JP2001250891A - Semiconductor sealing resin, and method and device for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor element sealing resin comprising fluidity suitable for molding and excellent mechanical strength after molding, related to a semiconductor device and its manufacturing method. SOLUTION: The sealing resin comprises a silanol radical of 0.001-10 mmol/g on its surface and silica powder whose particle size is 0.01-200 μm.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a leadless surface-mount type and resin-sealed type semiconductor device and a method of manufacturing the same. It relates to a sealing material to be used.

[0002]

2. Description of the Related Art Semiconductor devices and the like need to be shielded from external adverse environmental conditions and mechanically protected. In particular,
In order to eliminate the effects of various vibrations, shocks, dust, moisture, atmospheric gas, and the like, various sealing methods and sealing materials are used.

In recent years, the pitch of leads provided in a resin-sealed semiconductor device tends to be narrower due to the miniaturization of electronic equipment. Therefore, in a resin-sealed semiconductor device, a new structure and a material for forming the semiconductor device are required.

FIGS. 1A, 1B and 1C respectively show:
1 shows a cross-sectional view, an internal plan view, and a plan view of a conventional resin-encapsulated semiconductor device. Referring to FIG. 1A, reference numeral 11 denotes a resin, 1
2 denotes a semiconductor element, 13 denotes an outer lead, 14 denotes a bonding wire, and 15 denotes a die stage. This semiconductor device has a package structure called SSOP (Shrink Small Outline Package).
Are bent in a gull-wing shape and mounted on a substrate. In the SSOP type semiconductor device shown in FIG. 1, the area of the routing portion 19 from the inner lead 18 to the outer lead 13 shown in the resin 1 and the area occupied by the outer lead 13 itself are large, and the mounting area is large. There was a problem.

As a semiconductor device which can solve the above problems, Japanese Patent Application Laid-Open No. Hei 9-162348 has been proposed. FIG.
Shows a semiconductor device 20 according to the above application. FIG.
Referring to FIG. 1, a semiconductor device 20 includes a semiconductor element 21,
It has a very simple structure composed of a resin package 22 and a metal layer 23 and the like, and is characterized in that a metal film 23 is formed on a resin projection 27 integrally formed on a mounting surface 26 of the resin package 22. I have. The semiconductor device 20 having the above configuration does not require the inner lead and the outer lead as in the conventional SSOP, and does not require the area for routing from the inner lead to the outer lead and the area of the outer lead itself. The size can be reduced.

A conventional BGA (Ball Grid Array)
Since it is not necessary to use a mounting substrate to form such solder balls, the cost of the semiconductor device 20 can be reduced. Further, the resin protrusion 27 and the metal film 23
Have the same function as the solder bumps of the BGA type semiconductor device in cooperation with each other, so that the mountability can be improved.

In order to manufacture the semiconductor device 20, first, a concave portion is formed at a position corresponding to the position where the resin protrusion 27 is formed, and a lead frame having a metal film 23 formed in the concave portion is prepared. Next, a wire 28 is provided between the lead frame and the metal film 23 on which the semiconductor element 21 is mounted, and the resin package 22 is formed thereon. Since the semiconductor device 20 is a semiconductor device that does not use leads for the purpose of size reduction, the lead frame is removed later. At this time, since the semiconductor device 20 forms the resin package 22 for each semiconductor element 21, when the lead frame is removed, the resin package 22 (the semiconductor device 20) that was in an aligned state before the removal was removed. ) Will fall apart. In the state in which the resin packages 22 are separated as described above, handling in the next step becomes inconvenient, and the manufacturing efficiency is reduced. Therefore, a process for aligning the resin packages is required.

As a specific example of the above-mentioned alignment processing, there is a method in which a gate is left when the resin package 22 is formed, and the gate keeps the alignment state of the resin package 22 even after the lead frame is removed. A method of keeping the alignment of the resin package 22 even after the lead frame is removed with the adhesive tape is considered.

In the above method, before the semiconductor device is completed, a step of finally removing the gate is required, equipment for cutting the gate is required, and the manufacturing process is complicated. is there. Further, there is also a problem that a large amount of resin is required for the gate and the resin yield is low.

In the above method, a separate adhesive tape is required, the number of components is increased, and a step of removing the adhesive tape before the semiconductor device is completed is required, similarly to the above method. Would.

On the other hand, a test is performed to check whether the manufactured semiconductor device 20 operates properly and whether a predetermined reliability is maintained. This test is performed by connecting a contact pin to the metal film 23 of each semiconductor device 20.
When the resin package 22 (semiconductor device 20) is in a state of being individually scattered, it is difficult to connect the contact pins to each metal film 23 having a fine pitch, and there is also a problem that the test efficiency is poor.

In order to solve the above-mentioned problems, Japanese Patent Application No. Hei.
No. 315323 discloses a resin package for encapsulating a semiconductor element, a resin projection formed to project downward from a mounting surface of the resin package, a metal film provided on the resin projection, There has been proposed a package including a connection means for electrically connecting an electrode pad and the metal film. The diameter of the resin protrusion is φ0.
Since it is as fine as 1 to 0.8 mm, it may be damaged if it receives an external impact during handling or the like.

The metal film provided on the resin protrusion may be a two-layer film of silver (Ag) and palladium (Pd), a palladium (Pd) layer from an outer layer, a gold (Au) layer, or a gold (Au) layer from an outer layer. It is formed of a two-layer film of an Au) layer and a palladium (Pd) layer. These metal films may be peeled off due to thermal shock at the time of mounting or stress received from the motherboard after mounting.

Further, in recent years, with the demand for miniaturization of electronic devices and devices, miniaturization and high density of semiconductor devices have been attempted, and miniaturization has been achieved by bringing the shape of the semiconductor device as close as possible to a semiconductor element (chip). A semiconductor device having a so-called chip size package structure has been proposed. In addition, when the number of pins is increased due to the increase in density and the size of the semiconductor device is reduced, the pitch of the external connection terminals is reduced. For this reason, as a structure in which a relatively large number of external connection terminals can be formed in a small space, a bump electrode (bump) is used as the external connection terminal.
Is used. Against this background,
Japanese Patent Application Laid-Open No. Hei 10-79362 proposes chip size packaging at the wafer level. In the above-mentioned application, a wafer on which a plurality of semiconductor elements provided with protruding electrodes are formed is mounted in a cavity of a mold, and subsequently, a sealing resin is supplied to a position where the protruding electrodes are provided, so that the protruding electrodes are provided. And a resin sealing step of sealing the wafer with the sealing resin to form a resin layer. However, the sealing resin used in the above method has a drawback that the fluidity is slightly inferior, and there has been a problem that the resin is difficult to diffuse sufficiently uniformly during molding.

[0015]

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and has been made in consideration of the above-described problems, and is intended to improve a manufacturing efficiency and a testing efficiency in a semiconductor device. And an object of the present invention is to provide a highly reliable semiconductor device in which the molded sealing resin has good mechanical strength.

[0016]

According to the first aspect of the present invention, a semiconductor element, a resin package for sealing the semiconductor element, and a resin projection formed to project downward from a mounting surface of the resin package. And a metal film provided on the resin protrusion, and a connection means for electrically connecting an electrode pad on the semiconductor element and the metal film, wherein the sealing resin is Including an inorganic filler, and
The inorganic filler is characterized in that the semiconductor device contains silica powder having a silanol group on the surface.

According to a second aspect of the present invention, in the first aspect of the present invention, the amount of the silanol group in the silica powder having a silanol group on the surface is 0.001 mmol / g or more and 1 or more.
0 mmol / g or less.

According to a third aspect of the present invention, in the first or second aspect, the average particle diameter of the silica powder having a silanol group on the surface is φ0.01 μm or more and 200 μm or less.

According to a fourth aspect of the present invention, in the first aspect of the present invention, the inorganic filler contains silica powder having a silanol group on its surface and another type of inorganic filler. It is.

The invention of claim 5 is characterized in that, in the invention of claim 4, the other kind of inorganic filler is fused silica.

Each of the means described above operates as follows.

According to the semiconductor device of the first aspect of the present invention, the mechanical strength of the molded resin is reduced by including the inorganic filler containing silica powder having a silanol group on the surface in the sealing resin. Therefore, the semiconductor device is not damaged even when subjected to an external impact, and the reliability of the semiconductor device is improved.

According to the second aspect of the present invention, 0.001
By including a silica powder having an amount of silanol groups of not less than 10 mmol / g and not more than 10 mmol / g in the sealing resin, it shows good fluidity at the time of molding and the mechanical strength of the resin after molding. Can be improved.

According to the third aspect of the present invention, the average particle diameter of the silica powder having a silanol group on the surface is φ0.01 μm.
When it is not less than m and not more than 200 μm, the sealing resin exhibits good fluidity at the time of molding, and the mechanical strength of the resin after molding is improved.

According to the fourth aspect of the present invention, the inorganic filler contained in the sealing resin is a mixture of a silica powder having a silanol group on the surface thereof and another type of inorganic filler. It is possible to improve the mechanical strength of the encapsulating resin later.

According to the fifth aspect of the invention, the other type of inorganic filler according to the fourth aspect is fused silica, whereby the moisture resistance of the molding resin after molding is further improved, and the The reliability as a device is also improved.

[0027]

Embodiments of the present invention will be described below.

FIGS. 3 and 4 show a semiconductor device 30 according to the present invention. FIG. 3 is a cross-sectional view of the semiconductor device 30.
FIG. 4 is an enlarged view around the resin protrusion of the semiconductor device 30. The semiconductor device 30 is, roughly speaking, a semiconductor element 3
1, a resin package 32, and a metal film 33. The semiconductor element 31 has a configuration in which a plurality of electrode pads 34 are formed on an upper surface thereof and is mounted on an element fixing resin 35. The resin package 32 is formed, for example, by transfer molding epoxy resin (potting is also possible) as described later.
The resin package is then cut by a dicer, and the outer peripheral side surface of the resin package has a vertical cut surface 32a. At a predetermined position on the mounting surface 36, a resin protrusion 37 is integrally formed. The resin protrusion 37 is formed to project downward from the mounting surface 36 of the resin package 32. The arrangement pitch of the resin protrusions 37 can be, for example, about 0.8 mm.

Next, the metal film 33 is shown in FIGS.
This will be described with reference to FIG. FIG. 4 is an enlarged view of the vicinity of the position where the metal film 33 is provided. As described above, the metal film 33
This is a structure that is provided so as to cover the resin protrusion 37 and is electrically connected to the semiconductor element 31 by a wire 38. The metal layer 33 functions as an external connection terminal of the semiconductor device 30.

The metal film provided on the resin protrusion may be a two-layer film of silver (Ag) and palladium (Pd), a palladium (Pd) layer from an outer layer, a gold (Au) layer, or a gold (A) layer from an outer layer. It is formed of a two-layer film of an Au) layer and a palladium (Pd) layer.

As the inorganic filler contained in the sealing resin used in the present invention, it is particularly preferable to use silica powder having a silanol group on the surface. Silica having a silanol group on the surface is generally chemically synthesized by a sol-gel method. The silanol groups on the silica surface chemically react with the resin component in the sealing material to bond and crosslink. Therefore, the resin containing silica having a silanol group on the surface is hardened firmly, thereby improving the mechanical strength and preventing the resin protrusion from being damaged.

When the silanol group in the silica powder is 0.
It is desirable that the content be 001 mmol / g or more and 10 mmol / g or less. If the amount is less than 0.001 mmol / g, the effect does not appear. If the amount exceeds 10 mmol / g, the reaction with the resin proceeds rapidly, so that the storage stability as a sealing resin is poor, the hygroscopicity is high, and the reliability is high. Decrease.

The average particle size of the silica powder having a silanol group on the surface is φ0.01 μm to 200 μm, preferably 0.1 μm to 100 μm, and more preferably 1 μm to 20 μm.
It is desirable that it is not more than μm. If the diameter is less than 0.01 μm, the melt viscosity (viscosity in the case of a liquid resin) sharply rises, resulting in poor resin molding and poor adhesion to the semiconductor element. Therefore, the reliability of the package is reduced. On the other hand, when the diameter exceeds 200 μm, scratches are generated on the surface of the semiconductor element due to the fluidity of the resin during molding, and the semiconductor element is damaged. In addition, the maximum particle size is set to φ by classification.
150 μm or less, desirably φ75 μm or less,
It is desirable that the diameter be 20 μm.

As the inorganic filler, a silica powder having a silanol group on the surface and another type of inorganic filler may be mixed. As other inorganic filler, an insulating powder such as silica powder, alumina powder, silicon nitride, boron nitride, graphite, and aluminum nitride may be added, but in particular, silica powder is preferably used from the viewpoint of moisture resistance. desirable. Examples of the silica powder include fused silica, crystalline silica, and chemically synthesized silica. Particularly, fused silica is preferable. As the particle size of the other inorganic filler, like the silica powder having a silanol group, φ
It is preferably from 0.01 μm to φ200 μm. The mixing ratio when the silica powder having a silanol group on the surface is used in combination with the other inorganic filler is not particularly limited, but even if a small amount is added, a certain effect is exhibited. : When the silica powder having a silanol group on the surface = 99: 1 or more, the effect is exhibited.

The filling amount of the entire filler in the sealing material is not particularly limited. However, in view of mechanical strength, stress generation due to a difference in thermal expansion with the semiconductor element, moisture absorption, fluidity, and thermal shock resistance, It is desirable that 20 to 97% by weight (wt%) is added to the resin composition.

The shape of the filler is not particularly limited, but from the viewpoint of high filling and high fluidity, it is preferable to use the filler together with a spherical shape or another shape.

The resin component of the sealing material used in the present invention is not particularly limited, but any resin having a functional group that reacts with a silanol group, such as a phenol resin, an epoxy resin, a polyimide resin, or a silicone resin, may be used. From the viewpoint of moisture resistance, an epoxy resin is preferable as the main agent. Any epoxy resin may be used as long as it contains two or more epoxy groups in one molecule, but from the viewpoint of fluidity of the sealing resin and moisture resistance of the resin after molding, biphenyl type epoxy resin is used. It is desirable to use. Liquid resin may be used.

As the curing agent, a phenol-based curing agent, an amine-based curing agent, an acid anhydride and the like are used, and it is desirable to use a phenol-based curing agent from the viewpoint of moisture resistance.

Further, in order to accelerate the curing reaction, a curing accelerator may be added. Examples include phosphorus-based catalysts such as triphenylphosphine, imidazole-based catalysts,
Anion, cationic catalyst, aromatic onium salt, DBU
Are used. In particular, it is desirable to use triphenylphosphine from the viewpoint of moisture resistance.

In order to improve the wettability and adhesiveness between the surface of the filler and the resin, the surface of the filler may be subjected to a coupling treatment. Silane-based,
Titanium, aluminum and the like are used. In particular, when silica powder is used as the filler, it is desirable to use a silane coupling material. When an alkoxysilane-based coupling material is used, the alkoxy group may be subjected to a dealcoholization reaction in advance to convert the alkoxy group into a hydroxyl group, and then the treatment may be performed.

A brominated epoxy resin, antimony trioxide, or the like may be added as a flame retardant or a flame retardant auxiliary.

As a coloring agent, carbon black, a dye or the like may be added.

<First Embodiment and Comparative Example> A sealing resin suitable for manufacturing a semiconductor device will be described below as a first embodiment of the present invention. As main ingredients, biphenyl type epoxy resin (YX-4000H, manufactured by Yuka Shell Chemical), xylene phenol (XLC-225LL, manufactured by Mitsui Toatsu Chemicals), spherical silica (silica powder with the amount of silanol groups on the surface changed as described above) Synthesized by the method described, and fused silica FB-6S (manufactured by Denki Kagaku Kogyo) and triphenylphosphine (Kaisei Kasei) were mixed in a mixer at the composition ratio of the example shown in FIG. After kneading, the mixture was cooled and pulverized to obtain an epoxy resin composition.

Further, epoxy resin compositions were similarly obtained at the composition ratios of the comparative examples shown in Table 1. The units in the table are parts by weight.

Using the resin composition obtained above, the semiconductor device shown in FIG. 3 was obtained, and the following various tests were performed.

Test Items 1) Drop Test The state of the resin projections when the semiconductor device was naturally dropped from a height of 2 m was observed with a stereoscopic microscope.

(Evaluation results) ○ No damage × Damage 2) Peeling of metal film i) When the semiconductor device of FIG. 3 is mounted on a motherboard, peeling of the metal film from the resin protrusion is performed by ultrasonic waves from the surface of the semiconductor element. Observed with a flaw detection microscope.

Ii) The semiconductor device after the mounting is
A thermal shock test at 50 ° C. was performed to confirm the occurrence of peeling. At the same time, the presence or absence of cracks in the resin was confirmed.
In FIG. 5, if a crack occurs in five packages out of 100 packages, it is expressed as 5/100.

3) Moisture resistance A semiconductor device is mounted on a pressure cooker tester (121 ° C./85).
% RH) and a bias voltage is applied (7%
V) The device defect at the time of performing was examined. In FIG. 5, if the number of short-circuits occurs in 10 out of 100 packages, it is represented as 10/100.

<Test Results> FIG. 5 is a diagram for explaining the above results. In the drop test, when the amount of the silanol group was 0.0005 mmol / g, the resin projections were broken, and sufficient mechanical strength was not obtained as a sealing resin (Comparative Example 1). Further, as shown in Comparative Example 2, when the amount of the silanol group was 15 mmol / g, the fluidity of the sealing resin was poor, and molding failure was caused.

When the particle size of the silica powder having a silanol group on the surface is 0.0005 μm, the resin and the silanol group react with each other to increase the viscosity, resulting in molding failure (Comparative Example 3). When the particle size was 250 μm, the silica powder adhered to the surface of the semiconductor element, causing molding failure (Comparative Example 4). Further, in the test items 2) and 3) with the respective particle sizes, satisfactory results were not obtained.

As shown in Comparative Example 5, when the amount of the inorganic filler in the resin composition was 15% by weight or less, the mechanical strength of the sealing resin was weak, and further, the peeling after the pressure cooker test and the temperature cycle test. Did not give satisfactory results in all the packages tested. Conversely, as shown in Comparative Example 6, when the amount of the inorganic filler was 98 wt%, molding failure occurred. Furthermore, in Comparative Example 7 in which alumina was used instead of fused silica, the molded resin had poor moisture resistance, and short-circuit occurred in 50 out of 100 packages in the pressure cooker test.

From the above results, the sealing for a semiconductor element containing an inorganic filler which is a silica powder having a silanol group on the surface in a range of 0.001 mmol / g to 10 mmol / g and a particle size of 0.01 μm to 200 μm. It can be seen that the resin for stopping has good fluidity suitable for resin molding and excellent mechanical strength after molding.

Next, a method of manufacturing a semiconductor device using the sealing resin according to the present invention will be described with reference to the drawings.

FIGS. 6 to 13 show a method of manufacturing a semiconductor device using the sealing resin according to the present invention along the manufacturing procedure. FIG. 13 further shows a semiconductor device using the resin according to the present invention. Device 10 manufactured by the manufacturing method of
Indicates 0.

First, a semiconductor device 1 according to a second embodiment of the present invention manufactured by the manufacturing method shown in FIGS.
0 will be described. The semiconductor device 100 generally includes a semiconductor element 110, a bump 120 serving as a projection electrode,
And a very simple structure including the resin layer 130 and the like.

The semiconductor element 110 is one in which an electronic circuit is formed on a semiconductor substrate, and a large number of bumps 120 are provided on the surface on the mounting side. The bump 120 has a configuration in which, for example, a solder ball is provided by using a transfer method, and functions as an external connection electrode.

The resin layer 130 (indicated by satin) contains silica powder having a silanol group on the surface according to the present invention, and is formed over the entire surface of the semiconductor element 110 on which bumps are formed due to its good fluidity. . Therefore, the bumps 120 provided on the semiconductor element 110
Is sealed by the resin layer 130,
The tip of the bump 120 is configured to be exposed from the resin layer 130. That is, the resin layer 130 is formed on the semiconductor element 110 so as to seal the bump 120 except for the tip.

The semiconductor device 100 configured as described above has a so-called chip size package structure in which the overall size is substantially equal to the size of the semiconductor chip 110. Therefore, the semiconductor device 100 can sufficiently meet the needs for miniaturization, which has been particularly required in recent years.

Subsequently, the semiconductor device 10 having the above configuration is
0 will be described with reference to FIGS.

The semiconductor device 100 is generally formed by performing a semiconductor element forming step, a bump forming step, a resin sealing step, a projection electrode exposing step, a separating step, and the like. Among these steps, the semiconductor element forming step is a step of forming a circuit on the substrate using excimer laser technology or the like, and the bump forming step is on the semiconductor element 110 on which the circuit is formed using a transfer method or the like. This is a configuration in which the bumps 120 are formed.

The semiconductor element forming step and the bump forming step are performed by using a well-known technique, and the main part of the present invention is a resin sealing step. Only the preceding and following steps will be described.

The resin sealing step is further subdivided into a substrate mounting step, a resin layer forming step, and a release step. When the resin sealing step is started, first, as shown in FIG. 6, a semiconductor element forming step and a bump forming step are performed, so that a wafer 40 on which a large number of semiconductor elements 110 are formed is removed from a semiconductor device manufacturing mold. Attach to 60.

The mold 60 is roughly composed of an upper mold 62 and a lower mold 64, both of which are provided with a heater (not shown), and heats and melts a sealing resin 55 to be described later. It is configured.

In a state immediately after the start of the resin sealing step, FIG.
As shown in FIG. 7, the above-described wafer 40 is mounted in a recess formed by the upper mold 62 and the lower mold 64 in cooperation. next,
The film 70 is disposed under the upper mold 62 without distortion, and the sealing resin 55 is placed on the bumps 120 of the wafer 40. The film 70 can be, for example, polyimide, vinyl chloride, PC, PET, biodegradable resin, paper such as synthetic paper, metal foil, or a composite material of these, and is applied at the time of resin formation described later. A material that does not deteriorate due to heat is selected. For the film 70 used in this embodiment, a material having a predetermined elasticity in addition to the above heat resistance is selected. Here, the predetermined elasticity is such an elasticity that the front end of the bump 120 can sink into the film 70 at the time of sealing described later.

On the other hand, the sealing resin 55 is a resin according to the present invention which contains powdered silica having a silanol group on the surface. In this embodiment, a resin obtained by molding this resin into a cylindrical shape is used. However, it is not particularly limited to this shape. The mounting position of the sealing resin 55 according to the present invention is selected at a substantially central position of the wafer 40.

After the substrate mounting step is completed, a resin layer forming step is subsequently performed. When the resin layer forming step is started, the sealing resin 55 is melted by heating by the mold 60, and the upper mold 62 moves downward in the Z1 direction. Resin 55 for sealing
Is pressed and urged by the lower die 62 through the film 70, and the temperature of the sealing resin 55 is raised to a temperature at which the sealing resin 55 can be melted. The state is spread to some extent on the wafer 40. Furthermore,
As the upper die 62 moves down, the sealing resin 55 is formed in the cavity 80 while being compressed.

Specifically, the sealing resin 55 placed at the center of the wafer 40 is softened by heating and the upper mold 62
The sealing resin 55 is compressed by the downward movement of the upper mold 6.
It is pushed apart by 2 and advances from the center position toward the outer periphery. Since the sealing resin according to the present invention has excellent fluidity, it is uniformly diffused to every corner in the cavity 80 and is sealed by the sealing resin 55. At this time, the sealing resin 55 seals all the bumps 120 and the wafer 40 formed on the wafer 40 with the film 70 pressed against the bumps 120.

FIG. 8 shows a state in which the resin forming step has been completed. In this state, the film 70 is
, The bumps 120 are sunk into the film 70. In addition, the sealing resin 55 is pressed into contact with the entire surface of the wafer 40 so that the bump 1
A resin layer 130 for sealing 20 is formed. Further, the resin amount of the sealing resin 55 is measured in advance, and is designed so that the height of the resin layer 130 is substantially equal to the height of the bump 120 when the resin layer forming step shown in FIG. ing.

After the completion of the resin layer forming step, a releasing step is performed. In this release step, first, the upper mold 62 is raised in the Z2 direction, and the wafer 40 and the resin layer 130 are held by the lower mold 64. Therefore, when the upper mold 62 is raised, only the upper mold 62 separates from the film 70 and moves upward. The wafer 40 on which the resin layer is formed is released from the mold 60 while maintaining the state in which the film 70 and the resin layer 130 are fixed. Thus, by using the encapsulating resin according to the present invention, it is ensured that the resin layer 130 covers the entire surface of the wafer 40 where the bumps 120 are formed due to its good fluidity (FIG. 10). Further, this makes it possible to securely hold all the bumps 120 formed on the wafer 40, and to improve the reliability of the semiconductor device 100.

Thereafter, as shown in FIG. 11A, a projection exposing step is performed by peeling the film 70 from the resin layer 130. In this way, as shown in FIG. 11B, the tip of the bump 120 that has been sunk into the film 70 is exposed from the resin layer 130.

FIG. 12 shows the separation step. As shown in the figure, in the separation step, the wafer 40 is
Each 10 is cut together with the resin layer 130 using the dicer 140. Thus, the above-described semiconductor device 100 shown in FIG. 13 is manufactured.

[0073]

According to the present invention as described above, the following various effects can be realized.

According to the first to fifth aspects of the present invention, the mechanical strength of the resin protrusion formed so as to protrude downward from the mounting surface of the resin package is improved, and damage due to an impact during handling of a semiconductor device or the like is prevented. Can be prevented.

[Brief description of the drawings]

1A and 1B are diagrams for explaining an example of a conventional semiconductor device, wherein FIG. 1A is a side view, FIG. 1B is an internal plan view, and FIG. 1C is a plan view.

FIG. 2 is a diagram illustrating an example of a semiconductor device.

FIG. 3 is a sectional view of the semiconductor device according to the first embodiment of the present invention.

FIG. 4 is a partially enlarged view of a resin protrusion shown in FIG. 3;

FIG. 5 is a diagram illustrating the composition ratio of the sealing resin according to the present invention and the results of various tests on each sealing resin in the semiconductor device in the first embodiment.

FIG. 6 is a view illustrating a resin sealing step of the method for manufacturing a semiconductor device according to the second embodiment of the present invention.

FIG. 7 is a view for explaining a resin sealing step of the method for manufacturing a semiconductor device according to the second embodiment of the present invention.

FIG. 8 is a view illustrating a resin sealing step of the method for manufacturing a semiconductor device according to the second embodiment of the present invention.

FIG. 9 is a view illustrating a resin sealing step of the method for manufacturing a semiconductor device according to the second embodiment of the present invention.

FIG. 10 is a view for explaining a protruding electrode exposing step of the method for manufacturing a semiconductor device according to the second embodiment of the present invention;
(A) shows the wafer after the resin sealing step is completed, (B)
FIG. 3 is an enlarged view of a portion indicated by an arrow A in FIG.

FIG. 11 is a view for explaining a protruding electrode exposing step of the method for manufacturing a semiconductor device according to the second embodiment of the present invention;
(A) shows the wafer from which the film has been peeled off, and (B) is an enlarged view of the portion indicated by arrow B in (A).

FIG. 12 is a view illustrating a separation step in the method of manufacturing a semiconductor device according to the second embodiment of the present invention.

FIG. 13 is a diagram illustrating a semiconductor device according to a second embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Resin 12,21,31,110 Semiconductor element 13 Outer lead 14 Bonding wire 15 Die stage 18 Inner lead 19 Leading part 20,30,100 Semiconductor device 22,32 Resin package 23 Metal layer 26,36 Mounting surface 27 Resin projection 28 , 38 wire 33 metal film 34 electrode pad 35 element fixing resin 36 mounting surface 37 resin protrusion 40 wafer 55 sealing resin 60 mold 62 upper mold 64 lower mold 70 film 80 cavity 120 bump 130 resin layer 140 dicer

Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat II (Reference) H01L 23/29 H01L 23/30 R 23/31 F-term (Reference) 4J002 AA001 CC041 CD001 CM041 CP031 DJ016 FB076 FB086 GQ05 4M109 AA01 BA05 BA07 CA03 CA05 CA21 DA06 DA10 DB12 EB13 EB17 EC03

Claims (5)

[Claims] A semiconductor device, a resin package for sealing the semiconductor device, a resin protrusion formed to project downward from a mounting surface of the resin package, and a metal film disposed on the resin protrusion. A semiconductor device comprising: an electrode pad on a semiconductor element; and connection means for electrically connecting the metal film to the metal pad, wherein the sealing resin includes an inorganic filler, and the inorganic filler is provided on a surface. A semiconductor device comprising a silica powder having a silanol group. 2. The amount of the silanol group in the silica powder having a silanol group on the surface is 0.001 mmol.
2. The semiconductor device according to claim 1, wherein the concentration is not less than 10 g / g and not more than 10 mmol / g. 3. The semiconductor device according to claim 1, wherein said silica powder having a silanol group on its surface has an average particle size of φ0.01 μm or more and 200 μm or less. 4. The semiconductor device according to claim 1, wherein the inorganic filler includes silica powder having a silanol group on the surface and another type of inorganic filler. 5. The semiconductor device according to claim 4, wherein said another kind of inorganic filler is fused silica.