JP2001284123A - Magnetic thin film, magnetic component provided with the same, their manufacturing method, and electric power converter - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an inexpensive magnetic thin film which is superior in manufacturability, easily manufactured, can be increased in thickness, and has soft magnetic properties, a magnetic part provided with the same, their manufacturing methods, and an electric power converter. SOLUTION: A polyimide film is formed as thick as 10 μm on a silicon board, and a magnetic thin film formed of Fe fine particle-containing polyimide film of thickness 20 μm is formed thereon. A patterned Ti/Au film and a Ti/Au connecting conductor are formed on the magnetic thin film, a polyimide film of thickness 10 μm, and Cu coils each of height 35 μm, width 90 μm, and space 25 μm and a polyimide layer filling a space between the Cu coils are formed thereon. A magnetic thin film such as a polyimide film, that contains Fe fine particles, is formed thereon through the intermediary of a polyimide film of thickness 10 μm. This thin film inductor is small in AC resistance.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic thin film which can be used as a magnetic core of a magnetic component such as a reactor, a transformer and a magnetic head, a magnetic component having the magnetic thin film formed on a semiconductor substrate, a method of manufacturing the same, and a power converter. About.

[0002]

2. Description of the Related Art Conventionally, a magnetic thin film serving as a magnetic core of a magnetic component such as a reactor, a transformer, and a magnetic head is generally manufactured by a method such as sintering, rolling, plating, and sputtering of a magnetic material. Magnetic components require different magnetic properties depending on how they are used. They are roughly classified into hard magnetic characteristics and soft magnetic characteristics. As for the hard magnetic characteristics, the BH characteristics have a square hysteresis and a high coercive force, and a magnetic component having such hard magnetic characteristics includes a magnetic recording medium. The soft magnetic property has a small coercive force in the BH property,
Magnetic components having such soft magnetic characteristics include power supply components such as inductors and transformers that require a small magnetic loss. The magnetic characteristics of the magnetic component used for the power supply component are required to have a high magnetic permeability and a small eddy current loss due to the lines of magnetic force in the magnetic body. for that reason,
A magnetic material forming a magnetic component used for a power supply component is required to have magnetic properties of high electric resistance in addition to high magnetic permeability.

As magnetic characteristics of magnetic components used for power supply components, coercive force (Hc) is 40 mA / m or less, saturation magnetic flux density (Bs) is 1 T or more, and magnetic permeability (μ) is on the order of several thousand (MHz). ) And electric resistance (ρ) are required to be 10 ⁻⁶ / Ωm or more, and magnetic parts formed of a Co-based amorphous magnetic thin film formed by a sputtering method have been put to practical use.

FIGS. 14A and 14B are configuration diagrams of a thin film inductor formed on a silicon substrate by a sputtering method. FIG. 14A is a plan view, and FIG. 14B is a view taken along line AA in FIG. It is sectional drawing which cut | disconnected. This thin film inductor has a thickness of 60 μm.
And a planar spiral coil made of copper (Cu coil 10
4) is sandwiched between Co-based amorphous magnetic thin films 103 and 106 formed by sputtering. In the drawing, a two-turn coil is used. However, the coil is actually used in several turns to several tens of turns. Also, 101 in FIG.
Is a silicon substrate on which ICs and switching elements are formed, 102 is a polyimide film, and 103 is CoHfTaPd.
, 105 is a polyimide film, 106 is CoHf
A TaPd magnetic thin film 107 is a connection conductor for connecting the end of the central portion of the Cu coil 104 to the switching element formed on the silicon substrate 101, and is formed simultaneously when the Cu coil 104 is formed.

FIGS. 15A to 15D show a manufacturing process of a magnetic thin film manufactured by the sputtering method. FIGS. This is a process for manufacturing the thin film inductor of FIG. Silicon substrate 81 on which semiconductor elements such as ICs and switching elements are built
After coating and baking a non-photosensitive polyimide 82 (5 μm thick), a CoHfTaPd film 83 (9 μm thick) is formed by sputtering.
m) (FIG. 2A). Next, a non-photosensitive polyimide 84 (thickness: 5 μm) was applied and baked again, and Ti
/ Au (= 0.5 / 0.1 μm) is formed by sputtering and patterned to form an electrode layer 85 for plating (FIG. 9B). At this time, the connection conductor 90 is formed simultaneously with the formation of the plated electrode layer 85 in order to make electrical connection with the switching element formed on the silicon substrate 81. Next, a photosensitive polyimide film 86 is applied and baked and patterned to form a plating mask (thickness: 30 μm).
Is formed by plating (FIG. 3C). Thereafter, a magnetic thin film 89 of a CoHfTaPd film (thickness: 9 μm) is formed by application / bake of a non-photosensitive polyimide 88 (thickness: 5 μm) by sputtering, thereby completing the process (FIG. 2D). Table 1 shows the characteristics of the inductor thus manufactured.

[0006]

[Table 1]

In this table, as the inductance value L increases, the DC resistance Rdc and the AC resistance Rac decrease,
Excellent inductor characteristics.

When the above-described sintering or rolling is used as a method of manufacturing a magnetic thin film, a high-temperature treatment of about 1000 ° C. is required, so that a semiconductor substrate on which an IC (integrated circuit) or the like is formed is formed. It is difficult to form a magnetic thin film on the surface. When plating is used, it can be manufactured at room temperature, but it is difficult to control the film thickness of the magnetic thin film, so that it is difficult to obtain good magnetic properties. Further, the above-mentioned sputtering method is a method which is very generally employed, but the manufacturing process is complicated and mass productivity is poor. Therefore, the manufacturing cost of a magnetic component using this magnetic thin film also increases. Further, it is difficult to increase the thickness of the film due to the low growth rate in the sputtering method.

Specifically, when a Co-based amorphous magnetic thin film is formed by sputtering, the deposition rate is low (up to 2 μm).
m / h) Considering mass productivity, their film thickness is limited to 9 μm, and is currently practically used at this thickness. Even if mass productivity is neglected, cracking due to film stress occurs if the thickness is further increased. As one of the conventional techniques for forming a magnetic thin film by this sputtering method, a magnetic metal (Fe, Co, FePt, etc.) and an oxide (Al ₂ O _3, etc.) having a large heat of oxide formation are simultaneously sputter-deposited. A technique for forming a magnetic thin film having a structure consisting of metal granules and an insulating non-metal agglomerate surrounding the metal granules is known (H. Fujimori: Scripta Metallu)
rgica et Materialia, 33, 1625 (1995), S. Ohnuma, et
al.: J.Appl.Phys., 79,5130 (1996), Shinsei Kobayashi et al.:Journal of the Japan Society of Applied Magnetics, 20,469 (1996), S.Ohnuma, et al.: JA
ppl.Phys., 85,4574 (1999)).

This magnetic thin film is called a metal-non-metal granular film, and is known to have a higher electric resistance than a normal magnetic thin film and exhibit excellent soft magnetic characteristics in a high frequency band. . Here, a metal-nonmetal granular film is a film in which magnetic metal granules, which are metal particles (magnetic particles such as Fe) coated with a nonmetal film (an insulating film such as an oxide film), are dispersed in a resin or the like. Refers to a film in which the magnetic metal granules are aggregated.

However, also in the case of the magnetic thin film formed as described above, since the sputtering method is used, the manufacturing cost is high, and it is difficult to increase the film thickness.

Further, the conventional magnetic core of a transformer is generally manufactured by a technique such as sintering, rolling, plating, and sputtering of a magnetic material. In sintering and rolling, it is formed into a bulky material by a high temperature treatment of about 1000 ° C., and this type is generally used. Transformers are indispensable as insulated switching power supply components, but there are recent demands for smaller, thinner and lighter weights, and conventional bulky transformers have become a major bottleneck in meeting these demands. Recently, a thin film transformer in which a thin film coil is sandwiched between magnetic thin films has been proposed in place of these bulky ones. FIG. 16 shows a 100 μm thick substrate formed on a silicon substrate.
m is a plan view (a) of the thin film transformer and a cross-sectional view (b) of an AA 'portion thereof, showing a primary side of a copper spiral coil (thickness 30 μm, width 90 μm, interval 5 μm),
The secondary side has a structure sandwiched by a Co-based amorphous magnetic thin film (thickness: 9 μm) formed by a sputtering method (in the figure, a 2-turn coil is used for simplicity, but it is actually used in 16 turns). . FIG. 17 shows a conventional flowchart. Silicon substrate 17 with built-in semiconductor elements
1, a non-photosensitive polyimide 172 (5 μm thick) is applied and baked, and then the CoHfTaPd film 17 is sputtered.
3 (9 μm thick) is formed (FIG. 17a). Next, a non-photosensitive polyimide 174 (thickness: 5 μm) is again applied and baked, a Ti / Au film 175 (= 0.5 / 0.1 μm) is formed by sputtering, and is patterned to form a plating mask (photosensitive polyimide). ) 176 (thickness: 30 μm) is formed and Cu-plated to form a primary coil 177 (FIG. 17c). After that, the process of FIG. 17B is repeated, and the non-photosensitive polyimide 178 (thickness 5 μm), Ti / Au (=
A 0.5 / 0.1 μm) plating electrode layer 179 is formed (FIG. 17d). Further, the step of FIG. 17c is repeated to form a plating mask (photosensitive polyimide) 180 (5 μm in thickness).
After coating and baking, a non-photosensitive polyimide film 182 is formed, a secondary coil 181 is similarly provided, and a CoHfTaPd film 183 (thickness: 9 μm) is formed by a sputtering method to complete (FIG. 17E). Although the electrical connection with the coil is omitted, a contact portion is formed. For convenience, the number of turns of the primary coil and the number of turns of the secondary coil are illustrated as being equal, but when the input / output voltage ratio is changed, the turns can be formed similarly by changing the number of turns. However,
In this conventional composition, since the distance between the magnetic thin films is large (75 μm in the figure), the leakage flux is large, and
Since the interlinkage magnetic flux between the secondary coils is reduced, the magnetic coupling therebetween is weakened, and the output of the primary side is not efficiently transmitted to the secondary side. Therefore, the conventional transformer having this structure generally has low conversion efficiency.

Conventionally, an enameled wire covered with enamel has been known as a conductive wire. Such a coated wire is generally coated with an insulating material so that electrical insulation is maintained even when there is contact between conductors.
However, with the recent miniaturization and high-density mounting of electronic components, a problem of electromagnetic interference has arisen. Since the conventional insulated wire is merely for electrical insulation, mutual interference due to a magnetic field generated by a current flowing through the wire is not avoided. Therefore, such a problem can be avoided if the conductor is covered with a film serving as an electromagnetic shield.

A power conversion device such as a DC-DC converter usually includes discrete components such as a switching element, a rectifier, a capacitor, a control IC, and coils and transformers as magnetic induction components on a printed circuit board made of ceramics or plastic. There is a power supply module formed as a hybrid. The miniaturization of the hybrid power module is MC
Progress has been made with technologies such as M (multi-chip module). However, it is difficult to reduce the size of a magnetic induction component such as a coil and a transformer, and the volume occupied by the magnetic induction component is large. An example in which a magnetic element (coil, transformer) is mounted has also been reported. For example, Japanese Patent Application No. 8-149626 discloses a planar magnetic induction component. However, forming a planar magnetic induction component by a thin film technique on a substrate on which a semiconductor integrated circuit is formed has a problem in that the process becomes complicated and long. Further, when the planar magnetic induction component is formed by a thin film process, the magnetic thin film and the insulating filler are shrunk by the heat treatment, and the stress causes the substrate to be warped, which makes processing difficult.

[0015]

SUMMARY OF THE INVENTION An object of the present invention is to provide an inexpensive magnetic thin film which is excellent in mass productivity, can be easily manufactured, can be made thick, has soft magnetic properties, and a magnetic component using the same. And a power conversion device.

[0016]

In order to achieve the above object, the following contents are implemented. 1) A magnetic thin film in which a resin contains dispersed magnetic fine particles. 2) The magnetic thin film according to the item 1), wherein the magnetic fine particles include at least one metal element selected from Fe, Ni, Co, Mn and Cr. 3) In the item 1) or 2), the resin is a magnetic thin film which is a non-photosensitive resin or a photosensitive resin. 4) In any one of items 1) to 3), the resin is a magnetic thin film made of an organic magnetic polymer. 5) In item 4), the organic magnetic polymer is a magnetic thin film composed of a cross-conjugated polycarbene or a conjugated polymer having polyacetylene and polydiacetylene as a main chain. 6) The magnetic thin film is composed of fine particles having magnetism, and the fine particles are assembled so as to be in contact with each other. 7) The magnetic thin film according to any one of items 1) to 6), wherein the fine particles are composed of magnetic particles and an insulating film covering the magnetic particles. 8) a step of dispersing magnetic fine particles in a medium, a step of applying the medium on an insulating film, and a heat treatment of the medium;
A method of manufacturing a magnetic thin film including a step of solidifying. 9) In the manufacturing method described in 8), the medium is a non-photosensitive resin solution or a photosensitive resin solution. 10) a step of dispersing magnetic fine particles in a medium;
A method for producing a magnetic thin film includes a step of applying the medium on an insulating film and a step of heat-treating and evaporating the medium to remove the medium. 11) In the method according to 10), wherein the medium is toluene. 12) The magnetic thin film according to any one of 1) to 5) as first and second magnetic thin films, a first magnetic thin film formed on a semiconductor substrate via an insulating film, and a first magnetic thin film formed on the first magnetic thin film. A spirally formed thin film conductor, a second resin filled in a gap between the spiral thin film conductors, and a second magnetic thin film formed on the thin film conductor and the second resin. A magnetic component characterized by having 13) A magnetic component in which the second resin is a magnetic thin film according to any one of items 1) to 5). 14) The third and fourth magnetic thin films are made of the magnetic thin film according to the item 6), a third magnetic thin film formed on a semiconductor substrate via an insulating film, and a thin film formed in a spiral shape on the third magnetic thin film. A magnetic device comprising: a conductor; a third magnetic thin film formed in a gap between the spiral thin film conductors; and a fourth magnetic thin film formed on the thin film conductor and the third magnetic thin film. Parts. 15) forming the magnetic thin film according to any one of items 1) to 5) as first and second magnetic thin films, forming the first magnetic thin film on a semiconductor substrate via an insulating film; Forming a spiral thin-film conductor on the magnetic thin film, and filling a gap between the spiral thin-film conductors with a second resin;
Forming a second magnetic thin film on the thin film conductor and the second resin. 16) The manufacturing method according to any one of items 1) to 5), wherein the second resin is a magnetic thin film according to any one of items 1) to 5). 17) forming the third and fourth magnetic thin films on the semiconductor substrate via an insulating film, and forming a spiral thin film conductor on the third magnetic thin film; Forming a third magnetic thin film in a gap between the spiral thin film conductors, and forming a fourth magnetic thin film on the thin film conductor and on the third thin film. This is a method for manufacturing a characteristic magnetic component. 18) The magnetic thin film according to any one of 1) to 5) as a first and a second magnetic thin film, a first magnetic thin film formed on an insulating substrate via an insulating film, and the first magnetic thin film A spirally formed thin film conductor, a second resin filled in a gap between the spirally wound thin film conductors, a second magnetic thin film formed on the thin film conductor and on the second resin, And a magnetic component having: 19) A magnetic component in which the second resin is a magnetic thin film according to any one of items 1) to 5). 20) The magnetic thin film according to item 6) is a third magnetic thin film and a fourth magnetic thin film, and a third magnetic thin film formed on an insulating substrate via an insulating film, and a spiral magnetic film formed on the third magnetic thin film. A thin film conductor, a third magnetic thin film formed in a gap between the spiral thin film conductors, and a fourth magnetic thin film formed on the thin film conductor and the third magnetic thin film. Magnetic parts. 21) The magnetic component is a transformer.
4) A magnetic component according to any of the above. 22) The magnetic component according to any one of items 12) to 14), wherein the magnetic component is a power converter. 23) A conductive wire covered with the magnetic thin film according to any one of items 1) to 7). 24) A magnetic component using the conductor of the item 23) as a winding. 25) A current sensor in which a magnetic sensor is attached to the conductor described in the item 23). 26) The first magnetic thin film, the thin film conductor, and the second
A thin film conductor and an insulating film between the second resin and the second magnetic thin film.
A magnetic component according to any one of items 2) to 14). 27) The thin film conductor and the second resin are formed in two layers via an insulating film.
4) A magnetic component according to any of the above. 28) The magnetic thin film according to any one of items 1) to 7), which is formed on a semiconductor integrated circuit substrate via an insulating film, and the thin film conductor spirally formed on the magnetic thin film; A magnetic component having a second resin filled in the gap between the thin film conductors is mounted on a wiring board, and is resin-sealed with a resin containing magnetic fine particles dispersed therein. Power converter. 29) The magnetic thin film according to any one of the above items 1) to 7) is formed on a semiconductor integrated circuit substrate via an insulating film, and the spirally formed thin film conductor is formed on the magnetic film; A magnetic component having a second resin filled in the gap between the thin film conductors is mounted on a lead frame, and the lead terminal connected to the magnetic component by a thin metal wire, the lead frame, and the magnetic component are magnetic. A power conversion device characterized by being resin-sealed with a resin containing fine particles having a dispersion. 30) The thin film conductor and the second resin are formed in two layers via an insulating film.
9) The power converter according to the item. 31) The power converter according to the above item 28) or 29), wherein an insulating film is formed on the thin film conductor and the second resin.

As described above, by adopting a simple method of dispersing fine particles made of a magnetic material in a medium such as a resin or a solvent, applying the medium, drying and firing, excellent mass productivity can be obtained. It can be easily manufactured and can be made thicker.
A magnetic thin film having soft magnetic properties can be manufactured at low cost. Also, a magnetic component and a power converter using the magnetic thin film can be manufactured at low cost.

[0018]

FIG. 12 is a first conceptual diagram of a magnetic thin film according to the present invention. The magnetic thin film 20 is formed by dispersing magnetic fine particles (magnetic particles 22) made of a magnetic material such as Fe and covered with an insulating film 23 in a medium such as a resin 21 and coating the medium on a semiconductor substrate or an insulating substrate, for example. This is a film formed using a coating method of drying, baking, and drying.
Therefore, this film is made of an aggregate of cell structures in which the magnetic particles 22 are wrapped by the resin 21. The magnetic properties of the magnetic thin film 20 are substantially determined by the physical constants of the magnetic particles 22 dispersed or agglomerated in the resin 21.
Is substantially determined by the electric resistance of the insulating film 23 and the resin 21 surrounding the substrate. Therefore, the electric resistance of the magnetic thin film 20 is a combined resistance of the insulating film 23 and the resin 21 and is high.

The above-mentioned cells having the magnetic particles 22 are easily arranged in one direction or separated by a small magnetic field.
As a result, a magnetic thin film 20 having a small coercive force is obtained. The magnetic flux density is given a basic value by a magnetic material, and the magnetic flux density can be increased substantially in proportion to the cell density. As described above, by using the coating method without using the sputtering method, it is easy to increase the thickness of the magnetic thin film 20, and at the same time, it is possible to form the magnetic thin film 20 with a flat surface regardless of the unevenness of the base.

The magnetic thin film 20 is the above-mentioned metal-nonmetal granular film, and the magnetic grains 22 are surrounded by an insulator as compared with a magnetic thin film formed entirely of a normal magnetic material. In addition, it has a large electric resistance and excellent soft magnetic characteristics in a high frequency band. The magnetic thin film 20 will be further described. 10n diameter
This is a method in which a magnetic material powder of about m is dispersed in a resin such as polyimide and spin-coated, baked (baked), and a solvent component is removed to form a film. Each of the magnetic powders having a diameter of about several tens nm is surrounded by the resin 21.
They are dispersed or aggregated to form a film.

The magnetic material powder need not necessarily be dispersed in a high-viscosity resin such as polyimide. Even when the magnetic material powder is applied in a state of being dispersed in a solvent and the solvent is evaporated and finally the magnetic material powder is agglomerated (FIG. 13), the function can be sufficiently performed. Further, it is more preferable that the magnetic material powder is coated with an oxide film, for example, because even if the magnetic material powder comes into contact with a conductor arranged in the vicinity, it does not cause an electrical short. In the figure, 26 is a magnetic thin film, 27 is a magnetic grain, 28 is an oxide film, and the magnetic grain 27 is
e coated with fine particles.

In any case, the magnetic powder is formed on the substrate by dispersing the magnetic powder in a resin or solvent and applying it to the substrate. Depending on the shape of the substrate, the magnetic powder may be in the form of a layer or a film exhibiting a uniform distribution, or may be filled in, for example, a groove which is a gap between thin film coils. Next, this magnetic thin film and its manufacturing method, and a magnetic component using this magnetic thin film and its manufacturing method will be specifically described.

FIG. 1 is a sectional view of a main part of a magnetic thin film according to a first embodiment of the present invention. This magnetic thin film 4 is formed by surrounding the fine Fe particles with a thin oxide film 3 having a thickness of several nm.
It has a structure in which magnetic particles 2 having a size of 20 nm are dispersed in the polyimide film 1 at intervals of about 100 nm. From another point of view, it can be considered as a magnetic thin film 4 having a structure in which a 20-nm magnetic particle is surrounded by a polyimide having a thickness of about 100 nm (the above-described cells) almost uniformly on the polyimide. The thickness W of the magnetic thin film 4 is several μm.
A range from m to several tens of μm is a practical range for manufacturing a magnetic component. If the magnetic flux density is less than several μm, it is difficult to obtain a magnetic flux density necessary for a magnetic component, and if the magnetic component has a thickness W of several tens μm, sufficient magnetic properties can be obtained.

The diameter L1 of the magnetic particles is from 10 nm to 3
About 0 nm is a practical size. This L1 is 10n
If it is less than m, the cell density becomes too small and the magnetic flux density becomes too small. On the other hand, when the thickness exceeds 30 nm, cells cannot be uniformly dispersed, and it is difficult to obtain uniform magnetic properties over the entire thin film. The distance L2 between the magnetic grains is 0.
It is preferably from nm to several hundred nm. 0 nm is a state in which magnetic particles are in contact with each other, and if it exceeds several 100 nm, the cell density becomes small and the magnetic flux density becomes too small.

FIG. 2 shows a method of manufacturing a magnetic thin film according to a second embodiment of the present invention. Fe as magnetic particles
The surface of which was covered with an oxide film and having an average particle diameter of 20 nm was used. The volume ratio of the oxide film portion occupies approximately 5% of the volume of the whole grain. 100 g of the magnetic particles are mixed with polyimide 1
50 g and 200 g of toluene were mixed. The mixture was mixed with a mixer so that the dispersion was uniform. Hereinafter, the mixer will be described. A sample container 7 containing a solution composed of magnetic particles, polyimide, and a solvent is set at the center where three pairs of electromagnetic coils 8, 9, 10 arranged in three directions of X, Y, Z axes are arranged. The electromagnetic coils 8, 9, and 10 of each pair operate sequentially with a cycle of 3 kHz and a delay of 1 kHz. As a result, the magnetic particles dispersed in the polyimide and the medium serving as the solvent periodically and sequentially form X, X along the magnetic field (48 kA / m) generated by the electromagnetic coils 8, 9, and 10.
Move in Y and Z directions. This operation is continued for about 3 hours, and a dispersion 6 (a medium in which magnetic particles are dispersed) is completed in the sample container 7. This dispersion 6 is, for example, 500
20 rpm on a 6 inch φ silicon substrate at rpm
After coating to a thickness of μm and baking at 300 ° C for about 1 hour,
A magnetic thin film having a structure in which a 20-nm magnetic particle is surrounded by a polyimide having a thickness of about 100 nm and which is substantially uniformly arranged is formed. When the medium is a toluene solution only, a structure in which 20 nm magnetic particles are in contact via an oxide film (FIG. 13).

It should be noted that the method for producing the dispersion shown here is merely an example, and the X, Y, and Z directions may be further subdivided. Thus, the magnetic thin film 4 can be easily formed on the substrate. In other words, the magnetic thin film 4 is excellent in mass productivity, can be made thick, and can be formed at low cost because the process is simple. Further, since the magnetic thin film 4 is a metal-non-metal granular film, it has soft magnetic characteristics.

Next, an embodiment of a thin-film inductor, which is one of the magnetic components using the magnetic thin film 4, and an embodiment of a manufacturing method thereof will be described. FIG. 3 is a sectional view of a thin-film inductor according to a third embodiment of the present invention, to which the magnetic thin film of the first embodiment is applied. In this embodiment, a semiconductor substrate (silicon substrate) on which an IC, a power switching element, and the like are formed
Above is an example of a thin film inductor connected to a power switching element and the like.

On a silicon substrate 31, a polyimide film 32
Is formed with a thickness of 10 μm, and a 20 μm-thick magnetic thin film 33 made of a polyimide film containing Fe fine particles shown in FIG.
Is formed. A polyimide film 34 having a thickness of 10 μm is formed thereon.
Are formed, and a patterned Ti / Au film 41 and a Ti / Au connection conductor 39 are formed on the polyimide film 34. On top of this, a Cu coil 35 having a height of 35 μm, a width of 90 μm, and a space of 25 μm is formed, and a polyimide layer 36 filling the space between the Cu coils 35 is formed. On top of this, a 10 μm thick polyimide film 37
A 20 μm thick magnetic thin film 38 which is a polyimide film containing fine particles is formed. The magnetic thin films 33 and 38 having this structure are the magnetic thin films of FIG. 12 or FIG. This thin film inductor is 4 mm square, and the Cu coil 35 is a square spiral having 16 turns. Table 2 shows the characteristics of the thin film inductor when the method of the present invention is applied.

[0029]

[Table 2]

Since the electric resistance is higher than the characteristics (Table 1) of the conventional Co-based amorphous magnetic film, the eddy current is less likely to flow, and the AC resistance is reduced by the resistance due to the eddy current. . As a result, the AC resistance decreases.

FIG. 4 shows a fourth embodiment of the present invention, in which a method of manufacturing a thin film inductor according to the third embodiment is shown. FIGS. is there.
After a polyimide film 32 having a thickness of 10 μm is formed on a silicon substrate 31 and a magnetic layer 33 having a thickness of 20 μm is formed thereon, an opening 40 reaching the silicon substrate 31 is provided (FIG. 3A). Next, after forming a polyimide film 34 having a thickness of 10 μm thereon and providing an opening connected to the opening 40, a base metal (Ti / Au film 41) and a silicon film for forming a Cu coil 35 by plating are formed. A connection conductor 39 (Ti / Au) connecting the substrate 31 and the Cu coil 35 is sputter-deposited and patterned to form a polyimide 36 serving as a plating mask (FIG. 2B). Thereafter, using the polyimide 36 as a mask, a height of 35 μm and a width of 90 μm
A Cu coil 35 having a thickness of 25 μm and a space of 25 μm is formed, and a polyimide film 37 having a thickness of 10 μm is formed on the Cu coil 35 and a polyimide layer 36 serving as a mask filling a gap between the Cu coils 35. Then, a magnetic layer 38 having a thickness of 20 μm is formed to complete the thin-film inductor (FIG. 3C).

FIG. 5 is a sectional view of a principal part of a thin-film inductor according to a fifth embodiment of the present invention. The difference between this embodiment and the third embodiment is that the plating mask 65 is a photosensitive polyimide film in which magnetic particles are dispersed as shown in FIG. As a result, the structure surrounding the Cu coil 66 with this magnetic medium (a photosensitive polyimide film in which magnetic particles are dispersed) (in the third embodiment, it is only disposed above and below the Cu coil 35, This is advantageous in that a thin-film inductor having a smaller inductance, a higher inductance value and a smaller AC loss (a smaller AC resistance) can be obtained.

A silicon substrate 6 in which a semiconductor element is built
1. A polyimide film 62 is formed on
A magnetic thin film 63 having a thickness of 20 .mu.m in which Fe particles having a particle diameter of 20 nm and the surface of which is covered with an oxide in a non-photosensitive polyimide film is formed, and a Ti / Au film 64 is plated thereon. An electrode and a connection conductor 69 of Ti / Au are formed, and a magnetic thin film in which magnetic grains are dispersed, which is replaced with a normal photosensitive polyimide film, is patterned, and this is used as a plating mask 65 to obtain a 30 μm-thick, 16-turn Cu film. The coil 66 is formed by plating, and a 20 μm-thick magnetic thin film 68 in which Fe particles having a particle diameter of 20 nm and the surface of which is covered with an oxide in a non-photosensitive polyimide is again formed thereon is completed. I do. In the thin-film inductor thus obtained, since the outside of the Cu coil 66 is entirely covered with a resin (magnetic thin film) in which magnetic particles are dispersed, the magnetic flux generated by the current flowing through the Cu coil 66 is tightly coupled. The results in Table 3 also show that the inductance value is large and the AC resistance is small due to the small leakage magnetic flux as compared with the conventional one and the first embodiment.

[0034]

[Table 3]

FIG. 6 shows a sixth embodiment of the present invention, in which a method of manufacturing a thin film inductor according to a fifth embodiment is shown. FIGS. is there.
A polyimide film 62 is formed on a silicon substrate 61 in which a semiconductor element is formed, and a non-photosensitive polyimide whose surface is covered with an oxide having a particle diameter of 20 nm is formed on the polyimide film 62 in the same manner as in the fourth embodiment. 500 particles with Fe particles dispersed
Spin coating and baking at a rotation speed of rpm to form a magnetic thin film 63 having a thickness of 20 μm, and forming thereon a plating electrode of the Ti / Au film 64 and a connection conductor 69 of Ti / Au in the same manner as in the prior art. (FIG. 7A). Next, a photosensitive polyimide in which magnetic particles are dispersed is spin-coated and baked at a rotation speed of 200 rpm, exposed and developed to form a plating mask 65 having a thickness of 30 μm.
A Cu coil 66 having 16 turns was formed (FIG. 2B). On top of this, a non-photosensitive polyimide in which Fe particles having a particle diameter of 20 nm whose surface is covered with an oxide is dispersed and spin-coated and baked at a rotation speed of 500 rpm to obtain a magnetic thin film 68 having a thickness of 20 μm. Is completed (FIG. 3C).

FIG. 7 is a sectional view of a principal part of a thin-film inductor according to a seventh embodiment of the present invention. A polyimide film 72 is formed on a silicon substrate 71 on which a semiconductor element is formed, and an average particle diameter of 20 covered with an oxide film is formed on the polyimide film 72.
As shown in FIG. 13, a 10 μm thick magnetic thin film 73 is formed by agglomeration of Fe fine particles having a thickness of 10 nm, on which a plated electrode of a Ti / Au film 74 and a Ti / Cu connection conductor 79 connected to the silicon substrate 71 are formed. Then, a 16-turn Cu coil 76 having a thickness of 30 μm is formed thereon. A magnetic thin film 78 in which Fe fine particles are aggregated is formed between and on the Cu coils 76 to complete a thin film inductor. Compared to the third and fifth embodiments, there is no resin, and the magnetic coupling is stronger (however, the particles are covered with oxide and are electrically insulated because they are aggregated). As shown in Table 4, a thin film inductor having a high inductance value and a small AC resistance was obtained as compared with the thin film inductor of the fifth embodiment.

[0037]

[Table 4]

FIG. 8 shows an eighth embodiment of the present invention, and shows a method of manufacturing the thin film inductor of the seventh embodiment. FIGS. 8A to 8C are sectional views showing the manufacturing steps in the order of steps. is there.
After brushing a toluene solvent containing Fe fine particles having an average particle diameter of 20 nm covered with an oxide film on a silicon substrate 71 on which a semiconductor element is formed, the solvent is blown off by drying at 100 ° C. (3 minutes). Baking at 250 ° C (15 minutes) to a thickness of 10 µm
A magnetic thin film 73 in which the magnetic grains are condensed as shown in FIG. 13 is formed (FIG. 13A). A Ti / Au film 74 plating electrode and a plating mask 75 are formed thereon, and Cu plating is performed thereon, and a 30-μm thick 16-turn Cu coil 7 is formed.
6 is formed (FIG. 6B). Thereafter, the plating mask is exposed to oxygen plasma to be ashed and removed (may be removed with a solvent). Next, by brushing with toluene solvent containing Fe fine particles in the same manner as at the beginning, drying and baking, a magnetic thin film 78 in which Fe fine particles are aggregated between Cu coils and on it is formed and completed. Figure (c).

In the manner described above, the magnetic thin film portion of a power supply component such as a small and thin reactor or a transformer composed of a conductor coil and a magnetic thin film is coated, dried and fired with a resin or solvent in which magnetic fine particles are dispersed. It can be manufactured in a simple process. In addition, since a formed magnetic thin film having a high electric resistance can be realized, it is possible to simultaneously reduce the manufacturing cost and loss of magnetic components such as a reactor and a transformer.

FIG. 9 is a sectional view showing a main part of a thin-film inductor according to a ninth embodiment of the present invention. The difference from the sixth embodiment is that
Insulating substrate 31a instead of thin film inductor on semiconductor substrate
That is what was formed above.

FIG. 10 is a sectional view showing a principal part of a thin-film inductor according to a tenth embodiment of the present invention. The difference from the seventh embodiment is that the thin film inductor is not provided on the semiconductor substrate but on the insulating substrate 6.
1a.

FIG. 11 is a sectional view showing a principal part of a thin film inductor according to an eleventh embodiment of the present invention. The difference from the eighth embodiment is that the thin film inductor is not provided on the semiconductor substrate but on the insulating substrate 7.
1a. The characteristics of the thin film inductors of these embodiments are the same as those of the above embodiments.

FIG. 18 is a sectional view showing an example of a thin film transformer according to a twelfth embodiment of the present invention. 31 μm height, 90 μm width, space 25 formed on silicon substrate 184
The structure is such that primary and secondary Cu conductor coils 185 of μm are embedded in a polyimide resin mixed with magnetic particles. This thin film transformer is 4 mm square, and the Cu conductor coil is a square spiral having 16 turns. Hereinafter, a method of forming a polyimide resin mixed with magnetic particles applied to the above structure will be specifically described. As the magnetic particles, those having an average particle diameter of 20 nm in which the surface of Fe was covered with an oxide film were used. The volume ratio of the oxide film is 5% of the volume of the whole grain
This is what we occupied below. The method of manufacturing the magnetic particles is the same as in the second embodiment.

FIG. 19 shows a thirteenth embodiment of the present invention, and is a flow chart of the manufacturing process of the thin film transformer of FIG.
As a result, the structure is such that the coil conductor is surrounded by this magnetic medium, and there is a feature that a thin-film transformer having little leakage magnetic flux, tight magnetic coupling between the primary and secondary coils, and low loss is obtained. Hereinafter, the process flow will be described with reference to FIG. Silicon substrate 1 with built-in semiconductor elements
A non-photosensitive polyimide on which Fe particles having a particle diameter of 20 nm and a surface covered with an oxide were dispersed on the surface of No. 91 was 500r
Spin coating and baking at a rotation speed of pm to form a thin film of magnetic resin 192 having a thickness of 5 μm, on which a Ti / Au plated electrode 193 was formed in the same manner as in the prior art (FIG. 19).
a). Next, a magnetic particle dispersion medium changed to photosensitive polyimide was spin-coated and baked at a rotation speed of 200 rpm, and exposed and developed to form a Cu plating coil 195 having a thickness of 30 μm and 16 turns (FIG. 19B). Cu plating coil 19
The magnetic resin 194 was provided between the five spaces. On top of that, a particle size of 20 nm, the surface of which was again covered with an oxide in a non-photosensitive polyimide
The Fe particles dispersed therein were spin-coated and baked at a rotation speed of 500 rpm to form a magnetic resin 196 thin film having a thickness of 5 μm (FIG. 19c). By repeating the above steps, a secondary coil surrounded by the magnetic particle dispersion medium was similarly formed and completed (FIG. 19D). Since the outside of the Cu coil conductor of the transformer thus obtained is entirely covered with the resin in which the magnetic particles are dispersed, the magnetic flux generated by the current flowing through the primary coil conductor and the secondary coil conductor is tightly coupled. The loss resistance becomes smaller due to the smaller leakage magnetic flux as compared with the conventional one.

FIG. 20 is a sectional view of a conductor according to a fourteenth embodiment of the present invention. 10 for copper wire 0.5mm in diameter
The resin shown in FIG. 21 was filled with a resin in which magnetic particles having a thickness of 0 μm were dispersed, and formed by running a copper wire at a constant speed in the resin. The manufacturing method of the magnetic particles is the same as that of the second embodiment. FIG. 22 shows an external view (FIG. 22A) of a coil formed by winding the conductive wire produced in the fourteenth embodiment in a spring shape, and a partial cross-sectional view (FIG. 22B) of the AA ′ plane. In FIG. 22b, ● and ○ indicate Cu conductors, and outer circles 221 surrounding the Cu conductors indicate portions coated with resin. It is a 10-turn coil, and has a cylindrical shape with an outer dimension of approximately 1 mm in diameter and 7 mm in height. FIG. 23 is a cross-sectional view (FIG. 22b) viewed in terms of the generated magnetic field generated by the current flowing through the coil. In FIG.
● indicates that the current flows from the near side to the other side, and ○ indicates that the current flows from the other side to the near side. The coil is buried in the magnetic field in the direction of the arrow shown in FIG. Since the magnetic flux generated by the current flowing through the coil is confined in the resin, mutual electromagnetic interference with an external element is not only avoided but also has a function as a 10-turn micro inductor.

On the other hand, if these elements are closely contacted as shown in FIG. 24 and they are arranged side by side, a transformer having a voltage ratio of 1: 1 is formed of resin. If it is desired to change the voltage ratio, it is sufficient to bring close the contacts having different numbers of turns. The magnetic field generated on the primary side is transmitted to the secondary side via a resin containing magnetic particles, which is the same as a transformer wound around a normal magnetic core. An advantage of the present invention is that the magnetic core, which is conventionally heavy and bulky, can be reduced and its function can be exhibited. In addition, the direction of the line of magnetic force was shown by the arrow in the figure. FIG. 25 shows an example in which the principle of FIG. 24 is applied to a current detection sensor. That is, the covered conductor of the present invention is used as the main circuit conductor, and a part (A part) of the main circuit conductor is made into a tuna winding as shown in FIG. 22, and a tuna to be a sensor part separate from the main circuit beside it. A winding wire (consisting of the conductive wire of the present invention) B was provided as an integral body. As a result, a voltage was generated across B in proportion to the magnitude of the current flowing through the main circuit. That is, by calibrating in advance, the magnitude of the current flowing through the main circuit can be estimated by the voltage generated at both ends of B, and can be used as a current detection sensor. Since as described above the sensor unit B is capable of very small, it is also possible attached to any part for meet demand for small and lightweight.

As described above, the conductor of the present invention not only avoids the mutual interference problem described above, but also has an active and functional role. More specifically, the conductive wire is coated with a magnetic material having an electrical insulation property to provide a function as a magnetic component. The operation of the conductor of the present invention can be exemplified as follows. Since the electrical resistance is limited by the resin surrounding the magnetic fine particles, the resistance of the film itself can be as high as that of the resin, ensuring sufficient electrical insulation and confining the current magnetic field in this film. Therefore, it is possible to prevent electromagnetic interference with an adjacent conductor. Since the same method as the conventional enameled wire can be used,
In practicing the present invention, new equipment is unnecessary and can be manufactured at low cost. With a thin wire such as an enameled wire, any shape can be easily created by winding or bending. It can be. Also,
Since the magnetic properties can be substantially determined by the magnetic fine particles dispersed or agglomerated in the resin, it is easy to manufacture a desired magnetic component. In addition, as the resin, other than polyimide, an enamel resin, a vinyl chloride resin, an epoxy resin, or the like can be used.

FIG. 26 is a sectional view of a power converter according to a fifteenth embodiment of the present invention. 26, 261 is a semiconductor integrated circuit board, 262 is a thin metal wire, 263 is a polyimide insulating film, 264 is a coil conductor (Cu), 266 is a lower magnetic film, 267 is a chip capacitor, 268 is a printed board, and 269 is solder. The ball 271 is a sealing resin containing magnetic particles. The magnetic particles were prepared in the same manner as in the second embodiment. More specifically, a coil conductor 264 (planar coil) is formed on the semiconductor integrated circuit board 261 via the polyimide insulating film 263 by a conventional method up to the upper portion of the polyimide insulating film 263. Next, in the state of being cut out into chips by dicing and mounted on a printed circuit board, the second material is used without using silica which is usually used as a framework material.
Magnetic particles shown in the examples, or particle size 0.1 to 120μ
A molding resin containing about 75 to 85% of magnetic particles or ferrite powder of about m is sealed by a single-sided transfer mold used for BGA or the like, thereby forming a sealing resin 271 containing magnetic particles. After that, other individual components are mounted on a printed circuit board, and the whole is sealed with a conventional sealing resin 270.

Since the magnetic particles of the prior art have a coefficient of thermal expansion about three times as large as that of silica, the stress applied to the silicon substrate increases, adversely affecting the reliability and characteristics, and some models do not satisfy the specifications. However, if a mold resin containing the magnetic thin film of the present invention dispersed in, for example, 25 to 30% is used, the stress applied to the silicon substrate can be reduced.

FIG. 27 is a sectional view of a power converter according to a sixteenth embodiment of the present invention. In FIG. 27, reference numerals are those in FIG.
6, the description is omitted. In the sixteenth embodiment, a planar coil is formed up to the polyimide insulating film 263 as in the fifteenth embodiment. After cutting into chips by dicing, they are fixedly connected to the lead frame 272,
It is connected to the inner lead by a thin metal wire 262. afterwards,
Sealing by transfer molding using a molding resin containing 75 to 85% of a metal magnetic substance powder or ferrite powder having a particle size of about 0.1 to 120 μm without using silica which is generally used as a framework material And DIP / QF
A molded package such as P / QFN is used.

According to the fifteenth and sixteenth embodiments of the present invention, the deposition and etching of the upper magnetic thin film become unnecessary, and it is possible to avoid complication of the manufacturing process. Further, stress due to contraction of the magnetic thin film generated by the heat treatment can be prevented. The magnetic particles may also serve as the skeleton material of the sealing resin. Further, since the upper magnetic thin film is not formed, it is possible to reduce the warpage of the substrate due to the contraction. The stress generated by the conventional structure is 5.8 × 10 ⁶ (dyn /
cm), which results in φ6 inch (thickness of 625 μm)
In the silicon substrate of No. 1, warpage of about 1200 μm occurred. In the fifteenth embodiment, the warpage of the silicon substrate is reduced by 2 /
3 can be reduced. Furthermore, since the side surface of the inductor is covered with the magnetic thin film, the leakage magnetic flux can be reduced.

In the present invention, an organic magnetic polymer having magnetism is selected as a resin for dispersing the magnetic particles so that the magnetic interaction between the magnetic particles is as large as possible, and as a result the magnetic properties of the entire film are enhanced. Is preferred. By doing so, even if the density of the magnetic particles in the resin is lower than that of the polymer without magnetism, the magnetic interaction between the magnetic particles through the polymer is strengthened, and the magnetic particles with the desired magnetic properties are obtained. A particle-dispersed resin is obtained. If the material powder of the magnetic particles is, for example, a magnetic oxide, it does not lead to an electrical short even if it comes into contact with a conductor arranged in the vicinity,
Still preferred.

Specific examples of preferred organic magnetic polymers in the present invention include cross-conjugated polycarbenes and conjugated polymers having a main chain of polyacetylene and polydiacetylene. A cross-conjugated polycarbene can be obtained as follows. A precursor diazo compound represented by the following general formula is synthesized.

[0054]

Embedded image

Next, this precursor is irradiated with UV light,
The following cross-conjugated polycarbene is obtained by performing a photolysis reaction.

[0056]

Embedded image

In the above formula, represents a radical electron having a spin having an open-shell structure, which is generated as a result of dissociation of N ₂ by a photochemical reaction in Chemical formula 1, and this is a source showing magnetism. M can be arbitrarily selected in the order of 10 to 10 ² . For example, it can be 30 or less.

Using this cross-conjugated polycarbene, a magnetic thin film was prepared and analyzed as shown in the second embodiment.
A structure in which a polycarbene having a thickness of approximately 100 nm was surrounded around a magnetic particle having a thickness of 20 nm and arranged almost uniformly. In the above description, a cross-conjugated polycarbene was used, but poly (p-oxyphenylacetylene) shown below can also be used. Polydiacetylene compounds are also useful.

[0059]

Embedded image

For the polymerization of substituted acetylene, an olefin metathesis catalyst (for example, WCl ₆ -SnPh ₄ ) and Fur
The Rh (I) catalyst of Lani et al. is used. In addition,
The method of using the magnetic organic polymer is not particularly limited,
For example, it can be made into a magnetic component by an ordinary method.

Table 5 shows a conventional magnetic film thin-film inductor, a magnetic film thin-film inductor according to the present invention in which fine particles of Fe are dispersed using polyimide as a resin, and a magnetic film in which fine particles of Fe are dispersed using a resin as a cross-conjugated polycarbene. Of poly (p-
This is a characteristic when (oxyphenylacetylene) is used. As is clear from comparison of these tables, the thin film inductor of the magnetic film in which the fine particles of Fe are dispersed shows superior performance in terms of inductance and loss as compared with the conventional one, but the resin is made of polyimide such as polyimide. A magnetic material such as polycarbene has a higher inductance value than a non-magnetic material. This is understood to be a result of an increase in magnetic coupling (interaction) between the Fe fine particles.

[0062]

[Table 5]

[0063]

According to the present invention, an inexpensive magnetic thin film which is excellent in mass productivity, can be easily manufactured, can be made thick, has soft magnetic properties, a magnetic component using the same, a method of manufacturing the same, and A power converter is provided.

[Brief description of the drawings]

FIG. 1 is a sectional view of a main part of a magnetic thin film according to a first embodiment of the present invention.

FIG. 2 is a view illustrating a method for manufacturing a magnetic thin film according to a second embodiment of the present invention;

FIG. 3 is a sectional view of a thin-film inductor to which the magnetic thin film of the first embodiment is applied in a third embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a method of manufacturing a thin-film inductor according to a fourth embodiment of the present invention.

FIG. 5 is a sectional view of a principal part of a thin-film inductor according to a fifth embodiment of the present invention.

FIGS. 6A to 6C are cross-sectional views illustrating a method of manufacturing a thin-film inductor according to a sixth embodiment of the present invention, in which FIGS.

FIG. 7 is a sectional view of a main part of a thin-film inductor according to a seventh embodiment of the present invention.

FIGS. 8A to 8C show a method of manufacturing a thin-film inductor according to an eighth embodiment of the present invention, in which FIGS.

FIG. 9 is a sectional view of a principal part of a thin-film inductor according to a ninth embodiment of the present invention.

FIG. 10 is a sectional view showing a principal part of a thin-film inductor according to a tenth embodiment of the present invention.

FIG. 11 is a sectional view showing a principal part of a thin-film inductor according to an eleventh embodiment of the present invention.

FIG. 12 is a first conceptual diagram of a magnetic thin film of the present invention.

FIG. 13 is a second conceptual diagram of the magnetic thin film of the present invention.

14A and 14B are configuration diagrams of a thin-film inductor formed on a silicon substrate by a sputtering method, wherein FIG. 14A is a plan view and FIG. 14B is a cross-sectional view taken along line AA of FIG.

FIGS. 15A to 15D are cross-sectional views illustrating a manufacturing process of a magnetic thin film manufactured by a sputtering method, in the order of manufacturing processes.

FIG. 16 (a) is a view showing a thickness of 10 formed on a silicon substrate.
FIG. 2 is a plan view of a 0 μm thin film transformer, and FIG.

FIG. 17 is a flowchart of a conventional transformer manufacturing process.

FIG. 18 is a sectional view showing an example of a thin film transformer according to a twelfth embodiment of the present invention.

FIG. 19 is a flowchart of a manufacturing process of the thin-film transformer of FIG. 18 according to a thirteenth embodiment of the present invention;

FIG. 20 is a sectional view of a conductor according to a fourteenth embodiment of the present invention.

FIG. 21 is a view for explaining an apparatus for manufacturing a conductor according to a fourteenth embodiment of the present invention.

FIG. 22 (a) is an external view of a coil formed by winding the conductive wire produced in the fourteenth embodiment into a spring shape, and FIG.
It is a partial sectional view of A 'side.

FIG. 23 is a diagram for explaining a generated magnetic field generated by a current flowing through a coil in FIG. 22;

FIG. 24 is a diagram for explaining a case where coils are closely attached.

FIG. 25 is a diagram illustrating an example in which the principle of FIG. 24 is applied to a current detection sensor.

FIG. 26 is a sectional view of a power converter according to a fifteenth embodiment of the present invention.

FIG. 27 is a sectional view of a power converter according to a sixteenth embodiment of the present invention.

[Explanation of symbols]

1, 32, 34, 36, 37, 62, 72 Polyimide film 2, 22, 27 Magnetic particles 3, 23, 28 Oxide film 4, 20, 26, 33, 38, 63, 68, 73, 78
Magnetic thin film 6 Dispersion liquid 7 Sample container 8, 9, 10 Electromagnetic coil 31, 61, 71, 171, 184, 191 Silicon substrate 31a, 61a, 71a Insulating substrate 35, 66, 76 Cu coil 39, 69, 79 Connection conductor 40 Openings 41, 64, 74, 175, 179 Ti / Au film 65, 75 Plating mask

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Kazumi Takagiwa 1-1, Tanabe-Nitta, Kawasaki-ku, Kawasaki, Kanagawa Prefecture Inside Fuji Electric Co., Ltd. (72) Inventor Yoshitomo Hayashi 1 Tanabe-Nitta, Kawasaki-ku, Kawasaki-shi, Kanagawa Prefecture No. 1 Fuji Electric Co., Ltd. F-term (reference) 5E049 AA01 AA04 AA07 AA10 AC10 BA14 BA16 EB05 EB06

Claims (31)

[Claims] 1. A magnetic thin film, wherein the resin contains dispersed magnetic fine particles. 2. Fine particles having magnetism are Fe, Ni, C
2. The magnetic thin film according to claim 1, comprising at least one metal element selected from o, Mn and Cr. 3. The magnetic thin film according to claim 1, wherein the resin is a non-photosensitive resin or a photosensitive resin. 4. The magnetic thin film according to claim 1, wherein the resin is an organic magnetic polymer. 5. The magnetic thin film according to claim 4, wherein the organic magnetic polymer comprises a cross-conjugated polycarbene or a conjugated polymer having polyacetylene and polydiacetylene as a main chain. 6. A magnetic thin film, wherein the thin film is composed of magnetic fine particles, and the fine particles are assembled so as to be in contact with each other. 7. The magnetic thin film according to claim 1, wherein the fine particles are made of a magnetic particle and an insulating film covering the periphery of the magnetic particle. 8. A method for producing a magnetic thin film, comprising: dispersing magnetic fine particles in a medium; applying the medium on an insulating film; and heat-treating and solidifying the medium. 9. The method according to claim 8, wherein the medium is a non-photosensitive resin solution or a photosensitive resin solution. 10. A method for producing a magnetic thin film, comprising: dispersing magnetic fine particles in a medium; applying the medium on an insulating film; and heat-treating and evaporating the medium to remove the medium. Method. 11. The method according to claim 10, wherein the medium is toluene. 12. A first magnetic thin film formed on a semiconductor substrate via an insulating film, wherein the magnetic thin film according to claim 1 is a first and a second magnetic thin film. (1) A spirally formed thin film conductor on a magnetic thin film, a second resin filled in a gap between the spiral thin film conductors, and a second magnetic material formed on the thin film conductor and on the second resin A magnetic component comprising: a thin film. 13. The magnetic component according to claim 12, wherein the second resin is the magnetic thin film according to any one of claims 1 to 5. 14. The magnetic thin film according to claim 6, wherein the magnetic thin film is a third magnetic thin film and a fourth magnetic thin film, wherein a third magnetic thin film formed on the semiconductor substrate via an insulating film, and a spiral shape on the third magnetic thin film. A third magnetic thin film formed in a gap between the spiral thin film conductors;
And a fourth magnetic thin film formed on the magnetic thin film. 15. A step of forming the magnetic thin film according to claim 1 as first and second magnetic thin films, and forming the first magnetic thin film on a semiconductor substrate via an insulating film; Forming a spiral thin film conductor on the first magnetic thin film, filling a gap between the spiral thin film conductors with a second resin, and forming a second resin on the thin film conductor and the second resin on the second resin.
Forming a magnetic thin film. 16. The method according to claim 15, wherein the second resin is the magnetic thin film according to any one of claims 1 to 5. 17. A step of forming the magnetic thin film according to claim 6 as third and fourth magnetic thin films, forming the third magnetic thin film on a semiconductor substrate via an insulating film, and forming the third magnetic thin film on the third magnetic thin film. A step of forming a spiral thin film conductor, a step of forming a third magnetic thin film in a gap between the spiral thin film conductors, and a step of forming a fourth magnetic thin film on the thin film conductor and on the third thin film And a method of manufacturing a magnetic component. 18. A first magnetic thin film formed on an insulating substrate with an insulating film interposed therebetween, wherein the magnetic thin film according to claim 1 is a first and a second magnetic thin film. 1
A thin-film conductor spirally formed on the magnetic thin film, a second resin filled in a gap between the spiral thin-film conductors, and a second magnetic thin film formed on the thin-film conductor and on the second resin And a magnetic component comprising: 19. The magnetic component according to claim 18, wherein the second resin is the magnetic thin film according to any one of claims 1 to 5. 20. The magnetic thin film according to claim 6, wherein the magnetic thin film is a third magnetic thin film and a fourth magnetic thin film, wherein a third magnetic thin film formed on an insulating substrate via an insulating film, and a spiral shape formed on the third magnetic thin film. And a third magnetic thin film formed in a gap between the spiral thin film conductors, and a fourth magnetic thin film formed on the thin film conductor and the third magnetic thin film. A magnetic component characterized by the following. 21. The magnetic component according to claim 1, wherein the magnetic component is a transformer.
15. The magnetic component according to any one of 2 to 14. 22. The magnetic component according to claim 12, wherein the magnetic component is a power converter. 23. A conducting wire covered with the magnetic thin film according to claim 1. Description: 24. A magnetic component using the conductive wire according to claim 23 as a winding. 25. A current sensor comprising the conductor according to claim 23 and a magnetic sensor attached thereto. 26. An insulating film between the first magnetic thin film and the thin film conductor and the second resin and between the thin film conductor and the second resin and the second magnetic thin film. The magnetic component according to claim 12. 27. The thin film conductor and the second resin,
The magnetic component according to any one of claims 12 to 14, wherein two layers are formed via an insulating film. 28. A thin-film conductor comprising: the magnetic thin film according to claim 1 formed on a semiconductor integrated circuit substrate via an insulating film; and a spirally formed thin-film conductor on the magnetic thin film; A magnetic component having the second resin filled in the gap between the spiral thin-film conductors is mounted on a wiring board, and sealed with a resin containing dispersed magnetic fine particles. A power converter characterized by the above-mentioned. 29. A thin-film conductor comprising: a magnetic thin film according to claim 1 formed on a semiconductor integrated circuit substrate via an insulating film; and a spirally formed thin-film conductor on the magnetic film. A magnetic component having a second resin filled in a gap between the spiral thin film conductors is mounted on a lead frame, and a lead terminal connected to the magnetic component by a thin metal wire; the lead frame; Wherein the resin is sealed with a resin containing dispersed magnetic fine particles. 30. The thin film conductor and the second resin,
30. The power conversion device according to claim 28, wherein two layers are formed with an insulating film interposed therebetween. 31. The power converter according to claim 28, wherein an insulating film is formed on the thin film conductor and the second resin.