JP2001255279A - Pattern defect inspection method and its device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To inspect, at high speed with high reliability, a defect on an inspection object comprising three-dimensional minute patterns. SOLUTION: A substrate is moved at least in one direction, and simultaneously many pattern formed on the substrate are imaged successively by a first imaging means to obtain image signals. The image signals of the patterns obtained by successive imaging are memorized successively, and the image signals obtained by successive imaging are compared with the memorized image signals to extract defect expectations. A defect candidate to be inspected in detail is extracted from among the extracted defect candidates, and an image having three-dimensional information of the extracted defect candidate to be inspected in detail is obtained, and the pattern defect is detected based on the image having the three-dimensional information.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an LSI wafer and a TFT.
The present invention relates to a pattern defect method for inspecting a defect of a three-dimensional fine pattern such as a three-dimensional pattern and an apparatus therefor.

[0002]

2. Description of the Related Art A conventional method is disclosed in JP-B-62-39811.
As described in Japanese Patent Application Laid-Open Publication No. H10-107, a defect of a pattern is detected by means for comparing patterns which are supposed to be the same as means for detecting a pattern with a sensor and converting the pattern into a digital image.

That is, as shown in FIG. 1A, a detection target is a pattern on a semiconductor wafer such as a memory LSI,
This is a pattern of an FT (Thin Film Transister), a pattern of a printed wiring board, a pattern of a ceramic substrate, or a pattern of a mask or a reticle used in a process of manufacturing them. Here, a pattern on a semiconductor wafer will be described as an example, but the same holds true for other patterns. The semiconductor wafer pattern has several tens of individual chips that are ultimately separated into individual products mounted on a single wafer.They have the same pattern in each chip. There is a portion having repeatability and a portion having poor periodicity such as a peripheral circuit. Further, as the pattern becomes finer, the pattern becomes three-dimensional and exceeds the depth of focus of a detection optical system such as an objective lens.

The principle of detecting such a pattern defect will be described with reference to FIG. 1A shows a detected and stored pattern, FIG. 1B shows a detected pattern, and FIG. 1C shows a difference between (a) and (b). Paying attention to the fact that each chip has exactly the same pattern or that each cell has repeatability at a fixed cycle, detect and store the pattern, another chip that should be the same Are then detected and compared. If there is no defect in any of the patterns, there is no difference between the patterns. However, if there is a defect in any of the patterns, a difference occurs in the pattern at the defective portion. Can be detected to detect a pattern defect.

[0005]

Generally, a detection optical system such as an objective lens for detecting a pattern has a certain depth of focus, and a pattern exceeding this depth of focus cannot be detected accurately. Conventionally, when the object becomes three-dimensional, accurate patterns cannot be detected conventionally, but if the comparison is the same, the normal part is determined. Inspection was conducted ignoring the three-dimensional shape.

However, when considering the detection of a defect, an accurate pattern is not detected outside the depth of focus, and the resolution is reduced or the image is inverted. Due to this effect, there are cases where even a defective portion has a small detection pattern difference from a normal portion and cannot be determined as a defect. For this reason, either a fine defect cannot be detected, or a fine defect can be detected, but a normal part is erroneously detected as a defect.

SUMMARY OF THE INVENTION An object of the present invention is to provide a pattern defect method and a pattern defect apparatus capable of inspecting a true defect on a three-dimensional pattern with miniaturization at a high speed and with high reliability. It is in.

[0008]

In order to achieve the above object, the present invention provides a method for inspecting a defect on a fine pattern, the method comprising the steps of: providing a planar optical microscope having a small depth of focus for the fine pattern; Detects a two-dimensional optical image signal and compares it with a reference image signal to extract defect candidates,
Among the extracted defect candidates, an obvious defect is determined as a defect, and among the extracted defect candidates, a defect which cannot be determined as a defect is detected by using a three-dimensional microscope to detect a three-dimensional shape signal. A pattern defect inspection method characterized in that a true defect is determined by comparing with a three-dimensional shape signal.

The present invention also provides an apparatus for inspecting a defect on a fine pattern, wherein a two-dimensional optical image signal of the fine pattern is detected and compared with a reference image signal to extract a defect candidate. A shallow planar optical microscope, selecting means for judging a defect as an obvious defect among the defect candidates extracted by the planar optical microscope having a shallow depth of focus, and the planar optical microscope having a shallow focal depth. A three-dimensional microscope for detecting a three-dimensional shape signal and comparing the extracted defect candidate with a reference three-dimensional shape signal to determine a true defect for a defect that cannot be determined as a defect among the extracted defect candidates. This is a pattern defect inspection device characterized by the following. According to the present invention, in the pattern defect inspection apparatus, the three-dimensional microscope is configured by a confocal microscope. The present invention is also characterized in that the pattern defect inspection apparatus is constituted by a scanning microscope using a focused energy beam as the three-dimensional microscope.

[0010]

Generally, a detection optical system such as a microscope for detecting a fine pattern has a resolution Δx determined by a detection wavelength λ and NA.
And the depth of focus Δz. To detect a finer pattern, it is necessary to reduce the resolution Δx. For example, in order to detect a 0.3 μm pattern at a center wavelength λ = 500 nm, the NA needs to be 0.8 or more according to equation (1).

Δx = λ / (2 × NA) (Equation 1) On the other hand, if the center wavelength λ = 500 nm in a microscope using an objective lens with a depth of focus of 0.8, the depth of focus Δz can be calculated from the equation (2). = 0.4 μm.

Δz = λ / (2 × NA × NA) (Equation 2) Further, as the pattern to be detected is miniaturized, as shown in FIG. However, patterns exceeding this depth of focus cannot be detected accurately.

In the case of such a three-dimensional object, an accurate pattern cannot be detected conventionally, but if the same is compared, the same part is regarded as a normal part. Since it was detected, it was inspected ignoring that it was a three-dimensional shape.

However, when considering the detection of a defect, an accurate pattern is not detected outside the depth of focus, so that the resolution is reduced or the image is inverted. Due to this effect, there are cases where even a defective portion has a small detection pattern difference from a normal portion and cannot be determined as a defect. Conversely, if a small pattern difference is detected as a defect, a slight pattern difference existing in a normal portion will be determined as a defect. For this reason, either a fine defect cannot be detected, or a fine defect can be detected, but a normal part is erroneously detected as a defect.

As a means for detecting a defect of a three-dimensional pattern, a method of forming a long focal depth image or a three-dimensional shape image based on a confocal microscope image, an SE with a deep focal depth
There is a method using M images. However, both methods are slow, and it is substantially impossible to inspect the entire three-dimensional pattern.

The present invention has been made by paying attention to these points. That is, according to the present invention, a true defect on a pattern which has become three-dimensional with miniaturization can be inspected at high speed and with high reliability.

[0017]

Embodiments of the present invention will be described below with reference to the drawings.

First, the principle of the present invention will be described with reference to FIG. The present invention relates to a semiconductor wafer pattern such as a memory LSI, a TFT (Thin Film Transister)
Patterns, printed wiring board patterns, ceramic substrate patterns, and three-dimensional micropatterns such as masks and reticles used in the process of manufacturing them as optical images to inspect for defects and extract defect candidates Pattern inspection apparatus 2 which is an optical microscope with a small depth of focus
A transmitting unit 4 for transmitting defect information 3 such as coordinates and dimensions of a defect candidate from the plane pattern inspection apparatus 2; and a defect from only the defect information based on the defect information transmitted by the transmitting unit 4. A selecting means 5 for removing a known object, a confocal microscope or a focused energy detecting a three-dimensional shape of a coordinate portion of the defect information selected by the selecting means or a pattern with a deep depth of focus to determine a true defect A detailed inspection device 6 which is a three-dimensional microscope constituted by a scanning microscope using a beam.

The flat pattern inspection apparatus 2 can detect a fine defect as an optical image. However, erroneous detection indicating a normal portion as a defect is also performed. After completion of the inspection of the entire surface of the typical fine pattern, the defect information 3 of the defect candidate is transmitted by the transmitting means 4,
The selecting means 5 removes, for example, an object having a larger defect size than the defect information of the defect candidate as a clear defect and sends the information to the detailed inspection device 6. The detailed inspection device 6 composed of the three-dimensional microscope detects a three-dimensional shape only at the location of the selected defect candidate, and detects a true defect based on the three-dimensional shape. Alternatively, an image having a large depth of focus is detected, and a true defect is detected based on the image. Thus, the entire surface of the wafer can be inspected at high speed to extract defect candidates, and a three-dimensional shape image or a long depth of focus image of the defect candidate portion can be detected to inspect three-dimensional defects with high reliability.

Hereinafter, a first embodiment of the present invention will be described with reference to FIG. In this embodiment, a pattern of an LSI wafer will be described as an example, but it is needless to say that the present invention can be applied to a pattern of a TFT or the like. FIG. 4 is an overall configuration diagram of an inspection device (hereinafter, abbreviated as an inspection device) for inspecting a three-dimensional fine pattern such as an LSI wafer. The inspection device is an illumination light source 9
And a detection optical system 11 for detecting reflected light by illuminating light from a light source onto a wafer 10 which is an inspection target having a three-dimensional fine pattern on the stage 8 and a sensor 12 for detecting reflected light
And a storage unit 13 for storing an image pattern from the sensor, a comparison unit 14 for comparing the image pattern detected by the sensor 12 with the image pattern from the storage unit, and a defect extraction unit 15 for extracting a defect based on the image from the comparison unit. Pattern inspection apparatus 2 for detecting a planar pattern composed of
Transmitting means 4 for transmitting defect information 3 such as coordinates and dimensions of a defect candidate inspected by the plane pattern inspection apparatus, and selecting means for removing an object which can be clearly identified as a defect only from the defect information based on the transmitted defect information. 5 and a detailed inspection apparatus 6 for inspecting the three-dimensional shape using a confocal microscope that detects the three-dimensional shape of the coordinate part of the selected defect information and extracts a true defect.

Next, the operation of the inspection apparatus will be described. The plane pattern inspection apparatus 2 scans the stage 8 to sequentially detect the image pattern of the wafer 10 with the sensor 12, stores the image pattern in the storage unit 13, and compares the detected image pattern with the stored image pattern which should be the same. A part having a difference equal to or more than a certain value compared by the part 14 is extracted as a defect candidate 16 by the defect extracting part 15.

The coordinates and dimensions of the defect candidate 16 are sent as defect information 3 to the selection means 5 by the transmission means 4 comprising a LAN. The selection unit 5 removes an object that can be clearly determined to be a defect based on the equation (3) based on the defect area S of the defect information.

S> Sth (Equation 3) where Sth is a predetermined area threshold. The defect information selected by the selection means 5 is sent to the detailed inspection device 6.
The inspection device detects a three-dimensional shape only at the coordinate position of the defect information, compares the detected three-dimensional shape with a three-dimensional shape that should be the same pattern, and determines that there is a true defect if there is a difference.

Next, a detailed inspection apparatus 6 using a confocal microscope will be described with reference to FIG. Detailed inspection device 6 is confocal microscope 1
7, a z stage 18 capable of changing the height of the sample stage with an accuracy of 0.1 μm or less, and a TV camera 2 for detecting images of a confocal microscope at each height of the z stage.
0, a three-dimensional shape forming a three-dimensional shape based on a pattern (two-dimensional image signal) at each height detected by the TV camera 20 and each height (z displacement) signal output from the z stage 18 The configuration unit 21, a storage unit 22 that stores the three-dimensional shape configured by the three-dimensional configuration unit 21, and compares the three-dimensional shape of the adjacent chip stored in the storage unit 22 with the detected three-dimensional shape. And a defect determination unit 23 for detecting a defect.

The detailed inspection device 6 operates as follows to determine a defect. The pattern is detected by the TV camera 20 while gradually raising the z-stage 18, and the three-dimensional shape forming unit 21 forms a three-dimensional shape by setting the height of the detected light amount of each pixel of the TV camera that is the highest at that point. I do. The difference between the configured three-dimensional shape and the three-dimensional shape of an adjacent chip stored in the storage unit 22 is calculated by a defect determination unit 23,
A location where the difference is equal to or greater than a certain value is determined as a defect.

Here, the principle of three-dimensional shape detection by a confocal microscope will be described with reference to FIG. The light from the light source 24 is radiated to only one point of the object through the moving pinhole 19, and only that point is reflected by the TV through the same pinhole 19.
It is detected by the camera 20. When the object is at the focal position, the reflected light returns to the pinhole position, so that the TV camera 20 can detect it brightly. On the other hand, when the object goes out of the focal position, the reflected light is condensed at the reflected light return position, and almost no light passes through the pinhole.

Due to these properties, as shown in FIG. 7, a plurality of sheets detected by the TV camera 20 through the pinhole 19 while gradually raising the z-stage 18 to gradually change the height of the object to be inspected. Among the images, the detected light amount is high at a focused position, that is, at a position where the height of the z-stage detected from the z-stage 18 coincides with the height of the inspection object, and becomes low at other positions. For this reason, the stage height (height (z displacement) signal output from the z stage 18) with the highest detected light amount is the height 26 of the inspection object. This configuration has the following features. (1) The depth of focus is extremely shallow, and if the focal position is deviated, the amount of detected light rapidly decreases. (2) The resolution is improved about twice.

According to the present embodiment, since a three-dimensional shape is obtained by using a high-resolution confocal microscope, there is an effect that a true defect can be accurately obtained.

Next, a first modification of this embodiment will be described. The detailed inspection device 6 is incorporated in the planar pattern inspection device 2. This has the effect of making the apparatus compact and omitting initialization such as coordinate alignment.

Next, a second modification of this embodiment will be described with reference to FIG. FIG. 7 is a graph in which the horizontal axis indicates the stage height and the vertical axis indicates the detected light amount, and the change in the detected light amount at one point is examined. As can be seen from the graph, the detected light amount is almost the same near the stage height where the detected light amount is the highest, and the height accuracy is not obtained.
Therefore, the three-dimensional shape forming unit 21 uses 1/1 of the maximum detected light amount.
The height of the stage at the position of the center of gravity of the portion having two or more detected light amounts is defined as the height of the object. Thus, there is an effect that the height of the target can be detected with an accuracy smaller than the height pitch of the stage for detecting the pattern by the TV camera.

Further, as a similar modification, there is a method of obtaining a peak position by approximating with a function such as a quadratic curve or a normal distribution, and has the same effect.

Next, a third modification of this embodiment will be described. As a means for forming a three-dimensional shape, a light cutting method and moire are well known. A three-dimensional shape is detected using these methods.

Next, a fourth modification of the present invention will be described. As the transmission means 4, any of a magnetic storage medium such as a floppy (registered trademark) disk and a tape, an indirect transmission means such as a printer output, and a direct transmission means such as a communication cable can be used. These have similar effects.

Hereinafter, a second embodiment of the present invention will be described with reference to FIG. FIG. 8 is an overall configuration diagram of the inspection apparatus. The inspection apparatus detects a plane pattern and extracts a defect candidate, and determines the true defect by inspecting a long-focal pattern only at the defect candidate position based on the coordinates of the defect candidate using a confocal microscope. It consists of an inspection device 6.

Next, a detailed inspection apparatus 6 using a confocal microscope will be described with reference to FIG. The detailed inspection device 6 is capable of changing the vertical height with a confocal microscope 17 with an accuracy of 0.1 μm or less and a height (displacement) signal of the sample stage with an accuracy of 0.1 μm or less. Output stage 18
A TV camera 20 for detecting an image of the confocal microscope at each height of the z stage 18, a pattern (two-dimensional image signal) at each height detected by the TV camera 20, and an output from the z stage 18. Based on the z displacement signal obtained with an accuracy of 0.1 μm or less, a z-displacement of a point of the pixel which indicates the maximum value of the detected light amount for each two-dimensional pixel can be used to form a pattern with a deep depth of focus (three-dimensional Image signal), a storage unit 22 that stores a three-dimensional shape signal that forms a three-dimensional shape by the long focus pattern configuration unit 27, and a storage unit 22 that stores a three-dimensional shape signal. The defect determination unit 23 detects a true defect by comparing a long-focal pattern (reference three-dimensional shape signal) of an adjacent chip and a detected long-focal pattern (three-dimensional shape signal). .

The detailed inspection device 6 operates as follows to determine a true defect. While gradually raising the z-stage 18, the TV camera 20 detects a pattern of a plane cross section as a two-dimensional image signal each time, and the long focus pattern forming unit 27 detects a large number of two-dimensional image signals detected from the TV camera 20 each time. For each pixel, a long focal point pattern is formed by using the z displacement of a point of the pixel indicating the maximum value of the detected light amount. The defect determination unit 23 calculates a difference between the configured long focal pattern and the long focal pattern of the adjacent chip stored in the storage unit 22, and determines a location where the difference is equal to or more than a certain value as a defect.

Next, the principle of detecting a long focus pattern will be described. The TV camera 20 passes through the pinhole while gradually raising the z-stage 18 to gradually change the height of the inspection object.
The position where the inner focus of the plurality of images detected from, that is, the z stage height detected from the z stage 18 is
The detected light amount is high at a location that matches the height of the object to be inspected, and is low at other locations. For this reason, the stage height with the highest detected light quantity is the height of the inspection object,
The detected light amount at that time is the detected light amount when the focus is on.

According to the present embodiment, since an in-focus image is obtained by a high-resolution confocal microscope, there is an effect that a true defect can be accurately obtained.

As the detailed inspection device 5, for example, a focusing microscope described in JP-A-03-63507 can be used.

A first modification of this embodiment will be described. If a scanning microscope using a focused energy beam such as an SEM, a scanning tunneling microscope, or a proximity light beam scanning microscope is used as a detector of the detailed inspection device 5, an image with an extremely deep depth of focus can be detected. Detailed inspection can be performed using image signals detected from these detectors.

Further, the detector of the detailed inspection device 5 may be constituted by a three-dimensional shape detection device using a light section method or a moire method.

[0042]

According to the present invention, there is an effect that a true defect on a three-dimensional fine pattern can be inspected at high speed and with high reliability.

[Brief description of the drawings]

FIG. 1 is a diagram showing a two-dimensional image signal, (a) shows a storage pattern which is a reference image signal, (b) shows a detection pattern which is a detected image signal to be detected, and (c) shows a detection pattern which is a detected image signal to be detected. FIG. 7 is a diagram illustrating a pattern difference that is a mismatched image signal.

FIG. 2 is a cross-sectional view of an LSI wafer having a three-dimensional fine pattern to be inspected according to the present invention.

FIG. 3 is a diagram showing the principle of a pattern inspection apparatus according to the present invention.

FIG. 4 is a schematic configuration diagram showing a first embodiment of a pattern inspection apparatus according to the present invention.

FIG. 5 is a configuration diagram showing a specific example of the detailed inspection device shown in FIG. 4;

6A and 6B are diagrams illustrating an embodiment of the confocal microscope illustrated in FIG. 5; FIG. 6A is a diagram illustrating a case where a detection point of the inspection target is at a focal position; It is a figure showing the case where a detection point is not in a focus position.

7 is a diagram showing a relationship between a stage height z detected from a z stage and a detected light amount detected from a TV camera in the confocal microscope shown in FIG.

FIG. 8 is a schematic configuration diagram showing a second embodiment of the pattern inspection apparatus according to the present invention.

FIG. 9 is a configuration diagram showing a specific example of the detailed inspection apparatus shown in FIG. 8;

[Explanation of symbols]

2 Planar pattern inspection apparatus, 3 Defect information, 4 Transmission means, 5 Selection means 6 Detailed inspection apparatus, 8 Stage, 9 Illumination light source, 10
... Wafer 11 ... Detection optical system, 12 ... Sensor, 13 ... Storage unit, 14
... Comparison unit 15 ... Defect extraction unit, 16 ... Defect candidate, 17 ... Confocal microscope, 18 ... Z stage 19 ... Pinhole, 20 ... TV camera, 21 ... Three-dimensional configuration unit 22 ... Storage unit, 23 ... Defect judgment unit , 24 ... light source, 27 ...
Long focus pattern component

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[Procedure amendment]

[Submission date] February 2, 2001 (2001.2.2)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0001

[Correction method] Change

[Correction contents]

[0001]

The present invention relates to an LSI wafer and a TFT.
The present invention relates to a pattern defect inspection method and an apparatus for inspecting defects of a three-dimensional fine pattern such as a three-dimensional pattern.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0007

[Correction method] Change

[Correction contents]

An object of the present invention is to provide a pattern defect inspection method and apparatus capable of inspecting a true defect on a pattern which has become three-dimensional with miniaturization at high speed and with high reliability. It is in.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0008

[Correction method] Change

[Correction contents]

[0008]

That is, in order to achieve the above object, the present invention provides a pattern defect inspection method for inspecting a pattern defect of a substrate on which a number of patterns which should have the same shape are formed. While moving in at least one direction, the first imaging means sequentially captures a large number of patterns formed on the substrate to obtain image signals, sequentially stores the image signals of the patterns obtained by sequentially capturing, and sequentially stores A defect candidate is extracted by comparing the image signal obtained by imaging with the stored image signal, a defect candidate to be inspected in detail is extracted from the extracted defect candidates, and a defect candidate to be inspected in detail is extracted. Is required to take an image of the
An image having three-dimensional information of a defect candidate is obtained, and a pattern defect is detected based on the obtained image having three-dimensional information.

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0009

[Correction method] Change

[Correction contents]

Further, in order to achieve the above object, the present invention provides a pattern defect inspection apparatus for inspecting a pattern defect of a substrate on which a large number of patterns which should have the same shape is formed, at least by mounting the substrate. Table means for moving in one direction, first image pickup means for sequentially picking up an image of the substrate while moving the substrate in at least one direction by the table means to sequentially obtain image signals of a large number of patterns formed on the substrate , A storage unit for sequentially storing image signals of patterns sequentially obtained by the first imaging unit, and an image signal obtained by sequentially imaging the first imaging unit and an image signal stored in the storage unit. Defect candidate extraction means for extracting defect candidates;
A detailed inspection defect candidate extracting means for extracting a defect candidate to be inspected in detail from the defect candidates extracted by the defect candidate extracting means, and a three-dimensional defect candidate for the detailed inspection extracted by the detailed inspection defect candidate extracting means. A second image pickup means for obtaining an image having information and a defect detection means for detecting a pattern defect based on the image having three-dimensional information obtained by the second image pickup means are provided.

──────────────────────────────────────────────────続 き Continuation of the front page (51) Int.Cl. ⁷ Identification symbol FI theme coat ゛ (reference) // G01B 15/00 G01B 15/00 B G01N 13/10 G01N 13/10 F 13/14 13/14 A (72) Inventor Shunji Maeda 292, Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture Inside Hitachi, Ltd.Production Technology Laboratory Co., Ltd. (72) Inventor Mitsuyoshi Isobe 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture

Claims (7)

[Claims] 1. A method for inspecting a defect of a pattern on a substrate on which a large number of patterns to be originally formed in the same shape is formed, wherein the substrate is moved in at least one direction by a first image pickup means. An image signal is obtained by sequentially capturing a large number of patterns formed on the image signal, the image signal of the pattern obtained by sequentially capturing is sequentially stored, and the image signal obtained by sequentially capturing the image signal and the stored image signal are To extract a defect candidate to be inspected in detail from among the extracted defect candidates, obtain an image having three-dimensional information of the extracted defect candidate to be inspected in detail, A defect of the pattern based on an image having three-dimensional information. 2. The extracted defect candidates to be inspected in detail 3
2. The pattern defect inspection method according to claim 1, wherein an image having dimensional information is acquired using a confocal microscope. 3. The extracted defect candidates to be inspected in detail.
2. The pattern defect inspection method according to claim 1, wherein an image having dimensional information is acquired using a scanning electron microscope. 4. An apparatus for inspecting a defect of a pattern on a substrate on which a large number of patterns that should have the same shape are formed, comprising: table means for mounting the substrate and moving the substrate in at least one direction; At least one by means
First imaging means for sequentially capturing image signals of a large number of patterns formed on the substrate by imaging the substrate moving in a direction, and the first imaging means for sequentially imaging the pattern obtained by the first imaging means. Storage means for sequentially storing image signals; defect candidate extraction means for extracting defect candidates by comparing the image signals obtained by sequentially imaging with the first imaging means and the image signals stored in the storage means; A detailed inspection defect candidate extracting means for extracting a defect candidate to be inspected in detail from among the defect candidates extracted by the defect candidate extracting means, and a three-dimensional defect candidate for the detailed inspection extracted by the detailed inspection defect candidate extracting means. A second image pickup means for obtaining an image having the above information, and a defect detecting means for detecting a defect of the pattern based on the image having three-dimensional information obtained by the second image pickup means. Pattern defect査 apparatus. 5. The pattern defect inspection apparatus according to claim 5, wherein said second imaging means is constituted by using a confocal microscope. 6. The pattern defect inspection apparatus according to claim 5, wherein said second imaging means is constituted by using a scanning electron microscope. 7. A connection means for connecting the defect candidate extraction means and the detailed inspection defect candidate extraction means via a communication line, wherein information on the defect candidates extracted by the defect candidate extraction means is transmitted via the connection means. 6. The pattern defect inspection apparatus according to claim 5, wherein the pattern defect inspection apparatus transmits the detailed inspection defect candidate to the detailed inspection defect candidate extraction unit.