JP2001291910A - Magnetoresistance effect type thin-film magnetic head and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high sensitive thin-film magnetic head which is superior in reproducing performance by restraining generation of shunt of a signal current, for reproducing in the reproducing head of narrow gap length for reproducing a recording signal of short wavelength which corresponds to high recording density, and to provide a manufacturing method of the head. SOLUTION: An electrode lead layer, composed of tantalum having a structure of cubic system, is laminated on a film wherein tantalum nitride whose nitride content is 33-40% is formed as a seed layer, the electrode lead layer of low resistance is grown and treated thermally, and resistance value of the electrode lead layer is reduced further. The seed layer is eliminated completely by etching. consequently, a reproducing signal current flowing in the electrode lead layer is not shunted, and reproducing sensitivity can be improved. Etching rates of the electrode lead layer and the seed layer can be made almost identical, and damages to a GMR element which is to be caused by etching are eliminated, and the yield for the thin-film magnetic head can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is applied to a device for performing high-density recording / reproduction on a magnetic recording medium such as a magnetic disk device (HDD device), and in particular, grows a low-resistance electrode lead layer. The present invention relates to a magnetoresistive thin-film magnetic head in which a seed layer is formed of an optimum material to suppress a divergence of a reproduction current and improve reproduction sensitivity, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, magnetic disk devices (HDD devices)
In recording on magnetic recording media such as, there is an increasing need to improve processing speed and increase the recording capacity. In addition, miniaturization of the thin film magnetic head itself has been increasingly advanced.

Hereinafter, a conventional thin film magnetic head will be described with reference to the drawings.

FIGS. 49 and 50 are views showing a conventional thin-film magnetic head. FIG. 49 is a schematic perspective view, and FIG. 50 is a front view of the thin-film magnetic head viewed from a head sliding surface side facing a magnetic recording medium. It is a schematic diagram.

For example, many thin-film magnetic heads used for recording and reproducing signals on a magnetic recording medium in a magnetic disk drive are so-called MR (GMR) inductive composite heads as shown in FIG.

Referring to FIGS. 49 and 50, permalloy,
On the lower shield layer 491 formed of a soft magnetic material such as a Co-based amorphous magnetic film or a Fe-based alloy magnetic film,
A lower gap insulating layer 492 is formed using an insulating material such as l ₂ O ₃ , AlN or SiO _2, and a magnetoresistive element (MR element or GMR element; hereinafter G)
493 are laminated, and the GMR element 493
A vertical bias layer 494 is formed of a material such as a CoPt alloy on the side of the substrate. An electrode lead layer 495 is formed on the upper surface of the vertical bias layer 494 and the upper surface of the GMR element 493 using a material such as tantalum.

Here, in order to improve the reliability of the thin-film magnetic head, the electrode lead layer is required to have low resistance. When tantalum is used for the electrode lead layer, as means for forming low-resistance tantalum, for example, Japanese Patent Application Laid-Open No. 5-25824
7, and a seed layer having a cubic structure such as chromium (Cr) and tungsten (W) or a nitrogen concentration of 7 to 13 atm as disclosed in JP-A-5-289091.
% Or 33 atm% or more electrode structures using tantalum nitride seed layers have been devised. As a method for obtaining a low-resistance tantalum wiring or electrode, the film quality of tantalum nitride is crystalline, the structure is a hexagonal lattice, and its nitrogen concentration and crystal orientation are (110) when x = 1 and x = 110. 0.8
Japanese Patent Application Laid-Open No. 8-325721 discloses that at least one of a group consisting of (100) and x = 0.43 and (111) is included. It is described as data that a specific resistance value of about 20 μΩcm at Å (30 nm) is obtained.

After the electrode lead layer is formed, patterning of the electrode lead layer is performed.
For example, Proceedings of the 22nd Annual Meeting of the Japan Society of Applied Magnetics (p.
79, 1998), in "Electrode Structure of Electrode Overlap Spin Valve Head and Electrode Processing by RIE", a method of processing an electrode lead layer using reactive ion etching (hereinafter referred to as RIE) is reported. .

After the patterning of the electrode lead layer, on the electrode lead layer 495 and the exposed portion of the GMR element 493,
The upper gap insulating layer 496 is formed using the same insulating material as the lower gap insulating layer 492. Further, an upper shield layer (also referred to as a common shield layer) 497 is formed on the upper gap insulating layer 496 using the same soft magnetic material as the lower shield layer 491, and a magnetoresistive thin film for reproduction is formed. The magnetic head 490 is configured.

Next, a recording gap layer 498 is formed on the upper surface of the upper shield layer 497 using the same insulating material as the lower gap insulating layer 492, and the recording gap layer 498 faces the upper shield layer 497 via the recording gap layer 498. In addition, the upper magnetic pole 499 is formed using a soft magnetic material that is in contact with the upper shield layer 497 at another portion, and the upper magnetic shield 497 and the portion where the upper magnetic pole 499 is opposed via the recording gap layer 498. A winding coil 501 insulated from the upper shield layer 497 and the upper magnetic pole 499 via an insulating material (not shown) is provided between the upper magnetic pole 499 and a portion where the upper magnetic pole 499 is in contact with the upper shield layer 497. Of the inductive thin-film magnetic head section 500 for use. Here, the upper shield layer 4
Reference numeral 97 has a function having both a shielding function of the magnetoresistive thin film magnetic head unit 490 for reproduction and a lower magnetic pole function of the inductive thin film magnetic head unit 500 for recording.

When a recording current is supplied to the winding coil 501, a recording magnetic field is generated in the upper magnetic pole 499 and the upper shield layer 497 of the recording induction type thin-film magnetic head unit 500, and the recording magnetic field is opposed via the recording gap layer 498. Upper magnetic pole 4
Leakage magnetic flux is generated between 99 and the upper shield layer 497, and a recording signal is recorded on the magnetic recording medium. Further, the magnetic field of the signal recorded on the magnetic recording medium on which the signal is recorded is reproduced by the reproducing magnetoresistive thin film magnetic head 490,
A reproduction signal corresponding to a resistance change by the MR element 493 is detected from a terminal of the electrode lead layer 495.

[0012]

However, in the above-mentioned conventional magnetoresistive thin-film magnetic head, as a material used as an electrode lead layer, tantalum having a cubic structure (hereinafter referred to as α-tantalum) is used. Used as a seed layer for growing α-tantalum,
Materials such as Cr or W have been used. Since Cr is difficult to be etched by RIE, the seed layer formed of Cr remains, so that the current of the electrode lead layer at the time of reproduction is shunted to the seed layer, which lowers the reproduction sensitivity of the thin-film magnetic head. There were challenges. Also, as a seed layer, W
When the electrode lead layer and the seed layer are etched by RIE, the etching rates of α-tantalum as the electrode lead layer and W as the seed layer are different from each other. The variation in the depth of the etching caused by the variation in the film thickness of each W causes damage to the GMR element and variations in the dimensions between the electrode lead layers that determine the reproduction track width. There was a problem that the yield was reduced.

In an electrode structure using a tantalum nitride having a nitrogen content of 7 to 13 atm% or 33 atm% or more as a base, the resistance is higher than that of a structure using Cr as a seed layer. However, there is a problem that the adhesion strength that can withstand the processing in the thin-film magnetic head cannot be obtained, and there is a problem that a difference in an etching rate between tantalum nitride and tantalum occurs, and the yield of the thin-film magnetic head decreases.

The structure is a hexagonal lattice, and its nitrogen concentration and crystal orientation are (110) when x = 1, (100) when x = 0.8, and (111) when x = 0.43. Forming tantalum nitride containing at least one of the groups to a thickness of 300 angstroms (30 nm) such that the specific resistance becomes about 20 μΩcm is required to reduce the thickness of the tantalum nitride to further miniaturize the thin film magnetic head. On the other hand, there is a problem that the specific resistance increases by about 10% to 20% when the film thickness is reduced.

According to the present invention, there is provided a thin film formed of a conductive material capable of etching an electrode lead layer at a substantially same etching rate as that of a main carrier layer by a reactive gas which can be etched by RIE with the main carrier layer. By performing a heat treatment at a temperature of 200 ° C. or more for 1 hour or more, a low-resistance tantalum can be formed, the seed layer can be completely removed by RIE, and the read sensitivity is good. Accordingly, it is an object of the present invention to provide a magnetoresistive thin film magnetic head having a high yield and a method for manufacturing the same.

[0016]

To achieve this object, a magnetoresistive thin-film magnetic head according to the present invention has a magnetoresistive element and is provided in electrical contact with the magnetoresistive element. A magnetoresistive thin-film magnetic head having an electrode lead layer, comprising: a seed layer formed of tantalum nitride; and a main carrier layer formed of cubic tantalum. Has a nitrogen content in the range of 33% to 40% (atm%), and after the electrode lead layer is formed, a heat treatment at a processing temperature of 200 ° C. or more and a processing time of 1 hour or more is applied.

According to this structure, by applying a heat treatment, the resistance value of the main carrier layer grown on the low-resistance α-tantalum is further reduced to form a very low-resistance main carrier layer. Since the seed layer can be completely removed by RIE using a halogen-containing gas, the reproduction current does not shunt, the reproduction sensitivity can be improved, and the reproduction track width can be formed with high precision. In addition, it is possible to maintain the adhesion strength of the seed layer and make the etching rate substantially the same as that of the main carrier layer, thereby obtaining the effect of improving the yield of the thin-film magnetic head. it can.

Further, a magnetoresistive thin film magnetic head according to the present invention has a magnetoresistive element, and has an electrode lead layer provided in electrical contact with the magnetoresistive element. The magnetic head has an electrode lead layer composed of a seed layer formed of tantalum nitride electrically connected to the magnetoresistive element through ruthenium, and a main carrier layer formed of cubic tantalum. The nitrogen content of the seed layer is set to 33% or more (atm%), and after forming the electrode lead layer, the processing temperature is set to 200 ° C.
As described above, the heat treatment is performed for one hour or more.

According to this structure, by applying a heat treatment, the resistance value of the main carrier layer grown on low-resistance α-tantalum is further reduced to form a very low-resistance main carrier layer. The seed layer can be completely removed with an ion-etchable gas, the generation of a shunt of the reproduction current can be suppressed, the reproduction sensitivity can be improved, and the reproduction track width can be formed with high precision.
By forming a film on the R element, the GMR element is not damaged by etching of the main carrier layer and the seed layer, and the characteristics of the GMR element after the etching can be maintained. Can be obtained.

Further, the magnetoresistive thin-film magnetic head of the present invention has an antireflection layer having a function of preventing reflection of light for exposure on the electrode lead layer, and the antireflection layer comprises a main carrier. The layer and the seed layer are formed of a material that can be removed by a reactive gas capable of performing reactive ion etching. Further, the magnetoresistive thin film magnetic head of the present invention has a configuration in which the material of the antireflection layer is tantalum nitride or titanium nitride.

According to this structure, by applying a heat treatment, the resistance value of the main carrier layer grown on low-resistance α-tantalum is further reduced to form a very low-resistance main carrier layer. The seed layer can be completely removed by etching using an etching gas containing a halogen gas, no shunt of the reproduction current occurs, the reproduction sensitivity can be improved, and the formation of the main carrier layer and the seed layer can be achieved. In the anti-reflection layer to suppress the reflection of light,
Since the resist can be accurately patterned, the main carrier layer and the seed layer can be accurately patterned, and the effect that the reproduction track width can be accurately formed can be obtained.

In the method of manufacturing a thin film magnetic head according to the present invention, a step of forming tantalum nitride having a nitrogen content of 33% to 40% (atm%) on a magnetoresistive element portion as a seed layer; Forming a tantalum film on the seed layer as a main carrier layer, and removing a part of the main carrier layer and the seed layer so that a part of the upper surface of the magnetoresistive element is exposed. , Processing temperature 200 ℃ or more,
A treatment time of one hour or more.

According to this method, a main carrier layer composed of low-resistance α-tantalum is grown, and is further subjected to a heat treatment to reduce the resistance value of the main carrier layer.
When removing the stacked seed layer and main carrier layer by RIE using an etching gas containing halogen,
Since the seed layer is completely removed and the seed layer can be prevented from remaining on the GMR element portion, no shunt occurs in the read current, so that the read sensitivity is good and the dimensional accuracy of the read track width is good. A magnetoresistive thin-film magnetic head with good quality can be manufactured. Further, the nitrogen content of tantalum nitride used as a seed layer is set to 33% to 40%.
(Atm%), it is possible to make the etching rates of the seed layer and the electrode lead layer substantially the same,
The GMR element is not damaged by the etching, the adhesion strength of the seed layer can be maintained, and a magnetoresistive thin film magnetic head having a high yield can be manufactured.

In the method of manufacturing a thin film magnetic head according to the present invention, as a seed layer, tantalum nitride having a nitrogen content of 30% to 40% (atm%) is formed so as to be in contact with the magnetoresistive element. And the main carrier layer
A step of forming tantalum on the seed layer, and a step of forming tantalum nitride or titanium nitride on the main carrier layer as an antireflection layer for preventing reflection of light for exposure,
Removing a part of the antireflection film, the main carrier layer and the seed layer so that a part of the upper surface of the magnetoresistive element is exposed, and performing a heat treatment at a processing temperature of 200 ° C. or more and a processing time of 1 hour or more. And a process.

According to this method, the photoresist used for patterning the main carrier layer and the seed layer can be formed in a good size and shape by preventing reflection at the time of exposure by the antireflection layer. The seed layer can be formed with high precision, and therefore, the reproduction track width can be formed with high precision.Also, a low resistance α-tantalum main carrier layer is grown by the seed layer made of tantalum nitride. Further, by performing heat treatment, the resistance value of the main carrier layer is further reduced, and the GM
Since the seed layer can be prevented from remaining on the R element portion, no shunt occurs in the read current, high read sensitivity is obtained, and the seed layer is 33% or more (atm%).
By depositing tantalum nitride having a nitrogen content of about 3%, the etching rate of the seed layer and the main carrier layer can be made substantially the same, so that the GMR element is not damaged by etching and the adhesion strength of the seed layer is reduced. Thus, a magnetoresistive thin film magnetic head having a high yield can be manufactured.

In the method of manufacturing a thin-film magnetic head according to the present invention, a ruthenium film is formed so as to be in contact with the upper surface of the magnetoresistive element portion, and a 33% as a seed layer is formed so as to be in contact with the upper surface of ruthenium. (Atm%) forming a tantalum nitride film having a nitrogen content of not less than (atm%), forming a tantalum film on a seed layer as a main carrier layer, and exposing a part of the upper surface of ruthenium. Removing a part of the main carrier layer and the seed layer using a gas containing halogen, and using a gas containing at least oxygen so as to expose a part of the upper surface of the magnetoresistive effect element. A part of the process and a processing temperature 2
Performing a heat treatment at a temperature of 00 ° C. or more and a treatment time of 1 hour or more. Further, the method of manufacturing a thin film magnetic head of the present invention includes a step of forming tantalum nitride or titanium nitride on a main carrier layer as an antireflection film for preventing reflection of light for exposure; Removing a part of the antireflection film, the main carrier layer, and the seed layer by a reactive ion etching method using a gas containing halogen so that a part thereof is exposed.

According to this method, when a part of the main carrier layer and the seed layer formed on the ruthenium formed on the cap layer constituting the GMR element is etched using a gas containing halogen. The cap layer on the top of the GMR element is not etched, and the cap layer is not etched even when ruthenium is etched with a gas containing at least oxygen.
As a result, the GMR element is not damaged by the etching, and the etching can be performed while maintaining the characteristics of the GMR element. Therefore, a magnetoresistive thin film magnetic head having excellent reproduction sensitivity can be manufactured. In addition, a low-resistance α-tantalum main carrier layer is grown by the seed layer made of tantalum nitride, and further subjected to a heat treatment to lower the resistance value of the main carrier layer and to increase the upper surface of the GMR element. Since a seed layer can be prevented from remaining in the magnetic head, a shunt does not occur in the read current, so that a high read sensitivity can be obtained, and a magnetoresistive thin film magnetic head having good read track width accuracy can be manufactured. be able to.

[0028]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention has a magnetoresistive effect element, and has an electrode lead layer provided in electrical contact with the magnetoresistive effect element. A thin-film magnetic head having an electrode lead layer composed of a seed layer formed of tantalum nitride and a main carrier layer formed of cubic tantalum, wherein the nitrogen content of the seed layer is 33% to 40%. % (Atm%), and after forming the electrode lead layer, the processing temperature is 200 ° C.
As described above, the heat treatment is performed for one hour or more.
The main carrier layer grows into low resistance α-tantalum,
By applying heat treatment, the resistance value of the main carrier layer is further reduced to form a very low-resistance main carrier layer, and RI using a gas containing halogen such as SF6 is used.
By E, since the seed layer can be completely removed, no shunt of the reproduction current occurs, and the reproduction sensitivity can be improved.
Also, the reproduction track width can be accurately formed,
Furthermore, since the adhesion rate of the seed layer can be maintained and the etching rate can be set to substantially the same value as that of the main carrier layer, the GMR element is not damaged by etching, and the yield of the thin-film magnetic head can be improved. It has the action of:

[0029] The invention described in claim 2 of the present invention provides:
In a magnetoresistive thin film magnetic head having a magnetoresistive element and having an electrode lead layer provided in electrical contact with the magnetoresistive element, the magnetoresistive element is electrically connected to the magnetoresistive element via ruthenium. An electrode lead layer composed of a seed layer formed of tantalum nitride and a main carrier layer formed of cubic tantalum, and the nitrogen content of the seed layer is in the range of 33% or more (atm%). age,
After the electrode lead layer is formed, heat treatment is performed at a processing temperature of 200 ° C. or more and a processing time of 1 hour or more. The main carrier layer is grown into low-resistance α-tantalum by the tantalum nitride seed layer. Further, by applying a heat treatment, the resistance value of the main carrier layer is further reduced, and a very low-resistance main carrier layer is formed.
Since the seed layer can be completely removed by RIE using a halogen-containing gas such as F6, the reproduction current does not shunt, the reproduction sensitivity can be improved, and the reproduction track width can be accurately formed. Further, by forming ruthenium on the GMR element, the GMR element is not damaged due to the etching of the main carrier layer and the seed layer, and the characteristics of the GMR element after etching can be maintained. Therefore, the yield of the magnetoresistive thin film magnetic head can be improved.

Further, the invention according to claim 3 of the present invention provides
An anti-reflection layer having a function of preventing reflection of light for exposure is provided on the electrode lead layer, and the anti-reflection layer can be removed by a reactive gas capable of reactive ion etching of the main carrier layer and the seed layer. The invention according to claim 4 of the present invention is characterized in that the material of the antireflection layer is tantalum nitride or titanium nitride, By the tantalum nitride seed layer, the main carrier layer grows into low-resistance α-tantalum, and further subjected to heat treatment to further reduce the resistance value of the main carrier layer, thereby forming a very low-resistance main carrier layer. Since the seed layer can be completely removed by RIE using a halogen-containing gas such as SF6 formed, a shunt of the reproduction current does not occur, and the reproduction sensitivity can be improved. Raw track width can be accurately formed, further, suppressing the reflection of light by the reflection preventing layer, since it is the patterning of a good resist accuracy,
It has an effect that accurate patterning of the main carrier layer and the seed layer can be performed, and a highly accurate reproduction track width can be obtained.

The invention according to claim 5 of the present invention provides:
Forming a tantalum nitride having a nitrogen content of 33% to 40% (atm%) on the magnetoresistive element portion as a seed layer;
A step of forming a tantalum film, a step of removing a part of the main carrier layer and the seed layer so that a part of an upper surface of the magnetoresistive element is exposed, a processing temperature of 200 ° C. or more, and a processing time of 1 hour or more A step of performing a heat treatment of the main carrier layer composed of low-resistance α-tantalum, and further performing a heat treatment to further increase the resistance value of the main carrier layer. Lower, and
When removing the stacked seed layer and main carrier layer by RIE using an etching gas containing halogen,
Since the seed layer is completely removed and the seed layer can be prevented from remaining on the GMR element portion, no shunt occurs in the reproduction current, so that the reproduction sensitivity is good and the dimensional accuracy of the reproduction track width is good. A magnetoresistive thin-film magnetic head with good quality can be manufactured. Further, the nitrogen content of tantalum nitride as a seed layer is set to 33% to 40% (atm
%), The etching rates of the seed layer and the main carrier layer can be made substantially the same value, the GMR element is not damaged by the etching, the adhesion strength of the seed layer can be maintained, and the yield can be reduced. This has the effect that a high magnetoresistance effect type thin film magnetic head can be manufactured.

The invention according to claim 6 of the present invention provides:
Forming a tantalum nitride having a nitrogen content of 33% to 40% (atm%) as a seed layer so as to be in contact with the magnetoresistive element; and forming tantalum on the seed layer as a main carrier layer on the seed layer. A step of forming tantalum nitride or titanium nitride on the main carrier layer as an antireflection layer for preventing reflection of light for exposure, and a part of the upper surface of the magnetoresistive element portion. A step of removing a part of the antireflection film, the main carrier layer, and the seed layer so as to be exposed, and a step of performing a heat treatment at a processing temperature of 200 ° C. or more and a processing time of 1 hour or more. Yes, by preventing reflection of light at the time of exposure by the anti-reflection layer, a photoresist for patterning the main carrier layer and the seed layer can be formed in good dimensions and shape. The seed layer can be formed with high precision, and therefore, the reproduction track width can be formed with high precision.Also, a low resistance α-tantalum main carrier layer is grown by the seed layer made of tantalum nitride. ,
Furthermore, by performing the heat treatment, the resistance value of the main carrier layer can be further reduced and the seed layer can be prevented from remaining on the GMR element portion. A magnetoresistive thin-film magnetic head with a high yield can be obtained with high read sensitivity, no damage to the GMR element due to etching of the main carrier layer and the seed layer, and the ability to maintain the adhesion strength of the seed layer. Has the effect of being able to

Further, the invention according to claim 7 of the present invention provides:
Forming a ruthenium film so as to be in contact with the upper surface of the magnetoresistive effect element portion, and forming tantalum nitride having a nitrogen content of 33% (atm%) or more as a seed layer so as to be in contact with the upper surface of the ruthenium And forming a tantalum film on the seed layer as a main carrier layer,
Removing a part of the main carrier layer and the seed layer by using a gas containing halogen so that a part of the upper surface of ruthenium is exposed; and Removing a part of ruthenium by using a gas containing at least oxygen, and a processing temperature of 200 ° C.
As described above, there is provided a step of performing a heat treatment for a processing time of one hour or more. The invention according to claim 8 of the present invention provides an antireflection film for preventing reflection of light for exposure. A step of forming tantalum nitride or titanium nitride on the main carrier layer, and a reactive ion etching method using a gas containing halogen so that a part of the upper surface of ruthenium is exposed. Removing a part of the film, the main carrier layer and the seed layer, and forming the ruthenium on the cap layer constituting the GMR element, thereby forming the ruthenium on the cap layer. Part of the main carrier layer and seed layer
When etching is performed using a gas containing halogen, the cap layer on the top of the GMR element is not etched, and the cap layer may be etched even when etching ruthenium with at least a gas containing oxygen. Therefore, the GMR element is not damaged by etching, the characteristics of the GMR element can be maintained, and a magnetoresistive thin-film magnetic head without deterioration in reproduction characteristics can be manufactured. Regarding the effect of the seed layer, a low-resistance main carrier layer is grown, and further heat treatment is performed to further reduce the resistance value of the main carrier layer, and furthermore, the main carrier layer, the seed layer, and the etching are etched. Since the stopper layer can be completely removed, a shunt of the reproduction current does not occur, and an effect is obtained that an excellent magnetoresistive thin film magnetic head having high reproduction sensitivity can be manufactured.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1) FIG. 1 is an explanatory schematic view showing Embodiment 1 of the present invention, and schematically shows a magnetoresistive thin-film magnetic head viewed from a head sliding surface side. It is a front schematic diagram.

In FIG. 1, an insulating member 2 made of Al ₂ O ₃ or the like is formed on a substrate 1 made of AlTiC or the like, and a permalloy, Co-based amorphous magnetic film or Fe-based lower shield layer 3 is deposited to a soft magnetic material particles the magnetic film or the like as a material, further Al ₂ thereon
The lower gap insulating layer 4 is formed using a non-magnetic insulating material such as O ₃ , AlN or SiO ₂ . Although not shown in detail, a NiFe-based alloy film, Co, CoFe
A free magnetic layer made of an alloy film or the like, a nonmagnetic conductive layer made of Cu or the like, a fixed magnetic layer made of a ferromagnetic material similar to the free magnetic layer, and an IrMn, αFe ₂ O ₄ , FeMn-based alloy film, A magnetoresistive element 5 (MR element or G element) composed of an antiferromagnetic layer made of a material such as a PtMn alloy film.
MR element. A vertical bias layer 6 is formed on the lower gap insulating layer 4 using a hard magnetic material such as a CoPt alloy so as to be in contact with the side surface of the GMR element 5. On the upper surface of the vertical bias layer 6 and a part of the left and right of the upper surface of the GMR element 5, as a seed layer 7, 100 tantalum nitride of a conductive material which can be etched by a reactive ion etching (hereinafter, referred to as RIE) gas is used. A main carrier layer 8 using tantalum as a material is formed on the seed layer 7, and an electrode lead layer 9 composed of the seed layer 7 and the main carrier layer 8 is formed. Are formed.
After the main carrier layer 8 is formed, a heat treatment is applied under the conditions of a processing temperature of 200 ° C. or more and a processing time of 1 hour or more. Next, the exposed GMR element 5 and electrode lead layer 9 are exposed.
, The upper gap insulating layer 10 is formed using the same insulating material as the lower gap insulating layer 4. An upper shield layer 11 is formed thereon using the same soft magnetic material as the lower shield layer 3 to form a magnetoresistive thin-film magnetic head. The above heat treatment may be performed any time after the main carrier layer is formed. The upper limit of the processing temperature and the processing time is G
Needless to say, it depends on the material of the MR element.
Needless to say, heat treatment must be performed in a magnetic field as needed.

The material of the main carrier layer 8 is preferably a low-resistance conductive material. The material used as the seed layer 7 is such that the low-resistance main carrier layer 8 grows and the main carrier It is necessary that the seed layer 7 be completely removed with the gas used to shape the layer 8 by RIE.

When tantalum is used as the material of the main carrier layer 8, the main carrier layer 8 has a low-resistance cubic structure (hereinafter referred to as α-tantalum).
However, in order to prevent damage to the GMR element due to a difference in etching rate between the main carrier layer of α-tantalum and the seed layer of tantalum nitride, a substantial film thickness distribution obtained during mass production must be obtained. Considering this, the difference in etching rate between the α-tantalum main carrier layer and the tantalum nitride seed layer is preferably within ± 10%. According to the examination result, the etching rate of the seed layer 7 is set to be substantially the same as that of the main carrier layer 8 by adjusting the nitrogen content of tantalum nitride by controlling the partial pressure of nitrogen when performing magnetron sputtering or ion beam sputtering. The nitrogen content of tantalum nitride, which makes the etching rate of the seed layer 7 substantially equal to that of the main carrier layer 8, is shown in FIG.
The nitrogen content and the etching rate shown in (a) (vs. α)
40% (atm%) from the relationship diagram of (− relative value of tantalum)
In this range, the relative value of α-tantalum to the etching rate is 0.9 or more, and the etching rate of the seed layer 7 is substantially the same as the etching rate of the main carrier layer 8. However, on the other hand, when the nitrogen content of tantalum nitride is 33% (atm%) or less, tantalum, which is the material of the main carrier layer 8, cannot grow into low-resistance α-tantalum. Therefore, it has been found that the optimal nitrogen content of tantalum nitride is in the range of 33% to 40% (atm%).

Further, after forming the main carrier layer 8 grown on low-resistance α-tantalum using the tantalum nitride as the seed layer 7, the heat treatment is performed at a processing temperature of 200 ° C. or more for 1 hour or more. Is added, as shown in FIG. 2B, which shows a comparison diagram of the resistance value of the main carrier layer.
It has been found that the resistance value of the tantalum main carrier layer is further reduced by a little over 10%, and is a low resistance value substantially equal to the resistance value when Cr is used as the seed layer.
It is considered that the decrease in the resistance value is a result of the reorientation of tantalum by the heat treatment. The heat treatment may be performed in any step as long as the main carrier layer is formed.

The main carrier layer 8 and the seed layer 7 are completely and precisely removed by etching using a gas containing halogen such as SF6 as an etching gas. The reproduction track width 12 set at the interval between the electrode lead layer 9 composed of the seed layer 8 and the seed layer 7 can be formed very accurately.

As described above, according to the first embodiment, a conductive material having a nitrogen content of 33% to 40% (atm
%) Of tantalum nitride as the seed layer and tantalum as the main carrier layer, low-resistance α-tantalum grows, and the heat treatment further reduces the resistance of the main carrier layer. In addition, since the seed layer can be completely removed by etching using an etching gas containing halogen such as SF6, a shunt of the reproduction current does not occur. As a result, the reproduction sensitivity can be improved, and the main current can be accurately measured. Since the electrode lead layer composed of the carrier layer 8 and the seed layer 7 can be formed, the reproducing head track width can be formed with high accuracy.

The tantalum nitride has a nitrogen content of 33.
By selecting the% to 40% (atm%), the etching rate of the seed layer can be set to substantially the same value as that of the main carrier layer, so that the yield of the thin film magnetic head can be improved.

(Embodiment 2) FIG. 3 is an explanatory schematic view showing Embodiment 2 of the present invention, and schematically shows a magnetoresistive thin-film magnetic head viewed from the head sliding surface side. FIG. 4 is a schematic front view, and FIG. 4 is an explanatory schematic diagram showing another example of Embodiment 2 of the present invention.

In FIG. 3, as in the first embodiment, a GMR element 31 and vertical bias layers 32 on both left and right sides thereof are formed.
Ruthenium 33 is deposited. A seed layer 34 and a main carrier layer 35 are formed thereon, and the electrode lead layer 3 composed of the seed layer 34 and the main carrier layer 35 is formed.
6 are formed.

As another example, as shown in FIG. 4, a ruthenium film 42 is formed on a GMR element 41 formed in the same manner as in the first embodiment.
To be in contact with both sides of the element 41 and the ruthenium 42,
A vertical bias layer 43 is formed. Vertical bias layer 43
A seed layer 44 and a main carrier layer 45 are formed on the ruthenium 42, and an electrode lead layer 46 composed of the seed layer 44 and the main carrier layer 45 is formed.
Although not shown, an upper gap insulating layer is formed so as to cover the exposed GMR element 41 and the electrode lead layer 46,
An upper shield layer is formed thereon to form a magnetoresistive thin-film magnetic head.

As in the first embodiment, after the main carrier layer 35 or 45 is formed, a heat treatment is applied at a processing temperature of 200 ° C. or more for 1 hour or more to obtain the main carrier layer 35 or 45. Alternatively, a lower resistance value can be obtained as 45. The heat treatment may be performed after the main carrier layer has been formed.

Usually, the cap layer on the top of the GMR element is often made of tantalum, and contains a reactive ion-etchable gas such as halogen for forming the main carrier layer and the seed layer into a predetermined shape. It may be etched by gas. In order to maintain the characteristics of the GMR element, it is necessary to prevent the cap layer from being etched, and to form a film on the cap layer using ruthenium which is not removed by a gas containing halogen,
Etching of the cap layer by a gas containing halogen can be prevented. Due to such an effect of ruthenium, the GMR element is not damaged due to the difference in the etching rate between the α-tantalum main carrier layer and the tantalum nitride seed layer in the first embodiment, and the etching rates are substantially the same. There is no need to regulate that the seed layer has sufficient adhesion strength, and
It is sufficient if the nitrogen content of tantalum nitride as a seed layer for growing α-tantalum on the main carrier layer.

On the other hand, it is known that ruthenium can be etched using an oxygen-containing gas. After etching the main carrier layer and the seed layer, the cap layer is etched by using an oxygen-containing gas. Without this, ruthenium formed on the cap layer can be patterned into a desired shape.

As in the first embodiment, a low-resistance conductive material is grown as the main carrier layer, and a low-resistance α-tantalum main carrier layer is grown as the seed layer.
Tantalum nitride having a nitrogen content of 33% (atm%) or more is formed as a conductive material from which the seed layer is completely removed by etching.

According to the examination result, as in the first embodiment, tantalum nitride having a nitrogen content of 33% (atm%) or more is formed as a seed layer for growing α-tantalum as a main carrier layer. The selectivity can be increased by the presence of ruthenium even if the etching rate of the seed layer is not made substantially the same as the etching rate of the main carrier layer. It was also found that no device damage occurred. The main carrier layer formed of α-tantalum and the seed layer formed of tantalum nitride are etched with a gas containing halogen, and further, ruthenium formed on the cap layer is etched with a gas containing at least oxygen. For example, the cap layer on the top of the GMR element can completely remove the main carrier layer, the seed layer, and ruthenium without being scraped off.

As described above, according to the second embodiment, similarly to the first embodiment, the seed layer can be completely removed by RIE, and the same effect as that of the first embodiment can be obtained. As a result, the reproduction current is not shunted, and the reproduction sensitivity can be improved. Further, due to the presence of ruthenium on the cap layer, the cap layer located on the top of the GMR element is not shaved by an etching gas for removing the main carrier layer and the seed layer by etching. Even if there is a difference in the etching rate between the layers, the GMR element is not damaged and the characteristics of the GMR element can be maintained well.

(Embodiment 3) FIGS. 5 and 6 are explanatory schematic views showing Embodiment 3 of the present invention, and schematically show a magnetoresistive thin film magnetic head viewed from the head sliding surface side. It is the schematic front schematic diagram shown.

In FIG. 5, as in the first embodiment, a seed layer 53 is formed on the upper surface of the GMR element 51 and a part of the upper surface of the vertical bias layer 52, and a main carrier layer 54 is further formed thereon. Is formed to form an electrode lead layer 55 composed of the seed layer 53 and the main carrier layer 54. Further, an anti-reflection layer 56 is formed thereon using a material that can be etched with a RIE-reactive gas used for forming the main carrier layer 54. Exposed GMR
An upper gap insulating layer 57 is formed using the same insulating material as the lower gap insulating layer 4 so as to cover the upper surface of the element 51 and the antireflection layer 56. The upper shield layer 5 is formed thereon using the same soft magnetic material as the lower shield layer 3.
8 are formed to form a magnetoresistive thin film magnetic head.

The purpose of the antireflection layer 56 will be described below. To form the main carrier layer 54 and the seed layer 53, as shown in FIG. 6, the seed layer 61 and the main carrier layer 62 are formed so as to cover the GMR element 51 and the vertical bias layers 52 on both left and right sides thereof. And the main carrier layer 6
2 is coated with a resist 63 and subjected to photolithography to form the seed layer 61 and the main carrier layer 62 in a predetermined shape. When the photolithography is performed, light is applied by the upper surface of the main carrier layer 62. Due to reflection, the resist material may not be able to form a predetermined shape accurately. In order to prevent light reflection by the main carrier layer 62, an anti-reflection layer 64 for preventing reflection is formed on the main carrier layer 62, and a resist 6 is formed thereon.
3, the main carrier layer 62 and the seed layer 61 can be accurately formed in a predetermined shape by performing photolithography and etching.

Also in the second embodiment, as in the first embodiment, it is preferable to use a low-resistance conductive material as the material of the main carrier layer 54, and it is used as the seed layer 53. The material is such that a low resistance α-tantalum main carrier layer 54 is grown and the main carrier layer 54 is formed.
The seed layer 53 is completely removed with a gas used to form the main carrier layer 54 into a predetermined shape by RIE.
Tantalum nitride having a nitrogen content of 33% to 40% (atm%) is used so that the etching rate of the seed layer 53 becomes substantially the same as that of the seed layer 53. The main carrier layer 54 is used as a material of the antireflection layer 56. A gas used for forming a predetermined shape by RIE, and tantalum nitride or titanium nitride is used so that the antireflection layer 56 is completely removed.

A gas containing halogen can be used as an etching gas for etching the main carrier layer, the seed layer, and the antireflection layer by RIE. Also, by appropriately changing the nitrogen content of tantalum nitride or titanium nitride as the anti-reflection layer 56, the etching rate of the anti-reflection layer 56 is set to substantially the same value as the respective etching rates of the main carrier layer 54 and the seed layer 53. can do.

Further, it is needless to say that the heat treatment after the formation of the electrode lead layer in the first embodiment is a very effective means for obtaining a low-resistance electrode lead layer.

As described above, according to the third embodiment, as in the first embodiment, the seed layer can be completely removed by RIE, and the same effect as in the first embodiment can be obtained. Further, the etching rates of the main carrier layer, the seed layer, and the antireflection layer are substantially the same, the damage of the GMR element does not occur, the yield of the thin-film magnetic head can be improved, and the exposure is performed by the antireflection layer. Suppressing the reflection of light at the time, it is possible to perform accurate photolithographic processing of the resist,
An accurate shape of the electrode lead layer including the main carrier layer and the seed layer can be formed, and the reproduction track width can be formed with high accuracy.

(Embodiment 4) FIGS. 7 and 8 are schematic views for explaining Embodiment 4 of the present invention, and schematically show a magnetoresistive thin-film magnetic head viewed from the head sliding surface side. It is the schematic front schematic diagram shown.

In FIG. 7, a ruthenium 73 is formed so as to cover the top surfaces of the GMR element 71 and the vertical bias layer 72 in the same manner as in the above-described second embodiment. An electrode lead layer 76 composed of a carrier layer 75 is formed. Also, as shown in FIG.
As in the other example of the second embodiment, the GMR
Ruthenium 81 is formed on the element 71, and a vertical bias layer 82 is formed so as to be in contact with both sides of the GMR element 71 and the ruthenium 81. On the vertical bias layer 82 and the ruthenium 81, an electrode lead layer 76 including a seed layer 74 and a main carrier layer 75 is formed.

Further, an anti-reflection layer 77 is formed thereon by using a material which can be etched by a RIE-reactive gas used for forming the main carrier layer 75 as in the third embodiment.

As in the third embodiment, an insulating material similar to that of the lower gap insulating layer 4 is used so as to cover the exposed upper surface of the GMR element 71 and the antireflection layer 77, though not shown here. To form an upper gap insulating layer,
An upper shield layer is formed thereon using the same soft magnetic material as the lower shield layer 3 to form a magnetoresistive thin-film magnetic head.

The condition and timing of the heat treatment are the same as those in the first to third embodiments, and the effects are the same.

The main carrier layer and the seed layer are made of tantalum and nitrogen, respectively, as in the second embodiment.
It is formed of 3% or more of tantalum nitride, and the film of the anti-reflection layer is completely formed with a gas used for forming the main carrier layer into a predetermined shape by RIE, similarly to the second embodiment. Needless to say, it is formed of tantalum nitride or titanium nitride so as to be removed.

The effect of forming a seed layer and the effect of forming ruthenium with tantalum nitride having a nitrogen content of 33% or more are the same as those in the first and second embodiments, respectively. Is the same as that of the third embodiment.

As described above, according to the fourth embodiment, as in the first embodiment, the seed layer can be completely removed, no shunt of the reproduction current occurs, and the reproduction sensitivity is improved. Can be achieved. Further, since the ruthenium film is formed, even if there is a difference in the etching rate between the main carrier layer and the seed layer, the GMR element is not damaged, and the characteristics of the GMR element can be maintained well. The yield of the head can be improved. Further, by forming the antireflection layer, the shape of the electrode lead layer composed of the main carrier layer and the seed layer can be accurately formed, and the reproduction track width can be formed with high precision.

(Fifth Embodiment) FIGS. 9 to 26 are schematic explanatory diagrams showing a fifth embodiment of the present invention, and are process schematic explanatory diagrams for explaining a manufacturing process of a magnetoresistive thin film magnetic head. is there. The outline of each step of the method for manufacturing a thin-film magnetic head will be described below with reference to the drawings.

As a first step, as schematically shown in a perspective view in FIG. 9, an insulating layer 92 made of an insulating material such as Al ₂ O ₃ is formed on a protective layer 91 made of AlTiC or the like. Permalloy or F
The lower shield layer 94 is frame-plated into a predetermined shape using a soft magnetic material such as an e-based alloy magnetic film, or
FIG. 10 is a cross-sectional view of a sliding surface (a cross section in the vicinity indicated by a two-dot chain line 95 in FIG. 9. Hereinafter, a schematic cross-sectional view taken along a plane parallel to the head sliding surface is simply referred to as a sliding surface cross-sectional view. ), Permalloy, sendust, C
After forming the lower shield layer 101 by vacuum or plating using a soft magnetic material such as an o-based amorphous magnetic film or an Fe-based alloy magnetic film, a resist is applied so that the upper surface of the substrate 93 is exposed. The lower shield layer 101 is removed in a predetermined shape by removing the lower shield layer 101 by a method such as milling or RIE, and as shown in the sectional view of the sliding surface in FIG.
After the lower shield insulating layer 111 is formed using a nonmagnetic insulating material such as Al ₂ O ₃ , AlN or SiO ₂ so as to cover the surface, as shown in the sectional view of the sliding surface in FIG. By the method described above, the upper surface of the lower shield insulating layer 111 is shaved so that the upper surface of the lower shield layer 94 is exposed, and the lower shield layer 121 and the lower shield insulating layer 122 are formed. A first plane 123 composed of the upper surface of is formed. The predetermined shape of the lower shield layer 94 is shown in FIG.
The shape is not limited to a rectangular parallelepiped as shown in FIG. In order to facilitate the explanation, a substantially rectangular parallelepiped is used here.

As a second step, as shown in the sectional view of the sliding surface in FIG. 13, the lower gap insulating layer 131 is formed on the first plane 123 using the same insulating material as the lower shield insulating layer 111. A film is formed, and an IrMn-based alloy film, a FeMn-based alloy film, a PtMn-based alloy film, αFe ₂ O ₃
Alternatively, the antiferromagnetic layer 132 made of a material such as NiO, NiF
Fixed magnetic layer 133 made of e-based alloy film, Co, CoFe alloy film, etc., nonmagnetic layer 134 made of Cu or the like, free magnetic layer 135 made of the same material as fixed magnetic layer 133, tantalum, etc. Are sequentially laminated to form a magnetoresistive element film (MR element film or GMR element film; hereinafter, referred to as a GMR element film) 137. Here, the order of lamination is changed to the antiferromagnetic layer, the pinned magnetic layer, the nonmagnetic layer, and the free magnetic layer, and the reverse order, that is, the free magnetic layer, the nonmagnetic layer, the pinned magnetic layer, and the antiferromagnetic layer. Laminate and then form a cap layer on it,
A GMR element film may be formed.

Next, as a third step, as shown in a sectional view of the sliding surface in FIG.
By removing a part of the GMR element film 137, the antiferromagnetic layer 14 is removed.
2. A magnetoresistive element (hereinafter, referred to as a GMR element) 147 including a fixed magnetic layer 143, a nonmagnetic layer 144, a free magnetic layer 145, and a cap layer 146 is formed, and the same mushroom-type resist 141 is used. A vertical bias layer 148 is formed of a material such as a CoPt alloy on both left and right sides of the removed GMR element 147.

As a fourth step, as shown in the sectional view of the sliding surface in FIG. 15, tantalum is applied to the target material so as to cover the upper surface of the GMR element portion 147 and the upper surfaces of the vertical bias layers 148 on the left and right sides thereof. And a film is formed in an atmosphere of argon gas containing nitrogen in a range of 0.5% to 10%.
A seed layer 151 of tantalum nitride having a nitrogen content of between about 40% (atm%) is formed.

Further, as a fifth step, a main carrier layer 161 is formed on the seed layer 151 by using tantalum, as shown in the sectional view of the sliding surface in FIG. Electrode lead layer 162 composed of seed layer 151
To form

As a sixth step, after forming the main carrier layer 161 on the seed layer 151, a heat treatment is performed at a processing temperature of 200 ° C. or more for a processing time of 1 hour or more. By performing the heat treatment, the resistance value of the main carrier layer 161 can be reduced. (Reference: Fig. 2 (b)
As a seventh step, as shown in the sectional view of the sliding surface in FIG. 17, an etching gas containing halogen such as SF6 is used to expose a part of the upper surface of the GMR element 147 by RIE using an etching gas. , A part of the main carrier layer 161 and the seed layer 151 on the upper surface of the GMR element part 147 are removed to form a main carrier layer 171 and a seed layer 172, and an electrode lead layer composed of the carrier layer 171 and the seed layer 172. 173 is formed. At this time, since the dimensions of the main carrier layer 161 and a part of the seed layer 151 are completely removed completely accurately, the reproduction track width 174 set at the interval between the electrode lead layers 173 can be formed very accurately. it can.

As an eighth step, FIG. 18 is a schematic plan view seen from above, and FIG. 19 is a sectional view taken along a plane parallel to the head sliding surface in FIG. 18 (section AA in FIG. 18). As described above, the main carrier layers 171,
The seed layer 172, the vertical bias layer 148, and the GMR element portion 147 are patterned and formed into a predetermined shape.
Main carrier layer 181, seed layer 182, longitudinal bias layer 1
83 and magnetoresistive element (hereinafter referred to as GMR element)
184 are formed. In FIG. 18, the predetermined shape after patterning is shown as a simple shape for ease of explanation, but may be actually a complicated shape.

As a ninth step, as shown in the sectional view of the sliding surface in FIG. 20, a resist (not shown) formed for patterning in the seventh step is used to carry out the seventh step. Lower gap insulating layer 1 so as to fill in the shaved portion
The side insulating portion 201 is formed by using the same insulating material as that of the film 31.

As a tenth step, as shown in the sectional view of the sliding surface in FIG.
The upper gap insulating layer 211 is formed using the same insulating material as the lower gap insulating layer 131 so as to cover the upper part of the upper gap insulating layer 81 and the GMR element 184.

As an eleventh step, as shown in the sectional view of the sliding surface in FIG. 22, the upper shield layer 221 is formed on the upper gap insulating layer 211 by using the same soft magnetic material as that of the lower shield layer 121. 23 is formed by frame plating so as to have a predetermined shape (not shown) projected on the Y plane, or, as shown in the sectional view of the sliding surface in FIG. FIG. 24
As shown in the sectional view of the sliding surface, the upper shield layer 2 is coated with a resist by a method such as milling or RIE.
The upper shield layer 22 having a predetermined shape (not shown) projected on the XY plane when the track width direction is set to the X axis and the head gap depth direction is set to the Y axis
1 may be formed.

Next, as a twelfth step, as shown in the sectional view of the sliding surface in FIG. 25, the same insulating material as the upper gap insulating layer 211 is covered so as to cover the upper gap insulating layer 211 and the upper shield layer 221. The upper shield insulating layer 251 is formed by using the method shown in FIG.
The upper shield insulating layer 251 is polished parallel to the XY plane, that is, parallel to the track width direction by a method such as wrapping or CMP so that the projected shape of the upper shield layer 221 in the XY plane is exposed. The layer 261 and the upper shield insulating layer 262 are formed, the second plane 263 formed on the upper surfaces of the upper shield layer 261 and the upper shield insulating layer 262 is formed, and the magnetoresistive thin-film magnetic head 264 is manufactured. .

When tantalum is used as the material for the electrode lead layer in the step of the above-mentioned brother 5, it is necessary to grow low-resistance α-tantalum as the electrode lead layer. As shown in FIG. 2 in FIG.
Tantalum nitride having a nitrogen content of 40% (atm%) can be formed into a film, and SF6 is used as an etching gas.
It is most preferable to use a gas containing halogen such as, for example, the etching rate of the seed layer can be set to substantially the same value as the etching rate of the electrode lead layer.
The occurrence of damage to the MR element can be eliminated.

The heat treatment in the sixth step may be performed in any step after the electrode lead layer is formed on the seed layer. What is necessary is just to implement in the process considered.

As described above, according to the fifth embodiment, 3
The seed layer made of tantalum nitride having a nitrogen content of 3% to 40% (atm%) grows low-resistance α-tantalum, and further reduces the resistance of the electrode lead layer by heat treatment. The seed layer can be completely removed by etching using an etching gas containing halogen such as SF6 or SF6, so that a shunt of the reproduction current does not occur. Can be. In addition, the reproducing head track width can be formed with high precision, and a magnetoresistive thin film magnetic head suitable for producing a narrow track width can be produced.

By adjusting the nitrogen content of the tantalum nitride to 33% to 40% (atm%) by adjusting the nitrogen partial pressure during sputtering and the composition of the target material, the etching rate of the seed layer can be controlled by the electrode. It can be set to substantially the same value as the lead layer, and G
A magnetoresistive thin-film magnetic head having a high yield without producing any damage to the MR element can be manufactured.

(Embodiment 6) FIGS. 27 to 38 are schematic explanatory diagrams showing Embodiment 6 of the present invention, and are process schematic explanatory diagrams for explaining a manufacturing process of a magnetoresistive thin-film magnetic head. is there. The outline of each step of the method for manufacturing a thin-film magnetic head will be described below with reference to the drawings.

As in the above-described fifth embodiment, as a third step, as shown in FIG.
After forming the vertical bias layers 148 on the left and right sides of the GMR element 147 and the left and right sides of the GMR element 147 as shown in the sectional view of the sliding surface in FIG. Ruthenium 271 which is a non-magnetic material is formed to cover the vertical bias layer 148.

As the fifth step, as shown in the sectional view of the sliding surface in FIG. 28, the nitrogen content of the seed layer 281 is set to 33% (atm
%) Is formed.

In the sixth step, as in the fifth step of the fifth embodiment, a main carrier layer made of tantalum is formed so as to cover the seed layer. Α-Tantalum grows as the main carrier layer.

In the seventh step, as in the fifth embodiment, a heat treatment is performed at a processing temperature of 200 ° C. or more and a processing time of 1 hour or more to further reduce the resistance value of the main carrier layer.

As an eighth step, as shown in the sectional view of the sliding surface in FIG. 29, a photoresist (not shown) is applied, and the ruthenium is etched by RIE using an etching gas containing halogen such as SF6. The main carrier layer 291 and a part of the seed layer 281 are removed so that a part of the upper surface of the 271 is exposed, and the main carrier layer 292 and the seed layer 293 are removed.
To form an electrode lead layer 294 composed of the main carrier layer 292 and the seed layer 293.

As a ninth step, as shown in the sectional view of the sliding surface in FIG. 30, the ruthenium 271 is etched by using a photoresist applied in the eighth step and using a gas containing at least oxygen as an etching gas. Thus, a part of the upper surface of the GMR element part 147 is shaved so as to be exposed, and the ruthenium 301 is formed in a predetermined shape.

As a tenth step, the fifth embodiment is described.
In the same manner as in the eighth step, the main carrier layer, the seed layer, the ruthenium thin film layer, the vertical bias layer, and the GMR element portion are patterned to form a GMR element, a vertical bias layer, a ruthenium thin film layer, a seed layer, An electrode lead layer is formed in a predetermined shape.

The subsequent steps are performed in the same manner as the ninth to twelfth steps in the fifth embodiment described above.
A magnetoresistive thin film magnetic head 31 as shown in FIG.
1 can be produced.

As another example, in the second step, the antiferromagnetic layer, the pinned magnetic layer, the nonmagnetic layer, the free magnetic layer, and the cap layer are formed in the same manner as in the second step of the fifth embodiment. A GMR element film 137 is formed on the GMR element film 137 as shown in FIG.
A ruthenium 321 is formed thereon.

As a third step, as shown in the sectional view of the sliding surface in FIG. 33, a mushroom type resist (not shown) is formed in the same manner as in the third step of the fifth embodiment. The GMR element section 331 and ruthenium 3
After forming the layer 32, the vertical bias layer 333 is formed so as to be in contact with the left and right sides of the GMR element section 331 and the ruthenium 332.

As a fourth step, as shown in the sectional view of the sliding surface in FIG. 34, ruthenium 332 and vertical bias layer 33 are formed.
Tantalum nitride is formed as the seed layer 341 so as to cover the upper surface of each of the third and third layers, and the fifth step is performed so as to cover the seed layer 341 as in the fifth step of the fifth embodiment. And the main carrier layer 3 using tantalum as a material.
A film 42 is formed and grown on α-tantalum, and a heat treatment is applied as a sixth step.

As a seventh step, as shown in the sectional view of the sliding surface in FIG. 35, a photoresist (not shown) is formed so that a part of the upper surface of the ruthenium 332 is exposed.
Using an etching gas containing a halogen such as SF6, R
IE removes a part of the main carrier layer 342 and the seed layer 341 and removes the main carrier layer 351 and the seed layer 352.
To form an electrode lead layer 353.

As an eighth step, as shown in the sectional view of the sliding surface in FIG. 36, using the photoresist applied in the seventh step, a gas containing at least oxygen is used as an etching gas, and the GMR element part 331 is formed. Ruthenium 332 is removed by etching so that a part of the upper surface is exposed.
Note that part of the ruthenium 332 remains on a part of the upper surface of the GMR element part 331.

As a ninth step, as shown in the sectional view of the sliding surface in FIG. 37, the main carrier layer 351, the seed layer 352, the vertical bias layer 333, the ruthenium 332
The GMR element portion 331 is patterned and formed into a predetermined shape, and the main carrier layer 371 and the seed layer 37 are formed.
2 and the vertical bias layer 37
4. Ruthenium 375 and GMR element 376 are formed.

As a tenth step, using the resist (not shown) formed for patterning in the ninth step, the portion removed in the ninth step is buried.
A side insulating portion is formed as a film in the same manner as in the ninth step of the fifth embodiment, and the eleventh step is performed in the same manner as in the tenth step of the fifth embodiment. An upper gap insulating layer is formed so as to cover the portion, the electrode lead layer, and the exposed GMR element.

As the twelfth step, the fifth embodiment described above is used.
Similarly to the eleventh step, on the upper gap insulating layer,
Frame plating is performed so that the upper shield layer has a predetermined shape (not shown), or after forming the upper shield layer on the upper gap insulating layer, a resist is applied, and milling or RIE is performed. By the above method, the upper shield layer may be scraped off to form an upper shield layer having a predetermined shape. Next, as a thirteenth step, an upper shield insulating layer is formed so as to cover the upper gap insulating layer and the upper shield layer, and as shown in the sliding surface sectional view of FIG. The upper shield insulating layer is polished parallel to the XY plane, that is, parallel to the track width direction by a method such as wrapping or CMP so that the projected shape on the Y plane is exposed.
1 and an upper shield insulating layer 382, and a second plane 383 formed by the upper surfaces of the upper shield layer 381 and the upper shield insulating layer 382, respectively, to produce a magnetoresistive thin film magnetic head 384. Is also good.

The heat treatment in the sixth step may be performed in any step after the main carrier layer is formed on the seed layer, as in the fifth embodiment. Needless to say.

As described above, according to the sixth embodiment, G
By forming ruthenium on the cap layer constituting the MR element, a part of the electrode lead layer including the main carrier layer and the seed layer formed thereon is etched using a gas containing halogen. G when removing
The cap layer at the top of the MR element is not etched, and the cap layer is not etched even when ruthenium is etched with a gas containing at least oxygen, so that the GMR element is not damaged. The effect of the seed layer is, of course, the same as that of the above-described fifth embodiment. Of course, a shunt does not occur in the reproduction current flowing through the electrode lead layer at the time of reproduction, and the reproduction sensitivity is high. A magnetoresistive thin-film magnetic head having a track width and a high yield can be manufactured.

(Embodiment 7) FIGS. 39 to 44 are schematic explanatory diagrams showing an embodiment 7 of the present invention, and are process schematic explanatory diagrams for explaining a manufacturing process of a magnetoresistive thin film magnetic head. is there. The outline of each step of the method for manufacturing a thin-film magnetic head will be described below with reference to the drawings.

As in the above-described fifth embodiment, as a fourth step, as shown in FIG.
47 and the vertical bias layers 148 on the left and right sides thereof.
33% to 4% as the seed layer 151 so as to cover the upper surface of
A film of tantalum nitride having a nitrogen content of 0% (atm%) is formed, and as a process of a younger brother 5, as shown in FIG.
Forming a main carrier layer 161 on the seed layer 151;
As a sixth step, a heat treatment is performed at a processing temperature of 200 ° C. or more for a processing time of one hour or more, and then, as a seventh step, as shown in the sectional view of the sliding surface in FIG. Tantalum nitride or titanium nitride is formed as the antireflection layer 391 so as to cover the layer 161.

As an eighth step, as shown in the sectional view of the sliding surface in FIG. 40, a part of the upper surface of the GMR element portion 147 is exposed by RIE using an etching gas containing halogen such as SF6. Next, the anti-reflection layer 391, the main carrier layer 161 and the seed layer 151 on the GMR element portion 147 are partially removed to form the anti-reflection layer 401, the main carrier layer 402 and the seed layer 403. At this time, a photoresist is applied and etched into a predetermined shape by a photolithography process.
If there is no light, light is reflected on the surface of the main carrier layer 161, and it is difficult to accurately form the photoresist in a predetermined shape, and the shapes of the main carrier layer 402 and the seed layer 403 formed by etching are not precisely determined. It cannot be finished well. However, by forming the anti-reflection layer 401 from a material capable of preventing reflection of light during photolithography, the shape of the photoresist can be precisely formed. Therefore, not only the anti-reflection layer 401 after etching but also the main carrier layer The 402 and the seed layer 403 are formed with high precision, and the reproduction track width 405 that can be set at the interval between the electrode lead layers 404 composed of the main carrier layer 262 and the seed layer 403 can also be formed with high precision.

As a ninth step, as shown in the sectional view of the sliding surface in FIG. 41, the laminated antireflection layer 401, electrode lead layer 404, vertical bias layer 148 and GMR element portion 147 are patterned. Formed into a predetermined shape,
Antireflection layer 411, main carrier layer 412, and seed layer 4
13, an electrode lead layer 414 and a vertical bias layer 415
And the GMR element 416 is formed.

As a tenth step, as shown in the sectional view of the sliding surface in FIG. 42, a resist (not shown) formed for patterning in the eighth step is used to carry out the eighth step. Lower gap insulating layer 1 so as to fill the removed portion.
The side insulating portion 421 is formed using the same insulating material as that of the side insulating portion 31.

As an eleventh step, as shown in the sectional view of the sliding surface in FIG.
An upper gap insulating layer 431 is formed using an insulating material similar to that of the lower gap insulating layer 131 so as to cover the upper surfaces of the first and GMR elements 416.

As a twelfth step, the fifth embodiment described above is used.
As in the eleventh step, the upper shield layer is formed by frame plating on the upper gap insulating layer 431 into a predetermined shape using the same soft magnetic material as the lower shield layer. Alternatively, after forming an upper shield layer on the upper gap insulating layer 431, a resist is applied, and the upper shield layer is scraped off by a method such as milling or RIE.
An upper shield layer having a predetermined shape may be formed.

Next, as a thirteenth step, although not shown in detail, similarly to the eleventh step in the fifth embodiment, the upper shield insulating layer is formed so as to cover the upper gap insulating layer and the upper shield layer. After forming the layer, the upper shield insulating layer is polished in parallel to the XY plane, that is, parallel to the track width direction by a method such as wrapping or CMP so that the surface of the upper shield layer is exposed. As shown in the figure, the upper shield layer 441 and the upper shield insulating layer 44
2 and a second plane 443 formed on the upper surfaces of the upper shield layer 441 and the upper shield insulating layer 442, respectively.
Is formed, and a magnetoresistive thin-film magnetic head 444 is manufactured.

When the material used as the main carrier layer in the above-mentioned step 5 is tantalum, it is necessary to grow low-resistance α-tantalum as the main carrier layer. 33% as seed layer
It is optimal to form a film of tantalum nitride having a nitrogen content of about 40% (atm%), use tantalum nitride or titanium nitride as an antireflection layer, and use a gas containing halogen such as SF6 as an etching gas. . Also, by appropriately setting the nitrogen content of titanium nitride as an anti-reflection layer and changing the composition ratio, the etching rate of the anti-reflection layer can be made equal to the etching rate of the electrode lead layer composed of the main carrier layer and the seed layer. It can be almost the same value.

The heat treatment in the sixth step may be performed in any step as long as the main carrier layer is formed on the seed layer as in the fifth embodiment.

As described above, according to the seventh embodiment, an anti-reflection layer for preventing light reflection is formed on the main carrier layer, in addition to the same effects as those of the fifth embodiment. Thereby, the photoresist for etching the main carrier layer and the seed layer can be formed in a good shape, so that the main carrier layer and the seed layer can be formed with high accuracy, and thus the reproduction track width can be formed with high accuracy. Thus, a magnetoresistive thin-film magnetic head suitable for manufacturing a narrow track width can be manufactured.

A low resistance α-tantalum electrode lead layer is grown by the seed layer composed of tantalum nitride having a nitrogen content of 33% to 40% (atm%), and the electrode lead is formed by heat treatment. This also has the effect of lowering the resistance value of the layer, and the seed layer can be prevented from remaining on the GMR element portion. Therefore, a shunt does not occur in the reproduction current flowing through the electrode lead layer at the time of reproduction. If sensitivity is obtained and there is almost no difference between the etching rates of the seed layer, the electrode lead layer and the antireflection layer, the GMR
The occurrence of element damage can be eliminated, and a magnetoresistive thin film magnetic head with a high yield can be manufactured.

(Eighth Embodiment) FIGS. 45 to 48 are schematic explanatory diagrams showing an eighth embodiment of the present invention, and are process schematic explanatory diagrams for explaining a manufacturing process of a magnetoresistive thin film magnetic head. is there. The outline of each step of the method for manufacturing a thin-film magnetic head will be described below with reference to the drawings.

First Steps to Same as in the Sixth Embodiment
After applying a heat treatment to the main carrier layer through the seventh step,
As an eighth step, as shown in the sectional view of the sliding surface in FIG. 45, tantalum nitride or titanium nitride is formed as an antireflection layer 452 so as to cover the main carrier layer 451.

In the steps after the ninth step, a magnetoresistive thin-film magnetic head is manufactured in the same manner as the steps after the eighth step in the sixth embodiment.

That is, in the ninth step, an antireflection layer is formed by RIE so that a part of the upper surface of ruthenium is exposed.
A part of the main carrier layer and the seed layer is removed. As a tenth step, ruthenium is removed by etching using a gas containing oxygen as an etching gas so that a part of the upper surface of the GMR element portion is exposed. In this step, the antireflection layer, the main carrier layer, the seed layer, the ruthenium thin film layer, the vertical bias layer, and the GMR element are patterned into a predetermined shape. Next, as a twelfth step, a side insulating portion is formed and formed using the same insulating material as that of the lower gap insulating layer so as to fill the portion removed in the eleventh step, and as a thirteenth step, An upper gap insulating layer is formed using the same insulating material as the lower gap insulating layer so as to cover the side insulating portion, the antireflection layer, and the GMR element. As a fourteenth step, the upper gap insulating layer is formed. The upper shield layer is formed by frame plating using a soft magnetic material similar to the lower shield layer so that the upper shield layer has a predetermined shape (not shown). As a fifteenth step, an upper gap insulating layer and an upper shield layer are formed. An upper shield insulating layer is formed so as to cover the upper shield layer, and the upper shield insulating layer is polished so that the upper surface of the upper shield layer is exposed, thereby forming an upper shield layer and an upper shield insulating layer. Yo To,
A second plane 463 composed of upper surfaces of the upper shield layer 461 and the upper shield insulating layer 462 is formed, and a magnetoresistive thin-film magnetic head 464 is manufactured.

Further, after the heat treatment is applied to the formed main carrier layer through the same first to sixth steps as in the other example of the sixth embodiment, a seventh step is performed.
As shown in the sectional view of the sliding surface in FIG.
Tantalum nitride or titanium nitride is formed as the anti-reflection layer 472 so as to cover the top of the first antireflection layer 472.

In the steps after the eighth step, a magnetoresistive thin-film magnetic head is manufactured in the same manner as the steps after the seventh step in another example of the sixth embodiment.

That is, as an eighth step, a photoresist is formed, and the antireflection layer, the main carrier layer and a part of the seed layer are removed by RIE so that a part of the upper surface of ruthenium is exposed. As a ninth step, ruthenium is etched away by using a gas containing at least oxygen as an etching gas so that a part of the upper surface of the GMR element portion is exposed. As a tenth step, an antireflection layer, a main carrier layer, The seed layer, the vertical bias layer, the ruthenium, and the GMR element are patterned and formed into a predetermined shape. As an eleventh step, a side insulating part is formed and formed. As a twelfth step, a side insulating part is formed. An upper gap insulating layer is formed so as to cover the antireflection layer and the exposed GMR element. Next, as a thirteenth step, a frame plating is formed on the upper gap insulating layer so that the upper shield layer has a predetermined shape. As a fourteenth step, the upper gap insulating layer and the upper shield layer are covered. 48, after the upper shield insulating layer is formed, the upper shield insulating layer is polished so that the upper surface of the upper shield layer is exposed.
As shown in the figure, the second plane 48 formed on the upper surfaces of the upper shield layer 481 and the upper shield insulating layer 482, respectively.
3 to form a magnetoresistive thin-film magnetic head 484.

In the first to eighth embodiments described above, the seed layer is formed to a thickness of 100 Å or less.

As described above, according to the eighth embodiment, similar to the sixth embodiment, the presence of ruthenium allows G
A magnetoresistive thin-film magnetic head having a high read sensitivity and a high yield is produced without causing damage to the MR element and without causing a shunt in a read current flowing through the electrode lead layer at the time of read due to complete removal of the seed layer. In addition to the effect that the anti-reflection layer can remove the electrode lead layer composed of the main carrier layer and the seed layer with extremely high accuracy, the reproduction track width set by the distance between the electrode lead layers is reduced. A highly accurate magnetoresistive thin-film magnetic head suitable for narrowing tracks can be manufactured.

[0123]

As described above, according to the present invention, tantalum nitride having a nitrogen content of 33% to 40% (atm%) is formed as a seed layer, tantalum is formed as a main carrier layer, and an etching gas for etching them is used. As a result, a low-resistance α-tantalum main carrier layer is grown on the seed layer by using a halogen-containing gas such as SF6, and the main carrier layer and the seed layer are etched by a halogen-containing gas such as SF6. The effect is that the layer can be completely removed, no shunting of the reproduction current occurs, and the reproduction sensitivity can be improved. Further, the composition ratio of tantalum nitride as a material for the seed layer is set to 3
By selecting from 3% to 40% (atm%), the etching rate of the seed layer is set to α as the material of the electrode lead layer.
-The etching rate of tantalum can be set to substantially the same value, the occurrence of damage to the GMR element due to etching can be eliminated, and the yield of the thin-film magnetic head can be improved.

Further, by forming ruthenium on the cap layer constituting the GMR element, a part of the main carrier layer and the seed layer formed thereon is removed by etching. The cap layer at the uppermost portion is not etched, and the cap layer is not etched even when ruthenium is removed by etching with at least a gas containing oxygen, the GMR element is not damaged, and the characteristics of the GMR element deteriorate. Nothing to do.

[Brief description of the drawings]

FIG. 1 is a schematic front schematic view of a magnetoresistive thin-film magnetic head according to a first embodiment of the present invention;

FIG. 2 is a graph showing the dependence of the etching rate of tantalum nitride on the nitrogen content for explaining Embodiment 1 of the present invention, and a comparison diagram of the resistance values of the electrode lead layers.

FIG. 3 is a schematic front schematic view of a magnetoresistive thin-film magnetic head according to a second embodiment of the present invention;

FIG. 4 is a schematic front schematic view of a magnetoresistive thin-film magnetic head showing another example of Embodiment 2 of the present invention;

FIG. 5 is a schematic front schematic view of a magnetoresistive thin-film magnetic head according to a third embodiment of the present invention;

FIG. 6 is a schematic front schematic view for explaining Embodiment 3 of the present invention.

FIG. 7 is a schematic front schematic view of a magnetoresistive thin film magnetic head according to a fourth embodiment of the present invention.

FIG. 8 is a schematic front schematic view of a magnetoresistive thin film magnetic head showing another example of Embodiment 4 of the present invention.

FIG. 9 is a schematic perspective view showing a part of a first step for describing a method of manufacturing a magnetoresistive thin film magnetic head according to a fifth embodiment of the present invention.

FIG. 10 is a sectional view of a sliding surface showing a part of another example of the first step in the fifth embodiment of the present invention.

FIG. 11 is a sliding surface cross-sectional view showing another part of the first step in the fifth embodiment of the present invention.

FIG. 12 is a sliding surface cross-sectional view showing another step of the first step in Embodiment 5 of the present invention.

FIG. 13 is a sectional view of a sliding surface showing a second step in the fifth embodiment of the present invention.

FIG. 14 is a sectional view of a sliding surface showing a third step in the fifth embodiment of the present invention.

FIG. 15 is a sectional view of a sliding surface showing a fourth step in the fifth embodiment of the present invention.

FIG. 16 is a sectional view of a sliding surface showing a fifth step in the fifth embodiment of the present invention.

FIG. 17 is a sectional view of a sliding surface showing a seventh step in the fifth embodiment of the present invention.

FIG. 18 is a schematic plan view showing an eighth step in the fifth embodiment of the present invention.

FIG. 19 is a sectional view of a sliding surface showing an eighth step in the fifth embodiment of the present invention.

FIG. 20 is a sectional view of a sliding surface showing a ninth step in the fifth embodiment of the present invention.

FIG. 21 is a sectional view of a sliding surface showing a tenth step according to the fifth embodiment of the present invention.

FIG. 22 is a sectional view of a sliding surface showing an eleventh step according to the fifth embodiment of the present invention.

FIG. 23 is a sliding surface cross-sectional view showing a part of another example of the eleventh step in the fifth embodiment of the present invention.

FIG. 24 is a sectional view of a sliding surface showing another step of another example of the eleventh step in the fifth embodiment of the present invention.

FIG. 25 is a sliding surface cross-sectional view showing a part of a twelfth process according to the fifth embodiment of the present invention.

FIG. 26 is a sectional view of a sliding surface showing another step of the twelfth step in Embodiment 5 of the present invention.

FIG. 27 is a sectional view of a sliding surface showing a fourth step in the sixth embodiment of the present invention.

FIG. 28 is a sectional view of a sliding surface showing a fifth step in the sixth embodiment of the present invention.

FIG. 29 is a sectional view of a sliding surface showing an eighth step in the sixth embodiment of the present invention.

FIG. 30 is a sectional view of a sliding surface showing a ninth step in the sixth embodiment of the present invention.

FIG. 31 is a sectional view of a sliding surface of a magnetoresistive thin-film magnetic head according to a sixth embodiment of the present invention;

FIG. 32 is a sectional view of a sliding surface showing a second step in another example of the sixth embodiment of the present invention.

FIG. 33 is a sectional view of a sliding surface showing a third step in another example of the sixth embodiment of the present invention.

FIG. 34 is a sectional view of a sliding surface showing a fourth step in another example of the sixth embodiment of the present invention.

FIG. 35 is a sectional view of a sliding surface showing a seventh step in another example of Embodiment 6 of the present invention.

FIG. 36 is a sliding surface cross-sectional view showing an eighth step in another example of Embodiment 6 of the present invention.

FIG. 37 is a sliding surface cross-sectional view showing a ninth step in another example of Embodiment 6 of the present invention.

FIG. 38 is a sectional view of a sliding surface showing a thirteenth step in another example of the sixth embodiment of the present invention.

FIG. 39 is a sectional view of a sliding surface showing a seventh step in the seventh embodiment of the present invention.

FIG. 40 is a sectional view of a sliding surface showing an eighth step in the seventh embodiment of the present invention.

FIG. 41 is a sectional view of a sliding surface showing a ninth step in the seventh embodiment of the present invention.

FIG. 42 is a sectional view of a sliding surface showing a tenth step according to the seventh embodiment of the present invention.

FIG. 43 is a sectional view of a sliding surface showing an eleventh step according to the seventh embodiment of the present invention.

FIG. 44 is a sectional view of a sliding surface of a magnetoresistive thin-film magnetic head according to Embodiment 7 of the present invention;

FIG. 45 is a sectional view of a sliding surface showing an eighth step in the eighth embodiment of the present invention.

FIG. 46 is a sectional view of a sliding surface showing a magnetoresistive thin-film magnetic head according to Embodiment 8 of the present invention;

FIG. 47 is a sectional view of a sliding surface showing a seventh step in another example of Embodiment 8 of the present invention.

FIG. 48 is a sectional view of a sliding surface showing a magnetoresistive thin-film magnetic head according to another example of the eighth embodiment of the present invention;

FIG. 49 is a schematic perspective view showing a conventional thin-film magnetic head.

FIG. 50 is a schematic front view showing a conventional thin-film magnetic head.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1, 93 Substrate 2 Insulating member 3, 94, 101, 121, 491 Lower shield layer 4, 131, 492 Lower gap insulating layer 5, 31, 41, 51, 71, 137, 147, 18
4, 376, 416, 493 Magnetoresistance effect element (GM
R element) 6, 32, 43, 52, 72, 82, 148, 183,
333, 374, 415, 494 Vertical bias layers 7, 34, 44, 53, 61, 74, 151, 172,
182, 281, 293, 341, 352, 372, 4
03, 413 seed layer 8, 35, 45, 54, 62, 75, 161, 171,
181, 291, 292, 342, 351, 371, 4
02, 412, 451, 471 Main carrier layers 9, 3
6, 46, 55, 76, 162, 173, 294, 35
3, 373, 404, 414, 495 Electrode lead layer 10, 57, 211, 431, 496 Upper gap insulating layer 11, 58, 221, 231, 261, 381, 44
1, 461, 481, 497 Upper shield layer 12, 174, 405 Playback track width 33, 42, 73, 81, 271, 301, 321, 3
32,375 ruthenium 56,64,77,391,401,411,452,
472 Antireflection layer 63, 141 Resist 91 Protective layer 92 Insulating layer 95 Two-dot chain line 111, 122 Lower shield insulating layer 123 First plane 132, 142 Antiferromagnetic layer 133, 143 Fixed magnetic layer 134, 144 Nonmagnetic layer 135 145 Free magnetic layer 136, 146 Cap layer 201, 421 Side insulating part 251, 262, 382, 442, 462, 482 Upper shield insulating layer 263, 383, 443, 463, 483 Second plane 311, 384, 444 , 464, 484, 490 Magnetoresistance effect type thin film magnetic head 331 Magnetoresistance effect element portion (GMR element portion) 498 Recording gap layer 499 Upper magnetic pole 500 Induction type thin film magnetic head portion 501 Winding coil

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat ゛ (Reference) H01L 43/12 G01R 33/06 R (72) Inventor Yukio Murakishi 1006 Kazuma Kazuma, Kadoma, Osaka Matsushita Electric Industrial F term (for reference) 2G017 AA00 AB07 AC09 AD55 AD63 AD65 5D034 BA03 BA08 BA21 BB12 DA07 5E049 AA09 BA12

Claims (8)

[Claims] 1. A magnetoresistive thin-film magnetic head having a magnetoresistive element and having an electrode lead layer provided in electrical contact with said magnetoresistive element, wherein a seed formed of tantalum nitride is provided. And a main carrier layer formed of cubic tantalum, the electrode layer having a configuration in which the nitrogen content of the seed layer is in a range of 33% to 40% (atm%). A magnetoresistive thin-film magnetic head characterized by applying a heat treatment at a processing temperature of 200 ° C. or more and a processing time of 1 hour or more after forming the lead layer. 2. A magnetoresistive thin-film magnetic head having a magnetoresistive element and an electrode lead layer provided in electrical contact with said magnetoresistive element, wherein said magnetoresistive element has A seed layer formed of tantalum nitride electrically connected to the effect element; and a main carrier layer formed of cubic tantalum, and having an electrode lead layer configured to have a nitrogen content of the seed layer. A magnetoresistive thin-film magnetic head, wherein the heat treatment is performed at a processing temperature of 200 ° C. or more and a processing time of 1 hour or more after the formation of the electrode lead layer. 3. An anti-reflection layer having a function of preventing reflection of light for exposure, on the electrode lead layer, wherein the anti-reflection layer is configured to react the main carrier layer and the seed layer with reactive ions. 3. The thin-film magnetic head according to claim 1, wherein the thin-film magnetic head is formed of a material that can be removed by an etchable reaction gas. 4. The thin-film magnetic head according to claim 3, wherein the material of the antireflection layer is tantalum nitride or titanium nitride. 5. The method according to claim 1, wherein the seed layer is 33% to 40% (at
forming a tantalum nitride having a nitrogen content of about 0.5% on the seed layer as a main carrier layer; and forming the tantalum nitride on the seed layer as a main carrier layer. Removing a part of the main carrier layer and the seed layer so that a part of the upper surface of the part is exposed; and performing a heat treatment at a processing temperature of 200 ° C. or more and a processing time of 1 hour or more. A method for manufacturing a magnetoresistive thin-film magnetic head. 6. The seed layer has a thickness of 33% to 40% (at
forming a film of tantalum nitride having a nitrogen content of 0.5% (m%) so as to be in contact with the magnetoresistive effect element portion; forming a tantalum film on the seed layer as a main carrier layer; Forming a film of tantalum nitride or titanium nitride on the main carrier layer as an anti-reflection layer for preventing the reflection of light from the main carrier layer; A step of removing a part of the prevention film, the main carrier layer and the seed layer; and a step of performing a heat treatment at a processing temperature of 200 ° C. or more and a processing time of 1 hour or more. A method for manufacturing a magnetic head. 7. A step of forming a ruthenium film so as to be in contact with the upper surface of the magnetoresistive element, and a nitrogen content of 33% (atm%) or more as a seed layer so as to be in contact with the upper surface of the ruthenium. A step of forming tantalum nitride having, a step of forming tantalum on the seed layer as a main carrier layer, and using a gas containing halogen such that a part of the upper surface of the ruthenium is exposed. Removing a part of the main carrier layer and the seed layer; and removing at least a part of the ruthenium using a gas containing at least oxygen so that a part of an upper surface of the magnetoresistive element is exposed. A method for manufacturing a magnetoresistive thin-film magnetic head, comprising: a step of removing; and a step of performing a heat treatment at a processing temperature of 200 ° C. or more and a processing time of 1 hour or more. 8. A step of forming tantalum nitride or titanium nitride on the main carrier layer as an anti-reflection film for preventing reflection of light for exposure, so that a part of the upper surface of the ruthenium is exposed. Removing a part of the antireflection film, the main carrier layer, and the seed layer by a reactive ion etching method using a gas containing halogen. A method for manufacturing the magnetoresistive thin-film magnetic head according to the above.