 直也 東京都調布市柴崎２丁目１番地３ 島田理 化工業株式会社内 (72)発明者 星野 栄一 神奈川県川崎市中原区上小田中４丁目１番 １号 富士通株式会社内 (72)発明者 鉾 宏真 神奈川県川崎市中原区上小田中４丁目１番 １号 富士通株式会社内 (72)発明者 小川 太郎 東京都国分寺市東恋ヶ窪一丁目280番地 株式会社日立製作所中央研究所内 Ｆターム(参考） 2H095 BB20 BB30 3B201 AA03 AB23 AB27 AB34 BB44 BB88 BB90 BB92 BB93 BC01 CC13 CC21 CD33 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/304 645 H01L 21/304 645D (72) Inventor Naoya Hirano 2-1-1 Shibasaki, Chofu-shi, Tokyo Shimada Rika Kogyo Co., Ltd. (72) Inventor Eiichi Hoshino 4-1-1, Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Inside Fujitsu Co., Ltd. (72) Inventor Hiromasa Hoko 4-chome Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture No. 1 Fujitsu Limited (72) Inventor Taro Ogawa 1-280 Higashi Koigabo, Kokubunji-shi, Tokyo F-term in Central Research Laboratory, Hitachi, Ltd. 2H095 BB20 BB30 3B201 AA03 AB23 AB27 AB34 BB44 BB88 BB90 BB92 BB93 BC01 CC13 CC21 CD33
Claims (10)
この被洗浄物を基板とし、超音速流を発生する超音速ノ
ズルから、洗浄液を圧縮気体により超音速に加速して噴
出させて、この基板面に作用させ洗浄する基板洗浄部を
備え、かつ、洗浄液による基板洗浄の直前時、直後時ま
たは直前直後時に紫外線を大気中で基板に照射する紫外
線照射部を備えたことを特徴とする基板洗浄装置。1. A cleaning apparatus for cleaning an object to be cleaned,
The substrate to be cleaned is provided with a substrate cleaning unit that accelerates the cleaning liquid to a supersonic speed with a compressed gas and jets the cleaning liquid from a supersonic nozzle that generates a supersonic flow, acts on the substrate surface, and performs cleaning. A substrate cleaning apparatus, comprising: an ultraviolet irradiation unit that irradiates ultraviolet light to a substrate in the atmosphere immediately before, immediately after, or immediately before or after cleaning a substrate with a cleaning liquid.
記基板は、フオトマスク製作用基板またはこの基板上に
構成された薄膜構造物を基板としたことを特徴とする基
板洗浄装置。2. The substrate cleaning apparatus according to claim 1, wherein said substrate is a photomask working substrate or a thin film structure formed on said substrate.
記超音速ノズルは、ラバール形状等超音速流を発生する
超音速ノズルとしたことを特徴とする基板洗浄装置。3. The substrate cleaning apparatus according to claim 1, wherein said supersonic nozzle is a supersonic nozzle that generates a supersonic flow such as a Laval shape.
記洗浄液は純水、超純水または薬液としたことを特徴と
する基板洗浄装置。4. A substrate cleaning apparatus according to claim 1, wherein said cleaning liquid is pure water, ultrapure water, or a chemical solution.
前記圧縮気体は、窒素等の不活性ガスとしたことを特徴
とする基板洗浄装置。5. The substrate cleaning apparatus according to claim 1, wherein
The substrate cleaning apparatus according to claim 1, wherein the compressed gas is an inert gas such as nitrogen.
前記紫外線は、その波長を172nm±20nmとしたことを特
徴とする基板洗浄装置。6. The substrate cleaning apparatus according to claim 1, wherein
A substrate cleaning apparatus, wherein the ultraviolet light has a wavelength of 172 nm ± 20 nm.
前記基板は搬送機構を有する搬送ロボットにより前記基
板洗浄部へ搬送されウェット洗浄処理される工程を有す
ることを特徴とする基板洗浄方法。7. The substrate cleaning apparatus according to claim 1, wherein
A substrate cleaning method, comprising a step of transporting the substrate to a substrate cleaning section by a transport robot having a transport mechanism and performing a wet cleaning process.
前記基板は、搬送機構を有する前記搬送ロボットにより
前記紫外線照射部へ搬送されて紫外線照射処理される工
程を有し、その次の工程として、この基板は搬送機構を
有するこの搬送ロボットにより前記基板洗浄部へ搬送さ
れウェット洗浄処理される工程を有することを特徴とす
る基板洗浄方法。8. The apparatus for cleaning a substrate according to claim 1, wherein
The substrate has a step of being transferred to the ultraviolet irradiation unit by the transfer robot having a transfer mechanism and subjected to ultraviolet irradiation processing, and as a next step, the substrate is cleaned by the transfer robot having a transfer mechanism. A step of transporting the substrate to a unit and performing a wet cleaning process.
前記基板は、搬送機構を有する前記搬送ロボットにより
前記紫外線照射部へ搬送されて紫外線照射処理される工
程を有し、その次の工程として、この基板は搬送機構を
有するこの搬送ロボットにより前記基板洗浄部へ搬送さ
れウェット洗浄処理される工程を有し、そして再び前記
基板は搬送機構を有する前記搬送ロボットにより前記紫
外線照射部へ搬送されて再び紫外線照射処理される工程
を有することを特徴とする基板洗浄方法。9. The substrate cleaning apparatus according to claim 1, wherein
The substrate has a step of being transferred to the ultraviolet irradiation unit by the transfer robot having a transfer mechanism and subjected to ultraviolet irradiation processing, and as a next step, the substrate is cleaned by the transfer robot having a transfer mechanism. A substrate having a step of being transported to a unit and being subjected to wet cleaning processing, and again having a step of being transported to the ultraviolet irradiation unit by the transport robot having a transport mechanism and subjected to ultraviolet irradiation processing again. Cleaning method.
て、前記紫外線照射部は基板表面電位計を備えたことを
特徴とする基板洗浄装置。10. The substrate cleaning apparatus according to claim 1, wherein the ultraviolet irradiation unit includes a substrate surface electrometer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000109852A JP3426560B2 (en) | 2000-04-11 | 2000-04-11 | Substrate cleaning method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000109852A JP3426560B2 (en) | 2000-04-11 | 2000-04-11 | Substrate cleaning method |
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| Publication Number | Publication Date |
|---|---|
| JP2001293443A true JP2001293443A (en) | 2001-10-23 |
| JP3426560B2 JP3426560B2 (en) | 2003-07-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000109852A Expired - Fee Related JP3426560B2 (en) | 2000-04-11 | 2000-04-11 | Substrate cleaning method |
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| Country | Link |
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| JP (1) | JP3426560B2 (en) |
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