JP2001284732A - Multi-wavelength laser light-emitting device, semiconductor laser array element used therefor, and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a multi-wavelength laser light-emitting device that can emit a laser beam with multi-wavelength and high output. SOLUTION: First and second laser array layers that oscillate the different wavelength of a semiconductor laser array element are allowed to oppose each other, are laminated, and are arranged. In each, a main waveguide 121 is interlocked to a main waveguide 123 by an interlock waveguide 125, thus sharing resonators 122 and 124, matching both the wavelength and phase of laser beams that are oscillated from each of the main waveguides 121 and 123, phase-locking each laser beam for facilitating condensation by a condensing lens, and hence obtaining high output.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to optical recording, optical communication,
The present invention relates to a multi-wavelength laser light emitting device used for laser application equipment in welding and the like, and a semiconductor laser array element used for the device.

[0002]

2. Description of the Related Art For example, a laser light emitting device used for industrial purposes such as welding and drilling is required to have a high output. Therefore, a gas laser such as a carbon dioxide gas laser or an excimer laser or a solid laser such as a YAG laser is used. Is the mainstream.

[0003]

However, in the laser light emitting device of the above type,
Inevitably, the apparatus must be large, and particularly in the case of a gas laser, it is also necessary to install a gas cylinder for the gas, so that no matter how small the object of laser processing is, a large apparatus configuration must be achieved. . As a result, there is a problem that it is necessary to secure a wide installation space and that the price of the apparatus is unavoidably increased. In addition, gas lasers and solid-state lasers require large power consumption due to poor laser emission efficiency. Further, in the case of a gas laser, maintenance costs are increased due to replenishment of the gas.

[0004] On the other hand, the work to be laser-processed also
Various things have appeared along with the development of the material industry. In particular, a problem has arisen when a workpiece produced by mixing two materials having different laser absorptances depending on the wavelength is processed by the laser light emitting device as described above.
That is, the wavelength of the laser emitted from the gas laser or the solid-state laser is fixed to a specific single wavelength, and it is difficult to change the wavelength. For example, if the work is made of the materials A and B, and the material A has a high absorptance to the laser light of the wavelength α, but the material B has a low absorptance to the laser light of the wavelength, I do. In this case, the laser output has to be increased in order to melt the material B. However, in such a case, the temperature of the material A is excessively increased, and an unnecessary portion is melted. So, for example,
In the case where a hole is drilled in the work, there is a problem that the diameter of the hole becomes larger than the dimension and the processing accuracy is significantly deteriorated.

[0005] In such a case, it is preferable to use the material B at a wavelength β having a high absorptivity.
As described above, it is difficult to change the laser wavelength in a gas or solid multi-wavelength laser light emitting device.
In various other fields, there is a demand for a small, high-output, multi-wavelength laser application device.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and it is an object of the present invention to provide a laser-applied device that is small in size, has a relatively high laser output, and can output laser light of different wavelengths. Multi-wavelength laser light emitting device,
It is an object to provide a semiconductor laser array element used in the multi-wavelength laser light emitting device and a method for manufacturing the semiconductor laser array element.

[0007]

In order to solve the above-mentioned problems, a multi-wavelength laser light emitting device according to the present invention comprises a plurality of semiconductor laser array elements having different wavelengths of laser light to be output, and the plurality of semiconductor laser arrays. An optical element for condensing a plurality of laser beams emitted from the element at a predetermined position, wherein at least one semiconductor laser array element has a plurality of optical waveguides partitioned by a current block layer on a single substrate. One or more laser array layers formed and formed are provided, and at least two adjacent optical waveguides of at least one laser array layer are optically coupled to each other. As a result, the output laser light can be focused and a high output can be obtained.

Further, the multi-wavelength laser light emitting device according to the present invention is characterized in that one or a plurality of semiconductor laser array elements having different wavelengths of laser light to be output, and a plurality of lasers emitted from the one or a plurality of semiconductor laser array elements. An optical element for condensing light at a predetermined position, wherein at least one semiconductor laser array element is a laser array formed by arranging a plurality of optical waveguides partitioned by a current block layer on one substrate. It is characterized by including a plurality of layers, wherein the wavelengths of the laser beams emitted from the respective laser array layers are different, and at least two adjacent optical waveguides of at least one laser array layer are optically coupled to each other.

Further, the multi-wavelength laser light emitting device selects an adjusting means for driving the optical element to adjust a condensing position of laser light, and a laser array layer for emitting laser light of a designated wavelength. A laser driving means for exciting and a control means for controlling the adjusting means according to the wavelength of the emitted laser light are provided. As a result, a high output is obtained by converging the laser beams of the designated wavelengths to one point.

The optical coupling between the optical waveguides is performed via a coupling waveguide formed by removing a part of the current blocking layer between the optical waveguides in a groove shape. Further, the extension direction of the coupling waveguide intersects the extension direction of the optical waveguide. Further, at least two adjacent optical waveguides are formed to be curved, and the optical waveguides are optically coupled by merging in a part of the extending direction.

Also, on one substrate, a plurality of optical waveguides extending from opposing end surfaces of the substrate to a central portion are formed in parallel by being partitioned by a current blocking layer, and the first of the plurality of optical waveguides is formed. The one extending from the end face of the substrate and the one extending from the end face of the second substrate are alternately positioned on the substrate surface in a direction perpendicular to the extending direction of the optical waveguide, whereby optical coupling between the optical waveguides is performed. It is characterized by.

Further, the semiconductor laser array element according to the present invention comprises: a first laser array layer formed by arranging a plurality of first laser light oscillating sections partitioned by a first current block layer; A second laser array layer formed by arranging a plurality of second laser light oscillating sections partitioned by a second current block layer is arranged to face each other, and the first and second laser array layers are arranged. The wavelengths of the laser beams emitted from the light sources are different. Thereby, laser beams having different wavelengths can be output from one semiconductor laser array element.

Also, at least two adjacent ones of the first laser light oscillating portions in the first laser array layer and at least two adjacent ones of the second laser light oscillating portions in the second laser array layer The two are optically coupled to each other. This makes it possible to increase the output of the output laser light. The optical coupling between the first laser light oscillating units and the optical coupling between the second laser light oscillating units are such that a part of the first current block layer and a part of the second current block layer are formed in an elongated groove shape. It is performed by a coupling waveguide formed by being removed.

The optical coupling between the first laser light oscillating portions and the optical coupling between the second laser light oscillating portions are performed by a structure formed to be curved so as to merge in a part of the extending direction. It is characterized by the following. In addition, the first
The optical coupling between the laser light oscillating units and the optical coupling between the second laser light oscillating units extend from the first end faces alternately located in the direction perpendicular to the extending direction, and extend from the second end faces. It is characterized in that it is performed between things.

The optical coupling between the first laser light oscillating portions and the optical coupling between the second laser light oscillating portions are caused by the stain of the laser light in the first current blocking layer and the second current blocking layer. It is characterized in that it is performed by making the outgoing regions contact each other or overlap each other. Further, an electrode having a first polarity is formed so as to sandwich the first laser array layer and the second laser array layer, and is formed at a boundary between the first laser array layer and the second laser array layer. An electrode having a second polarity different from the first polarity is formed at an end of the surface of the conductive layer.

Further, an end window structure is provided at an end of the device facing an end of the first laser array layer and an end of the second laser array layer. Further, an insulating portion is provided at a portion where power is supplied on the surface of the end face window structure. Further, the first current blocking layer and the second
The forbidden band width of the current block layer of the first current block layer and the portion of the first laser light oscillation portion and the second laser light oscillation portion located between the second current block layer. The first current blocking layer which is larger than that of the active layer and whose refractive index of the first current blocking layer and the second current blocking layer is located between the first current blocking layers and between the second current blocking layers. It is smaller than those of the laser light oscillating unit and the second laser light oscillating unit.

The semiconductor laser array device may further include a plurality of the semiconductor laser array devices and light feedback means for causing a laser beam emitted from one semiconductor laser array device to enter a laser light oscillation section of another semiconductor laser array device. . Further, in the method of manufacturing a semiconductor laser array element, a first step of forming a first laser array layer in which a plurality of laser light oscillating portions are arranged in line, and a step of facing the first laser array layer ,
A second step of forming a second laser array layer in which a plurality of laser light oscillating units are arranged in a row, wherein the second step includes the steps of: MOCVD or MB on the first laser array layer.
After forming the optical waveguide layer using the E method, the second laser array layer is formed by changing the components so as to generate a laser beam having a different wavelength from the laser beam generated from the first laser array layer.
Is formed by the same method as that of the laser array layer.

Further, in the method of manufacturing a semiconductor laser array element, a first step of forming a first laser array layer in which a plurality of laser light oscillating portions are arranged, A second step of forming a second laser array layer provided; and a third step of bonding the first laser array layer and the second laser array layer. Forming an optical waveguide layer on at least one of the bonding surfaces of the first laser array layer and the second laser array layer, and then interposing the first laser array layer through the optical waveguide layer.
And laminating said second laser array layer with said second laser array layer.

Further, before the third step, a fourth step of subjecting at least one of the optical waveguide layer, the first laser array layer, and the second laser array layer to a hydrophilic treatment is performed. In addition, the third step is characterized in that the heat treatment is performed in the presence of hydrogen.

[0020]

Embodiments of the present invention will be described below with reference to the drawings. First Embodiment (1) Configuration of Multi-Wavelength Laser Light-Emitting Device FIG. 1 is a schematic diagram showing a configuration of a main part of a multi-wavelength laser light-emitting device according to a first embodiment.

As shown in FIG. 1, a multi-wavelength laser light emitting device 1 includes a light source section 10 for emitting laser lights LA and LB having different wavelengths, and laser lights LA and LB emitted from respective semiconductor laser arrays 11 and 12. A collimating section 20 for parallelizing each other, a reflecting section 30 for reflecting each of the laser beams LA and LB so as to translate in the same direction, and a predetermined focusing on the optical axis for the translating laser beams LA and LB. A condenser lens 40 for condensing light at a position, a condenser lens drive unit 50 for moving the condenser lens 40 in the optical axis direction, and a condenser lens drive unit 50
And a control unit 51 for controlling the operation of. In general, the condenser lens usually includes a plurality of lens groups, but in the present embodiment, only one condenser lens 40 is shown.

The light source unit 10 is provided with laser beams L having different wavelengths.
Semiconductor laser array elements 11 and 12 that translate and emit a plurality of A and LB, respectively, are arranged in parallel. Each of the semiconductor laser array elements 11 and 12 has an active layer having a different composition, as described later, and emits laser light having a wavelength in the red and infrared regions. The laser beams LA (red) and LB (infrared) are emitted in a state where their phases and wavelengths are matched (hereinafter, referred to as “phase locked”), whereby a high output can be obtained. Have been.

The laser beams LA and LB are incident on the hologram optical components 21 and 22 in the collimator 20, respectively. The hologram optical components 21 and 22 are designed so that light incident while diffusing from a point light source at a predetermined position is made into parallel light, whereby the laser beams LA and LB passing through the hologram optical components 21 and 22 are converted. It becomes parallel light. Note that a collimator lens or the like may be used as a means for converting the light into parallel light.

The reflecting section 30 outputs the laser light L
A mirror 31 that reflects A in the direction of the condenser lens 40 and a half mirror 32 that also reflects the parallel laser light LB in the direction of the condenser lens 40 are provided. Half mirror 3
Reference numerals 1 and 32 denote known optical components that transmit a part of incident light and reflect a part of the light according to an incident angle.
With respect to the chief rays of the laser beams LA and LB, the incident surface is 4
It is fixed at an angle of 5 °.

The laser beam LA reflected by the mirror 31 is transmitted through the half mirror 32,
2 and travels toward the condenser lens 40 in a state substantially parallel to the laser beam LB reflected by the laser beam LB. Therefore, the laser beams LA and LB emitted from different positions are almost overlapped with each other. They can travel in the same direction.

The condenser lens 40 receives the incident laser light L
A and LB are condensed at predetermined light condensing positions on the optical axis. However, since the light condensing positions on the optical axis are different due to the difference in the wavelength of incident light (axial chromatic aberration) as is well known, The image positions are different points SP1 (red) and SP2 (infrared). Therefore, in this embodiment, the position of the condenser lens 40 in the optical axis direction is adjusted according to the wavelength of the laser to be used, and even if the laser beam is changed to a laser beam of a different wavelength, the beam waist of the laser beam with respect to the processed workpiece is This enables stable machining without changing the position. That is, the condensing lens 40 is held movably in the direction of the optical axis, and the condensing lens 40 is driven in the axial direction by the condensing lens driving section 50 in accordance with the wavelength of the laser light to be used. Are controlled so that the light condensing positions of the light beams are always the same.

For example, in order to always focus light on the point SP1, when the laser light is switched from red to infrared, the condensing lens 40 is moved along the optical axis by a distance d as shown in FIG.
What is necessary is just to move to 0 direction. Note that the condenser lens driving unit 5
Reference numeral 0 denotes a known finely adjustable linear actuator, for example, a screw feed mechanism using a ball screw. When the condenser lens is composed of a plurality of lens groups, it is possible to adjust the focal position by moving at least one lens in the optical axis direction.

The control unit 51 controls the amount of lens driving by the condenser lens driving unit 50, and controls the semiconductor laser array elements 11 and 12 via the laser diode driving unit 52.
Control the emission of light. This means that the driving of each of the semiconductor laser array elements 11 and 12 is switched so as to output a laser beam having a wavelength specified according to the intended use, and the control unit 51 provides the control unit 51 with the wavelength of the semiconductor laser array element to be driven to emit light. Accordingly, the driving amount of the condenser lens 40 is programmed in advance so that the focal position does not change even if the wavelength of the laser beam is changed. When a stepping motor is used as a drive source of the condenser lens drive unit 50, the drive amount can be easily controlled by the number of drive pulses.

FIG. 2 is a diagram showing a modification of the multi-wavelength laser light emitting device. 1 in that a hologram optical component 41 having a light-condensing function is provided instead of the light-reflecting portion 30 in FIG. Since the hologram optical component 41 is less likely to cause optical distortion even if the aperture is larger than the lens, it is not necessary to use the half mirror 32 so that the laser LA and the laser LB almost travel along the same optical path as shown in FIG. However, since the light can be incident with the space provided, the size can be further reduced. This also reduces the number of parts and the number of assembly steps, which also contributes to cost reduction. Further, in the configuration using the half mirror 32 as shown in FIG. 1, since the half mirror 32 reflects a part and transmits a part, the loss of the light amount of the laser beams LA and LB is large. According to this, power can be saved without such a concern.

In this arrangement, however, axial chromatic aberration occurs due to the difference in the wavelength of the laser beam used.
3, the hologram optical component 41 must be moved in the axial direction according to the wavelength of the emitted laser beam. Since the configuration of this adjustment is made in the same manner as in the case of FIG. 1,
Description is omitted.

Each of the semiconductor laser array elements 11 and 12
With the configuration described below, high-power laser light can be emitted, and the size of the device itself is very small, so that it is easy to miniaturize the device and it is possible to irradiate different wavelengths using the same optical system. It becomes possible. <Structure of Semiconductor Laser Array Element> FIG. 3 is a perspective view showing the structure of the semiconductor laser array element 11 for emitting the red laser. For the semiconductor laser array element 12 that emits an infrared laser, GaIn
Since the compositions of P and AlGaInP are only different from GaAs and GaAlAs, respectively, the description is omitted, and only the semiconductor laser array element 11 will be described below.

The semiconductor laser array element 11 is of an array structure in which a plurality of red semiconductor laser elements having a real refractive index waveguide structure are arranged in rows, and an n-type GaAs substrate 101 is provided with an n-type
GaAs buffer layer 102 and n-type AlGaInP cladding layer 10
3, a GaInP / AlGaInP quantum well structure active layer 104, p
AlGaInP cladding underlayer 105, n-type AlGaInP current blocking layer 106, p-type AlGaInP cladding buried layer 107
And a p-type GaAs cap layer 108 (heat sink) are sequentially laminated, and a Cr / Pt
P-type electrode 109 formed by laminating three layers of Au / Au, and n-type planar electrode formed by laminating three layers of AuGe / Ni / Au on the back surface of n-type GaAs substrate 101. Mold electrode 110
And In the above structure, the current injected from the p-type electrode 109 corresponds to the n-type AlGaInP current blocking layer 106.
The current flows narrowly through the current channel formed by the p-type AlGaInP cladding buried layer 107, and laser oscillation occurs in the GaInP / AlGaInP quantum well structure active layer 104 provided thereunder.

The n-type AlInP current blocking layer 106 and the p-type AlGaInP cladding buried layer 107 will be described in detail below. FIG. 4 is a perspective view of the internal structure in FIG. 3 seen from above. As shown in the figure, the n-type AlInP current blocking layer 106 is formed of a p-type AlGaInP cladding underlayer 105.
It is composed of a plurality of stripes 106A formed at regular intervals on the surface of FIG. And p-type A
The lGaInP cladding buried layer 107 (FIG. 3) covers the n-type AlInP current block layer 106 and is buried between the stripes 106A.

Next, of the stripes 106A, the stripes 106C other than the stripes 106B located at both ends in the row direction are obliquely removed at the center in the extending direction, so that the stripes 106C have an angle with respect to the extending direction of the stripes. A discontinuous portion 106D that runs in an oblique direction is formed.
In this discontinuous portion 106D, a p-type AlGaInP cladding burying layer 107 is buried, and adjacent p-type AlGaInP cladding burying layer portions 107A located between adjacent stripes 106A.
Are connected to each other to form a connection waveguide 107C.

Each p-type AlGaInP cladding buried layer portion 107A located between adjacent stripes 106A serves as a current channel, and a P channel is formed between an active layer portion located therebelow.
An N junction is made. Each of the p-type AlGaInP cladding buried layer portions 107A becomes a part of a laser light waveguide. Hereinafter, this portion is referred to as a main waveguide 107B. The connection waveguide 107C also serves as a current channel, and has a PN junction with an active layer located therebelow. Then, the coupling waveguide 107C and the main waveguide 107B are coupled to each other. By connecting the adjacent waveguides with each other by the connecting waveguides in this manner, the laser light oscillated from each laser oscillation unit is phase-locked, as described later, and a high-power laser light is output while being a semiconductor laser. Can be output.

Further, as shown in FIG. 3, at least both end portions of the waveguide main path and a surface portion facing the waveguide region where the laser light is guided, including the vicinity thereof, and both ends of the surface of the p-type electrode portion are covered. Zn is diffused on the outer surface of the semiconductor laser array element 100 so as to cover the
The end windows are formed by the formation of 11 and 112. Thus, the configuration is such that absorption of laser light at the end of the waveguide main path is suppressed and heat generation is suppressed.

Further, the Zn diffusion portions 111, 1
An SiO ₂ insulating layer 113 is formed in a portion located above the twelve p-type electrodes 109. With this configuration, the end face 1
It is configured to eliminate the power supply at 14 and 115 to further promote the prevention of heat generation at that portion. The Zn diffusion unit 1
11 and 112 are provided so as to extend to a portion covering the n-type electrode 110, and SiO _{2 is}
An insulating layer can also be provided.

Further, while suppressing the absorption of laser light in the n-type AlInP current blocking layer 106 and effectively confining the light by the actual refractive index difference, the n-type AlInP current block layer 10
6 is wider than that of the active layer, and the n-type
The material is selected so that the refractive index of the AlInP current blocking layer 106 is smaller than that of the p-type AlGaInP cladding underlayer 105. That is, the p-type AlGaInP cladding underlayer 105 is made of AlGaInP, and the n-type AlInP current block layer 106 is made of AlInP.

Although not shown, the end face from which the laser beam is emitted is the end face 114 on the near side in the drawing of FIG. 3, and the end face 114 is not emitted from the opposite end face 115.
Is formed with a low reflectivity film having a reflectivity of about 1 to 15%. As a material of this low reflectance film, Al
₂ O ₃ , SiO ₂ , Si ₃ O ₄ , TiO _{2 and the} like can be used, but not limited thereto. Also, the end face 115
Is formed with a high reflectivity film having a reflectivity of about 70 to 98%. This high reflectance film is made of Al ₂ O ₃ , SiO _2
2 , a low-refractive-index dielectric film made of a material selected from Si ₃ O _{4 and the} like and a high-refractive-index dielectric film selected from TiO ₂ , amorphous Si, hydrogenated amorphous Si and the like are alternately and repeatedly deposited in two or more layers. However, the present invention is not limited to this.

<Method of Manufacturing Semiconductor Laser Array Element 11>
FIG. 5 is a process chart showing a method for manufacturing the semiconductor laser array element 11. Elements other than the n-type GaAs substrate 101 are sequentially formed by metal organic chemical vapor deposition (hereinafter, referred to as MOVPE). Specifically, layers up to the p-type AlGaInP cladding underlayer 105 are sequentially formed on the n-type GaAs substrate 101 (step 1). Next, an n-type AlInP current blocking layer 106 is formed on the surface of the p-type AlGaInP cladding underlayer 105.
Is formed (Step 2). The formation of this block layer is performed by first forming a material constituting the block layer and then performing liquid phase etching in a predetermined pattern. Thereafter, similarly, the p-type AlGaInP cladding buried layer 1 is sequentially formed by the MOVPE method.
Each layer such as 07 is sequentially formed (step 3).

FIG. 6 is a schematic diagram for explaining in detail the method of forming the n-type AlInP current blocking layer 106 in the above step 2. As shown in this figure, first, FIG.
, A material layer 106E constituting the n-type AlInP current blocking layer 106 is formed on the surface of the p-type AlGaInP cladding underlayer 105.

Next, in FIG. 6B, a mask MA on which a predetermined pattern is formed is formed in close contact with the surface of the material layer 106E by photolithography, and the mask MA is formed.
By performing liquid phase etching on MA, n-type AlInP
The pattern of the current block layer 106 is formed. Thus, the n-type AlInP current block layer 106 having the above-described pattern is formed.

<Operation / Effect in Semiconductor Laser Array Element 11> According to the semiconductor laser array element 11 having the configuration described above, laser light resonates between adjacent waveguide main paths 107B as described below. And phase locking is achieved. FIG. 7 is a schematic view of a resonator specifically explaining the phase lock operation (resonance operation).

As shown in the figure, in one waveguide main path 121, a resonator 1 formed in a direction in which the waveguide main path extends.
22 and the resonator 124 formed in the other main waveguide 123 adjacent to the main waveguide in the direction in which the main waveguide extends, are connected by the connecting waveguide 125, so that the whole In addition to the resonator 122 and the resonator 124, the resonator 12
4 and a resonator 12 including a coupling waveguide 125.
It is considered that No. 6 was formed.

Therefore, separate waveguide main paths 121 and 12
The laser beams oscillated from 3 are optically coupled to each other to match both the wavelength and the phase thereof, and the respective laser beams are phase-locked. Therefore, in FIG.
The waveguides 07B are connected by the connection waveguide 107C and share a resonator, so that the adjacent main waveguides perform laser light phase lock. For this reason, it is possible to match both the wavelength and the phase of the laser light in each of the waveguides 107B without having to arrange each of the waveguides disposed on one substrate in close proximity (phase locked). ),
In the focused spot SP1 (FIGS. 1 and 2), since the laser beams do not interfere with each other due to the phase shift, high-power laser beams are obtained corresponding to the number of laser oscillation portions provided. be able to.

In addition, since the technique of causing each element arranged on one substrate to be located close to each other, which causes heat generation, is not employed at all, it is possible to suppress heat generation at each laser element part. Can also. In addition, since there is no method of positioning each element arranged on one substrate close to each other, there are few design restrictions.

<Regarding the Angle of the Connecting Waveguide> In order for adjacent waveguides to share a resonator, the extending direction of the connecting waveguide should intersect at any angle with the longitudinal direction of the waveguide. It is also an important factor. In other words, if the connecting waveguide is formed in a direction perpendicular to the extending direction of the main waveguide, light is scattered at a corner where the two main waveguides are connected to each other. By forming the connecting waveguide at an angle to the extension direction of the main path, the scattering of light at the corners is suppressed, and the resonator is effectively shared between the adjacent main paths. It is possible to do. Therefore, it is desirable that a portion near both ends of the coupling waveguide forms a gentle curve near a coupling portion with the waveguide main line to which the end is coupled, so that the intersection angle is gradually reduced. Further, it is desirable that the waveguide and the coupling waveguide completely intersect from the end of the waveguide to the inside in order to share the resonator.

<Regarding Modified Example of Connection Waveguide> In the above description, adjacent waveguide main lines are connected by one connection waveguide. However, the present invention is not limited to this, and a plurality of connection waveguides are connected. You can also. In the above description, as shown in FIG. 4, the connecting waveguides are formed so as to be substantially parallel to each other at the center of the array. It may be lined up. By doing so, all the waveguides are shared, and it is considered that phase locking can be performed more effectively.

Also, as shown in FIG.
01 may be formed in an X-shape where they are joined together at the center in the stretching direction. With such an X-shape, an effect is obtained in which laser beams resonate in the waveguide main paths 301A (positioned on the left side in the drawing) and 301B (positioned on the right side in the drawing) adjacent to each other. When a plurality of X-shaped waveguide main paths 301 are arranged in parallel, one waveguide main path 301A and the other waveguide main path 301B are provided close to each other, and the waveguide in the horizontal direction is provided. When a part of the regions is in contact with or overlaps with each other, a so-called resonator is shared between adjacent X-shaped waveguide main paths 301. As a result, the phase can be locked in all the waveguide paths 301.

Further, as shown in FIG. 9, a plurality of waveguide main paths 403 and 404 extending from the opposing ends to the vicinity of the center may be provided in parallel. In this case, it is necessary to slightly increase the transmittance so that the laser light is emitted from the opposite end faces. Here, if the distance d in the long side direction of the waveguides 403 and 404 is set to a distance such that a part of the waveguide regions is in contact with or overlaps with each other, the laser beams resonate in the waveguides 403 and 404. The effect of mutual interaction is obtained. Therefore, it is possible to phase-lock the laser light in each waveguide.

In the above description, the connecting waveguides are connected so as to connect all adjacent waveguides. However, the present invention is not limited to this, and at least two waveguides out of a plurality of waveguides are connected. The connection is also included in the present invention. In this case, in order to perform the phase lock, the uncoupled waveguide main paths need to be close to each other so that a part of the waveguide region in the horizontal direction is in contact with or overlaps with each other.

However, the location of each element disposed on one substrate, which is a factor of heat generation, is not located in all of the waveguide main paths. Therefore, the degree of heat generation in each laser element portion is limited. It can be said that it is lower than the case where all the elements are brought close to each other as in the related art. In the above description, the coupling waveguide is a laser that guides adjacent waveguides by connecting the waveguides structurally completely across the current blocking layer in the width direction of the current blocking layer. Although the light is coupled, even if it is not structurally coupled, a part of the current blocking layer is removed to make it discontinuous so that laser light guided through the main waveguide can be optically coupled to each other. With such a configuration, the above-described functions and effects can be exhibited.

With the above configuration, the laser light LB emitted from each of the semiconductor laser array elements 11 and 12 is phase-locked to the wavelength corresponding to each element. Also, since the position of the condenser lens 40 or the hologram optical component 41 is automatically adjusted in the multi-wavelength laser light emitting device 1 or 2, the laser light condenser lens 40
Can be corrected. Therefore, no matter which wavelength is selected, the phase-locked laser light of the wavelength can be focused on one spot of the spot SP1, and the output of the laser light is increased in proportion to the number of laser oscillation parts provided. it can.

Therefore, for example, when the composite member is used for drilling holes, high-power laser beams having different wavelengths corresponding to the light absorption wavelength regions of the respective substances constituting the composite member can be alternately used in a short time. In this case, since the respective members are uniformly dissolved, the diameter of the hole can be formed to a predetermined size. In the above embodiment, the present invention has been described by taking a red semiconductor laser as an example. However, in addition to the red laser, semiconductor lasers such as a blue laser, a green laser, and an infrared laser may be similarly used. The concept of causing the laser light to resonate is applied.

(Second Embodiment) In the first embodiment, the semiconductor laser array elements 11, 12 for emitting laser beams of a single wavelength to the light source unit 10 shown in FIGS. 1 and 2, respectively. However, in the second embodiment, a single semiconductor laser array element capable of emitting two types of phase-locked laser beams to the light source unit 10 is used. ing.

<Overall Configuration> The multi-wavelength laser light emitting device according to the second embodiment is a semiconductor laser array element 12 and a dedicated laser diode array element shown in FIGS. 1 and 2 of the first embodiment. (In FIG. 1, the hologram optical component 22, the half mirror 32, and FIG.
, The hologram optical component 22) is omitted, the semiconductor laser array element is provided with two laser array layers instead of the semiconductor laser array element 11, and configured so that the wavelength of the laser light wave-hung from each layer is different. 13 are not provided here.

<Overall Configuration of Semiconductor Laser Array Element 13> FIG. 10 is a cross-sectional view of the semiconductor laser array element 13. The semiconductor laser array element 13 has a configuration in which the semiconductor laser array elements as described in the first embodiment are joined in two rows facing each other. FIG. 11 is a partially cutaway perspective view of the semiconductor laser array element 13.

The semiconductor laser array element 13 has a real refractive index waveguide type structure in which two so-called single heterostructures are formed on one substrate, and oscillates laser beams of two wavelengths, red and infrared. It is to let. The semiconductor laser array element 13 is formed by laminating a plurality of laser light oscillating units 700 and 710 each having a long single heterostructure in the vertical direction of the substrate on one substrate, and furthermore, is parallel to the substrate surface. In each direction, the laser light oscillating units 700 and 710 are structures arranged in a row on the same plane. Here, a plurality of laser light oscillating units 70 are arranged in a direction parallel to the substrate surface.
A portion where 0s are arranged in a row is called a first laser array layer 701, and a portion where a plurality of laser light oscillating portions 710 are arranged in a direction parallel to the substrate surface located thereon is a second laser array layer. 711.

Specifically, the semiconductor laser array element 13
Are an n-type GaAs substrate 201 and an n-type GaAs buffer layer 202
, An n-type AlGaInP first cladding layer 203, and GaInP / AlGa
InP quantum well structure first active layer 204, p-type AlGaInP second active layer
Cladding layer 205 and n-type AlInP first current blocking layer 2
06, a p-type AlGaInP third cladding layer 207, and an n-type GaAs
lAs second current blocking layer 208, p-type GaAlAs fourth cladding layer 209, GaAs / GaAlAs quantum well structure second active layer 210, n-type GaAlAs fifth cladding layer 211, n-type Ga
The structure in which the As contact layer 212 is sequentially laminated has n
Type electrodes 213A and 213B and p-type electrodes 214A and 214B
It is provided with. The structure excluding the electrodes is hereinafter referred to as an array structure precursor for convenience.

The n-type electrodes 213A and 213B are planar electrodes formed on the upper and lower surfaces of the array structure precursor.
The mold substrate 213A is an electrode having a structure in which three layers of AuGe / Ni / Au formed on the back side are laminated, and the n-type substrate 213B
Is an electrode having a structure in which three layers of AuGe / Ni / Au formed on the surface side are laminated. A pair of p-type electrodes 214A and 21
4B are band-shaped electrodes provided at two places on the left and right of the array structure precursor, and are formed by cutting off the left and right ends of the array structure precursor from the upper part to the vicinity of the center of the p-type GaAlAs third cladding layer 209. It is formed on the surface 215A of the two step portions 215.

With the above structure, the laser light oscillation section 700
Is formed from the n-type AlGaInP first cladding layer 203 to the p-type AlGaInP
The laser light oscillating section 710 is composed of the p-type AlGaInP third cladding layer 207 to the n-type GaAlAs fifth cladding layer 211. With the above configuration, the current injected from the p-type electrodes 214A and 214B is
, And laser oscillation occurs in the GaInP / AlGaInP quantum well structure first active layer 204 and the GaAs / GaAlAs quantum well structure second active layer 210. The laser light oscillation units 700 and 710 are switched by a control unit (not shown) so as to output each wavelength via an LD driving unit.

<Detailed Structure of Semiconductor Laser Array Element 13>
Hereinafter, the details of the first laser array layer 701 and the second laser array layer 711 will be described. As shown in FIGS. 10 and 11, first, the n-type AlInP first current block layer 206 in the lower first laser array layer 701 is formed.
Has a side portion 206A, a plurality of stripes 206B arranged in parallel with each other, and a discontinuous portion 206C at the center in the extending direction. Then, a p-type AlGaInP third cladding layer 207 is buried in the stripe-like grooves 206D formed between the side portions 206A and the stripes 206B and between the stripes 206B and the discontinuous portions 206C, and the current blocking layer 206 is formed so as to cover the entirety.

The n-type Ga in the second laser array layer 711 located above the first laser array layer 701
Similarly to the n-type AlInP first current block layer 206, the AlAs second current block layer 208 has both side portions 208A, a plurality of stripes 208B arranged in parallel with each other, and a discontinuous portion 208C at the center in the extending direction. Having. Then, the p-type GaAlAs fourth cladding layer 209 is formed on the both sides 2.
08A and stripe 208B and stripe 208
B, embedded in the striped groove 208D and the discontinuous portion 208C, and
08 is formed.

As a result, the laser light oscillating units 700 and 710 including the elements in which the laser light is distributed in the portions including the active layer in each laser array layer, the n-type cladding layer, and the like are formed. At the time of laser light oscillation, the groove 2
06D, 208D and the cladding layer portions embedded in the discontinuous portions 206C, 208C are supplied with power from the element portions corresponding in the vertical direction. Then, the grooves 206D, 208D and the discontinuous portions 206C, 208C in which the respective cladding layers are embedded become a part of the waveguide of the laser light. Hereafter this part is the first
In the laser array layer 701, a portion corresponding to the groove 206D is referred to as a main waveguide 206E, and a portion corresponding to the discontinuous portion 206C is referred to as a coupling waveguide 206F.
In FIG. 11, the portion corresponding to the groove 208D is
8E and the portion corresponding to the discontinuous portion 208C are connected to the connecting waveguide 2
Call it 08F.

The first laser array layer 701 and the second
The position of the laser array layer 711 is determined so that the laser light oscillation units 700 and 710 are arranged in the same position in the vertical direction and in parallel. Further, the forbidden band width of the first current blocking layer and the second current blocking layer is the first band width.
Are larger than those of the active layers of the respective laser light oscillating portions located between the current block layers and the second current block layers, and the refractive indices of the first current block layer and the second current block layer are larger. The first current blocking layers and the second
Are formed of a material smaller than that of each laser light oscillating portion located between the current block layers. Thus, a light confinement effect is exhibited by the actual refractive index difference, and a loss of laser light due to absorption of laser light in the current blocking layer can be reduced. The end face from which the laser light is emitted is an end face 21 on the near side in the drawing of FIG.
6, a low reflectance film of about 1 to 15% is formed on the surface of the end face 216 so as not to be emitted from the end face 217 on the opposite side. As a material of this low reflectance film, Al
₂ O ₃ , SiO ₂ , Si ₃ O ₄ , TiO _{2 and the} like can be used, but are not limited thereto. Also, end face 2
A high reflectivity film having a reflectivity of about 70 to 98% is formed on the surface of No. 17. This high reflectance film is made of Al ₂ O ₃ , S
By alternately repeating two or more layers of a low-refractive-index dielectric film made of a material selected from iO ₂ and Si ₃ O ₄ and a high-refractive-index dielectric film selected from TiO ₂ , amorphous Si, hydrogenated amorphous Si and the like. It can be formed by deposition, but is not limited to this.

<Method of Manufacturing Semiconductor Laser Array Element 13>
12 to 14 are process diagrams showing this manufacturing method. First, as shown in FIG.
Prepare 01. Next, as shown in FIG. 12B, the layers up to the p-type GaAlInP first cladding layer 205 are sequentially formed on the surface of the n-type GaAs substrate 201 by MOCVD or MB.
The layers are formed by using the E method. In the following, although not particularly specified, the formation of each layer in each of the following steps is similarly performed by M
It is formed by using the OCVD method or the MBE method.

Next, as shown in FIG.
A material layer 206G before patterning the AlP current first block layer 206 is formed. Next, as shown in FIG. 12 (4), a mask layer MA1 having an opening having a pattern opposite to the pattern in which the n-type InAlP current first block layer 206 is formed.
To form Next, as shown in FIG. 12 (5), a pattern of the n-type InAlP current first block layer 206 is formed on the material layer 206G by performing liquid phase etching from above the mask layer MA1. After that, the mask MA1 is removed.

Next, as shown in FIG.
A GaInP third cladding layer 207 is formed. Next, FIG.
As shown in (7), the n-type GaAlAs second current blocking layer 2
08 material layer 208G is formed. Next, FIG.
As shown in FIG. 7, a mask layer MA2 having an opening having a pattern opposite to that of the formation pattern of the n-type GaAlAs current second block layer 208 is formed.

Next, as shown in FIG. 13 (9), the n-type GaAlAs current second block layer 208 is formed on the material layer 208G by performing liquid phase etching from above the mask layer MA2.
Is formed. After that, the mask MA2 is removed. Next, as shown in FIG. 14 (10), layers from a p-type GaAlAs fourth cladding layer 209 to an n-type GaAs contact layer 212 are sequentially laminated and formed.

Next, as shown in FIG.
A mask MA3 is formed on the surface of the GaAs contact layer 212 except for left and right ends. Next, as shown in FIG. 14 (12), the left and right ends of the n-type GaAs contact layer 212 and the p-type AlGaInP third cladding layer 207 located thereunder are subjected to liquid phase etching from above the mask MA3. The steps are removed to form the step 215A. After that, the mask MA3 is removed.

Through the above steps, the array structure precursor is formed. Next, as shown in FIG.
Type electrodes 213A and 213B and p-type electrodes 214A and 214B
Is formed at a predetermined portion to complete the semiconductor laser array device. <Operation / Effect in Semiconductor Laser Array Element 13> According to the semiconductor laser array element 13 having the above-described structure, the first laser array layer 701 and the second laser array are provided in the same manner as in FIG. 7 of the first embodiment. The main waveguides 206E and 208E in the layer 711 are connected to each other by the connecting waveguide 20.
6F and 208F, the laser beam can be phase-locked in each of the first laser array layer 701 and the second laser array layer 711. Therefore, the laser light emitted from the laser oscillation unit on the same layer is phase-locked, so that the laser light does not interfere so as to cancel each other out of the focused spot due to a phase shift. A high-power laser spot can be obtained in accordance with the number of light oscillation portions. In addition, since the laser oscillation units that emit the respective wavelengths are provided very close to each other, it is possible to share the optical components of the laser light for each wavelength. Therefore, by using the semiconductor laser array element 13, the number of the hologram optical components 21 and the half mirrors 31, 32 can be reduced as compared with the first embodiment, so that the cost is excellent.

<Modification of Second Embodiment> As a modification of the second embodiment, the following embodiment can be carried out. In the second embodiment, the semiconductor laser array is used. In the method of manufacturing the element 13, each layer is integrally formed by using the MOCVD method or the MBE method. However, two structures including the first laser array layer 701 and the second laser array layer 711 manufactured in advance are used. It may be formed by laminating.

FIG. 15 is a process chart showing a manufacturing method according to this modification. Next, FIG. 12 (1) to FIG. 13 (6)
15 are performed in accordance with the composition of each layer of the first laser array 701 layer and the second laser array layer 711, and FIG.
As shown in (1), array structure precursors 500, 510
Is prepared. Next, as shown in FIG. 15 (2), the p-type AlGaInP third cladding layers 207 of the array structure precursors 500 and 510 are opposed to each other, and the laser light oscillating portions are aligned and overlapped. And heat-bonded to bond by hydrogen bonding.

Prior to the superposition, two array structure precursors 500 and 510 to be bonded are to be bonded.
After cleaning the surface of the p-type AlGaInP third cladding layer 207 and removing the natural oxide film, a hydrophilic treatment, that is, the surface is terminated with OH groups. Lamination of the wafers subjected to the hydrophilic treatment is desirable because they are integrated by hydrogen bonding even at room temperature, and the strength at the bonded portion is improved.

In the case where the hydrophilic treatment is performed as described above, if the heat treatment is performed in the presence of hydrogen, both array structure precursors 500 and 510 can be more firmly integrated. Next, the steps shown in FIGS. 14 (10) to 14 (13) are performed to complete the semiconductor laser array element as shown in FIG. 15 (3). In the semiconductor laser array element 13 according to the second embodiment, the main waveguides 206E and 208E in the first laser array layer 701 and the second laser array layer 711 are connected by connecting waveguides 206F and 208F, respectively. However, one or both of the coupling waveguides may be formed in the shape described in the section <Modifications of the coupling waveguide> in the first embodiment. The first laser array layer 7 can be formed in this manner.
01 and the second laser array layer 711, respectively.
As described above, the laser light can be phase-locked, and the output can be increased by condensing the phase-locked laser light.

In the second embodiment, the first laser array layer 701 and the second
Although layers having different compositions are formed in the corresponding layers in order to emit different wavelengths from the laser array layer 711, the same wavelength may be emitted using the same composition in each corresponding layer. However, in such a case, the semiconductor laser array element 13 alone emits laser light of the same wavelength from the first laser array layer 701 and the second laser array layer 711. It is necessary to prepare an array element. By doing so, the number of optical components increases as in the first embodiment, but higher output can be achieved because the number of laser beams increases. Although the number of optical components is further increased, the use of three or more semiconductor laser array elements having different wavelengths can cope with applications requiring high output and multiple wavelengths.

According to the second embodiment, in the semiconductor laser array device 13, between the p-type AlGaInP second cladding layer 205 and the n-type AlInP first current blocking layer 206, and between the p-type AlGaInP third cladding layer 207 and n-type GaAlA
Although the s-second current blocking layer 208 has a direct contact structure, a p-type InGaP etching stop layer may be provided between them. By providing the p-type InGaP etching stop layer in this way, it is possible to prevent oxidation of the surface portion on which the current blocking layer is formed. Therefore, a current blocking layer with high crystallinity can be formed.

(Overall Modifications) In each of the above-described embodiments, a multi-wavelength laser light-emitting device using a semiconductor laser array element whose laser light is phase-locked mainly by a connection waveguide has been described. However, the present invention is not limited to this, and can be implemented in the following forms.

In each of the above embodiments, even when a plurality of the semiconductor laser array elements are used, it is possible to perform a phase lock among the plurality of semiconductor laser array elements. FIG. 16 is a perspective view illustrating a configuration of a light source unit of a multi-wavelength laser light emitting device according to the present modification. As shown in the figure, in the present multi-wavelength laser light emitting device, a plurality of semiconductor laser array elements 600 (four in the figure) are arranged horizontally in the same posture with the end face 601 from which laser light is emitted facing the front. And a laser beam 603 in front of the
And an optical component 604 disposed between the light source and the parallel light generator.

Each semiconductor laser array element 600 has a second
In the embodiment, the laser light oscillating units that emit lasers having different wavelengths vertically are arranged,
The phase-locked laser light is emitted. The optical component 604 has a predetermined light transmissivity, and a surface 604A facing the assembly 602 is formed flat and reflects a part of the incident laser beam 603 to be turned back to each end surface 601 of the assembly 602. . Here, since the laser light emitted from the semiconductor laser is generally emitted while spreading, the laser light incident on the facing surface 604A is reflected at various angles according to the incident angle. By providing such an optical component 604, laser light emitted from different semiconductor laser array elements can
It is folded back to 1 and a part of the light is also incident on the inside of the laser light oscillating section of the semiconductor laser array element next to it. A part of the laser light is incident into the resonator from the output end face of each end face 601, and the result is that the resonator is shared between the semiconductor laser array elements in the same manner as the provision of the coupling waveguide. Therefore, the phase lock is also performed between the semiconductor laser array elements.

As a result, the number of phase-locked laser beams further increases, so that a higher-power laser spot can be obtained. On the end face of the semiconductor laser array element according to each of the above embodiments, an end face window structure is formed in a portion where both ends in the extending direction of the laser light oscillating section face, and further, in the portion where the end face window structure is formed, An insulating layer may be formed on each electrode surface. The end face window structure is a structure in which Zn is diffused in a portion where both ends in the extending direction of the laser light oscillation unit face. This Zn has the effect of suppressing absorption of laser light at the end of the laser light oscillating portion, thereby suppressing heat generation. If an SiO ₂ insulating layer is formed in a portion of the Zn diffusion portion located above each electrode, power supply at the end face can be eliminated, and prevention of heat generation at that portion can be further promoted.

In each of the above embodiments, the red (AlGa
The present invention has been described by taking as an example a combination of an InP material) and an infrared (InGaAs material) semiconductor laser.
The present invention can, of course, be applied to a combination of semiconductor lasers of blue (InGaN material) and green (InGaN material). <Application Example> Next, an application example of the multi-wavelength laser light emitting device will be described. It is needless to say that the present invention is not limited to the following uses.

First, the multi-wavelength laser light emitting device can be incorporated into a torch of a welding device and used for welding metal. FIG. 17 shows a conventional welding robot 800.
FIG. The laser welding torch 801 is held on a base 803 via a robot arm 802, and the work is welded according to the contents programmed in a control unit (not shown). Since the machining accuracy is not sufficient, so-called weaving welding is usually performed in which the laser welding torch 801 is periodically waved in the direction of the arrow to perform welding. However, the laser welding torch 801 in the multi-wavelength laser light emitting device according to the conventional configuration is Heavy, this laser welding torch 80
The robot arm 802 and the like had to have considerably high rigidity so that the main body of the welding robot 800 was not shaken by the swinging operation 1, and the whole had to be enlarged. However, the multi-wavelength laser light emitting device according to the present invention,
Since it can be made very lightweight, it can be used with a laser welding torch 8
01, there is almost no vibration caused by the swinging operation, and the welding robot 800 can be reduced in size and weight. Further, even if the optical axes of the condenser lens 40 and the hologram optical component 41 in FIGS. 1 and 2 are slightly displaced, the beam light can fluctuate. With such a configuration, the entire laser welding torch 801 as shown in FIG. This eliminates the need to shake, and hardly causes vibration that adversely affects machining accuracy. According to this, not only high output but also laser light having a color when using laser light in the visible region is excellent in visibility, and is considered to contribute to improvement in workability of welding work. Further, the present invention can also be used for a boring apparatus for punching or cutting a printed circuit board or the like.

As such a laser welding apparatus,
Red laser of AlGaInP material (wavelength 655 nm to 66
5 nm) or an infrared laser of InGaAs material (wavelength 1060 n
m; In _0.2Ga_0.9As) is used, but at a different wavelength
Incorporates a semiconductor laser array device that emits laser light
Cuts the laser light to the optimal wavelength according to the workpiece material.
By changing, quickly and without the need to interrupt work
Optimal welding becomes possible.

In particular, when a hole is formed in a work made of two or more materials having different absorption efficiencies for each wavelength as described in the prior art, a laser beam having a wavelength suitable for each material is switched in a short period of time. By irradiating while piercing, highly accurate drilling can be performed. In addition, by scanning the surface of the metal work with the laser light, the surface can be altered (quenched). Also in this case, if the output and the wavelength are changed according to the type of the metal, the processing can be performed efficiently.

Production of Two-Dimensional Matrix Data This apparatus is effective for producing so-called dot-shaped two-dimensional matrix data. JP-A-11-16760
As disclosed in Japanese Unexamined Patent Application Publication No. 2 (1999) -207, conventionally, marking processing is generally performed using a YAG laser.
Since the G laser has poor response, there is a problem in forming uniform dots at high speed. For example, it is not suitable for forming a matrix pattern in which irradiation is performed in a fine pulse after a non-irradiation time continues. On the other hand, the multi-wavelength laser light emitting device has excellent responsiveness and is therefore effective for forming such a matrix pattern.

Further, since laser beams having different wavelengths can be switched and output, the following effects can be obtained. In other words, when the work to be marked is formed by joining members made of different materials, the joint is switched to laser light having a wavelength suitable for different members at the joint, thereby continuously marking the work. Work efficiency can be greatly improved. Also, in the case of a work in which members having different absorptances for lasers of different wavelengths are laminated, marking or punching processing is performed on the upper layer by switching the wavelength of laser light and its output for each layer to be processed, or Can also be used to mark the intermediate layer as it is, further expanding the applications.

Further, the multi-wavelength laser light emitting device according to the above embodiment can be applied to the field of medical equipment in addition to the industrial equipment as described above. For example, a laser scalpel for incision and hemostasis of a living body, and irradiation of a living body injected with a photophylline drug can be used for medical devices such as treatment of malignant tumors such as cancer and hair growth treatment. It goes without saying that the optimum wavelength is selected. In the multi-wavelength laser light emitting device shown in FIGS. 1 and 2, the output and the wavelength can be easily switched, so that one device can be used for many purposes. Another advantage is that the device can be made smaller, so that it does not take up space in the treatment room.

In particular, a blue laser of InGaN material (wavelength 55
0 nm; In _0.5 Ga _0.5 N) is suitable for treating retinal detachment by irradiating the retina. A green laser (wavelength: 380 nm; In _0.5 Ga _0.95 N) made of an InGaN material is suitable for treating myopia by irradiating the cornea. In addition, the infrared laser of InGaAs material (wavelength: 1060 nm; In _0.2 Ga _0.9 As) can be used for laser incision of a living body and laser scalpel for hemostasis.
It can also be used for the treatment of the above-mentioned retinal detachment by irradiating the retina through an element (an element that reduces the wavelength). In addition, by providing the blue laser and the green laser in one device, the eye can be efficiently treated by appropriately selecting the laser.

[0090]

As described above, according to the multi-wavelength laser light emitting device of the present invention, a plurality of semiconductor laser array elements having different wavelengths of laser light to be output and light emitted from the plurality of semiconductor laser array elements is provided. An optical element for condensing a plurality of laser beams at predetermined positions, at least one semiconductor laser array element is formed by arranging a plurality of optical waveguides partitioned by a current block layer on one substrate. One or more laser array layers, and at least two adjacent optical waveguides of at least one laser array layer are optically coupled to each other. Can be output.
Since the semiconductor laser array element itself is very small and light, laser-applied equipment using it can be made small and light, and laser light of different wavelengths can be emitted by a single device. Available at

Further, according to the semiconductor laser array element of the present invention, one element can output laser beams of different wavelengths, so that the most suitable semiconductor laser to be incorporated in the multi-wavelength laser light emitting device. An array element can be provided.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an overall configuration of a multi-wavelength laser light emitting device 1 according to a first embodiment.

FIG. 2 is a perspective view showing an overall configuration of the multi-wavelength laser light emitting device 2 according to the first embodiment.

FIG. 3 is a partially cutaway perspective view of the semiconductor laser array element 11 in FIG.

FIG. 4 is a view seen through from above to show the internal structure of the semiconductor laser array element 11 in FIG. 3;

FIG. 5 is a process chart showing a method for manufacturing the semiconductor laser array element 11;

6 is a schematic diagram for explaining in detail a method of forming an n-type AlInP current blocking layer 106 in step 2 in FIG.

FIG. 7 is a schematic diagram specifically explaining a resonance effect in the semiconductor laser array element 11;

FIG. 8 is a diagram showing a variation of the coupling waveguide.

FIG. 9 is a diagram showing a variation of the coupling waveguide.

FIG. 10 is a sectional view of a semiconductor laser array element 13 of the multi-wavelength laser light emitting device according to the second embodiment.

FIG. 11 is a partially cutaway perspective view of the semiconductor laser array element 13;

FIG. 12 is a process chart showing a method for manufacturing the semiconductor laser array element 13, and proceeds in numerical order.

FIG. 13 is a process chart showing a method for manufacturing the semiconductor laser array element 13, and proceeds in numerical order.

FIG. 14 is a process chart showing a method for manufacturing the semiconductor laser array element 13, and proceeds in numerical order.

FIG. 15 is a process diagram showing one process of manufacturing a semiconductor laser array element according to a modification of the second embodiment, and proceeds in numerical order.

FIG. 16 is a perspective view showing a light source unit of a multi-wavelength laser light emitting device according to a modification of each of the above embodiments.

FIG. 17 is a perspective view showing the overall configuration of a conventional laser welding apparatus.

[Explanation of symbols]

 1, 2 multi-wavelength laser light emitting device 10 light source unit 11, 12, 13 semiconductor laser array element 20 collimating unit 30 reflecting unit 40 condensing lens 50 condensing lens driving unit 51 control unit 52 LD driving unit 53 hologram driving unit 107C, 206F , 208F coupling waveguides 121, 123, 206E, 208E waveguides 122, 124, 125, 126 resonator 201 GaAs substrate 202 n-type GaAs buffer layer 203 n-type AlGaInP first cladding layer 204 GaInP / AlGaInP quantum well structure 1 active layer 205 p-type AlGaInP second cladding layer 206 n-type AlInP first current blocking layer 207 p-type AlGaInP third cladding layer 208 n-type GaAlAs second current blocking layer 209 p-type GaAlAs fourth cladding layer 210 GaAs / GaAlAs quantum Well-structured second active layer 211 N-type GaAlAs fifth cladding layer 700, 710 Laser light oscillating unit 7 1 the first laser array layer 711 second laser array layers SP1, SP2 focus-position

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) // B23K 26/00 A61B 17/36 350 (72) Inventor Masaru Satsumura No. 1 in Sachimachi, Takatsuki-shi, Osaka No. 1 Matsushita Electronics Co., Ltd. F term (reference) 4C026 AA02 AA03 AA04 BB08 FF02 FF03 4E068 AE00 AF00 AH00 CK01 5F072 AB13 JJ04 RR03 YY06 5F073 AA12 AA61 AA62 AA74 AA83 AA86 DA04 BA01 DA04

Claims (28)

[Claims] 1. A semiconductor laser array device comprising: a plurality of semiconductor laser array elements having different wavelengths of laser light to be output; and an optical element for condensing a plurality of laser lights emitted from the plurality of semiconductor laser array elements at a predetermined position. At least one semiconductor laser array element includes one or more laser array layers formed by arranging a plurality of optical waveguides partitioned by a current block layer on one substrate, and includes at least one laser array layer. Wherein at least two adjacent optical waveguides are optically coupled to each other. 2. An semiconductor device comprising: one or more semiconductor laser array elements having different wavelengths of laser light to be outputted; and an optical element for condensing a plurality of laser lights emitted from the one or more semiconductor laser array elements at a predetermined position. At least one semiconductor laser array element includes a plurality of laser array layers formed by arranging a plurality of optical waveguides partitioned by a current block layer on a single substrate, and includes a plurality of laser array layers. A multi-wavelength laser light emitting device, wherein the wavelengths of emitted laser lights are different and at least two adjacent optical waveguides of at least one laser array layer are optically coupled to each other. 3. An adjusting means for driving the optical element to adjust the condensing position of the laser light, a laser driving means for selecting and exciting a laser array layer which emits a laser light of a designated wavelength, 3. The multi-wavelength laser light emitting device according to claim 1, further comprising a control unit that controls the adjusting unit according to a wavelength of the laser light to be emitted. 4. The optical coupling between the optical waveguides is performed via a coupling waveguide formed by removing a part of a current blocking layer between the optical waveguides in a groove shape. 4. The multi-wavelength laser light emitting device according to any one of 1 to 3. 5. The multi-wavelength laser light emitting device according to claim 4, wherein the extension direction of the coupling waveguide crosses the extension direction of the optical waveguide. 6. The optical waveguide according to claim 1, wherein at least two adjacent optical waveguides are formed to be curved, and the optical waveguides are optically coupled by merging in a part of the optical waveguide in an extending direction thereof. The multi-wavelength laser light emitting device according to any one of the above. 7. A plurality of optical waveguides extending from opposing end surfaces of the substrate to a central portion by being partitioned by a current blocking layer on one substrate are formed in parallel, and a first of the plurality of optical waveguides is formed. The one extending from the end face of the substrate and the one extending from the end face of the second substrate are alternately positioned in the direction perpendicular to the extending direction of the optical waveguide on the substrate surface, whereby optical coupling between the optical waveguides is performed. The multi-wavelength laser light emitting device according to claim 1, wherein: 8. A laser welding apparatus for performing welding using laser light emitted by the multi-wavelength laser light emitting apparatus according to claim 1. 9. A two-dimensional matrix data is produced on a surface to be irradiated by irradiating a laser beam emitted by the multi-wavelength laser light emitting device according to any one of claims 1 to 7. Matrix data preparation device. 10. A semiconductor laser knife device which cuts or stops a living body by irradiating a laser beam emitted by the multi-wavelength laser light emitting device according to any one of claims 1 to 7. 11. A retinal detachment treatment apparatus, wherein a treatment for retinal detachment is performed by irradiating the retina with laser light emitted by the multi-wavelength laser light emitting device according to any one of claims 1 to 7. 12. A myopia treatment apparatus for irradiating the cornea with laser light emitted by the multi-wavelength laser light emitting apparatus according to any one of claims 1 to 7 to treat myopia. 13. A drilling device for irradiating a laser beam emitted by the multi-wavelength laser light emitting device according to any one of claims 1 to 7 onto an object to perform drilling or cutting. . 14. A surface alteration processing apparatus which performs surface alteration processing by irradiating a laser beam emitted by the multi-wavelength laser light emitting device according to any one of claims 1 to 7 onto an object to be irradiated. . 15. A first laser beam oscillating section divided by a first current block layer and formed in a plurality of rows.
And a second laser array layer formed by arranging a plurality of rows of second laser light oscillating portions partitioned by a second current block layer, and the first laser array layer is arranged opposite to the first laser array layer.
A semiconductor laser array device, wherein the wavelength of the laser light emitted from the second laser array layer is different from the wavelength of the laser light emitted from the second laser array layer. 16. At least two adjacent ones of the first laser light oscillating portions in the first laser array layer and at least two adjacent ones of the second laser light oscillating portions in the second laser array layer 16. The semiconductor laser array device according to claim 15, wherein the two are optically coupled to each other. 17. The optical coupling between the first laser light oscillating units and the optical coupling between the second laser light oscillating units are the first
17. The semiconductor laser array device according to claim 16, wherein the coupling is performed by a coupling waveguide formed by removing a part of the current block layer and the second current block layer in an elongated groove shape. 18. The optical coupling between the first laser light oscillating units and the optical coupling between the second laser light oscillating units are performed by a configuration that is curved so as to merge in a part of the extending direction. 17. The semiconductor laser array device according to claim 16, wherein: 19. The optical coupling between the first laser light oscillating portions and the optical coupling between the second laser light oscillating portions extend from first end faces that are alternately located in a direction perpendicular to a stretching direction. 17. The semiconductor laser array device according to claim 16, wherein the operation is performed between the second end face and the one extending from the second end face. 20. The optical coupling between the first laser light oscillating units and the optical coupling between the second laser light oscillating units are the first and the second.
17. The semiconductor laser array device according to claim 16, wherein the laser beam exuding regions in the current block layer and the second current block layer are in contact with each other or overlap each other. 21. An electrode having a first polarity is formed so as to sandwich the first laser array layer and the second laser array layer, and an electrode having a first polarity is formed between the first laser array layer and the second laser array layer. 21. The semiconductor laser array device according to claim 15, wherein an electrode having a second polarity different from the first polarity is formed at an end of the surface of the conductive layer formed at the boundary. 22. An end of the first laser array layer and a second end of the second laser array layer.
21. The semiconductor laser array element according to claim 15, wherein an end window structure is provided at an end of the device facing an end of the laser array layer. 23. An insulating portion is provided at a portion where power is supplied on the surface of the end window structure.
3. The semiconductor laser array device according to item 1. 24. The forbidden band width of the first current blocking layer and the second current blocking layer is equal to a first band gap between the first current blocking layer and the second current blocking layer. The refractive index of the first current blocking layer and the second current blocking layer is larger than that of the active layer at the portion of the laser beam oscillating section and the second laser beam oscillating section, and The second laser light oscillating unit is smaller than the first laser light oscillating unit and the second laser light oscillating unit located between the second current blocking layers.
3. The semiconductor laser array device according to any one of 3. 25. A plurality of semiconductor laser array elements according to claim 15, and laser light emitted from one semiconductor laser array element is incident on a laser light oscillation section of another semiconductor laser array element. A semiconductor laser array element assembly comprising: 26. The method for manufacturing a semiconductor laser array element according to claim 16, wherein: a first step of forming a first laser array layer in which a plurality of laser light oscillating units are arranged in line; A second step of forming a second laser array layer in which a plurality of laser light oscillating units are arranged in line, facing the first laser array layer; MOC on the laser array layer
After forming the optical waveguide layer using the VD method or the MBE method, the second laser array layer is formed by changing a component so as to generate a laser beam having a different wavelength from the laser beam generated from the first laser array layer. A method for manufacturing a semiconductor laser array element, wherein the semiconductor laser array element is formed by a method similar to that of the first laser array layer. 27. The method of manufacturing a semiconductor laser array element according to claim 16, wherein: a first step of forming a first laser array layer in which a plurality of laser light oscillating units are arranged in line; A second step of forming a second laser array layer in which the laser light oscillation sections are arranged in a row, and a third step of bonding the first laser array layer and the second laser array layer together The third step includes forming an optical waveguide layer on at least one of the bonding surfaces of the first laser array layer and the second laser array layer, and then performing the first step via the optical waveguide layer. A method for manufacturing a semiconductor laser array element, comprising: laminating the laser array layer of (1) with the second laser array layer. 28. Further, before the third step, at least one bonding surface of the optical waveguide layer, the first laser array layer, or the second laser array layer is formed.
28. The method according to claim 27, further comprising a fourth step of performing a hydrophilic treatment, and wherein the third step performs a heat treatment in the presence of hydrogen.