JP2001284729A - Semiconductor laser array device and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser array device that can carry out phase locking between array structures in a semiconductor laser array device where the plurality of array structures are combined. SOLUTION: First and second laser array layers 301 and 311 are positioned so that laser beam oscillation parts 300 and 310 are arranged in parallel at the same position in a vertical direction. In addition, the thickness of a p-type AlGaInP third cladding layer 107 is specified so that one portion of distribution regions 300A and 310A of the laser beam of the laser beam oscillation parts 300 and 310 overlaps each other.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to optical recording, optical communication,
The present invention relates to a high-output semiconductor laser array device used for welding or the like.

[0002]

2. Description of the Related Art In recent years, there has been a demand for high-output semiconductor lasers used for optical recording, optical communication, welding, and the like. In order to meet such a demand, there is known an array structure using a plurality of laser light oscillating portions formed on one substrate.

[0003] This is achieved by providing a plurality of laser light oscillating portions (a portion including a portion that emits a laser beam and a portion that guides a laser beam is referred to as such in this specification) on one substrate. This is a technique for emitting high power by emitting a laser beam and condensing the laser beam at one location. However, in practice, the laser beams emitted from the respective laser light oscillators are different in wavelength and phase from each other. Lights interfere with each other. For this reason, a high output cannot be obtained according to the number of laser light oscillation units provided.

On the other hand, as disclosed in Japanese Patent Application Laid-Open No. Hei 5-226765, each laser light oscillating portion is positioned close to one substrate, and a portion of the current block layer where laser light oozes out. In the above, the wavelengths and phases of the laser beams emitted from the respective laser beam oscillators are matched by causing the laser beams to interfere with each other. According to this, the laser light emitted from each laser light oscillating unit is focused on one spot, and high output can be obtained.

[0005]

By using a combination of a plurality of arrays rather than using a single array structure, a higher output can be expected. Although the wavelength and the phase of the laser light can be matched, it is not realized until the wavelength and the phase of the laser light between the array structures are matched.

Accordingly, the present invention provides a semiconductor laser array device comprising a plurality of the above array structures in which the wavelength and the phase between the respective array structures can be matched (hereinafter referred to as "phase lock"). It is an object to provide a simple semiconductor laser array device.

[0007]

In order to achieve the above object, a first laser array in which a plurality of first laser light oscillating sections partitioned by a first current block layer are formed is provided. Layer, a second laser beam oscillating portion partitioned by a second current block layer, a second laser array layer formed by arranging a plurality of rows, at least a part of the laser beam distribution region of each other Are stacked so that they touch or overlap each other.

[0008] This makes it possible to perform phase lock between the first laser array layer and the second laser array layer. As a result, a single high-power laser spot can be obtained when the laser light emitted from each laser array layer is collected. Here, the first laser beam oscillating portion and the second laser beam oscillating portion are adjusted in thickness of a semiconductor layer in a portion opposed thereto, so that the first laser array layer and the second laser beam At least a part of each laser light distribution region with the array layer may be in contact with or overlap with each other.

Here, an optical waveguide layer for introducing laser light oscillated by each laser light oscillating unit is formed between the first laser light oscillating unit and the second laser light oscillating unit. In this optical waveguide layer, at least a part of the laser beam distribution region of the first laser array layer and the second laser array layer may be in contact with or overlap with each other.

Here, at least one of the first laser beam oscillating portions in the first laser array layer,
And at least two of the second laser beam oscillating units in the second laser array layer are optically coupled to each other. Here, the optical coupling between the first laser light oscillating portions and the optical coupling between the second laser light oscillating portions are such that a part of the first current block layer and a part of the second current block layer are elongated grooves. The coupling may be performed by a coupling waveguide formed by being removed.

The optical coupling between the first laser light oscillating units and the optical coupling between the second laser light oscillating units are as follows.
It may be performed by a configuration formed to be curved so as to merge in a part of the stretching direction. Here, the optical coupling between the first laser light oscillating portions and the optical coupling between the second laser light oscillating portions are those that extend from first end faces that are alternately located in a direction perpendicular to the extending direction, It can be performed between the second end face and the one extending from the second end face.

The optical coupling between the first laser light oscillating units and the optical coupling between the second laser light oscillating units are as follows.
The laser beam exudation regions in the first current block layer and the second current block layer may be in contact with each other or overlap each other. Here, an electrode having a first polarity is formed so as to sandwich the first laser array layer and the second laser array layer, and is formed at a boundary between the first laser array layer and the second laser array layer. An electrode having a second polarity different from the first polarity may be formed at an end of the surface of the formed conductive layer.

Here, an end face window structure may be provided at an end of the device where the end of the first laser array layer and the end of the second laser array layer face. This allows
Heat generation can be suppressed by suppressing absorption of laser light at the end of each laser light oscillation unit. Here, an insulating portion may be provided at a portion where power is supplied on the surface of the end face window structure.

Thus, the prevention of heat generation can be further promoted. Here, the forbidden band width of the first current block layer and the second current block layer is the first laser beam located between the first current block layers and between the second current block layers. The first current blocking layer and the second current blocking layer have a refractive index larger than that of the active layer at the portion of the oscillating portion and the second laser beam oscillating portion. Of the first laser light oscillating portion and the second laser light oscillating portion located between the current block layers.

[0015] This makes it possible to expand the distribution region of the laser light by reducing the absorption of the laser light in the current blocking layer, so that the optical coupling between the adjacent laser light oscillating portions becomes easy.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments for carrying out the present invention will be specifically described below with reference to the drawings. <First Embodiment> FIG. 1 is a perspective view showing a configuration of a semiconductor laser array device LA1 according to the present embodiment.
FIG. 2 is a vertical sectional view including line AA ′ in FIG. 1.

<Overall Configuration> The present semiconductor laser array device LA
Reference numeral 1 denotes a semiconductor laser array element 100 that oscillates a laser beam having a wavelength corresponding to red in a real refractive index guided type in which a plurality of single heterostructures are formed on one substrate, and a plurality of laser beams in one spot. And an optical system 200 for collecting light.

The semiconductor laser array element 100 is formed by laminating a so-called single heterostructure having two long laser light oscillating portions 300 and 310 in the vertical direction of the substrate on one substrate. In a direction parallel to the substrate surface, each of the laser light oscillating units 300 and 310 has a structure arranged in a row on the same plane. Here, a portion in which a plurality of laser light oscillating units 300 are arranged in a direction parallel to the substrate surface is referred to as a first laser array layer 301, and a plurality of laser light beams are arranged in a direction parallel to the substrate surface located thereon. The portion where the oscillating portions 310 are arranged in line is
Called 1.

Specifically, the semiconductor laser array element 10
0 denotes an n-type GaAs substrate 101 and an n-type GaAs buffer layer 10
2, n-type AlGaInP first cladding layer 103, and GaInP / Al
GaInP quantum well structure first active layer 104, p-type AlGaInP second cladding layer 105, n-type AlInP first current blocking layer 106, p-type AlGaInP third cladding layer 107, n-type A
an lInP second current blocking layer 108, a p-type AlGaInP fourth clad layer 109, a GaInP / AlGaInP quantum well structure second active layer 110, an n-type AlGaInP fifth clad layer 111,
A structure in which an n-type GaAs contact layer 112 is sequentially laminated has n-type electrodes 113A and 113B and a p-type electrode 114A,
114B. The structure excluding the electrodes is hereinafter referred to as an array structure precursor in the present embodiment for convenience.

The n-type electrodes 113A and 113B are planar electrodes formed on the upper and lower surfaces of the array structure precursor.
The mold substrate 113A is an electrode having a three-layer structure of AuGe / Ni / Au formed on the front surface side, and the n-type substrate 113B is an electrode having a three-layer structure of AuGe / Ni / Au formed on the back surface side. . The pair of p-type electrodes 114A and 114B are band-shaped electrodes provided at two positions on the left and right of the array structure precursor, and the left and right ends of the array structure precursor are from the upper portion to the vicinity of the center of the p-type AlGaInP fourth cladding layer 109. It is formed on the surface 115A of the two step portions 115 formed by cutting out.

With the above structure, the laser light oscillation section 300
Is formed from the n-type AlGaInP first cladding layer 103 to the p-type AlGaInP
The laser light oscillating section 310 is composed of the p-type AlGaInP third cladding layer 107 to the n-type AlGaInP fifth cladding layer 111. The optical system 200 includes a collimating lens 201 that generates parallel light, and a condenser lens 202.
The two laser light oscillating units 300 positioned above and below the semiconductor laser array element 100 by the collimating lens 201
, And a plurality of laser beams 203 emitted from 310.
Are parallel light. A plurality of parallel rays 204 passing through the collimating lens 201 by the condenser lens 202.
Is focused on one spot SP. Note that it is desirable to use a lens designed to correct the optical path difference between the laser beams 204 so that the phase does not shift when the light is collected.

<Detailed Structure> The details of the first laser array layer 301 and the second laser array layer 311 will be described below. As shown in FIGS. 1 and 2, first, the n-type AlInP in the lower first laser array layer 301 is formed.
The first current block layer 106 includes both side portions 106A and a plurality of stripes 106B having a discontinuous portion 106C at a central portion in the other extending direction and arranged in parallel with each other. Then, the p-type AlGaInP third cladding layer 107 is
Stripe-shaped grooves 106D formed between the side portions 106A and the stripes 106B and between the stripes 106B.
Further, it is formed so as to be embedded in the discontinuous portion 106C and to cover the entire current blocking layer 106.

The n-type Al in the second laser array layer 311 located above the first laser array layer 301
Similarly to the n-type AlInP first current block layer 106, the InP second current block layer 108 has both side portions 108A and a discontinuous portion 108C at the center in the other extending direction and is arranged in parallel with each other. It is composed of a plurality of stripes 108B. Then, the p-type AlGaInP fourth cladding layer 109 is
Stripe-shaped grooves 108D formed between the side portions 108A and the stripes 108B and between the stripes 108B.
Further, it is formed so as to be embedded in the discontinuous portion 108C and to cover the entire current blocking layer 108.

As a result, the laser light oscillating units 300 and 310 including the elements in which the laser light is distributed in the portion including the active layer, the n-type cladding layer, and the like in each laser array layer are formed. At the time of laser light oscillation, the groove 106
D, 108D and the cladding layer portions embedded in the discontinuous portions 106C, 108C are supplied with power from the element portions corresponding in the vertical direction. The grooves 106D and 108D and the discontinuous portions 106C and 108C in which the respective cladding layers are embedded become a part of the waveguide of the laser light. Hereinafter, this portion in the first laser array layer 301 will be referred to as a main waveguide 106E corresponding to the groove 106D, and a portion corresponding to the discontinuous portion 106C will be referred to as a coupling waveguide 106F.
In the waveguide main path 108E.
And the portion corresponding to the discontinuous portion 108C to the connecting waveguide 10
Call it 8F.

Next, the positional relationship between the first laser array layer 301 and the second laser array layer 311 will be described.
First laser array layer 301 and second laser array layer 31
The position 1 is determined so that the laser light oscillators 300 and 310 are arranged at the same position in the vertical direction and in parallel. Furthermore, the laser light distribution sections 300A and 310A of the laser light oscillating sections 300 and 310 are partly in contact with each other or overlap each other (in the drawings, they are overlapped with each other. This embodiment and the present embodiment) In the following embodiments, the laser light distribution region indicates a region including a region where the laser light oozes from each laser light oscillating portion to the current block layer.), And the p-type AlGaInP
The thickness of the third cladding layer 107 is defined. More specifically, the energy in each laser light oscillating section takes the largest energy in the active layer, and generally has an energy distribution form in which the energy gradually decreases as the distance from the active layer increases. 10% with respect to the central energy in the laser beam distribution regions 300A and 310A
Can be positioned so that the area portions having the energy values before and after are overlapped with each other.

As described above, each laser light oscillating unit 30
0 and 310 laser light distribution areas 300A and 310A
Are located close to each other such that they touch or overlap with each other, so that the laser beams emitted from the respective laser light oscillation units are condensed by the common optical system as described above. It becomes easier. Further, the forbidden band width of the first current block layer and the second current block layer is determined by the activation of each laser beam oscillation unit located between the first current block layers and the second current block layers. Each of the laser light oscillations, wherein the refractive index of the first current blocking layer and the second current blocking layer is larger than that of the first current blocking layer and between the first current blocking layer and the second current blocking layer. Each part is formed of a material smaller than that of the part.

Thus, the light confinement effect is exhibited by the actual refractive index difference, and the loss of the laser light due to the absorption of the laser light in the current blocking layer can be reduced.
Next, although not shown, the end face from which the laser light is emitted is the end face 116 on the near side in FIG. 1 and the end face 11 on the opposite side.
7 so that the surface of the end face 116 does not
A low reflectance film of about 15% is formed. As the material of the low reflectance film, Al ₂ O ₃ , SiO ₂ , Si ₃ N ₄ ,
TiO ₂ or the like can be used, but is not limited thereto. The surface of the end face 117 has a reflectance of 70%.
A high reflectance film of about 98% is formed. This high-reflectance film is composed of a low-refractive-index dielectric film made of a material selected from Al ₂ O ₃ , SiO ₂ , Si ₃ N _{4 and the} like, and a high-refractive index selected from TiO ₂ , amorphous Si, hydrogenated amorphous Si and the like. It can be formed by alternately depositing two or more layers with a dielectric film, but is not limited thereto.

<Method of Manufacturing Semiconductor Laser Array Element 100> FIGS. 3 to 5 are process diagrams showing this method of manufacturing. First, as shown in FIG.
Prepare 1 Next, as shown in FIG.
Layers up to the p-type GaAlInP second cladding layer 105 are sequentially formed on the surface of the p-type GaAs substrate 101 by MOCVD or MBE. Although not particularly specified below, the formation of each layer in each of the following steps is also performed in the same manner as in the MOC.
It is formed by using the VD method or the MBE method.

Next, as shown in FIG.
A material layer 106G before the patterning of the P current first block layer 106 is formed. Next, as shown in FIG.
A mask layer MA1 having an opening having a pattern opposite to the pattern for forming the n-type InAlP current first block layer 106 is formed. Next, as shown in FIG.
1 by liquid phase etching from above
A pattern of the n-type InAlP current first block layer 106 is formed on 06G. After that, the mask MA1 is removed.

Next, as shown in FIG.
An InP third cladding layer 107 is formed. Next, FIG.
As shown in (7), the n-type InAlP second current blocking layer 1
08 material layer 108G is formed. Next, as shown in FIG. 4 (8), a mask layer MA2 having an opening having a pattern opposite to the pattern for forming the n-type InAlP current second block layer 108 is formed.

Next, as shown in FIG. 4 (9), a pattern of the n-type InAlP current second block layer 108 is formed on the material layer 108G by performing liquid phase etching on the mask layer MA2. After that, the mask MA2 is removed.
Next, as shown in FIG. 5 (10), layers from the p-type AlGaInP fourth cladding layer 109 to the n-type GaAs contact layer 112 are sequentially laminated and formed.

Next, as shown in FIG.
A mask MA3 is formed on the surface of the As contact layer 112 except for left and right ends. Next, as shown in FIG. 5 (12), liquid phase etching is performed from above the mask MA3, thereby forming the right and left ends of the n-type GaAs contact layer 112 and the middle of the p-type AlGaInP third cladding layer 107 located thereunder. The steps are removed to form the step portion 115A. After that, the mask MA3 is removed.

Through the above steps, the array structure precursor is formed. Next, as shown in FIG. 5 (13), the semiconductor laser array element is completed by forming n-type electrodes 113A and 113B and p-type electrodes 114A and 114B at predetermined portions. <Semiconductor laser array device LA
According to the semiconductor laser array device LA1 having the above-described configuration, the laser light does not interfere with each other at the focused laser spot so as to cancel each other due to a phase shift. A high-power laser spot can be obtained corresponding to the number of oscillation parts.

This effect is based on the following operation. First, in each of the first laser array layer 301 and the second laser array layer 311, the laser light can be phase-locked. FIG. 6 is a schematic diagram specifically explaining the above operation (resonance operation). As described above, the adjacent waveguides 106E and the waveguides 108E are connected to each other by the coupling waveguides 106F and the waveguides 108F. Therefore, it is considered that they share a so-called resonator. Can be

That is, the resonator 402 formed in one waveguide main path 401 in the extending direction of the waveguide main path and the resonator 402 formed in the other waveguide main path 403 adjacent thereto extend the resonator. Since the resonator 404 formed in the direction is connected by the connection waveguide 405, a part of the resonator 404 is shared as a whole in addition to the resonator 402 and the resonator 404,
It is considered that the resonator 406 including the coupling waveguide 405 is formed.

For this reason, separate waveguide main paths 401 and 40
The laser beams oscillated from 2 are phase locked. As described above, in the first laser array layer 301 and the second laser array layer 311, the phase locking is performed between adjacent waveguides, so that the laser array layer 3
In each of the layers 01 and 311, the phase lock is similarly performed in a plurality of waveguides.

The laser light oscillating units 300 and 3 of the first laser array layer 301 and the second laser array layer 311
10, since the laser light distribution regions 300A and 310A are located so as to be in contact with or overlap with each other, the upper and lower laser light oscillation units 300 and 310 also
It is considered that the laser beams resonate (share the resonator).

Therefore, the laser beams oscillated by all the laser beam oscillators are phase-locked. <First Laser Array Layer 301 and Second Laser Array Layer 3
Regarding the positional relationship of 11> In order for the first laser array layer 301 and the second laser array layer 311 to share a resonator, the phase lock is used if the laser light distribution regions are at least partially in contact or overlap. Is done.

Therefore, the laser beam oscillating units 300 and 310 in each laser array layer need not always be provided at the same position in the vertical direction and arranged in parallel.
For example, the laser light oscillating units 300 and 310 may be vertically displaced. Further, the laser light oscillation unit 300 located at the right end of the first laser array layer 301
And only a part of the laser light distribution region with the laser light oscillating unit 310 located at the left end of the second laser array layer 311 may be in contact with or overlap with each other. This is because, in the same laser array layer (301 and 311), phase locking is performed by the above-described coupling waveguide.

Each of the laser light oscillation units 300 and 3 of the first laser array layer 301 and the second laser array layer 311
It is also possible to position the 10's so that they are not parallel but cross each other. <Embodiment 2> In the semiconductor laser array device of this embodiment, the semiconductor laser
The first laser array layer 30 which is not integrally formed by using the OCVD method or the MBE method but is formed in advance.
The difference is that two structures including the first and second laser array layers 311 are formed by bonding together. Less than,
The difference will be described.

FIG. 7 is a process chart showing a manufacturing method according to the present embodiment. Next, the steps shown in FIGS. 3A to 4C are performed to produce array structure precursors 500 and 510 as shown in FIG. Next, FIG.
As shown in the figure, the p-type AlGaInP third cladding layers 107 of the array structure precursors 500 and 510 are opposed to each other, and the laser light oscillating portions are aligned and overlapped. Adhere with.

Prior to the superposition, p of each of the two array structure precursors 500 and 510 to be bonded is set.
After cleaning the surface of the third AlGaInP third cladding layer 107 and removing the natural oxide film, a hydrophilic treatment, that is, the surface is terminated with OH groups. When the hydrophilically processed wafers are superimposed,
Both are desirable because they are integrated by hydrogen bonding even at room temperature, and the strength at the bonded portion is improved.

When the hydrophilic treatment is performed as described above, if the heat treatment is performed in the presence of hydrogen, both array structure precursors 500 and 510 can be more firmly integrated. Next, the steps shown in FIGS. 5 (11) to 5 (13) are performed to complete the semiconductor laser array element as shown in FIG. 7 (3). <Embodiment 3> The semiconductor laser array device according to the present embodiment includes the n-type AlInP first current block layer and the n-type A
Other configurations are the same except that the shape of the lInP second current block layer is different from that of the above-described semiconductor laser array device LA1. Hereinafter, the differences will be described.

FIG. 8 shows the n-type AlInP first current blocking layer 6 in the semiconductor laser array device according to the present embodiment.
FIG. 10 is a diagram when the shapes of the second current block layer 610 and the n-type AlInP second current blocking layer 610 are viewed from above. As shown in this figure,
By forming an absent region of the n-type AlInP first current block layer 600 and the n-type AlInP second current block layer 610 in an X-shape, the waveguide is formed to be bent in a plan view and merged with the adjacent one. It has a configuration.

More specifically, each of the n-type AlInP first current block layer 600 and the n-type AlInP second current block layer 610 is composed of a plurality of regions, and the p-type AlGaInP first current block layer is located between the current block layers. Three cladding layers 620,
A p-type AlGaInP fourth cladding layer 630 is embedded. The waveguides 640 and 650 formed by the buried portion of the cladding layer are formed to have an X-shape when viewed from the upper surface, where the waveguides 640 and 650 are joined together at a central portion in the extending direction. As described above, the waveguides 640 and 650 formed between the n-type AlInP first current blocking layer 600 and between the n-type AlInP second current blocking layers 610 are replaced with the X junction waveguide 640 and the X junction waveguide 650.
Call.

Such an X junction waveguide 64
0,650, adjacent waveguides 641 to merge with each other
A, 651A (located on the left side of the drawing) and 641B, 651B
(Position on the right side in the drawing), an effect that laser beams resonate can be obtained. When a plurality of X-junction waveguides 640 and 650 are arranged in parallel, adjacent waveguides that do not merge are provided at positions that are adjacent to each other so that the respective waveguide regions partially touch or overlap in the horizontal direction. Accordingly, a so-called resonator is shared between adjacent waveguides that do not merge. Thus, all the waveguides are resonated.

As a result, the laser light in each waveguide path can be phase-locked, and the laser light does not interfere with each other in the focused laser spot so as to cancel each other due to a phase shift. High-power laser light spots can be obtained in accordance with the number of oscillation portions. <Embodiment 4> The semiconductor laser array device according to the present embodiment comprises an n-type AlInP first current block layer and an n-type AlInP
Other configurations are the same except that the shape of the second current block layer is different from that of the above-described semiconductor laser array device LA1. Hereinafter, the differences will be described.

FIG. 9 shows an n-type AlInP first current blocking layer 7 in the semiconductor laser array device according to the present embodiment.
FIG. 10 is a diagram when the shapes of the second current blocking layer and the n-type AlInP second current blocking layer 710 are viewed from above. n-type AlInP first current blocking layer 700 and n-type AlInP second current blocking layer 71
0 is not divided into a plurality of regions as described above, but is a continuous planar shape.
A plurality of short and long grooves 701 and 711 are formed parallel to each other. Then, the grooves 70 formed in a predetermined pattern
A p-type AlGaInP third cladding layer and a p-type AlGaInP fourth cladding layer are embedded in the one portion and the groove 711.

More specifically, the pattern in which the p-type AlGaInP third cladding layer and the p-type AlGaInP fourth cladding layer are buried (that is, the formation patterns of the grooves 701 and 711) are parallel to each other from both ends to near the center. Stripes 702, 703, 712, and 713.
The stripes 702 and 703 and the stripes 712 and 713 are formed to have different arrangement phases. Also, the stripe 702 and the stripe 70
3 and stripes 712 and 71
The distance between the first and second waveguides 3 is set so that a part of the waveguide region (a portion of the laser beam extruding into the current blocking layer) is in contact with or overlaps with the third waveguide region.

Thus, the p-type extending from one end portion
The stripes 702 of the portion of the AlGaInP third cladding layer embedded in the current block layer are between the stripes 703 of the portion of the p-type AlGaInP third cladding layer embedded in the block layer extending from the other opposite end. Are located at such a distance that a part of the waveguide regions touch or overlap each other.

Also, p-type AlGaIn extended from one end
The stripes 712 of the portion embedded in the current blocking layer of the P fourth cladding layer are between the stripes 713 of the portion embedded in the block layer of the p-type AlGaInP fourth cladding layer extending from the other opposite end. Are located at such a distance that a part of the waveguide regions touch or overlap each other.

With such a configuration, the waveguides 702 and 703 extending from different end faces are formed in the same manner as described above.
During the operation, the laser light resonates between the waveguides 702 and 703, so that the laser light oscillated by each laser light oscillator can be phase-locked. Do not interfere so as to cancel each other due to a phase shift, so that a high-power laser spot can be obtained corresponding to the number of laser light oscillation portions provided.

<Fifth Embodiment> The semiconductor laser array device according to the fifth embodiment has a configuration of the n-type AlInP first current block layer and the n-type AlInP second current block layer, and the laser light oscillating section 300 and the laser light oscillation. The configuration is the same as that of the above-described semiconductor laser array device LA1 except that the arrangement distance in each of the sections 310 is different. Hereinafter, the differences will be described.

FIG. 10 is a sectional view of a semiconductor laser array element according to the present embodiment, and is a view corresponding to FIG. In the first laser array layer 301 and the second laser array layer 311, in the first embodiment, the middle part of the current block layer is discontinuous. However, here, the current block layer is not formed and is continuously stretched in a stripe shape. It has a general shape.

By setting the stripe width to be narrower than that in the first embodiment, except for the current block layers located at both ends in the horizontal direction, each of the laser light oscillating units 300 and 310 has its own width. The arrangement interval is set to be closer. The arrangement distance is such that the laser light oscillating units 300 and the laser light distribution area 300 A of the laser light oscillating unit 310 are different from each other.
The width of the current block layer is defined such that the portions and the distribution region 310A (the portion of the laser beam seeping out to the current block layer) contact each other or overlap each other.

More specifically, as described above, the laser light distribution areas 300A and 310A of each of the laser light oscillating sections 300 and 310 have a value of about 10% with respect to the central energy between the distribution energies 310A and 310A. Can be positioned so that the portions of the regions that will have the same energy overlap each other. As described above, by partly contacting or overlapping a part of the region where the laser light is distributed between the horizontally adjacent laser light oscillating units, it is possible to perform phase locking of the laser light within the same laser array layer.

In each of the laser array layers, the interval between the laser light oscillating portions can be a constant interval, or can be a variable interval as described below. First, in the same laser array layer, the laser light oscillating portion located at the center portion is harder to supply power than the laser beam oscillating portions located at both ends, so that the light emission amount tends to be smaller. From the viewpoint of coping with such a problem, it is desirable to reduce the interval between the laser light oscillating units toward the center in order to increase the light emission amount at the center.

Next, in the same laser array layer, heat is more likely to stay at the central portion than at both ends, so that the degree of heat generation is high. From the standpoint of dealing with such a problem, it is desirable to increase the distance between the laser light oscillating units toward the center. By doing so, it is possible to prevent heat from being confined in a narrow area and to suppress the amount of heat generated in the central part.

<Sixth Embodiment> A semiconductor laser array device according to a sixth embodiment of the present invention provides an optical waveguide layer between a first laser array layer and a second laser array layer, which collects both laser beams at an intermediate portion therebetween. Is different from the semiconductor laser array device LA1 in that the semiconductor laser array device LA1 is interposed. Hereinafter, the differences will be described.

FIG. 11 is a cross-sectional view including the configuration of the semiconductor laser array element according to the present embodiment, and corresponds to FIG. As shown in this figure, the p-type AlGaInP
The p-type AlGa
An InP optical waveguide layer 800 is interposed. This allows the p-type between the first and second laser array layers
The InGaP optical waveguide layer is interposed.

The p-type AlGaInP optical waveguide layer 800 has a bandgap equal to or larger than that of the active layer and a p-type AlGaInP
The composition and the amount of impurities are defined so as to be lower than those of the third cladding layer 107. Due to the presence of the p-type AlGaInP optical waveguide layer 800, the laser light oscillated by both the laser light oscillating units located above and below is converted to the p-type InGaP optical waveguide layer 80.
Since the laser light can be collected in the zero portion, the distribution regions of the laser light of the laser light oscillating units located above and below overlap each other in the optical waveguide layer as shown in FIG. Note that both light distribution regions may just contact each other).

For this reason, the phase locking of the laser light is performed between the laser light oscillating units located vertically opposite to each other. Although the manufacturing method is not described in detail, the p-type AlGaInP optical waveguide layer 800 may be interposed in the step of forming the p-type AlGaInP third cladding layer 107 shown in FIG.

Here, the optical coupling method between the first laser array layer and the second laser array layer in the first embodiment,
The difference from the optical coupling method between the first laser array layer and the second laser array layer in the present embodiment will be described. In the first embodiment, the distance between the first laser array layer and the second laser array layer (the thickness of the cladding layer between the layers) is set so that the laser light distribution regions of the respective laser light oscillating portions are in contact with or overlap with each other. Is adopted. On the other hand, in the present embodiment, not the distance between the first laser array layer and the second laser array layer, but the light that is collected and optically coupled to the optical waveguide layer formed between the laser light oscillation units. Adopt a join method.

Due to such a difference, according to the method of the present embodiment, in order to collect the laser light in the optical waveguide layer, the optical waveguide layer is divided into the laser light distributions of the upper and lower laser light oscillators. Although it is necessary to position the region so as to be in contact with or overlap with the region, there is an advantage that the restriction on the design of shortening the distance between the first laser array layer and the second laser array layer is reduced.

Also, by combining both methods, the optical waveguide layers having an optimum thickness are formed in a state where the distance between the laser light oscillating portions located above and below is further reduced and the laser light oscillating portions are arranged closer to each other. The laser light from each laser light oscillating section can be almost completely made into one spot.
This makes it easier to focus the laser beam emitted from the semiconductor laser array element on one spot.

It should be noted that the laser light from each of the laser light oscillating portions arranged vertically can be almost completely formed into one spot only by making the distance between the laser light oscillating portions closer to each other or simply providing the optical waveguide layer. This can be done more easily by combining them. <Embodiment 7> In the present embodiment, an aggregate formed by arranging a plurality of semiconductor laser array elements according to Embodiment 6 is formed.

FIG. 12 is a perspective view including the configuration of a semiconductor laser array device according to the present embodiment (the optical system for condensing laser light is omitted). As shown in this figure, in the present semiconductor laser array device, a plurality of semiconductor laser array elements 900 (four in the figure) are horizontally arranged in the same posture with the end face 901 from which laser light is emitted facing the front. Assembly 902 and a laser beam 90 in front of it.
And a laser light feedback plate 904 disposed between the direction in which the light 3 is emitted and the parallel light generator.

Each of the semiconductor laser array elements 900 according to the sixth embodiment is such that the laser beams oscillated by the laser beam oscillating units arranged vertically form one large spot. Laser light feedback plate 904
Is provided with a predetermined light transmission property and has a row structure 902
A predetermined amount of the emitted laser beam 903 having a diffraction grating (not shown) formed on the surface 904A facing the
The light is diffracted toward 2.

Although phase locking is not performed between the semiconductor laser array elements, by providing such a laser light feedback plate 904, the emitted laser beam 9
03 is diffracted toward the aggregate 902, and the laser light emitted from the different semiconductor laser array elements is
Since the laser beam is incident (shown by a dashed arrow 905) toward the laser light oscillating portion of the adjacent semiconductor laser array element, the cavity is shared between the semiconductor laser array elements as described above. Phase locking is performed between array elements.

As a result, a higher-power laser spot can be obtained. The semiconductor laser array elements used in such a manner to be arranged on the same plane may be any of those according to the first to fifth embodiments besides the one according to the sixth embodiment. However, it is preferable to use the laser light reflected from the upper and lower laser beams as one spot because the laser light reflected by the laser light feedback plate 904 can easily enter the laser light oscillating portion of the adjacent semiconductor laser array element. .

<Eighth Embodiment> A semiconductor laser array device according to the present embodiment has an end face window structure formed in a portion of a semiconductor laser array element facing both ends in the extending direction of a laser light oscillating portion. The semiconductor laser array device is different from the above-described semiconductor laser array device LA1 and the like in that an insulating layer is formed on the surface of each electrode at a portion where the end face window structure is formed. Hereinafter, the differences will be described.

FIG. 13 is a perspective view showing a configuration of a semiconductor laser array element according to the present embodiment. As shown in this figure, Zn is diffused in portions where both ends of the laser light oscillation units 300 and 310 in the extending direction face, and Zn is diffused.
The diffusion part 1000 is formed. This Zn diffusion unit 100
0 forms an end window structure. Thus, absorption of laser light at the end portions of the laser light oscillation units 300 and 310 is suppressed, thereby suppressing heat generation.

Further, portions of the Zn diffusion portion 1000 located above the respective electrodes are SiO ₂ insulating layers 1001, 1
002, 1003, and 1004 are formed. With this configuration, power is not supplied at the end face, and the prevention of heat generation at that portion is further promoted. In the above description, in the semiconductor laser array element, between the p-type AlGaInP second cladding layer and the n-type AlInP first current blocking layer, and between the p-type AlGaInP third cladding layer and the n-type AlInP second current blocking layer. Has a direct contact structure, but a p-type InGaP etching stop layer can be provided between them. By providing the p-type InGaP etching stop layer in this way, it is possible to prevent oxidation of the surface portion on which the current blocking layer is formed. Therefore, a current blocking layer with high crystallinity can be formed.

Although the optical system 200 uses a collimating lens and a condensing lens, the light can be condensed by a hologram instead. This has the advantage that the configuration of the optical system can be made compact. Further, in the above-described embodiment, the present invention has been described by taking the red semiconductor laser as an example. However, it is of course possible to apply the above contents similarly to semiconductor lasers other than red, such as blue, green, and infrared. .

In the above description, the laser light oscillating unit is 2
Although it was laminated in layers, it is not limited to this, and three or more layers can be formed. This makes it possible to further increase the output. <Application Example> Next, an application example of the semiconductor laser array device will be described. It is needless to say that the present invention is not limited to the following uses.

(1) Red laser of AlGaInP material (wavelength 6
(55 nm to 665 nm) First, the semiconductor laser array device can be incorporated into a torch of a welding device and used for welding metal. According to this, in addition to high output, the laser beam has a color, so that it is excellent in visibility and is considered to contribute to improvement in workability of welding work. Further, the present invention can also be used for a drilling or cutting apparatus for making or cutting a printed circuit board or the like. Further, the present invention can be applied to a surface alteration processing device that performs surface alteration processing (so-called quenching).

The high-power semiconductor laser array device described above can also be used for weaving welding, which is performed in the case of welding a metal plate of a body of an automobile or the like while periodically shaking the tip of the robot left and right. By incorporating the torch in the torch, it is possible to increase the speed of the weaving. It is also effective for producing so-called dot-shaped two-dimensional matrix data, for example, a two-dimensional data matrix code that can be processed by spot light. Conventionally, YA
In general, this is performed using a G laser, but since the YAG laser has poor response, there is a problem in forming uniform dots at high speed. For example, it is not suitable for forming a matrix pattern in which irradiation is performed in a fine pulse after a non-irradiation time continues. On the other hand, the red semiconductor laser array device has excellent responsiveness and is therefore effective for forming such a matrix pattern.

In addition, the semiconductor laser can be used for medical equipment such as a laser scalpel for incision and hemostasis of a living body, a treatment for malignant tumors such as cancer, and hair restoration treatment by irradiating a living body injected with a photophilin drug. it can. (2) InGaN material blue laser (wavelength 550 nm; In
_0.5 Ga _0.5 N) Irradiates the retina and can be used to treat retinal detachment.

(3) Green laser of InGaN material (wavelength 38
0 nm; In _0.5 Ga _0.95 N) Irradiates the cornea and can be used for treatment of myopia. (4) InGaAs material infrared laser (wavelength 1060 nm; I
n _0.2 Ga _0.9 As) In addition to the welding, drilling, surface alteration, marking, laser scalpel for incision and hemostasis of living body,
It can also be used for treatment of retinal detachment by irradiating the retina via an SHG element (an element that halves the wavelength).

[0080]

As described above, the present invention relates to a first laser array layer formed by arranging a plurality of first laser beam oscillating sections partitioned by a first current block layer, A second laser light oscillation section partitioned by the second current block layer,
A second laser array layer formed in a plurality of rows,
It is characterized in that the laser light distribution regions are stacked so that at least a part of each laser light distribution region is in contact with or overlaps with each other.

Thus, it becomes possible to perform phase lock between the first laser array layer and the second laser array layer. As a result, a single high-power laser spot can be obtained when the laser light emitted from each laser array layer is collected.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an overall configuration of a semiconductor laser array device according to a first embodiment.

FIG. 2 is a vertical sectional view in FIG.

FIG. 3 is a process diagram showing a method for manufacturing an element portion of the semiconductor laser array device, and proceeds in numerical order.

FIG. 4 is a process diagram showing a method for manufacturing an element portion of the semiconductor laser array device, and proceeds in numerical order.

FIG. 5 is a process chart showing a method of manufacturing an element portion of the semiconductor laser array device, and proceeds in numerical order.

FIG. 6 is a schematic diagram specifically illustrating a resonance action in the semiconductor laser array element.

FIG. 7 is a process diagram showing one process of manufacturing an element portion of the semiconductor laser array device according to the second embodiment, and proceeds in numerical order.

FIG. 8 is a plan view showing a main structure of an element portion of the semiconductor laser array device according to the third embodiment;

FIG. 9 is a plan view showing a main structure of an element portion of a semiconductor laser array device according to a fourth embodiment;

FIG. 10 is a sectional view of an element part of the semiconductor laser array device according to the fifth embodiment, corresponding to FIG. 2;

FIG. 11 is a sectional view of an element portion of the semiconductor laser array device according to the sixth embodiment, corresponding to FIG. 2;

FIG. 12 is a perspective view showing a configuration of a semiconductor laser array device according to a seventh embodiment.

FIG. 13 is a perspective view showing an overall configuration of a semiconductor laser array device according to an eighth embodiment.

[Explanation of symbols]

106 n-type AlInP first current block layer 106A Both sides (n-type AlInP first current block layer) 106B Stripe (n-type AlInP first current block layer) 106C discontinuous portion 106D groove 106E waveguide main path 106F coupling waveguide 106G Material layer 107 p-type AlGaInP third cladding layer 108 n-type AlInP second current blocking layer 108A Both sides (n-type AlInP second current blocking layer) 108B Stripe (n-type AlInP second current blocking layer) 108C discontinuous part 108D groove 108E waveguide main path 108F coupling waveguide 108G material layer 300 laser light oscillating section 300A laser light distribution area 301 first laser array layer 310 laser light oscillating section 310A laser light distribution area 311 second laser array layer 401 Wave path 402 Resonator 403 One waveguide path 404 Resonator 405 Connection waveguide 406 Resonator 00, 510 Array structure precursor 640, 650 Waveguide 702, 703, 712, 713 Stripe 800 P-type AlGaInP optical waveguide layer 900 Semiconductor laser array element 902 Assembly 904 Laser light feedback plate 905 Reflected by laser light feedback plate and adjacent Laser beam 1000 incident on the laser array element 1000 Zn diffusion portion 1001, 1002, 1003, 1004 SiO ₂ insulating layer SP spot MA1, MA2, MA3 Mask

Continuation of the front page (72) Inventor Kunio Ito 1-1, Sachimachi, Takatsuki-shi, Osaka Matsushita Electronics Co., Ltd. (72) Inventor Masaru Satsumura 1-1-1, Sachimachi, Takatsuki-shi, Osaka Matsushita Electronics F-term (reference) 5F073 AA13 AA72 AA83 AB03 AB05 CA14 CB02 CB10 CB22 DA05 DA06 DA22 EA29

Claims (29)

[Claims] A first laser beam oscillating section partitioned by a first current block layer is partitioned by a first laser array layer formed in a plurality of rows and a second current block layer. The second laser light oscillating portion is a structure in which a plurality of second laser array layers formed in a plurality of rows are stacked so that at least a part of each laser light distribution region is in contact with or overlaps with each other. A semiconductor laser array device characterized by the above-mentioned. 2. The semiconductor laser device according to claim 1, wherein a thickness of the semiconductor layer in a portion facing the first laser light oscillation portion and the second laser light oscillation portion is adjusted, so that the first laser array layer and the second laser light oscillation portion are adjusted. 2. The semiconductor laser array device according to claim 1, wherein at least a part of each laser light distribution region with the laser array layer is in contact with or overlaps with each other. 3. An optical waveguide layer for introducing laser light oscillated by each laser light oscillating unit is formed between the first laser light oscillating unit and the second laser light oscillating unit. 3. The optical waveguide layer according to claim 1, wherein at least a part of the laser beam distribution region of the first laser array layer and the laser beam distribution region of the second laser array layer contact or overlap with each other. 4. The semiconductor laser array device according to any one of the above. 4. At least two adjacent ones of the first laser light oscillating portions in the first laser array layer and at least two adjacent ones of the second laser light oscillating portions in the second laser array layer 4. The semiconductor laser array device according to claim 1, wherein the two are optically coupled to each other. 5. The optical coupling between the first laser light oscillating portions and the optical coupling between the second laser light oscillating portions are such that a part of the first current blocking layer and a part of the second current blocking layer are elongated. 5. The semiconductor laser array device according to claim 4, wherein the coupling is performed by a coupling waveguide formed by removing a groove. 6. The optical coupling between the first laser light oscillating units and the optical coupling between the second laser light oscillating units are performed by a configuration that is curved so as to merge in a part of the extending direction. 5. The semiconductor laser array device according to claim 4, wherein: 7. The optical coupling between the first laser light oscillating portions and the optical coupling between the second laser light oscillating portions extend from first end faces that are alternately located in a direction perpendicular to a stretching direction. 5. The semiconductor laser array device according to claim 4, wherein the operation is performed between the first laser beam and the laser beam extending from the second end face. 6. 8. The optical coupling between the first laser light oscillating portions and the optical coupling between the second laser light oscillating portions are caused by the stain of the laser light in the first current blocking layer and the second current blocking layer. 5. The semiconductor laser array device according to claim 4, wherein the projection is performed by contacting or overlapping the projection regions. 9. An electrode having a first polarity is formed so as to sandwich the first laser array layer and the second laser array layer, and an electrode having a first polarity is formed between the first laser array layer and the second laser array layer. 9. The semiconductor laser array according to claim 1, wherein an electrode having a second polarity different from the first polarity is formed at an end of the surface of the conductive layer formed at the boundary. apparatus. 10. The device according to claim 1, wherein an end window structure is provided at an end of the device facing an end of the first laser array layer and an end of the second laser array layer. 3. The semiconductor laser array device according to item 1. 11. A portion provided with power supply on the surface of said end face window structure is provided with an insulating portion.
3. The semiconductor laser array device according to item 1. 12. The forbidden band width of the first current block layer and the second current block layer is a first band gap between the first current block layers and the second current block layer. The refractive index of the first current block layer and the second current block layer is larger than that of the active layer at the portion of the laser light oscillation section and the second laser light oscillation section, The semiconductor according to any one of claims 1 to 11, wherein the semiconductor laser is smaller than those of the first laser light oscillator and the second laser light oscillator located between the second current block layers. Laser array device. 13. A laser light oscillating section of a plurality of semiconductor laser array devices according to claim 1 and laser light emitted from one semiconductor laser array device to another semiconductor laser array device. A semiconductor laser array device assembly comprising: 14. Each of the semiconductor laser array devices is oscillated by a first laser beam oscillating unit and a second laser beam oscillating unit located opposite each other between a first laser array layer and a second laser array layer. 14. The semiconductor laser array device according to claim 13, wherein the laser light is distributed in a single region. 15. A laser welding apparatus for performing welding using laser light emitted by the semiconductor laser array apparatus according to claim 1. Description: 16. A two-dimensional matrix data is produced on a surface to be irradiated by irradiating a laser beam emitted by the semiconductor laser array device according to any one of claims 1 to 14 onto a surface to be irradiated. Two-dimensional matrix data producing device. 17. A semiconductor laser scalpel device, wherein the semiconductor laser array device according to any one of claims 1 to 14 irradiates the living body with a laser beam emitted by the semiconductor laser array device to cut or stop the living body. 18. A tumor treatment apparatus for treating a malignant tumor by irradiating a living body with laser light emitted by the semiconductor laser array apparatus according to any one of claims 1 to 14. 19. A hair-growth treatment device for irradiating a laser beam emitted by the semiconductor laser array device according to any one of claims 1 to 14 to a head to carry out hair-growth treatment. 20. An apparatus for treating retinal detachment by irradiating the retina with laser light emitted by the semiconductor laser array device according to any one of claims 1 to 14. 21. A myopia treatment apparatus for irradiating a laser beam emitted by the semiconductor laser array apparatus according to any one of claims 1 to 14 to the cornea to treat myopia. 22. Drilling or cutting processing by irradiating a laser beam emitted by the semiconductor laser array device according to any one of claims 1 to 14 onto an irradiation target to perform drilling or cutting processing. apparatus. 23. A surface alteration processing apparatus which performs surface alteration processing by irradiating a laser beam emitted by the semiconductor laser array device according to claim 1 onto an object to be irradiated. 24. The method of manufacturing a semiconductor laser array device according to claim 2, wherein: a first step of forming a first laser array layer in which a plurality of laser light oscillation units are arranged in line; A second step of forming a second laser array layer in which a plurality of laser light oscillating sections are arranged in line, facing the first laser array layer, MOC on the laser array layer
A method for manufacturing a semiconductor laser array device, wherein a second laser array layer is formed using a VD method or an MBE method. 25. The method of manufacturing a semiconductor laser array device according to claim 3, wherein: a first step of forming a first laser array layer in which a plurality of laser light oscillating units are arranged in line; A second step of forming a second laser array layer in which a plurality of laser light oscillating sections are arranged in line, facing the first laser array layer; MOC on the laser array layer
A method for manufacturing a semiconductor laser array device, comprising: forming an optical waveguide layer using a VD method or an MBE method, and then forming a second laser array layer by a similar method. 26. The method of manufacturing a semiconductor laser array device according to claim 2, wherein: a first step of forming a first laser array layer in which a plurality of laser light oscillating portions are arranged; A second step of forming a second laser array layer in which the laser light oscillators are arranged in a row, and a third step of bonding the first laser array layer and the second laser array layer And a method of manufacturing a semiconductor laser array device. 27. The method of manufacturing a semiconductor laser array device according to claim 3, wherein: a first step of forming a first laser array layer in which a plurality of laser light oscillating sections are arranged; A second step of forming a second laser array layer in which the laser light oscillators are arranged in a row, and a third step of bonding the first laser array layer and the second laser array layer The third step is that, after forming an optical waveguide layer on at least one of the bonding surfaces of the first laser array layer and the second laser array layer, the first step is performed via the optical waveguide layer. A method for manufacturing a semiconductor laser array device, comprising: laminating a laser array layer and a second laser array layer. 28. The method according to claim 28, further comprising, before the third step, a fourth step of subjecting at least one of the first laser array layer and the second laser array layer to a hydrophilic treatment. 27. The method according to claim 26, wherein the third step performs a heat treatment in the presence of hydrogen. 29. A fourth step of subjecting at least one of the optical waveguide layer, the first laser array layer, and the second laser array layer to a hydrophilic treatment before the third step. 28. The method according to claim 27, further comprising the step of: performing the heat treatment in the presence of hydrogen in the third step.