JP2001272217A - Inspection conditional correction method of pattern inspection system, mask for manufacturing semiconductor, pattern inspection system and recording medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an inspection conditional correction method of a pattern inspection system, which further improves the inspection accuracy. SOLUTION: A scanning is performed on a monitor pattern for measuring the correction values of an optical system, a stage system, and a design data as formed on a photomask to determine the correction value of the optical system from a sensor image data obtained from the scanning. The sensor image data, obtained by the scanning, are compared with a pattern data (design data) for determining the correction value of the stage system. The sensor image data, obtained by the scanning, are compared with the pattern data to determine the correction value of the pattern data. Then, inspection conditions are corrected based on the correction values of the optical system, and the stage system and the pattern data thus obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for correcting inspection conditions of a pattern inspection system, and more particularly to a method for correcting inspection conditions of a system for inspecting a pattern of a mask for semiconductor manufacturing.

[0002]

2. Description of the Related Art A general pattern inspection is performed by irradiating a sample to be inspected with an appropriate light source such as a mercury lamp or a laser oscillation light source, receiving transmitted light by a sensor, and performing signal processing. Depending on the sample to be inspected, it may be appropriate to inspect using a reflection optical system instead of a transmission optical system, or to inspect using both transmission and reflection optical systems.

At this time, in order to inspect using, for example, a transmission optical system, the amount of light in a white portion and the amount of light in a black portion in a normal pattern are measured in advance and stored in an inspection device as device parameters. Then, when an actually inspected pattern has a lightness / darkness error equal to or more than a predetermined value, it is pointed out as a defect.

Further, the optimum position of the optical system focus lens fluctuates depending on the plate thickness of the mask, which is also measured in advance using a reference mask for each plate thickness and stored in an inspection device as device parameters. deep. Then, when actually inspecting, the optimum position is controlled according to the inspection parameters according to the thickness of the mask.

However, in recent inspections of high-definition masks, the influence of fluctuation factors that can be neglected in the conventional inspection accuracy, such as subtle changes in the thickness of each mask and the stability of the light source, is considered. It has been difficult to make stable inspections.

On the other hand, problems such as a slight change in the thickness of each mask and the stability of the light source can be avoided by measuring the light amount of the white portion and the black portion and measuring the optimum focus position for each mask. it can. However, in order to do so, it is necessary in advance for the operator to search the design data for the optimal pattern to measure the various correction values required during pattern inspection, and to mark each of the found optimal patterns. Becomes For this reason, a design data view system for an operator to browse pattern design data is required.

Further, depending on the pattern, a pattern suitable for measuring the correction amount may not be included. In such a case, it is not possible to perform appropriate correction, and high-precision inspection is impossible. there were.

Further, since marking is required, it has been difficult to load a plurality of masks in the apparatus in advance and perform a continuous inspection for automatically processing these masks continuously.

Further, the pattern size slightly changes as it goes through a number of steps such as drawing and etching in the mask manufacturing process. This change is treated as a resize dimension or a corner rounding dimension. The resize dimension is a pattern line width that is thick and thin. The corner rounding dimension is that the corners of the pattern of 90 degrees and 45 degrees are rounded, and there are white corners and black corners depending on whether the transparent portion of the pattern is convex or concave. These dimensions can be calculated in advance according to the drawing conditions and subsequent process conditions. However, in practice, the pattern size is not large enough to match the reference data, and pseudo defects frequently occur, making stable inspection difficult. Can be seen.

An attempt to improve the inspection accuracy of an actual pattern by providing a reference mark on a mask in advance is disclosed in
It is disclosed in Japanese Patent Application No. 3-56702 and functions effectively. However, this disclosure has not been able to solve the method of measuring the light amount of the white portion and the light amount of the black portion for each mask and dealing with the pattern size variation as the resize dimension and the corner rounding dimension. Has been the limit of improving the inspection accuracy.

[0011]

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and a first object of the present invention is to provide an inspection condition correcting method for a pattern inspection system capable of further improving inspection accuracy. To provide.

Another object of the present invention is to provide a semiconductor manufacturing mask used in the above-described inspection condition correcting method.

Another object of the present invention is to provide a pattern inspection system for executing the above-described inspection condition correction method.

A fourth object is to provide a recording medium on which a program for executing the above-described inspection condition correcting method is recorded.

[0015]

In order to achieve the first object, an inspection condition correction method according to the present invention comprises an optical system correction amount, a stage system correction amount, Scanning the monitor pattern for measuring the design data correction amount, and obtaining the optical system correction amount from the sensor data obtained by the scanning, and comparing the sensor data and the design data obtained by the scanning. ,
Calculating the stage system correction amount, comparing the sensor data and the design data obtained by the scanning, and obtaining the design data correction amount, and the obtained optical system correction amount, stage system correction amount, And correcting the inspection condition based on the design data correction amount.

In order to achieve the second object,
The semiconductor manufacturing mask according to the present invention includes a real pattern formed on a substrate and a monitor pattern for measuring an optical system correction amount, a stage system correction amount, and a design data correction amount formed on the substrate. It is characterized by having.

In order to achieve the third object,
A pattern inspection system according to the present invention scans a monitor pattern for measuring an optical system correction amount, a stage system correction amount, and a design data correction amount formed on a sample to be inspected, and obtained by the scanning. Means for obtaining the optical system correction amount from the sensor data, means for comparing the sensor data obtained by the scanning with the design data, and obtaining the stage system correction amount, and the sensor data and the design obtained by the scanning. Means for comparing data with the data to determine the design data correction amount, and means for correcting an inspection condition based on the determined optical system correction amount, stage system correction amount, and design data correction amount. Features.

Further, in order to achieve the fourth object,
The recording medium according to the present invention is obtained by performing a scan of a monitor pattern for measuring an optical system correction amount, a stage system correction amount, and a design data correction amount formed on a sample to be inspected, and the scanning. A step of calculating the optical system correction amount from the obtained sensor data, a step of comparing the sensor data obtained by the scanning with the design data, and a step of calculating the stage system correction amount; and A procedure for comparing the obtained sensor data with the design data, calculating the design data correction amount, and checking the inspection condition based on the obtained optical system correction amount, stage system correction amount, and design data correction amount. The inspection condition correction program including a procedure for executing the correction is recorded.

[0019]

Embodiments of the present invention will be described below with reference to the drawings. In this description, common parts are denoted by common reference numerals throughout the drawings.

(First Embodiment) FIG. 1 is a block diagram showing a pattern inspection apparatus according to a first embodiment of the present invention.

As shown in FIG. 1, a photomask 1 having a pattern formed thereon is mounted on a stage 2. The light source 3 irradiates the photomask 1 with light. The light transmitted through the photomask 1 forms an optical image of a pattern on a sensor 5 via an objective lens 4. The sensor circuit 6 measures an image of the pattern formed on the sensor 5. The data obtained by this measurement is A / D converted and sent to the correction value calculation circuit 7 and the defect determination circuit 8, respectively. Note that depending on the characteristics of the inspection target mask, the sensor 5 may be used instead of the transmitted light but in the reflected light or in a state where the transmitted light and the reflected light are mixed.
May be formed.

On the other hand, the design data of the pattern is
The data is sent to the pattern developing circuit 10 and developed into pattern data. The developed pattern data is supplied to a correction value calculation circuit 7, a resize circuit 11, and a corner rounding circuit 1.
The pattern is then sent to the defect determination circuit 8 after the pattern data corresponding to the change in the pattern caused by the etching process of the pattern formed on the photomask 1 is performed.

The defect judgment circuit 8 compares the pattern image of the photomask 1 sent from the sensor circuit 6 with the pattern data sent from the corner rounding circuit 12 to judge a defect on the photomask 1.

FIG. 2 is a block diagram showing an example of the configuration of the correction value calculation circuit 7 shown in FIG.

As shown in FIG. 2, the correction value calculating circuit 7
Pattern data memory 21, sensor image memory 22, address control circuit 23, data buffer 24, and CP
U25. The pattern data memory 21
Of the pattern data sent from the pattern development circuit 10
This is a memory that can store a certain area. The sensor image memory 22 is a memory that can store a certain area of the A / D converted pattern image sent from the sensor circuit 6. When the photomask 1 is scanned, the memories 21 and 22 store and store the pattern data and the pattern image of the same area in synchronization with each other according to an instruction from the address control circuit 23 and the CPU 25.

Next, a photomask used in the inspection condition correcting method according to the present invention will be described.

FIG. 3A is a plan view showing an example of the photomask 1.

As shown in FIG. 3A, the photomask 1
Is the actual pattern area 31 where the actual pattern is drawn
Having. A monitor pattern 32 is drawn around the actual pattern area 31. An example of the monitor pattern 32 is shown in FIG. The monitor pattern 32 shown in FIG. 3B is formed under the same drawing conditions and process conditions as those of the actual pattern formed in the actual pattern area 31.

The monitor patterns 32 of this embodiment are provided at four corners of the photomask 1 respectively. By arranging the monitor patterns 32 at the four corners of the photomask 1 in this manner, the conventional monitor patterns 32 can be used as alignment marks.

Further, by providing a plurality of monitor patterns 32, even if one monitor pattern 32 has an abnormality such as a pattern defect or dust adhesion, the inspection can be continued with another monitor pattern 32. Can also be obtained.

In this case, for example, the monitor pattern 3
As a result of scanning 2, a control sequence for moving to another monitor pattern 32 when an abnormality is recognized in the monitor pattern 32 may be incorporated.

Hereinafter, an example of a specific method of correcting the inspection condition using the monitor pattern 32 will be sequentially described from the second embodiment.

(Second Embodiment) The second embodiment is different from the first embodiment in that
It is an example of a method of calculating a resize amount.

First, prior to the inspection of the actual pattern, the checkerboard checkerboard pattern (for example, P1
) Is scanned, and the obtained sensor image data is stored and stored in the sensor image memory 22. At the same time, of the pattern data of the monitor pattern 32, the pattern data of the same area as the scanned portion is stored and stored in the pattern data memory 21.

Next, from the data stored in the pattern data memory 21 and the data stored in the sensor image memory 22, data at the same position is read out to the data buffer 24.

Next, as shown in FIG.
The position (XD1, XA1) of the pattern in which the light intensity distribution in the direction becomes equal to or more than a predetermined numerical value and the position (XD2, XA2) of the pattern in which the light intensity distribution becomes equal to or less than the predetermined numerical value are calculated. Then
From each calculated position, the pattern data width (XD1
−XD2) and the sensor image width (XA1−XA2), respectively.

The resizing amount is determined by the pattern data width (XD1-X
D2) and the sensor image width (XA1-XA2), the resizing amount = {(XD1-XD2)-(XA1-XA2)} / 2. The required resize amount is
The data is sent to the computer 9 via the CPU 25.

When the actual pattern formed on the photomask 1 is inspected, the resizing amount obtained is determined by the resizing circuit 11.
The pattern data is corrected based on the resizing amount, and is corrected to a pattern closer to the actual pattern.

(Third Embodiment) The third embodiment is different from the first embodiment in that
It is an example of a calculation method of a corner rounding amount.

First, prior to the inspection of the actual pattern, of the monitor patterns 32, a pattern having corners, for example, a contact hole-like square pattern (for example, P10
) Or a 45-degree pattern (for example, P17) is scanned, and the obtained sensor image data is stored in the sensor image memory 2.
Store and save in 2. At the same time, monitor pattern 3
Among the two pattern data, the pattern data of the same area as the scanned portion is stored and stored in the pattern data memory 21.

Next, the data at the same position is read out to the data buffer 24 from the data stored in the pattern data memory 21 and the data stored in the sensor image memory 22, respectively. FIG. 5A shows pattern data of a 90-degree corner of a rectangular pattern, and FIG. 5B shows sensor image data corresponding to FIG. 5A. FIG. 5C shows pattern data of a 45-degree corner, and FIG. 5D shows sensor image data corresponding to FIG. 5C.

The corner rounding amounts are shown in FIGS.
From the actual sensor image data shown in FIG.
(A), the pattern data shown in FIG. 5 (C) is subtracted, and the corner rounding amount is determined from a preset table based on the value. An existing table can be used as a table for determining the corner rounding amount. The obtained corner rounding amount is sent to the computer 9 via the CPU 25.

When the actual pattern formed on the photomask 1 is inspected, the obtained corner rounding amount is instructed to the corner rounding circuit 12, and the pattern data is corrected based on the corner rounding amount, thereby obtaining a more actual pattern. Corrected to a close pattern.

In the above description, a 90 degree corner and 45
Although the angle corner has been described, in practice, the 90-degree corner has a rotationally deformed shape as shown in the monitor pattern P20, and the 45-degree corner has a state rotated by 90 degrees as shown in the monitor pattern P18. There are also things.
Also, a 135-degree corner actually exists. As described above, it is important to optimally set the corner rounding amount for each corner angle in order to increase the redundancy between the pattern data and the sensor image data, that is, to suppress frequent occurrence of pseudo defects. .

(Fourth Embodiment) The fourth embodiment is a
It is an example of a calculation method of a displacement amount.

Conventionally, prior to the inspection of the actual pattern of the photomask 1, a reference mark (alignment mark) is measured, and the difference between the design value of the distance between marks and the actually measured value is calculated.
Prediction that two-dimensional deformation has occurred is performed to correct the deformation. This correction amount is stored in advance as a positional deviation correction amount of the device parameter,
It is quoted at the time of inspection of each mask, or is measured and calculated at the time of inspection of each mask as a distortion correction amount, and is corrected and calculated.

However, as the inspection standard becomes strict, a uniform correction amount is applied to the entire surface of the photomask 1 and the correction amount is proportionally distributed between the reference marks.
Satisfactory correction has become impossible to achieve.

In the present invention, a monitor pattern 32 shown in FIG. 3B is formed in a portion where the pattern density is locally different, or in a portion requiring particularly high accuracy, and is applied to the entire surface of the photomask 1. A correction amount different from the correction amount to be applied is locally applied, or based on this correction amount,
The entire surface of the photomask 1 is inspected.

First, of the monitor pattern 32 formed near the actual pattern area 31, a checkerboard lattice pattern (for example, P1, P15, etc.) is scanned, and the obtained sensor image data is stored in the sensor image memory 22. Store and save. At the same time, of the pattern data of the monitor pattern 32, the pattern data of the same area as the scanned portion is stored and stored in the pattern data memory 21.

Next, the data at the same position is read out to the data buffer 24 from the data stored in the pattern data memory 21 and the sensor image memory 22, respectively.

Next, as shown in FIG.
The position (XD1, XA1) of the pattern in which the light intensity distribution in the direction becomes equal to or more than a predetermined numerical value and the position (XD2, XA2) of the pattern in which the light intensity distribution becomes equal to or less than the predetermined numerical value are calculated. Then
From the calculated positions, the center position of the pattern data width (XD3: XD3 = (XD1-XD2) / 2) and the center position of the sensor image width (XA3: XA3 = (XA1-XA2) / 2) Ask for each.

The amount of displacement is determined by the center position of the pattern data width (XD3) and the center position of the sensor image width (XA3).
Therefore, the displacement amount can be obtained as: (XD3)-(XA3). The calculated displacement is
The data is sent to the computer 9 via the CPU 25.

When the actual pattern formed on the photomask 1 is inspected, the obtained positional deviation amount is instructed to the stage control circuit 13 and the positional deviation of the stage system is corrected.

In the calculation of the actual displacement amount, the steps of storing the pattern data, storing the sensor image data, and measuring the position of the pattern can be performed in the same procedure as the calculation of the resize amount. Both correction values can be obtained at the same time simply by adding the calculation of the displacement amount to the calculation.

(Fifth Embodiment) The fifth embodiment is characterized in that:
It is an example of an optical system correction method.

The correction of the optical system is performed in two items: focus adjustment and sensor sensitivity correction.

First, the focus adjustment is performed by calculating the focus offset value at the in-focus position.

The sensor sensitivity correction is performed by correcting a variation in the sensitivity of a sensor element such as a line sensor.

The correction of the optical system is performed by performing the following processing immediately before the start of the inspection.

(1) The photomask 1 is loaded on the stage 2.

(2) The stage 2 is moved in the X direction, the Y direction,
The photomask 1 is aligned by moving in the θ direction (rotation).

(3) The stage 2 is moved to adjust the irradiation field to a line and space (hereinafter, L & S) pattern (for example, P4 or the like) of the monitor pattern 32.

(4) The image of the L & S pattern is captured by the sensor 5, for example, a line sensor, while shifting the focus offset value. As a result, as shown in FIG.
The contrast value of the pattern is obtained for each focus offset value. The contrast value is defined by the magnitude of the amplitude of the line sensor signal value, as shown in FIG. The focal point is when the amplitude is maximum. Then, the focus offset value at this time is calculated as the focus offset value at the in-focus position.

(5) The stage 2 is moved to adjust the irradiation field to the black pattern of the monitor pattern 32 (for example, P28).

(6) An image of the black pattern is captured by the sensor 5, for example, a line sensor. Thus, a black sensor signal is obtained as shown in FIG. Next, the offset value of each sensor element is calculated, and the obtained offset value is set for each sensor.

(7) The stage 2 is moved to adjust the irradiation field to the white pattern of the monitor pattern 32 (for example, P27).

(8) An image of a white pattern is captured by the sensor 5, for example, a line sensor. Thus, a white sensor signal is obtained as shown in FIG. Next, the gain value of each sensor element is calculated, and the obtained gain value is set for each sensor.

As described above, the optical system is corrected. Particularly, since the sensor sensitivity correction is performed for each sensor element, more accurate correction is possible.

In order to execute the correction method described in the second to fifth embodiments, an apparatus for performing each correction process is installed as a hardware in an inspection apparatus or as an inspection control program. Is possible.

Next, an example of such an inspection control program will be described as a sixth embodiment.

(Sixth Embodiment) FIG. 10 is a flowchart showing an example of an inspection control program according to a sixth embodiment of the present invention.

As shown in FIG. 10, the inspection control program includes correction of an optical system, correction of a stage system, correction of pattern data, and inspection.

In this example, the optical system is corrected first.

First, in ST. At 1, the monitor pattern is scanned. Specifically, as described in the fifth embodiment, an L & S pattern, a black pattern, and a white pattern among the monitor patterns are scanned.

Next, ST. In 2, the optical system correction amount is calculated. More specifically, as described in the fifth embodiment, the focus offset value is calculated from the amplitude of the line sensor signal value when the L & S pattern is received, and the level of the line sensor signal value when the black pattern is received. And the gain value is calculated from the level of the line sensor signal value when a white pattern is received.

In these processes, the focus offset value, the offset value, and the gain value may be sequentially calculated after scanning all of the L & S pattern, the black pattern, and the white pattern. May be done.

Next, ST. In 3, the optical system is corrected based on the obtained optical system correction amount.

Next, the stage system and the pattern data are corrected.

First, in ST. At 4, the monitor pattern is scanned. Specifically, as described in the second to fourth embodiments, a checkerboard checkerboard pattern, a 90-degree corner pattern, and a 45-degree corner pattern among the monitor patterns are scanned.

At the same time, ST. In 5,
The pattern data corresponding to each pattern is loaded from the pattern data.

Next, ST. At 6, the position shift amount is calculated. More specifically, as described in the fourth embodiment, the position shift amount is determined based on the shift between the center position of the sensor image data of the checkered lattice pattern and the center position of the pattern data (design data) of the pattern. Is calculated.

Next, ST. In step 7, the stage system is corrected based on the obtained positional deviation amount.

Next, ST. At 8, the pattern data correction amount is calculated. Specifically, as described in the second and third embodiments, the resizing is performed based on the difference between the width of the sensor image data of the checkerboard lattice pattern and the width of the pattern data (design data) of the same pattern. Calculate the amount. The corner rounding amount is calculated based on the difference between the sensor image data of the 90-degree corner pattern or the 45-degree corner pattern and the pattern data (design data) of the same pattern.

Then, at ST. In step 9, the pattern data (design data) is corrected based on the obtained pattern data correction amount.

By these processes, the pattern inspection apparatus,
Alternatively, the inspection conditions of the system are corrected according to the photomask to be inspected.

These optical system correction, stage system correction,
After the correction of the pattern data and the correction of the pattern data, a photomask inspection is performed.

This inspection is performed according to ST. 3 and ST. 7, the actual pattern formed on the photomask is imaged by the sensor using the inspection apparatus corrected in ST.7 (ST.10), and the obtained sensor image is displayed in ST.10. Then, it is checked whether there is any abnormality such as a pattern failure while comparing the pattern data corrected in step 9 (ST. 11). After this inspection, the presence or absence of a defect is determined (ST.12).

ST. 12, the “defective (YE
S) ", the photomask is determined to be defective (NG), and is not actually used or sent to a repair process.

On the other hand, when it is determined that there is no defect (NO), this photomask is determined to be good (GOOD) and can be actually used in a semiconductor manufacturing line. FD, CD, D
It is recorded on a recording medium such as a VD and read by a host computer that controls the inspection device. With this configuration, the inspection condition correction method of the present invention can be implemented with an existing inspection device without any significant improvement so that the inspection device can support the inspection condition correction method of the present invention. Can be.

[0090]

As described above, according to the present invention, an inspection condition correction method for a pattern inspection apparatus capable of further improving inspection accuracy, and a semiconductor manufacturing mask used in the inspection condition correction method In addition, it is possible to provide a pattern inspection system that executes the above-described inspection condition correction method, and a recording medium that records a program that executes the above-described inspection condition correction method.

[Brief description of the drawings]

FIG. 1 is a block diagram showing a pattern inspection apparatus according to a first embodiment of the present invention.

FIG. 2 is a block diagram of a correction value calculation circuit shown in FIG. 1;

FIG. 3A is a plan view of a photomask, and FIG.
(B) is a diagram showing a monitor pattern.

FIG. 4 is a diagram showing a light intensity distribution.

5A is a diagram showing pattern data of a 90-degree corner, FIG. 5B is a diagram showing sensor image data corresponding to FIG. 5A, and FIG. FIG. 5D is a diagram showing sensor image data corresponding to FIG. 5C.

FIG. 6 is a diagram showing a light intensity distribution.

FIG. 7 is a diagram illustrating a relationship between a contrast value and a focus offset value of an L & S pattern.

FIG. 8 is a diagram showing a line sensor signal value (L & S pattern).

9A is a diagram showing a line sensor signal value (black pattern), and FIG. 9B is a diagram showing a line sensor signal value (white pattern).

FIG. 10 is a flowchart showing an inspection control program according to a sixth embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Photomask, 2 ... Stage, 3 ... Light source, 4 ... Objective lens, 5 ... Sensor, 6 ... Sensor circuit, 7 ... Correction value calculation circuit, 8 ... Defect judgment circuit, 9 ... Computer, 10 ... Pattern development circuit, 11: resize circuit, 12: corner rounding circuit, 13: stage control circuit, 21: pattern data memory, 22: sensor image memory, 23: address control circuit, 24: data buffer, 25: CPU.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Toshiyuki Watanabe 1st Toshiba R & D Center, Komukai-ku, Kawasaki City, Kanagawa Prefecture (72) Inventor Hideo Tsuchiya Toshiba Komukai, Koyuki-ku, Kawasaki City, Kanagawa Prefecture 1-cho, Toshiba R & D Center, F-term (reference) 2G051 AA56 AB07 AC04 CB02 CD10 EA24 4M106 AA09 BA04 CA39 DB04 DB20 DJ19 DJ31

Claims (10)

[Claims] A step of scanning a monitor pattern for measuring an optical system correction amount, a stage system correction amount, and a design data correction amount formed on the sample to be inspected; Calculating the optical system correction amount; comparing the sensor data obtained by the scanning with the design data; obtaining the stage system correction amount; comparing the sensor data obtained by the scanning with the design data A step of obtaining the design data correction amount; and a step of correcting an inspection condition based on the obtained optical system correction amount, stage system correction amount, and design data correction amount. Inspection condition correction method for inspection system. 2. The monitor pattern includes a pattern for measuring a sensor sensitivity, a pattern for measuring an optimum focus value, a pattern for measuring a displacement amount, a pattern for measuring a resize amount, and a pattern for measuring a corner rounding amount. The method according to claim 1, wherein the inspection condition is corrected. 3. The inspection condition correcting method for a pattern inspection system according to claim 1, wherein a plurality of said monitor patterns are provided on said sample to be inspected. 4. The method according to claim 1, wherein the sample to be inspected is a mask for manufacturing a semiconductor. 5. An actual pattern formed on a substrate, and a monitor pattern formed on the substrate for measuring an optical system correction amount, a stage system correction amount, and a design data correction amount. Semiconductor manufacturing mask. 6. The monitor pattern includes a pattern for measuring a sensor sensitivity, a pattern for measuring an optimum focus value, a pattern for measuring a displacement amount, a pattern for measuring a resize amount, and a pattern for measuring a corner rounding amount. The mask for manufacturing a semiconductor according to claim 5, wherein: 7. The semiconductor manufacturing mask according to claim 5, wherein a plurality of said monitor patterns are provided on said substrate. 8. The design rule of the monitor pattern,
8. The semiconductor manufacturing mask according to claim 5, wherein the design rule is the same as the design rule of the actual pattern. 9. A means for scanning a monitor pattern for measuring an optical system correction amount, a stage system correction amount, and a design data correction amount formed on a sample to be inspected, and from sensor data obtained by the scanning, Means for obtaining the optical system correction amount; comparing the sensor data obtained by the scanning with the design data; and means for obtaining the stage system correction amount; comparing the sensor data and the design data obtained by the scanning And a means for calculating the design data correction amount, and a means for correcting an inspection condition based on the obtained optical system correction amount, stage system correction amount, and design data correction amount. Inspection system. 10. A procedure for scanning a monitor pattern for measuring an optical system correction amount, a stage system correction amount, and a design data correction amount, which is formed on a sample to be inspected, and from sensor data obtained by the scanning, Calculating the optical system correction amount; comparing the sensor data and the design data obtained by the scanning; and calculating the stage system correction amount; and the sensor data and the design data obtained by the scanning. Comparing the design data correction amount, and correcting the inspection condition based on the determined optical system correction amount, stage system correction amount, and design data correction amount. A recording medium on which a program for correcting conditions is recorded.