JP2001223385A - Ｉｉｉ族窒化物系化合物半導体素子 - Google Patents

Ｉｉｉ族窒化物系化合物半導体素子

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Publication number
JP2001223385A
JP2001223385A JP2000034423A JP2000034423A JP2001223385A JP 2001223385 A JP2001223385 A JP 2001223385A JP 2000034423 A JP2000034423 A JP 2000034423A JP 2000034423 A JP2000034423 A JP 2000034423A JP 2001223385 A JP2001223385 A JP 2001223385A
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JP
Japan
Prior art keywords
layer
compound semiconductor
iii nitride
group iii
nitride compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000034423A
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English (en)
Japanese (ja)
Other versions
JP2001223385A5 (enExample
Inventor
Tetsuya Taki
瀧　　哲也
Makoto Asai
誠 浅井
Katsuhisa Sawazaki
勝久 沢崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2000034423A priority Critical patent/JP2001223385A/ja
Publication of JP2001223385A publication Critical patent/JP2001223385A/ja
Publication of JP2001223385A5 publication Critical patent/JP2001223385A5/ja
Withdrawn legal-status Critical Current

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JP2000034423A 2000-02-14 2000-02-14 Ｉｉｉ族窒化物系化合物半導体素子 Withdrawn JP2001223385A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000034423A JP2001223385A (ja) 2000-02-14 2000-02-14 Ｉｉｉ族窒化物系化合物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000034423A JP2001223385A (ja) 2000-02-14 2000-02-14 Ｉｉｉ族窒化物系化合物半導体素子

Publications (2)

Publication Number Publication Date
JP2001223385A true JP2001223385A (ja) 2001-08-17
JP2001223385A5 JP2001223385A5 (enExample) 2008-07-03

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ID=18558773

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JP2000034423A Withdrawn JP2001223385A (ja) 2000-02-14 2000-02-14 Ｉｉｉ族窒化物系化合物半導体素子

Country Status (1)

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JP (1) JP2001223385A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015083868A1 (ko) * 2013-12-02 2015-06-11 단국대학교 산학협력단 이종 접합 구조를 가지는 발광 다이오드 및 이의 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015083868A1 (ko) * 2013-12-02 2015-06-11 단국대학교 산학협력단 이종 접합 구조를 가지는 발광 다이오드 및 이의 제조방법

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