JP2001230343A - High frequency integrated circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a small-size, low-cost and good-characteristics high frequency integrated circuit, without needing any special structure or complicated manufarting process. SOLUTION: A BCB thin film 103 is laminated on a silicon substrate 101, through-holes 110 are provided through the film 103 to form hollows 109 for blocking a sealant 108 from flowing between an MMIC 106 and the silicon substrate 101 during mounting of the MMIC 106, MMIC mounting pads are formed, using a topmost layer wiring, the MMIC with bumps formed on signal lectrodes, GND electrodes, bias electrodes, etc., is flip-chip-mounted, and after the flip chip mounting, the sealant is injected between the MMIC and BCB film and cured to tightly fix the MMIC and block the sealant from penetrating into through-hole portions.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency integrated circuit, and more particularly to a mounting structure of a millimeter-wave IC used in a radio device of a microwave or millimeter-wave band radio system.

[0002]

2. Description of the Related Art Conventionally, in a mounting structure of a millimeter wave IC,
JP-A-10-64956 discloses a structure for preventing injection of a sealing material.
And Japanese Patent Application Laid-Open No. 10-98134 are known. A structure described in Japanese Patent Application Laid-Open No. 9-260583 is known as a structure for reducing the influence of a mounting substrate.

FIGS. 12 to 14 show a conventional mounting structure.
In the structure shown in FIG.
1205 is flip-chip mounted on a dielectric substrate 1201, and the electrodes of the MMIC 1205 are
04 is connected to a wiring 1203 formed on a dielectric substrate 1201 via an insulating layer 1202.

At this time, the wiring pillar 1204 is connected to the MMIC.
1205 so as to surround the periphery of the sealed space 1208.
By forming the reinforcing material 1207
It prevents contact with the electric / electronic circuit 1206 below 1205.

In the structure shown in FIG. 13, Au bumps 130 are formed on element side pads 1302 of a dielectric substrate 1301.
3, the MMIC 1306 is mounted on the element side pad 1302. At this time, the dam 13
07 is provided. The dam 1307 prevents the reinforcing material 1308 from entering below the electric / electronic circuit 1304.

In the structure shown in FIG. 14, a bump 14 is formed on a mounting substrate 1401 having a space 1404 formed in a mounting area.
By mounting the MMIC chip 1403 by flip-chip using No. 02, the distance between the circuit surface of the MMIC 1403 and the mounting substrate 1401 is widened, thereby reducing the influence of the mounting substrate.

[0007]

In the conventional mounting structure,
A large number of wiring pillars and a large number of protrusions called dams are formed including regions other than the mounting portion (land) to prevent the dielectric material from entering below the IC. Many wiring pillars have problems such as an increase in manufacturing cost and generation of unnecessary coupling between pillars. In addition, the formation of a special projection has a problem such as an increase in cost due to a complicated manufacturing process. In addition, simply forming a gap in the substrate without using a sealing material is affected by heat, moisture, and impact, leaving a problem in terms of reliability.

The present invention has been made in view of the above circumstances, and has as its object to provide a small-sized, inexpensive, high-frequency integrated circuit having good characteristics without requiring a special structure or a complicated manufacturing process. .

[0009]

A high-frequency integrated circuit according to the present invention is provided with a dielectric substrate having a laminate including a pair of wiring layers sandwiching a dielectric thin film, and mounted on the wiring layer of the dielectric substrate. Semiconductor device, at least one cavity region formed below the semiconductor device, and a sealing member supplied between the stacked body and the semiconductor device,
The hollow region has a configuration in which the sealing member is formed at a position where the sealing member can be prevented from intruding below the semiconductor element.

The high-frequency integrated circuit according to the present invention, in the above configuration, employs a configuration in which the width of the cavity region is set smaller than the width of the semiconductor element.

According to these configurations, it is possible to suppress the radiation loss from the wiring layer on the semiconductor element. Thus, a small and inexpensive high-frequency integrated circuit can be realized without deteriorating the characteristics of the semiconductor element.

The high-frequency integrated circuit of the present invention has a configuration in the above configuration, wherein the width of the cavity region is selectively arranged below the active element region of the semiconductor element.

According to this structure, since the cavity region is selectively provided only below the active element portion of the semiconductor element, unnecessary parasitic capacitance between the active element electrodes is prevented from increasing, and
By increasing the portion where the sealing member is inserted, the mounting strength of the semiconductor element can be increased, and excellent characteristics can be exhibited.

In the high frequency integrated circuit of the present invention, the width of the cavity region is set to be smaller than the width of the semiconductor element, and the semiconductor element is mounted on a wiring layer on the dielectric substrate side in the laminate. It adopts the configuration that is performed.

According to this configuration, the thickness of the circuit can be reduced, and the gap into which the sealing member enters can be narrowed.
It is possible to more effectively prevent the sealing member from entering below the semiconductor element.

The high-frequency integrated circuit according to the present invention has the above-mentioned configuration, wherein the cavity region is formed only in the dielectric substrate.

According to this configuration, by forming the cavity region only in the dielectric substrate, the dielectric under the semiconductor element can be thinned while maintaining the strength due to the penetration of the sealing member. The influence can be reduced to form a high-frequency integrated circuit having excellent characteristics.

The high-frequency integrated circuit of the present invention has the above-mentioned structure, wherein the laminate has a multilayer structure having at least two dielectric thin films.

According to this configuration, radiation can be more effectively prevented. In particular, radiation can be more effectively prevented by laminating a dielectric film having a different dielectric constant from the substrate in the via hole below the semiconductor element.

A radio base station apparatus according to the present invention includes the high-frequency integrated circuit having the above configuration. Further, a wireless terminal device according to the present invention includes the high-frequency integrated circuit having the above configuration. Further, a wireless measurement device of the present invention is provided with the high-frequency integrated circuit having the above configuration. According to these configurations, it is possible to reduce the size and cost of the device.

Here, the cavity region may be formed by forming a through hole in the dielectric substrate or the dielectric thin film, or formed by forming a concave portion or a depression in the dielectric substrate or the dielectric thin film. You may.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION The gist of the present invention is to form a hollow region for preventing a sealing member from penetrating below a semiconductor device, and to provide a semiconductor device by capillary action of the sealing member caused by the presence of the hollow region. An object of the present invention is to prevent a sealing member, which is a dielectric material, from entering below a semiconductor element during mounting. This allows
A mounting structure of a semiconductor element with no characteristic deterioration can be realized, and a small and inexpensive and excellent high-frequency integrated circuit can be realized.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. (Embodiment 1) FIG. 1 is a sectional view showing a high-frequency integrated circuit according to Embodiment 1 of the present invention. In FIG. 1, 1
01 is a silicon substrate as a dielectric substrate, 103 is a BCB (benzocyclobutene) thin film as a dielectric thin film, 10
Reference numerals 2 and 104 denote first and second metal layers, which are used as wiring layers on the silicon substrate 101 and the BCB thin film 103, respectively. The first metal layer 102, the BCB thin film 103, and the second metal layer 104 constitute a laminate formed on the silicon substrate 101.

Reference numeral 105 denotes a first metal layer 1 on a silicon substrate.
02 and a second metal layer 104 on the BCB thin film 103 are provided as via holes. Reference numeral 106 denotes a microwave / millimeter wave integrated circuit (MMI) which is a semiconductor element mounted on a flip chip.
C) and 107 are bumps and 108 is a sealing material. A cavity region 109 is provided in the layered portion in the region inside the bump 107.
Are formed. The MMIC 10
When mounting 6, the sealing material 108 is prevented from flowing into this portion.

In the high frequency integrated circuit of the present invention, the thickness of each dielectric is, for example, about 250 μm to 1 mm for the silicon substrate 101 and about 5 μm to 3 mm for the BCB thin film 103.
It is 0 μm.

Conventionally, when an MMIC having a higher frequency than the microwave band or the millimeter wave band is used, if the MMIC and the mounting portion (bump) are sealed with a sealing material for fixing and moistureproof, the inside of the MMIC is reduced. The characteristics of the MMIC are degraded due to the change in the characteristics of the passive circuit and the increase of the parasitic component in the active element portion.

Further, when the MMIC is flip-chip mounted on a substrate having a high dielectric constant such as silicon or ceramic, the dielectric constant above the MMIC becomes larger than that in the face-up mounting. As a result, the electromagnetic field does not concentrate inside the MMIC, and the radiation from the routing wiring and the electrode of the active element increases. For example, in the amplifying MMIC, the performance is deteriorated such as a decrease in gain and a mismatch between input and output terminals.

Therefore, in the high frequency integrated circuit of this structure, the BCB thin film 103 is laminated on the silicon substrate 101 and the cavity region 109 is provided in the BCB thin film 103. And the silicon substrate 101. This cavity region 109 is made of BC
It can be provided by forming a through-hole in a laminate composed of the B thin film 103 and a metal layer sandwiching the B thin film 103.

In the high-frequency integrated circuit having this structure, a first metal layer 102 is formed as a wiring on the surface of a silicon substrate 101,
BCB is applied on the first metal layer 102 to form a BCB thin film 103. Further, a second metal layer 104 is formed as a wiring on the BCB thin film 103 to form a multilayer wiring structure. The multilayer wirings are electrically connected by forming via holes 105. Also, the MMIC 106
A cavity region 109 is formed below a portion where is mounted by forming a through hole.

The size and shape of the cavity region 109 are as follows.
Although it depends on the size of the MMIC 106, the internal wiring, and the arrangement of the active elements, it is sufficient that the portion through which the high-frequency signal passes is removed, and the sealing material 108 does not enter the hollow region 109 due to the capillary phenomenon due to the presence of the hollow region 109. Set to about. In the present embodiment, the MMIC 106
The inside of the electrode pad is entirely removed to form a hollow region.

The uppermost wiring (here, the second metal layer 10
4) An MMIC mounting pad is formed thereon, and an MMIC 106 having a bump 107 formed on a signal electrode, a GND electrode, a bias electrode, or the like is flip-chip mounted on the mounting pad. The bump 107 has a diameter of, for example, 80 μm,
It is formed with a height of 45 μm.

After the MMIC 106 is flip-chip mounted, the encapsulant 108 is attached to the MMIC 106 and the BCB thin film 103.
Then, the sealing material 108 is solidified to prevent the MMIC 106 from coming off. Normally, the sealing material 108 is formed of the MMIC 1 by utilizing the capillary phenomenon.
06 and the BCB thin film 103, but the cavity region 1
The sealing material 108 does not enter the portion 09 because the gap is widened, and most of the passive circuits and active element portions of the MMIC 106 do not come into contact with the sealing material 108. As a result, characteristic deterioration of the MMIC 106 can be suppressed, and a small and inexpensive high-frequency integrated circuit can be realized.

(Embodiment 2) FIG. 2 is a sectional view showing a high frequency integrated circuit according to Embodiment 2 of the present invention. FIG.
Is different from the first embodiment in that the mounting pad for the MMIC 106 is replaced with the second metal layer 1 which is the uppermost wiring layer.
04, instead of an inner layer, for example, a first metal layer 102 which is a wiring layer on a silicon substrate 101, and a bump 107
Is configured to fall into the hollow region 201.

An MMIC 106 is flip-chip mounted on a silicon substrate 101 on which a laminate including a BCB thin film 103 configured in the same manner as in the first embodiment is formed. After mounting, a sealing material 108 is injected for fixing the MMIC 106. At this time, unlike the case of the first embodiment, the MMIC
Since the gap between the thin film 106 and the BCB thin film 103 is relatively small, the amount of the sealing material 108 entering below the MMIC 106 can be reduced, and most of the passive circuits and the active element portions of the MMIC 106 do not contact the sealing material 108. You can do so. As a result, the characteristic deterioration of the MMIC 106 can be more effectively suppressed, and a small-sized and inexpensive high-frequency integrated circuit can be realized.

In this embodiment, the MMIC 106
3 is described as a hollow area, but as shown in FIG. 3, a hollow area 202a in which the bump 107 fits and an area 202b in which the sealing material 108 does not enter are separately provided. The structure to be formed can be similarly implemented.

(Embodiment 3) FIG. 4 is a sectional view showing a high-frequency integrated circuit according to Embodiment 3 of the present invention. FIG.
Is different from the first embodiment in that the BCB thin film 103
Region 30 communicating with silicon substrate 101 from below
1 is provided.

By adopting such a structure, it is possible not only to realize a structure in which the sealing material 108 under the MMIC 106 does not exist at the time of flip-chip mounting, but also to eliminate the influence of the silicon substrate 101 as a mounting substrate. The characteristic deterioration of the MMIC 106 can be suppressed,
A high-frequency integrated circuit can be realized in a small size and at low cost.

In this embodiment, the BCB thin film 10
Although the shapes of the three hollow regions and the hollow region of the silicon substrate 101 are the same, the hollow region of the silicon substrate 101 may be smaller than the hollow region of the BCB thin film 103 portion.

(Embodiment 4) FIG. 5 is a sectional view showing a high-frequency integrated circuit according to Embodiment 4 of the present invention. FIG.
Is different from the first embodiment in that the BCB thin film 103
The recess 40 is formed in the silicon substrate 101 below the partial cavity region.
1 is provided.

With such a structure, not only does the sealing material 108 not flow below the MMIC during flip-chip mounting, but also the influence of the silicon substrate 101 as a mounting substrate can be eliminated, so that the characteristics of the MMIC 106 deteriorate. , And a high-frequency integrated circuit that is small and inexpensive can be realized.

In this embodiment, the case where only the depression 401 is formed is described. However, a metal film is formed inside the depression 401 and shielded so as not to be affected by other circuits. May be adopted.

In the present embodiment, the BCB thin film 10
Although the three hollow regions have the same shape as the recess 401 of the silicon substrate 101, the recess 4 of the silicon substrate 101 has the same shape.
01 may be smaller than the cavity area of the BCB thin film 103 portion.

(Embodiment 5) FIG. 6 is a sectional view showing a high-frequency integrated circuit according to Embodiment 5 of the present invention. FIG.
Is different from the third embodiment in that the cavity region 501 is provided on the silicon substrate 101 from the BCB thin film 103,
This is a point that it is not formed on the B thin film 103.

By forming the cavity region 501 in the silicon substrate 101, it is possible to reduce the thickness of the dielectric below the MMIC 106 and to reduce the influence thereof. For example, when a BCB film (dielectric constant 2.69) having a thickness of 20 μm is used as a dielectric thin film and a sealing material (dielectric constant 3.5) is injected to have a thickness of 45 μm, a wiring (microstrip) on the MMIC 106 is formed. The effective permittivity of the line structure is 8.6, which is almost equal to 8.4 when the wiring of the MMIC is exposed to the air.

By adopting such a structure, the effective dielectric constant of the MMIC does not largely change during flip-chip mounting, and characteristic deterioration can be suppressed. Therefore, a small-sized and inexpensive high-frequency integrated circuit can be realized.

(Embodiment 6) FIG. 7 is a sectional view showing a high frequency integrated circuit according to Embodiment 6 of the present invention. FIG.
The difference from the first embodiment lies in that the hollow region 601 is formed not partially but entirely below the MMIC 106.

In the first embodiment, the hollow region is formed on the entire lower surface of the MMIC 106. However, when the hollow region cannot be formed on the entire surface due to the size of the MMIC, circuit protection or fixing on the MMIC, or the like. The sealing material 108 can also be formed by partially forming the cavity region 601.
It is possible to reduce the characteristic deterioration of the MMIC 106 due to the above.

In the case of the low-noise amplification MMIC as an example, when a cavity region is formed only in the matching circuit portion inside the MMIC, the gain is deteriorated but the change in the frequency characteristic can be suppressed to a small value. When the cavity region is formed only in the input-side matching circuit portion of the MMIC, the gain is deteriorated, but the low noise property is maintained. Further, when the cavity region is formed only in the output-side matching circuit portion of the MMIC, the change in gain is suppressed to a small degree, although the low noise property is deteriorated. Note that the metal layer portion corresponding to the cavity region 601 is removed to form a metal pattern removal portion 602.

As described above, by selectively forming the cavity region 601 in a part below the MMIC 106, the MMIC 1
In addition to preventing an increase in unnecessary parasitic capacitance, which is a cause of the characteristic deterioration of No. 06, the strength is increased by increasing the portion where the sealing material 108 is inserted, and a high-frequency integrated circuit having excellent characteristics can be configured. Thus, a high-frequency integrated circuit having excellent characteristics can be realized in a small size and at low cost.

In this embodiment, the BCB thin film 10
3, a case is described in which a cavity region is formed by forming a cavity region together with the sealing material 108 portion. However, as shown in FIG. 701 may be formed, and as shown in FIG. 9, a structure in which the silicon substrate 101, the stacked body, and the sealing material 108 are continuously provided with a cavity region may be employed. FIG.
In the figure, reference numeral 702 denotes a metal pattern removing unit.

(Embodiment 7) FIG. 10 is a sectional view showing a high-frequency integrated circuit according to Embodiment 7 of the present invention. 10 is different from the first embodiment in that the dielectric thin film has a multi-layer structure, and some layers (here, first metal layer 10
Second, a cavity region 901 is formed in the BCB thin film 103 and the second metal layer 104).

In order to reduce the influence of the dielectric below the MMIC 106 when the MMIC 106 is flip-chip mounted, it is desirable that the cavity region 901 be as deep as possible. Is almost negligible. However, it is difficult to reduce the thickness of the silicon substrate to about 1 mm or more from the viewpoint of reducing the thickness of the circuit and connecting the circuits formed on the upper and lower surfaces of the silicon substrate. Also, if the height of the bump is increased, the parasitic component increases.
μm or less is desirable.

In this embodiment, the second dielectric thin film 902 is provided separately from the BCB thin film 103 forming the cavity region 901.
Is provided between the first metal layer 102 and the silicon substrate 101 to form a multilayer structure. By laminating the second dielectric thin film 902 having a different dielectric constant from the silicon substrate 101 in the cavity 901 as described above, the electric field radiated from the circuit on the MMIC 106 is prevented from spreading to the silicon substrate 101. As the second dielectric thin film 902, for example, a BCB thin film (dielectric constant 2.69) having a thickness of several μm may be used.

As described above, by stacking the dielectric thin film 902 having a different dielectric constant from the silicon substrate 101 in the cavity region 901, it is possible to suppress the characteristic deterioration of the MMIC even during flip-chip mounting, so that it is small and inexpensive. A high frequency integrated circuit can be realized.

(Eighth Embodiment) FIG. 11 is a block diagram showing a schematic configuration of a wireless terminal device provided with a high-frequency integrated circuit according to the first to seventh embodiments of the present invention. The configuration and operation will be described with reference to FIG.

At the time of signal reception, the signal received by the antenna 1001 passes through the duplexer 1002,
03, and unnecessary frequency components are removed by the band-pass filter 1004a. This signal is supplied to the mixer 10
05a, the signal of the local oscillator 1009 is filtered by the band-pass filter 1004b,
(Intermediate frequency) signal. The received signal converted into an IF signal is converted into a demodulated signal by a modulation / demodulation unit 1006, and communication data is processed by a baseband unit 1007.

On the other hand, when transmitting, the baseband unit 1007
The communication data generated by
The signal is converted into an F signal, and is converted into a transmission signal by mixer 1005b using the signal of local oscillator 1009. The transmission signal includes unnecessary frequency components in bandpass filters 1004c, 1004c,
004d and the transmission amplifier 1008
a, amplified to a desired size in 1008b,
002 and transmitted from the antenna 1001.

In this configuration, the low noise amplifier 1003,
MM used for mixer 1005 and transmission amplifier 1008
The high frequency integrated circuit described in Embodiment Modes 1 to 7 is used for an active circuit unit such as an IC or a transistor.

Since the radio terminal device of this embodiment uses a high-frequency integrated circuit having an IC mounting structure suitable for miniaturization and cost reduction, the radio terminal device has an advantageous effect of realizing a radio system at a small size and low cost. can get.

Although the present embodiment describes a wireless terminal device provided with the high-frequency integrated circuit of the present invention, a wireless base station device provided with the high-frequency integrated circuit of the present invention,
It goes without saying that the same effect can be obtained even when used in a wireless measurement device.

The present invention is not limited to the above-described first to eighth embodiments and can be implemented with various modifications. For example, the materials and dimensions of the layers and films in the first to eighth embodiments are not limited, and can be changed as appropriate. Specifically, in the first to eighth embodiments, the case where a silicon substrate is used as a substrate having a high dielectric constant is described. However, in the present invention, as a dielectric substrate, for example, a ceramic substrate, a ceramic multilayer substrate , A GaAs substrate or the like can be used. In addition, the first embodiment
8 describes the case where a benzocyclobutene thin film is used as the dielectric thin film, but in the present invention, as the dielectric thin film, another dielectric thin film, for example, a polyimide thin film,
The present invention can be similarly implemented using a silicon dioxide thin film.

Further, in the first to eighth embodiments, the case where the first metal layer 102 and the second metal layer 104 are used as the wiring layers has been described. A microstrip line structure using the second metal layer 104 as a strip conductor can be similarly implemented. In addition, a coplanar line structure using the second metal layer 104 as a ground conductor and a strip conductor, or a coplanar with a ground conductor using the first metal layer 102 as a ground conductor and using the second metal layer 104 as a ground conductor and a strip conductor The present invention can be similarly implemented as a line structure.

In the first to eighth embodiments, the viscosity of the sealing material 108 is not described, but the injection amount can be adjusted by using a sealing material having a high viscosity.

[0064]

As described above, according to the present invention, when a microwave integrated circuit is flip-chip mounted on a dielectric substrate on which a dielectric thin film is laminated, a sealing material does not enter under the microwave integrated circuit. By providing the cavity region in the dielectric thin film as described above, it is possible to prevent the characteristics of the microwave integrated circuit from deteriorating even when it is mounted. Therefore, a small-sized and inexpensive high-frequency integrated circuit can be realized.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a high-frequency integrated circuit according to a first embodiment of the present invention;

FIG. 2 is a sectional view showing a high-frequency integrated circuit according to a second embodiment of the present invention;

FIG. 3 is a sectional view showing a high-frequency integrated circuit according to a second embodiment of the present invention;

FIG. 4 is a sectional view showing a high-frequency integrated circuit according to a third embodiment of the present invention;

FIG. 5 is a sectional view showing a high-frequency integrated circuit according to a fourth embodiment of the present invention;

FIG. 6 is a sectional view showing a high-frequency integrated circuit according to a fifth embodiment of the present invention;

FIG. 7 is a sectional view showing a high-frequency integrated circuit according to a sixth embodiment of the present invention;

FIG. 8 is a sectional view showing a high-frequency integrated circuit according to a sixth embodiment of the present invention;

FIG. 9 is a sectional view showing a high-frequency integrated circuit according to a sixth embodiment of the present invention;

FIG. 10 is a sectional view showing a high-frequency integrated circuit according to a seventh embodiment of the present invention;

FIG. 11 is a block diagram showing a schematic configuration of a wireless terminal device provided with the high-frequency integrated circuit of the present invention.

FIG. 12 is a sectional view showing a conventional high-frequency integrated circuit.

FIG. 13 is a sectional view showing a conventional high-frequency integrated circuit.

FIG. 14 is a sectional view showing a conventional high-frequency integrated circuit.

[Explanation of symbols]

Reference Signs List 101 silicon substrate 102 first metal layer 103 BCB thin film 104 second metal layer 105 via hole 106 MMIC 107 bump 108 sealing material 109, 201, 601, 701, 901 cavity region 110, 202, 301, 501, 601 801 Through hole 401 Depression 602, 702 Metal pattern removal unit 902 Second dielectric thin film 1001 Antenna 1002 Duplexer 1003 Low noise amplifier 1004 Band pass filter 1005 Mixer 1006 Modulation / demodulation unit 1007 Baseband unit 1008 Transmission amplifier

Claims (9)

[Claims] 1. A dielectric substrate having a laminate including a pair of wiring layers sandwiching a dielectric thin film, a semiconductor element mounted on the wiring layer of the dielectric substrate, and formed below the semiconductor element. At least one cavity region, a sealing member supplied between the stacked body and the semiconductor element,
Wherein the cavity region is formed at a position where the sealing member can prevent the semiconductor element from intruding below the semiconductor element. 2. The high-frequency integrated circuit according to claim 1, wherein a width of said cavity region is set smaller than a width of said semiconductor element. 3. The high-frequency integrated circuit according to claim 1, wherein a width of said cavity region is selectively arranged below an active device region of said semiconductor device. 4. The semiconductor device according to claim 1, wherein a width of the cavity region is set smaller than a width of the semiconductor element, and the semiconductor element is mounted on a wiring layer on the dielectric substrate side in the stacked body. A high-frequency integrated circuit according to claim 1. 5. The high-frequency integrated circuit according to claim 1, wherein said cavity region is formed only in said dielectric substrate. 6. The laminate according to claim 1, wherein the laminate has a multilayer structure having at least two dielectric thin films.
A high-frequency integrated circuit according to any one of claims 1 to 5. 7. A radio base station apparatus comprising the high-frequency integrated circuit according to claim 1. 8. A wireless terminal device comprising the high-frequency integrated circuit according to claim 1. 9. A wireless measurement device comprising the high-frequency integrated circuit according to claim 1.