JP2001284660A - Display device and method of manufacturing it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a display device in which LEDs can be mounted and wired easily, can be manufactured efficiently, and can display high-quality pictures and a method of manufacturing the device. SOLUTION: In this display device, light emitting diode elements are arranged in a matrix by arranging a plurality of bar-like substrates on each of which a plurality of light emitting diode elements are linearly arranged, in the widthwise direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device and a method for manufacturing the same, and more particularly, to a display device using light emitting diode elements and a method for manufacturing the same.

[0002]

2. Description of the Related Art With the rapid development of technology in recent years, it has become possible to process a large amount of information data.
There is an increasing demand for a full-color display device capable of processing and displaying a large amount of image information. One of such display devices uses a light-emitting diode (hereinafter, referred to as an LED) element. That is, by arranging LED elements that can be driven at high luminance and low voltage in a desired shape such as a matrix and driving each of the LED elements, a display device that can obtain a desired image can be manufactured. Japanese Patent Application Laid-Open Nos. 56-1738, 5-53511 and 7-3359
No. 42, JP-A-9-197979, JP-A-1
0-22529, JP8306961, J
P73335942, JP7129097,
Many display devices in which LED elements are arranged in a matrix have been proposed as described in JP 62324456, JP 6045660, and the like.

[0003]

By the way, in the process of manufacturing such a display device, an LED is mounted on a large screen.
Are required to be mounted and wired one by one, but this process requires a very long time, and there is a problem that the manufacturing yield is lowered.

When manufacturing an LED display device, L
The conductive wire wired to the electrode taken out from the light emitting surface side of the ED element may cause malfunction, for example, by contacting the wafer on which the LED element is formed or another electrode. Therefore, an insulating film such as an oxide is formed before cleavage, and a window is formed in the electrode by lift-off, whereby contact with a wired conductor can be prevented. These oxide films are deposited by vapor deposition, sputtering, or chemical vapor deposition.
n: Hereinafter, referred to as CVD. The film formation can be performed by the method such as), but the vapor deposition method or the sputtering method cannot form a sufficient film on the side of the LED element where the pn junction is exposed, so that the insulation is not sufficient. In the CVD method, a film is formed on the side surface of the LED element. However, since the film is formed on the side surface of the resist remaining on the electrode for lift-off, lift-off cannot be performed. In addition, in consideration of handling in any of the film forming methods, since cleavage must be performed after film formation, there is a problem that the film is partially peeled off at the time of cleavage.

Accordingly, the present invention has been made in view of the above-mentioned conventional problems, and has a display device capable of easily mounting LED elements and wiring electrodes, improving production efficiency, and displaying a high-quality image. It is an object of the present invention to provide a manufacturing method thereof.

[0006]

According to the present invention, there is provided a display device comprising, as a basic unit, a rod-shaped substrate on which a plurality of light emitting diode elements are linearly arranged, and a plurality of the rod-shaped substrates are arranged in the width direction thereof. , The light emitting diode elements are arranged in a matrix.

In the display device according to the present invention, a rod-shaped substrate in which a plurality of light-emitting diode elements as a basic unit are linearly arranged is formed. They are arranged in a matrix.

Therefore, the display device according to the present invention has excellent production efficiency because the number of steps for mounting the light-emitting diode elements and the number of wirings of the electrodes are greatly reduced, and displays a high-quality image with good visibility. can do.

A method of manufacturing a display device according to the present invention is characterized in that a plurality of light emitting diode elements are linearly arranged and formed in a rod-shaped substrate, and a plurality of the rod-shaped substrates are arranged in the width direction thereof. Are arranged in a matrix.

In the method of manufacturing a display device according to the present invention, a plurality of light emitting diode elements are linearly arranged and formed in a rod-shaped substrate, and the plurality of rod-shaped substrates are arranged in the width direction thereof. Are arranged in a matrix to constitute a display device.

Therefore, according to the method of manufacturing a display device according to the present invention, the number of steps for mounting the light emitting diode element and the number of wirings of the electrodes can be greatly reduced, so that the display device can be simply and efficiently manufactured. And a display device capable of displaying high-quality images with good visibility can be manufactured.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings. Note that the present invention is not limited to the following examples, and can be appropriately changed without departing from the gist of the present invention.

FIG. 1 is a partial longitudinal sectional view showing the structure of an LED display device to which the present invention is applied. The LED display device includes a first substrate 1 and an LE mounted on the first substrate 1.
Middle unit 2 of D element (hereinafter referred to as middle unit 2)
And a small unit 3 of LED elements mounted on the middle unit 2 (hereinafter, referred to as a small unit 3).

The first substrate 1 is for mounting the middle unit 2 and is made of an insulating material. As a material used for the first substrate 1, specifically, a resin or the like can be used. On the first substrate 1,
The configuration is such that a predetermined number of middle units 2 can be mounted, for example, nine (3 × 3) middle units 2 can be mounted. The portion on the bottom upper surface of the first substrate 1 where each of the middle units 2 is mounted has a shape that fits with the lower portion of the middle unit 2, and a positioning pin post 4 provided on the middle unit 2, which will be described later. A positioning hole to be fitted is provided. Then, in the portion where the middle units 2 are adjacent to each other, the middle units 2 are separated from each other,
In addition, a partition 5 for fixing is provided. Further, a fixing bolt hole 7 through which a fixing bolt 6 of the below-described middle unit 2 is provided is provided at the center of the portion where each middle unit 2 is mounted. When the middle unit 2 is mounted on the first substrate 1, the fixing bolt 6 is passed through the fixing bolt hole 7, and is fixed to the first substrate 1 by the nut 8.
On the other hand, on the outer peripheral portion of the first substrate 1, an outer peripheral wall 9 for fixing the middle unit 2 is provided. Therefore, with the above configuration, the middle unit 2 is securely fixed to the first substrate 1.

The middle unit 1 is for mounting the small unit 3 and includes the small unit 3 and the second substrate 10.
, A driver chip 11 and a support case 12. The middle unit 2 is configured so that a predetermined number of small units 3 can be mounted thereon. For example, nine middle units 2 (3 × 3) can be mounted. FIG. 2 is a longitudinal sectional view illustrating the configuration of the middle unit 2.

The second substrate 10 is for mounting the small unit 3 and is made of an insulating material. As a material used for the second substrate 10, specifically, a glass epoxy resin or the like can be used. On the surface of the second substrate 10, that is, on the main surface on which the small unit 3 is mounted, for example, a pattern of gold electrodes is printed as shown in FIG. 3, and a through hole 13 is provided at a predetermined position. The small unit 3 mounted thereon is electrically connected to a driver chip 11 described later.

The driver chip 11 is for driving the LED element, and is arranged on the back surface of the second substrate 10, that is, on the main surface opposite to the side on which the small unit 3 is mounted. Thus, by arranging the dedicated driver chip 11 for each of the middle units 2 and independently controlling a predetermined number of LED displays, it is possible to lower the system clock frequency.

Instead of using the driver chip 11, on the back surface of the second substrate 10, that is, on the main surface opposite to the side on which the small unit 3 is mounted, for example, as shown in FIG. May be formed, a connector may be attached thereto, and the drive circuit may be connected to a separately arranged drive circuit.

The support case 12 protects the driver chip 11 and the like and mounts the middle unit 2 on the first substrate 1 with high precision. The support case 12 covers the side and lower portions of the second substrate 10. It is composed of A unit position identification electrode 14 for identifying the position of the unit, a power supply 15, a signal bus line 16, and the like are provided below the support case 12. A fixing bolt 6 for fixing the middle unit 2 to the first substrate 1 is provided at a lower central portion of the support case 12. By using the fixing bolts 6, the middle unit 2 is securely fixed to the first substrate 1. A positioning pin post 4 that fits into the above-described positioning hole provided in the first substrate 1 is provided on a lower outer peripheral portion of the support case 12. The middle unit 2 is accurately and easily arranged at a predetermined position on the first substrate 1 by fitting the positioning pin post 4 and a positioning hole provided in the first substrate 1. , Quality and productivity are both excellent.

The small unit 3 is for mounting an LED rod-shaped substrate, and includes an LED rod-shaped substrate and a third substrate.

Here, the LED rod-shaped substrate is shown in FIGS.
As shown in FIG. 1, a rod-shaped substrate in which a plurality of LED elements are linearly arranged on a substrate used for crystal growth of the LED element. FIG. 5 is a plan view of the LED rod-shaped substrate, and FIG. 6 is a partially enlarged perspective view of the LED rod-shaped substrate. Here, a common n-electrode common to all the elements on the LED rod-shaped substrate is provided on the back surface of the LED rod-shaped substrate, that is, on the main surface opposite to the side on which the LED elements are formed. Thus, LE
By forming a common n-electrode for all the LED elements on the D-shaped substrate 16, a simple wiring structure can be obtained without requiring complicated wiring. Further, since no wiring is provided for each LED element, the reliability of the electrical connection of the wiring is high.

The third substrate 17 is for mounting the small unit 3, and is made of an insulating material. As a material used for the third substrate 17, specifically, a glass epoxy ceramic resin or the like can be used.

As shown in FIGS. 7 and 8, the third substrate 17 is configured so that a predetermined number of LED rod-shaped substrates 16 can be mounted thereon. L
The ED bar-shaped substrate 16 is configured to be mounted. Third
As shown in FIG. 9, a portion of the main surface of the substrate 17 on which the LED rod-shaped substrate 16 is mounted on which the LED rod-shaped substrate 16 is mounted has a width of the LED rod-shaped substrate 16 for mounting the LED rod-shaped substrate 16 as shown in FIG. A guide groove 20 having a width substantially equal to that of the guide groove 20 is formed. The LED rod-shaped substrate 16 is mounted in the guide groove 20 by using a connecting means 22 having conductivity.

Here, the depth of the guide groove 20 is smaller than the sum of the thickness of the above-mentioned conductive connecting means 22, for example, the thickness of the adhesive film and the thickness of the LED rod-shaped substrate 16, and is smaller than the thickness of the connecting means 22. Is also set deeply. Guide groove 20
Is deeper than the sum of the thickness of the connection means 22 and the thickness of the LED rod-shaped substrate 16, the conduction of a p-electrode, which will be described later, formed on the LED element 19 cannot be obtained, or the conduction of the p-electrode can be reduced. This is because it may be difficult to take. If the depth of the guide groove 20 is smaller than the thickness of the conductive connection means 22, the LED rod-shaped substrate 16
This is because the connection means 22 may protrude from the guide groove 20 and may be electrically connected to the adjacent LED element 19 when the device is mounted.

As shown in FIG. 10, an n-electrode terminal 21 for driving the LED element 19 is formed at the bottom of the guide groove 20 along the shape of the guide groove 20. The LED bar-shaped substrate 16 is mounted thereon.
Thereby, the common n-electrode provided on the back surface of the LED rod-shaped substrate 16, that is, the main surface opposite to the side on which the LED element 19 is formed, and the n-electrode terminal 21 provided on the guide groove 20 are electrically conductive. Is conducted through the connection means 22 having That is, each LED element 19 and the third substrate 17 are electrically connected.

At a predetermined position of each n-electrode terminal 21, a through-hole 23 is formed through the third substrate 17 as well. The electrical connection of the n-electrode is collectively taken on the back surface of the third substrate 17 by forming the through hole 23, that is, on the main surface of the third substrate 17 opposite to the surface on which the LED rod-shaped substrate 16 is mounted. Can be. This allows
The reliability is superior to the case where wiring is provided to each of the LED elements 19 and the n-electrodes are electrically connected. This through-hole 23 is provided for one LED rod-shaped substrate 1.
One piece may be formed for each 6, but a plurality of pieces may be formed in order to further enhance the reliability of electrical connection.

Further, a partition wall 24 for separating and fixing the LED rod-shaped substrates 16 is provided along the longitudinal side surface of the LED rod-shaped substrates 16 at portions where the LED rod-shaped substrates 16 are adjacent to each other. I have. And this partition 2
4 is, for example, L
A wide partition wall 25 is provided every 163 ED rod-shaped substrates,
The partition located between the wide partitions 25 is a narrow partition 26. Further, p electrode terminals 27 are respectively formed on the wide partition walls 25, and as shown in FIG.
By connecting the electrode terminals 27 and the LED elements 19 sandwiched between the respective p electrode terminals 27 by wires, the p electrodes of the respective LED rod-shaped substrates 16 are electrically connected.

In the present invention, as a first modification of the small unit 3, as shown in FIGS. 12 and 13, a transparent substrate 29 having a p-electrode wiring 30 formed of a conductive material is used.
May be mounted on the third substrate 17 on which the LED rod-shaped substrate 16 is mounted to perform electrical connection of the p-electrode. Here, in this specification, the transparent substrate 29 means a substrate that can transmit visible light. Figure 12 is a plan view of a first modification of the small-unit 3, Fig. 13, X ₁ in FIG. 12
It is a longitudinal sectional view of -X _2. That is, the first modified example is a third substrate 17 on which the LED rod-shaped substrate 16 is mounted.
In addition, a transparent substrate 29 having a linear p-electrode wiring 30 formed on one main surface of a conductive material is mounted thereon.
At this time, on the wide partition wall 25 and each LED rod-shaped substrate 1
6, each p electrode terminal 27 is formed,
The electrode terminals 27 are formed so as to be aligned in the width direction of the LED rod-shaped substrate 16. Then, the transparent substrate 2 is arranged such that the p-electrode wiring 30 is in contact with these p-electrode terminals 27.
9 are placed. By adopting such a structure,
The p-electrode terminal 27 of each LED rod-shaped substrate 16 is
9 are electrically connected by the p-electrode wiring 30 formed thereon. Then, by using the transparent substrate 29 as the substrate to be mounted on the LED element 19, it is possible to take out the LED element 19 in a good state without hindering the light emission.

Further, as a second modified example of the small unit 3, as shown in FIGS. 14 and 15, an opaque substrate 31 is used instead of the transparent substrate 29 in the first modified example described above. A light extraction window 32 is provided in a portion above the element 19.
May be provided. Here, in this specification, the opaque substrate 31 means a substrate through which visible light cannot be transmitted. Figure 14 is a plan view of a second modification of the small-unit 3, FIG. 15 is a longitudinal sectional view of the X ₃ -X ₄ in Fig. 14. That is, the second modified example is the LED rod-shaped substrate 1.
An opaque substrate 31 having a linear p-electrode wiring 30 formed of a conductive material is placed on a third substrate 17 on which the substrate 6 is mounted. At this time, each p-electrode is formed on the wide partition wall 25 and each LED rod-shaped substrate 16, and the p-electrodes are formed so as to be aligned in the width direction of the LED rod-shaped substrate 16. . Then, the p-electrode wiring 3 is provided on these p-electrodes via conductive connection means 22.
The opaque substrate 32 is placed so that 0 contacts. Furthermore,
The opaque substrate 31 has a structure in which a light extraction window 32 is provided at a predetermined portion overlapping the LED element 19. With such a structure, the p-electrode of each LED bar-shaped substrate 16 is electrically connected by the p-electrode wiring 30 formed on the opaque substrate 31. And the opaque substrate 3
1, the light extraction window 32 is provided, so that light emitted from the LED element 19 can be extracted in a favorable state by the light extraction window 32 without using a transparent substrate.

In this case, as shown in FIG. 16, an optical lens 33 or a diffusion plate may be provided in the light extraction window 32 for diffusing light. As described above, by providing the light extraction window 32 with the optical lens 33 and the diffusion plate, it is possible to prevent the light emitted from the LED element 19 from being diffracted, and to extract the light in a better state. Therefore, a better image can be obtained.

Further, as a third modified example of the small unit 3, as shown in FIGS. 17 and 18, a bar-shaped wiring 34 made of a conductive material is
It is good also as a structure arranged above. FIG. 17 shows the small unit 3.
FIG. 18 is a plan view of a third modified example of FIG.
₅ is a longitudinal sectional view of -X _6.

That is, a p-electrode terminal 27 is formed on the wide partition wall 25 and each LED rod-shaped substrate 16 in the same manner as in the first and second modifications.
Are formed so as to be aligned in the width direction of the LED rod-shaped substrate 16. Then, on the straight line connecting these p-electrode terminals 27, bar-shaped wires 34 made of a conductive material are arranged as the p-electrode wires 30 so that the bar-shaped wires 34 and the respective p-electrode terminals 27 are in contact with each other. Thereby, each p electrode terminal 27
An electrical connection can be made between them. At this time, fixing members 35 made of an elastic body are attached to both ends of the rod-shaped wiring 34 made of a conductive material, and the rod-shaped wiring is fixed to the third substrate 17 by the elastic force of the fixing member 35. It is said. Here, a spring or the like can be suitably used as the fixing tool 35.

In the LED display device configured as described above, a predetermined number of the LED elements 19 are arranged in the longitudinal direction of the LED elements 19 on the substrate used for the crystal growth of the LED elements 19 to form the LED rod-shaped substrate 16. . And this LE
The small unit 3 is formed by arranging the D-shaped substrates 16. This eliminates the necessity of arranging the LED elements 19 one by one, resulting in excellent production efficiency.

Regarding the wiring of the electrodes, at the n-electrode, the back surface of the LED rod-shaped substrate 16, ie, the LED element 19
In order to provide a common n-electrode on the side opposite to the side where
The number of wirings is greatly reduced, the wiring configuration is simplified, and the production efficiency and wiring reliability are improved.

Then, the electrodes are integrated on the back surface of each substrate using the through holes 23, and only the minimum electrode wiring exists on the surface of the display screen. A defect such as inability to display image information due to a conspicuous boundary does not occur, and a high-quality image with good visibility and good visibility can be displayed.

The LED display device configured as described above can be manufactured as follows.

First, molecular beam epitaxial growth (Molecu
lar beam epitaxy, hereinafter referred to as MBE. 3) An epi-wafer is manufactured by a method or the like.

Next, an LED element is manufactured on the epi-wafer by the following method, and an LED rod-shaped substrate is manufactured.

First, electrode pads are formed on the epi-wafer. The epi-wafer is washed and pre-treated with a coupling agent or the like. Next, a resist is applied to the main surface of the epiwafer on the side on which the LED elements are to be formed by a spin coater, and exposure and development are performed using a photomask corresponding to the size and shape of the electrode pad. After development, for example, Ti and A
are formed to a film thickness of 10 nm and 200 nm, respectively, by an evaporation method, and lift-off is performed with acetone to form an electrode pad.

Next, a transparent electrode is formed. The epi-wafer on which the electrode pads are formed is washed and pre-treated with a coupling agent or the like. Next, a resist is applied to the main surface of the epi-wafer on the side on which the LED elements are to be formed by a spin coater,
Exposure and development are performed using a photomask corresponding to the size and shape of the transparent electrode to be formed. After the development, for example, a film of Au is formed to a film thickness of 10 nm by an evaporation method, and lift-off is performed with acetone to form a transparent electrode.

Next, element isolation is performed. The epi-wafer on which the transparent electrode is formed is washed and pre-treated with a coupling agent or the like. Next, a resist is applied to the main surface of the epiwafer on the side on which the LED elements are to be formed by a spin coater, and L is formed.
Exposure and development are performed using a photomask corresponding to the size and shape of the ED element. Then, after the development, the element is separated by, for example, etching in a mixed solution of phosphoric acid and hydrogen peroxide.

Next, an insulating film is formed. The epi-wafer having undergone the element separation is cleaned and subjected to a pretreatment with a coupling agent or the like. Next, a resist is applied to the main surface of the epi-wafer on the side on which the LED elements are to be formed by a spin coater, and exposure and development are performed using a photomask corresponding to the size and shape of the transparent electrode to be formed. Then, after development, for example, a SiO ₂ film is formed to a thickness of 200 nm by a sputtering method,
An insulating film is formed by performing lift-off with acetone.

Next, the back surface of the epi-wafer is polished. A photoresist is applied by a spin coater as a protective film on the surface of the epiwafer on which the insulating film is formed, on the side on which the electrode pads and the like are formed. Then, using a polishing machine or the like, the LED element 19 is used.
The back surface of the epiwafer, that is, the main surface on the side opposite to the side on which the electrode pads and the like are formed, is polished until the thickness of the substrate becomes, for example, about 100 μm.

Next, an n-electrode is formed. An oxide film formed on the back surface of the polished epiwafer, that is, the main surface on the polished side is removed by wet etching or the like.
Next, the photoresist formed as a protective film on the surface of the epiwafer, ie, the surface on which the electrode pads and the like are formed, is removed with acetone or the like, and Pd is applied to the back surface of the epiwafer, ie, the main surface on the side on which wet etching is performed. , AuGe
Alloy, Ti, Au film thickness 10nm, 150n respectively
The film is formed to a thickness of about 50 nm, about 400 nm, by a vapor deposition method. Next, for alloying, for example, a heat treatment is performed at 180 ° C. for 5 minutes in an inert gas atmosphere containing about 24% of hydrogen to form an n-electrode.

Next, cleavage is performed. In the epi-wafer on which the n-electrode is formed, a scribing device is used to make a scribing line every other LED element 191 in the longitudinal direction of the LED element 19, and in the width direction of the LED element 19, for example, LE
Cleavage is performed by inserting a scribe line at every tenth D element to produce an LED rod-shaped substrate 16 as shown in FIG.

Next, a small unit of the LED element 19 is manufactured. First, a third substrate 17 as shown in FIG. 10 is manufactured using an insulating material. This third substrate 1
Specifically, glass epoxy resin or the like can be used as the material used for 7.

To manufacture the third substrate 17, first, a substrate material having a predetermined thickness is cut into, for example, a size of 1 cm long × 1 cm wide. A guide groove 20 having a width substantially equal to the width of the LED rod-shaped substrate 16 for mounting each LED rod-shaped substrate 16 on the main surface of the third substrate 17 on the side on which the LED rod-shaped substrate 16 is mounted, and adjacent LEDs LE on which partition walls for separating and fixing rod-shaped substrates 16 are mounted
The D-shaped substrate 16 is formed along the longitudinal direction. And
At the bottom of the guide groove 20, an n-electrode terminal for driving the LED element 19 is formed along the shape of the guide groove 20. Then, at a predetermined position of each n-electrode terminal, a through-hole 23 that penetrates the third substrate 17 is formed. By forming the through holes 23 in this manner, the electrical connection of the n-electrode is collectively performed on the back surface of the third substrate 17, that is, the main surface of the third substrate 17 opposite to the surface on which the LED rod-shaped substrate 16 is mounted. You can take it. Thereby, the LED element 16
In this case, the number of wirings can be greatly reduced as compared with the case where wiring is performed on each of the n-electrodes and the n-electrodes are electrically connected, and the production efficiency can be particularly improved. Further, the reliability of the electrical connection can be improved. At this time, one through-hole 23 may be formed per one LED rod-shaped substrate 16, but a plurality of through-holes 23 may be formed to further increase the reliability of electrical connection. Further, by using the through hole 23, a structure can be easily obtained in which the rear surface of the third substrate 17 is connected to the drive circuit via the middle unit.

The partition walls 24 are formed as wide partitions 25 on a predetermined number of LED rod-shaped substrates 16, for example, on every three LED rod-shaped substrates. It is formed as a partition 26 having a small width. Then, p is formed on the wide partition wall 25 as follows.
An electrode terminal 27 is formed.

First, copper is removed using a desired metal mask.
8 μm is deposited. Next, using the same mask, Ni and gold are sequentially deposited to a thickness of 0.4 μm and 0.3 μm, respectively, to form a p-electrode terminal 27. The p-electrode terminal 27 is
The p electrode terminal 27 formed on the wide partition wall 25 and the LE
The LED element 16 is formed so that a straight line connecting to the p-electrode terminal 27 formed on the D element 19 is parallel to the width direction of the LED element 16.

Then, at a predetermined position of the p electrode terminal 27,
A through hole 23 is also formed through the third substrate 17. By forming the through-holes 23 in this manner, the electrical connection of the n-electrodes is collectively performed on the back surface of the third substrate 17, that is, on the main surface of the third substrate 17 opposite to the surface on which the LED rod-shaped substrate 16 is mounted. Can be taken. As a result, it is possible to significantly improve the production efficiency as compared with the case where wiring is performed on each of the LED elements 191 and the n-electrodes are electrically connected, and the reliability of the electrical connection is excellent. can do. At this time, the through hole 2
One LED 3 may be formed for one LED rod-shaped substrate 16, but a plurality of LED's 3 may be formed to further improve the reliability of electrical connection. Further, by using the through hole 23, a structure can be easily obtained in which the rear surface of the third substrate 17 is connected to the drive circuit via the middle unit.

Next, the LED rod-shaped substrate 16 manufactured as described above is mounted in the guide groove 20 of the third substrate 17 by using the connecting means 22 having conductivity. As the conductive connection means 22, for example, a conductive adhesive film, silver paste, cream solder, or the like can be suitably used. Then, the wiring of the n-electrode is completed by mounting the LED rod-shaped substrate 16 on the third substrate 17.

Next, wiring for the p-electrode is performed. In order to perform wiring of the p-electrode, first, as shown in FIG.
Wiring is performed between adjacent p-electrode terminals 27 formed on the substrate 5 by wire bonding.

Next, as shown in FIG.
Using the end needle 36 on the p-electrode on the ED element 19, wire 2
8 is pressed and heated at a predetermined temperature, and the LED rod-shaped substrate 16 is pressed.
Of the wire 28 and the LED element 19 by simultaneously applying a pressure equal to or less than the wall opening strength of the
The upper p-electrode terminal 19 can be connected. Here, the heating temperature, the pressing force, and the frequency of the ultrasonic wave may be appropriately set according to the materials and dimensions of the wires 28 and the LED rod-shaped substrate 16. Furthermore, by using a silver paste for reinforcement, connection can be made more reliably.

In the case of the first modification of the small unit 3 described above, the wiring of the p-electrode can be performed as follows.

First, the p-electrode wiring 3 is placed at a predetermined position on one main surface of the transparent substrate 29 having substantially the same dimensions as the third substrate 17.
For example, an Au stripe having a width of 100 μm and a pitch of 1.0 mm is formed by a lift-off method as 0. Here, as the transparent substrate 29, for example, a transparent glass substrate or the like can be suitably used.

Next, a positive photoresist is applied to a thickness of, for example, about 10 μm on the transparent substrate 29 using a spin coater, and a heat treatment is performed at a predetermined temperature. Thereafter, exposure is performed using a photomask having a desired pattern, and development is performed. Here, when a transparent glass substrate is used as the transparent substrate 29, the adhesion between glass and Au is poor.
For example, adhesion can be improved by forming a film of about 5 nm on a transparent glass substrate as a base layer of Ti, Cr, or the like, and forming Au on the base layer by an electron beam evaporation method or the like.

Next, by performing lift-off in acetone, an Au stripe, that is, the p-electrode wiring 30 can be formed.

Next, the Au stripe on the transparent substrate 29, the electrode pads on the LED elements 19 and the third substrate 17
The cream solder is arranged on a predetermined portion to be connected to the p electrode terminal 19 of FIG. Then, the transparent substrate is mounted on the small unit substrate using a flip chip bonder such that the main surface of the transparent substrate 29 on which the Au stripe is formed and the LED rod-shaped substrate 16 are opposed to each other, and these are connected by reflow.

In the case of the second modification of the small unit described above, wiring of the p-electrode can be performed as follows.

First, in the same manner as in the first modification, on one main surface of an opaque substrate 31 having substantially the same dimensions as the third substrate 17, Au having a width of, for example, 100 μm and a pitch of 1.0 mm is formed as a p-electrode wiring 30. Stripes are formed by a lift-off method. Here, a resin or the like can be suitably used as the opaque substrate 31.

Next, a positive type photoresist is applied on the opaque substrate 31 using a spin coater to a thickness of, for example, about 10 μm, and is subjected to a heat treatment at a predetermined temperature. Thereafter, exposure is performed using a photomask having a desired pattern, and development is performed.

Next, by performing lift-off in acetone, an Au stripe, that is, a p-electrode wiring can be formed.

Next, the Au stripe on the opaque substrate 31, the electrode pads on the LED element 19 and the third substrate 17
The cream solder is arranged at a predetermined portion to be connected to the p electrode terminal 27 of FIG. Then, the opaque substrate 31 is mounted on the small unit substrate using a flip chip bonder such that the main surface of the opaque substrate 31 on which the Au stripe is formed and the LED rod-shaped substrate 16 are opposed to each other, and these are connected by reflow. Next, a light extraction window 32 is formed in a portion of the opaque substrate 31 above the LED element 19. The light extraction window 32 can be formed by preparing a desired mold and performing injection molding to form the light extraction window on a portion of the opaque substrate on the LED element. By attaching the optical lens 33 and the diffusion plate to the light extraction window 32 formed as described above, it becomes possible to extract the light from the LED element 19 in a better condition. In addition, the third unit of the small unit described above
In the case of the modified example, the p-electrode wiring can be performed as follows.

That is, a p-electrode terminal 27 is formed on the wide partition wall 25 and each LED rod-shaped substrate 16 in the same manner as in the first and second modifications.
Are formed such that a straight line connecting the p-electrode terminal 27 formed on the wide partition wall 25 and the p-electrode terminal 27 formed on the LED element 19 is parallel to the width direction of the LED element 19. . Then, on the straight line connecting these p-electrode terminals 27, bar-shaped wires 34 made of a conductive material are arranged as the p-electrode wires 30 so that the bar-shaped wires 34 and the respective p-electrode terminals 27 are in contact with each other. Thus, electrical connection can be established between the respective p electrode terminals 27. At this time, fixing members 35 made of an elastic body are attached to both ends of the rod-shaped wiring 34 made of a conductive material. Then, a pressure is applied between the bar-shaped wiring 34 and the third substrate by the elastic force of the fixing tool 35, and the structure is fixed by bringing the rod-shaped wiring 34 into contact with the third substrate. Here, a spring or the like can be suitably used as the fixing tool 35.

Next, a protective film is formed. The small unit 3 on which the mounting of the LED rod-shaped substrate 16 and the wiring of the p-electrode are provided,
It is inserted into a mold that has the same shape as the small unit 3 and has a structure that covers the main surface of the small unit 3 other than the main surface on the side where the LED bar-shaped substrate 16 is mounted. Then, a protective film material is applied only to the surface of the main surface of the small unit 3 on which the LED rod-shaped substrate 16 is mounted, and is cured to form a protective film.
Acrylic or the like can be suitably used as a material for the mold. Further, as the protective film, a material having an insulating property, a transparency, a small curing shrinkage, and a heat resistance of about 200 ° C. can be used. Epoxy resin or the like can be suitably used as a material satisfying such conditions. Then, after the protective film is cured, the protective film can be formed only on the main surface of the small unit 3 on which the LED rod-shaped substrate 16 is mounted by peeling off the mold.

Next, the small unit 3 is mounted on the middle unit 2. In the above, mounting and wiring of the LED rod-shaped substrate 16,
The small unit 3 on which the protective film has been formed is mounted on the second substrate 10 by reflow.

On the second substrate 10, a pattern as shown in FIG. 3 is formed in advance on the main surface on the side where the small unit 3 is mounted. This pattern and n drawn on the back surface of the small unit 3, that is, the surface opposite to the surface on which the LED rod-shaped substrate 16 is mounted
The small unit 3 and the middle unit 2 can be electrically connected by contacting the electrode and the p electrode.

Further, the second substrate 10 is provided on the back surface of the second substrate 10,
Is formed on the main surface on the side opposite to the side on which is mounted. By forming the through holes 13, the surface of the second substrate 10, that is, the surface on which the small unit is mounted, and the back surface, that is, the surface on the side opposite to the side on which the small unit 3 is mounted can be electrically connected. Next, the second substrate 1
For example, cream solder is arranged on the main surface on the side on which the small unit 3 of 0 is mounted, and the small unit 3 is mounted on the middle unit substrate by a flip chip bonder. Then, heat treatment is performed at a predetermined temperature, for example, about 200 ° C., and the small unit and the middle unit 2 are connected. Thereby, the small unit 3
And the middle unit 2 are electrically connected.

Next, the driver chip 11 is mounted on the back surface of the second substrate 10, that is, on the main surface opposite to the side on which the small units 3 are mounted. As a result, the small unit 3 is electrically connected to the driver chip 11 via the middle unit 2 and the above-described through hole 13. At this time, instead of mounting the driver chip 11, the second substrate 10
4 is formed on the back surface, i.e., the main surface opposite to the main surface on which the small unit 3 is mounted, and a connector is mounted as shown in FIG. It may be manufactured as such a structure.

Next, the support case 12 is mounted so as to cover the side surface and the lower portion of the second substrate 10. A unit position identification electrode 14 for identifying the position of the unit, a power supply 15, a signal bus line 16, and the like are provided below the support case 12.

Further, on the outer periphery of the lower part of the support case 12,
A positioning pin post (4) that fits into a positioning hole provided in the first substrate (1) is formed.

In the center of the lower part of the support case 12,
A fixing bolt 6 for fixing the middle unit 2 to the first substrate 1 is provided. By using this fixing bolt 6,
The middle unit 2 can be reliably fixed to the first substrate 1.

Therefore, by mounting the support case 12, the driver chip 11 and the like can be protected and the middle unit 2 can be easily and accurately mounted on the first substrate 1.

Next, the middle unit 3 is mounted on the first substrate 1. At this time, a positioning hole to be fitted with the above-described positioning pin post 4 is formed at a predetermined position of the first substrate 1. Further, a fixing bolt hole 7 through which the above-mentioned fixing bolt 6 is provided is provided at a central portion of a portion of the first substrate 1 where each of the middle units 2 is mounted. When the middle unit 2 is mounted, a partition wall 5 for separating and fixing the middle units 2 is formed in a portion where the middle units 2 are adjacent to each other. On the other hand, the middle unit 2
The outer peripheral wall 9 is provided to fix the outer peripheral wall.

Then, the positioning pin post 4 formed in the middle unit 3 and the positioning hole formed in the first substrate 1 are fitted to each other, so that the first substrate 1 can be accurately and simply formed.
The middle unit 3 can be mounted on the upper predetermined position. Also, at this time, the fixing unit 6 can be securely fixed to the first substrate 1 by passing the fixing bolt 6 through the fixing bolt hole 7 and fixing the fixing unit 6 to the first substrate 1 with the nut 8. .

As described above, a large-screen LED display device can be manufactured.

The LED display device obtained above is
A predetermined number of LEs are provided on the substrate used for crystal growth of LED elements.
The D element is arranged in the longitudinal direction of the LED element to form an LED rod-shaped substrate. A small unit is formed by arranging the LED rod-shaped substrates. Thus, L
Since it is not necessary to arrange the ED elements one by one, it is possible to efficiently and easily mount the LED elements.

As for the electrode wiring, a common n-electrode is provided on the back surface of the LED rod-shaped substrate, that is, on the side opposite to the side on which the LED elements are formed, so that the number of wirings is greatly reduced. Can be efficiently and simply performed, and the production efficiency and the reliability of the wiring can be significantly improved.

Then, the electrodes are integrated on the back surface of each substrate by using through holes, and only a minimum of electrode wires are present on the surface of the display screen. Can prevent the occurrence of problems such as inability to display image information due to being noticeable,
It is possible to obtain a display device which can display a high-quality image with good visibility and good visibility.

In the above description, in order to prevent a short circuit between the pn junction of the LED elements and between the LED elements, etc.
In the process of manufacturing the rod-shaped substrate, an insulating film is formed on the LED element before cleavage, but an insulating film can be formed by the following method to prevent short circuit.

First, in the above-described manufacturing method, the LED rod-shaped substrate 16 is mounted on the guide groove 20, and after the wiring of the n-electrode is completed, the third substrate 17 is mounted on the main surface on the side on which the LED rod-shaped substrate 16 is mounted. A photoresist is applied with a spin coater.

Next, the electrode pad of the LED element 19 is exposed using a light beam. The exposure can be performed, for example, by directly drawing on the electrodes with a laser beam using a light direct drawing device 37 shown in FIG. The optical direct drawing apparatus 37 will be briefly described. The optical direct drawing apparatus 37 includes a laser beam transmitter 38 and a galvanomirror 3
9 and an XY stage 40, and the LED bar-shaped substrate 16 is fixed at a predetermined position on the XY stage 40. The laser beam oscillated from the laser beam transmitter 37 is transmitted through the galvanomirror 39 to the XY stage 4.
A predetermined position of the LED rod-shaped substrate 16 placed on the substrate 0 is irradiated to perform exposure. Laser beam scanning
The scanning in the X direction, that is, in the width direction of the LED rod-shaped substrate 16 is performed by the galvanometer mirror 39, and the scanning in the Y direction, that is, the LE direction is performed.
The scanning in the longitudinal direction of the D-shaped substrate 16 is performed by moving the XY stage 40 on which the LED-shaped substrate 16 is mounted. Here, the light beam has an oscillation wavelength 413
nm Kr laser or the like can be suitably used. Then, by performing development with a predetermined developing solution, an insulating film 41 is formed on the main surface of the third substrate on the side where the LED rod-shaped substrate 16 is mounted.

Thus, the LED on the third substrate 17
By forming the insulating film 41 on the main surface on the side on which the bar-shaped substrate 16 is mounted, not only the insulating effect on the LED elements 19 but also the main surface on the side of the third substrate 17 on which the LED bar-shaped substrate 16 is mounted is provided. An insulating effect between the upper wirings can also be obtained.

Since the groove between the LED rod-shaped substrates 16 on the third substrate 17 is filled with the insulating film 41, the LE
Since an insulating effect can be obtained up to the side surface of the D-shaped substrate 16, short-circuiting of the pn junction of the LED element 19 can be prevented.

Further, since the groove between the LED rod-shaped substrates 16 is filled with the insulating film 41 on the third substrate 17, it is possible to perform wiring by screen printing when wiring the p-electrode, thereby improving production efficiency. Can be improved. Note that the wiring of the p-electrode may be performed by wire bonding.

Further, since exposure is performed by direct writing with a light beam using the optical direct writing apparatus 37, the third substrate 17 is exposed.
Exposure can be performed with good accuracy without being affected even when the LED rod-shaped substrate 16 is displaced above, or when the thickness of the LED rod-shaped substrate 16 varies, etc. Yield can be significantly improved.

In addition, displacement of the LED rod-shaped substrate 16 and
When the variation in the thickness of the LED bar-shaped substrate 16 is small, by performing exposure using a photomask, it is possible to perform exposure efficiently in a short time, and to improve production efficiency.

Therefore, by using the above method, the production yield and the production efficiency can be improved.

In the above description, the exposure is performed by direct writing using a light beam. However, the exposure may be performed using a photomask and light transmitted through the photomask.

Further, the insulating film can be removed by irradiating the insulating film with a light beam having a sufficiently high energy necessary to decompose the insulating film, and the electrode can be exposed from the insulating film.

[0091]

The present invention will be described below with reference to specific examples.

Example 1 An LED display device was manufactured based on the embodiment described above.

First, an epiwafer as shown below was manufactured by the MBE method. Substrate: GaAs (100) Si-doped 1-2 × 10 ¹⁸ cm ⁻³ Buffer layer: GaAsSi-doped 100-200 nm Buffer layer: ME epitaxial (Zn / Sn25 period) Buffer layer: ZnSe: Cl 10 nm Concentration 1 × 10 ¹⁸ -2 × 10 ¹⁸ cladding layer: ZnMgSSe: Cl 11 μm concentration 2 × 10 ¹⁷ cm ⁻³ MQW active layer: ZnCdSe ³ QW 2 nm undoped / ZnSSe barrier layer: about 5 nm undoped 2 W cladding layer: ZnMgSSe: N 0.8 nm concentration 5 × 10 ¹⁷ cm ^{− 3} Na-Nd = 1 × 10 ¹⁷ cm ⁻³ Contact layer: ZnSSe: N 150 nm concentration 2 × 10 ¹⁸ cm ⁻³ Na-Nd = 5 × 10 ¹⁷ cm ⁻³ Contact layer: ZnSe: N 130 nm concentration 2 × 10 ¹⁸ cm ^-3 Na-Nd = about 1 x 10 ¹⁷ cm ^-3 Contact layer : ZnSe: N 5 nm / ZnTe: N 5 nm SL grade structure Concentration Na-Nd is the same as ZnNd or ZnTe Contact layer: ZnTe: N 8 nm Concentration 1 × 10 ¹⁹ to 1 × 10 ²⁰ cm ⁻³ p concentration = 2 In the above description, the composition of ZnCdSe in the active layer has a wavelength of 4 × 10 ¹⁹ cm ^−3.
Control was performed so as to correspond to an emission wavelength of 60 to 540 nm (2.695 to 2.295 eV). The band gap of ZnMgSSe as the cladding layer is 2.8 at room temperature.
It was about 8 eV. The growth conditions were appropriately adjusted so as not to lower the carrier concentration near the contact.

Next, an LED element was formed on the epi-wafer prepared above using the following process. LE
One D element had a shape of 150 × 910 μm, the size of the electrode pad was 100 × 860 μm, and a 60 × 175 μm window as shown in FIG. 1 was formed. A plurality of LED elements were formed on one wafer in a state of being arranged in both the vertical and horizontal directions.

Formation of Electrode Pad The above-mentioned epiwafer was cleaned and pretreated with a coupling agent. Next, a resist was applied to the main surface of the epiwafer on the side where the LED elements were to be formed by a spin coater, and exposure and development were performed using a photomask corresponding to the size and shape of the electrode pad. Then, after development, Ti and Au were deposited to a film thickness of 10 nm and 200 nm, respectively, by a vapor deposition method, and lift-off was performed with acetone to form electrode pads.

Transparent Electrode Formation Next, the epiwafer on which the electrode pads were formed was washed and pretreated with a coupling agent. Then, a resist was applied to the main surface of the epiwafer on the side on which the LED elements were to be formed by a spin coater, and exposure and development were performed using a photomask corresponding to the size and shape of the transparent electrode. Then, after development, a film of Au was formed to a film thickness of 10 nm by an evaporation method, and lift-off was performed with acetone to form a transparent electrode.

Element Separation Next, the epiwafer on which the transparent electrode was formed was washed and pretreated with a coupling agent or the like. Next, a resist was applied to the main surface of the epiwafer on the side on which the LED elements were to be formed by a spin coater, and exposure and development were performed using a photomask corresponding to the size and shape of the LED elements to be manufactured. Then, after the development, the elements were separated by etching in a mixed solution of phosphoric acid and hydrogen peroxide.

Formation of Insulating Film Next, the epiwafer subjected to element isolation was washed and pretreated with a coupling agent. Then, a resist was applied to the main surface of the epiwafer on the side on which the LED elements were to be formed by a spin coater, and exposure and development were performed using a photomask corresponding to the size and shape of the transparent electrode to be formed. After the development, a 200-nm-thick SiO ₂ film was formed by a sputtering method, and lift-off was performed with acetone to form an insulating film.

Backside Polishing Next, a photoresist was applied as a protective film to the surface of the wafer on which the insulating film was formed, on which the electrode pads and the like were formed, by a spin coater. Then, the back surface of the epiwafer, that is, the main surface on the side opposite to the side on which the electrode pads and the like were formed, was polished using a polishing machine or the like until the thickness of the LED elements became about 100 μm.

Next, an oxide film formed on the back surface of the polished epiwafer, ie, the main surface on the polished side, was removed by wet etching or the like. Then, the photoresist formed as a protective film on the surface of the epiwafer, ie, the surface on which the electrode pads and the like are formed, is removed by acetone or the like, and Pd, AuGe is applied to the back surface of the epiwafer, ie, the main surface on which wet etching is performed. The alloy, Ti, and Au were formed in this order to have a film thickness of 10 nm, 150 nm, 50 nm, and 400 nm, respectively, by an evaporation method. Further, hydrogen is added for alloying.
% Of an inert gas atmosphere at a temperature of 180 ° C. for 5 minutes to form an n-electrode.

Cleavage Next, on the epi-wafer on which the n-electrode is formed, a scribe line is made using a scribe device every other LED element in the longitudinal direction of the LED element. For example, in the width direction of the LED element, Cleavage was performed by inserting a scribe line at every ten LED elements to produce an LED rod-shaped substrate as shown in FIG.

Preparation of Small Unit A small unit substrate of 1 cm long × 1 cm wide as shown in FIG. 7 was prepared, and the LED rod-shaped substrate prepared above was mounted in a guide groove of the substrate using a conductive adhesive film. At the bottom of the guide groove, an n-electrode terminal is formed as shown in FIG.
A through hole was formed at the end of the n-electrode terminal. Then, from the through hole, the back surface of the small unit substrate, ie, the LED
The structure is such that conduction is made to the n-electrode terminal on the main surface opposite to the side on which the bar-shaped substrate is mounted, so that the back surface of the small unit substrate can be connected to the driver chip via the middle unit. Also, a wide partition wall and a p-electrode terminal were formed every three LED rod-shaped substrates, and a through-hole was formed in each electrode terminal. The conduction from the through hole to the back surface of the small unit substrate, that is, the p-electrode terminal formed on the main surface opposite to the side on which the LED rod-shaped substrate is mounted, from the back surface of the small unit to the drive circuit via the middle unit. The structure allows connection.

Mounting and Wiring of Small Unit Using a conductive adhesive film, an LED is mounted on the small unit substrate.
The wiring of the n-electrode was completed by mounting the rod-shaped substrate.

As shown in FIG. 19, wiring of the p-electrode was performed by wire bonding between p-electrode terminals formed on adjacent wide partition walls. And FIG.
As shown in (2), the wire is pressed against the p-electrode terminal using a probe on the p-electrode terminal on the LED element in between, and the wire and the LE are heated, weighted and applied with ultrasonic waves.
It was connected to the p electrode terminal on the D element.

Formation of Protective Film In the above description, the small unit on which the LED elements are mounted and the electrodes are wired is referred to as a small unit having a structure that covers the main surface other than the main surface of the small unit on which the LED rod-shaped substrate is mounted. It was inserted into an acrylic mold of the same shape, and an epoxy resin was applied only to the surface on the side where the small-unit LED rod-shaped substrate was mounted. After the epoxy resin was cured, the acrylic mold was peeled off to form a protective film.

Production of Middle Unit The small unit having the protective film formed thereon was mounted on the middle unit substrate by reflow. Place the cream solder on the pattern of the middle unit board, mount the small unit on the middle unit board with flip chip bonder,
The small unit was mounted on the medium unit substrate by performing a heat treatment at the temperature described above. An electrode pattern for attaching a connector is formed on the back surface of the middle unit substrate, that is, on the main surface opposite to the side on which the small unit is mounted, and is connected to a drive circuit from here.

Mounting of the Middle Unit The middle unit produced above was bonded to a large unit substrate to produce a large screen LED display.

When the large-screen LED display device manufactured as described above was used to display image information by current driving, an image with high luminance and high color quality could be obtained.

The obtained LED display device is as follows.
The LED element 10 was added to the substrate used for crystal growth of the LED element.
The LEDs are arranged in the longitudinal direction of the LED element to form an LED rod-shaped substrate. A small unit is formed by arranging the LED rod-shaped substrates. By this, LED
There is no need to arrange the elements one by one, and mounting of the LED elements can be performed efficiently and easily. Also, the wiring of the electrodes may be performed for each LED rod-shaped substrate.
Since it is not necessary to wire the ED elements one by one, the wiring of the electrodes can be performed efficiently and easily, and the reliability of the wiring has been improved. The electrode wiring is integrated on the back surface of each substrate using through holes, and the structure is such that only the minimum electrode wiring exists on the surface of the display screen, so the boundaries between each unit are conspicuous. As a result, a display device capable of displaying a high-quality image with good visibility and good visibility was obtained without causing any trouble such as inability to display image information.

Example 2 The LED bar-shaped substrate cut out by cleavage in Example 1 was coated with a positive photoresist using a spin coater, and was exposed using a direct optical drawing apparatus as shown in FIG.

The light source has a K wavelength of 413 nm.
An r laser was used. The scanning of the laser beam is performed in the X direction, that is, the scanning in the width direction of the LED rod-shaped substrate is performed by a galvanometer mirror, and the scanning in the Y direction, that is, the scanning in the longitudinal direction of the LED rod-shaped substrate is performed by moving the XY stage on which the LED rod-shaped substrate is mounted. It was done by letting it. The optical system of the optical direct writing apparatus was adjusted so that the power of the laser beam on the LED rod-shaped substrate was about 0.1 mW and the diameter of the laser beam was about 1 μm. Under the above conditions, 10 LED elements formed on the LED rod-shaped substrate were exposed.

After the exposure is completed, development is performed, and a silver paste is applied under the condition that the pn junction on the side surface of the LED element is short-circuited when the exposed electrode has no photoresist as an insulating film, and heat treatment is performed at 180 ° C. Cured.

The back surface of the LED rod-shaped substrate manufactured as described above, that is, the main surface opposite to the side on which the LED element is formed,
When a voltage of 4 V was applied between the electrode and the silver paste to flow a current, favorable green light emission was obtained from the LED element. Thereby, after cleavage of the LED rod-shaped substrate,
By coating a photoresist on the surface of the LED element and exposing the electrode by exposing with a laser beam, the side of the LED element can be protected, so that it can be said that short circuit of the pn junction on the side of the LED element can be prevented. .

Example 3 First, the epiwafer prepared in Example 1 was prepared.

Next, when forming an n-electrode from each epi-wafer, the back surface of the epi-wafer, that is, the main surface on the side subjected to wet etching, is made of Pd, AuGe alloy, Ti,
Au was deposited in this order to a thickness of 10 nm, 200 nm, 5 nm, respectively.
An LED element was formed according to the process described in Example 1, except that the film was formed to a thickness of 0 nm or 200 nm by an evaporation method. The shape of one LED element is 150 × 91
The size of the electrode pad was 100 × 860 μm, and a window of 60 × 175 μm as shown in FIG. 1 was formed. A plurality of LED elements were formed on one wafer in a state of being arranged in both the vertical and horizontal directions. The LED element is
LE showing green light emission similar to that of Example 1 for each epiwafer
D element, an LED element that emits blue light using ZnCdSe as an active layer, and an LED element that emits red light using AlGaInp as an active layer, which are similarly manufactured, are manufactured. Then, three kinds of wafers for red light emission were manufactured.

Next, cleaving was performed on each wafer in the same manner as in Example 1, and a width of 200 μm and a length of 10 m
An LED rod-shaped substrate having a thickness of 100 μm and a thickness of 100 μm was prepared.

Next, as shown in FIG. 22, a red LED rod-shaped substrate 42, a green LED rod-shaped substrate 43, and a blue LED rod-shaped substrate 44 are placed on a small unit substrate in the width direction of the LED rod-shaped substrate. LED for green using 45
Ten rod-shaped substrates, blue LED rod-shaped substrates, and red LED rod-shaped substrates were mounted in this order, ten each.

Next, a photoresist to be an insulating film is applied to the small unit substrate by a spin coater, and the surface of the electrode pad is directly irradiated with a laser beam using the optical direct drawing apparatus shown in FIG. Drawing and exposure were performed.
After completion of the exposure, development was performed to form an insulating film.

Next, on the small unit substrate on which the insulating film was formed, p-electrode wiring was formed between the p-electrodes on the small units adjacent in the width direction of the LED rod-shaped substrate by screen printing using a striped metal mask. Was wired to produce a small unit.

Next, a simple matrix RGB display device capable of full-color display was manufactured by bonding nine small units in a matrix of three vertically and three horizontally.

The simple matrix RGB obtained as described above
When image information was displayed on the display device by current driving, an image with high luminance and high color quality could be obtained.

Since the grooves between the LED rod-shaped substrates are filled with the insulating film on the small unit substrate, an insulating effect can be obtained up to the side surfaces of the LED rod-shaped substrates.
The pn junction of the element was prevented from being short-circuited, and a high-quality image was obtained.

Further, since the groove between the LED bar-shaped substrates is filled with an insulating film on the small unit substrate, it is possible to perform wiring by screen printing when wiring the p-electrode, thereby improving production efficiency. Was completed.

In addition, since exposure was performed by direct writing with a light beam using an optical direct writing apparatus, exposure could be performed with good accuracy and good production yield could be improved.

[0125]

As described in detail above, the display device according to the present invention is based on a rod-shaped substrate in which a plurality of light emitting diode elements are linearly arranged and formed as a basic unit, and the rod-shaped substrate is provided in a plurality in the width direction. By arranging, the light emitting diode elements are arranged in a matrix.

Therefore, the display device according to the present invention is excellent in production efficiency because the number of steps for mounting the light emitting diode element and the number of wirings of the electrodes are greatly reduced, and the display device is capable of displaying a high-quality image with good visibility. It becomes a high quality display device.

Further, in the method of manufacturing a display device according to the present invention, a light emitting diode is formed by preparing a rod-shaped substrate in which a plurality of light emitting diode elements are linearly arranged and arranging a plurality of the rod shaped substrates in the width direction. The elements are arranged in a matrix.

Therefore, according to the method of manufacturing a display device according to the present invention, the number of steps for mounting the light emitting diode element and the number of wirings for the electrodes can be greatly reduced, so that the display device can be manufactured simply and efficiently. And a display device capable of displaying high-quality images with good visibility can be manufactured.

[Brief description of the drawings]

FIG. 1 is a partial longitudinal sectional view showing a structure of an LED display device to which the present invention is applied.

FIG. 2 is a longitudinal sectional view showing a configuration of a middle unit.

FIG. 3 is a diagram illustrating an example of a pattern formed by cream solder printed on a main surface on a side where a middle unit of a second substrate is mounted;

FIG. 4 is a diagram showing an example of a pattern formed by cream solder printed on a main surface of the second substrate opposite to the side on which the middle unit is mounted.

FIG. 5 is a plan view of an LED rod-shaped substrate.

FIG. 6 is a perspective view of an LED rod-shaped substrate.

FIG. 7 is a plan view of a small unit.

FIG. 8 is a partially enlarged view of a small unit.

FIG. 9 is a sectional view of a main part of the small unit.

FIG. 10 is a perspective view of a main part of the small unit.

FIG. 11 is a sectional view of a main part of the small unit.

FIG. 12 is a plan view of a main part of a first modification of the small unit.

FIG. 13 is a sectional view of a main part of a first modification of the small unit.

FIG. 14 is a plan view of a main part of a second modification of the small unit.

FIG. 15 is a sectional view of a main part of a second modification of the small unit.

FIG. 16 is a sectional view of a main part of a second modification of the small unit.

FIG. 17 is a plan view of a main part of a third modification of the small unit.

FIG. 18 is a sectional view of a main part of a third modification of the small unit.

FIG. 19 is a diagram showing a state in which p-electrode terminals on a wide partition are connected to each other by wires.

FIG. 20 is a diagram showing a state in which a p-electrode terminal on a wide partition and a p-electrode terminal on an LED element are connected by a wire.

FIG. 21 is a schematic configuration diagram showing a configuration of an optical direct drawing apparatus.

FIG. 22 is a diagram showing a state where p-electrode terminals formed in a small unit are connected by a screen printing method using a metal mask.

[Explanation of symbols]

1 First substrate, 2 Medium unit, 3 Small unit, 4
Positioning pin post, 5 partition, 6 fixing bolt, 7
Fixing bolt hole, 8 nut, 9 outer peripheral wall, 10 second
Board, 11 driver chip, 12 support case, 1
3 through hole, 16 LED rod-shaped substrate, 17 third
Substrate, 18 substrate used for crystal growth, 19 LED element, 20 guide groove, 21 n electrode terminal, 25 wide partition, 26 narrow partition, 27 p electrode terminal, 28
Wire, 29 transparent substrate, 30p electrode wiring, 31 opaque substrate, 32 light extraction window, 33 optical lens, 34
Bar-shaped wiring, 35 fixture

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 33/00 H01L 33/00 M G09F 9/00 338 G09F 9/00 338 9/33 9/33 Z 9 / 40 301 9/40 301 (72) Inventor Katsuya Shirai 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (72) Inventor Atsushi Toda 6-35, Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation (72) Inventor Shigeru Kojima 6-35 Kita Shinagawa, Shinagawa-ku, Tokyo Sony Corporation F-term (reference) 5C094 AA43 AA44 BA12 BA24 CA19 DA01 DA04 DA14 DA15 DB01 DB04 DB05 DB07 EA04 EA07 ED01 ED13 FB12 FB15 5F041 AA42 CA34 CA35 CA41 CA43 CA44 CA88 CA98 CB22 CB28 DA82 DA83 DC03 DC10 EE11 EE25 FF01 5G435 AA17 BB04 CC09 EE33 GG02 KK05

Claims (22)

[Claims] 1. A light-emitting diode element is arranged in a matrix by using a rod-shaped substrate in which a plurality of light-emitting diode elements are linearly arranged and formed as a basic unit, and a plurality of the rod-shaped substrates are arranged in the width direction. A display device, comprising: 2. The display device according to claim 1, wherein said rod-shaped substrate is a substrate for growing a crystal of a light emitting diode element. 3. The display device according to claim 1, wherein the rod-shaped substrates are positioned and arranged on a support substrate on which a guide groove corresponding to the shape of the rod-shaped substrate is formed. 4. A common electrode of the plurality of light emitting diode elements is provided on a back surface of each of the bar-shaped substrates, and is provided at a bottom of a guide groove of the support substrate by being mounted on the support substrate. The display device according to claim 3, wherein the display device is electrically connected to the electrode. 5. The display device according to claim 4, wherein the electrode provided at the bottom of the guide groove of the support substrate is led out to the back surface side of the support substrate and connected to a drive circuit. 6. The electrode provided at the bottom of the guide groove,
The display device according to claim 5, wherein the display device is led to the back surface of the support substrate by a through hole. 7. The depth of the guide groove is smaller than the total size of the thickness of the rod-shaped substrate and the thickness of an adhesive layer for bonding the rod-shaped substrate to the guide groove, and is smaller than the thickness of the adhesive layer. The display device according to claim 3, wherein the display device is large. 8. The method according to claim 1, wherein the supporting substrate is one driving unit.
4. The display device according to claim 3, further comprising an independent drive circuit for one or a plurality of drive units. 9. An electrode is formed on a convex portion of the support substrate formed around the guide groove, and is connected to an individual electrode of a light emitting diode element formed on the rod-shaped substrate. Item 3. The display device according to Item 3. 10. An electrode formed on a convex portion of the support substrate and an individual electrode of a light-emitting diode element formed on the rod-shaped substrate are connected to a wiring board having electrode wirings provided on one main surface thereof. 10. The display device according to claim 9, wherein the wiring and the main surface of the rod-shaped substrate on which the light-emitting diode elements are arranged face each other and are arranged and connected on the rod-shaped substrate. 11. The display device according to claim 10, wherein the wiring board is capable of transmitting visible light. 12. The wiring board is impervious to visible light and has a light extraction window for extracting light emitted from the light emitting diode element at a predetermined portion overlapping the light emitting diode element. 2. The method according to claim 1, wherein
0. The display device according to 0. 13. The display device according to claim 12, wherein an optical lens for diffusing light emitted from the light emitting diode element is disposed in the light extraction window. 14. The display device according to claim 12, wherein a diffusion plate for diffusing light emitted from the light emitting diode element is disposed in the light extraction window. 15. The display device according to claim 9, wherein the electrode formed on the convex portion of the support substrate is led out to the back side of the guide groove of the support substrate, and is connected to a drive circuit. 16. The display device according to claim 15, wherein the electrode formed on the convex portion of the support substrate is led out to the back surface of the support substrate by a through hole. 17. An electrode formed on a convex portion of the supporting substrate and an individual electrode of a light emitting diode element formed on the rod-shaped substrate are formed by connecting a rod-shaped wiring to a main electrode on the side of the rod-shaped substrate on which the light emitting diode elements are arranged. The display device according to claim 9, wherein the display device is arranged and connected on the rod-shaped substrate so as to face the surface. 18. The display device according to claim 17, wherein the bar-shaped wiring has a fixing member made of an elastic body at both ends, and is fixed to the support substrate by an elastic force of the fixing member. 19. A rod-shaped substrate in which a plurality of light-emitting diode elements are linearly arranged and formed, and a plurality of the rod-shaped substrates are arranged in the width direction thereof.
A method for manufacturing a display device, comprising arranging the light emitting diode elements in a matrix. 20. A photoresist is applied on a light emitting diode element formed on the rod-shaped substrate, and the photoresist applied to an individual electrode portion of the light emitting diode element or a portion other than the individual electrode portion is exposed and exposed. 20. The method of manufacturing a display device according to claim 19, wherein an insulating film is formed by developing and exposing the individual electrode portion. 21. The method of manufacturing a display device according to claim 20, wherein the photoresist is exposed directly by drawing by irradiating a light beam. 22. The method according to claim 20, wherein the insulating film is formed so as to fill a gap between the adjacent rod-shaped substrates.