JP2001251156A - Piezoelectric vibrating reed, its manufacture and its device - Google Patents

Piezoelectric vibrating reed, its manufacture and its device

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Publication number
JP2001251156A
JP2001251156A JP2000062306A JP2000062306A JP2001251156A JP 2001251156 A JP2001251156 A JP 2001251156A JP 2000062306 A JP2000062306 A JP 2000062306A JP 2000062306 A JP2000062306 A JP 2000062306A JP 2001251156 A JP2001251156 A JP 2001251156A
Authority
JP
Japan
Prior art keywords
vibration frequency
vibrating
piezoelectric vibrating
unit
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000062306A
Other languages
Japanese (ja)
Inventor
Osamu Iwamoto
修 岩本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2000062306A priority Critical patent/JP2001251156A/en
Publication of JP2001251156A publication Critical patent/JP2001251156A/en
Withdrawn legal-status Critical Current

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  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a piezoelectric vibrating reed whose oscillation frequency can be adjusted while measuring the oscillation frequency and whose oscillation frequency can be adjusted by a large quantity, and to provide its manufacturing method and device. SOLUTION: Anodic oxidation films 34 are formed on the exciting electrodes of a piezoelectric vibrating reed 30 provided a vibrating part 31 whose center is made thin and the exciting electrodes 32 formed at the vibrating part. Because the anodic oxidation films are piled up gradually on the vibrating part in this way to increase its thickness and the piezoelectric vibrating reed is manufactured by measuring the oscillation frequency of the vibrating part each time the anodic oxidation film is piled up, the piezoelectric vibrating reed in which the oscillation frequency of the vibrating part accurately meets a prescribed value can be manufactured. Furthermore, because the oscillation frequency of the vibrating part is adjusted simply by piling up the anodic oxidation films, the adjustment quantity of the oscillation frequency can be made large.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、圧電振動片並びに
その製造方法及び装置に関し、特に振動周波数が高精度
に調整された圧電振動片並びにその製造方法及び装置に
関するものである。
The present invention relates to a piezoelectric vibrating reed and a method and an apparatus for manufacturing the same, and more particularly, to a piezoelectric vibrating reed whose vibration frequency is adjusted with high precision, and a method and an apparatus for manufacturing the same.

【0002】[0002]

【従来の技術】圧電振動片は、振動部と励振電極及び引
き出し電極で概略構成されている。このような構成の圧
電振動片は、振動部の板厚により振動周波数が決定され
る。振動部の板厚と振動周波数は反比例の関係にあり、
例えば振動部の板厚が100μmのときの振動周波数は
17.5MHzとなり、振動部の板厚が50μmのとき
の振動周波数は35MHzとなる。
2. Description of the Related Art A piezoelectric vibrating reed is generally constituted by a vibrating portion, an excitation electrode and an extraction electrode. The vibration frequency of the piezoelectric vibrating reed having such a configuration is determined by the thickness of the vibrating portion. The thickness of the vibrating part and the vibration frequency are in inverse proportion,
For example, when the thickness of the vibrating part is 100 μm, the vibration frequency is 17.5 MHz, and when the thickness of the vibrating part is 50 μm, the vibration frequency is 35 MHz.

【0003】ところが、振動部の板厚が薄くなるほど、
機械的な研磨加工は困難になり、また振動に対する強度
は弱くなり、振動部が破損し易くなる。このため、高周
波数の圧電振動片は、振動部の中央部のみを薄く加工
し、外周部を補強枠として厚く加工した、いわゆる逆メ
サ型の形状に作製されている。振動部の中央部の薄板化
は、機械的な研磨で行う場合もあるが、殆どがウエット
エッチングで行われている。
However, as the thickness of the vibrating portion becomes thinner,
Mechanical polishing becomes difficult, the strength against vibration is weakened, and the vibrating part is easily damaged. For this reason, the high-frequency piezoelectric vibrating reed is manufactured in a so-called inverted mesa shape in which only the central portion of the vibrating portion is thinned and the outer peripheral portion is thickened as a reinforcing frame. The thinning of the central portion of the vibrating portion may be performed by mechanical polishing, but is mostly performed by wet etching.

【0004】図10(A)、(B)は、一般的な逆メサ
型圧電振動片の一例を示す斜視図及びそのA−A線断面
図である。
FIGS. 10A and 10B are a perspective view showing an example of a general inverted-mesa type piezoelectric vibrating piece and a sectional view taken along line AA of FIG.

【0005】この逆メサ型圧電振動片10は、矩形板状
の振動部11の中央部のみが薄く加工され、外周部が厚
く加工されている。そして、振動部11の中央部の表裏
面には励振電極12が形成され、外周部の一端には各励
振電極12に通電するための引き出し電極13が形成さ
れている。
The inverted-mesa type piezoelectric vibrating reed 10 has a rectangular plate-shaped vibrating portion 11 which is thinly processed only at its central portion and whose outer peripheral portion is thickly processed. Excitation electrodes 12 are formed on the front and back surfaces at the center of the vibrating portion 11, and a lead electrode 13 for energizing each excitation electrode 12 is formed at one end of the outer peripheral portion.

【0006】このような逆メサ型圧電振動片10の製造
方法としては、基板に複数のエッチングパターンをフォ
トリソグラフィで形成して所定の厚さまでウエットエッ
チングし、複数のチップをウエットエッチング等で分割
して振動部11とする。そして、励振電極12及び引き
出し電極13をスパッタリング等で形成して最終的な逆
メサ型圧電振動片10とする方法が知られている。
As a method of manufacturing such an inverted mesa type piezoelectric vibrating reed 10, a plurality of etching patterns are formed on a substrate by photolithography, wet-etched to a predetermined thickness, and a plurality of chips are divided by wet etching or the like. To form the vibrating section 11. Then, a method is known in which the excitation electrode 12 and the extraction electrode 13 are formed by sputtering or the like to obtain the final inverted mesa type piezoelectric vibrating piece 10.

【0007】[0007]

【発明が解決しようとする課題】上述した従来の逆メサ
型圧電振動片10の振動周波数を所定値に調整する方法
としては、振動部11の厚みをウエットエッチング等で
減少させる方法と、励振電極12の厚みを研磨等で減少
させる方法が採られている。
As a method for adjusting the vibration frequency of the above-mentioned conventional inverted-mesa type piezoelectric vibrating piece 10 to a predetermined value, a method for reducing the thickness of the vibrating portion 11 by wet etching or the like, A method of reducing the thickness of the substrate 12 by polishing or the like is employed.

【0008】ところが、振動部11の厚みをウエットエ
ッチング等で減少させる方法では、エッチング液を使用
するため、逆メサ型圧電振動片10の振動周波数を測定
しつつ所定値に調整することができない。このため、逆
メサ型圧電振動片10の振動周波数が所定値に達するま
で、振動部11のウエットエッチングと逆メサ型圧電振
動片10の振動周波数の測定を交互に繰り返さなくては
ならず、多大な調整工数が掛かるという欠点があった。
However, in the method of reducing the thickness of the vibrating portion 11 by wet etching or the like, since an etching solution is used, the vibration frequency of the inverted mesa type piezoelectric vibrating piece 10 cannot be adjusted to a predetermined value while being measured. For this reason, the wet etching of the vibrating part 11 and the measurement of the vibration frequency of the inverted mesa type piezoelectric vibrating piece 10 must be alternately repeated until the vibration frequency of the inverted mesa type piezoelectric vibrating piece 10 reaches a predetermined value. There is a disadvantage that it takes a lot of adjustment man-hours.

【0009】また、励振電極12の厚みを研磨等で減少
させる方法では、励振電極12の厚みが極薄であるた
め、逆メサ型圧電振動片10の振動周波数の調整量に限
界が生じ、所定値に調整することができない場合がある
という欠点があった。
Further, in the method of reducing the thickness of the excitation electrode 12 by polishing or the like, since the thickness of the excitation electrode 12 is extremely thin, the amount of adjustment of the vibration frequency of the inverted mesa type piezoelectric vibrating piece 10 is limited, and the predetermined amount is reduced. There was a drawback that the value could not be adjusted.

【0010】本発明の目的は、上記課題を解消して、圧
電振動片の振動周波数を測定しつつ調整することができ
ると共に、振動周波数の調整量を大きく採ることができ
る圧電振動片並びにその製造方法及び装置を提供するこ
とである。
SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and to make it possible to adjust while measuring the vibration frequency of a piezoelectric vibrating piece, and to obtain a large amount of adjustment of the vibration frequency, and to manufacture the same. It is to provide a method and an apparatus.

【0011】[0011]

【課題を解決するための手段】請求項1の発明は、中央
部が薄板化された振動部と、前記振動部に形成された励
振電極とを備えた圧電振動片において、前記励振電極上
に陽極酸化膜が形成されてなることを特徴とする圧電振
動片である。
According to a first aspect of the present invention, there is provided a piezoelectric vibrating reed comprising a vibrating portion having a thin central portion and an exciting electrode formed on the vibrating portion. A piezoelectric vibrating reed characterized by having an anodic oxide film formed thereon.

【0012】この請求項1の発明では、陽極酸化膜を振
動部に徐徐に積み上げて厚みを増加させると共に、振動
部の振動周波数を積み上げの度に測定して作製した圧電
振動片であるので、振動部の振動周波数が所定値に正確
に合った圧電振動片とすることができる。さらに、振動
部の振動周波数の調整は陽極酸化膜の積み上げのみによ
り行っているので、振動周波数の調整量を大きく採るこ
とができる。
According to the first aspect of the present invention, the piezoelectric vibrating reed is manufactured by gradually accumulating the anodic oxide film on the vibrating portion to increase the thickness and measuring the vibration frequency of the vibrating portion each time the vibrating portion is stacked. A piezoelectric vibrating reed in which the vibration frequency of the vibrating part exactly matches the predetermined value can be obtained. Further, since the adjustment of the vibration frequency of the vibrating portion is performed only by stacking the anodic oxide films, a large adjustment amount of the vibration frequency can be adopted.

【0013】請求項2の発明は、振動部の中央部が薄板
化され、前記振動部の中央部に励振電極が形成された圧
電振動片の製造方法において、少なくとも前記励振電極
が形成されている前記振動部の中央部を陽極酸化液に浸
漬し、前記励振電極に直流電圧を供給して前記励振電極
上に陽極酸化膜を形成し、前記励振電極に交流電圧を供
給し前記振動部を振動させて振動周波数を測定し、前記
測定振動周波数が所定値になるまで前記陽極酸化膜の形
成と前記振動周波数の測定を繰り返すことを特徴とする
圧電振動片の製造方法である。
According to a second aspect of the present invention, in a method of manufacturing a piezoelectric vibrating reed in which a central portion of a vibrating portion is thinned and an exciting electrode is formed in a central portion of the vibrating portion, at least the exciting electrode is formed. The central part of the vibrating part is immersed in an anodic oxide solution, a DC voltage is supplied to the excitation electrode to form an anodic oxide film on the excitation electrode, and an AC voltage is supplied to the excitation electrode to vibrate the vibration part. And measuring the vibration frequency and repeating the formation of the anodic oxide film and the measurement of the vibration frequency until the measured vibration frequency reaches a predetermined value.

【0014】この請求項2の発明では、振動部の振動が
所定の振動周波数よりも高くなるように予め作製してお
いた圧電振動片の励振電極上の一部に、陽極酸化膜を所
定の厚さで成膜しては、振動部の振動周波数を測定して
目的とする振動周波数と比較するようにしている。この
ため、高精度の振動周波数を有する圧電振動片を製造す
ることができる。
According to the second aspect of the present invention, an anodic oxide film is provided on a part of the excitation electrode of the piezoelectric vibrating piece which has been prepared in advance so that the vibration of the vibrating part is higher than a predetermined vibration frequency. After the film is formed to have a thickness, the vibration frequency of the vibrating part is measured and compared with the target vibration frequency. For this reason, a piezoelectric vibrating reed having a highly accurate vibration frequency can be manufactured.

【0015】請求項3の発明は、振動部の中央部が薄板
化され、前記振動部に励振電極が形成された圧電振動片
の製造装置において、前記圧電振動片を浸漬するための
陽極酸化液を貯留する貯留部と、前記励振電極に直流電
圧を供給する電源部と、前記振動部の振動周波数を測定
する測定部と、前記電源部の前記励振電極との接続端子
と前記測定部の前記励振電極との接続端子を切り換える
切換部と、前記測定部の測定信号にしたがって前記切換
部の切換を制御する制御部とを備え、前記測定部により
前記振動部の振動周波数を測定しつつ前記電源部により
少なくとも前記励振電極上の一部に陽極酸化膜を成膜す
ることを特徴とする圧電振動片の製造装置である。
According to a third aspect of the present invention, there is provided an apparatus for manufacturing a piezoelectric vibrating reed in which a central portion of a vibrating portion is thinned and an excitation electrode is formed on the vibrating portion, wherein an anodizing solution for immersing the piezoelectric vibrating reed is provided. A storage unit that stores a DC voltage to the excitation electrode, a measurement unit that measures a vibration frequency of the vibration unit, a connection terminal of the excitation electrode of the power supply unit, and the measurement unit. A switching unit that switches a connection terminal with an excitation electrode; and a control unit that controls switching of the switching unit in accordance with a measurement signal of the measuring unit. A piezoelectric vibrating reed manufacturing apparatus, wherein an anodic oxide film is formed on at least a part of the excitation electrode by a part.

【0016】この請求項3の発明では、圧電振動片の励
振電極上の一部に、陽極酸化膜を所定の厚さで成膜して
は、振動部の振動周波数を測定する処理を切換部により
簡易に行うことができる。このため、製造効率を向上さ
せ、製造コストを低減させることができる。
According to the third aspect of the present invention, an anodic oxide film having a predetermined thickness is formed on a part of the excitation electrode of the piezoelectric vibrating reed, and the process of measuring the vibration frequency of the vibrating portion is switched. Can be easily performed. For this reason, manufacturing efficiency can be improved and manufacturing cost can be reduced.

【0017】請求項4の発明は、請求項3に記載の構成
において、前記制御部が、前記測定部による測定振動周
波数が所定値になるまで前記切換部による切換を繰り返
す圧電振動片の製造装置である。
According to a fourth aspect of the present invention, in the configuration according to the third aspect, the control unit repeats the switching by the switching unit until the vibration frequency measured by the measuring unit reaches a predetermined value. It is.

【0018】この請求項4の発明では、測定部により振
動部の振動周波数を測定しつつ電源部により少なくとも
励振電極上の一部に陽極酸化膜を成膜する処理を、測定
振動周波数が所定値になるまで制御部により自動的に行
うことができる。このため、製造効率をさらに向上さ
せ、製造コストをより低減させることができる。
According to the fourth aspect of the present invention, the process of forming the anodic oxide film on at least a part of the excitation electrode by the power supply unit while measuring the vibration frequency of the vibrating unit by the measuring unit is performed by setting the measured vibration frequency to a predetermined value Can be automatically performed by the control unit until. Therefore, the manufacturing efficiency can be further improved, and the manufacturing cost can be further reduced.

【0019】[0019]

【発明の実施の形態】以下、本発明の好適な実施の形態
を図面に基づいて説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings.

【0020】図1(A)、(B)は、本発明の圧電振動
片の実施形態である逆メサ型圧電振動片を示す斜視図及
びそのA−A線断面図である。
FIGS. 1A and 1B are a perspective view showing an inverted-mesa type piezoelectric vibrating piece which is an embodiment of the piezoelectric vibrating piece of the present invention, and a cross-sectional view taken along line AA.

【0021】この逆メサ型圧電振動片30は、矩形板状
の振動部31の中央部のみが薄く加工され、外周部が厚
く加工されている。そして、振動部31の中央部の表裏
面には励振電極32が形成され、外周部の一端には各励
振電極32に通電するための引き出し電極33が形成さ
れている。そして、励振電極32上には、振動部31の
振動周波数を測定しつつ成膜した陽極酸化膜34が形成
されている。
In the inverted-mesa type piezoelectric vibrating piece 30, only the central portion of the vibrating portion 31 having a rectangular plate shape is processed to be thin, and the outer peripheral portion is processed to be thick. Excitation electrodes 32 are formed on the front and back surfaces of the central portion of the vibrating portion 31, and a lead electrode 33 for energizing each excitation electrode 32 is formed on one end of the outer peripheral portion. An anodic oxide film 34 is formed on the excitation electrode 32 while measuring the vibration frequency of the vibration part 31.

【0022】振動部31は、例えば水晶で作成されてい
るが、他に例えばニオブ酸リチウム(LiNbO3 )
やチタン酸ジルコン酸鉛(PZT:Pb(ZrTi)O
3)等で作成してもよい。励振電極32及び引き出し電
極33は、例えばアルミニウム(Al)が成膜されてい
るが、他に例えば銅(Cu)が0.1重量%含まれたA
l等で成膜してもよい。陽極酸化膜34は、電解質水溶
液中におけるアノードの金属表面の酸化物が不働態化し
た皮膜であればよく、例えば酸化アルミニウム(Al2
O3 )で成膜されている。
The vibrating section 31 is made of, for example, quartz, but may be made of, for example, lithium niobate (LiNbO 3).
And lead zirconate titanate (PZT: Pb (ZrTi) O
3) or the like. The excitation electrode 32 and the extraction electrode 33 are formed of, for example, aluminum (Al), and are further formed of, for example, A containing 0.1% by weight of copper (Cu).
1 and the like. The anodic oxide film 34 may be any film in which an oxide on the metal surface of the anode in the aqueous electrolyte solution is passivated.
O3).

【0023】この逆メサ型圧電振動片30は、陽極酸化
膜34を振動部31に徐徐に積み上げて厚みを増加させ
ると共に、振動部31の振動周波数を積み上げの度に測
定して作製した圧電振動片であるので、振動部31の振
動周波数を所定値に正確に合わせることができる。さら
に、振動部31の振動周波数の調整は陽極酸化膜34の
積み上げのみにより行っているので、振動周波数の調整
量を大きく採ることができる。
The inverted-mesa type piezoelectric vibrating piece 30 is formed by gradually stacking the anodic oxide film 34 on the vibrating portion 31 to increase the thickness, and measuring the vibration frequency of the vibrating portion 31 every time the piezoelectric vibrating portion 31 is stacked. Since it is a piece, the vibration frequency of the vibration part 31 can be accurately adjusted to a predetermined value. Further, since the adjustment of the vibration frequency of the vibration section 31 is performed only by stacking the anodic oxide films 34, the adjustment amount of the vibration frequency can be large.

【0024】図2〜図8は、本発明の圧電振動片の製造
方法の実施形態を示す工程図である。
FIGS. 2 to 8 are process diagrams showing an embodiment of the method for manufacturing a piezoelectric vibrating reed according to the present invention.

【0025】先ず、サイズが30mm×30mm×0.
1mmの水晶で成るATカット基板(35度15分 回
転Y板)21を用意して表面をポリッシュ仕上げする
(図2(A))。そして、このATカット基板21の両
面にCrを厚さ0.05μmとなるまでスパッタリング
あるいは蒸着してCr膜22を成膜し、さらにAuを厚
さ0.1μmとなるまでスパッタリングあるいは蒸着し
てAu膜23を成膜してフッ酸の耐蝕膜とする(図2
(B))。そして、Au膜23の表面にフォトレジスト
を塗布し乾燥させてフォトレジスト膜24を成膜する
(図2(C))。
First, the size is 30 mm × 30 mm × 0.
An AT-cut substrate (a Y-plate rotated at 35 ° 15 minutes) 21 made of 1 mm crystal is prepared and its surface is polished (FIG. 2A). Then, Cr is sputtered or vapor-deposited on both sides of the AT-cut substrate 21 to a thickness of 0.05 μm to form a Cr film 22, and Au is further sputtered or vapor-deposited to a thickness of 0.1 μm to form Au. The film 23 is formed into a corrosion-resistant film of hydrofluoric acid (FIG. 2)
(B)). Then, a photoresist is applied to the surface of the Au film 23 and dried to form a photoresist film 24 (FIG. 2C).

【0026】次に、フォトレジスト膜24上に振動部3
1の外形を形成するためのエッチングパターンが描画さ
れたフォトマスク25を配置し、紫外線で露光してフォ
トマスク25のエッチングパターンをフォトレジスト膜
24に転写する(図2(D))。そして、フォトレジス
ト膜24の感光部分を現像液で現像して除去し、Au膜
23を露出させる(図2(E))。
Next, the vibrating portion 3 is formed on the photoresist film 24.
A photomask 25 on which an etching pattern for forming the outer shape 1 is drawn is arranged, and is exposed to ultraviolet rays to transfer the etching pattern of the photomask 25 to the photoresist film 24 (FIG. 2D). Then, the photosensitive portion of the photoresist film 24 is developed and removed with a developing solution to expose the Au film 23 (FIG. 2E).

【0027】次に、露出したAu膜23を例えばヨウ素
(I2 )とヨウ化カリウム(KI)の水溶液で成るA
u用のエッチング液でエッチングし、Cr膜22を露出
させ、さらに露出したCr膜22をCr用のエッチング
液でエッチングし、ATカット基板21を露出させる
(図3(A))。そして、残存しているフォトレジスト
膜24を剥離する(図3(B))。続いて、露出したA
Tカット基板21と残存しているCr膜22、Au膜2
3を全て覆うようにフォトレジストを再度塗布し乾燥さ
せてフォトレジスト膜26を成膜する(図3(C))。
Next, the exposed Au film 23 is made of an aqueous solution of, for example, iodine (I2) and potassium iodide (KI).
The Cr film 22 is exposed by etching with an etching solution for u, and the exposed Cr film 22 is further etched with an etching solution for Cr to expose the AT cut substrate 21 (FIG. 3A). Then, the remaining photoresist film 24 is stripped (FIG. 3B). Then, exposed A
T-cut substrate 21 and remaining Cr film 22 and Au film 2
Then, a photoresist is applied again so as to cover all the layers 3 and dried to form a photoresist film 26 (FIG. 3C).

【0028】次に、フォトレジスト膜26上に振動部3
1の形状を形成するためのエッチングパターンが描画さ
れたフォトマスク27を配置し、紫外線で露光してフォ
トマスク27のエッチングパターンをフォトレジスト膜
26に転写する(図3(D))。そして、フォトレジス
ト膜26の感光部分を現像液で現像して除去し、ATカ
ット基板21及びAu膜23を露出させる(図4
(A))。
Next, the vibrating portion 3 is formed on the photoresist film 26.
A photomask 27 on which an etching pattern for forming the shape 1 is drawn is arranged, and is exposed to ultraviolet rays to transfer the etching pattern of the photomask 27 to the photoresist film 26 (FIG. 3D). Then, the exposed portion of the photoresist film 26 is developed and removed with a developing solution to expose the AT cut substrate 21 and the Au film 23 (FIG. 4).
(A)).

【0029】次に、露出したATカット基板21を例え
ばフッ化水素酸(HF)とフッ化アンモニウム(NH4
F)が1:1の混合液(緩衝フッ酸)で成る水晶用の
エッチング液を50°Cにして1時間エッチングし、サ
イズが3mm×2mmの振動部31を形成する(図4
(B))。一方、露出したAu膜23を上述したAu用
のエッチング液でエッチングし、Cr膜22を露出さ
せ、さらに露出したCr膜22を上述したCr用のエッ
チング液でエッチングし、ATカット基板21を露出さ
せる(図4(C))。
Next, the exposed AT-cut substrate 21 is made of, for example, hydrofluoric acid (HF) and ammonium fluoride (NH 4).
F) is a 1: 1 mixed solution (buffered hydrofluoric acid) for a crystal etching solution at 50 ° C., and is etched for 1 hour to form a vibrating portion 31 having a size of 3 mm × 2 mm (FIG. 4).
(B)). On the other hand, the exposed Au film 23 is etched with the above-described etching solution for Au to expose the Cr film 22, and the exposed Cr film 22 is etched with the above-described etching solution for Cr to expose the AT cut substrate 21. (FIG. 4C).

【0030】次に、露出したATカット基板21を上述
した水晶用のエッチング液でハーフエッチングし、振動
部31の中央部を厚さ8μmに形成する(図4
(D))。そして、残存しているフォトレジスト膜26
とCr膜22、Au膜23を剥離する。これにより、複
数の振動部31が完成する(図4(E))。このときの
振動部31の厚さは、目的とする振動周波数よりも高く
なるように予め薄く作製されている。
Next, the exposed AT-cut substrate 21 is half-etched with the above-described etching solution for quartz to form a central portion of the vibrating portion 31 to a thickness of 8 μm (FIG. 4).
(D)). Then, the remaining photoresist film 26
Then, the Cr film 22 and the Au film 23 are peeled off. Thus, the plurality of vibrating sections 31 are completed (FIG. 4E). At this time, the thickness of the vibrating part 31 is made thinner in advance so as to be higher than the target vibration frequency.

【0031】次に、振動部31の両面上に励振電極32
及び引き出し電極33を形成するための電極パターンが
描画されたマスク28を配置し(図5(A))、振動部
31の両面にAlを厚さ300nmとなるまでスパッタ
リングしてAl膜を成膜して励振電極32及び引き出し
電極33とする(図5(B))。
Next, the excitation electrodes 32 are provided on both surfaces of the vibrating section 31.
Then, a mask 28 on which an electrode pattern for forming the extraction electrode 33 is drawn is arranged (FIG. 5A), and Al is formed on both surfaces of the vibrating part 31 by sputtering until the thickness becomes 300 nm. Thus, the excitation electrode 32 and the extraction electrode 33 are formed (FIG. 5B).

【0032】次に、図6に示すような製造装置40を用
いて振動部31の振動周波数を測定しつつ励振電極32
上に陽極酸化膜34を成膜する。このときのAl2 O
3で成る陽極酸化膜34は、Alで成る励振電極32に
対し重量が重くなるので、陽極酸化膜34の厚みが厚く
なればなるほど、振動部31の振動周波数は低くなって
いく。
Next, while measuring the vibration frequency of the vibrating section 31 using a manufacturing apparatus 40 as shown in FIG.
An anodic oxide film 34 is formed thereon. Al2O at this time
Since the weight of the anodic oxide film 34 made of No. 3 is larger than that of the excitation electrode 32 made of Al, the vibration frequency of the vibrating part 31 decreases as the thickness of the anodic oxide film 34 increases.

【0033】この圧電振動片の製造装置40は、圧電振
動片30を浸漬するための陽極酸化液41を貯留する貯
留部42、励振電極32に直流電圧を供給する電源部4
3、振動部31の振動周波数を測定する測定部44、電
源部43の励振電極32との負接続端子43a、正接続
端子43bと測定部44の励振電極32との各接続端子
44a、44bを切り換える切換部45、測定部44の
測定信号にしたがって切換部45の切換を制御する制御
部46を備えている。
The apparatus 40 for manufacturing a piezoelectric vibrating reed comprises a storage section 42 for storing an anodic oxidizing solution 41 for immersing the piezoelectric vibrating piece 30 and a power supply section 4 for supplying a DC voltage to the excitation electrode 32.
3. The measuring unit 44 for measuring the vibration frequency of the vibrating unit 31, the negative connection terminal 43a of the power supply unit 43 with the excitation electrode 32, and the connection terminals 44a and 44b of the positive connection terminal 43b with the excitation electrode 32 of the measurement unit 44. A switching section 45 for switching and a control section 46 for controlling switching of the switching section 45 in accordance with a measurement signal of the measuring section 44 are provided.

【0034】このような構成の製造装置40の貯留部4
2内に貯留されている陽極酸化液41に、少なくとも励
振電極32が形成されている振動部31の中央部及び負
極棒47を浸漬する。この陽極酸化液41としては、例
えばリン酸二水素アンモニウム(NH4 H2 PO4
)とリン酸水素二アンモニウム((NH4 )2HP
O4 )の混合液が用いられる。負極棒47としては、
例えば白金(Pt)で成る棒が用いられる。そして、各
励振電極32と切換部45の各接続端子45a、45b
とを結線すると共に、負極棒47と電源部43の負接続
端子43aとを結線する。
The storage unit 4 of the manufacturing apparatus 40 having such a configuration is described.
At least the central portion of the vibrating portion 31 where the excitation electrode 32 is formed and the negative electrode bar 47 are immersed in the anodic oxidizing solution 41 stored in the inside 2. As the anodizing solution 41, for example, ammonium dihydrogen phosphate (NH4H2PO4)
) And diammonium hydrogen phosphate ((NH4) 2HP
O4) is used. As the negative electrode rod 47,
For example, a rod made of platinum (Pt) is used. Then, each excitation electrode 32 and each connection terminal 45a, 45b of the switching unit 45
And the negative electrode rod 47 and the negative connection terminal 43a of the power supply unit 43 are connected.

【0035】次に、制御部46は、図7に示すように、
切換部45を操作して切換部45の各接続端子45a、
45bと電源部43の負接続端子43a、正接続端子4
3bとを接続する。これにより、各励振電極32には電
源部43から例えば60Vの直流電圧が供給され、各励
振電極32上には陽極酸化膜34が成膜されていくこと
になる。
Next, the control unit 46, as shown in FIG.
By operating the switching unit 45, each connection terminal 45a of the switching unit 45,
45b, the negative connection terminal 43a of the power supply unit 43, and the positive connection terminal 4
3b. As a result, a DC voltage of, for example, 60 V is supplied from the power supply unit 43 to each excitation electrode 32, and the anodic oxide film 34 is formed on each excitation electrode 32.

【0036】そして、制御部46は、この直流電圧の供
給が所定時間経過したら、図8に示すように、切換部4
5を操作して切換部45の各接続端子45a、45bと
測定部44の各接続端子44a、44bとを接続する。
これにより、各励振電極32には測定部44から交流電
圧が供給されて振動部31を振動させることになるの
で、測定部44はそのときの振動周波数を測定する。
When the supply of the DC voltage has passed for a predetermined time, the control unit 46 switches the switching unit 4 as shown in FIG.
5 is operated to connect the connection terminals 45a and 45b of the switching unit 45 to the connection terminals 44a and 44b of the measurement unit 44.
As a result, the AC voltage is supplied from the measuring unit 44 to each excitation electrode 32 to vibrate the vibrating unit 31, and the measuring unit 44 measures the vibration frequency at that time.

【0037】ここで、直流電圧の供給時間が短すぎる
と、陽極酸化液41により各励振電極32間が通電して
しまい、振動周波数を測定できない場合があるため、振
動周波数の測定タイミングは、陽極酸化膜34がある程
度成膜された後、例えば直流電圧の供給が5sec〜1
0sec経過した後がよい。
Here, if the supply time of the DC voltage is too short, current flows between the excitation electrodes 32 due to the anodic oxidizing liquid 41, and the vibration frequency may not be measured. After the oxide film 34 is formed to some extent, for example, the supply of DC voltage is 5 sec to 1 sec.
It is better after 0 seconds have elapsed.

【0038】そして、制御部46は、測定部44から測
定振動周波数を読み出し、予め記憶されている目的とす
る振動周波数と比較し、測定振動周波数が目的振動周波
数に達していないときは、図7に示すように、切換部4
5を操作して切換部45の各接続端子45a、45bと
電源部43の負接続端子43a、正接続端子43bとを
再度接続し、陽極酸化膜34を再度成膜させる。このよ
うに、制御部46は、測定振動周波数が所定値になるま
で陽極酸化膜34の形成と振動周波数の測定を繰り返
し、最終的な逆メサ型圧電振動片30とする。
Then, the control section 46 reads the measured vibration frequency from the measuring section 44 and compares it with the target vibration frequency stored in advance. When the measured vibration frequency does not reach the target vibration frequency, As shown in FIG.
5, the connection terminals 45a and 45b of the switching unit 45 are connected again to the negative connection terminal 43a and the positive connection terminal 43b of the power supply unit 43, and the anodic oxide film 34 is formed again. As described above, the control unit 46 repeats the formation of the anodic oxide film 34 and the measurement of the vibration frequency until the measured vibration frequency reaches the predetermined value, thereby obtaining the final inverted mesa type piezoelectric vibrating piece 30.

【0039】尚、このときの電源部43による直流電圧
の供給時間、即ち陽極酸化時間(sec)と測定部44
による測定振動周波数(MHz)との関係は、電源部4
3による供給直流電圧が30Vのときは図9の黒丸に示
すように緩やかであるが、電源部43による供給直流電
圧が60Vのときは図9の黒四角に示すように急峻とな
る。よって、陽極酸化時間(sec)の短縮化及び振動
周波数調整の高精度化を図る場合は、初期段階では供給
直流電圧を高くし、最終段階では供給直流電圧を低くし
て行うようにすればよい。
At this time, the supply time of the DC voltage by the power supply unit 43, that is, the anodic oxidation time (sec) and the measurement unit 44
The relationship with the vibration frequency (MHz) measured by
When the DC voltage supplied by the power supply unit 3 is 30 V, the voltage is gentle as shown by a black circle in FIG. 9, but when the DC voltage supplied by the power supply unit 43 is 60 V, the voltage becomes steep as shown by a black square in FIG. Therefore, when shortening the anodic oxidation time (sec) and increasing the accuracy of the vibration frequency adjustment are performed, the supply DC voltage may be increased in the initial stage and the supply DC voltage may be decreased in the final stage. .

【0040】このように、振動部31の振動が所定の振
動周波数よりも高くなるように予め作製しておいた逆メ
サ型圧電振動片30の励振電極32上の一部に、陽極酸
化膜34を所定の厚さで成膜しては、振動部31の振動
周波数を測定して目的とする振動周波数と比較するよう
にしている。このため、高精度の振動周波数を有する逆
メサ型圧電振動片30を製造することができる。
As described above, the anodic oxide film 34 is provided on a part of the excitation electrode 32 of the inverted mesa type piezoelectric vibrating piece 30 which has been manufactured in advance so that the vibration of the vibrating part 31 is higher than the predetermined vibration frequency. Is formed with a predetermined thickness, and the vibration frequency of the vibration section 31 is measured and compared with the target vibration frequency. Therefore, it is possible to manufacture the inverted-mesa type piezoelectric vibrating piece 30 having a high-precision vibration frequency.

【0041】また、逆メサ型圧電振動片30の励振電極
32上の一部に、陽極酸化膜34を所定の厚さで成膜し
ては、振動部31の振動周波数を測定する処理を切換部
45により簡易に行うことができるうえ、測定振動周波
数が所定値になるまで制御部46により自動的に行うこ
とができる。このため、製造効率を向上させ、製造コス
トを低減させることができる。
An anodic oxide film 34 having a predetermined thickness is formed on a part of the excitation electrode 32 of the inverted mesa type piezoelectric vibrating piece 30, and the process for measuring the vibration frequency of the vibration section 31 is switched. The control can be easily performed by the control unit 46 until the measured vibration frequency reaches a predetermined value. For this reason, manufacturing efficiency can be improved and manufacturing cost can be reduced.

【0042】[0042]

【発明の効果】以上のように、本発明によれば、陽極酸
化膜を振動部に徐徐に積み上げて厚みを増加させると共
に、振動部の振動周波数を積み上げの度に測定している
ので、振動部の振動周波数の調整量を大きく採って所定
値に正確に合わせることができ、高精度な圧電振動片と
することができる。
As described above, according to the present invention, the thickness of the anodic oxide film is gradually increased on the vibrating portion to increase the thickness, and the vibration frequency of the vibrating portion is measured each time the vibration is accumulated. A large amount of adjustment of the vibration frequency of the part can be taken to be precisely adjusted to a predetermined value, and a highly accurate piezoelectric vibrating reed can be obtained.

【0043】また、陽極酸化膜を所定の厚さで成膜して
は、振動部の振動周波数を測定して目的とする振動周波
数と比較するようにしているので、高精度の振動周波数
を有する圧電振動片を製造することができ、さらにこれ
らの処理を切換部により簡易に行うと共に制御部により
自動的に行うことができるので、製造効率を向上させ、
製造コストを低減させることができる。
Since the anodic oxide film is formed with a predetermined thickness, the vibration frequency of the vibrating portion is measured and compared with the target vibration frequency. The piezoelectric vibrating reed can be manufactured, and furthermore, these processes can be easily performed by the switching unit and automatically performed by the control unit.
Manufacturing costs can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の圧電振動片の実施形態である逆メサ型
圧電振動片を示す斜視図及びそのA−A線断面図。
FIG. 1 is a perspective view showing an inverted mesa type piezoelectric vibrating reed which is an embodiment of the piezoelectric vibrating reed of the present invention, and a cross-sectional view taken along line AA of FIG.

【図2】本発明の圧電振動片の製造方法の実施形態を示
す第1の工程図。
FIG. 2 is a first process chart showing an embodiment of a method of manufacturing a piezoelectric vibrating reed according to the present invention.

【図3】本発明の圧電振動片の製造方法の実施形態を示
す第2の工程図。
FIG. 3 is a second process diagram showing an embodiment of the method of manufacturing a piezoelectric vibrating reed according to the present invention.

【図4】本発明の圧電振動片の製造方法の実施形態を示
す第3の工程図。
FIG. 4 is a third process chart showing an embodiment of the method for manufacturing a piezoelectric vibrating reed according to the present invention.

【図5】本発明の圧電振動片の製造方法の実施形態を示
す第4の工程図。
FIG. 5 is a fourth process chart showing an embodiment of the method for manufacturing a piezoelectric vibrating reed according to the present invention.

【図6】本発明の圧電振動片の製造装置の実施形態を用
いた製造方法の実施形態を示す第5の工程図。
FIG. 6 is a fifth process chart showing an embodiment of a manufacturing method using the embodiment of the apparatus for manufacturing a piezoelectric vibrating reed according to the present invention.

【図7】本発明の圧電振動片の製造方法の実施形態を示
す第6の工程図。
FIG. 7 is a sixth process chart showing an embodiment of the method for manufacturing a piezoelectric vibrating reed according to the present invention.

【図8】本発明の圧電振動片の製造方法の実施形態を示
す第7の工程図。
FIG. 8 is a seventh process chart showing an embodiment of the method for manufacturing a piezoelectric vibrating reed according to the present invention.

【図9】本発明の圧電振動片の製造方法におけるドライ
エッチング装置によるエッチング時間(sec)と振動
周波数測定装置による測定振動周波数変化(MHz)と
の関係を示す図。
FIG. 9 is a diagram showing a relationship between an etching time (sec) by a dry etching device and a change in vibration frequency (MHz) measured by a vibration frequency measurement device in the method of manufacturing a piezoelectric vibrating reed according to the present invention.

【図10】従来の逆メサ型圧電振動片の一例を示す斜視
図及びそのA−A線断面図。
FIG. 10 is a perspective view showing an example of a conventional inverted-mesa type piezoelectric vibrating reed, and a cross-sectional view taken along line AA thereof.

【符号の説明】[Explanation of symbols]

10、30 逆メサ型圧電振動片 11、31 振動部 12、32 励振電極 13、33 接続電極 34 陽極酸化膜 21 ATカット基板 22 Cr膜 23 Au膜 24、26 フォトレジスト膜 25、27 フォトマスク 28 マスク 40 圧電振動片の製造装置 41 陽極酸化液 42 貯留部 43 電源部 43a 負接続端子 43b 正接続端子 44 周波数測定部 44a、44b 接続端子 45 切換部 45a、45b 接続端子 46 制御部 47 負極棒 10, 30 Inverted mesa type piezoelectric vibrating piece 11, 31 Vibrating part 12, 32 Exciting electrode 13, 33 Connecting electrode 34 Anodized film 21 AT cut substrate 22 Cr film 23 Au film 24, 26 Photoresist film 25, 27 Photomask 28 Mask 40 Piezoelectric vibrating reed manufacturing apparatus 41 Anodizing solution 42 Storage unit 43 Power supply unit 43a Negative connection terminal 43b Positive connection terminal 44 Frequency measurement unit 44a, 44b Connection terminal 45 Switching unit 45a, 45b Connection terminal 46 Control unit 47 Negative rod

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 中央部が薄板化された振動部と、前記振
動部に形成された励振電極とを備えた圧電振動片におい
て、 前記励振電極上に陽極酸化膜が形成されてなることを特
徴とする圧電振動片。
1. A piezoelectric vibrating reed comprising a vibrating portion having a thinned central portion and an exciting electrode formed on the vibrating portion, wherein an anodic oxide film is formed on the exciting electrode. Piezoelectric vibrating reed.
【請求項2】 振動部の中央部が薄板化され、前記振動
部の中央部に励振電極が形成された圧電振動片の製造方
法において、 少なくとも前記励振電極が形成されている前記振動部の
中央部を陽極酸化液に浸漬し、 前記励振電極に直流電圧を供給して前記励振電極上に陽
極酸化膜を形成し、 前記励振電極に交流電圧を供給し前記振動部を振動させ
て振動周波数を測定し、 前記測定振動周波数が所定値になるまで前記陽極酸化膜
の形成と前記振動周波数の測定を繰り返すことを特徴と
する圧電振動片の製造方法。
2. A method for manufacturing a piezoelectric vibrating reed in which a central portion of a vibrating portion is thinned and an exciting electrode is formed in a central portion of the vibrating portion, wherein at least a center of the vibrating portion on which the exciting electrode is formed. The part is immersed in an anodizing solution, a DC voltage is supplied to the excitation electrode to form an anodic oxide film on the excitation electrode, and an AC voltage is supplied to the excitation electrode to vibrate the vibrating part to reduce the vibration frequency. Measuring the vibration frequency until the measured vibration frequency reaches a predetermined value, and repeating the measurement of the vibration frequency.
【請求項3】 振動部の中央部が薄板化され、前記振動
部に励振電極が形成された圧電振動片の製造装置におい
て、 前記圧電振動片を浸漬するための陽極酸化液を貯留する
貯留部と、 前記励振電極に直流電圧を供給する電源部と、 前記振動部の振動周波数を測定する測定部と、 前記電源部の前記励振電極との接続端子と前記測定部の
前記励振電極との接続端子を切り換える切換部と、 前記測定部の測定信号にしたがって前記切換部の切換を
制御する制御部とを備え、 前記測定部により前記振動部の振動周波数を測定しつつ
前記電源部により少なくとも前記励振電極上に陽極酸化
膜を成膜することを特徴とする圧電振動片の製造装置。
3. A manufacturing apparatus for a piezoelectric vibrating reed in which a central part of a vibrating part is thinned and an excitation electrode is formed on the vibrating part, wherein a storage part for storing an anodic oxidizing liquid for immersing the piezoelectric vibrating reed. A power supply unit that supplies a DC voltage to the excitation electrode; a measurement unit that measures a vibration frequency of the vibration unit; and a connection terminal between the excitation electrode of the power supply unit and the excitation electrode of the measurement unit. A switching unit for switching a terminal; and a control unit for controlling switching of the switching unit in accordance with a measurement signal of the measuring unit, wherein the measuring unit measures a vibration frequency of the vibrating unit, and the power supply unit measures at least the excitation. An apparatus for manufacturing a piezoelectric vibrating reed, wherein an anodic oxide film is formed on an electrode.
【請求項4】 前記制御部が、前記測定部による測定振
動周波数が所定値になるまで前記切換部による切換を繰
り返す請求項3に記載の圧電振動片の製造装置。
4. The apparatus according to claim 3, wherein the control unit repeats switching by the switching unit until the vibration frequency measured by the measuring unit reaches a predetermined value.
JP2000062306A 2000-03-07 2000-03-07 Piezoelectric vibrating reed, its manufacture and its device Withdrawn JP2001251156A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005204253A (en) * 2004-01-19 2005-07-28 Toyo Commun Equip Co Ltd Uhf band fundamental wave at cut crystal oscillating element
JP2010110019A (en) * 2010-02-15 2010-05-13 Epson Toyocom Corp Method of manufacturing uhf band fundamental wave at cut crystal vibration element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005204253A (en) * 2004-01-19 2005-07-28 Toyo Commun Equip Co Ltd Uhf band fundamental wave at cut crystal oscillating element
JP2010110019A (en) * 2010-02-15 2010-05-13 Epson Toyocom Corp Method of manufacturing uhf band fundamental wave at cut crystal vibration element

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