JP2001230498A5 - - Google Patents

Download PDF

Info

Publication number
JP2001230498A5
JP2001230498A5 JP2000038279A JP2000038279A JP2001230498A5 JP 2001230498 A5 JP2001230498 A5 JP 2001230498A5 JP 2000038279 A JP2000038279 A JP 2000038279A JP 2000038279 A JP2000038279 A JP 2000038279A JP 2001230498 A5 JP2001230498 A5 JP 2001230498A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000038279A
Other languages
Japanese (ja)
Other versions
JP2001230498A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000038279A priority Critical patent/JP2001230498A/ja
Priority claimed from JP2000038279A external-priority patent/JP2001230498A/ja
Publication of JP2001230498A publication Critical patent/JP2001230498A/ja
Publication of JP2001230498A5 publication Critical patent/JP2001230498A5/ja
Withdrawn legal-status Critical Current

Links

JP2000038279A 2000-02-16 2000-02-16 Iii族窒化物系化合物半導体レーザ Withdrawn JP2001230498A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000038279A JP2001230498A (ja) 2000-02-16 2000-02-16 Iii族窒化物系化合物半導体レーザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000038279A JP2001230498A (ja) 2000-02-16 2000-02-16 Iii族窒化物系化合物半導体レーザ

Publications (2)

Publication Number Publication Date
JP2001230498A JP2001230498A (ja) 2001-08-24
JP2001230498A5 true JP2001230498A5 (sh) 2006-11-30

Family

ID=18562041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000038279A Withdrawn JP2001230498A (ja) 2000-02-16 2000-02-16 Iii族窒化物系化合物半導体レーザ

Country Status (1)

Country Link
JP (1) JP2001230498A (sh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100395897C (zh) * 2003-08-08 2008-06-18 厦门三安电子有限公司 一种氮化物器件倒装的方法
US7843983B2 (en) 2004-03-18 2010-11-30 Sanyo Electric Co., Ltd. Semiconductor laser element and manufacturing method thereof
KR101131259B1 (ko) 2004-03-24 2012-03-30 스탄레 덴끼 가부시키가이샤 발광 장치의 제조방법 및 발광 장치
JP5060017B2 (ja) * 2004-08-12 2012-10-31 セイコーエプソン株式会社 プロジェクタ
KR100755279B1 (ko) 2005-10-11 2007-09-04 (주)더리즈 발광다이오드의 마운트 구조 및 그 제조방법
EP1906496B1 (de) * 2006-09-29 2010-01-06 OSRAM Opto Semiconductors GmbH Halbleiterlaser und Verfahren zur Herstellung eines solchen
JP2011165799A (ja) * 2010-02-08 2011-08-25 Showa Denko Kk フリップチップ型発光ダイオード及びその製造方法、並びに発光ダイオードランプ
KR101326179B1 (ko) * 2012-02-21 2013-11-07 주식회사 세미콘라이트 반도체 발광소자
JP7035377B2 (ja) * 2017-03-27 2022-03-15 ウシオ電機株式会社 半導体レーザ装置
CN107731979A (zh) * 2017-10-24 2018-02-23 江门市奥伦德光电有限公司 一种正装结构的led芯片及其制作方法
CN113471062A (zh) * 2021-06-30 2021-10-01 中国科学技术大学 Iii族氧化物薄膜制备方法及其外延片

Similar Documents

Publication Publication Date Title
BE2016C059I2 (sh)
BE2014C035I2 (sh)
BE2011C041I2 (sh)
BE2010C019I2 (sh)
BE2010C009I2 (sh)
JP2003507857A5 (sh)
BE2010C040I2 (sh)
JP2001038981A5 (sh)
BE2014C025I2 (sh)
JP2001328153A5 (sh)
JP2001185422A5 (sh)
JP2001202343A5 (sh)
JP2003519868A5 (sh)
JP2002165227A5 (sh)
JP2001230498A5 (sh)
JP2003511969A5 (sh)
JP2000296589A5 (sh)
JP2001268182A5 (sh)
JP2001291048A5 (sh)
JP2001216740A5 (sh)
JP2001231036A5 (sh)
BR0112866A2 (sh)
JP2001327093A5 (sh)
AU2000271150A8 (sh)
CN3144928S (sh)