JP2001284413A - Semiconductor device and substrate for semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device having a resin filled between a semiconductor element and a substrate, to which the resin can be surely applied by a conventional casting method as well with no development of a void, steady quality, and high yield, and to provide a substrate for the semiconductor device. SOLUTION: A device comprises a pattern member 20A provided in a mounting region 2a for mounting a semiconductor chip 4 of a base film 2. The pattern member 20A is formed inside a inner lead 8, and a region is formed between the circumference of the semiconductor chip 4 and the pattern member 20A to be filled with underfill material 10.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device and a substrate for a semiconductor device, and more particularly to a semiconductor device in which a resin adhesive is filled between a semiconductor element and a substrate by using a resin adhesive, and such a semiconductor device. The present invention relates to a semiconductor device substrate used for a semiconductor device.

2. Description of the Related Art In recent years, as electronic devices have become more sophisticated, the density of semiconductor devices has been increasing, and the electrode terminals of semiconductor devices have become finer and the pitch between terminals has become narrower.

The TAB (Tape Automated Bonding) technology is a very effective technology for increasing the number of electrodes and miniaturizing the electrodes, and is currently used in the manufacture of many semiconductor devices. In the TAB technology, the development of a so-called COF (Chip On Film) in which a semiconductor chip is mounted on a tape-like carrier film on which a wiring pattern is formed has been advanced.

A method of joining a semiconductor chip to a carrier film includes joining using an anisotropic conductive resin or a film (ACP: Anisotropic Conductive Paste; ACF: ACF).
(Nisotropic Conductive Film) and thermocompression bonding (NCP: Non Conductive Paste) using a thermosetting resin. These joining methods are widely used for manufacturing liquid crystal driver ICs and the like. However, these ACP, ACF, N
Bonding using CP is still used only in a limited field, and metal eutectic bonding such as solder bonding is used for high-end ICs and the like that require high reliability. Also,
Metal eutectic bonding is often used for flip chip mounting.

[0005]

2. Description of the Related Art FIG. 1 is a plan view of a base film (tape substrate) used in a semiconductor device having a COF structure based on a conventional TAB technique. FIG. 2 is an enlarged sectional view showing a state where a semiconductor chip is mounted on the tape substrate shown in FIG.

As shown in FIG. 1, the base film 2 includes a mounting area 2a on which the semiconductor chip 4 is mounted, and a mounting area 2a.
a, and a wiring region 2b on which the mounting electrode pad 6 is formed. In the vicinity of the boundary between the mounting area 2a and the wiring area 2b, a bump electrode (bump) 4 of the semiconductor chip 4 is provided.
An inner lead 8 is formed to electrically connect the a to the mounting electrode pad 6, and the protruding electrode 4a is joined to the inner lead 8 by metal eutectic bonding. In addition,
In FIG. 1, the wiring pattern provided between the inner lead 8 and the mounting electrode pad 6 is omitted. Further, as shown in FIG. 2, a resist 12
Is applied. An alignment mark 14 is provided outside the square of the mounting area 2a.

After the protruding electrode 4a of the semiconductor chip 4 is bonded to the inner lead 8 by metal eutectic bonding, as shown in FIG. 5, an underfill material (filled resin) is formed between the semiconductor chip 4 and the base film 2. 10 are filled. The underfill material 10 is provided to reinforce the bonding between the protruding electrodes 4 a of the semiconductor chip 4 and the inner leads 8 of the base film 2 and to bond and fix the semiconductor chip 4 to the base film 2. The underfill material 10 also has a function of relieving stress applied to the joint.

The underfill material 10 is a liquid resin before being cured, and after the protruding electrodes 4a of the semiconductor chip 4 are joined to the inner leads 8, the underfill material 10 is formed from the periphery of the semiconductor chip 4 and between the semiconductor chip 4 and the base film 2. It is poured in between. After a predetermined amount of the underfill material 10 is filled over the entire area between the semiconductor chip 4 and the base film 2, the underfill material 10 is cured by heating.

[0009]

As described above, in the method of filling the underfill material 10 by flowing it from the periphery of the semiconductor chip 4, the underfill material 10 is sufficiently filled if the filling amount and the method of filling are not appropriate. Therefore, voids may be generated in the underfill material 10. For this reason, it is necessary to control the viscosity and filling position of the liquid underfill material 10 with high accuracy, but it is difficult to control the pouring condition accurately. In particular, as the pitch of the inner leads 8 becomes narrower, the opening for pouring becomes narrower, and the liquid underfill material 10 may not be sufficiently filled and voids may be generated.

If a void is generated in the underfill material 10 near the joint between the protruding electrode 4a and the inner lead 8, the joint in the void may be damaged when the air in the void thermally expands. In addition, moisture easily accumulates in the voids, which may cause corrosion of the semiconductor chip 4, the inner leads 8, and the protruding electrodes 4a.

Accordingly, the present invention has been made in view of the above-mentioned problems. Even when the filling resin is supplied by the conventional pouring method, the filling resin can be reliably filled, and a stable quality without generation of voids can be obtained. It is an object of the present invention to provide a semiconductor device and a semiconductor device substrate having a high yield.

[0012]

Means for Solving the Problems In order to solve the above problems, the present invention is characterized by taking the following means.

[0013] The present invention relates to a semiconductor device, and relates to a semiconductor device, a substrate having a mounting area on which the semiconductor element is mounted, and a filling for fixing the semiconductor device to the mounting area. A resin and a pattern member formed on the substrate in the mounting region, and defining a predetermined region between the semiconductor device and the substrate, wherein the predetermined region defined by the pattern member is An opening penetrating the substrate is formed, and the filling resin is filled in a predetermined region defined by the pattern member.

According to a second aspect of the present invention, in the semiconductor device according to the first aspect, an inner lead for connecting an electrode of the semiconductor device and an electrode pad on the substrate is provided around the mounting area. Wherein the pattern member is made of the same material as the inner lead and has the same thickness.

According to a third aspect of the present invention, there is provided a substrate for a semiconductor device, wherein: a mounting area on which a semiconductor element is mounted; an external connection electrode provided outside the mounting area; And an inner lead for connecting an electrode of the semiconductor device and the external connection electrode, the inner lead being formed in the mounting area, and the semiconductor element being mounted on the mounting area when the semiconductor element is mounted on the mounting area. A pattern member defining a predetermined region between the element and the substrate, and a through-opening formed in the predetermined region defined by the pattern member.

According to a fourth aspect of the present invention, there is provided the semiconductor device substrate according to the third aspect, wherein the pattern member comprises:
It is characterized by having the same material and the same thickness as the external connection electrode and the inner lead.

Each of the above means operates as follows.

According to the first and third aspects of the present invention, only a predetermined area defined by the pattern member needs to be filled with the filling resin, so that the filling amount of the filling resin may be small. Further, since the area to be filled with the filling resin is reduced, the flow of the filling resin can be easily controlled, and the occurrence of voids due to inappropriate flow can be prevented.

Further, the filling resin can be reliably filled in the filling area without changing the conventional manufacturing process and parts.
The generation of harmful voids can be prevented. Therefore, even if the pitch of the electrodes on the substrate is reduced, the filling resin can be efficiently and sufficiently filled, and an inexpensive and highly reliable semiconductor device can be manufactured. Further, even a semiconductor element having a large area, which has conventionally been considered difficult to fill with a filling resin, can be efficiently and sufficiently filled with the filling resin.

Further, when filling the filling resin, air can be released through the through-opening, and efficient filling can be achieved. Further, the filling resin can be supplied from the back side of the substrate through the through-opening.

According to the second and fourth aspects of the present invention, the pattern member can be formed simultaneously in the step of forming the inner lead or the circuit pattern on the substrate, without increasing the number of parts and without adding a manufacturing step. The pattern member can be easily formed on the substrate.

[0022]

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 3 shows a first embodiment according to the embodiment of the present invention.
FIG. 4 is a plan view of a base film used for the semiconductor device of FIG.
It is sectional drawing which followed the IV line. FIG. 5 is an enlarged sectional view showing a part of the semiconductor device according to the first embodiment. 3, 4, and 5, parts that are the same as the parts shown in FIGS. 1 and 2 are given the same reference numerals.

The semiconductor device of the first embodiment has a COF structure based on TAB technology. The base film 2 has a mounting area 2a on which the semiconductor chip 4 is mounted as shown in FIG.
And a wiring region 2b outside the mounting region 2a and on which the mounting electrode pad 6 is formed. Near the boundary between the mounting area 2a and the wiring area 2b, an inner lead 8 is formed for electrically connecting the bump electrode (bump) 4a of the semiconductor chip 4 and the mounting electrode pad 6, and the bump electrode is formed. 4a is joined to the inner lead 8 by metal eutectic bonding. In FIG. 3, a wiring pattern provided between the inner lead 8 and the mounting electrode pad 6 is omitted. The base film 2 is supplied in the form of a tape, and has sprocket holes 2c on both sides. Further, as shown in FIG. 4, a resist 12 is applied to the wiring region 2b. Furthermore, a substantially square mounting area 2
An alignment mark 14 that is referred to when a semiconductor chip is mounted is provided outside a.

Here, a pattern member 20A is formed on the base film 2 of the semiconductor device of the first embodiment.
The pattern member 20A has a substantially rectangular band shape similar to the mounting area 2a, and is arranged inside the mounting area 2a. In the case of the present embodiment, the pattern member 20A is formed simultaneously with the inner lead 8 when forming the inner lead 8.

A wiring pattern (not shown) for connecting the inner lead 8, the mounting electrode pad 6, and the inner lead 8 formed on the base film 2 to the electrode pad 6 is made of a copper plate or copper foil on the base film 2. It is formed by attaching and partially removing by etching. Therefore, conventionally, the copper plate or copper foil corresponding to the portion inside the inner lead 8 in the mounting area 2a has been removed by etching.

In the first embodiment, the pattern member 20A is formed using a copper plate or a copper foil which has been conventionally removed. That is, the pattern member 20A is formed by simultaneously etching the copper plate or copper foil attached to the base film 2 to form the inner leads 8 and the wiring pattern in the step of etching the inner leads 8. I have. Therefore, the pattern member 2
0A is the same material as the inner lead, and has the same thickness.

In this embodiment, the pattern member 20A is formed using a copper plate or a copper foil for forming the inner leads 8, but another member is attached or formed on the base film 2. Alternatively, it may be formed. That is, the semiconductor chip 4 is used as the base film 2
By attaching a member having a thickness smaller than the distance between the semiconductor chip 4 and the base film 2 when mounted on the base film 2 or by forming the member on the base film 2, a pattern member 20A is formed. Is also good. At this time, the material of the pattern member 20A does not need to be copper, and any material can be used as long as it can be formed or pasted on the base film 2 and processed into a predetermined pattern. Further, a pattern member previously processed into a predetermined shape may be attached on the base film 2.

After the protruding electrode 4a of the semiconductor chip 4 is bonded to the inner lead 8 by metal eutectic bonding, as shown in FIG. 5, an underfill material (filled resin) is provided between the semiconductor chip 4 and the base film 2. 10 are filled. The underfill material 10 is provided to reinforce the bonding between the protruding electrodes 4 a of the semiconductor chip 4 and the inner leads 8 of the base film 2 and to bond and fix the semiconductor chip 4 to the base film 2. The underfill material 10 also has a function of relieving stress applied to the joint.

The underfill material 10 is a liquid resin before curing, and after the protruding electrodes 4 a of the semiconductor chip 4 are joined to the inner leads 8, the underfill material 10 is formed from the periphery of the semiconductor chip 4 and between the semiconductor chip 4 and the base film 2. It is poured in between. In the first embodiment, since the pattern member 20A is provided inside the inner lead 8, the liquid underfill material 10 poured from the periphery of the semiconductor chip 4 is prevented from flowing by the pattern member 20A. It will accumulate outside 20A.

The filling amount of the underfill material 10 is set in advance so as to sufficiently fill the outside of the pattern member 20A. Thus, the entire region from the periphery of the semiconductor chip 4 to the pattern member 20A can be reliably filled with the underfill material 10. A predetermined amount of the underfill material 10 is applied to the semiconductor chip 4 and the base film 2.
After that, the underfill material 10 is cured by heating to fix the semiconductor chip 4 to the base film and reinforce the joint between the protruding electrode 4 a and the inner lead 8.

In the conventional configuration in which the pattern member 20A is not provided, it is necessary to pour the liquid underfill material 10 to the center of the mounting area 2a, so that a large amount of the underfill material 10 is required and the flow is reduced. It needed to be properly controlled. However, in this embodiment, since the underfill material 10 only needs to be filled in the region defined by the pattern member 20A, the filling amount may be small.
Further, since the area to be filled with the underfill material 10 is reduced, the flow of the underfill material 10 can be easily controlled, and the occurrence of voids due to inappropriate flow can be prevented.

As described above, in this embodiment, the underfill material 10 can be reliably filled in the filling region without changing the conventional manufacturing process and parts, and the generation of harmful voids can be prevented. Therefore, even if the pitch of the inner leads 8 is reduced, the underfill material can be efficiently filled, and a low-cost and highly reliable semiconductor device can be manufactured. Further, there is an effect that even a semiconductor chip having a large area, which has conventionally been considered difficult to fill the underfill material, can efficiently and sufficiently fill the underfill material.

When the pattern member 20A is formed of the same material as the inner leads 8, as shown in FIG.
A gap corresponding to the height of the protruding electrode is formed between the pattern member 20A and the semiconductor chip 4. For this reason,
Filling area (space) defined by pattern member 20A
Is not clearly separated from other areas, but the pattern member 2
If 0A is the same height as the inner lead 8, the effect of retaining the underfill material 10 is sufficient, and the effect of the present embodiment described above can be sufficiently exhibited.

If the underfill material 10 is poured from the periphery of the semiconductor chip 4, air will accumulate in the center of the mounting area 2a, and it may be difficult to control the flow of the underfill material 10. In such a case, as described later, a through opening may be formed in the base film 2 inside the pattern member 20A to allow air to escape.

Next, Example 2 according to the embodiment of the present invention.
Embodiment 8 to Embodiment 8 will be described. Example 2 to Example 8
Has the same configuration as the semiconductor device according to the first embodiment except that the shape and the arrangement of the pattern members are different. Therefore, only the shape and the arrangement of the pattern members will be described below.

First, a pattern member provided in the semiconductor device according to the second embodiment will be described with reference to FIG. FIG. 6 is a plan view of the pattern member 20B provided in the semiconductor device of the second embodiment.

In Embodiment 2, as shown in FIG. 6, a pattern member 20B is formed on the base film 2 instead of the pattern member 20A. The pattern member 20B
It is provided for each side of the substantially square mounting area 2a, and is formed so as to surround the inner lead 8 provided corresponding to each side.

In the semiconductor device provided with the pattern members 20B as described above, the region in which the inner leads 8 are provided, which is surrounded by the pattern members 20B, is filled with the underfill material 10.

If necessary, the pattern member 20B
The underfill material 10 may be further filled in the outside of the region surrounded by the circles, that is, the central portion of the mounting region. In this case, the material of the underfill material filled in the central portion of the mounting region may be different from the material of the underfill material 10 filled in the region surrounded by the pattern member 20B. That is, the underfill material 10 filling the area surrounded by the pattern member 20 </ b> B includes the inner leads 8 and the projecting electrodes 4 of the semiconductor chip 4.
The underfill material that fills the center of the mounting area is a material that is optimal for reinforcing the joint with a, and the material that is optimal for bonding and fixing the semiconductor chip 4 to the film base 2.

Next, a pattern member provided in the semiconductor device according to the third embodiment will be described with reference to FIG. FIG. 7 is a plan view of a pattern member 20B provided in the semiconductor device of the third embodiment.

In the second embodiment, as shown in FIG. 6, a pattern member 20C is formed on the base film 2 instead of the pattern member 20A. The pattern member 20C is
The notch 20 is formed so as to surround the inner lead 8.
C1 is provided. The notch 20C1 is provided so as to communicate the area where the inner lead 8 is provided and the central area inside the pattern member 20C.
Control the flow of

That is, a part of the underfill material 10 filling the area where the inner leads 8 are provided can flow out from the notch 20C1 to the central area. By adjusting the size and arrangement of the notch 20C1, the flow of the underfill material 10 in the area where the inner lead 8 is provided can be controlled, and the entire area where the inner lead 8 is provided can be underfilled. Lumber 10
Can be reliably filled, and the generation of voids can be prevented.

Next, a pattern member provided in the semiconductor device according to the fourth embodiment will be described with reference to FIG. FIG. 8 is a plan view of a pattern member 20D provided in the semiconductor device of the fourth embodiment.

In Embodiment 4, as shown in FIG. 8, a pattern member 20D is formed on the base film 2 instead of the pattern member 20A. The pattern member 20D is formed so as to separate the region where the inner leads 8 are provided from the central region, and has a shape such that the flow of the underfill material filling the central region is smooth. .

Next, a pattern member provided in the semiconductor device according to the fifth embodiment will be described with reference to FIG. FIG. 9 is a plan view of the pattern members 20E and 20F provided in the semiconductor device of the fourth embodiment.

In the fifth embodiment, as shown in FIG. 9, pattern members 20E and 20F are used instead of pattern member 20A.
Are formed on the base film 2. In the fifth embodiment, the underfill material 10 is filled in the entire region between the semiconductor chip 4 and the base film 2.
By controlling the flow of the underfill material 10 to the central region by the pattern members 20E and 20F, the underfill material 10 is reliably filled and the generation of voids is prevented.

Next, a pattern member provided in the semiconductor device according to the sixth embodiment will be described with reference to FIG. FIG. 10 is a plan view of the pattern members 20A and 20B provided in the semiconductor device of the sixth embodiment.

As shown in FIG. 10, in the sixth embodiment, the pattern member 20A of the first embodiment and the pattern member 20A of the second embodiment are used.
B is combined with B. That is, the pattern member 20A is provided in the central region, and the pattern member 20B is provided so as to surround the inner lead. Therefore, the effect of the pattern member 20A of the first embodiment and the effect of the pattern member of the second embodiment can be obtained. Further, the mounting region is divided into three regions by these pattern regions, and it is possible to fill each divided region with an underfill material having different characteristics.

Next, a pattern member provided in the semiconductor device according to the seventh embodiment will be described with reference to FIG. FIG. 11 is a plan view of the pattern members 20A, 20B, and 20G provided in the semiconductor device of the seventh embodiment.

As is apparent from FIG.
This embodiment is obtained by adding a pattern member 20G to the configuration of the sixth embodiment. That is, the pattern member 20G is formed in a substantially square band shape smaller than the pattern member 20A, and is provided inside the pattern member 20A. Next, a pattern member provided in the semiconductor device according to the eighth embodiment will be described with reference to FIG. FIG. 12 is a plan view of the pattern members 20A, 20B, and 20H provided in the semiconductor device of the eighth embodiment.

As is apparent from FIG. 12, the embodiment 8
This embodiment is obtained by adding a pattern member 20H to the configuration of the sixth embodiment. That is, the pattern member 20H is formed in a substantially circular strip shape smaller than the pattern member 20A, and is provided inside the pattern member 20A. The base film 2 of each embodiment described above may be provided with a through opening 2d as appropriate. 13 to 19 correspond to FIGS.
2 is a diagram corresponding to FIG. 2 and shows a configuration in which one or a plurality of through openings are provided in a semiconductor chip mounting area 2 a of a base film 2.

The through-opening 12d is an opening provided through the base fism 2, and functions as an opening for allowing air to escape when the underfill material 10 is filled. Also, an underfill material can be injected from the back side of the base film 2 through the through opening 12d. For example, in the configuration of the pattern member shown in FIG. 17, when the underfill material is to be filled inside the pattern member 20A, the underfill material cannot be filled from around the semiconductor chip 4, but the base film is not filled through the through opening 2d. Can be filled from behind.

In the above embodiment, the base film 2 is used as a substrate for a semiconductor device. However, the present invention is not limited to this. For example, another substrate such as an epoxy substrate or a ceramic substrate may be used. .

[0055]

According to the present invention as described above, the following various effects can be realized. According to the first and third aspects of the present invention, only a predetermined area defined by the pattern member needs to be filled with the filling resin, so that the filling amount of the filling resin may be small. Further, since the area to be filled with the filling resin is reduced, the flow of the filling resin can be easily controlled, and the occurrence of voids due to inappropriate flow can be prevented.

Further, the filling resin can be reliably filled in the filling region without changing the conventional manufacturing process and parts.
The generation of harmful voids can be prevented. Therefore, even if the pitch of the electrodes on the substrate is reduced, the filling resin can be efficiently and sufficiently filled, and an inexpensive and highly reliable semiconductor device can be manufactured. Further, even a semiconductor element having a large area, which has conventionally been considered difficult to fill with a filling resin, can be efficiently and sufficiently filled with the filling resin.

Further, when filling the filling resin, air can be released through the through-opening, and efficient filling can be achieved. Further, the filling resin can be supplied from the back side of the substrate through the through-opening.

According to the second and fourth aspects of the present invention, the pattern member can be formed simultaneously in the step of forming the inner lead or the circuit pattern on the substrate, without increasing the number of parts and without adding a manufacturing step. The pattern member can be easily formed on the substrate.

[Brief description of the drawings]

FIG. 1 is a plan view of a base film (tape substrate) used in a semiconductor device having a COF structure based on a conventional TAB technique.

FIG. 2 is an enlarged cross-sectional view showing a state where a semiconductor chip is mounted on the tape substrate shown in FIG.

FIG. 3 is a plan view of a base film used for the semiconductor device of Example 1 according to the embodiment of the present invention.

FIG. 4 is a cross-sectional view of the base film shown in FIG. 3, taken along the line IV-IV.

FIG. 5 is an enlarged sectional view showing a part of the semiconductor device according to the first embodiment;

FIG. 6 is a plan view of a pattern member provided in a semiconductor device according to a second embodiment.

FIG. 7 is a plan view of a pattern member provided in a semiconductor device according to a third embodiment.

FIG. 8 is a plan view of a pattern member provided in a semiconductor device according to a fourth embodiment.

FIG. 9 is a plan view of a pattern member provided in a semiconductor device according to a fifth embodiment.

FIG. 10 is a plan view of a pattern member provided in a semiconductor device according to a sixth embodiment.

FIG. 11 is a plan view of a pattern member provided in a semiconductor device according to a seventh embodiment.

FIG. 12 is a plan view of a pattern member provided in a semiconductor device according to an eighth embodiment.

FIG. 13 is a plan view showing a through-opening provided in a base film of the semiconductor device of Example 2.

FIG. 14 is a plan view showing a through-opening provided in a base film of the semiconductor device of Example 3.

FIG. 15 is a plan view showing a through-opening provided in a base film of a semiconductor device of Example 4.

FIG. 16 is a plan view showing a through-opening provided in a base film of a semiconductor device of Example 5.

FIG. 17 is a plan view showing a through-opening provided in a base film of a semiconductor device of Example 6.

FIG. 18 is a plan view showing a through-opening provided in a base film of a semiconductor device of Example 7.

FIG. 19 is a plan view showing a through-opening provided in a base film of a semiconductor device of Example 8.

[Explanation of symbols]

Reference Signs List 2 base film 2a mounting area 2b wiring area 2c sprocket hole 2d through opening 4 semiconductor chip 4a protruding electrode 6 mounting electrode pad 8 inner lead 10 underfill material 12 resist 14 alignment mark 20A, 20B, 20C, 20D, 20E, 20F, 2
0G pattern member

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Junichiro Hiyoshi 4-1-1, Kamidadanaka, Nakahara-ku, Kawasaki-shi, Kanagawa F-term within Fujitsu Limited (reference) 5F044 MM01 MM03 NN08 5F061 AA01 BA03 BA05 CA26 GA05

Claims (4)

[Claims] A semiconductor device, a substrate having a mounting area on which the semiconductor element is mounted, a filling resin for fixing the semiconductor device to the mounting area, and a resin formed on the substrate in the mounting area; A pattern member that defines a predetermined region between the semiconductor device and the substrate; an opening that penetrates the substrate is formed in a predetermined region defined by the pattern member; A semiconductor device, wherein a predetermined region defined by a pattern member is filled. 2. The semiconductor device according to claim 1, wherein an inner lead for connecting an electrode of the semiconductor device and an electrode pad on the substrate is provided around the mounting area,
The semiconductor device, wherein the pattern member is made of the same material as the inner lead and has the same thickness. 3. A mounting region on which a semiconductor element is mounted, an external connection electrode provided outside the mounting region, and an electrode of the semiconductor device and the external connection electrode provided around the mounting region. And a pattern member formed in the mounting area and defining a predetermined area between the semiconductor element and the substrate when the semiconductor element is mounted on the mounting area. And a through-opening formed in a predetermined region defined by the pattern member. 4. The substrate for a semiconductor device according to claim 3, wherein the pattern member is made of the same material and has the same thickness as the external connection electrode and the inner lead. substrate.