JP2001261500A - Substrate for epitaxial growth and method for producing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate for epitaxial growth, which has an AlxGayInzN (x+y+z=1; x, y, z>=0) film being reduced in dislocation density and is capable of epitaxially growing an AlxGayInzN (x+y+z=1; x, y, z>=0) film having good characteristics on the formed film and to provide a method for efficiently producing such substrate for the epitaxial growth. SOLUTION: The AlxGayInzN film 27 is formed by forming striped grooves 24 or a striped metal film 31 in the back side 21b of a sapphire substrate body 21 by etching and then introducing the sapphire substrate body 21 into a CVD chamber 25 so that the back side 21b of the sapphire substrate body 21 is brought into contact with a heater. In this film forming process, the temperature at the striped areas having a pattern related to the striped pattern of the grooves 24 or the striped metal film 31 formed in the back side 21b of the sapphire substrate body 21 is selectively raised, and thereby the dislocation density at the surfaces of these areas is made extremely low.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to sapphire, SiC,
A substrate body such as _{GaN, Al x Ga y In z} N (x + y + z = 1 , which is formed on one surface of the substrate main body,
(x, y, z ≧ 0) film and a method for manufacturing the same.

[0002]

2. Description of the Related Art The above-mentioned substrate for epitaxial growth comprises:
Light emitting diode (LED), laser diode (L
D), in the pn junction devices such as field effect transistors _{(FET), Al x Ga y} In z N (x + y + z = 1 by epitaxial growth thereon, x, y, z ≧
0) Used as a substrate for forming a film. Since such Al x _Ga y _In z _N band gap larger, when used in the light-emitting element can emit short wavelength light.

[0003] FIG._xGa_yIn_zN (x + y +
z = 1, x, y, z ≧ 0) Generates blue light using a film
It is sectional drawing which shows the structure of an example of a light emitting diode. example
For example, C-plane sapphire (Al₂O₃Buff on the surface
GaN film 2 acting as an active layer is formed by low-temperature CVD
Then, n-type Al is formed on the GaN film 2._xGa_yIn_z
An N film 3 is formed by CVD epitaxial growth;
On top of this, p-type Al_xGa_yIn_zThe N film 4 is formed by CVD.
It is formed by the epitaxial growth.
_xGa_yIn_zLow resistance p-type Al on N film 4_xGa_y
In _zN film 5 is also formed by epitaxial growth of CVD.
Is formed. n-type Al _xGa_yIn_zTable of N film 3
Plane and p-type Al_xGa_yIn_zThe surface of the N film 5 has
Electrodes 6 and 7 are formed respectively. Of each of these layers
The composition is appropriately selected according to the emission wavelength of the device.
You.

[0004] In producing such a light-emitting diode, the n-type on a sapphire substrate 1 _Al x Ga _{y
If the} InzN film 3 is epitaxially grown by direct CVD, the GaN film has many defects, poor crystallinity, and poor surface flatness. In such _Al x _Ga y In _z N film 3 light emitting diode using the luminous efficiency becomes extremely low.

Therefore, as shown in FIG.
N-type Al on the surface of plate 1 _xGa_yIn_zForm N film 3 directly
The GaN film 2 acting as a buffer layer without forming
It is formed by epitaxial growth of VD. This
In epitaxial growth by low-temperature CVD, such as
Lattice constant of the via substrate 1 and n-type Al_xGa_yIn_z
When a difference of 10% or more from the lattice constant of the N film 3 is compensated for
Both achieve good surface flatness, which is important at heterojunctions.
Can appear. Instead of such a GaN film 2, an AlN film is used.
It can be formed by low temperature CVD epitaxial growth.
Proposed.

However, such a low-temperature CVD epitaxial growth causes G to act as a buffer layer.
forming a aN film 2 and the AlN film, _Al x _Ga y I thereon
When the _nzN film 3 is epitaxially grown, the number of dislocations becomes extremely large. The dislocation density of the conventional _Al x _Ga y In _z N film is, for example, but also reach ^{10 10} / cm ^2.
When the dislocation density is high as described above, this constitutes a non-emission center of light, so that device characteristics are degraded.
In particular, this is a serious problem in an optical device such as a laser diode that requires high efficiency. In addition, such dislocations cause deterioration of the pn junction, so that reduction of the dislocations becomes a serious problem even when manufacturing an electronic device.

[0007]

In order to solve the above-mentioned problem of high dislocation density, the use of the selective lateral growth technique is described in "Applied Physics" Vol. 68, No. 7, 774-77.
It is described on page 9. However, those described in the literature, is the case of epitaxially growing a GaN film on a sapphire substrate body, this technique Al _x Ga _y
The method was also applied to the case of forming an In _z N (x + y + z = 1, x, y, z ≧ 0) film, and the method was studied. In this method, as shown in FIG. 2A, a GaN film 12 is formed on one surface of a sapphire
After epitaxial growth to a thickness of μm, this GaN
Stripe mask 1 made of SiN on the surface of film 12
3 was formed, _Al x thereon _{Ga y In z N (x +} y +
(z = 1, x, y, z ≧ 0) The film 14 is epitaxially grown.

Here, when the epitaxial growth on the GaN film 12 is compared with the epitaxial growth on the mask 13, the lateral growth rate on the mask 13 depends on the underlayer dependence of the epitaxial growth. Since it is much higher than the vertical growth rate, selective lateral growth is performed. Accordingly, _Al by CVD x _Ga y In _z If the N layer 14 is epitaxially grown, _Al x was deposited on the mask 13 _Ga y In _z
N is laterally grown as eaves, before _Al x _Ga y In _z N deposited from the surface of the GaN film 12, to merge with the _Al x _Ga y In _z N that is deposited on the mask 13, _Al x _Ga y in from adjacent the mask 13 is grown in the lateral direction
_zN comrades are joined. FIG. 2b illustrates such a situation.

[0009] By such selective lateral growth, Al _x
When forming a Ga y _In z _N film 14, dislocations present on the surface of the GaN film 12, as shown by the arrows in FIG. 2c, bent laterally, runs in a plane parallel to the direction of the mask 13, the mask Will be gathered above. As a _result, Al x _Ga y In _z N-film 14, sequentially in the mask 13
In the region W near the center of the region, the dislocations are concentrated and the dislocation density becomes high. Above the mask 13, there is no threading dislocation that progresses in the vertical direction, so that the dislocation hardly increases with the growth. However, there are some dislocations in the center of the mask where the laterally grown films are bonded from both sides.
When such growth is performed, the dislocation density is low in the region W from near the side edge of the mask 13 to near the center of the mask. The dislocation density in this region W is typically as low as 10 ⁷ / cm ² . Therefore, if the light emitting element as shown in FIG. 1 is formed in the region W where the dislocation density is low, a device having good characteristics can be obtained.

However, in the conventional method described above,
After introducing the sapphire substrate body 11 into a CVD apparatus and forming a GaN film 12 on the surface thereof, the sapphire substrate body 1
1 is removed from the CVD apparatus, a stripe-shaped mask 13 is formed by using a photolithography technique, and the sapphire substrate body 11 is again introduced into the CVD apparatus, and Al _x
So that the formation of the Ga _y In _z N film 14. Thus, after forming the GaN film 12 by introducing a sapphire substrate main body 11 in the CVD apparatus, once taken out from the CVD apparatus to form a mask 13, then introduced again into the CVD apparatus _Al x _Ga y In _z Since the N film 14 is formed, the operation procedure becomes complicated, and there is a problem that a substrate for epitaxial growth cannot be efficiently manufactured.

Further, GaN acting as a buffer layer
In the step of forming the mask 13 after forming the film 12,
There is also a problem that impurities are mixed into the GaN film to deteriorate the characteristics.

The above tendency is observed not only when a sapphire substrate is used but also when a SiC substrate or a GaN substrate is used. As described above, in the related art, the dislocation density is low, and Al _x G having good characteristics is obtained.
_{a y In z N (x +} y + z = 1, x, y, z ≧ 0) film has a problem that it is impossible to efficiently manufacture an epitaxial growth substrate having a surface.

Accordingly, an object of the present invention is to provide a sapphire
Dislocation density on a substrate, SiC substrate, GaN substrate, etc.
Al with low and good properties_xGa_yIn_zShow N film
Surface and good epitaxial growth on it
Al with properties _xGa_yIn_zN (x + y + z = 1,
x, y, z ≧ 0) epitaxy that can form a film
The purpose of the present invention is to provide a cell growth substrate.

Another object of the present invention is to provide a sapphire substrate,
iC substrate, on such a GaN substrate, the dislocation density is _{low, Al x Ga y In z N} (x + y + z having good properties =
It is an object of the present invention to provide a method for efficiently manufacturing a substrate for epitaxial growth having a (1, x, y, z ≧ 0) film on the surface.

[0015]

A substrate for epitaxial growth according to the present invention is formed by epitaxially depositing a substrate body of sapphire, SiC, GaN, or the like having a stripe-shaped groove on the back surface, and selective lateral growth on the surface of the substrate body. _{, Al x Ga y in z N} (x + y + z having a small area of the dislocation density formed in accordance with a stripe pattern that is associated with the pattern of the stripe-shaped groove =
1, x, y, z ≧ 0) film.

Further, the substrate for epitaxial growth according to the present invention comprises a substrate main body of sapphire, SiC, GaN or the like having a striped metal film on the back surface, and epitaxially deposited by selective lateral growth on the surface of the substrate main body. _{Al x Ga y in z N (} x + y + z having a small area of the dislocation density formed in accordance with a stripe pattern that is associated with the pattern shaped for the metal film =
1, x, y, z ≧ 0) film.

Further, in the method of manufacturing a substrate for epitaxial growth according to the present invention, a stripe-shaped groove is formed on the back surface of a substrate body such as sapphire, SiC, or GaN. by epitaxial lateral overgrowth _{Al x Ga y In z N (} x + y + z =
(1, x, y, z ≧ 0) film is epitaxially deposited, and a region having a low dislocation density is formed according to a stripe pattern related to the stripe-shaped groove pattern.

Further, in the method of manufacturing a substrate for epitaxial growth according to the present invention, a stripe-shaped metal film is formed on the back surface of a substrate body such as sapphire, SiC, GaN, etc. _{, Al x Ga y In z N} (x + y by epitaxial lateral overgrowth +
(z = 1, x, y, z ≧ 0) film is epitaxially deposited, and a region having a low dislocation density is formed according to a stripe pattern related to the pattern of the stripe-shaped metal film.

According to the method for manufacturing a substrate for epitaxial growth according to the present invention, a plurality of stripe-shaped grooves and a metal film are formed on the back surface of the base body, and the substrate is heated by a heater from the back surface. The surface has a temperature distribution corresponding to the pattern of the grooves and the metal film. That is, when the back surface groove of the base body is formed, since the heat conduction does not occur in the groove portion, the temperature of the surface portion corresponding to the groove becomes lower than the temperature of the other portions, and the metal film is formed on the back surface of the base body. When the metal film is formed, the metal film absorbs infrared rays and is heated by radiant heat. Therefore, the temperature of the portion corresponding to the metal film increases, and the temperature of the other portions decreases. As a result, the lateral growth rate can be selectively changed in the plane of the substrate, and the direction of the dislocation can be controlled. Therefore, the density of the dislocation density appears according to the groove pattern on the back surface of the base body or the stripe pattern related to the stripe pattern of the metal film,
A portion having a low dislocation density can be realized. Further, by appropriately selecting the film forming conditions, it is possible to select a portion where dislocations are concentrated.

Further, since the epitaxially grown by Al x _Ga y _In z _N film epitaxial lateral overgrowth by introducing base body formed in advance grooves or a metal film in a CVD apparatus, the manufacturing process becomes simple, improve the production efficiency Is done.

Further, the epitaxially grown Al _x
Ga _y In _z N film, since it is formed on the planar surface of the substrate main body, it is favorable properties, it is possible to form a good _Al x _Ga y In _z N film also properties thereon A substrate for epitaxial growth can be provided.

[0022]

FIG. 3 is a sectional view showing sequential steps of manufacturing an embodiment of an epitaxial growth substrate according to the present invention. First, as shown in FIG. 3A, a photoresist is applied to one surface 21b of the C-plane sapphire substrate main body 21 (hereinafter referred to as the back surface, and the other surface is referred to as the front surface 21a). Then, an opening 23 is formed in the photoresist 22 by photolithography. For example, the width of the opening 23 can be set to approximately 5 μm, and the interval between successive openings can be set to approximately 5 μm.

Next, as shown in FIG. 3B, the sapphire substrate body 2 under the photoresist 22 is used as a mask.
After selectively etching 1 to form a plurality of grooves 24, the photoresist 22 is removed. Since these grooves 24 extend in parallel with each other at equal intervals, they become stripe-shaped grooves. The etching of the sapphire substrate body 21 can be performed by dry etching such as ion beam etching, for example, but can also be performed by wet etching. The width of the groove 24 is determined by the width of the opening 23 formed in the photoresist 22, and the depth is determined by the etching time.

The sapphire substrate main body 21 in which the plurality of grooves 24 are formed in the back surface 21b in a stripe pattern as shown in FIG.
As shown in FIG. 3C, the wafer 2 is introduced into the CVD apparatus 25.
6 is placed on the heater so as to make contact with the heater 6. The sapphire base body 21 is heated by the heater 26, and the heating is performed by heat conduction due to contact, heat conduction through the atmosphere inside the CVD apparatus 25, and radiant heat, but by heat conduction and radiation through the atmosphere. The heating is very small especially when a film is formed by using a sapphire substrate, which is a transparent substrate, by flowing a large flow of gas, and most of the heating is due to heat conduction by contact. In this example, the portion where the groove 24 is formed does not come into contact with the heater 26, so that direct heat transfer from the heater does not efficiently occur. Therefore, the temperature distribution on the surface 21a of the sapphire base body 21 is as shown in FIG.

[0025] Thus by selective lateral growth on the surface of the sapphire substrate body _{21, Al x Ga y In z} N (x + y
+ Z = 1, x, y, z ≧ 0) When the film 27 is formed by epitaxial growth while appropriately selecting film forming conditions, for example, as shown in FIG.
In the high temperature region between the portions corresponding to the grooves 24 of FIG. 1a, the lateral growth is promoted, and in the low temperature portions corresponding to the grooves 24, the lateral growth is suppressed, so that the selective lateral growth occurs. Of course, it is possible to use the formation of the buffer layer in combination with the film formation. Therefore, the moving direction of the dislocation is bent as indicated by an arrow along with the growth in the lateral direction of the Al x _Ga y _In z _N film 27 in the region between the portion corresponding to the groove 24, to move laterally become. On the other hand, groove 2
Dislocations caused by the growth of the _Al x _Ga y In _z N film 26 at a portion corresponding to 4 will not be moved laterally.

[0026] Thus, the grooves 24 in the _Al x _Ga y In _z N film 27 is formed on the surface 21a of the sapphire substrate body 21, which took place the lateral growth as described above
In the region W extending from the vicinity of the portion corresponding to the side edge to the vicinity of the portion corresponding to the center of the groove, the dislocation does not progress in the growth direction, and the dislocation density becomes very small. For example, the dislocation density on the surface 21a of the sapphire substrate body 21 is approximately 1
In the case of 0 ¹⁰ / cm ² , the dislocation density on the surface of the above-described region W is reduced to approximately 10 ⁷ / cm ² or less.

[0027] Thus, _Al x Ga _y having between portions corresponding to successive grooves 24 a region W where the dislocation density is reduced
_{In z N (x + y +} z = 1, x, y, z ≧ 0) Al x on the film _{27 Ga y In z N (x} + y + z = 1, x, y,
z ≧ 0) By sequentially epitaxially growing the films,
For example, a light emitting element as shown in FIG. 1 can be formed. In this case, in the region W, since the dislocation density is low, an undesired non-emission center is not formed, and the emission efficiency is high.

In this example, as shown in FIG. 5, since the dislocations are concentrated near the center of the portion corresponding to the groove 24, when dividing the sapphire substrate body 21 into individual devices, the center of the groove is The part can be used as a scribe line, and the manufacturing process can be simplified.

FIG. 6 is a sectional view showing sequential steps of manufacturing another embodiment of the substrate for epitaxial growth according to the present invention. First, as shown in FIG. 6A, a metal having a high melting point, in this example, a tungsten film 31 in this example is deposited uniformly on the back surface 21b of the C-plane sapphire substrate main body 21 to a thickness of, for example, 0.5 μm. Forming a photoresist 32,
An opening 33 is formed in the photoresist 32 by photolithography. For example, the opening 33 can have a width of approximately 5 μm, and the interval between successive openings can be approximately 5 μm.

Next, as shown in FIG. 6B, using the photoresist 32 as a mask, the tungsten film 31 thereunder is selectively removed by etching, and then the photoresist 32 is removed. Since the remaining tungsten films extend in parallel at equal intervals, a striped tungsten film 31 is obtained. Such etching of the tungsten film 31 can be performed by dry etching such as ion beam etching, for example, but can also be performed by wet etching. Further, a similar metal film stripe can be manufactured by using the lift-off method.

As described above, a plurality of tungsten films 3 are formed on the surface.
Sapphire substrate body 21 in which 1 is formed in a stripe shape
Is introduced into the CVD apparatus 25 as shown in FIG.
At this time, the substrate is placed on the heater so that the back surface 21b on which the tungsten film 31 is formed contacts the heater 26 via the susceptor. The sapphire base body 21 is heated by the heater 26.
Is heated, but is heated mainly by heat conduction and radiant heat due to contact through the tungsten film 31. That is, in the portion where the tungsten film 31 is formed, heat conduction occurs due to contact, and the sapphire base body 21 is transparent to infrared rays. However, since the tungsten film effectively absorbs infrared rays, heating by radiant heat is also performed. Therefore, a temperature distribution corresponding to the pattern of the tungsten film 31 formed on the back surface 21b appears on the front surface 21a of the sapphire base body 21.

[0032] Thus the surface 21a of the sapphire substrate body 21 by selective lateral _growth, Al _x Ga y _In z N
When the (x + y + z = 1, x, y, z ≧ 0) film 27 is formed by epitaxial growth with appropriately selected film forming conditions, for example, a high temperature corresponding to the tungsten film 31 on the surface 21 a of the sapphire substrate main body 21 is obtained. In the region, the lateral growth is promoted, and the lateral growth is suppressed in the low temperature portion corresponding to the portion between the tungsten films, so that the selective lateral growth occurs. As shown by the arrow in FIG.
_Al x _Ga y In the region corresponding to the Tanguten film 31
_{z N} film 27 grows in the lateral direction movement direction is bent dislocations, but will be moved laterally, in the area between the portion corresponding to the tungsten film 31 Al _x Ga _y I
n z dislocation caused by the growth of the _N layer 26 is not able to move laterally. Therefore, a region where the dislocation density becomes smaller appears according to the stripe pattern related to the stripe pattern of the tungsten film 31. Of course,
It is possible to use the formation of the buffer layer in combination with the film formation.

In this manner, the sapphire substrate body 21
Is deposited on the surface 21a _Al x _Ga y In _z N film 2
In No. 7, the dislocation density in the region W from the vicinity of the side edge of the tungsten film 31 to the vicinity of the center between successive tungsten films becomes very small.

The present invention is not limited to the above-described embodiment, but can be variously modified and modified. For example, in the above-described embodiment, the substrate body is formed with c-plane sapphire, but a substrate body formed of SiC, GaN, or the like may be used. Further, in the above-described second embodiment, the metal film is formed of a tungsten film, but may be formed of another refractory metal such as molybdenum or tantalum. Furthermore, in the above-described embodiment, the substrate for epitaxial growth is used to manufacture a light emitting diode that emits blue light. However, a light emitting diode that emits light or ultraviolet light of another color, a laser diode, a field effect transistor, or the like is used. Other pn junction devices can be manufactured.

As described above, in the epitaxial growth substrate according to the present invention, stripe-shaped grooves and metal films are formed on the back surface of the base body. These grooves and metal films are subsequently removed by polishing. It is common to use
Since the substrate for epitaxial growth remains immediately after the production of the substrate for epitaxial growth, the substrate for epitaxial growth of the present invention also includes the substrate from which the grooves and the metal film have been removed.

Furthermore, in the present invention, how a region having a low dislocation density appears can not be uniquely specified because it is determined by various conditions. The stripes are formed according to the stripe pattern related to the stripe pattern of the groove formed on the back surface of the base body.

[0037]

As described above, the epitaxy according to the present invention is
In a substrate for char growth, it is formed on the substrate body.
Al_xGa_yIn_zN (x + y + z = 1, x, y, z
≧ 0) Since the film has a low dislocation density,
Al_xGa_yIn _zN (x + y + z = 1, x, y, z ≧
0) Emitting diode
Diode, laser diode, field effect transistor, etc.
Forming an n-junction device to improve its properties
Can be. Especially for light emitting diodes and laser diodes
In this case, degradation of characteristics due to dislocations becomes a serious problem.
Thus, the effect of the present invention is remarkable.

[0038] Further, in the method for manufacturing an epitaxial growth substrate according to the present invention, after the buffer layer was formed by CVD on the substrate body, formed by CVD of _Al x _Ga y In _z N film to form a mask thereon compared with the conventional manufacturing method for film, by etching process removed after deposition substrate body from the CVD apparatus, complicated processes such as forming a Al x _Ga y _in z _N film was again introduced into the CVD apparatus Therefore, a substrate for epitaxial growth can be efficiently manufactured. Also, since the grooves and the metal film are formed on the back surface, not on the front surface of the base body,
There is also an advantage that no effect against _Al x _Ga y In _z N film epitaxially grown on the surface.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a configuration of a conventional light emitting diode.

2a to 2c are cross-sectional views showing sequential steps of a conventional selective lateral growth process for reducing dislocation density.

FIGS. 3a to 3c are cross-sectional views showing sequential steps of manufacturing an example of an epitaxial growth substrate according to the present invention.

FIG. 4 is a graph showing a temperature distribution on a surface of a base body.

FIG. 5 is a cross-sectional view showing the state of the dislocation density in the substrate for epitaxial growth of this example.

FIGS. 6a to 6c are cross-sectional views showing sequential steps of manufacturing another example of the epitaxial growth substrate according to the present invention.

FIG. 7 is a cross-sectional view showing the state of dislocation density in the substrate for epitaxial growth of the present example.

[Explanation of symbols]

21 sapphire substrate body, 22 photoresist,
23 opening, 24 groove, 25 CVD device, 26
_{Heater, 27 Al x Ga y In z} N film, 31 a metal film, a photoresist, 33 opening, W dislocation density is reduced area

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Akiyo Nagai 2-56 Sudacho, Mizuho-ku, Nagoya, Aichi Prefecture Inside Nihon Insulators Co., Ltd. No. 56 F term in Nihon Insulators Co., Ltd. (reference) 4G077 AA03 AB03 BE11 DB01 ED06 EE03 EE04 EF01 5F041 AA40 AA44 CA34 CA40 CA46 CA64 CA65 CA75 CA83 5F045 AB18 AB40 AF02 AF04 AF09 AF20 BB12 CA10 CA12 EK25 CB30 CB075 DA25

Claims (6)

[Claims] 1. A substrate main body made of sapphire, SiC, GaN or the like having a stripe-shaped groove on the back surface, and epitaxially deposited on the surface of the substrate main body by selective lateral growth,
_{Al x Ga y In z N (} x + y + z = 1, x having a small area of the dislocation density formed in accordance with a stripe pattern that is associated with the pattern of the stripe-shaped groove,
(y, z ≧ 0) film. 2. A substrate body such as sapphire, SiC, or GaN having a stripe-shaped metal film on the back surface, and epitaxially deposited on the surface of the substrate body by selective lateral growth, the pattern being related to the pattern of the stripe-shaped metal film. _{Al x Ga y in z N (} x + y + z having a small area of the dislocation density formed in accordance with a stripe pattern =
1, x, y, z ≧ 0) film. 3. The substrate for epitaxial growth according to claim 2, wherein said metal film is formed of a refractory metal. 4. A sapphire, SiC, a groove stripe on the back surface of the substrate body, such as GaN, the surface of the substrate body while heating by a heater from the rear surface, Al _x Ga _y In _z by epitaxial lateral overgrowth N (x + y + z = 1, x,
(y, z ≧ 0) A method of manufacturing a substrate for epitaxial growth, comprising epitaxially depositing a film and forming a region having a low dislocation density according to a stripe pattern related to the stripe-shaped groove pattern. Wherein after forming the Al x _Ga y _In z _N film, method of manufacturing a substrate for epitaxial growth according to claim 4, characterized by dividing the substrate body the groove as scribe lines. 6. sapphire, SiC, a stripe-shaped metallic film is formed on the back surface of the substrate body, such as GaN, the surface of the substrate body while heating by a heater from the rear surface, Al _x Ga _y In the epitaxial lateral overgrowth _z N (x + y + z = 1,
(x, y, z ≧ 0) A method for manufacturing a substrate for epitaxial growth, comprising epitaxially depositing a film and forming a region having a low dislocation density according to a stripe pattern related to the pattern of the stripe-shaped metal film.