JP2001250803A - Substrate drying device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate drying device which is capable of drying a substrate without generating water marks on its surface and restraining a drying cost from increasing even if the substrate has a fine and complicated structure. SOLUTION: Drying gas of fluorine inert fluid generated by a drying gas generator 31 is heated by a heater 37 and then fed through a drying gas feed nozzle 30. The drying gas is supplied as a flow of gas onto the main surface of a substrate W while it is pulled up from a pure water in a cleaning tank 20. A fluorine inert fluid is condensed on the surface of the substrate W, substituted for water, and evaporated. The fluorine inert fluid is excellent in permeability and drying characteristics, so that it is capable of restraining water marks from being formed on the surface of the substrate even if the substrate has a fine and complicated structure, and it restrains a drying process from increasing in cost because it has no adverse effect on an environment and requires no special treatment when it is disused.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor substrate, a glass substrate for a liquid crystal display, a glass substrate for a photomask, a substrate for an optical disk, etc.
(Hereinafter simply referred to as “substrate”).

[0002]

2. Description of the Related Art Conventionally, a surface treatment such as etching with a chemical solution, a cleaning treatment with pure water, etc., and a drying treatment are sequentially applied to the above-mentioned substrate to achieve a series of substrate treatments.
Of these processes, the drying process is generally performed as a final process after the final cleaning with pure water.

Conventionally, as a method of drying such a substrate, a method in which a substrate is rotated at a high speed to shake off moisture by its centrifugal force (so-called spin dry) or an IP method
There is a method using A (isopropyl alcohol). However, with the recent complication of the semiconductor device structure, a problem of poor drying called a watermark has come to be noticed, and a drying method using IPA, which does not easily cause such a problem, is becoming mainstream. Watermark is a dry spot generated by the reaction of moisture adhering to the substrate surface with the silicon material of the substrate and oxygen in the air to generate particles. The longer the time, the more likely it is.

In the drying method using IPA, IPA vapor is sprayed on the surface of the substrate to which moisture has adhered. IP
Since A is vaporized within a short time after being replaced by moisture attached to the substrate surface, a watermark is relatively unlikely to occur in a drying method using IPA.

[0005]

However, in recent years, as is well known, environmental issues have been regarded as important, and IPA which exerts a burden on the environment if released directly to the outside is considered.
In order to dispose of, it was necessary to perform a predetermined disposal treatment to make the environment harmless. Naturally, such a disposal process requires a considerable cost, and there is a problem that this raises the cost of substrate processing.

In recent years, the device structure formed on the substrate surface has been increasingly miniaturized and complicated, and the problem of the watermark may occur even in the drying method using IPA.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and does not generate a watermark even on a substrate having a miniaturized and complicated structure, and suppresses an increase in cost required for a drying process. It is an object of the present invention to provide a substrate drying apparatus capable of performing the above.

[0008]

According to a first aspect of the present invention, there is provided a substrate drying apparatus for drying a substrate which has been washed with pure water. Dry gas supply means for supplying a dry gas containing a fluorine-based inert liquid gas to the surface is provided.

Further, the invention according to claim 2 is a substrate drying apparatus for drying a substrate after being washed with pure water,
A pure water is stored, and a cleaning tank for cleaning the substrate by immersing the substrate in the pure water, a lifting means for lifting the cleaned substrate from the cleaning tank, and a substrate being lifted by the lifting means. Dry gas supply means for supplying a dry gas containing a fluorine-based inert liquid gas to the main surface.

According to a third aspect of the present invention, in the substrate drying apparatus according to the second aspect of the present invention, the drying gas supply means is provided on a side of the substrate being lifted from the cleaning tank by the lifting means. An air flow of a dry gas containing the fluorine inert liquid gas is supplied to the substrate.

According to a fourth aspect of the present invention, in the substrate drying apparatus according to the third aspect of the present invention, the drying gas supply means is provided with the drying gas in a substantially horizontal direction on a gas-liquid interface of pure water in the cleaning tank. A gas flow is formed.

According to a fifth aspect of the present invention, in the substrate drying apparatus according to any one of the second to fourth aspects,
In the cleaning tank, the plurality of substrates stacked at intervals from each other are washed, the lifting means is allowed to collectively lift the plurality of substrates, and the drying gas supply means is lifted by the lifting means. An airflow of the dry gas is formed between each of the plurality of substrates being started.

According to a sixth aspect of the present invention, in the substrate drying apparatus according to any one of the first to fifth aspects,
Dry gas heating means for heating the dry gas to a temperature higher than the substrate to be dried by 10 ° C. or more and sending the dried gas to the dry gas supply means is further provided.

According to a seventh aspect of the present invention, in the substrate drying apparatus according to any one of the first to sixth aspects,
The dry gas is composed of only a fluorine-based inert liquid gas.

According to an eighth aspect of the present invention, in a substrate drying apparatus according to any one of the first to sixth aspects,
The dry gas includes a fluorine inert liquid gas and 10%.
It contains a gas of a water-soluble solvent of not more than% by volume.

According to a ninth aspect of the present invention, in the substrate drying apparatus according to any one of the first to eighth aspects,
The fluorine-based inert liquid is represented by the general formula (C _(n) F _{(2n + 1)} −
O—R ₁ ) (where R ₁ is an alkyl group and n is a natural number).

According to a tenth aspect of the present invention, in the substrate drying apparatus according to any one of the first to ninth aspects, the fluorine-based inert liquid is ethyl perfluorobutyl ether.

[0018]

Embodiments of the present invention will be described below in detail with reference to the drawings.

<1. Configuration of Substrate Drying Apparatus> FIG. 1 is a view showing the overall configuration of a substrate drying apparatus according to the present invention. The substrate drying apparatus is roughly composed of a drying tank 10 for performing a drying process and a mechanism for supplying various gases to the drying tank 10. FIG. 2 is a plan view of the drying tank 10, and FIG. 3 is a side view of the drying tank 10.

The drying tank 10 is a casing whose interior can be made a closed space by closing a lid (not shown). The transfer of the substrate W into and out of the drying tank 10 is performed by a transfer robot (not shown) in a state where the lid is opened.

A washing tank 20 is fixedly disposed inside the drying tank 10. The cleaning tank 20 is a processing tank for storing pure water and immersing the substrate W in the pure water to clean the substrate W. The cleaning tank 20 is provided with a pure water supply mechanism and a drainage mechanism (not shown). These mechanisms supply new pure water to the cleaning tank 20 and remove used pure water from the cleaning tank 20. Can be drained. The cleaning tank 20 may be further provided with a mechanism for supplying and discharging not only pure water but also a chemical solution such as an etching solution.

The inside of the drying tank 10 is provided with a lifter LH.
(See FIGS. 2 and 3). Lifter LH
Has a function to raise and lower the lifter arm 25 in the vertical direction. The lifter arm 25 has three holding rods 2
6a, 26b, 26c are fixed so that their longitudinal directions are substantially horizontal, and three holding rods 26a, 26b, 2c are provided.
In each of 6c, a plurality of holding grooves for holding the substrate W in an upright posture by fitting the outer edge portion of the substrate W are provided at predetermined intervals.

With such a configuration, the lifter LH is 3
The plurality of substrates W, which are stacked and held parallel to each other by the holding rods 26a, 26b, 26c, are held in the cleaning tank 20.
Can be raised and lowered between a position immersed in the pure water stored in the container and a position pulled up from the pure water. The lifter LH can employ various mechanisms such as a feed screw mechanism using a ball screw and a belt mechanism using a pulley and a belt as a mechanism for moving the lifter arm 25 up and down.

The drying tank 10 has two drying gas supply nozzles 30 and two nitrogen gas supply nozzles 50.
Is provided. Each of the two dry gas supply nozzles 30 and the two nitrogen gas supply nozzles 50 has the longitudinal direction substantially horizontal (the three holding rods 26a, 26b, and 2).
6c) (in parallel with 6c). The drying gas supply nozzle 30 has a plurality of discharge holes 30a, and the nitrogen gas supply nozzle 50 has a plurality of discharge holes 50a (see FIG. 3).

Here, the discharge hole 30a provided in the dry gas supply nozzle 30 is formed such that the discharge direction is substantially horizontal. On the other hand, the nitrogen gas supply nozzle 50
Is formed such that the discharge direction is directed obliquely downward. Then, the discharge hole 30a
Are three holding rods 26a, 26b, 26 of the lifter LH.
The substrates are formed so as to be located between the plurality of substrates W arranged and held in parallel with each other by c (see FIG. 3).

The drying gas supply nozzle 30 has a drying tank 10
Dry gas is supplied from a dry gas supply mechanism provided outside. Such a dry gas supply mechanism includes a nitrogen gas supply source 3
2, a drying gas generating section 31, a pipe 35, and a heater 37.
And is constituted by. The drying gas generator 31 includes:
Fluorine-based inert liquid is stored.

The fluorine-based inert liquid is an inert material, does not attack constituent materials such as metals, plastics and rubbers, is nonflammable, and does not affect the environment. The general structural formula of the fluorinated inert liquid in the present invention is shown below.

[0028]

Embedded image

Here, R ₁ is an alkyl group, and n is a natural number. In this embodiment, ethyl perfluorobutyl ether is used as the fluorine-based inert liquid. The structural formula of ethyl perfluorobutyl ether is shown below.

[0030]

Embedded image

Nitrogen gas can be supplied as bubbles from the nitrogen gas supply source 32 to the fluorine-based inert liquid stored in the dry gas generation unit 31, and so-called nitrogen gas bubbling can be performed. By this bubbling, the gaseous phase (gas) of the fluorine-based inert liquid is mixed with the nitrogen gas, and the dry gas composed of the gas of the fluorine-based inert liquid can be sent to the pipe 35 using the nitrogen gas as a carrier gas. Note that, in the present embodiment, only the fluorine-based inert liquid is stored in the dry gas generation unit 31,
The drying gas is composed of only a fluorine-based inert liquid gas. The concentration of the dry gas in the gas flowing through the pipe 35 is about 2% by volume, and the flow rate is 10 l / mi.
n. It should be about the degree.

A heater 37 is provided in the middle of the path where the pipe 35 is provided, and the drying gas carried by the carrier gas is heated by the heater 37.
At this time, the substrate W to be dried in the drying tank 10 is 1
The drying gas is heated to a temperature higher than 0 ° C. For example, when the substrate W to be dried has a temperature of 23 ° C., the substrate 37 is heated by the heater 37 so that the temperature of the drying gas is 33 ° C. or higher. The drying gas heated by the heater 37 is further supplied to the drying gas supply nozzle 30 via the pipe 35 and is supplied into the drying tank 10 from the discharge hole 30a of the drying gas supply nozzle 30.

The drying gas supply mode from the drying gas supply nozzle 30 will be further described later. However, since the drying gas supply nozzle 30 is provided beside the substrate W being lifted from the cleaning tank 20 by the lifter LH, Dry gas is supplied from the side of the substrate W being lifted. The drying gas supply nozzle 30 forms a gas flow of the drying gas in a substantially horizontal direction between the plurality of substrates W being lifted and on the gas-liquid interface of the pure water in the cleaning tank 20.

On the other hand, nitrogen gas is supplied to the nitrogen gas supply nozzle 50 from a nitrogen gas supply source 52 provided outside the drying tank 10. The nitrogen gas supply source 52 is connected to the nitrogen gas supply nozzle 50 via a pipe 55. Also,
A heater 57 is provided in the middle of the path where the pipe 55 is provided. The nitrogen gas sent from the nitrogen gas supply source 52 passes through the pipe 55, is heated by the heater 57 on the way, reaches the nitrogen gas supply nozzle 50, and obliquely lowers from the discharge hole 50 a of the nitrogen gas supply nozzle 50. It is discharged toward.

In this embodiment, the drying gas supply nozzle 30 corresponds to the drying gas supply means, and the lifter L
H corresponds to the lifting means, and the heater 37 corresponds to the dry gas heating means.

<2. Drying Process in Substrate Drying Apparatus> Next, the procedure of the drying processing in the substrate drying apparatus having the above configuration will be described with reference to FIGS. FIGS. 4 to 7 are views for explaining the state of the drying process in the substrate drying apparatus.

First, in FIG. 4, the substrate W has been subjected to a cleaning process with pure water (water cleaning process). The washing process is
The plurality of substrates W stacked and arranged at an interval from each other are held by the lifter LH and immersed in pure water in the cleaning tank 20. At this time, pure water is continuously supplied from the lower part of the cleaning tank 20, and the pure water always overflows from the upper part (so-called upflow processing). In this way, the contaminants are separated from the substrate W,
It is discharged outside the cleaning tank 20. It is needless to say that the used pure water overflowing from the washing tank 20 is collected and discharged to the outside of the drying tank 10. Further, prior to the water washing process, the surface treatment of the substrate W with the chemical solution in the cleaning tank 20 may be performed, or the substrate W after the chemical solution treatment may be carried into the drying tank 10 in another tank.

At the stage where the washing process is being performed,
Gas supply from the drying gas supply nozzle 30 is stopped. On the other hand, from the nitrogen gas supply nozzle 50, the drying tank 10
May be supplied with nitrogen gas.

Next, when the water washing process for a predetermined time is completed,
The supply of the drying gas from the drying gas supply nozzle 30 is started, and the plurality of substrates W held by the lifter LH are held.
All at once (FIG. 5). At this time, the drying gas supply nozzle 30 supplies the drying gas from the side of the substrate W being lifted from the cleaning tank 20 by the lifter LH, and as shown by an arrow A5 in FIG.
And a gas flow of the dry gas is formed in a substantially horizontal direction on the gas-liquid interface of the pure water in the cleaning tank 20.

A large amount of pure water droplets adhere to the main surface of the substrate W being lifted by the lifter LH.
A dry gas stream made of a fluorine-based inert liquid gas is supplied from the dry gas supply nozzle 30 to the main surface of the substrate W to which such pure water has adhered. The drying gas supplied from the drying gas supply nozzle 30 is heated by the heater 57 to a temperature higher by at least 10 ° C. than the substrate W being lifted. Therefore, the gas of the fluorine-based inert liquid easily condenses on each of the main surfaces of the plurality of substrates W, and the fluorine-based inert liquid displaces and adheres to the water droplets of the substrate W.

At the stage of lifting the substrate W by the lifter LH, pure water is continuously supplied to the cleaning tank 20 from the lower part, and pure water continues to overflow from the upper part.
The impurities in the cleaning tank 20 are discharged out of the tank.

Next, when the substrate W is completely separated from the pure water in the cleaning tank 20 by the lifter LH, the gas supply from the drying gas supply nozzle 30 is stopped, and the nitrogen gas or nitrogen gas is supplied from the nitrogen gas supply nozzle 50. The nitrogen gas heated by the heater 57 is supplied (FIG. 6). By supplying nitrogen gas from the nitrogen gas supply nozzle 50, the atmosphere inside the drying tank 10 is replaced with inert nitrogen gas, and the fluorine-based inert liquid attached to the substrate W is vaporized. In particular, when heated nitrogen gas is blown onto the substrate W, vaporization of the fluorine-based inert liquid is promoted, and the drying time is reduced. At this stage, the supply of pure water to the cleaning tank 20 is stopped, and the used pure water is discharged from the cleaning tank 20.

Thereafter, after the fluorine-based inert liquid adhering to the substrate W is completely vaporized, the supply of nitrogen gas from the nitrogen gas supply nozzle 50 is stopped, and the lid of the drying tank 10 is opened to open the substrate W after drying. Is carried out of the tank (FIG. 7). As described above, a series of drying processing of the substrate W is completed.

As described above, in the substrate drying apparatus according to the present invention, the gas flow of the fluorine-based inert liquid is supplied to the main surface of the substrate W to which the pure water is attached, and the gas of the fluorine-based inert liquid is supplied. The substrate W is dried by condensing on the main surface and replacing water drops of pure water with a fluorine-based inert liquid.
The fluorine-based inert liquid is also used as a substitute for chlorofluorocarbon, and is a material that does not cause problems such as ozone destruction and global warming, and has a light load on the environment. Therefore, no special treatment is required for disposal. Therefore, an increase in cost required for the drying process can be suppressed.

Further, since the fluorine-based inert liquid and its gas are nonflammable, it is not necessary to provide a special safety mechanism such as an explosion-proof structure in the drying device. This can also suppress an increase in cost required for the drying process.

The fluorine-based inert liquid has a small surface tension, that of water is 71.8 dyn / cm, and that of IPA is 20.8 dy.
The surface tension of the fluorine-based inert liquid is 18 dyn / cm or less, while the surface tension is n / cm. Thus, the low surface tension of the fluorine-based inert liquid means that its permeability is higher than that of IPA. The fluorine-based inert liquid is
Because of its high permeability, it can be easily replaced with moisture even in recent miniaturized and complicated device structures, and particularly in places with large aspect ratios (ratio of length to diameter) such as holes. In the above, the fluorine-based inert liquid can be replaced with moisture. Therefore, in the drying method using the fluorine-based inert liquid, the drying performance is good even in recent miniaturized and complicated device structures, and it is difficult to cause a problem of a watermark caused by attached moisture.

The fluorinated inert liquid also has a small latent heat of vaporization, and water has an evaporation latent heat of 2256 J / g and IPA of 674 J / g, whereas the fluorinated inert liquid has an evaporation latent heat of 84 J / g.
g or less. The fact that the latent heat of vaporization of the fluorine-based inert liquid is small means that its drying speed is higher than that of IPA. Therefore, in the drying method using the fluorinated inert liquid, the time required for drying can be shortened as compared with the case where IPA is used, and the throughput is improved.
It is possible to more effectively suppress the generation of a watermark due to the attached moisture.

In the above embodiment, the dry gas supply nozzle 30 supplies the dry gas of the fluorine-based inert liquid from the side of the substrate W being lifted from the cleaning tank 20 by the lifter LH. Is formed in a substantially horizontal direction on the gas-liquid interface of the pure water, so that the dry gas is sprayed on the separated area almost simultaneously with the separation of the surface of the substrate W from the pure water. For this reason, the water on the main surface of the substrate W is promptly replaced by the fluorine-based inert liquid without being exposed to the outside air, and the generation of the watermark can be suppressed more effectively.

At this time, a part of the supplied dry gas falls into the washing tank 20 and mixes with pure water. However, the fluorine-based inert liquid is insoluble in water and is completely separated from water. However, since Marangoni convection does not occur, problems such as transfer of particles due to Marangoni convection do not occur.

Further, since the dry gas supply nozzle 30 forms a gas flow of the dry gas between each of the plurality of substrates W being lifted by the lifter LH, the fluorine-based inert liquid is uniformly applied to each substrate W. Dry gas can be sprayed.

Further, since the heater 57 heats the dry gas to a temperature higher by 10 ° C. or more than the substrate W being lifted, the fluorine-based inert liquid easily condenses on the main surface of the substrate W, The liquid of the system inert liquid can be promptly replaced by the water droplet on the substrate W, and as a result, the generation of a watermark can be more effectively suppressed.

<3. Modifications> While the preferred embodiments of the present invention have been described above, the present invention is not limited to the above-described examples. For example, in the above-described embodiment, only the fluorine-based inert liquid is stored in the dry gas generation unit 31 and the dry gas is constituted only by the gas of the fluorine-based inert liquid. A mixed liquid of a system inert liquid and a water-soluble solvent may be stored, and the dry gas may be a mixed gas of a fluorine-based inert liquid gas and a water-soluble solvent gas. As the water-soluble solvent, for example, alcohol such as IPA, acetone, ketone, carboxylic acid and the like can be used. Further, the gas of the water-soluble solvent in the mixed dry gas needs to be 10% by volume or less. This is because when the amount of the water-soluble solvent gas in the mixed dry gas exceeds 10% by volume, the ratio of the gas of the fluorinated inert liquid in the mixed dry gas decreases, and the above-described fluorinated inert liquid is used. And the effects of the
This is because the use of IPA or the like causes an inherent problem (a problem of disposal, etc.). If the gas of the water-soluble solvent in the mixed dry gas is 10% by volume or less, such a problem hardly occurs.

In the above embodiment, the dry gas is generated by bubbling nitrogen gas.
The method for generating the dry gas is not limited to this. For example, a heater is provided in the dry gas generating unit 31 to heat the fluorine-based inert liquid (or a mixture of the fluorine-based inert liquid and the water-soluble solvent). Dry gas may be generated.

In the above embodiment, the drying gas is heated by the heater 57 to a temperature higher than the substrate W to be dried by 10 ° C. or more. However, it is not always necessary to heat the drying gas. When the drying gas is not heated, the substrate W
And the temperature of the drying gas are substantially equal to each other, so that condensation is less likely to occur than in the above embodiment.
Lowering the lifting speed than that of the above embodiment (1 mm / s
ec. degree) is required. If the lifting speed of the substrate W is reduced, the fluorine-based inert liquid is condensed without heating the dry gas, and the same effect as in the above embodiment can be obtained.

In the above embodiment, the drying gas supply nozzle 30 is provided on the side of the substrate W being lifted from the cleaning tank 20 by the lifter LH. However, the present invention is not limited to this. The position may be any position at which a dry gas can be supplied to the main surface of the substrate W.

In the above embodiment, ethyl perfluorobutyl ether was used as the fluorine-based inert liquid. However, the fluorine-based inert liquid is not limited to this, and has a structure as shown in Chemical formula 1. If, for example, methyl perfluoroisobutyl ether, ethyl perfluorobutyl ether, ethyl perfluoroisobutyl ether, propyl perfluorobutyl ether, propyl perfluoroisobutyl ether, methyl perfluoropropyl ether, methyl perfluoroisopropyl ether, ethyl perfluoropropyl ether ,
It may be ethyl perfluoroisopropyl ether, methyl perfluoropentyl ether, or ethyl perfluoropentyl ether.

Further, in the above embodiment, the plurality of substrates W
Is a batch-type apparatus that collectively processes wafers W, but the technology according to the present invention can be applied to a so-called single-wafer apparatus that processes the substrates W one by one.

[0058]

As described above, according to the first aspect of the present invention, a dry gas containing a gas of a fluorine-based inert liquid is supplied to the main surface of the substrate to which pure water is attached. Since the inert liquid has excellent permeability and drying properties,
Even with a substrate having a complicated structure, the generation of watermarks can be suppressed, and the fluorine-based inert liquid does not place a burden on the environment, so no special treatment is required for disposal, and drying treatment is performed. Increase in the cost required for the operation can be suppressed.

According to the second aspect of the present invention, a dry gas containing a fluorine-based inert liquid gas is supplied to the main surface of the substrate being lifted by the lifting means. The effect can be obtained.

According to the third aspect of the present invention, the dry gas supply means is provided beside the substrate being lifted from the cleaning tank by the lifting means, and the gas of the fluorine-based inert liquid is directed toward the substrate. Is supplied, the gas flow of the dry gas can be easily supplied to the main surface of the substrate being pulled up.

According to the fourth aspect of the present invention, since the drying gas supply means forms a gas flow of the drying gas in a substantially horizontal direction on the gas-liquid interface of the pure water in the cleaning tank, the water on the main surface of the substrate is reduced. Is hardly exposed to the outside air, and as a result, the generation of a watermark can be more effectively suppressed.

According to the fifth aspect of the present invention, since a dry gas flow is formed between each of the plurality of substrates being lifted by the lifting means, the dry gas is uniformly supplied to each substrate. be able to.

According to the invention of claim 6, since the dry gas is heated to a temperature higher than the substrate to be dried by 10 ° C. or more, the fluorine-based inert liquid easily condenses on the main surface of the substrate. As a result, generation of a watermark can be more effectively suppressed.

Further, according to the invention of claim 7, the dry gas is constituted only by the gas of the fluorine-based inert liquid, and the same effect as that of the invention of claim 1 can be obtained efficiently.

According to the invention of claim 8, the dry gas contains a gas of a fluorine-based inert liquid and a gas of a water-soluble solvent of 10% by volume or less, and has the same effect as the invention of claim 1. Obtainable.

According to the ninth aspect of the present invention, the fluorinated inert liquid is represented by the general formula (C _(n) F _{(2n +1)} -OR ₁ (where R ₁ is an alkyl group, and n is (Natural number), and the same effect as the first aspect of the invention can be obtained.

According to the tenth aspect, the fluorine-based inert liquid is ethyl perfluorobutyl ether, and the same effect as that of the first aspect can be obtained.

[Brief description of the drawings]

FIG. 1 is a diagram showing an overall configuration of a substrate drying apparatus according to the present invention.

FIG. 2 is a plan view of a drying tank of the substrate drying apparatus of FIG.

FIG. 3 is a side view of a drying tank of the substrate drying apparatus of FIG.

FIG. 4 is a diagram illustrating a state of a drying process in the substrate drying apparatus of FIG. 1;

FIG. 5 is a diagram illustrating a state of a drying process in the substrate drying apparatus of FIG. 1;

FIG. 6 is a diagram illustrating a state of a drying process in the substrate drying apparatus of FIG. 1;

FIG. 7 is a diagram illustrating a state of a drying process in the substrate drying apparatus of FIG. 1;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Drying tank 20 Cleaning tank 30 Dry gas supply nozzle 31 Dry gas generation part 37 Heater 50 Nitrogen gas supply nozzle LH lifter W Substrate

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3B201 AA03 AB08 AB42 BB04 BB93 CC12 3L113 AA01 AB02 AB09 AC01 AC28 AC67 BA34 DA24 5F043 BB27 DD12 DD30 EE07 EE12 EE35 EE36 EE40 GG10

Claims (10)

[Claims] 1. A substrate drying apparatus for drying a substrate that has been washed with pure water, wherein the drying gas supplies a dry gas containing a fluorine-based inert liquid gas to a main surface of the substrate to which the pure water has adhered. A substrate drying device comprising a supply unit. 2. A substrate drying apparatus for drying a substrate that has been washed with pure water, comprising: a cleaning tank for storing pure water and immersing the substrate in the pure water to wash the substrate; Lifting means for lifting the cleaned substrate from the cleaning tank, and dry gas supply means for supplying a dry gas containing a fluorine-based inert liquid gas to the main surface of the substrate being lifted by the lifting means. A substrate drying apparatus characterized by the above-mentioned. 3. The substrate drying apparatus according to claim 2, wherein the drying gas supply unit is provided on a side of the substrate that is being lifted from the cleaning tank by the lifting unit, and the fluorine-based gas is directed toward the substrate. A substrate drying apparatus for supplying a gas flow of a dry gas containing a gas of an active liquid. 4. The substrate drying apparatus according to claim 3, wherein the drying gas supply means forms a gas flow of the drying gas in a substantially horizontal direction on a gas-liquid interface of pure water in the cleaning tank. Substrate drying device. 5. The substrate drying apparatus according to claim 2, wherein the cleaning tank cleans a plurality of substrates stacked at a distance from each other, and A substrate drying apparatus, wherein the plurality of substrates are collectively lifted, and the drying gas supply means forms an air flow of the drying gas between each of the plurality of substrates being lifted by the lifting means. 6. The substrate drying apparatus according to claim 1, wherein the drying gas is heated to a temperature higher by at least 10 ° C. than a substrate to be dried and is sent to the drying gas supply means. A substrate drying apparatus, further comprising a drying gas heating means for performing drying. 7. The substrate drying apparatus according to claim 1, wherein the drying gas comprises only a fluorine-based inert liquid gas. 8. The substrate drying apparatus according to claim 1, wherein the drying gas includes a fluorine-based inert liquid gas and
A substrate drying apparatus comprising a gas of a water-soluble solvent of not more than volume%. In the substrate drying apparatus according to any one of claims 8 to 9. The method of claim 1, wherein the fluorine-based inert liquid has the general formula _{(C (n) F (2n} + 1) -O-R 1) (Where R ₁ is an alkyl group and n is a natural number). 10. The substrate drying apparatus according to claim 1, wherein the fluorine-based inert liquid is ethyl perfluorobutyl ether.