JP2001284238A - Electromagnetic wave transmission device, electromagnetic wave resonance device, plasma processing device, exposure system, and device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electromagnetic resonance device small in dead space, simple in structure, capable of preventing sealing members from being deformed, hardened, and damaged by protecting them against microwaves. SOLUTION: An electromagnetic resonance device is equipped with dielectric blocks 12 and 11, a dielectric block 13 provided with a mounting flange, a holding member 15 which holds the dielectric block 12 and is provided with a terminating face 26 which terminates as leakage electromagnetic waves, and a sealing means 20 provided between the flange of the dielectric block 13 and the holding member 14. Provided that the guide wavelength of microwaves is represented by λg, the electric length of a homogenized line 23 is set as an integer times as long as λg/2, an electric length between the sealing member 20 and the terminating face 26 is set as an even number times as long as λg/4, and an electric length between the homogenized line 23 and the terminating face 26 is set as an even number times as long as λg/4.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electromagnetic wave resonance device for transmitting an electromagnetic wave along a transmission waveguide extending from a waveguide means provided on the atmosphere side to a gas atmosphere side, and provided on an atmosphere side. The present invention relates to an electromagnetic wave resonance device that resonates an electromagnetic wave with a resonance waveguide extending from a waveguide unit to a gas atmosphere side. The invention also relates to a plasma processing apparatus and an exposure apparatus including such an electromagnetic wave resonance device. Further, the present invention relates to a device manufacturing method using such a plasma processing apparatus and an exposure apparatus. In this specification, the length along the propagation path of the electromagnetic wave in consideration of the dielectric is referred to as an electrical length.

[0002]

2. Description of the Related Art In a plasma processing apparatus using microwaves, a sealing method using a sealing flange using a dielectric plate as a part of a waveguide for supplying microwaves is frequently used. It is essential that the plasma processing apparatus and the like be provided with an introduction window that allows microwaves to pass while vacuum is sealed. Since this introduction window usually uses ceramics Teflon (registered trademark) or the like, which is a kind of insulator, the boundary between the chamber and the frame of the chamber is made of O using fluorine-based rubber or the like.
Sealing is always performed using a relatively soft material such as a ring. Such a plasma processing apparatus is applied to CVD, direct oxidation / nitridation, and the like, particularly in the semiconductor industry where ultra-fine processing and high clean processing are required.

[0003]

However, in the conventional sealing method, it is necessary to design the flange larger than the waveguide in order to protect the sealing member. Becomes large. In addition, a seal is required at a portion other than the microwave introduction window, and a leak-free structure must be provided for all waveguides leading to the chamber, which complicates the structure of the device.

Further, the flange is not completely protected from microwaves against the O-ring and the like. In particular, when the waveguide for supplying the microwaves constitutes a resonance system, the flange does not protect the seal member from the microwaves. Was difficult to protect.
Therefore, since the sealing member is usually weak to microwave irradiation, minute dust and evaporative gas are radiated from the sealing member irradiated with microwave, and the O-ring and the like are irradiated with microwave to deform, harden, break, etc. May induce metamorphosis.

In particular, since a chamber used for semiconductor production is required to have a high degree of vacuum and a high degree of cleanliness, a conventional sealing method is used to radiate a microwave from a sealing member irradiated with microwaves. There is a problem that the inside of the chamber is contaminated by the minute dust and evaporative gas. In addition, there is a problem that long-term reliability is affected by the deformation and hardening of the seal member by being irradiated with microwaves. Further, there is a problem in that the breakage of the seal member due to the irradiation of the microwave causes breakage of the vacuum, occurrence of a special gas leakage accident, and shutdown of the entire production line. Therefore, in the semiconductor industry, where stopping the line causes a great deal of damage, it is desired to improve the sealing durability and safety of the plasma processing apparatus using microwaves.

Similarly, when an extremely active gas such as fluorine is used and a conventional sealing method is employed for a laser light source such as an excimer laser which is extremely sensitive to impurities, the required performance such as high cleanliness is required. And durability could not be met.

In view of the above circumstances, the present invention provides an electromagnetic wave which has a small dead space, has a simple device structure, and protects the seal member from electromagnetic waves from microwaves to prevent deformation, hardening and breakage of the seal member. It is an object to provide a transmission device and an electromagnetic wave resonance device. Another object of the present invention is to provide a plasma processing apparatus and an exposure apparatus which have high cleanliness and can improve durability and safety. Further, it is another object of the present invention to provide a device manufacturing method capable of improving productivity by improving a device production process.

[0008]

In order to solve the above problems, an electromagnetic wave transmission device according to the present invention transmits an electromagnetic wave along a transmission waveguide extending from a waveguide means provided on the atmosphere side to a gas atmosphere side. An electromagnetic wave transmission device, which is disposed on the atmosphere side and forms a part of a transmission waveguide.
A second dielectric block disposed on the gas atmosphere side and forming a part of the transmission waveguide, and disposed between the first dielectric block and the second dielectric block; A third dielectric block having a portion forming a part of the transmission waveguide, and a mounting flange portion;
A first holding member that holds the dielectric block of FIG. 1 and has a termination surface that terminates electromagnetic waves leaking from the transmission waveguide, a second holding member that holds the second dielectric block, and a third dielectric member. flange body block and is provided with a sealing means provided between the second holding member, when representing the guide wavelength of an electromagnetic wave at lambda _g, the electrical length between the sealing means and the end surface It is set to an even multiple of λ _g / 4, and the electrical length between the transmission waveguide and the termination surface is set to an even multiple of λ _g / 4.

According to the present invention, the dead space can be reduced and the structure can be simplified. Further, since the electrical length between the sealing means and the terminal surface is set to an even multiple of λ _g / 4, the electric field intensity of the electromagnetic wave applied to the sealing means is minimized, and the dielectric loss in the sealing means is reduced. And generation of fine dust and evaporative gas in the sealing means and deformation, hardening and breakage of the sealing member can be prevented. Furthermore, since the electrical length between the transmission waveguide and the termination surface is set to an even multiple of λ _g / 4, it is possible to prevent electromagnetic waves from leaking from the transmission waveguide to the termination surface.

In the above invention, it is preferable that the electrical length between the boundary surface between the first and second holding members and the terminal surface is set to an odd multiple of λ _g / 4. In this case,
Electromagnetic waves can be prevented from leaking to the outside along the boundary between the first and second holding members.

Further, in the above invention, the third dielectric material
Provided between the flange portion of the block and the first holding member.
The second sealing means, wherein the electrical length between the second sealing means and the terminal surface.
Is λ _gSecond sealing means set to an even multiple of / 4,
A third sealing hand provided between the first and second holding members
Preferably, the method further comprises a step. In this case,
A gas atmosphere and an air atmosphere are provided by the first and second sealing means.
One of the sealing means is broken due to the enclosed air.
The sealing performance is improved by the other sealing means.
Can be maintained. In addition, the first and the second seal means can be used.
Prevents gas leakage and air intrusion at the boundary between the second holding members
Can be stopped.

In the above invention, a microwave can be used as an example of the electromagnetic wave.

Further, the electromagnetic wave resonance device of the present invention is an electromagnetic wave resonance device for resonating an electromagnetic wave with a resonance waveguide extending from the waveguide means provided on the atmosphere side to the gas atmosphere side, and is arranged on the atmosphere side. A first dielectric block forming a part of the resonant waveguide, a second dielectric block disposed on the gas atmosphere side and forming a part of the resonant waveguide, and a first dielectric block. A third dielectric block that is disposed between the second dielectric block and forms a part of the resonant waveguide, has a mounting flange, and holds the first dielectric block. In addition, a first holding member having a termination surface for terminating an electromagnetic wave leaking from the resonance waveguide, a second holding member for holding the second dielectric block, a flange portion of the third dielectric block, and a second holding member. Between the two holding members It has and a vignetting sealing means, when representing the guide wavelength of an electromagnetic wave at lambda _g, resonant electrical length of the waveguide is set to an integral multiple of lambda _g / 2, and the sealing means and the end face Is set to an even multiple of λ _g / 4, and the electrical length between the resonant waveguide and the termination surface is set to an even multiple of λ _g / 4.

According to the present invention, the dead space can be reduced and the structure can be simplified. Further, since the electrical length between the sealing means and the terminal surface is set to an even multiple of λ _g / 4, the electric field intensity of the electromagnetic wave applied to the sealing means is minimized, and the dielectric loss in the sealing means is reduced. And generation of fine dust and evaporative gas in the sealing means and deformation, hardening and breakage of the sealing member can be prevented. Furthermore, since the electrical length between the transmission waveguide and the termination surface is set to an integral multiple of λ _g / 2, it is possible to prevent electromagnetic waves from leaking from the transmission waveguide to the termination surface.

In the above invention, it is preferable that the electrical length between the boundary surface between the first and second holding members and the terminal surface is set to an odd multiple of λ _g / 4. In this case,
Electromagnetic waves can be prevented from leaking to the outside along the boundary between the first and second holding members.

In the above invention, the electric length between one end surface of the resonant waveguide and the third dielectric block is set to an odd multiple of λ _g / 4, and the other end of the resonant waveguide is set. The electrical length between the end surface of the third dielectric block and the third dielectric block is λ _g
It is preferably set to an odd multiple of / 4. Also in this case, it is possible to prevent the electromagnetic wave from leaking from the transmission waveguide to the terminal surface.

Further, in the above invention, the second sealing means provided between the flange portion of the third dielectric block and the first holding member, wherein the electrical length between the second sealing means and the terminal surface is reduced. It is preferable to further include second sealing means set to an even multiple of λ _g / 4, and third sealing means provided between the first and second holding members. In this case, the gas atmosphere and the air atmosphere are isolated by the first and second sealing means, so that even if one of the sealing means is broken, the sealing performance can be maintained by the other sealing means. . Also, the first sealing means can
In addition, gas leakage and air intrusion at the boundary between the second holding members can be prevented.

In the above invention, a microwave can be used as an example of the electromagnetic wave.

Further, the plasma processing apparatus according to the present invention includes an electromagnetic wave resonance device according to the above invention, an antenna means for introducing an electromagnetic wave into the electromagnetic wave resonance device, and a substrate surface treatment utilizing plasma which generates plasma by the resonated electromagnetic wave. And a plasma chamber in which is performed.

Further, the exposure apparatus of the present invention comprises a laser light source for emitting a laser, an illumination optical system for illuminating a laser emitted from the laser light source on a reticle on which a desired pattern is formed, And a means for holding and fixing the substrate, wherein the laser light source is an electromagnetic wave resonator of the invention, and an electromagnetic wave is emitted into the electromagnetic wave resonator. The apparatus includes an antenna unit to be introduced, a laser chamber that generates plasma by resonating electromagnetic waves and excites laser light using the plasma, and a resonance system that resonates the laser light before and after the laser chamber.

In the above invention, an excimer laser light source can be used as the laser light source.

Further, the device manufacturing method of the present invention includes a step of subjecting a substrate to a surface treatment using the plasma processing apparatus of the present invention.

Further, a device manufacturing method of the present invention includes a step of subjecting a substrate to exposure processing using the exposure apparatus of the present invention.

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, the propagation characteristics of microwaves in a waveguide terminated with a metal plate will be described. still,
Since the propagation characteristics of the microwave in the waveguide are three-dimensional and extremely complicated, the description will proceed instead of an essentially equivalent distributed constant circuit.

The input impedance Z _in of the distributed constant circuit terminated by the load is given by the following equation (1). Z _in / Z ₀ = {(Z + Z ₀ tanh (γL)} / {(Z ₀ + Z tanh (γ L)} (1) where Z: load impedance Z ₀ : characteristic impedance of distributed constant circuit : Propagation constant L: Length of distributed constant circuit

When the load is a metal plate, since the impedance Z is 0, the input impedance Z
_in is given by the following equation (2), assuming that γ = iβ (i: imaginary unit, β: phase constant). Z _in = iZ ₀ tan (βL) (2) As can be seen from Expression (2), every time βL takes a value equal to an integral multiple of π / 2, the input impedance Z _in becomes a value of 0 or ∞. Are alternately taken. That is, when an arbitrary natural number is represented by N, when βL = (2N−1) π / 2, Z _in = ∞ (3) When βL = 2Nπ / 2, Z _in = 0 ( 4)

Therefore, as can be seen from equations (3) and (4), when the distributed constant circuit terminated by the metal plate is viewed from the input side, the value of the input impedance Z _in is set to 0 (short-circuit state) or ∞. (Open state). Rewriting the phase constant β in this case with the wavelength λ,
The following equation (5) is derived. L = Nπ / 2β = λ / 2π · Nπ / 2 = Nλ / 4 (5)

As can be seen from the above considerations, when the length of the distributed constant circuit terminated by the metal plate is changed every quarter wavelength, the impedance of the portion connected to the distributed constant circuit becomes 0 or ∞. It can be set to. here,
When the impedance of the connection portion becomes 0, the electric field takes a minimum value, while the current takes a maximum value. On the other hand, when the impedance of the connection portion becomes ∞, the electric field takes the maximum value, while the current takes the minimum value.

Therefore, when the guide wavelength of the microwave propagating in the waveguide terminated by the metal plate is represented by λ _g , the electric field in the waveguide is an odd multiple of λ _g / 4 of the electric length from the termination surface. While the electrical length is λ _g
The minimum value is taken at a position that is an even multiple of / 4. In addition, the electric current on the waveguide surface has an electric length of λ _g / 4
The minimum value is obtained at a position where the electrical length is an odd multiple of, and the maximum value is obtained at a position where the electrical length is an even multiple of λ _g / 4 from the terminal surface.

Next, the dielectric loss when the microwave propagates through the dielectric will be described. The dielectric loss P in a general dielectric is given by the following equation (6). P = ωεE ² tan δ / 2 (6) where ε: dielectric constant of dielectric E: microwave electric field strength ω: angular frequency of microwave δ: loss angle

Therefore, as can be seen from Equation (6), the dielectric loss P in the dielectric can be suppressed by lowering the dielectric constant ε of the dielectric, the loss coefficient tan δ of the dielectric, and the electric field strength E of the microwave. . In particular, the dielectric loss P in the dielectric
Is proportional to the square of the microwave electric field strength E,
By reducing the electric field strength E of the microwave, the dielectric loss P in the dielectric can be suppressed most effectively.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. First, a first embodiment of the present invention will be described with reference to FIG. FIG.
1 mainly shows a schematic configuration of a microwave resonator according to an embodiment of the present invention. The microwave resonance device 10 shown in FIG. 1 is a device that generates a line-shaped plasma P using microwaves.
2, 13 and holding members 14 and 15 formed by processing conductors. The microwave resonator 10 is used, for example, as a component of a plasma processing apparatus that performs surface treatment of a substrate using plasma or an exposure apparatus that obtains laser light using plasma.

The dielectric block 11 is a dielectric block 13
And is held by the holding member 14. On the other hand, the dielectric block 12 is joined to the other surface of the dielectric block 13 and is held by the holding member 15.
The dielectric block 13 includes the holding members 14, 1
5 and is held.

The dielectric blocks 11 and 12 form a microwave resonant waveguide (uniform line) 23 with the dielectric block 13 interposed therebetween. That is, the space above the holding member 14 is a gas atmosphere, and the space below is the air atmosphere, and the dielectric block 11 is a portion of the homogenization line 23 on the gas atmosphere side, and the dielectric block 12 is a uniform gas atmosphere. Transmission line 2
(3) A part on the atmosphere side and a part of the dielectric block 13 is a boundary part between the gas atmosphere of the uniformizing line 23 and the atmosphere. The remaining part of the dielectric block 13 is a mounting flange. Z of the equalizing line 23
Axial height is to resonate propagates in the z-axis direction in microwave uniforming line within 23 (Among Figure 1, lambda _g / 2 three times) an integral multiple of lambda _g / 2 in Is set.

A slot 17 is provided on one end surface 24 of the equalizing line 23, while a plurality of (two in FIG. 1) slots are provided on the other end surface 25 of the equalizing line 23. 18 are provided. The end surface 24 is the holding member 1
4, while the end surface 25 is provided on the holding member 15.
And a part of one surface of the holding member 16 in contact with the holding member 16. An H-plane antenna 19 is formed in the holding member 16 so as to be connected to each slot 18. The H-plane antenna 19 includes a dielectric (for example, alumina (relative permittivity: 9.8)).
Is filled.

Microwaves are introduced from the H-plane antenna 19 through each slot 18 into the equalizing line 23. The microwave introduced into the equalizing line 23 propagates while changing the wavefront in the x-axis direction continuously and uniformly, and
, A linear plasma P extending in the x-axis direction is generated.

A groove 29 is formed in the holding member 15 in order to determine a termination surface 26 that terminates microwaves leaking from the uniformized line 23. The groove 29 is formed by digging, welding, brazing, or the like so as to reliably terminate the microwave. Therefore, when the through hole 30 connected to the groove 29 is formed in the holding member 15, it is necessary to form the groove 29 so as to satisfy the microwave cutoff condition. The through hole 30 will be described later.

Therefore, in this embodiment, the equalizing line 23
Even multiple (in FIG. 1, four times the lambda _g / 4) electrical length of lambda _g / 4 between the side surface and the end surface 26 of such a groove 29
Are formed on the holding member 15. In this case, as can be seen from Equation (3), the impedance of the branch surface 27 (broken line) as viewed from the terminal surface 26 is zero. At this time,
When viewed from the end surface 26 side, it can be considered that the branch surface 27 is short-circuited. Accordingly, the electric field intensity of the microwave becomes zero at the branch surface 27 and the branch surface 27 functions as a pseudo metal plate, so that leakage of the microwave from the uniformized line 23 to the flange portion of the dielectric block 13 can be suppressed.
Note that the branch surface 27 is a boundary surface between a portion of the dielectric block 13 forming the equalizing line 23 and the flange portion.

In the present embodiment, each of the terminal surfaces 24, 2
5 and the electric length between the center position of the dielectric block 13 is λ
It is set to an odd multiple of _g / 4 (three times of _λg / 4 in FIG. 1). Therefore, the impedance at the branch surface 27 as viewed from the terminal surfaces 24 and 25 becomes ∞. At this time, when viewed from the end surfaces 24 and 25, it can be considered that the branch surface 27 is open, and the current flowing around the branch surface 27 is zero.
Becomes Therefore, leakage of the microwave from the uniformized line 23 to the flange portion of the dielectric block 13 can be suppressed.
In the case of a microwave transmission device used for microwave transmission, it is not necessary to consider the conditions in this paragraph.

A seal member 20 is embedded in the holding member 14, and the gas in the gas atmosphere is stopped at the installation position of the seal member 20. On the other hand, the seal member 21 is embedded in the holding member 15, and the air in the air atmosphere is stopped at the installation position of the seal member 21. Note that a seal member 22 is also embedded in the holding member 15, and the air in the air atmosphere is stopped even at the installation position of the seal member 22.

In the present invention, the generation of fine dust / evaporated gas at the sealing members 20 and 21 and the deformation and deformation of the sealing members 20 and 21
In order to prevent hardening and breakage, it is necessary to reliably suppress dielectric loss due to microwave irradiation. Therefore, in this embodiment, even multiple of the electrical length of lambda _g / 4 from the end face 26 (in FIG. 1, two times of lambda _g / 4) in a position, the sealing member 20, 21 is provided . Therefore, the end face 2
The impedance at the installation position of the seal members 20, 21 as viewed from the sixth side becomes zero. At this time, when viewed from the end surface 26 side, it can be considered that the installation positions of the seal members 20 and 21 are short-circuited, and the electric field intensity of the microwave applied to the seal members 20 and 21 becomes zero. Therefore, the dielectric loss in the seal members 20 and 21 becomes zero, and the seal member 2
Fine dust / evaporation gas generation at 0, 21; sealing member 2
0, 21 can be prevented from being deformed, hardened, or damaged.

In practice, the sealing member has a finite size.
Therefore, the electrical length from the termination surface 26 is λ _gEven number of / 4
To install the entirety of the sealing members 20 and 21
Impossible. For this reason, this position is practically
And the sealing member 2 in consideration of the electric field distribution of the microwave.
By installing 0 and 21, the sealing members 20 and 21 are provided.
The electric field strength of the microwave radiated over the entire
Can be suppressed to the bell. Therefore, in the sealing members 20 and 21,
Can be suppressed to the minimum level.

In the seal members 20 and 21, it is preferable that the product of the relative permittivity and the loss coefficient is low. For details,
In the sealing members 20 and 21, the values of the relative permittivity and the loss coefficient are preferably 10 ⁻² or less, more preferably 10 ⁻³ or less. In this case, as can be seen from Expression (6), the level of occurrence of dielectric loss in the seal members 20 and 21 can be further reduced to about -20 to -30 dB. In addition, as a material that can realize such a value, for example, polystyrene, fluorine rubber, Teflon-based rubber can be given.

At the same time, the dielectric blocks 11 to 13
Must also be suppressed. Therefore, equation (6)
As can be seen from the above, as the material of the dielectric blocks 11, 12, and 13, a material in which the product of the specific power supply rate and the loss coefficient is low is preferable. Specifically, as the material of the dielectric blocks 11 to 13, for example, alumina, aluminum nitride, quartz,
Teflon is preferred. By the way, since each dielectric block forms a part of the microwave resonance system, there is a possibility that the dielectric blocks 11 to 13 absorb the microwave and the temperature rises. Therefore, in particular, the dielectric blocks 11 to 1
Examples of the material 3 include materials having high thermal conductivity, for example, alumina (thermal conductivity: up to 30 [W / m · K]) and aluminum nitride (thermal conductivity: up to 160 [W / m · K]). More preferred.

The guide wavelength of the microwave propagating in the dielectric is usually inversely proportional to the square term of the dielectric constant of the dielectric. For this reason, the size of the dielectric block is generally determined by the material of the dielectric block. Therefore, in order to make the size of the dielectric block compact, it is necessary to select a material having a high dielectric constant for the material of the dielectric block.

By the way, one seal member is sufficient to separate the gas atmosphere from the air atmosphere, but if the seal member is broken, the separation between the gas atmosphere and the air atmosphere is lost. Therefore, in the present embodiment, the gas atmosphere and the air atmosphere are doubly isolated by using two seal members. Therefore, even if one of the seal members is damaged by microwave irradiation or the like, the remaining seal members isolate the gas atmosphere from the air atmosphere.
It is possible to prevent the gas from leaking into the air atmosphere or the air from entering the gas atmosphere.

In order to hold a plurality of dielectric blocks as in this embodiment, a plurality of holding members are practically required. Therefore, there is a possibility that the boundary surface 28 between the holding members 20 and 21 becomes a microwave leakage path. As a measure to prevent microwaves from leaking from the boundary surface 28, a pitch sufficiently shorter than the wavelength of the microwaves in free space (for example, a pitch equal to or less than a quarter wavelength of the microwaves in free space) It is conceivable that a conductor screw is installed on the atmosphere side from the seal member 22 so that the boundary surface 28 has a shielding effect.
However, in this case, the terminal surface (the conductor screw installation surface or the holding members 20 and 2) depends on the degree of tightening of the conductor screw.
(I.e., the first electrical contact portion) may be changed, which may cause adverse effects such as inability to obtain stable performance.

[0048] Therefore, in this embodiment, odd multiple of the electrical length of lambda _g / 4 from the end face 26 (in FIG. 1, lambda _g / 4) interface 28 is installed in a position. Therefore, the impedance of the boundary surface 28 as viewed from the terminal surface 26 becomes ∞. At this time, when viewed from the end surface 26 side, the boundary surface 28 can be regarded as being open, and the current flowing around the boundary surface 28 is minimized. Therefore, the microwave is applied to the interface 2
8 can be prevented from leaking.

Here, with reference to FIG.
The variation of the shape of the groove 29 of No. 5 will be described.
Until now, the short side direction of the uniformized line 23 (y-axis direction)
Have been described. However,
Considering the dielectric block 13 in the long end direction (x-axis direction) of the uniformized line 23, there are some variations in the shape of the groove 29 due to the three-dimensional waveguide characteristics of the uniformized line 23. Can be considered.

Long end side direction (x-axis direction) of the uniformized line 23
When the shape of the groove 29 is considered in the same manner as in the short side direction (y-axis direction), the shape of the groove 29 is, for example, (a)
(B). That is, the grooves 29 are provided on all side surfaces of the uniformized line 23. The groove 29 is generally formed by digging. For this reason, it is difficult to process the four corners of the groove 29 with high accuracy. Therefore, the shape shown in FIG.
Since the four corners of the groove 29 are rounded, the processing is easier than the shape shown in FIG.

By the way, a properly designed equalizing line 2
Microwave mode propagating in 3 basically close to the TE ₁₀ mode. For this reason, there is no current crossing the short end surface (the surface perpendicular to the x-axis) of the uniformized line 23 in the z-axis direction.
Microwave leakage in the x-axis direction is unlikely. Therefore, it is not always necessary to provide the groove 29 in the y-axis direction.

In such a case, the shape of the groove 29 is, for example, as shown in (c) and (d). In (d), a groove 29 is formed in a portion of the holding member 15 having the same width in the x-axis direction of the uniformized line 23. Therefore, the shape shown in (d) can be realized by forming the groove 29 in the shape shown in (c), and then filling metal pieces or the like at both ends of the groove 29 in the x-axis direction. High-precision processing can be performed. In any case, the groove 29 is formed in consideration of the propagation characteristics of the microwave in the dielectric block 13.
By selecting the shape, it is possible to realize a structure in which microwave leakage hardly occurs.

Note that, with respect to the x-axis direction, the dielectric block 1
The reason why the end of No. 3 does not match the end of the equalizing line is that
This is because the seal members 20, 21 are provided between the two. Therefore, if the distance between the dielectric block 13 and the equalizing line 23 becomes equal to a specific value, microwave resonance may occur and a good leakage prevention effect may not be obtained. In this case, the interval described above may be determined by applying the above-described discussion.

Next, a specific example of this embodiment will be described. The following numerical values are merely examples, and can be changed to various values within the scope of the present invention.

In this specific example, a microwave (2.45 GHz) generated by a magnetron (a type of microwave generator) is used.
z) was introduced into the H-plane antenna 19. H-plane antenna 19
The cross-sectional radius of the waveguide for introducing microwave into the
It was set to 0 mm x 50 mm. Microwaves propagate in this waveguide in the TE10 mode. In addition, a tuner was installed via an isolator for protecting the power supply in order to match the load plasma.

The H-plane antenna 19 was filled with alumina (relative permittivity: 9.8). Therefore, taking into account the size of the waveguide for introducing microwaves into the H-plane antenna 19 and the relative permittivity of alumina filled in the H-plane antenna 19, the waveguide of the H-plane antenna 19 is used. 32mm inside diameter
It was set to 16 mm. In this specific example, the waveguide is reduced in size in the vertical and horizontal directions, but the waveguide may be reduced in the vertical and horizontal directions. Further, the inner diameter of the H-plane antenna 19 in the x-axis direction is set to 247 m, which is equal to five times the guide wavelength of the microwave, so as to correspond to the line-shaped plasma processing apparatus for 200 mm wafer.
m.

Aluminum nitride (dielectric constant: 8.8) is selected as the material of the dielectric blocks 11 and 12, and the size of the uniformized line 23 is set to 248.4 mm (x-axis direction) × 20.7 mm.
(Y-axis direction) × 62.1 mm (z-axis direction).
The material of the dielectric block 13 is aluminum nitride (relative permittivity:
8.8), a withstand voltage of 5 × 10 ⁵ Pa or more was secured, and the thickness of the dielectric block 13 in the z-axis direction was set to 5 mm. Therefore, considering the free space wavelength approximation, the quarter-wavelength of the microwave propagating in the dielectric block 13 is 10.35 mm.

Therefore, the electrical length of the terminal surface 26 and the branch surface 27 was set to 10.35 mm. The electrical length of the terminal surface 26 and each of the sealing members 20 and 21 was set to 20.70 mm. Further, the electrical length between each of the terminal surfaces 24 and 25 and the branch surface 27 was set to 41.4 mm. In addition, in order to realize a more reliable cut-off, a cylindrical shape is selected for the shape of the through hole 29.
Less than one-eighth wavelength of microwaves in free space,
φ3 mm was set.

The microwave resonator 1 thus designed
When the surface treatment of the wafer was performed by including the 0 and H-plane antennas 19 in the plasma processing apparatus for a 200 mm wafer, leak generation and gas contamination due to breakage of the seal members 20 and 21 due to microwave irradiation occurred. Did not. Further, it has been confirmed that the exhaust characteristics during evacuation are improved as compared with the conventional case, and the effect that dead space is reduced. Furthermore, when a high-power microwave pulse exceeding the rating was forcibly propagated into the dielectric block 13, the sealing member 2
Although the 0 and 21 were damaged, it was confirmed that the monitoring system connected to the through hole 30 detected an increase in pressure due to the damage of the seal members 20 and 21 and that the various devices were urgently stopped.

It should be noted that these facts should also be confirmed when the present invention is applied to a plasma processing apparatus for a 300 mm wafer and a plasma processing apparatus for a flat panel, which have the same basic principle as that of a linear plasma processing apparatus for a 200 mm wafer. Was completed.

Therefore, according to the present embodiment, the dead space can be reduced and the structure can be simplified. Further, since the seal member can be protected from electromagnetic waves and dielectric loss in the seal member can be suppressed, generation of fine dust and evaporative gas in the seal member, and deformation, hardening and breakage of the seal member can be prevented.

Although the present embodiment has been described with respect to the microwave resonator, the same effect as that of the present embodiment can also be obtained by applying the present embodiment to a microwave transmission device for transmitting microwaves. .

Next, the second embodiment of the present invention will be described with reference to FIG.
An embodiment will be described. Hereinafter, the same reference numerals are given to the same components as those in FIG. 1 and the description is omitted. FIG. 3 is a block diagram showing a group of devices from microwave generation to substrate surface treatment using plasma. The plasma processing apparatus 40 shown in FIG. 3 includes the H-plane antenna 19, the microwave resonator 10, and the plasma chamber 41.
The plasma processing apparatus 40 is, for example, a plasma CVD
It is used as a device or a plasma PVD device.

The microwave generated by the microwave generator (for example, magnetron, klystron, gyrotron) 42 is introduced into the H-plane antenna 19 through the waveguide 43, the matching unit 44, and the waveguide 45. When the plasma is a load, the load of the microwave usually fluctuates with the fluctuation of the plasma. Therefore, in the present embodiment, a matching unit 44 (for example, a three-stap tuner, an EH tuner, and a 4E tuner) is used.

The microwaves that have reached the H-plane antenna 19 are introduced into the microwave resonator 10 and resonate, and then further introduced into the plasma chamber 41 to generate plasma. Using this plasma, a substrate (not shown) provided in the plasma chamber 41 is subjected to a surface treatment (for example, plasma oxidation and nitridation).

Therefore, according to the present embodiment, since the microwave resonator 10 of the first embodiment is included,
In addition to the high-density plasma near the atmospheric pressure, the sealing members 20, 2
1 (see FIG. 1) prevents generation of fine dust and evaporative gas, and prevents deformation, hardening, and breakage of the seal members 20, 21. Therefore, the gas in the plasma chamber 41 is maintained at a high purity without being contaminated by impurities. Therefore, the durability and safety of the plasma processing apparatus 40 can be improved, the service life can be extended, and high-speed and high-quality substrate surface treatment (for example, film formation on a substrate) can be realized.

Next, a third embodiment of the present invention will be described with reference to FIGS. FIG. 4 shows a schematic configuration of a laser light source that excites and emits a laser using a microwave. FIG. 5 shows a schematic configuration of an exposure apparatus including the laser light source of FIG. An exposure apparatus 50 shown in FIG. 5 includes a laser light source 51, a mirror 52, and an illumination optical system 5.
3, a mask stage 54, a projection optical system 55, a wafer chuck 56, and a wafer stage 57. The exposure device 50 is used, for example, as a stepper or a scanner.

As shown in FIG. 4, the laser light source 51
The surface antenna 19, the microwave resonator 10, the laser chamber 58, the partial reflecting mirror 59, and the total reflecting mirror 60 are provided. The laser light source 51 is used as a light source that emits excimer laser light (for example, KrF laser light, ArF laser light, F2 laser light).

In the laser light source 51, the microwave arriving inside the H-plane antenna 19 is introduced into the microwave resonator 10 and resonates, and further introduced into the laser chamber 58. At this time, in the laser chamber 58,
Plasma P is being generated. When the plasma P is irradiated with microwaves, the constituent particles of the plasma P are excited, and the excited particles undergo optical transition to generate laser light L.

As shown in FIG. 5, the laser light emitted from the laser light source 51 is introduced into the illumination optical system 53 after passing through the mirror 42, and passes through a predetermined circuit pattern formed on the reticle 61. The light patterned by the reticle 61 is reduced via the projection optical system 55, and
2 is formed. The wafer 62 is held by suction on a wafer chuck 56, and the wafer chuck 56 is fixed on a wafer stage 57 having an operation mechanism (not shown).

In this embodiment, a transmission type reticle is used, but a reflection type reticle may be used. Further, in the present embodiment, the projection optical system of the reduction projection type is used, but a projection optical system of the same magnification projection type may be used.

As a method of oscillating a laser, a pulse oscillation method and a continuous oscillation method are known. In particular, the continuous oscillation method is easy in narrowing the band and controlling the exposure amount, does not require pulse synchronization control, and has very little damage to the optical system such as a lens by a laser.

However, since the laser light source 51 includes the microwave resonator 10,
8 can be prevented from being contaminated with impurities,
The laser gas can be kept at high purity. For this reason, when the laser light source 51 employs the continuous oscillation method,
Short-term fluctuations and changes over time of the output light intensity can be suppressed, and stable laser output can be performed with high efficiency and high luminance. Similarly, even when the laser light source 51 employs a pulse oscillation method, fluctuations in laser output due to changes in impurities in the laser gas can be suppressed, and stable laser output can be performed.

As described in the first embodiment,
The seal members 20 and 21 of the microwave resonator 10 (FIG. 1)
) Can be reliably and safely detected, so that a laser output having a long life can be realized.

Therefore, according to the present embodiment, in the exposure apparatus 50 including such a laser light source 51, exposure control can be simplified, and low cost and long life can be realized. Safety and durability can be improved. In particular, when the laser light source 51 employs the continuous oscillation method, the pulse synchronization control is unnecessary and the optical system can be reduced, so that the control system and the optical system can be further simplified, and the cost can be reduced. Further reduction can be achieved.

The exposure apparatus of the present embodiment can be applied to any of a refractive optical system and a reflective optical system. The effects of the embodiment can be realized highly.

Next, a device manufacturing method using the plasma processing apparatus of the second embodiment and the exposure apparatus of the present embodiment will be described with reference to FIG. First, in step S10, a production substrate (for example, a wafer or a glass substrate) is produced. On the other hand, in parallel with this step S10, a circuit or shape design is performed (step S11).
A reticle is manufactured based on step S11 (step S12).

Next, in step S13, devices (for example, IC, LS) are used by using a plasma processing apparatus, an exposure apparatus, a developing apparatus, an etching apparatus, an annealing apparatus and the like.
I, CCD, FDP, micromachine). After this step S13, as an assembly (post-process),
Cutting, bonding, packaging, casing, and the like are performed (step S14), and a product inspection is further performed (step S15). Then, the product is shipped.

Here, the device creation process (previous process)
Will be described in detail. The device creation process includes the following processes. 1. A process in which a substrate is oxidized and nitrided using a heat treatment furnace or a plasma processing apparatus. 2. A CVD process in which a chemical vapor is grown on a substrate surface by heat or plasma using various source gases to form a film. 3. PVD for forming a film on the substrate surface using heat or plasma
process. 4. An ion implantation process for irradiating the substrate with ionized ions. 5. The process of forming a resist on a substrate. 6. A process of exposing resist on a substrate. 7. The process of developing the resist on the substrate. 8. A process of etching a substrate that has been developed. 9. The process of removing the resist from the etched substrate. These processes 1 to 9 are executed in an order according to the type of device to be created and the like. In the present embodiment, the plasma processing apparatus of the second embodiment is used in processes 1, 2, and 9, and the exposure apparatus of the present embodiment is used in process 6. Note that, in addition to processes 1 to 9, processes such as substrate cleaning and annealing may be added to the device creation process.

Accordingly, in the case where a failure of an apparatus affects the entire production line as in the case of semiconductor production, the number of failures of the apparatus is reduced by performing the device creation process of FIG. It can be improved to improve productivity.

Although the description has been made with respect to only the microwave from the first embodiment to the third embodiment, the first to third embodiments are applied to electromagnetic waves other than the microwave. By doing so, a similar effect can be obtained.

[0082]

As described above, according to the present invention,
The dead space is small, the structure of the device is simple, and the sealing member is protected from electromagnetic waves from microwaves, so that deformation, hardening and breakage of the sealing member can be prevented. Further, it is possible to provide a plasma processing apparatus and an exposure apparatus which realize high cleanliness and have improved durability and safety. Further, it is possible to provide a device manufacturing method in which a device production process is improved and productivity is improved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view schematically illustrating a schematic configuration of a microwave resonator according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view for explaining a variation of the shape of the groove in FIG. 1;

FIG. 3 is a block diagram showing various devices ranging from generation of microwaves to substrate surface treatment using plasma according to an embodiment of the present invention.

FIG. 4 is a schematic diagram illustrating a schematic configuration of a laser light source according to an embodiment of the present invention.

5 is a schematic diagram showing a schematic configuration of an exposure apparatus including the laser light source of FIG.

6 is a flowchart illustrating a device manufacturing method using the plasma processing apparatus of FIG. 3 and the exposure apparatus of FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Microwave resonator 11-13 Dielectric block 14-16 Holding member 19 H-plane antenna 20-22 Sealing member 23 Resonant waveguide (uniform line) 24-26 Termination surface 27 Branch surface 28 Boundary surface 29 Groove 30 Through hole REFERENCE SIGNS LIST 40 plasma processing apparatus 41 plasma chamber 42 microwave generator 50 exposure apparatus 51 laser light source 53 illumination optical system 55 projection optical system 56 wafer chuck 57 wafer stage 58 laser chamber 59 partial reflecting mirror 60 total reflecting mirror 61 reticle 62 wafer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat ゛ (Reference) H01S 3/225 H01L 21/205 5J011 H05H 1/46 21/30 572A // H01L 21/205 514E 21/3065 515B H01S 3/223 E H01L 21/302 B (72) Inventor Toshikuni Shinohara 05 Aoba Aramaki, Aoba-ku, Aoba-ku, Sendai City, Miyagi Prefecture Within the Graduate School of Engineering, Tohoku University (72) Masaki Hirayama Aoba-ku, Sendai-shi, Miyagi Prefecture Aoba Aramaki 05 Graduate School of Engineering, Tohoku University (72) Inventor Kaoru Takehisa 1200 Manda, Hiratsuka-shi, Kanagawa Pref. 2H097 AA03 BA10 CA01 CA13 CA17 LA10 5F004 AA16 BA20 BB14 BB29 BC01 BD01 5F045 AA09 EB02 EB03 EB10 EC05 EH02 EH03 5F046 AA17 CA04 DA01 MA12 MA18 5F071 AA06 DD08 JJ05 JJ10 5J011 DA04 DA05 FA01

Claims (14)

[Claims] 1. An electromagnetic wave transmission device for transmitting an electromagnetic wave along a transmission waveguide extending from a waveguide unit provided on the atmosphere side to a gas atmosphere side, wherein the transmission waveguide is arranged on the atmosphere side, A first dielectric block forming a part of the transmission waveguide; a second dielectric block disposed on the gas atmosphere side and forming a part of the transmission waveguide; A third dielectric block disposed between the first dielectric block and a portion forming a part of the transmission waveguide, and a mounting flange portion; A first holding member for holding and terminating an electromagnetic wave leaking from the transmission waveguide, a second holding member for holding the second dielectric block, and a third dielectric block Flange part and the second Of the sealing means provided between the holding member, which comprises a, when representing the guide wavelength of an electromagnetic wave at lambda _g, the electrical length between the sealing means and the end surface of lambda _g / 4 The electromagnetic wave transmission device according to claim 1, wherein an electric length between the transmission waveguide and the terminal surface is set to an even multiple of λ _g / 4. 2. The electric length between an interface between the first and second holding members and the terminal surface is set to an odd multiple of λ _g / 4. Electromagnetic wave transmission equipment. 3. A second sealing means provided between a flange portion of the third dielectric block and the first holding member, wherein an electrical length between the third dielectric block and the terminal surface is λ _g. 2. The apparatus according to claim 1, further comprising: a second sealing means set to an even multiple of / 4, and a third sealing means provided between the first and second holding members.
Or the electromagnetic wave transmission device according to 2. 4. The electromagnetic wave transmission device according to claim 1, wherein the electromagnetic wave is a microwave. 5. An electromagnetic wave resonance device for resonating an electromagnetic wave with a resonance waveguide extending from a waveguide means provided on the atmosphere side to a gas atmosphere side, wherein the resonance device is arranged on the atmosphere side and includes one of the resonance waveguides. A first dielectric block forming a portion; a second dielectric block disposed on the gas atmosphere side and forming a part of the resonance waveguide; a first dielectric block and the second dielectric block; A third dielectric block disposed between the body block and forming a part of the resonance waveguide, and a third dielectric block having a mounting flange portion; and holding the first dielectric block. A first holding member having a terminating surface for terminating an electromagnetic wave leaking from the resonance waveguide; a second holding member holding the second dielectric block; and a flange portion of the third dielectric block. The second holding And sealing means provided between the members, which comprises a, when representing the guide wavelength of an electromagnetic wave at lambda _g, the electrical length of the resonant waveguide is set to an integral multiple of lambda _g / 2, The electrical length between the sealing means and the termination surface is set to an even multiple of λ _g / 4, and the electrical length between the resonant waveguide and the termination surface is set to an even multiple of λ _g / 4. The electromagnetic wave resonance device is set. 6. An electric length between the boundary surface between the first and second holding members and the terminal surface is set to an odd multiple of λ _g / 4. Electromagnetic resonance device. 7. An electric length between one end surface of the resonance waveguide and the third dielectric block is set to an odd multiple of λ _g / 4, and the other end of the resonance waveguide is provided. The electric length between a surface and the third dielectric block is set to an odd multiple of λ _g / 4.
The electromagnetic wave resonance device according to claim. 8. A second sealing means provided between a flange portion of the third dielectric block and the first holding member, wherein an electrical length between the third dielectric block and the terminal surface is λ _g. 6. The apparatus according to claim 5, further comprising: a second sealing means set to an even multiple of / 4, and a third sealing means provided between the first and second holding members.
The electromagnetic wave resonance device according to any one of claims 1 to 7. 9. The electromagnetic wave resonance device according to claim 5, wherein the electromagnetic wave is a microwave. 10. An electromagnetic wave resonance device according to claim 5, an antenna means for introducing an electromagnetic wave into the electromagnetic wave resonance device, and a substrate which generates plasma by means of the resonated electromagnetic wave and uses the plasma. A plasma processing apparatus, comprising: a plasma chamber for performing a surface treatment. 11. A laser light source that emits a laser, an illumination optical system that illuminates a laser emitted from the laser light source on a reticle on which a desired pattern is formed, and a light that passes through the reticle and is patterned. A projection optical system for forming an image on a substrate, and means for holding and fixing the substrate, wherein the laser light source comprises: an electromagnetic wave resonance device according to any one of claims 5 to 9; Antenna means for introducing an electromagnetic wave into the electromagnetic wave resonance device; a laser chamber for generating plasma by the resonated electromagnetic wave and exciting laser light using the plasma; a resonance system for resonating the laser light before and after the laser chamber An exposure apparatus comprising: 12. An exposure apparatus according to claim 11, wherein said laser light source is an excimer laser light source. 13. A device manufacturing method, comprising a step of performing a surface treatment on a substrate using the plasma processing apparatus according to claim 10. 14. A device manufacturing method comprising a step of performing an exposure process on a substrate using the exposure apparatus according to claim 11.