JP2001284436A - Substrate heating apparatus - Google Patents

Substrate heating apparatus

Info

Publication number
JP2001284436A
JP2001284436A JP2000091600A JP2000091600A JP2001284436A JP 2001284436 A JP2001284436 A JP 2001284436A JP 2000091600 A JP2000091600 A JP 2000091600A JP 2000091600 A JP2000091600 A JP 2000091600A JP 2001284436 A JP2001284436 A JP 2001284436A
Authority
JP
Japan
Prior art keywords
substrate
arm
heating
chamber
height
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000091600A
Other languages
Japanese (ja)
Inventor
Yoshikazu Konno
義和 金野
Tomohiko Takeda
智彦 竹田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Kokusai Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2000091600A priority Critical patent/JP2001284436A/en
Publication of JP2001284436A publication Critical patent/JP2001284436A/en
Pending legal-status Critical Current

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  • Control Of Resistance Heating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent a possibility of the interference between an arm of a conveying robot and a substrate by checking the influence due to the thermal expansion in a heating chamber. SOLUTION: In a substrate preheating room H for placing the substrate 2 on a substrate reception part in the heating chamber 5 and heating it, the position in the height direction of the substrate 2 placed on the substrate reception part is detected by a light sensor 10 installed outside a light transmitting window 11 and a modification of the position of the substrate 2 using the detected result allows less interference with the arm of the robot.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、主として半導体製
造装置において基板(ウェーハやガラス基板)の予備加
熱に用いられる基板加熱装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate heating apparatus mainly used for preheating a substrate (wafer or glass substrate) in a semiconductor manufacturing apparatus.

【0002】[0002]

【従来の技術】図3は半導体製造装置における各室のレ
イアウトを示す平面図である。図において、Tは搬送室
であり、搬送室Tを囲むように、外部との間で基板のや
りとりを行う基板予備室L1、L2、基板を予備加熱す
る基板予備加熱室H、基板に対して成膜処理を施す基板
成膜室R1、R2、R3が設けられている。搬送室T内
には搬送ロボット12が備えられ、この搬送ロボット1
2がアーム1を動かすことにより、各室間での基板の搬
送を行うようになっている。
2. Description of the Related Art FIG. 3 is a plan view showing a layout of each room in a semiconductor manufacturing apparatus. In the figure, T is a transfer chamber, and the substrate pre-chambers L1 and L2 for exchanging the substrate with the outside so as to surround the transfer chamber T, the substrate pre-heating chamber H for pre-heating the substrate, Substrate film forming chambers R1, R2, and R3 for performing a film forming process are provided. A transfer robot 12 is provided in the transfer chamber T.
When the arm 2 moves the arm 1, the substrate 2 is transferred between the chambers.

【0003】基板処理の一連の流れとしては、まず、基
板予備室L1、L2に入ってきた基板を搬送室T内の搬
送ロボット12により基板予備加熱室Hに入れ、ヒータ
加熱源により200〜400℃の温度まで予備加熱す
る。基板予備加熱室Hは、装置の歩留まり向上のため、
通常は基板を1〜6枚収納できる。
[0003] As a series of flow of substrate processing, first, a substrate which has entered the substrate preparatory chambers L1 and L2 is put into the substrate preheating chamber H by the transfer robot 12 in the transfer chamber T, and 200-400 by the heater heating source. Preheat to a temperature of ° C. The substrate preheating chamber H is provided for improving the yield of the apparatus.
Usually, 1 to 6 substrates can be stored.

【0004】基板予備加熱室Hにおいて基板が一定温度
に加熱されたら、再び搬送室T内の搬送ロボット12を
動かして、基板予備加熱室H内の基板を基板成膜室R
1、R2、R3に入れる。そして、基板成膜室R1、R
2、R3にて基板上に所定の成膜処理を施した後、搬送
ロボット12により基板準備室L1、L2に入れて、基
板準備室L1、L2から外部に取り出す。
When the substrate is heated to a predetermined temperature in the substrate preheating chamber H, the transfer robot 12 in the transfer chamber T is moved again to move the substrate in the substrate preheating chamber H to the substrate deposition chamber R.
1, Put in R2, R3. Then, the substrate film forming chambers R1, R
After performing a predetermined film forming process on the substrate in R2 and R3, the transfer robot 12 puts the film into the substrate preparation chambers L1 and L2 and takes it out of the substrate preparation chambers L1 and L2.

【0005】図4及び図5は基板予備加熱室Hの各例の
概略構成を示す側面図である。図4の例では、基板予備
加熱室Hを構成する加熱チャンバ5内の下部に保持軸1
3Aを配置し、この保持軸13Aの上端にて、基板2を
収容した基板保持部4を支持している。また、図5の例
では、加熱チャンバ5内の天井部に保持軸13Bを配置
し、この保持軸13Aの下端にて、基板2を収容した基
板保持部4を吊り下げ支持している。基板保持部4内に
は、所定枚数の基板2を高さ方向に等間隔に載せるため
の基板受部(図示略)が設けられており、各基板受部に
基板2が水平に載せられている。
FIGS. 4 and 5 are side views showing a schematic configuration of each example of the substrate preheating chamber H. FIG. In the example of FIG. 4, the holding shaft 1 is provided at a lower portion in a heating chamber 5 constituting the substrate preheating chamber H.
3A is arranged, and the substrate holding portion 4 that accommodates the substrate 2 is supported at the upper end of the holding shaft 13A. Further, in the example of FIG. 5, a holding shaft 13B is arranged at the ceiling in the heating chamber 5, and the lower end of the holding shaft 13A suspends and supports the substrate holding unit 4 containing the substrate 2. A substrate receiving portion (not shown) for mounting a predetermined number of substrates 2 at equal intervals in the height direction is provided in the substrate holding portion 4, and the substrate 2 is placed horizontally on each substrate receiving portion. I have.

【0006】図6はある段の基板受部20と基板2とロ
ボットアーム1の関係を正面から見た図である。基板受
部20には、搬送ロボットのアーム1を挿入して、基板
2をアーム1と基板受部20との間で受け渡すための開
口部21が設けられており、基板受部20の下側の一定
の高さの位置(搬送レベル)に搬送ロボットのアーム1
を挿入して、アーム1を基板受部20に対し相対的に持
ち上げることにより、開口部21を通して、アーム1と
基板受部20との間で基板2を受け渡すことができるよ
うになっている。
FIG. 6 is a front view showing the relationship between the substrate receiving portion 20, the substrate 2, and the robot arm 1 in a certain stage. The substrate receiving portion 20 is provided with an opening 21 for inserting the arm 1 of the transfer robot and transferring the substrate 2 between the arm 1 and the substrate receiving portion 20. Arm 1 of the transfer robot at a certain height (transport level) on the side
Is inserted and the arm 1 is lifted relatively to the substrate receiving portion 20, so that the substrate 2 can be transferred between the arm 1 and the substrate receiving portion 20 through the opening 21. .

【0007】[0007]

【発明が解決しようとする課題】ところで、常温時にお
けるアーム1の挿入レベル(搬送レベル)と基板2及び
基板受部20との位置関係は、図6に示すように、当
然、基板2の下面とアーム1の上面との間に、お互いに
干渉しない程度の所定の間隔を確保した状態になってい
るが、装置の運用時には、基板予備加熱室H内の温度は
ヒータ加熱源の熱により200〜400℃になるため、
例えば、基板保持部4や基板受部20が熱の影響で下方
に変位したり、基板2が下方に歪んだりして、最悪の場
合は、図7に示すように、基板2の下面と搬送ロボット
のアーム1の上面が接触する可能性が出てくる。このよ
うな状態になると、基板予備加熱室Hから基板2の取り
出しが正常に行われなくなるため、搬送トラブルとし
て、半導体製造装置全体が停止しまう事態になる。
The positional relationship between the insertion level (transport level) of the arm 1 and the substrate 2 and the substrate receiving portion 20 at normal temperature, as shown in FIG. While a predetermined distance is maintained between the arm and the upper surface of the arm 1 so as not to interfere with each other, during operation of the apparatus, the temperature in the substrate preheating chamber H is increased by 200 mm due to the heat of the heater heating source. ~ 400 ° C
For example, the substrate holding part 4 and the substrate receiving part 20 are displaced downward due to the influence of heat, and the substrate 2 is distorted downward. In the worst case, as shown in FIG. There is a possibility that the upper surface of the arm 1 of the robot contacts. In such a state, the substrate 2 is not normally taken out of the substrate preheating chamber H, so that the entire semiconductor manufacturing apparatus stops as a transport trouble.

【0008】特に最近では、基板2が大型化し、基板2
自体が重くなる傾向にある上、それに伴って基板保持部
4も大型化して重量が大幅に重くなる可能性があるた
め、上記の問題が顕著化する懸念があった。
Particularly recently, the size of the substrate 2 has increased,
Since the substrate itself tends to be heavier, and the substrate holding part 4 may be accordingly larger in size and heavier in weight, there is a concern that the above-mentioned problem may become remarkable.

【0009】本発明は、上記事情を考慮し、加熱チャン
バ内の熱膨脹の影響をチェックすることにより、搬送ロ
ボットのアームと基板との干渉のおそれをなくして、確
実な基板の搬入出を可能にする基板加熱装置を提供する
ことを目的とする。
According to the present invention, by taking into account the above circumstances, by checking the influence of thermal expansion in the heating chamber, the possibility of interference between the arm of the transfer robot and the substrate can be eliminated, and the substrate can be reliably loaded and unloaded. It is an object of the present invention to provide a substrate heating device that performs the following.

【0010】[0010]

【課題を解決するための手段】請求項1の発明は、加熱
チャンバ内の基板受部に基板を載せて加熱する基板加熱
装置において、前記基板受部に載せた基板の高さ方向の
位置を検出するセンサを設けたことを特徴とする。
According to a first aspect of the present invention, there is provided a substrate heating apparatus for heating a substrate placed on a substrate receiving portion in a heating chamber, wherein the position of the substrate placed on the substrate receiving portion in the height direction is determined. A sensor for detection is provided.

【0011】この基板加熱装置では、基板の高さ方向の
位置をセンサでチェックすることができるので、基板の
高さの検出結果に応じて、基板の高さ位置あるいは搬送
ロボットのアームの高さ位置を最適な搬送レベルに修正
することができる。
In this substrate heating apparatus, the position of the substrate in the height direction can be checked by a sensor. Therefore, according to the detection result of the substrate height, the height of the substrate or the height of the arm of the transfer robot is determined. The position can be corrected to the optimum transport level.

【0012】[0012]

【発明の実施の形態】以下、本発明の実施形態を図面に
基づいて説明する。図1は本発明の基板予備加熱室(基
板加熱装置)Hの要部概略構成図で、(a)は側面図、
(b)は図(a)のIa矢視図である。また、図2は基
板予備加熱室Hの全体構成を示す側面図である。この基
板予備加熱室Hの加熱チャンバ5の内部には、加熱チャ
ンバ5の天井部から、保持軸13Bによって基板保持部
4が吊り下げ支持されている。基板保持部4の内部に
は、上下方向に所定間隔をおいて基板2を載置できるよ
うに基板受部(図示略)が設けられており、各基板受部
の上面に基板2が載置されている。前記基板保持部4に
は、センサ10で各基板受部に載置された基板2を検知
できる様、枠に開口部が設けられている。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram of a main part of a substrate preheating chamber (substrate heating device) H of the present invention, in which (a) is a side view,
(B) is a view on arrow Ia of FIG. (A). FIG. 2 is a side view showing the entire configuration of the substrate preheating chamber H. Inside the heating chamber 5 of the substrate preheating chamber H, the substrate holding unit 4 is suspended from the ceiling of the heating chamber 5 by a holding shaft 13B. Substrate receiving portions (not shown) are provided inside the substrate holding portion 4 so that the substrates 2 can be placed at predetermined intervals in the vertical direction, and the substrate 2 is placed on the upper surface of each substrate receiving portion. Have been. The substrate holding portion 4 has an opening in a frame so that the sensor 2 can detect the substrate 2 placed on each substrate receiving portion.

【0013】基板保持部4を吊り下げ支持している保持
軸13Bは、図2に示すように、加熱チャンバ5の上方
に延びており、フランジ15で加熱チャンバ5に上下方
向摺動自在に取り付けられている。この場合、フランジ
15は、保持軸13Bをガイドし、基板保持部4のブレ
を押さえる役目を果たす。
As shown in FIG. 2, a holding shaft 13B for suspending and supporting the substrate holding portion 4 extends above the heating chamber 5, and is attached to the heating chamber 5 by a flange 15 so as to be vertically slidable. Have been. In this case, the flange 15 guides the holding shaft 13 </ b> B and plays a role of suppressing the shake of the substrate holding unit 4.

【0014】そして、保持軸13Bは、加熱チャンバ5
外に設置したモータ6を駆動することにより、ギヤボッ
クス7、カップリング8、ボールネジ機構9を介して上
下にスライドさせられ、それにより、加熱チャンバ5内
の基板保持部4の高さHWを調節できるようになってい
る。ここでは、モータ6、ギヤボックス7、カップリン
グ8、ボールネジ機構9、保持軸13Bが、基板保持部
4の高さを調整する機構を構成している。
The holding shaft 13B is connected to the heating chamber 5
By driving the motor 6 installed outside, it is slid up and down via the gear box 7, the coupling 8, and the ball screw mechanism 9, thereby adjusting the height HW of the substrate holder 4 in the heating chamber 5. I can do it. Here, the motor 6, the gear box 7, the coupling 8, the ball screw mechanism 9, and the holding shaft 13B constitute a mechanism for adjusting the height of the substrate holding unit 4.

【0015】また、この基板予備加熱室Hでは、加熱チ
ャンバ5の側壁に透明ガラスを嵌めた光透過窓11が設
けられており、その外側に、基板保持部4内の基板2の
下面の高さ方向の位置を検出する光センサ10が設けら
れている。光センサ10は、搬送レベルにある基板2の
位置だけを検出すればよいので、高さ方向に1セットだ
け設けられている。この場合、基板2の撓みによる変位
も検出できるように、水平方向に並べた3つの光センサ
10が1セットとして設置されている。
Further, in the substrate preheating chamber H, a light transmitting window 11 in which transparent glass is fitted is provided on the side wall of the heating chamber 5, and the height of the lower surface of the substrate 2 in the substrate holding section 4 is provided outside the window. An optical sensor 10 for detecting the position in the vertical direction is provided. Since only the position of the substrate 2 at the transport level needs to be detected, only one set of the optical sensors 10 is provided in the height direction. In this case, three optical sensors 10 arranged in a horizontal direction are installed as one set so that displacement due to bending of the substrate 2 can be detected.

【0016】また、光センサ10の検出信号は図示しな
い制御装置に入力されており、その検出信号に応じて制
御装置がモータ6を駆動することにより、ボールネジ機
構9を介して基板保持部4の高さ位置が調節され、最終
的には、基板2の下面の高さが、搬送ロボット12のア
ーム1(図3、図6、図7参照)と干渉しない位置に自
動修正されるようになっている。
The detection signal of the optical sensor 10 is input to a control device (not shown), and the control device drives the motor 6 in accordance with the detection signal, so that the substrate holding portion 4 The height position is adjusted, and finally, the height of the lower surface of the substrate 2 is automatically corrected to a position that does not interfere with the arm 1 of the transfer robot 12 (see FIGS. 3, 6, and 7). ing.

【0017】次に作用を説明する。基板予備加熱室Hに
対して基板2の搬入出を行う場合には、モータ6を駆動
して、ボールネジ機構9により基板保持部4を上下させ
て、基板受部上の基板2の高さを搬送ロボットの搬送レ
ベルに対応するように調整するが、そのとき、基板の位
置を光センサ10で確認し、その検出結果に応じて基板
2の位置を自動的に微修正する。そうすることで、熱膨
脹の影響で基板保持部4や基板受部の位置が変位してい
ても、あるいは、基板2自体が熱の影響で歪んでいて
も、搬送ロボットのアームの高さに合った適正レベルに
基板2の高さを自動修正することができる。従って、搬
送ロボットのアームと基板2との干渉を未然に回避する
ことができ、確実に基板2の搬入出を行うことができ
る。
Next, the operation will be described. When loading and unloading the substrate 2 into and out of the substrate preheating chamber H, the motor 6 is driven, the substrate holding unit 4 is moved up and down by the ball screw mechanism 9, and the height of the substrate 2 on the substrate receiving unit is increased. Adjustment is made so as to correspond to the transfer level of the transfer robot. At this time, the position of the substrate is checked by the optical sensor 10, and the position of the substrate 2 is automatically finely corrected according to the detection result. By doing so, even if the positions of the substrate holding unit 4 and the substrate receiving unit are displaced due to the thermal expansion, or the substrate 2 itself is distorted due to the heat, the height of the arm of the transfer robot can be adjusted. The height of the substrate 2 can be automatically corrected to the appropriate level. Therefore, interference between the arm of the transfer robot and the substrate 2 can be avoided beforehand, and the substrate 2 can be reliably loaded and unloaded.

【0018】また、この基板予備加熱室Hの場合は、加
熱チャンバ5の側壁に光透過窓11を設けて、その外側
に光センサ10を設置しているので、センサ10に耐熱
性を持たせなくてよく、安価に作製することができる。
In the case of the substrate preheating chamber H, since the light transmitting window 11 is provided on the side wall of the heating chamber 5 and the optical sensor 10 is provided outside the window, the sensor 10 has heat resistance. It is not necessary and can be manufactured at low cost.

【0019】なお、基板保持部4の高さを調節すること
で、熱の影響による基板2の変位を修正する場合を説明
したが、基板2の変位の検出結果に基づいて、搬送ロボ
ット側のアームの高さを修正するようにすることもでき
る。
Although the case where the displacement of the substrate 2 due to the influence of heat is corrected by adjusting the height of the substrate holding portion 4 has been described, the transfer robot side based on the detection result of the displacement of the substrate 2 is described. The height of the arm can be modified.

【0020】また、基板2の高さ位置を検出することが
できれば、光センサ10以外のセンサを使用することも
可能である。
If the height position of the substrate 2 can be detected, a sensor other than the optical sensor 10 can be used.

【0021】[0021]

【発明の効果】以上説明したように、本発明によれば、
加熱チャンバ内の基板の高さ方向の位置を個々にセンサ
で検出するようにしたため、加熱による基板の位置の変
位や基板自身の反りに影響されずに、常に搬送ロボット
のアームに対して最適な搬送レベルに基板の高さ位置を
相対的に修正することができる。このため、基板の搬送
時に起きていた搬送ロボットによる基板の受け取りミス
や、基板の破損等のトラブルを未然に防ぐことができ、
装置全体の歩留まりの向上が図れる。
As described above, according to the present invention,
Since the position of the substrate in the heating chamber in the height direction is individually detected by the sensor, it is always optimal for the arm of the transfer robot without being affected by the displacement of the substrate position due to heating or the warpage of the substrate itself. The height position of the substrate can be corrected relative to the transfer level. For this reason, it is possible to prevent troubles such as a mistake in receiving the substrate by the transfer robot that occurred during the transfer of the substrate and damage to the substrate, etc.
The yield of the entire device can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施形態の基板予備加熱室(基板加熱
装置)Hの要部概略構成図で、(a)は側面図、(b)
は図(a)のIa矢視図である。
FIG. 1 is a schematic diagram of a main part of a substrate preheating chamber (substrate heating device) H according to an embodiment of the present invention, wherein FIG.
FIG. 2 is a view as seen from the arrow Ia in FIG.

【図2】同基板予備加熱室Hの全体構成を示す側面図で
ある。
FIG. 2 is a side view showing the overall configuration of the substrate preheating chamber H.

【図3】半導体製造装置における各室のレイアウトの一
例を示す平面図である。
FIG. 3 is a plan view showing an example of a layout of each chamber in the semiconductor manufacturing apparatus.

【図4】図3の基板予備加熱室Hの一例を示す概略側面
図である。
FIG. 4 is a schematic side view showing an example of a substrate preheating chamber H of FIG.

【図5】図3の基板予備加熱室Hの別の例を示す概略側
面図である。
FIG. 5 is a schematic side view showing another example of the substrate preheating chamber H of FIG.

【図6】常温時の基板予備加熱室Hにおける基板受部2
0と基板2と搬送ロボットのアーム1との関係を示す正
面図である。
FIG. 6 shows a substrate receiving portion 2 in the substrate preheating chamber H at normal temperature.
FIG. 4 is a front view showing a relationship between a reference numeral 0, a substrate 2, and an arm 1 of the transfer robot.

【図7】高温時の基板予備加熱室Hにおける基板受部2
0と基板2と搬送ロボットのアーム1との関係を示す正
面図である。
FIG. 7 shows a substrate receiving portion 2 in a substrate preheating chamber H at a high temperature.
FIG. 4 is a front view showing a relationship between a reference numeral 0, a substrate 2, and an arm 1 of the transfer robot.

【符号の説明】[Explanation of symbols]

1 搬送ロボットのアーム 2 基板 4 基板保持部 5 加熱チャンバ 10 光センサ 11 光透過窓 13B 保持軸 DESCRIPTION OF SYMBOLS 1 Transfer robot arm 2 Substrate 4 Substrate holding part 5 Heating chamber 10 Optical sensor 11 Light transmission window 13B Holding shaft

フロントページの続き Fターム(参考) 3K058 AA34 AA41 BA19 CA15 CA22 CA31 CA91 CF01 GA06 5F031 CA02 CA05 FA01 FA02 FA12 JA25 JA30 PA18 PA20 Continued on the front page F term (reference) 3K058 AA34 AA41 BA19 CA15 CA22 CA31 CA91 CF01 GA06 5F031 CA02 CA05 FA01 FA02 FA12 JA25 JA30 PA18 PA20

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 加熱チャンバ内の基板受部に基板を載せ
て加熱する基板加熱装置において、前記基板受部に載せ
た基板の高さ方向の位置を検出するセンサを設けたこと
を特徴とする基板加熱装置。
1. A substrate heating apparatus for heating a substrate placed on a substrate receiving portion in a heating chamber, wherein a sensor for detecting a height position of the substrate placed on the substrate receiving portion is provided. Substrate heating device.
JP2000091600A 2000-03-29 2000-03-29 Substrate heating apparatus Pending JP2001284436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000091600A JP2001284436A (en) 2000-03-29 2000-03-29 Substrate heating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000091600A JP2001284436A (en) 2000-03-29 2000-03-29 Substrate heating apparatus

Publications (1)

Publication Number Publication Date
JP2001284436A true JP2001284436A (en) 2001-10-12

Family

ID=18607047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000091600A Pending JP2001284436A (en) 2000-03-29 2000-03-29 Substrate heating apparatus

Country Status (1)

Country Link
JP (1) JP2001284436A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008084938A (en) * 2006-09-26 2008-04-10 Nec Electronics Corp Method for teaching various setting values to substrate processing apparatus, teachingapparatus, and calibration jig thereof
JP2014118250A (en) * 2012-12-14 2014-06-30 Tokyo Ohka Kogyo Co Ltd Transport arm, transport device, and transport method
JP2015527728A (en) * 2012-06-12 2015-09-17 エリッヒ・タールナー Apparatus and method for aligning substrates

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008084938A (en) * 2006-09-26 2008-04-10 Nec Electronics Corp Method for teaching various setting values to substrate processing apparatus, teachingapparatus, and calibration jig thereof
JP2015527728A (en) * 2012-06-12 2015-09-17 エリッヒ・タールナー Apparatus and method for aligning substrates
US10014202B2 (en) 2012-06-12 2018-07-03 Erich Thallner Device and method for aligning substrates
JP2014118250A (en) * 2012-12-14 2014-06-30 Tokyo Ohka Kogyo Co Ltd Transport arm, transport device, and transport method

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