JP2001284601A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2001284601A5 JP2001284601A5 JP2001019287A JP2001019287A JP2001284601A5 JP 2001284601 A5 JP2001284601 A5 JP 2001284601A5 JP 2001019287 A JP2001019287 A JP 2001019287A JP 2001019287 A JP2001019287 A JP 2001019287A JP 2001284601 A5 JP2001284601 A5 JP 2001284601A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001019287A JP4836333B2 (ja) | 2000-01-28 | 2001-01-26 | 半導体装置 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000020913 | 2000-01-28 | ||
| JP2000-20913 | 2000-01-28 | ||
| JP2000020913 | 2000-01-28 | ||
| JP2001019287A JP4836333B2 (ja) | 2000-01-28 | 2001-01-26 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001284601A JP2001284601A (ja) | 2001-10-12 |
| JP2001284601A5 true JP2001284601A5 (es) | 2008-06-19 |
| JP4836333B2 JP4836333B2 (ja) | 2011-12-14 |
Family
ID=26584423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001019287A Expired - Fee Related JP4836333B2 (ja) | 2000-01-28 | 2001-01-26 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4836333B2 (es) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200302511A (en) | 2002-01-28 | 2003-08-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| TWI261358B (en) | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| JP4312466B2 (ja) * | 2002-01-28 | 2009-08-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7749818B2 (en) | 2002-01-28 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP4421202B2 (ja) * | 2002-03-26 | 2010-02-24 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| US6906343B2 (en) | 2002-03-26 | 2005-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| JP4503246B2 (ja) * | 2002-06-25 | 2010-07-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2004055771A (ja) * | 2002-07-18 | 2004-02-19 | Nec Lcd Technologies Ltd | 半導体薄膜の製造方法及びレーザ照射装置 |
| KR101100959B1 (ko) * | 2010-03-10 | 2011-12-29 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 표시 장치 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03196567A (ja) * | 1989-08-30 | 1991-08-28 | Ricoh Co Ltd | 半導体基板とその製造方法 |
| JP3321890B2 (ja) * | 1992-06-23 | 2002-09-09 | ソニー株式会社 | 半導体結晶の形成方法及び半導体素子 |
| JPH1098194A (ja) * | 1996-09-19 | 1998-04-14 | Sony Corp | 薄膜半導体装置の製造方法 |
| JP3389022B2 (ja) * | 1996-09-27 | 2003-03-24 | シャープ株式会社 | 半導体装置 |
-
2001
- 2001-01-26 JP JP2001019287A patent/JP4836333B2/ja not_active Expired - Fee Related