JP2001274109A5 - - Google Patents

Claims (8)

The surface temperature of the substrate to be processed is measured with a radiation thermometer, and the output of the heating means having divided heating regions that can be controlled independently of the heated region of the substrate to be processed is controlled according to the measurement result. A heat treatment method for heating a substrate,
A first step of measuring the emissivity and temperature of the surface of the substrate to be processed in-plane with a first radiation thermometer capable of measuring the emissivity and temperature of the surface to be measured, and the first step. A second step of measuring temperatures at a plurality of locations on the surface of the substrate to be processed with a plurality of second radiation thermometers based on the obtained emissivity, a temperature obtained in the first step, and a second step A third step of obtaining an offset value of the second radiation thermometer from the temperature obtained in the step, correcting the temperature measurement value of the second radiation thermometer, and the emissivity obtained in the first step; A fourth step of controlling the output of the heating means while measuring the in-plane temperature distribution of the substrate to be processed using a second radiation thermometer based on the offset value obtained in the third step. A heat treatment method comprising:   When the difference in in-plane temperature of the substrate to be processed before heating is equal to or larger than a predetermined value, the substrate to be processed is heated to a temperature lower than the original heating temperature by the heating means, and the in-plane temperature of the substrate to be processed is made uniform. The heat treatment method according to claim 1.   2. The heat treatment method according to claim 1, wherein a portion where the emissivity and temperature are measured by the first radiation thermometer is equal to a portion where the temperature is measured by the second radiation thermometer.   The emissivity of the surface of the substrate to be processed is obtained at a plurality of points by the first radiation thermometer, and the emissivity at the place where measurement is performed by the second radiation thermometer is obtained by interpolation from the obtained emissivities at the plurality of points. The heat treatment method according to claim 1, wherein the heat treatment method is obtained. The surface temperature of the substrate to be processed is measured with a radiation thermometer, and the output of the heating means having divided heating regions that can be controlled independently of the heated region of the substrate to be processed is controlled according to the measurement result. A heat treatment method for heating a substrate,
The measured for at least two different temperatures the emissivity and temperature of the surface of the different calibration substrate and the target substrate at a first radiation thermometer capable of measuring the emissivity and temperature of the measurement target surface A second step of measuring the temperature of the surface of the calibration substrate with respect to at least two different temperatures with a plurality of second radiation thermometers based on the emissivity obtained in the first step and the first step; The third step of obtaining the offset value and gain value of the second radiation thermometer from the temperature obtained in the first step and the temperature obtained in the second step, and the first radiation thermometer Based on the fourth step of measuring the emissivity of the surface of the substrate to be processed in-plane, the emissivity obtained in the fourth step and the offset value and gain value obtained in the third step, While measuring the in-plane temperature distribution of the substrate to be processed using a second radiation thermometer, Heat treatment method, which comprises a fifth step of controlling the output means.   A heating means for heating the substrate to be processed having a thin film formed on the substrate; a first radiation thermometer for measuring the temperature and emissivity of the thin film; a means for moving the first radiation thermometer; A plurality of second radiation thermometers configured differently from the first radiation thermometer for measuring the in-plane temperature distribution of the thin film based on the emissivity measured by the radiation thermometer of Means for obtaining and correcting the offset value and gain value of the second radiation thermometer from the temperature obtained by the radiation thermometer of 2, and the measurement result by the second radiation thermometer in which the offset value and gain value are corrected And a control means for controlling the output of the heating means.   A heating means for heating the substrate to be processed having a thin film formed on the substrate; a first radiation thermometer for measuring the temperature and emissivity of the thin film; a means for moving the first radiation thermometer; A plurality of second radiation thermometers configured differently from the first radiation thermometer for measuring the in-plane temperature distribution of the thin film based on the emissivity measured by the radiation thermometer of Means for moving the thermometer, means for determining and correcting the offset value and gain value of the second radiation thermometer from the temperatures obtained by the first and second radiation thermometers, and the offset value and gain value And a control means for controlling the output of the heating means based on the corrected measurement result of the second radiation thermometer. The first radiation thermometer is arranged so that the infrared sensor, the center of the visual field area, and the temperature-adjusted black body are on the same optical axis , and each temperature is adjusted to two pairs of infrared sensors and different temperatures. The heat treatment apparatus according to claim 6 or 7, wherein a black body is provided, and the emissivity and temperature of the position are calculated from the measurement result of the same visual field area in each sensor unit.